Results and Discussion

A. Part 2.1: Determine the common emitter current gain, β

Results of Part 2.1

a) What are the measured resistance values of RB and RC .

Parameter Measured
RB 2.67 kΩ
RC 1.0 MΩ
(1 mark)

b) What are the measured values of VBE and VRC .

Parameter Measured value

VBE 0.75 V
VRC 5.70 V
(1 mark)

c) Calculate IB and IC. You are required to show all the workings to obtain full marks.

IB = (20 – 0.75) / (1 x 106) IC = 5.70 / (2.67 x 103)

= 19.25 / (1 x 106) = 2.135 mA
= 1.925 x 10-5 A

(6 marks)
d) Calculate β. You are required to show all the workings to obtain full marks.
β = IC / IB
= (2.135 x 10-3) / (1.925 x 10-5)
= 110.909
≈ 111
(2 marks)
e) Record the β value obtained and compared the value with others group (at least two
others group)

Current gain, β Calculated value

My group 110.909

Group 1 166.4

Group 2 211.45

(1 mark)
[Total: 11 marks]
B. Discussions of Part 2.1 and additional questions

f) Suggest two possible reasons on why the current gain, β you obtained in section (e) is
different from the other 2 groups.
The current gain, β, is depends on the temperature. Besides, every group has different values
of resistances which results in difference in the value of collector and base currents. A small
change in base current will produce a large change in collector current.
(2 marks)
g) Is it desirable to have a larger or smaller current gain, β? Briefly explain your answer.
Larger current gain. This provides a good current amplification which means it can raise better
the strength of a weak signal.
(2 marks)
[Total: 4 marks]
C. Part 2.2: Determine the DC operating point, Q-point of a BJT

Results of Part 2.2

a. What are the measured resistance of R1, R2, RC and RE?
Parameter Measured value
R1 32.4 kΩ

R2 9.75 kΩ
RC 2.92 kΩ
RE 0.987 kΩ

(6 marks)
b. What are the measured values of VR1, VR2, VRC and VRE ?
Parameter Measured value
VR1 7.80 V
VR2 2.25 V
VRC 4.80 V
VRE 1.63 V

c. Determine the calculated values of VB, VC, VE, VBE and VCE.

VB = 2.25 V VE = 1.63 V VCE = 5.2 – 1.63

= 3.57 V
VC = 10 – 4.8 VBE = 2.25 – 1.63
= 5.2 V = 0.62 V
(7 marks)

d. Determine the calculated values of IE and IC.

IE = 1.63 / 0.987k IC = 4.8 / 2.92k
= 1.651 mA = 1.644 mA

(2 marks)
e. Using β and VBE obtained in Part 2.1 and measured resistors in Step a of Part 2.2,
calculate the theoretical values of VB, VC, VE, VCE, IE and IC. You are required to show
all the workings to obtain full marks.

RTh = 1 / [(1 / 324.k) + (1 / 9.75k)] VTh = 9.75k x 10 / (9.75k + 32.4k)

= 7.495 kΩ = 2.3132 V

VTh - IBRTh = VBE + VE

2.3132 – 7.495kIB = 0.75 + 0.987kIE
2.3132 – 7.495kIB = 0.75 + 0.987k (111.909) IB
IB [(111.909) (0.987k) + 7.495k] = 1.5632
IB = 1.5632 / [(111.909) (0.987k) + 7.495k]
= 13.253 x 10-6 A

VB = 2.3132 - 13.253 x 10-6 x 7.495k

= 2.2139 V

IC = 110.909 x 13.253 x 10-6 VC = 10 – 1.47m x 2.92k

= 1.47 mA = 5.7076 V

IE = 1.47 / (110.909/111.909) VE = 1.483m x 0.987k

= 1.483 mA = 1.4637 V

VCE = 5.7076 – 1.4637

= 4.2439 V

(10 marks)
D. Discussions of Part 2.2 and additional questions (Completed by: TEE WEE KIAN)

f. Calculate the percentage difference between the experimental values and theoretical
values for VCE and IC. Explain a possible reason why these differences arise.

VCE : (|3.57 – 4.2439| / 4.2439) x 100 % = 15.88 %

IC : (1.644 m – 1.47 m) / 1.47 m x 100 % = 11.84 %

The differences are due to the variation in current gain. Collector current much depends on
the current gain which is depends on the temperature. Moreover, the transistor might be
damaged by the high voltage applied during the experiment.

(4 marks)

g. The β of BJT varies with temperature. Due to the change of operating temperature,
the β of the BJT circuit in part (d) change from 100 to 200 in a step of 50. Assuming
VBE is 0.7 V, calculate IC for each value of β. Tabulate your results in Table 1. You
are required to show all the workings to obtain full marks.

From results from Part 2.2e, RTh = 7.495 kΩ and VTh = 2.3132 V
β = 100:
IC = (2.3132 – 0.7) / (101 x 0.987k + 7.495k) x 100
= 1.505 mA

β = 150:
IC = (2.3132 – 0.7) / (151 x 0.987k + 7.495k) x 150
= 1.546 mA

β = 150:
IC = (2.3132 – 0.7) / (200 x 0.987k + 7.495k) x 200
= 1.567 mA
 Table 1
Current gain, β Calculated IC
100 1.505 mA

150 1.546 mA
200 1.567 mA

(4 marks)

h. The RE = 1 kΩ of the BJT circuit is removed. Repeat your calculation in section (g).
Tabulate your results in Table 2. You are required to show all the workings to
obtain full marks.
From results from Part 2.2e, RTh = 7.495 kΩ and VTh = 2.3132 V

β = 100:
IC = (2.3132 – 0.7) / 7.495k x 100
= 21.524 mA

β = 150:
IC = (2.3132 – 0.7) / 7.495k x 150
= 32.286 mA

β = 150:
IC = (2.3132 – 0.7) / 7.495k x 200
= 43.047 mA

Table 2
Current gain, β Calculated IC

100 21.524 mA

150 32.286 mA

200 43.047 mA
i. From above, explain a possible reason why we include RE into the BJT circuit?
Without RE, collector current at bias point is affected by current gain. With RE, collector
current at bias point is less affected by common-emitter current gain, thus, more stable
against the variation of common-emitter current gain. Therefore, RE is vital bias stability.

(2 marks)

[Total: 14 marks]
E. Part 2.3: Determine the small signal voltage gain, Av = Vout/Vsig

Results of Part 2.3

a. Sketch the input waveform (Vsig) and the output waveform (Vout) together. Label
your waveform clearly in order to obtain full marks.

(6 marks)

b. Calculate the small signal voltage gain using Vsig and Vout. You are required to show
all the workings to obtain full marks.
Vpp(sig) = 20 mV
Vpp(out) = 1750 mV

Small voltage gain, Av = Vout / Vin

= -1750 mV / 20 mV
= -87.5

(2 marks)
c. Calculate the theoretical values of small signal voltage gain. You are required to
show all the workings to obtain full marks.
ICQ = 1.47 mA

gm = ICQ / VT
= 1.47 mA / 0.026 V
= 0.057

gmrπ = β
rπ = β / gm
= 110.0 / 0.057
= 1945.61

V = IR
V0 = ICQ R
ICQ = gmrπ

V0 = -gmVπ x 2920 Ω
= -0.057 x Vπ x 2920 Ω
= -166.44 Vπ
Vi = Vπ
V0 = -166.44 Vi

Av = V0 / Vi
= -166.44

Vpp = 166.44 x 10 m
= 1.66 V

Theoretical value of small signal voltage gain is -166.44.

(10 marks)
[Total: 18 marks]
F. Discussions of Part 2.3 and additional questions (Completed by: LING XIN WEI)

d. What causes the difference of the small signal voltage gain you obtained
experimentally compared to the theoretical value?
The tolerance in each resistor. The tolerance in the resistors are ±5% which will cause
different value of resistance when the current flows.

(2 marks)

e. Describe your observations of the output waveform (Vout).

The amplitude of the output waveform is very high compared to input waveform. This
shows that the voltage had been amplified. However, the output waveform is the inverse
of input waveform with different amplitude. It is observed that in the same point of time,
the peak of input voltage is positive, while the peak of output voltage is negative.
(2 marks)

f. Using the small signal voltage gain that you have obtained experimentally, sketch the
input waveform and output waveform for the following conditions:
i. Input signal – sinusoid signal with frequency 2 kHz and peak-to-peak voltage of
15 mV.
 ii. Input signal - sinusoid signal with frequency 1 kHz and peak voltage of 25 mV.

Label your graph clearly to obtain full marks.

(8 marks)

g. Why is the role of CE capacitor (refer to Figure 6 of the lab sheet) in the BJT circuit?
The role of CE capacitor is to increase the voltage gain in the amplifier. This is because
the resistor, RE connected in the circuit had reduced the voltage gain. Therefore, with the
present of CE capacitor, it will solve the problem of low voltage gain.

(2 marks)

[Total: 14 marks]
G. Conclusion
In less than 200 words, write a conclusion. This should address the following:
i. What was accomplished/learnt through the practical session?
ii. Summarize your results
iii. Explain the discrepancies between the theoretical and experimental results

During the experiment, a common emitter amplifier is constructed by using

bipolar junction transistor. In part 2.1, the common emitter gain, β is determined.
By applying KVL, IB and IC is calculated. In part 2.2, Q-point of the transistor is
determined. This value is further used in the part 2.3 to calculate the theoretical
value of small voltage gain. With the value of β and VBE calculated in part 2.1,
the theoretical values of VB, VC, VE, VCE, IE, and IC can be calculated. In part 2.3,
a signal function generator and an oscilloscope are connected to the same circuit
in part 2.2. Then, the small voltage gain is calculated with the value of Vsig and
Vout illustrated on the oscilloscope. The waveform of the output voltage is the
inverse of input voltage. The output voltage shows higher amplitude compared to
the input voltage. The voltage gain is amplified. The difference between the
theoretical and experimental value is due to the temperature in the room and the
tolerance of the resistor. The room temperature will affect the voltage gain of the
transistor. While the tolerance of the resistors causes the resistance in the circuit
unstable.

(7 marks)
[Total: 7 marks]