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Lab P12 - Sheet Resistance Measurement

This document summarizes procedures for (1) measuring sheet resistance of aluminum and piezoresistors using a four-point probe setup, (2) optionally separating dies using a dicing saw mounted on a sacrificial wafer, and (3) optionally wire bonding and packaging separated dies onto a ceramic dip package. Sheet resistance is calculated from measured voltage and current values. Piezoresistor doping and implantation parameters are also provided.

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Anh Luu
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64 views2 pages

Lab P12 - Sheet Resistance Measurement

This document summarizes procedures for (1) measuring sheet resistance of aluminum and piezoresistors using a four-point probe setup, (2) optionally separating dies using a dicing saw mounted on a sacrificial wafer, and (3) optionally wire bonding and packaging separated dies onto a ceramic dip package. Sheet resistance is calculated from measured voltage and current values. Piezoresistor doping and implantation parameters are also provided.

Uploaded by

Anh Luu
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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UNIVERSITY OF CINCINNATI

EECE 5141/6041: Microfabrication Lab for Semiconductor Devices and MEMS

Lab P12: Sheet Resistance Measurement & Packaging

Procedures
1. Al sheet resistance measurement
R = (ρ × l) / A = (ρ × l) / (w × t) = (ρ / t) × (l / w) = Rs × (l / w)
R = V / I → Rs = (V / I) / (l / w)
For bulk Al, ρ = 2.82 × 10-8 Ω·m
t = 0.5 μm, Rs = ρ / t = 5.64×10-2 Ω/□

Current (mA) Voltage (mV) V/I average V/I


1.0
2.0
3.0
4.0
5.0

2. PZR sheet resistance measurement


Four-point measurement set up is shown above.
The same four-point measurement set up for piezoresistor.
Calculate the theoretical PZR sheet resistance and compare
Si wafer Nd = 4.7×1014 ~ 5.5×1015/cm3
Energy : 50 keV, Dose : 8×1014 #/cm2, Species : Boron, Offset (tilt) : 7 degrees
Projected range = 1,566 Å, Lateral straggle = 432 Å

Current (mA) Voltage (V) V/I Average V/I


0.2
0.3
0.4
0.5
0.6
0.7

3. Die separation (optional)


(a) The wafer is diced using Micro Automation 602M dicing saw
(b) The wafer was wax mounted to a 4” (500 µm thick) dummy wafer which is used as a
sacrificial substrate

4. Wire bonding and package (optional)


The diced sensor chip is glued with epoxy to the base of a ceramic dip package, and then wire
bonded using the Mech-El 907 Ultrasonic wedge bonder

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