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TRANSISTORS, LOW POWER, NPN

BASED ON TYPE 2ST15300

ESCC Detail Specification No. 5201/020

Issue 3 August 2021

Document Custodian: European Space Agency – see https://escies.org

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No. 5201/020 ISSUE 3

LEGAL DISCLAIMER AND COPYRIGHT

European Space Agency, Copyright © 2021. All rights reserved.

The European Space Agency disclaims any liability or responsibility, to any person or entity, with
respect to any loss or damage caused, or alleged to be caused, directly or indirectly by the use and
application of this ESCC publication.

This publication, without the prior permission of the European Space Agency and provided that it is
not used for a commercial purpose, may be:

− copied in whole, in any medium, without alteration or modification.

− copied in part, in any medium, provided that the ESCC document identification, comprising the
ESCC symbol, document number and document issue, is removed.
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DOCUMENTATION CHANGE NOTICE

(Refer to https://escies.org for ESCC DCR content)

DCR No. CHANGE DESCRIPTION

1434 Specification updated to incorporate changes per DCR.

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TABLE OF CONTENTS
1 GENERAL 5
1.1 SCOPE 5
1.2 APPLICABLE DOCUMENTS 5
1.3 TERMS, DEFINITIONS, ABBREVIATIONS, SYMBOLS AND UNITS 5
1.4 THE ESCC COMPONENT NUMBER AND COMPONENT TYPE VARIANTS 5
1.4.1 The ESCC Component Number 5
1.4.2 Component Type Variants 5
1.5 MAXIMUM RATINGS 6
1.6 PHYSICAL DIMENSIONS AND TERMINAL IDENTIFICATION 7
1.6.1 Surface Mount Package (SMD.5) - 3 terminal 7
1.7 FUNCTIONAL DIAGRAM 7
1.8 MATERIALS AND FINISHES 8
2 REQUIREMENTS 8
2.1 GENERAL 8
2.1.1 Deviations from the Generic Specification 8
2.2 MARKING 8
2.3 TERMINAL STRENGTH 8
2.4 ELECTRICAL MEASUREMENTS AT ROOM, HIGH AND LOW TEMPERATURES 9
2.4.1 Room Temperature Electrical Measurements 9
2.4.2 High and Low Temperatures Electrical Measurements 10
2.5 PARAMETER DRIFT VALUES 11
2.6 INTERMEDIATE AND END-POINT ELECTRICAL MEASUREMENTS 11
2.7 HIGH TEMPERATURE REVERSE BIAS BURN-IN CONDITIONS 11
2.8 POWER BURN-IN CONDITIONS 12
2.9 OPERATING LIFE CONDITIONS 12
APPENDIX A 14
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1 GENERAL

1.1 SCOPE
This specification details the ratings, physical and electrical characteristics and test and inspection
data for the component type variants and/or the range of components specified below. It supplements
the requirements of, and shall be read in conjunction with, the ESCC Generic Specification listed
under Applicable Documents.

1.2 APPLICABLE DOCUMENTS

The following documents form part of this specification and shall be read in conjunction with it:
(a) ESCC Generic Specification No. 5000
(b) MIL-STD-750, Test Methods and Procedures for Semiconductor Devices
(c) MIL-STD-883, Test Methods and Procedures for Micro-electronics.

1.3 TERMS, DEFINITIONS, ABBREVIATIONS, SYMBOLS AND UNITS

For the purpose of this specification, the terms, definitions, abbreviations, symbols and units specified
in ESCC Basic Specification No. 21300 shall apply.

1.4 THE ESCC COMPONENT NUMBER AND COMPONENT TYPE VARIANTS

1.4.1 The ESCC Component Number

The ESCC Component Number shall be constituted as follows:
Example: 520102001

• Detail Specification Reference: 5201020

• Component Type Variant Number: 01 (as required)
• Total Dose Radiation Level Letter: R (as required)

1.4.2 Component Type Variants

The component type variants applicable to this specification are as follows:

Variant Based on Type Case Terminal Weight Total Dose Radiation

Number Material and max g Level Letter
Finish
01 2ST15300 SMD.5 Q14 2 R [100krad(Si)]
02 2ST15300 SMD.5 Q4 2 R [100krad(Si)]

The terminal material and finish shall be in accordance with the requirements of ESCC Basic
Specification No. 23500.

Total dose radiation level letters are defined in ESCC Basic Specification No. 22900. If an alternative
radiation test level is specified in the Purchase Order, the letter shall be changed accordingly.
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1.5 MAXIMUM RATINGS

The maximum ratings shall not be exceeded at any time during use or storage.

Maximum ratings shall only be exceeded during testing to the extent specified in this specification
and when stipulated in Test Methods and Procedures of the ESCC Generic Specification.

Characteristics Symbols Maximum Ratings Units Remarks

Collector-Base Voltage VCBO 300 V Over entire
Collector-Emitter Voltage VCEO 100 V operating
temperature
Emitter-Base Voltage VEBO 6 V
range
Collector Current IC 5 A Continuous
Power Dissipation Ptot1 2.2 W At Tamb ≤ +25°C
Note 1
Ptot2 40 At Tcase ≤ +25°C
Note 1
Thermal Resistance, Rth(j-a) 80 °C/W
Junction-to-Ambient
Thermal Resistance, Rth(j-c) 4.38 °C/W
Junction-to-Case
Junction Temperature Tj +200 °C
Operating Temperature Range Top -65 to +200 °C
Storage Temperature Range Tstg -65 to +200 °C
Soldering Temperature Tsol +245 °C Note 2

NOTES:
1. For Tamb or Tcase > +25ºC, derate linearly to 0W at +200ºC.
2. Duration 5 seconds maximum and the same terminal shall not be resoldered until 3 minutes
have elapsed.
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1.6 PHYSICAL DIMENSIONS AND TERMINAL IDENTIFICATION

1.6.1 Surface Mount Package (SMD.5) - 3 terminal

Symbols Dimensions mm Remarks

Min Max
A 2.84 3.15
A1 0.25 0.51
b 7.13 7.39
b1 5.58 5.84
b2 2.28 2.54 2 places
b3 2.92 3.18 2 places
D 10.03 10.28
D1 0.76 - 2 places
E 7.39 7.64
e 1.91 BSC 2 places

NOTES:
1. Terminal identification is specified by the components geometry where Terminal 1 = base,
Terminal 2 = emitter and Terminal 3 = collector.

1.7 FUNCTIONAL DIAGRAM

1. Base
2. Emitter
3. Collector

NOTES:
1. The lid is not connected to any terminal.
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1.8 MATERIALS AND FINISHES

Materials and finishes shall be as follows:
(a) Case
The case shall be hermetically sealed and have a ceramic body with a Kovar lid.
(b) Terminals
As specified in Para. 1.4.2 Component Type Variants.

2 REQUIREMENTS

2.1 GENERAL
The complete requirements for procurement of the components specified herein are as stated in this
specification and the ESCC Generic Specification. Permitted deviations from the Generic
Specification, applicable to this specification only, are listed below.

Permitted deviations from the Generic Specification and this Detail Specification, formally agreed
with specific Manufacturers on the basis that the alternative requirements are equivalent to the ESCC
requirement and do not affect the component’s reliability, are listed in the appendices attached to
this specification.

2.1.1 Deviations from the Generic Specification

None.

2.2 MARKING
The marking shall be in accordance with the requirements of ESCC Basic Specification No. 21700
and as follows.

The information to be marked on the component or its primary package shall be:
(a) The ESCC qualified components symbol (for ESCC qualified components only).
(b) The ESCC Component Number (see Para. 1.4.1).
(c) Traceability information.

2.3 TERMINAL STRENGTH

The test conditions for terminal strength, tested as specified in the ESCC Generic Specification, shall
be in accordance with MIL-STD-883, Test Method 2004, Test Condition D.
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2.4 ELECTRICAL MEASUREMENTS AT ROOM, HIGH AND LOW TEMPERATURES

Electrical measurements shall be performed at room, high and low temperatures.

2.4.1 Room Temperature Electrical Measurements

The measurements shall be performed at Tamb = +22 ±3°C.

Characteristics Symbols MIL-STD-750 Test Conditions Limits Units

Test Method Min Max
Collector-Emitter V(BR)CEO 3011 IC = 10mA 100 - V
Breakdown Bias condition D
Voltage Note 1
Collector-Base V(BR)CBO 3001 IC = 10mA 300 - V
Breakdown Bias condition D
Voltage
Emitter-Base V(BR)EBO 3026 IE = 10µA 6 - V
Breakdown Bias condition D
Voltage
Collector-Base ICBO 3036 VCE = 300V - 10 µA
Cut-off Current Bias condition D
Emitter-Base IEBO 3061 VEB = 6V - 50 µA
Cut-off Current Bias condition D
Forward-Current hFE1 3076 VCE = 0.6V; IC = 50mA 50 - -
Transfer Ratio hFE2 VCE = 0.6V; IC = 250mA 55 - -
hFE3 VCE = 5V; IC = 1A 55 - -
hFE4 VCE = 5V; IC = 5A 35 - -
Collector-Emitter VCE(sat) 3071 IC = 5A, IB = 1A - 0.7 V
Saturation Voltage Note 1
Base-Emitter VBE(sat) 3066 IC = 5A, IB = 1A - 1.4 V
Saturation Voltage Test condition A
Note 1
Output Cobo 3236 VCB = 10V, IE = 0A - 120 pF
Capacitance f = 1MHz
Note 2
Turn-on Time ton - VCC = 30V, VBB = -8V - 0.4 µs
Ic = 3A
Turn-off Time toff - IB1 = IB2 = 300mA - 3.5 µs
Notes 2, 3

NOTES:
1. Pulse measurement: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
2. For AC characteristics, read and record measurements shall be performed on a sample of
32 components with 0 failures allowed. Alternatively a 100% inspection may be performed.
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3. ton and toff shall be measured as follows:

2.4.2 High and Low Temperatures Electrical Measurements

Characteristics Symbols MIL-STD-750 Test Conditions Limits Units
Test Method Note 1 Min Max
Collector-Base ICBO 3036 Tamb = +150 (+0 -5)°C - 100 µA
Cut-off Current VCB = 300V
Bias condition D

NOTES:
1. Read and record measurements shall be performed on a sample of 5 components with
0 failures allowed. Alternatively a 100% inspection may be performed.
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2.5 PARAMETER DRIFT VALUES

Unless otherwise specified, the measurements shall be performed at Tamb = +22 ±3°C.

The test methods and test conditions shall be as per the corresponding test defined in Para. 2.4.1
Room Temperature Electrical Measurements.

The drift values (Δ) shall not be exceeded for each characteristic specified. The corresponding
absolute limit values for each characteristic shall not be exceeded.

Characteristics Symbols Limits Units

Drift Absolute
Value
Min Max
Δ
Collector-Base Cut-off Current ICBO ±100 - 10 µA
or (1)
±100%
Collector-Emitter Saturation Voltage VCE(sat) ±30mV - 0.7 V
or (1)
±15%
Forward-Current Transfer Ratio 2 hFE2 ±15% 55 - -

NOTES:
1. Whichever is the greater referred to initial value.

2.6 INTERMEDIATE AND END-POINT ELECTRICAL MEASUREMENTS

Unless otherwise specified, the measurements shall be performed at Tamb = +22 ±3°C.

The test methods and test conditions shall be as per the corresponding test defined in Para. 2.4.1
Room Temperature Electrical Measurements.

The limit values for each characteristic shall not be exceeded.

Characteristics Symbols Limits Units

Min Max
Collector-Base Cut-off Current ICBO - 10 µA
Collector-Emitter Saturation Voltage VCE(sat) - 0.7 V
Forward-Current Transfer Ratio 2 hFE2 55 - -

2.7 HIGH TEMPERATURE REVERSE BIAS BURN-IN CONDITIONS

Characteristics Symbols Test Conditions Units
Ambient Temperature Tamb +150 (+0 -5) °C
Collector-Base Voltage VCB 100 V
Duration t 48 minimum Hours
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2.8 POWER BURN-IN CONDITIONS

Characteristics Symbols Test Conditions Units
Ambient Temperature Tamb +20 to +50 °C
Power Dissipation Ptot As per Para. 1.5 Maximum Ratings. W
Derate Ptot1 at the chosen Tamb using
the specified Rth(j-a).
Collector-Base Voltage VCB 20 to 50 V

2.9 OPERATING LIFE CONDITIONS

The conditions shall be as specified in Para. 2.8 Power Burn-in Conditions.

2.10 TOTAL DOSE RADIATION TESTING

All lots shall be irradiated in accordance with ESCC Basic Specification No. 22900, low dose rate
(window 2: 36 to 360 rad(Si)/hour).

2.10.1 Bias Conditions and Total Dose Level for Total dose Radiation Testing
The following bias conditions shall be used for Total Dose Radiation Testing:

Characteristics Symbols Test Conditions Units

Ambient Temperature Tamb +20 ±5 °C
Bias Condition 1: VCES ≥ 80% V(BR)CEO V
Collector-Emitter Voltage
Bias Condition 2: VCES 0 V
Collector-Emitter Voltage

The total dose level applied shall be as specified in Para. 1.4.2 or in the Purchase Order.
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2.10.2 Electrical Measurements for Radiation Testing

Prior to irradiation testing, the devices shall have successfully met Para. 2.4.1 Room Temperature
Electrical Measurements.

Unless otherwise stated, the measurements shall be performed at Tamb = +22 ±3°C.

Unless otherwise specified, the test methods and test conditions shall be as per the corresponding
test defined in Para. 2.4.1 Room Temperature Electrical Measurements.

The parameters to be measured during and on completion of irradiation testing are shown below.

Characteristics Symbols MIL-STD-750 Test Conditions Limits Units

Test Method Min Max
Collector-Emitter Breakdown V(BR)CEO See Para. 2.4.1 See Para. 2.4.1 100 - V
Voltage
Collector-Base Breakdown V(BR)CBO See Para. 2.4.1 See Para. 2.4.1 240 - V
Voltage
Emitter-Base Breakdown Voltage V(BR)EBO See Para. 2.4.1 See Para. 2.4.1 6 - V
Collector-Base Cut-off Current ICBO See Para. 2.4.1 See Para. 2.4.1 - 10 µA
Emitter-Base Cut-off Current IEBO See Para. 2.4.1 See Para. 2.4.1 - 50 µA
Forward-Current [hFE1] 3076 VCE = 0.6V; IC = 50mA [25] - -
Transfer Ratio [hFE2] VCE = 0.6V; IC = 250mA [27.5] - -
(post irradiation gain calculation)
(Note 1) [hFE3] VCE = 5V; IC = 1A [27.5] - -
[hFE4] VCE = 5V; IC = 5A [17.5] - -
Collector-Emitter Saturation VCE(sat) See Para. 2.4.1 See Para. 2.4.1 - 0.7 V
Voltage
Base-Emitter Saturation Voltage VBE(sat) See Para. 2.4.1 See Para. 2.4.1 - 1.4 V

NOTES:
1. The post-irradiation gain calculation of [hFE], made using hFE measurements from prior to and
on completion of irradiation testing and after each annealing step if any, shall be as specified
in MIL-STD-750 Method 1019.
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APPENDIX A
AGREED DEVIATIONS FOR STMICROELECTRONICS (F)

ITEMS AFFECTED DESCRIPTION OF DEVIATIONS

Para. 2.1.1, Deviations from For qualification and qualification maintenance, or procurement of qualified
the Generic Specification: or unqualified components, the following replacement test method
Para. 8, Test Methods and specifications shall be used instead of the following ESCC Basic
Procedures Specifications:
• No. 20400, Internal Visual Inspection: replaced by MIL-STD-750 Test
Method 2072.
• No. 20500, External Visual Inspection: replaced by MIL-STD-750 Test
Method 2071.
• No. 20900, Radiographic Inspection of Electronic Components: replaced
by MIL-STD-750 Test Method 2076.
Para. 2.1.1, Deviations from Solderability is not applicable unless specifically stipulated in the Purchase
the Generic Specification: Order.
Deviations from Screening
Tests - Chart F3
Para. 2.4.1, Room All AC characteristics (see Para. 2.4.1 Note 2) may be considered
Temperature Electrical guaranteed but not tested if successful pilot lot testing has been performed
Measurements on the wafer lot which includes AC characteristic measurements per the
Detail Specification.
A summary of the pilot lot testing shall be provided if required by the
Purchase Order.
Para. 2.4.2, High and Low All characteristics specified may be considered guaranteed but not tested if
Temperatures Electrical successful pilot lot testing has been performed on the wafer lot which
Measurements includes characteristic measurements at high and low temperatures per the
Detail Specification.
A summary of the pilot lot testing shall be provided if required by the
Purchase Order.