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    Datasheet 2SC4115E

    Uploaded by

    Felipe Costa
    This document provides information on the NPN Epitaxial planar Silicon Transistor 2SC4115E from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. It has low collector-emitter saturation voltage (VCE(sat)) of 0.2V typical. It is well suited for use in portable equipment like mobile phones, MP3 players, and laptop computers. The transistor has a DC current gain (hFE) between 120-560, a transition frequency (fT) of 290MHz minimum, and can handle continuous collector currents up to 3A.

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    Datasheet 2SC4115E

    Uploaded by

    Felipe Costa
    7 views3 pages
    This document provides information on the NPN Epitaxial planar Silicon Transistor 2SC4115E from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. It has low collector-emitter saturation voltage (VCE(sat)) of 0.2V typical. It is well suited for use in portable equipment like mobile phones, MP3 players, and laptop computers. The transistor has a DC current gain (hFE) between 120-560, a transition frequency (fT) of 290MHz minimum, and can handle continuous collector currents up to 3A.

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    datasheet 2SC4115E

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    This document provides information on the NPN Epitaxial planar Silicon Transistor 2SC4115E from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. It has low collector-emitter saturation voltage (VCE(sat)) of 0.2V typical. It is well suited for use in portable equipment like mobile phones, MP3 players, and laptop computers. The transistor has a DC current gain (hFE) between 120-560, a transition frequency (fT) of 290MHz minimum, and can handle continuous collector currents up to 3A.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    7 views3 pages

    Datasheet 2SC4115E

    Uploaded by

    Felipe Costa
    This document provides information on the NPN Epitaxial planar Silicon Transistor 2SC4115E from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. It has low collector-emitter saturation voltage (VCE(sat)) of 0.2V typical. It is well suited for use in portable equipment like mobile phones, MP3 players, and laptop computers. The transistor has a DC current gain (hFE) between 120-560, a transition frequency (fT) of 290MHz minimum, and can handle continuous collector currents up to 3A.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 3

    JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.

    , LTD

    WBFBP-03A Plastic-Encapsulate Transistors


    C
    2SC4115E TRANSISTOR
    WBFBP-03A
    DESCRIPTION (1.6×1.6×0.5) TOP
    unit: mm
    NPN Epitaxial planar Silicon Transistor
    B E
    FEATURES 1. BASE C
    Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC/IB = 2A/0.1A) 2. EMITTER

    3. COLLECTOR BACK
    APPLICATION
    Excellent current gain characteristics E B
    For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
    DVD-ROM, Note book PC, etc.)

    MARKING:CFQ, CFR, CFS


    C

    CFQ

    B E
    MAXIMUM RATINGS TA=25℃ unless otherwise noted
    Symbol Parameter Value Units
    VCBO Collector-Base Voltage 40 V
    VCEO Collector-Emitter Voltage 20 V
    VEBO Emitter-Base Voltage 6 V
    IC Collector Current -Continuous 3 A
    PD Total Device Dissipation 150 mW
    TJ Junction Temperature 150 ℃
    Tstg Storage Temperature -55-150 ℃

    ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

    Parameter Symbol Test conditions MIN TYP MAX UNIT


    Collector-base breakdown voltage V(BR)CBO IC= 50µA , IE=0 40 V
    Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 20 V
    Emitter-base breakdown voltage V(BR)EBO IE=50µA, IC=0 6 V
    Collector cut-off current ICBO VCB=30V , IE=0 0.1 µA
    Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 µA
    DC current gain hFE VCE=2 V, IC= 0.1A 120 560
    Collector-emitter saturation voltage* VCEsat IC= 2A, IB=0.1A 0.5 V
    VCE=2V, IC=0.5 A
    Transition frequency fT f=100MHz
    290 MHz
    Collector output capacitance Cobo VCB=10V,IE=0,f=1MHz 25 pF
    CLASSIFICATION OF hFE
    Rank Q R S
    Range 120-270 180-390 270-560
    Typical Characteristics 2SC4115E
    D im e n s io n s In M illim e t e r s D im e n s io n s In In c h e s
    Sym bol
    M in . M ax. M in . M ax.
    A 0 .4 5 0 0 .5 5 0 0 .0 1 8 0 .0 2 2
    A1 0 .0 1 0 0 .0 9 0 0 .0 0 0 0 .0 0 4
    b 0 .2 3 0 0 .3 3 0 0 .0 0 9 0 .0 1 3
    b1 0 .3 2 0 R E F . 0 .0 1 3 R E F .
    D 1 .5 5 0 1 .6 5 0 0 .0 6 1 0 .0 6 5
    E 1 .5 5 0 1 .6 5 0 0 .0 6 1 0 .0 6 5
    D2 0 .7 5 0 R E F . 0 .0 3 0 R E F .
    E2 1 .0 0 0 R E F . 0 .0 4 0 R E F .
    e 1 .0 0 0 T Y P . 0 .0 4 0 T Y P .
    L 0 .2 8 0 R E F . 0 .0 1 1 R E F .
    L1 0 .2 3 0 R E F . 0 .0 0 9 R E F .
    L2 0 .1 8 0 R E F . 0 .0 0 7 R E F .
    L3 0 .2 5 0 R E F . 0 .0 1 0 R E F .
    L4 0 .2 0 0 R E F . 0 .0 0 8 R E F .
    k 0 .3 2 0 R E F . 0 .0 1 3 R E F .
    z 0 .1 6 0 R E F . 0 .0 0 6 R E F .

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