414 FIELD-EFFECT There are also enhancement-type MESFETs with a construction the same as in Fig. 6.

47
TRANSISTORS but without the initial channel, as shown in Fig. 6.50 along with its graphic symbol. The re-
sponse and characteristics are essentially the same as for the enhancement-type MOSFET.
However, due to the Schottky barrier at the gate, the positive threshold voltage is limited
to 0 V to about 0.4 V because the “turn-on” voltage for a Schottky barrier diode is about
0.7 V. Again, the analysis techniques applied to enhancement-type MESFETs are similar
to those employed for enhancement-type MOSFETs.

Heavily doped
n-type region

D
n+ D

G GaAs G
Substrate
Metal
S
n+ S

(a) (b)

FIG. 6.50
Enhancement-type MESFET: (a) construction; (b) symbol.

It is important to realize, however, that the channel must be an n-type material in a MESFET.
The mobility of holes in GaAs is relatively low compared to that of the negatively charged car-
riers, losing the advantage of using GaAs for high-speed applications. The result is:
Depletion-type and enhancement-type MESFETs are made with an n-channel between
the drain and the source, and therefore only n-type MESFETs are commercially available.
For both types of MESFETs the channel length (identified in Figs. 6.47 and 6.50) should
be made as short as possible for high-speed applications. The length is typically between
0.1 mm and 1 mm.

6.13 SUMMARY TABLE

●
Since the transfer curves and some important characteristics vary from one type of FET to
another, Table 6.3 was developed to clearly display the differences from one device to the
next. A clear understanding of all the curves and parameters of the table will provide a suf-
ficient background for the dc and ac analyses to follow. Take a moment to ensure that each
curve is recognizable and its derivation understood, and then establish a basis for compari-
son of the levels of the important parameters of Ri and Ci for each device.

6.14 SUMMARY
●
Important Conclusions and Concepts
1. A current-controlled device is one in which a current defines the operating condi-
tions of the device, whereas a voltage-controlled device is one in which a particular
voltage defines the operating conditions.
2. The JFET can actually be used as a voltage-controlled resistor because of a unique
sensitivity of the drain-to-source impedance to the gate-to-source voltage.
3. The maximum current for any JFET is labeled IDSS and occurs when VGS 0 V.
4. The minimum current for a JFET occurs at pinch-off defined by VGS = VP.
5. The relationship between the drain current and the gate-to-source voltage of a JFET is
a nonlinear one defined by Shockley’s equation. As the current level approaches
IDSS, the sensitivity of ID to changes in VGS increases significantly.
 TABLE 6.3
Field Effect Transistors

Symbol and Input Resistance

Type Basic Relationships Transfer Curve and Capacitance
JFET
(n-channel)

Ri 7 100 M
Ci: (1 - 10) pF

MOSFET
depletion type
(n-channel)

Ri 7 1010
Ci: (1 - 10) pF

MOSFET
enhancement type
(n-channel)

Ri 7 1010
Ci: (1 - 10) pF

MESFET
depletion type
(n-channel)

Ri 7 1012
Ci: (1 - 5) pF

MESFET
enhancement type
(n-channel)

Ri 7 1012
Ci: (1 - 5) pF
416 FIELD-EFFECT 6. The transfer characteristics (ID versus VGS) are characteristics of the device itself and
TRANSISTORS are not sensitive to the network in which the JFET is employed.
7. When VGS = VP>2, ID = IDSS >4; and at a point where ID = IDSS >2, VGS 0.3 V.
8. Maximum operating conditions are determined by the product of the drain-to-source
voltage and the drain current.
9. MOSFETs are available in one of two types: depletion and enhancement.
10. The depletion-type MOSFET has the same transfer characteristics as a JFET for drain
currents up to the IDSS level. At this point the characteristics of a depletion-type MOSFET
continue to levels above IDSS, whereas those of the JFET will end.
11. The arrow in the symbol of n-channel JFETs or MOSFETs will always point in to the
center of the symbol, whereas those of a p-channel device will always point out of
the center of the symbol.
12. The transfer characteristics of an enhancement-type MOSFET are not defined by
Shockley’s equation but rather by a nonlinear equation controlled by the gate-to-source
voltage, the threshold voltage, and a constant k defined by the device employed. The
resulting plot of ID versus VGS rises exponentially with incrseasing values of VGS.
13. Always handle MOSFETs with additional care due to the static electricity that exists
in places we might least suspect. Do not remove any shorting mechanism between the
leads of the device until it is installed.
14. A CMOS (complementary MOSFET) device employs a unique combination of a p-
channel and an n-channel MOSFET with a single set of external leads. It has the
advantages of a very high input impedance, fast switching speeds, and low operating
power levels, all of which make it very useful in logic circuits.
15. A depletion-type MESFET includes a metal–semiconductor junction, resulting in char-
acteristics that match those of an n-channel depletion-type JFET. Enhancement-
type MESFETs have the same characteristics as enhancement-type MOSFETs. The
result of this similarity is that the same type of dc and ac analysis techniques can be
applied to MESFETs as was applied to JFETs.

Equations
JFET:
VGS 2
ID = IDSS a 1 - b
VP
IDSS
ID = IDSS 0 VGS = 0 V, ID = 0 mA 0 VGS = VP, ID = ` , VGS 0.3VP 0 ID = IDSS>2
4 VGS = VP>2
ID
VGS = VP a1 - b
A IDSS
PD = VDSID
ro
rd =
(1 - VGS >VP)2
MOSFET (enhancement):
ID = k(VGS - VT)2
ID(on)
k =
(VGS(on) - VT)2

6.15 COMPUTER ANALYSIS

●
PSpice Windows
The characteristics of an n-channel JFET can be displayed using the same procedure
employed for the transistor in Section 3.13. The series of curves across the characteristics
plotted against various values of voltage requires a nested sweep within the sweep for the
drain-to-source voltage. The required configuration of Fig. 6.51 is constructed using pro-
cedures described in the previous chapters. In particular, note the complete absence of
resistors since the input impedance is assumed to be infinite, resulting in a gate current of 0 A.