< Silicon RF Power MOS FET (Discrete) >

RD07MUS2B
RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W

OUTLINE DRAWING
DESCRIPTION
RD07MUS2B of RoHS-compliant product
is a MOS FET type transistor specifically
designed for VHF/UHF/870MHz RF power
amplifiers applications.

FEATURES
High power gain and High Efficiency.
Typical Po Gp ηD
(175MHz) 7.2W 13.8dB 65%
(527MHz) 8W 13.0dB 63%
(870MHz) 7W 11.5dB 58%
Integrated gate protection diode.

APPLICATION
For output stage of high power amplifiers in
VHF/UHF/800MHz-band mobile radio sets.

RoHS COMPLIANT
RD07MUS2B is a RoHS compliant product.

ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED)

SYMBOL PARAMETER CONDITIONS RATINGS UNIT
VDSS Drain to source voltage Vgs=0V 25 V
VGSS Gate to source voltage Vds=0V -5/+10 V
Pch Channel dissipation Tc=25°C 50 W
Pin Input Power Zg=Zl=50 0.8* W
ID Drain Current - 3 A
Tch Junction Temperature - 150 °C

Tstg Storage temperature - -40 to +125 °C

Rth j-c Thermal resistance Junction to case 2.5 °C/W

Note: Above parameters are guaranteed independently.

*: 175MHz spec. is 0.6W

Publication Date : Jun．2019

1
< Silicon RF Power MOS FET (Discrete) >

RD07MUS2B
RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W

ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED)

LIMITS UNIT
SYMBOL PARAMETER CONDITIONS
MIN TYP MAX.
IDSS Drain cutoff current VDS=17V, VGS=0V - - 10 uA
IGSS Gate cutoff current VGS=5V, VDS=0V - - 1 uA
VTH Gate threshold Voltage VDS=7.2V, IDS=1mA 0.5 1 1.5 V
Pout1 Output power f=175MHz,VDD=7.2V - 7.2* - W
D1 Drain efficiency Pin=0.3W,Idq=250mA - 65* - %
Pout2 Output power f=527MHz ,VDD=7.2V 7** 8** - W
D2 Drain efficiency Pin=0.4W,Idq=250mA 58** 63** - %
Pout3 Output power f=870MHz ,VDD=7.2V - 7*** - W
D3 Drain efficiency Pin=0.5W,Idq=250mA - 58*** - %
VDD=9.5V,Po=7W(Pin Control)
VSWRT Load VSWR tolerance f=527MHz,Idq=250mA,Zg=50 No destroy -
Load VSWR=20:1(All Phase)
Note: Above parameters, ratings, limits and conditions are subject to change.

* At 135-175MHz broad matching ** At 450-527MHz broad matching *** At 763-870MHz broad matching

Publication Date : Jun．2019

2
< Silicon RF Power MOS FET (Discrete) >

RD07MUS2B
RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W

TYPICAL CHARACTERISTICS
(These are only typical curves and devices are not necessarily guaranteed at these curves.)

Vds-Ids CHARACTERISTICS VGS-IDS CHARACTERISTICS

3.5V 7
7 3V
Ta=+25℃
6 Vds=7.2V
6 Ta=+25℃
5
5

IDS (A),gm (S)

2.5V
4
4
Ids(A)

gm
3 3

IDS
2 2V 2

1 1
Vgs=1.5V
0 0
0 2 4 6 8 10 0 0.5 1 1.5 2 2.5 3
Vds(V) VGS (V)

Vds VS. Ciss CHARACTERISTICS Vds VS. Coss CHARACTERISTICS

160 120

140 Ta=+25℃ Ta=+25℃

100 f=1MHz
f=1MHz
120
80
100
Coss(pF)
Ciss(pF)

80 60

60
40
40
20
20

0 0
0 5 10 15 20 0 5 10 15 20
Vds(V) Vds(V)

Vds VS. Crss CHARACTERISTICS

20
18 Ta=+25℃
16 f=1MHz

14
12
Crss(pF)

10
8
6
4
2
0
0 5 10 15 20
Vds(V)

Publication Date : Jun．2019

3
< Silicon RF Power MOS FET (Discrete) >

RD07MUS2B
RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W

TYPICAL CHARACTERISTICS ( 135-175MHz )

(These are only typical curves and devices are not necessarily guaranteed at these curves.)
f-Po CHARACTERISTICS @f=135-175MHz f-Po CHARACTERISTICS @f=135-175MHz
50 100 10 100
Po
Po
40 80 8 80
Po(dBm) , Gp(dB) , Idd(A)

Pout(W) , Idd(A)
30 60 6 60
ηｄ Ta=+25°C ηd

ηd(%)

ηd(%)
Vdd=7.2V
Ta=+25°C
Pin=0.3W
20 Idq=250mA 40 4 Vdd=7.2V 40
Gp Pin=0.3W
Idq=250mA
Idd
10 20 2 20
Idd

0 0 0 0
135 140 145 150 155 160 165 170 175 135 140 145 150 155 160 165 170 175
f (MHz) f (MHz)

Pin-Po CHARACTERISTICS @f=175MHz Pin-Po CHARACTERISTICS @f=175MHz

50 100 10 100

Po
ηd
40 80 8 80
Po(dBm) , Gp(dB) , Idd(A)

Pout(W) , Idd(A)

ηｄ Po
30 60 6 60

ηd(%)
ηd(%)

Ta=+25℃
20 Gp 40 f=175MHz
4 40
Vdd=7.2V
Ta=+25℃ Idq=250mA
f=175MHz
10 20 2 Idd 20
Vdd=7.2V
Idq=250mA
Idd
0 0 0 0
0 5 10 15 20 25 30 0 0.2 0.4 0.6 0.8
Pin(dBm) Pin(W)

Vdd-Po CHARACTERISTICS @f=175MHz Vgg-Po CHARACTERISTICS @f=175MHz

25 5 10 5
Ta=+25℃
Ta=+25℃ f=175MHz
20 f=175MHz 4 8 Pin=0.3W Po 4
Pin=0.3W Icq=250mA
Icq=250mA Zg=ZI=50 ohm
Zg=ZI=50 ohm
15 3 6 3
Po
Idd(A)

Idd(A)
Po(W)

Po(W)

10 2 4 2

5 Idd 1 2 Idd 1

0 0 0 0
3 4 5 6 7 8 9 10 0 0.4 0.8 1.2 1.6 2
Vdd(V) Vgg(V)

Publication Date : Jun．2019

4
< Silicon RF Power MOS FET (Discrete) >

RD07MUS2B
RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W

TYPICAL CHARACTERISTICS ( 450-527MHz )

(These are only typical curves and devices are not necessarily guaranteed at these curves.)
f-Po CHARACTERISTICS @f=450-527MHz f-Po CHARACTERISTICS @f=450-527MHz
50 100 10 100

Po
Po
40 80 8 80
Po(dBm) , Gp(dB) , Idd(A)

Pout(W) , Idd(A)
30 60 6 60
Ta=+25°C ηd

ηd(%)
ηｄ

ηd(%)
Vdd=7.2V Ta=+25°C
Pin=0.4W Vdd=7.2V
20 40 4 Pin=0.4W 40
Idq=250mA
Gp Idq=250mA
Idd
10 20 2 20
Idd

0 0 0 0
450 460 470 480 490 500 510 520 530 450 460 470 480 490 500 510 520 530
f (MHz) f (MHz)

Pin-Po CHARACTERISTICS @f=527MHz Pin-Po CHARACTERISTICS @f=527MHz

50 100 10 100

Ta=+25℃ Po Po
40 f=527MHz 80 8 80
Vdd=7.2V
Po(dBm) , Gp(dB) , Idd(A)

Idq=250mA
Pout(W) , Idd(A)

30 60 6 ηd 60
ηｄ

ηd(%)
ηd(%)

Ta=+25℃
f=527MHz
20 40 4 Vdd=7.2V 40
Gp Idq=250mA
Idd
10 20 2 20
Idd

0 0 0 0
0 5 10 15 20 25 30 0.0 0.2 0.4 0.6 0.8
Pin(dBm) Pin(W)

Vdd-Po CHARACTERISTICS @f=527MHz Vgg-Po CHARACTERISTICS @f=527MHz

25 5 10 5
Po
Ta=+25℃
f=527MHz
20 4 8 4
Pin=0.4W
Icq=250mA Ta=+25℃
Zg=ZI=50 ohm f=527MHz
15 3 6 Pin=0.4W 3
Po Icq=250mA
Idd(A)

Idd(A)
Po(W)

Po(W)

Zg=ZI=50 ohm
10 2 4 2
Idd
Idd
5 1 2 1

0 0 0 0
3 4 5 6 7 8 9 10 0 0.4 0.8 1.2 1.6 2
Vdd(V) Vgg(V)

Publication Date : Jun．2019

5
< Silicon RF Power MOS FET (Discrete) >

RD07MUS2B
RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W

TYPICAL CHARACTERISTICS ( 763-870MHz )

(These are only typical curves and devices are not necessarily guaranteed at these curves.)
f-Po CHARACTERISTICS @f=763-870MHz f-Po CHARACTERISTICS @f=763-870MHz
50 100 10 100
Ta=+25°C
Po Vdd=7.2V
Po Pin=0.5W
40 80 8 80
Po(dBm) , Gp(dB) , Idd(A)

Idq=250mA

Pout(W) , Idd(A)
30 60 6 60

ηd(%)
ηd(%)
Ta=+25 ηd
Vdd=7.2V ηｄ
20 Pin=0.5W 40 4 40
Idq=250mA
Gp
Idd
10 20 2 20

Idd
0 0 0 0
760 780 800 820 840 860 880 900 920 940 960 760 780 800 820 840 860 880 900 920 940 960
f (MHz) f (MHz)

Pin-Po CHARACTERISTICS @f=870MHz Pin-Po CHARACTERISTICS @f=870MHz

50 100 10 100

Ta=+25℃
Po
40 f=870MHz 80 8 80
Vdd=7.2V Po
Po(dBm) , Gp(dB) , Idd(A)

Idq=250mA
Pout(W) , Idd(A)

30 60 6 60

ηd(%)
ηd(%)

ηｄ ηd Ta=+25℃
f=870MHz
20 40 4 Vdd=7.2V 40
Gp Idq=250mA
Idd
10 20 2 20
Idd

0 0 0 0
0 5 10 15 20 25 30 0.0 0.2 0.4 0.6 0.8
Pin(dBm) Pin(W)

Vdd-Po CHARACTERISTICS @f=870MHz Vgg-Po CHARACTERISTICS @f=870MHz

25 5 10 5
Ta=+25℃
Ta=+25℃
f=870MHz Po
20 f=870MHz 4 8 4
Pin=0.5W
Pin=0.5W
Icq=250mA
Icq=250mA
Zg=ZI=50 ohm
Zg=ZI=50 ohm
15 3 6 3
Idd(A)

Idd(A)
Po(W)

Po(W)

10 Idd 2 4 2

Idd
5 Po 1 2 1

0 0 0 0
3 4 5 6 7 8 9 10 0 0.4 0.8 1.2 1.6 2
Vdd(V) Vgg(V)

Publication Date : Jun．2019

6
< Silicon RF Power MOS FET (Discrete) >

RD07MUS2B
RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W

TEST CIRCUIT(f=135-175MHz)
Vgg Vdd
22μF,50V

C2
C1

21mm
21mm W
W

L1
4.7KΩ 4.7K ohm RD07MUS2B
(f=135-175MHz)
7.5mm 1mm 3mm L3 3mm 3.5mm 7.5mm L2 2.5mm 2.5mm RF-OUT
RF-in 3.5mm 1.5mm L5 5.5mm 3mm L4 4.5mm 5mm 9.5mm
62pF
22pF 22pF 100pF 20pF
100pF 2.2 ohm
140pF 43pF

Note:Board material Glass-Epoxy substrate L1,L2:Enameled wire 6 Turns,D:0.23mm,1.66mm O.D

Micro strip line width=1.3mm/50 ohm,er:4.8,t=0.8mm L3,L5:Enameled wire 2 Turns,D:0.23mm,1.66mm O.D
W:line width=1.0mm L4 :Enameled wire 4 Turns,D:0.43mm,1.66mm O.D
C1,C2:1000pF,0.0022μF in parallel

TEST CIRCUIT(f=450-527MHz)

Vgg Vdd
22μF,50V

C1 C2

21mm W
21mm
W

L1
4.7KΩ
4.7K ohm RD07MUS2B
(f=450-527MHz)
3mm 4.5mm 6mm 2.5mm 0.5mm L2 7.5mm 5.5mm RF-OUT
RF-in 4mm 10mm 4mm 5mm 5.5mm 1mm 1mm
100pF
24pF 24pF 9pF 8pF
100pF
12pF 8pF 8pF 12pF 54pF

Note:Board
Note:Board material
material Glass-Epoxysubstrate
Glass-Epoxy substrate L1:Enameled wire 5 Turns,D:0.43mm,2.46mm O.D
MicroMicro
stripstrip
lineline
width=1.3mm/50Ω,er:4.8,t=0.8mm
width=1.3mm/50 ohm,er:4.8,t=0.8mm L2:Enameled wire 2 Turns,D:0.23mm,1.66mm O.D
W:line width=1.0mm
W:line width=1.0mm C1,C2:1000pF,0.0022μF in parallel

Publication Date : Jun．2019

7
< Silicon RF Power MOS FET (Discrete) >

RD07MUS2B
RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W

TEST CIRCUIT(f=763-870MHz)

Vgg Vdd
22μF,50V

C1 C2

21mm W
W 21mm

4.7KΩ
4.7K ohm RD07MUS2B 10pF 8pF L1
(f=763-870MHz)
0.5mm 1mm 12mm 1mm 1mm 16.5mm RF-OUT
RF-in 19mm 9mm 2.5mm 1mm 1.5mm
150pF
10pF 8pF 6pF 1pF
150pF
1pF 6pF 12pF

Note:Board material
Note:Board materialGlass-Epoxy
Glass-Epoxysubstrate
substrate L1:Enameled wire 7 Turns,D:0.23mm,1.66mm O.D
Micro strip
Micro strip line
line width=1.3mm/50 ohm,er:4.8,t=0.8mm
width=1.3mm/50Ω,er:4.8,t=0.8mm C1,C2:1000pF,100pF in parallel
W:line width=1.0mm
W:line width=1.0mm

Input / Output Impedance VS. Frequency Characteristics

Method of Measurement

Termination Input Matching Network Output Matching Network Termination

of TEST CIRCUIT DUT of TEST CIRCUIT
50 (operation frequency) Network 50

Zin* Zout*

Zin*: Input Matching Network impedance measured from DUT

Zout*: Output Matching Network impedance measured from DUT

Z0: Characteristic impedance

Publication Date : Jun．2019

8
< Silicon RF Power MOS FET (Discrete) >

RD07MUS2B
RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W

Input / Output Impedance VS. Frequency Characteristics

f=175MHz
@Pin=0.3W, Vdd=7.2V,
Idq=250mA(Vgg adj.)

f=155MHz
f f Zout*
Zout*
(MHz)
(MHz) (Ω )
(ohm)
135135 3.50-j5.54
3.50-j5.54
f=135MHz
155155 2.57-j2.57
2.57-j2.57
175 2.06+j0.62
175 2.06+j0.62

Z0=10Ω
Zo=10ohm
Zout* ( f=135, 155, 175MHz)

Zout*: Complex conjugate of

output impedance

Zin* ( f=135, 155, 175MHz) @Pin=0.3W, Vdd=7.2V,

Idq=250mA(Vgg adj.)
Z0=10Ω
Zo=10ohm

ff Zin*
Zin*
f=175MHz (MHz) (Ω )
(MHz) (ohm)
135 5.58+j2.43
135 5.58+j2.43
f=155MHz 155
155 5.25+j5.60
5.25+j5.60
175
175 5.01+j8.65
5.01+j8.65

f=135MHz

Zin*: Complex conjugate of

input impedance

Input / Output Impedance VS. Frequency Characteristics

Publication Date : Jun．2019

9
< Silicon RF Power MOS FET (Discrete) >

RD07MUS2B
RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W

Zout* ( f=450, 490, 520, 527MHz)

@Pin=0.4W, Vdd=7.2V,
Idq=250mA(Vgg adj.)
Z0=10Ω
Zo=10ohm

ff Zout*
Zout*
(MHz)
(MHz) (Ω )
(ohm)
450
450 2.80+j1.07
2.80+j1.07
490
490 2.25+j0.75
2.25+j0.75
520
520 1.51+j1.04
1.51+j1.04
527
527 1.36+j1.20
1.36+j1.20
f=527MHz
f=450MHz
f=520MHz
f=485MHz
Zout*: Complex conjugate of
output impedance

@Pin=0.4W, Vdd=7.2V,
Zin* ( f=450, 490, 520, 527MHz) Idq=250mA(Vgg adj.)
Z0=10Ω
Zo=10ohm

ff Zin*
Zin*
(MHz)
(MHz) (Ω )
(ohm)
450
450 2.62+j2.02
2.62+j2.02
490
490 2.90+j3.07
2.90+j3.07
f=520MHz f=527MHz 520
520 3.29+j3.70
3.29+j3.70
f=490MHz 527
527 3.40+j3.81
3.40+j3.81
f=450MHz

Zin*: Complex conjugate of

input impedance

Publication Date : Jun．2019

10
< Silicon RF Power MOS FET (Discrete) >

RD07MUS2B
RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W

Input / Output Impedance VS. Frequency Characteristics

Zout* ( f=763, 806, 817, 870MHz) @Pin=0.5W, Vdd=7.2V,

Idq=250mA(Vgg adj.)
Z0=10Ω
Zo=10ohm

ff Zout*
Zout*
(MHz)
(MHz) (Ω )
(ohm)
763
763 2.01+j0.43
2.01+j0.43
806
806 2.16+j0.80
2.16+j0.80
817
817 2.17+j0.85
2.17+j0.85
870 2.17+j1.07
870 2.17+j1.07

f=870MHz
f=817MHz
f=806MHz
f=763MHz
Zout*: Complex conjugate of
output impedance

f=870MHz
@Pin=0.5W, Vdd=7.2V,
f=817MHz Idq=250mA(Vgg adj.)
f=806MHz

f=763MHz
f Zin*
f Zin*
(MHz)
(MHz) (Ω )
(ohm)
763
763 1.72-j1.54
1.72-j1.54
806
806 1.55-j0.50
1.55-j0.50
817
817 1.46-j0.23
1.46-j0.23
870
870 1.28+j0.95
1.28+j0.95

Z0=10Ω
Zo=10ohm
Zin* ( f=763, 806, 817, 870MHz)

Zin*: Complex conjugate of

input impedance

Publication Date : Jun．2019

11
< Silicon RF Power MOS FET (Discrete) >

RD07MUS2B
RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W

RD07MUS2B S-PARAMETER DATA (@Vdd=7.2V, Id=250mA)

Freq. S11 S21 S12 S22
[MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang)
100 0.838 -168.9 10.744 80.7 0.016 -7.6 0.752 -168.4
135 0.843 -170.7 7.837 74.8 0.015 -12.7 0.764 -169.6
150 0.845 -171.2 6.996 72.6 0.015 -14.5 0.769 -169.8
175 0.851 -171.8 5.894 68.9 0.015 -17.6 0.779 -170.0
200 0.857 -172.3 5.051 65.4 0.014 -20.4 0.790 -170.3
250 0.870 -173.1 3.857 59.2 0.014 -25.5 0.810 -170.6
300 0.882 -173.8 3.048 53.6 0.013 -29.7 0.829 -171.1
350 0.893 -174.5 2.472 48.5 0.012 -33.5 0.846 -171.6
400 0.903 -175.1 2.041 44.0 0.010 -36.3 0.861 -172.2
450 0.912 -175.7 1.709 40.1 0.009 -38.6 0.874 -172.8
500 0.919 -176.3 1.451 36.5 0.009 -40.2 0.886 -173.4
520 0.922 -176.6 1.363 35.3 0.008 -40.7 0.890 -173.5
527 0.923 -176.7 1.333 34.8 0.008 -40.8 0.891 -173.6
550 0.926 -177.0 1.244 33.4 0.008 -41.2 0.895 -173.9
600 0.931 -177.5 1.079 30.6 0.007 -41.8 0.904 -174.4
650 0.936 -178.2 0.944 28.1 0.006 -41.6 0.912 -174.9
700 0.940 -178.7 0.834 25.7 0.005 -40.8 0.920 -175.4
750 0.943 -179.3 0.741 23.6 0.005 -38.9 0.926 -175.9
763 0.944 -179.5 0.720 23.0 0.005 -38.3 0.927 -176.0
800 0.946 -179.9 0.662 21.5 0.004 -36.4 0.931 -176.4
806 0.946 -180.0 0.654 21.3 0.004 -35.8 0.932 -176.5
817 0.947 179.9 0.638 20.9 0.004 -35.2 0.933 -176.6
850 0.948 179.5 0.595 19.7 0.004 -32.4 0.935 -177.0
870 0.949 179.3 0.571 19.0 0.003 -30.3 0.937 -177.2
900 0.950 178.9 0.538 18.0 0.003 -26.7 0.939 -177.4
950 0.952 178.4 0.489 16.4 0.003 -19.4 0.942 -177.9
1000 0.953 177.9 0.446 14.9 0.002 -10.3 0.944 -178.2
1050 0.955 177.3 0.409 13.5 0.002 1.1 0.946 -178.6
1100 0.955 176.8 0.376 12.1 0.002 13.3 0.948 -178.9

ORDERING INFORMATION:

ORDER NUMBER SUPPLY FORM

RD07MUS2B-501 loose sample for evaluation
RD07MUS2B-T512 Tape & Reel(2,000pcs/reel)
RD07MUS2B-T514 Tape & Reel(4,000pcs/reel)

Publication Date : Jun．2019

12
< Silicon RF Power MOS FET (Discrete) >

RD07MUS2B
RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W

ATTENTION:
1.High Temperature ; This product might have a heat generation while operation,Please take notice that have
a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch
off. At the near the product,do not place the combustible material that have possibilities to arise the fire.
2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice
that do not leakage the unnecessary electric wave and use this products without cause damage for human and
property per normal operation.
3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and
electric wave obstacle for equipment.

PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES:

1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional details
regarding operation of these products from the formal specification sheet. For copies of the formal
specification sheets, please contact one of our sales offices.

2.RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed
for consumer mobile communication terminals and were not specifically designed for use in other applications.
In particular, while these products are highly reliable for their designed purpose, they are not manufactured
under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed
necessary for critical communications elements and In the application, which is base station applications and
fixed station applications that operate with long term continuous transmission and a higher on-off frequency
during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain
period and others as needed. For the reliability report which is described about predicted operating life time of
Mitsubishi Silicon RF Products , please contact Mitsubishi Electric Corporation or an authorized Mitsubishi
Semiconductor product distributor.

3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore
appropriate ESD precautions are required.

4. In the case of use in below than recommended frequency, there is possibility to occur that the device is
deteriorated or destroyed due to the RF-swing exceed the breakdown voltage.

5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is
recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan,
etc.) to keep the channel temperature for RD series products lower than 120deg/C(in case of
Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions.

6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the
exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to
extreme short current flow between the drain and the source of the device. These results causes in fire or
injury.

7. For specific precautions regarding assembly of these products into the equipment, please refer to the
supplementary items in the specification sheet.

8. Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in
any way from it’s original form.

9. For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page
of this data sheet.

Publication Date : Jun．2019

13
< Silicon RF Power MOS FET (Discrete) >

RD07MUS2B
RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W

10. Please avoid use in the place where water or organic solvents can adhere directly to the product and the
environments with the possibility of caustic gas, dust, salinity, etc. Reliability could be markedly decreased
and also there is a possibility failures could result causing a serious accident. Likewise, there is a possibility
of causing a serious accident if used in an explosive gas environment. Please allow for adequate safety
margin in your designs.

11. Please refer to the additional precautions in the formal specification sheet.

Keep safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead
to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of
non-flammable material or (iii) prevention against any malfunction or mishap.

Notes regarding these materials

•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under any
intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.
•Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s
rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application
examples contained in these materials.
•All information contained in these materials, including product data, diagrams, charts, programs and algorithms
represents information on products at the time of publication of these materials, and are subject to change by
Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore
recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor
product distributor for the latest product information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric
Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or
errors.
Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including
the Mitsubishi Semiconductor home page (http://www.MitsubishiElectric.com/).
•When using any or all of the information contained in these materials, including product data, diagrams, charts,
programs, and algorithms, please be sure to evaluate all information as a total system before making a final
decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes no
responsibility for any damage, liability or other loss resulting from the information contained herein.
•Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system
that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric
Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product
contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical,
aerospace, nuclear, or undersea repeater use.
•The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part
these materials.
•If these products or technologies are subject to the Japanese export control restrictions, they must be exported
under a license from the Japanese government and cannot be imported into a country other than the approved
destination.
Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of
destination is prohibited.
•Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for
further details on these materials or the products contained therein.

© 2016 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.

Publication Date : Jun．2019

14