IRF9640S, SiHF9640S, IRF9640L, SiHF9640L

www.vishay.com
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY • Surface mount
VDS (V) -200 • Available in tape and reel
RDS(on) () VGS = -10 V 0.50 • Dynamic dV/dt rating
Available
• Repetitive avalanche rated
Qg max. (nC) 44
• P-channel
Qgs (nC) 7.1 • Fast switching Available

Qgd (nC) 27 • Ease of paralleling

Configuration Single • Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
S Note
* This datasheet provides information about parts that are
I2PAK (TO-262) D2PAK (TO-263) RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
G
DESCRIPTION
G Third generation power MOSFETs from Vishay provide the
S D designer with the best combination of fast switching,
D S
G ruggedized device design, low on-resistance and
cost-effectiveness.
D The D2PAK (TO-263) is a surface mount power package. It
P-Channel MOSFET provides the highest power capability and the lowest
possible on-resistance in any existing surface mount
package. The D2PAK (TO-263) is suitable for high current
applications because of its low internal connection
resistance and can dissipate up to 2.0 W in a typical surface
mount application. The through-hole version (IRF9640L,
SiHF9640L) is available for low-profile applications.

ORDERING INFORMATION
Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262)
Lead (Pb)-free and Halogen-free SiHF9640S-GE3 - - SiHF9640L-GE3
IRF9640SPbF IRF9640STRLPbF a IRF9640STRRPbF a IRF9640LPbF
Lead (Pb)-free
SiHF9640S-E3 SiHF9640STL-E3 a SiHF9640STR-E3 a SiHF9640L-E3
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS -200
V
Gate-Source Voltage VGS ± 20
TC = 25 °C -11
Continuous Drain Current VGS at -10 V ID
TC = 100 °C -6.8 A
Pulsed Drain Current a IDM -44
Linear Derating Factor 1.0
W/°C
Linear Derating Factor (PCB mount) e 0.025
Single Pulse Avalanche Energy b EAS 700 mJ
Avalanche Current a IAR -11 A
Repetitive Avalanche Energy a EAR 13 mJ
Maximum Power Dissipation TC = 25 °C 125
PD W
Maximum Power Dissipation (PCB mount) e TA = 25 °C 3.0
Peak Diode Recovery dV/d c dV/dt -5.0 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg -55 to +150
°C
Soldering Recommendations (Peak temperature) d for 10 s 300
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = -50 V, starting TJ = 25 °C, L = 8.7 mH, Rg = 25 , IAS = -11 A (see fig. 12).
c. ISD  -11 A, dI/dt  150 A/μs, VDD  VDS, TJ  150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).

S16-0754-Rev. E, 02-May-16 1 Document Number: 91087

For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA - 62
Maximum Junction-to-Ambient 
RthJA - 40 °C/W
(PCB mount) a
Maximum Junction-to-Case (Drain) RthJC - 1.0
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = -250 μA -200 - - V
VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = -1 mA - -0.20 - V/°C
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250 μA -2.0 - -4.0 V
Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA
VDS = -200 V, VGS = 0 V - - -100
Zero Gate Voltage Drain Current IDSS μA
VDS = -160 V, VGS = 0 V, TJ = 125 °C - - -500
Drain-Source On-State Resistance RDS(on) VGS = -10 V ID = 6.6 A b - - 0.50 
Forward Transconductance gfs VDS = -50 V, ID = -6.6 A b 4.1 - - S
Dynamic
Input Capacitance Ciss VGS = 0 V, - 1200 -
Output Capacitance Coss VDS = -25 V, - 370 - pF
Reverse Transfer Capacitance Crss f = 1.0 MHz, see fig. 5 - 81 -
Total Gate Charge Qg - - 44
ID = -11 A, VDS = -160 V,
Gate-Source Charge Qgs VGS = -10 V - - 7.1 nC
see fig. 6 and 13 b
Gate-Drain Charge Qgd - - 27
Turn-On Delay Time td(on) - 14 -
Rise Time tr VDD = -100 V, ID = -11 A, - 43 -
ns
Turn-Off Delay Time td(off) Rg = 9.1 , RD = 8.6 , see fig. 10 b - 39 -
Fall Time tf - 38 -
Between lead, D

Internal Drain Inductance LD - 4.5 -

6 mm (0.25") from
nH
package and center of G

Internal Source Inductance LS die contact - 7.5 -

S

Gate Input Resistance Rg f = 1 MHz, open drain 0.3 - 1.7 

Drain-Source Body Diode Characteristics
MOSFET symbol
Continuous Source-Drain Diode Current IS showing the 
D
- - -11
integral reverse G
A
Pulsed Diode Forward Current a ISM p -n junction diode S
- - -44

Body Diode Voltage VSD TJ = 25 °C, IS = -11 A, VGS = 0 V b - - -5.0 V

Body Diode Reverse Recovery Time trr - 250 300 ns
TJ = 25 °C, IF = -11 A, dI/dt = 100 A/μs b
Body Diode Reverse Recovery Charge Qrr - 2.9 3.6 μC
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.

S16-0754-Rev. E, 02-May-16 2 Document Number: 91087

For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

RDS(on), Drain-to-Source On Resistance

VGS 3.0
ID = - 11 A
Top - 15 V VGS = - 10 V
- 10 V
- 8.0 V 2.5
- ID, Drain Current (A)

- 7.0 V
- 6.0 V
- 5.5 V 2.0

(Normalized)
- 5.0 V
101 Bottom - 4.5 V
1.5

1.0

- 4.5 V
0.5
20 µs Pulse Width
TC = 25 °C
100 0.0
100 101 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160
91087_01 - VDS, Drain-to-Source Voltage (V) 91087_04 TJ, Junction Temperature (°C)

Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 4 - Normalized On-Resistance vs. Temperature

VGS 2400
VGS = 0 V, f = 1 MHz
Top - 15 V Ciss = Cgs + Cgd, Cds Shorted
- 10 V 2000 Crss = Cgd
- 8.0 V
- ID, Drain Current (A)

Coss = Cds + Cgd

- 7.0 V
Capacitance (pF)

- 6.0 V 1600
101
- 5.5 V
Ciss
- 5.0 V
Bottom - 4.5 V 1200

800
- 4.5 V
Coss
400
20 µs Pulse Width Crss
TC = 150 °C
100 0
100 101 100 101

91087_02 - VDS, Drain-to-Source Voltage (V) 91087_05 - VDS, Drain-to-Source Voltage (V)

Fig. 2 - Typical Output Characteristics, TC = 150 °C Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

20
ID = - 11 A
- VGS, Gate-to-Source Voltage (V)

VDS = - 160 V
16
- ID, Drain Current (A)

150 °C VDS = - 100 V

25 °C
101
VDS = - 40 V
12

100 4
20 µs Pulse Width For test circuit
VDS = - 50 V see figure 13
0
4 5 6 7 8 9 10 0 10 20 30 40 50 60
91087_03 - VGS, Gate-to-Source Voltage (V) 91087_06 QG, Total Gate Charge (nC)

Fig. 3 - Typical Transfer Characteristics Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

S16-0754-Rev. E, 02-May-16 3 Document Number: 91087

For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay Siliconix

12
- ISD, Reverse Drain Current (A)

10

- ID, Drain Current (A)

101
8

25 °C
150 °C 6

100
4

VGS = 0 V
10-1 0
0.0 1.0 2.0 3.0 4.0 5.0 25 50 75 100 125 150
91087_07 - VSD, Source-to-Drain Voltage (V) 91087_09 TC, Case Temperature (°C)

Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 9 - Maximum Drain Current vs. Case Temperature

RD
102 VDS
Operation in this area limited
by RDS(on)
5 VGS
10 µs
D.U.T.
- ID, Drain Current (A)

Rg -
2 +VDD
100 µs
10 - 10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
5 1 ms
Fig. 10a - Switching Time Test Circuit
2 TC = 25 °C
TJ = 150 °C 10 ms
td(on) tr td(off) tf
Single Pulse
1 VGS
2 5 2 5 2 5
1 10 102 103 10 %
91087_08 - VDS, Drain-to-Source Voltage (V)

Fig. 8 - Maximum Safe Operating Area

90 %
VDS

Fig. 10b - Switching Time Waveforms

10
Thermal Response (ZthJC)

1
D = 0.50
PDM
0.20

0.1 0.10 t1
0.05 t2
Single Pulse Notes:
0.02
(Thermal Response) 1. Duty Factor, D = t1/t2
0.01
2. Peak Tj = PDM x ZthJC + TC
10-2
10-5 10-4 10-3 10-2 0.1 1 10

91087_11 t1, Rectangular Pulse Duration (s)

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

S16-0754-Rev. E, 02-May-16 4 Document Number: 91087

For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 IRF9640S, SiHF9640S, IRF9640L, SiHF9640L
www.vishay.com
Vishay Siliconix

L IAS
VDS
Vary tp to obtain
required IAS
VDS
Rg D.U.T
-
+ V DD
IAS VDD
- 10 V tp
tp 0.01 Ω
VDS

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

1600
ID
EAS, Single Pulse Energy (mJ)

Top - 4.9 A
- 7.0 A
1200 Bottom - 11 A

800

400

VDD = - 50 V
0
25 50 75 100 125 150

91087_12c Starting TJ, Junction Temperature (°C)

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Current regulator
Same type as D.U.T.

QG 50 kΩ
- 10 V 12 V 0.2 µF
0.3 µF

QGS QGD -

D.U.T. + VDS

VG
VGS

- 3 mA

Charge
IG ID
Current sampling resistors

Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit

S16-0754-Rev. E, 02-May-16 5 Document Number: 91087

For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

D.U.T. +
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
-

- - +

Rg • dV/dt controlled by Rg +
• ISD controlled by duty factor “D” VDD
• D.U.T. - device under test -

Note
• Compliment N-Channel of D.U.T. for driver

Driver gate drive

Period P.W.
D=
P.W. Period

VGS = - 10 Va

D.U.T. lSD waveform

Reverse
recovery Body diode forward
current current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
VDD
Re-applied
voltage
Body diode forward drop
Inductor current

ISD
Ripple ≤ 5 %

Note
a. VGS = - 5 V for logic level and - 3 V drive devices

Fig. 14 - For P-Channel










Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91087.

S16-0754-Rev. E, 02-May-16 6 Document Number: 91087

For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Package Information
Vishay Siliconix

TO-263AB (HIGH VOLTAGE)

A
(Datum A)
3 4 A A B
E c2
H
4 L1 4 Gauge
plane
0° to 8° B
D 5 Detail A Seating plane
H
C C L A1
1 L3 L4
2 3
Detail “A”
L2
Rotated 90° CW
B B
scale 8:1

A
2 x b2
2xb c
E
0.010 M A M B
± 0.004 M B
2xe
Base
5 metal D1
Plating 4
b1, b3

(c) c1 5

(b, b2)
Lead tip Section B - B and C - C E1 4
Scale: none View A - A

MILLIMETERS INCHES MILLIMETERS INCHES

DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190 D1 6.86 - 0.270 -
A1 0.00 0.25 0.000 0.010 E 9.65 10.67 0.380 0.420
b 0.51 0.99 0.020 0.039 E1 6.22 - 0.245 -
b1 0.51 0.89 0.020 0.035 e 2.54 BSC 0.100 BSC
b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625
b3 1.14 1.73 0.045 0.068 L 1.78 2.79 0.070 0.110
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066
c1 0.38 0.58 0.015 0.023 L2 - 1.78 - 0.070
c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC
D 8.38 9.65 0.330 0.380 L4 4.78 5.28 0.188 0.208
ECN: S-82110-Rev. A, 15-Sep-08
DWG: 5970
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the
outmost extremes of the plastic body at datum A.
4. Thermal PAD contour optional within dimension E, L1, D1 and E1.
5. Dimension b1 and c1 apply to base metal only.
6. Datum A and B to be determined at datum plane H.
7. Outline conforms to JEDEC outline to TO-263AB.

Document Number: 91364 www.vishay.com

Revision: 15-Sep-08 1
 Package Information
Vishay Siliconix

I2PAK (TO-262) (HIGH VOLTAGE)

(Datum A) A B
E A c2 E

A
L1

Seating
D1
plane
D

C C
L2

B B L

A
c
3 x b2 E1

3xb A1 Section A - A

2xe Base
metal
Plating b1, b3
0.010 M A M B

c c1

(b, b2)
Lead tip
Section B - B and C - C
Scale: None

MILLIMETERS INCHES MILLIMETERS INCHES

DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190 D 8.38 9.65 0.330 0.380
A1 2.03 3.02 0.080 0.119 D1 6.86 - 0.270 -
b 0.51 0.99 0.020 0.039 E 9.65 10.67 0.380 0.420
b1 0.51 0.89 0.020 0.035 E1 6.22 - 0.245 -
b2 1.14 1.78 0.045 0.070 e 2.54 BSC 0.100 BSC
b3 1.14 1.73 0.045 0.068 L 13.46 14.10 0.530 0.555
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.065
c1 0.38 0.58 0.015 0.023 L2 3.56 3.71 0.140 0.146
c2 1.14 1.65 0.045 0.065
ECN: S-82442-Rev. A, 27-Oct-08
DWG: 5977
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outmost
extremes of the plastic body.
3. Thermal pad contour optional within dimension E, L1, D1, and E1.
4. Dimension b1 and c1 apply to base metal only.

Document Number: 91367 www.vishay.com

Revision: 27-Oct-08 1
 AN826
Vishay Siliconix

RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead

0.420
(10.668)

(9.017)
0.355
(16.129)
0.635

0.145
(3.683)

0.135
(3.429)

0.200 0.050
(5.080) (1.257)

Recommended Minimum Pads

Dimensions in Inches/(mm)

Return to Index

Document Number: 73397 www.vishay.com

11-Apr-05 1
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Disclaimer

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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.

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Revision: 13-Jun-16 1 Document Number: 91000