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    2SC5342

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    Wanderley Moreira
    This document provides information on the 2SC5342 NPN silicon transistor. It is a medium power amplifier transistor with a large collector current of 500mA and low collector saturation voltage, enabling low-voltage operation. It has a TO-92 package and its key electrical characteristics including a DC current gain of 70-240, collector-emitter saturation voltage of 0.25V max, and transition frequency of 300MHz min are provided. It is intended for use in general electronic equipment but not applications requiring high reliability without consulting the manufacturer first.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    2SC5342

    Uploaded by

    Wanderley Moreira
    50 views4 pages
    This document provides information on the 2SC5342 NPN silicon transistor. It is a medium power amplifier transistor with a large collector current of 500mA and low collector saturation voltage, enabling low-voltage operation. It has a TO-92 package and its key electrical characteristics including a DC current gain of 70-240, collector-emitter saturation voltage of 0.25V max, and transition frequency of 300MHz min are provided. It is intended for use in general electronic equipment but not applications requiring high reliability without consulting the manufacturer first.

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    This document provides information on the 2SC5342 NPN silicon transistor. It is a medium power amplifier transistor with a large collector current of 500mA and low collector saturation voltage, enabling low-voltage operation. It has a TO-92 package and its key electrical characteristics including a DC current gain of 70-240, collector-emitter saturation voltage of 0.25V max, and transition frequency of 300MHz min are provided. It is intended for use in general electronic equipment but not applications requiring high reliability without consulting the manufacturer first.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    50 views4 pages

    2SC5342

    Uploaded by

    Wanderley Moreira
    This document provides information on the 2SC5342 NPN silicon transistor. It is a medium power amplifier transistor with a large collector current of 500mA and low collector saturation voltage, enabling low-voltage operation. It has a TO-92 package and its key electrical characteristics including a DC current gain of 70-240, collector-emitter saturation voltage of 0.25V max, and transition frequency of 300MHz min are provided. It is intended for use in general electronic equipment but not applications requiring high reliability without consulting the manufacturer first.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
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    2SC5342

    Semiconductor
    NPN Silicon Transistor

    Description
    • Medium power amplifier

    Features
    • Large collector current : IC=500mA
    • Low collector saturation voltage enabling low-voltage operation
    • Complementary pair with 2SA1979

    Ordering Information
    Type NO. Marking Package Code

    2SC5342 C5342 TO-92

    Outline Dimensions unit : mm

    3.35~3.55
    4.4~4.6
    2.15~2.35
    4.4~4.6

    0.38~0.42
    1.96~2.16
    14.0±0.40

    1.27 Typ.

    2.54 Typ.

    1 2 3
    1.1~1.3

    0.38

    PIN Connections
    1. Emitter
    2. Collector
    3. Base

    KST-9004-003 1
    2SC5342

    Absolute maximum ratings (Ta=25°C)


    Characteristic Symbol Ratings Unit
    Collector-Base voltage VCBO 40 V
    Collector-Emitter voltage VCEO 32 V
    Emitter-Base voltage VEBO 5 V
    Collector current IC 500 mA
    Collector dissipation PC 625 mW
    Junction temperature Tj 150 °C
    Storage temperature Tstg -55~150 °C

    Electrical Characteristics (Ta=25°C)


    Characteristic Symbol Test Condition Min. Typ. Max. Unit
    Collector-Base breakdown voltage BVCBO IC=100µA, IE=0 40 - - V
    Collector-Emitter breakdown voltage BVCEO IC=1mA, IB=0 32 - - V
    Emitter-Base breakdown voltage BVEBO IE=10µA, IC=0 5 - - V
    Collector cut-off current ICBO VCB=40V, IE=0 - - 0.1 µA
    Emitter cut-off current IEBO VEB=5V, IC=0 - - 0.1 µA
    *
    DC current gain hFE VCE=1V, IC=100mA 70 - 240 -
    Collector-Emitter saturation voltage VCE(sat) IC=100mA, IB=10mA - 0.25 V
    Transition frequency fT VCE=6V, IE=-20mA - 300 - MHz
    Collector output capacitance Cob VCB=6V, IE=0, f=1MHz - 7.0 - pF
    * : hFE Rank / O : 70~140, Y : 120~240

    KST-9004-003 2
    2SC5342
    Electrical Characteristic Curves

    Fig. 1 Pc - Ta Fig. 2 IC - VBE

    Fig. 3 IC - VCE Fig. 4 VCE(SAT) - IC

    Fig. 5 hFE - IC

    KST-9004-003 3
    2SC5342

    These AUK products are intended for usage in general electronic equipments(Office and

    communication equipment, measuring equipment, domestic electrification, etc.).

    Please make sure that you consult with us before you use these AUK products in equipm-

    ents which require high quality and/or reliability, and in equipments which could have

    major impact to the welfare of human life(atomic energy control, airplane, spaceship, traffic

    signal, combustion central, all types of safety device, etc.).

    AUK cannot accept liability to any damage which may occur in case these AUK products

    were used in the mentioned equipments without prior consultation with AUK.

    KST-9004-003 4

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