Ordering number : ENA0403 F5H2201

SANYO Semiconductors
DATA SHEET
NPN Epitaxial Planar Silicon Transistor

F5H2201 50V / 15A High-Speed Switching

Applications
Applications
• High-speed switching applications (switching regulator, driver circuit).

Features
• Adoption of MBIT process.
• Large current capacitance.
• Low collector-to-emitter saturation voltage.
• High-speed switching.
• The F5H2201 consists of two chips which are equivalent to the 2SC6082 encapsulated in a package.

Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO 60 V
Collector-to-Emitter Voltage VCES 60 V
Collector-to-Emitter Voltage VCEO 50 V
Emitter-to-Base Voltage VEBO 6 V
Collector Current IC 10 A
Collector Current (PW=1s) IC Duty cycle≤1% 12 A
Collector Current (PW=100ms) IC Duty cycle≤1% 15 A
Collector Current (Pulse) ICP PW≤10µs, duty cycle≤10% 20 A
Base Current IB 3 A
2 W
Collector Dissipation PC
Tc=25°C, 1unit 25 W
Total Dissipation PT Tc=25°C 28 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C

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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

53007FA TI IM TC-00000572 No. A0403-1/5

 F5H2201

Electrical Characteristics at Ta=25°C

Ratings
Parameter Symbol Conditions Unit
min typ max
Collector Cutoff Current ICBO VCB=40V, IE=0A 10 µA
Emitter Cutoff Current IEBO VEB=4V, IC=0A 10 µA
hFE1 VCE=2V, IC=330mA 200 560
DC Current Gain
hFE2 VCE=2V, IC=10A 50
Gain-Bandwidth Product fT VCE=10V, IC=2A 195 MHz
Output Capacitance Cob VCB=10V, f=1MHz 85 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=7.5A, IB=375mA 250 500 mV
Base-to-Emitter Saturation Voltage VBE(sat) IC=7.5A, IB=375mA 1.2 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=100µA, IE=0A 60 V
Collector-to-Emitter Breakdown Voltage V(BR)CES IC=100µA, RBE=0Ω 60 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE=∞ 50 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=100µA, IC=0A 6 V
Turn-ON Time ton See specified Test Circuit. 52 ns
Storage Time tstg See specified Test Circuit. 560 ns
Fall Time tf See specified Test Circuit. 37 ns

Note : The specifications shown above are for each individual transistor.

Package Dimensions Electrical Connection

unit : mm (typ)
7526-001 2
1 : Base1(TR1)
2 : Emitter1(TR1)
10.0 4.5 1 TR1
3 : Collector(Common)
3.2 2.8 3 4 : Base2(TR2)
4 TR2 5 : Emitter2(TR2)
3.5
7.2

5 Top view
16.0

2.4
3.6

0.9
14.0

0.5

12 3 45
2.54 0.7 1 : Base1(TR1)
1.27 2.75 2 : Emitter1(TR1)
3 : Collector(Common)
4 : Base2(TR2)
2.4

5 : Emitter2(TR2)

1.27 2.54 SANYO : TO-220FI5H

Switching Time Test Circuit

IB1
PW=20µs
D.C.≤1% IB2 OUTPUT

INPUT RB
VR RL

50Ω + +

100µF 470µF

VBE= --5V VCC=25V

IC=20IB1= --20IB2=5A

No. A0403-2/5
 F5H2201
IC -- VCE IC -- VCE
15 7
A
A
100m mA 0mA 30mA

mA
14 50m

mA
1 50 4

250
13 6

60
A
mA
12 0m 20mA
20

A
Collector Current, IC -- A

Collector Current, IC -- A
50mA

70m
11 300
5
10 15mA
mA

A
9
4

80m
30mA
350

8
7 10mA
20mA 3
6
5
2 5mA
4 10mA
3
2 1
1
IB=0mA IB=0mA
0 0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Collector-to-Emitter Voltage, VCE -- V IT11022 Collector-to-Emitter Voltage, VCE -- V IT11023
IC -- VBE hFE -- IC
15 1000
14
VCE=2V VCE=2V
7
13 5 Ta=75°C
12
Collector Current, IC -- A

11 3 25°C

DC Current Gain, hFE

10 2 --25°C
9
8
100
7
C
25°

7
6
5 5
5°C

4
7

°C

3
Ta=

3
--25

2 2

1
0 10
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3
Base-to-Emitter Voltage, VBE -- V IT11024 Collector Current, IC -- A IT11025
hFE -- IC f T -- IC
1000 1000
Ta=25°C VCE=2V
7 7
Gain-Bandwidth Product, f T -- MHz

5 5
VC

3 3
DC Current Gain, hFE

E
=2
.0

2 2
0.2

0.5

V
V

1.0V

100 100
0.7
7 V 7
5 5

3 3

2 2

10 10
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10
Collector Current, IC -- A IT11026 Collector Current, IC -- A IT11027
Cob -- VCB VCE(sat) -- IC
1000 1.0
f=1MHz 7
IC / IB=20
7
5
Saturation Voltage, VCE(sat) -- V

5
Output Capacitance, Cob -- pF

3
3
2
2

0.1
Collector-to-Emitter

100 7
7 5
°C
5 = 75 C
3
Ta 5°
2
--2
3
°C
2 25
0.01
7
10 5
0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3
Collector-to-Base Voltage, VCB -- V IT11028 Collector Current, IC -- A IT11029

No. A0403-3/5
 F5H2201
VCE(sat) -- IC VBE(sat) -- IC
1.0 3
IC / IB=50 IC / IB=20
7
Saturation Voltage, VCE(sat) -- V

Saturation Voltage, VBE(sat) -- V

5 2

2
1.0
Ta= --25°C
Collector-to-Emitter

0.1
7

Base-to-Emitter
7
5 °C 75°C
=7

C
5°
5
Ta 5 25°C

--2
3
°C
2 25 3

0.01 2
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3
Collector Current, IC -- A IT11030 Collector Current, IC -- A IT11031
Forward Bias A S O PC -- Ta
5 2.5
3 ICP=20A IC=15A (PT=100ms)
2
10
ms

Collector Dissipation, PC -- W
10 2.0
7 IC=10A (DC)
Collector Current, IC -- A

50

5 10
0µ

3
0m
s

s
1m

2
1.5
s

No
DC

1.0 he
7 at
op

5 sin
era

k
tio

3 1.0
n

0.1
7
5 0.5
3
2
Tc=25°C
Single pulse 0
0.01
0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 0 20 40 60 80 100 120 140 160
Collector-to-Emitter Voltage, VCE -- V IT11032 Ambient Temperature, Ta -- °C IT11033
PC -- Tc
35

30
Collector Dissipation, PC -- W

28
25

To
20 ta lD
iss
ipa
15 1u tio
nit n

10

0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C IT11034

No. A0403-4/5
 F5H2201

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This catalog provides information as of May, 2007. Specifications and information herein are subject
to change without notice.

PS No. A0403-5/5