Wireless Device

Products 2018-2019
Sumitomo Electric
Reliable, Advanced Technology
Generating Value for the Customer
As an industry pioneer for over 30 years, Sumitomo Electric has overcome
many technical challenges to become the most respected supplier of
compound semiconductor products.
Our advanced technologies and solutions continue to meet the demand of growing
and diverse markets in the area of information/communications and sensor/radar.
At Sumitomo Electric, we are committed to providing the best value for
our customers while protecting the global environment.
Contents
Low Noise Amplifier MMICs (Die) . . . . . . . . . . . . . . P17
Total RF Solutions . . . . . . . . . . . . . . P03
GaAs FETs (Die) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P18
Internally Matched High Power GaAs FETs . . . . . . P19
Power GaN
High Power GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . P23
GaN HEMTs for Radio Link and SATCOM . . . . . . . . P05

GaN HEMTs for Base Station . . . . . . . . . . . . . . . . . . . P06

GaN HEMTs for Radar . . . . . . . . . . . . . . . . . . . . . . . . . P09

Small Signal
Small Signal GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . P25
GaN HEMTs for General Purpose . . . . . . . . . . . . . . . P1 1

Low-noise Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P26

GaAs HEMTs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P12
Sealing Rules . . . . . . . . . . . . . . . . . . . . . . P32

Power GaAs
Power Amplifier MMICs (Packages) . . . . . . . . . . . . P13
Creating Value for Customers P33
Power Amplifier MMICs (Die) . . . . . . . . . . . . . . . . . . P15
Total RF Solutions from SUMITOMO ELECTRIC

Device Index
Applications BTS Point to Point, SATCOM
Radar
1000

GaN HEMTs for Radar

SGN/SGNE/SGFC Series
(Page 9)
SGK/SGC/SGM Series
100 (Page 10)

GaN HEMTs for Radio Link and

GaN HEMTs for Base Station SGK Series (Page 5)
SG/SGFC/SGN/EGN Series Internally Matched High Power
(Page 6, 7, 8)
ELM/FLM Series
(Page 19, 20, 21, 22)
10

GaN HEMTs for General Purpose

Output Power (W)

SGFC/SGNE Series
(Page 11)
PA MMICs
SMM/EMM/FMM
Series (Page 13, 14)
1
High Power GaAs FETs Small Signal GaAs FETs
FLC/FLK/FLL/FLU/FLX Series FSU/FSX Series
(Page 23, 24) (Page 25)
GaAs FETs (Die)
FLC/FLK/FLX/FSX Series
0.1 (Page 18)

GaAs HEMTs
FHC/FHX Series
(Page 12)

0.01

0.001
1

3 SUMITOMO ELECTRIC
 VSAT Point to Point VSAT Point to Point, FWA

SATCOM

GaAs FETs

PA MMICs
SMM/EMM/FMM Series
(Page 13, 14, 15, 16)

LNA MMICs (Die)

EMM/FMM Series
(Page 17)

10 100
Frequency (GHz)

SUMITOMO ELECTRIC 4
Power GaN

GaN HEMTs for Radio Link and SATCOM

Features Naming Rules
• High Output Power SGK 7785-30 A
• High Gain
• High Efficiency Series Name
• Internally Matched Output Power (W)
Frequency
(Ex 7785 : 7.7 to 8.5GHz)
Internally Matched
GaN-HEMT
GaN HEMTs for Satcom Lineup
Output Power at 5dB Gain Compression Level [dBm]

Output Power at 5dB Gain Compression Level [W]

I2F Package IBK Package I2C Package
SGK5867-100A/001 120
SGK7785-100A
50 100

90
SGK5867-60A SGK7785-60A SGK1314-60A
48 60
SGK6472-60A 50
SGK1314-50A
46 40
SGK5867-30A SGK7785-30A SGK1314-30A
30
SGK1011-25A
SGK6472-30A 25
44
SGK1314-25A
SGK5872-20A SGK7185-20A
43 20

5 6 7 8 9 10 11 12 13 14 15
Frequency [GHz]

Specifications
Freq. SCL Pout GL ηadd VDS lDS(DC) lDS(RF) Rth
IM3
Part Number (dBc) Pout Condition Package
(GHz) (dBm) (dBm) (dB) (%) (V) (A) (A) (°C/W)

SGK5867-30A 5.85-6.75 -45 29.5 45 13.5 45 24 1.75 2.7 2.2

IBK
SGK5867-60A 5.85-6.75 - 32 48 12.5 40 24 2.6 5.4 1.3
SGK5867-100A/001 5.85-6.75 -25 44 50.5 13.5 45 24 4 10 0.55 I2F
SGK5872-20A 5.85-7.2 -43 27.5 43 12 41 24 1.0 1.6 2.7 I2C
SGK6472-30A 6.4-7.2 -45 29.5 45 12.5 40 24 1.75 2.7 2.2
IBK
SGK6472-60A 6.4-7.2 - 32 48 12 39 24 2.6 5.4 1.3
SGK7185-20A 7.1-8.5 -43 27.5 43 11 39 24 1.0 1.7 2.7 I2C
SGK7785-30A 7.7-8.5 -45 29.5 45 12 39 24 1.75 2.7 2.2 CW Operation
IBK
SGK7785-60A 7.7-8.5 -42 32 48 11 37 24 2.6 5.4 1.3
SGK7785-100A 7.7-8.5 -25 44 50 12 42 24 4 10 0.55 I2F
SGK1011-25A 10.7-11.7 -42 29 44 10 33 24 1.2 2.7 1.9
SGK1314-25A 13.75-14.5 - - 44 8 29 24 0.75 2.5 1.8
SGK1314-30A 13.75-14.5 - - 45 8.5 32 24 0.9 3.3 1.5 IBK
SGK1314-50A 13.75-14.5 - - 47 8 29 24 1.5 5 1.3
SGK1314-60A 13.75-14.5 - - 48 8.5 32 24 1.8 6.6 0.8
Note: Tc (op)=+25°C
IM3: 3rd Order Intermodulation Distortion

Product Photo
IBK Package I2F Package I2C Package

5 SUMITOMO ELECTRIC
Power GaN

GaN HEMTs for Base Station

Features Naming Rules
• Designed for 3G/LTE/WiMAX Base Station SG 26 F 30 S - D
• Driver Stage for Macrocell & Final Stage for Microcell Package Code
• High Operationg Voltage : 50V S : Single GaN, T : Twin GaN
• High Gain : Gp=19dB @f=2.65GHz, 20W (SGFCF20S-D) Output Power (W)
• High Efficiency : 65% @f=2.65GHz, 20W (SGFCF20S-D) Series Number
• Full Mold SMT Package (Z2D) Frequency
(FC : DC to 3.7GHz)
GaN-HEMT

“F Series” Lineup
Capacitor
Output Power at 5dB Gain Compression Level [W]

Single Device Twin Device e. g. Twin Device of 40 watt consists of

GaN Chip two 20 watt GaN chips.

40 SGFCF40T-D

35

30 SG26F30S-D SGFCF30T-D SG36F30S-D

25
SGFCF20T-D

20 SGFCF20S-D

15 SGFCF15S-D

10 SGFCF10S-D

DC 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

Frequency [GHz]

Specifications (Driver and Final Stage)

Single Specified
Freq. Psat*1 Pout*2 Gp*2 ηd
*2
VDS IDS(DC) Rth*3
Part Number / Freq. Package
(GHz) (dBm) (dBm) (dB) (%) (V) (mA) (°C/W)
Twin (GHz)
SG26F30S-D Single DC-2.7 2.65 46 32.5 18.5 13.5 50 150 5.5
SGFCF10S-D Single DC-3.7 2.65 41 27.5 19.5 13.5 50 50 10
SGFCF15S-D Single DC-3.7 2.65 42.5 29 19.5 13.5 50 75 9
SGFCF20S-D Single DC-3.7 2.65 44 30.5 19 13.5 50 100 7
Z2D
SGFCF20T-D *4 Twin DC-3.7 2.65 41 27.5 19.5 13.5 50 50 10
SGFCF30T-D *4 Twin DC-3.7 2.65 42.5 29 19.5 13.5 50 75 9
SGFCF40T-D *4 Twin DC-3.7 2.65 44 30.5 19 13.5 50 100 7
SG36F30S-D Single 3.3-3.7 3.6 45.5 32 17 12.5 50 150 5.5
*1:10%-duty RF pulse(DC supply constant)
*2:Pout=(Ave.) , W-CDMA(3GPP3.4 12-00)BS-1 64ch 85% clipping modulation([email protected]%)
*3:Sampling Test : samples size 10pcs. Criteria(accept / reject)=(0 / 1)
*4:Specification of one path
Note: Tc (op)=+25°C

Product Photo
Z2D Package

WiMAX is a trademark or registered trademark of WiMAX Forum.

SUMITOMO ELECTRIC 6
Power GaN

GaN HEMTs for Base Station

Features Naming Rules
• Designed for 3G/LTE/WiMAX Base Station SGN 27 C 210 I2D
• Optimized for Doherty Architecture Package Code
• Higher Load Impedance: 15 to 20Ω @Final Stage (Easy Match, Wide Band) Output Power (W)
• High Operating Voltage: 50V Series Name
• High Power: Up to 320W Psat Single Ended Frequency
• High Gain: Gp=16dB @f=2.6GHz, 210W Device GaN-HEMT
• High Efficiency: 60-70% with Internal Class F Matching

“C Series” Lineup
Unmatched device Pre-matched device

320 SGNC320MK SGN19C320I2D SGN26C320I2D

EGN21C320IV SGN21C320I2D
300

280

260
Output Power at 5dB Gain Compression Level [W]

240

EGN21C210I2D SGN27C210I2D
220
EGNC210MK SGN19C210I2D EGN26C210I2D
200

180
EGN21C160I2D SGN27C160I2D

160 EGNC160MK SGN19C160I2D EGN26C160I2D

140

120 EGN21C105I2D

EGNC105MK EGN16C105MK SGN21C105MK EGN26C105I2D

100
EGN26C070I2D
80
EGN21C070MK EGN26C070MK EGN35C070I2D
60
SGN21C050MK SGN26C050MK
40
EGN21C030MK EGN26C030MK EGN35C030MK
20 EGN21C020MK EGN26C020MK

DC 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Frequency [GHz]

Specifications (Driver Stage)

Freq. Psat*1 Pout*2 Gp*2 ηd
*2
VDS lDS (DC) Rth
Part Number Package
(GHz) (dBm) (dBm) (dB) (%) (V) (mA) (°C/W)

EGN21C020MK 2.14 43.5 30 19 12.5 50 100 6.0

EGN21C030MK 2.14 45.0 31.5 19 12.5 50 150 5.0
EGN26C020MK 2.6 43.5 30 18 12.5 50 100 6.0 MK
EGN26C030MK 2.6 45.0 31.5 18 12.5 50 150 5.0
EGN35C030MK 3.5 45.0 31.5 16.5 11 50 150 5.0
*1: 10%-duty RF pulse(DC supply constant)
*2: Pout=(Ave.), CW
Note: Tc (op)=+25°C

7 SUMITOMO ELECTRIC
Specifications (Final Stage)
Freq. Psat*1 Pout Gp ηd VDS lDS (DC) Rth
Part Number Package
(GHz) (dBm) (dBm) (dB) (%) (V) (mA) (°C/W)

EGNC105MK 0.9 51.0 43.0*3 20.0*3 35*3 50 400 2.0

EGNC160MK 0.9 52.5 44.5*3 18.0*3 35*3 50 600 1.4
MK
EGNC210MK 0.9 53.5 45.5*3 17.5*3 35*3 50 750 1.1
EGN16C105MK 1.6 50.5 42.5*3 19.0*3 33*3 50 400 2.0
SGN19C210I2D 1.9 53.0 45.0*3 18.5*3 32*3 50 750 1.1
I2D
SGN19C160I2D 1.96 52.3 44.5*3 18.0*3 35*3 50 600 1.4
SGN21C105MK 2.1 50.3 42.5*3 17.0*3 32*3 50 400 2.0
MK
EGN21C070MK 2.14 49.5 41.5*3 17.0*3 33*3 50 300 2.5
EGN21C105I2D 2.14 50.3 42.0*2 18.0*2 32*2 50 400 2.0
EGN21C160I2D 2.14 52.5 44.5*2 18.0*2 32*2 50 600 1.4 I2D
EGN21C210I2D 2.14 53.0 45.0*2 18.0*2 32*2 50 750 1.1
EGN21C320IV 2.14 55.0 47.0*2 18.0*2 31*2 50 1100 0.8 IV
SGN21C050MK 2.14 47.0 39.0*3 18.5*3 33*3 50 200 3.0 MK
EGN26C070I2D 2.6 48.8 40.8*3 18.0*3 35*3 50 300 2.5 I2D
EGN26C070MK 2.6 48.8 40.8*3 16.5*3 30*3 50 300 2.5 MK
EGN26C105I2D 2.6 50.3 42.0*3 17.0*3 32*3 50 400 2.0
EGN26C160I2D 2.6 52.5 44.5*3 16.0*3 30*3 50 600 1.4 I2D
EGN26C210I2D 2.6 53.0 45.0*3 16.0*3 30*3 50 750 1.1
SGN26C050MK 2.6 47.0 39.0*3 17.5*3 33*3 50 200 3.0 MK
SGN27C160I2D 2.65 52.5 44.5*3 16.3*3 30*3 50 600 1.4
SGN27C210I2D 2.65 53.0 45.0*3 16.3*3 30*3 50 750 1.1 I2D
EGN35C070I2D 3.5 48.8 40.8*3 15.5*3 28*3 50 300 2.5
*1: 10%-duty RF pulse(DC supply constant)
*2: Pout=(Ave.), f0=2.135GHz, f1=2.145GHz, W-CDMA (3GPP3.4 12-00) BS-1 64ch 47.5% clipping modulation ([email protected]%)
*3: Pout=(Ave.), W-CDMA (3GPP3.4 12-00) BS-1 64ch 65% clipping modulation ([email protected]%)
Note: Tc (op)=+25°C

Specifications (Peak Stage of Doherty Amplifier)

Freq. Psat*1 Gp*2 VDS Rth
Part Number Package
(GHz) (dBm) (dB) (V) (°C/W)

SGNC320MK 0.9 55.0 16.5 50 1.2 MK

SGN19C320I2D 1.9 55.0 18 50 1.2
SGN21C320I2D 2.14 55.0 17.5 50 1.2 I2D
SGN26C320I2D 2.6 55.0 16 50 1.2
*1: 10%-duty RF pulse (DC supply constant : IDS(DC)=10mA)
*2: Pout=3dB back off point, 10%-duty RF pulse (DC supply constant : IDS(DC)=10mA)
Note: Tc (op)=+25°C

Product Photo
MK Package I2D Package IV Package

SUMITOMO ELECTRIC 8
Power GaN

GaN HEMTs for Radar

Features Naming Rules
• Designed for S-band Radar Applications SGN 2729-600 H - R
• 50 ohm matched
Radar Applications
• High Power: Up to 600W
Series Name
• High Efficiency: 65%
Output Power (W)
• High Operating Voltage: 50V
Frequency
• Broadband Operation (Ex 2729 : 2.7 to 2.9GHz)
• High Gain
GaN-HEMT
• Low Thermal Resistance (Rth)

GaN HEMTs for Radar Lineup

Gain Compression Level [W]

600 SGN2729-600H-R
550
Output Power at 5dB

500
SGN2731-500H-R SGN3135-500H-R
450
400
350
300
250 SGN2729-250H-R
200
150 SGN3035-150H-R
100
2.7 2.9 3.1 3.3 3.5
Frequency [GHz]

Specifications
lDS
Freq. Pout Gp ηadd VDS Rth
Part Number (DC) Condition Package
(GHz) (W) (dB) (%) (V) (°C/W)
(mA)
SGN1214-220H-R 1.2-1.4 220 16.9 65 50 1000 0.55
Pulse Width:5msec, Duty:10%
SGN21-120H-R 1.7-2.5* 125 14.5 67.5 50 500 1.1
SGN2729-250H-R 2.7-2.9 250 13 65 50 750 1.1
Pulse Width:200µsec, Duty:10%
SGN2729-600H-R 2.7-2.9 600 12.8 60 50 1500 0.55 IV
SGN2731-500H-R 2.7-3.1 480 11.8 57 50 1500 0.55 Pulse Width:120µsec, Duty:10%
SGN3035-150H-R 3.0-3.5 150 12.8 62 50 500 1.1 Pulse Width:5msec, Duty:10%
SGN3135-500H-R 3.1-3.5 480 10.8 58 50 1500 0.55 Pulse Width:200µsec, Duty:10%
*: Test Frequency 2.1GHz
Note: Tc (op)=+25°C

Specifications (Driver Stage)

Freq. P3dB GL ηadd VDS lDS (DC) Rth
Part Number Package
(GHz) (dBm) (dB) (%) (V) (mA) (°C/W)

SGFCF2002S-D 3.0 43.6 28.6 45 50 135 3.8 Z2D

SGN31E030MK 3.1 46 15 40 50 200 2
MK
SGNE010MK 3.5 40.5 16 55 50 100 4.5
Note: Tc (op)=+25°C

Product Photo
MK Package IV Package Z2D Package

9 SUMITOMO ELECTRIC
Features Naming Rules
• High Output Power SGC 8598-50 A - R
• High Gain Radar Applications
• High Efficiency Series Name
• Internally Matched Output Power (W)
Frequency
(Ex 5254 : 5.2 to 5.4GHz)
Internally Matched
GaN-HEMT
GaN HEMTs for Radar C/X Lineup
I2F Package IBK Package IK Package VU Package
Output Power at 5dB Gain Compression Level [dBm]

Output Power at 5dB Gain Compression Level [W]

SGC0910-300A-R
SGC8598-200A-R
54 200
SGC0910-200A-R
SGC9395-130A-R
52 SGC1112-100A-R
SGK5254-120A-R
SGK0910-120A-R 120
50 SGC8598-100A-R 100

90

48 SGK0910-60A-R 60

SGC8598-50A-R 50

46 SGM6901VU 40
SGK5254-30A-R
SGK0910-30A-R 30

5 6 7 8 9 10 11 12
Frequency [GHz]
Specifications (C/X)
Freq. Pout Gp ηadd VDS lDS(RF) Rth
Part Number Condition Package
(GHz) (dBm) (dB) (%) (V) (A) (°C/W)
SGK5254-30A-R 5.2-5.4 45.5 16.5 49 24 2.8 2.2 IBK
SGK5254-120A-R 5.2-5.4 51.5 16.5 47 24 11.6 0.65 I2F
SGC8598-50A-R 8.5-9.8 47 10 40 50 2.8 2.4
SGC8598-100A-R 8.5-9.8 50 10 40 50 5.7 1.4
SGC8598-200A-R 8.5-9.8 54 10 38 50 11.8 0.6 IK
SGC0910-300A-R 9.0-10.0 55.3 9.3 35 50 17.1 0.7
SGC9395-130A-R 9.3-9.5 52 10 38 50 7.5 1.2 Pulse Width:100µsec,Duty:10%
SGK0910-30A-R 9.2-10 45 11.5 35 24 3 2.2
IBK
SGK0910-60A-R 9.2-10 48 11.5 35 24 5.9 1.1
SGK0910-120A-R 9.2-10 51 11.5 35 24 11.6 0.65 I2F
SGC0910-200A-R 9.2-10.5 53.5 9.5 38 50 11.8 0.6
IK
SGC1112-100A-R 11.4-12.0 51 9 36 50 6.1 1.4
SGM6901VU 8.5-10.1 45.3 23.3 38 50 1.8 2.1 VU
Note: Tc (op)=+25°C

Product Photo
VU Package IBK Package IK Package I2F Package

SUMITOMO ELECTRIC 10
Power GaN

GaN HEMTs for General Purpose

Features Naming Rules
• Unmatched Broadband Operation up to 3.5GHz SGN E 010 MK
• High Efficiency
• 50V Operation Package Code
• Low Thermal Resistance (Rth) Output Power (W)
Series Name
GaN-HEMT

Lineup
MK Package Device Z2D Package * Low Rth Devices
Output Power at 5dB Gain Compression Level [W]

90 SGNE090MK

80

70 SGNE070MK

60

50
SGNE045MK *
40

30 SGNE030MK *

20 SGFCF2002S-D

10 SGNE010MK *

DC 1.0 1.5 2.0 2.5 3.0 3.5

Frequency [GHz]

Specifications
Freq. Psat GL ηadd lDS (DC) Rth
Part Number Condition Package
(GHz) (dBm) (dB) (%) (mA) (°C/W)

SGNE070MK 0.9 49.5 20 65 400 1.5

SGNE090MK 0.9 51.0 20 65 500 1.2
MK
SGNE045MK 2.2 47.5 15 55 250 1.4
CW
SGNE030MK 2.7 46.5 16 55 200 2
SGFCF2002S-D 3.0 42.5 25.5 44 135 3.8 Z2D
SGNE010MK 3.5 40.5 16 55 100 4.5 MK
Note: Tc=+25°C

Product Photo
MK Package Z2D Package

11 SUMITOMO ELECTRIC
Low-noise

GaAs HEMTs

HEMT series of products was developed by Sumitomo Naming Rules

Electric for a wide range of general purpose applications FH X 13 LG
including, but not limited, to DBS converters, Handsets, Package Code
Base Station, Radio-Telescope and many other applications Number
where low-noise and gain is required. Sumitomo Frequency Band
Electric has a full line-up of HEMT products specified for HEMT

applications in the 4GHz to 12GHz frequency range.

Specifications
Specified
NF Gas VDS IDS(DC)
Part Number Freq. Package Application
(dB) (dB) (V) (mA)
(GHz)

FHC30LG 0.35 14.5 2 10 4 Low Noise

FHC40LG 0.3 15.5 2 10 4 LG Amp,TVRO, BTS

FHX04LG 0.75 10.5 2 10 12

FHX04X 0.75 10.5 2 10 12 -
Low Noise Amp
FHX13LG 0.45 13 2 10 12 LG
FHX13X 0.45 13 2 10 12 -
FHX35LG 1.2 10 3 10 12 LG Low Noise Amp,
FHX35LP 1.2 10 3 10 12 LP Mixer, GPS

FHX35X 1.2 10 2 10 12
-
FHX45X 0.55 12 2 10 12 Low Noise Amp
FHX76LP 0.4 13.5 2 10 12 LP
X: Conventional Chip
Note: Tc (op) = +25°C

Product Photo
LG Package LP Package

SUMITOMO ELECTRIC 12
Power GaAs

Power Amplifier MMICs (Packages)

Sumitomo Electric provides GaAs power amplifier MMICs mounted in a suitable high
frequency package with output power 50mW - 2W at frequencies ranging from C-band to
Ka-band. Sumitomo Electric provides various types of packages including highly reliable
hermetically sealed types, low cost surface mount types and very low cost QFN types.
These MMICs can be packaged to meet the customer's cost/performance requirements.

Features Naming Rules

• Input and Output Internally Matched Zin/Zout = 50Ω
• High Output Power (Up to 2W)
SM M 5845 V1B
Package Code
• High Gain
Number
• Low Distortion Monolithic IC
• Small Hermetically Sealed Package (V1B/V1D/VU/VF) Microwave
• Low Cost Surface Mount Package (ZV/ZB/V1B/V1D/VU)

Power Amplifier MMIC Lineup (Package)

35 EMM5081V1B
EMM5057VF FMM5059VF FMM5059VU
34 EMM5075VU SMM5845V1B
FMM5056VF EMM5836V1B SMM5855V1D
33 SMM5854V1D

32 SMM5085V1B
Output Power [dBm]

EMM5074VU FMM5822VU EMM5832VU SMM5846V1D

31
FMM5061VF
30
EMM5068VU
29 EMM5077VU

28
27
EMM5078ZV EMM5838V1B
26 EMM5079ZB

25
24

3.0 5.0 10.0 15.0 20.0 25.0 30.0

Frequency [GHz]

Product Photo
ZV Package ZB Package VU Package VF Package

V1B Package V1D Package

13 SUMITOMO ELECTRIC
Specifications
IDD
Freq. P1dB G1dB OIP3 VDD IDD
Part Number (DC) Package Function/Application
(GHz) (dBm) (dBm) (dBm) (V) (P1dB)
(mA)

31 39.5
(f=3.4-4.2GHz) (f=3.4-4.2GHz) 1200 Power Amp.Radio
EMM5077VU 3.4-5.0 25 6 1100 VU
29.5 38 (f=3.4-4.2GHz) Link
(f=4.2-5.0GHz) (f=4.2-5.0GHz)

Driver Amp.,LO
EMM5078ZV 3.4-8.5 26 29 35 6 300 350 ZV Buffer Amp.C-Band
VSAT and Radio Link

FMM5056VF 5.8-7.2 34 28 - 10 1100 1100 VF

Power Amp.C-Band
32 VSAT and Radio Link
(f=5.8-7.1GHz) 1400
EMM5074VU 5.8-8.5 26 41 6 1200 VU
33 (f=5.8-7.1GHz)
(f=7.1-8.5GHz)
FMM5057VF 7.1-8.5 34 26 - 10 1100 1100 VF
33 25
(f=9.5-11.7GHz) (f=9.5-11.7GHz) 1500
EMM5068VU 9.5-13.3 40 6 1300 VU
31 23 (f=9.5-11.7GHz) Power Amp.Radio
(f=11.7-13.3GHz) (f=11.7-13.3GHz) Link
33 26
(f=9.5-11.7GHz) (f=9.5-11.7GHz) 1700
FMM5061VF 9.5-13.3 41.5 6 - VF
31 24 (f=9.5-11.7GHz)
(f=11.7-13.3GHz) (f=11.7-13.3GHz)
25.5 31
Driver Amp.,LO
(f=10-11.7GHz) (f=10-11.7GHz)
EMM5079ZB 10-15.4 22 6 350 380 ZB Buffer Amp.Ku-Band
24 35
VSAT and Radio Link
(f=11.7-15.4GHz) (f=11.7-15.4GHz)

EMM5075VU 12.7-15.4 33 25 42 6 1200 1500 VU

Power Amp.Ku-Band
VSAT and Radio Link

SMM5085V1B 12.7-15.4 32.5 24 42 6 1200 1500 V1B

EMM5081V1B 13.75-14.5 33.5 29 39.5 6 1200 1400 V1B

Power Amp.Ku-Band
FMM5059VF 13.75-14.5 35 28 40 7 1300 1600 VF
VSAT
FMM5059VU 13.75-14.5 33.5 29 39.5 6 1200 1400 VU
EMM5836V1B 17.7-19.7 32.5 26 40 6 1400 1800 V1B
FMM5822VU 17.7-19.7 32 21 38.5 6 850 1100 VU
SMM5854V1D 17.7-19.7 32.5 26 40 6 1400 1800 V1D
Power Amp.Radio
SMM5845V1B 21.2-23.6 33 21 41 6 1400 1800 V1B
Link
SMM5855V1D 21.2-23.6 33 24 41 6 1400 1800 V1D
EMM5832VU 21.2-26.5 31 19 36.5 6 800 1000 VU
SMM5846V1D 27.5-29.5 31 19 39 6 1100 1450 V1D
Power Amp.Ka-Band
EMM5838V1B 29.5-30.0 26 24 - 6 220 280 V1B
VSAT
G.C.P.: Gain Compression Point
Note: Tc=+25°C

SUMITOMO ELECTRIC 14
Power GaAs

Power Amplifier MMICs (Die)

Sumitomo Electric is providing a full line-up of GaAs power amplifier MMIC chips with output
power at 50mW to 3W. These MMICs are designed for VSAT (Very Small Aperture Terminal)
and radio link transmitter applications that require high power, high gain and low distortion
in a 50Ω system. Sumitomo Electric has a full line-up of MMIC products specified from
C-band through V-band.
Naming Rules
Features EM M 5078 X
• Input and Output Internally Matched Zin/Zout = 50Ω
X: Chip
• High Output Power (Up to 3W) Number
• High Gain Monolithic IC
• Low Distortion Microwave
• High Reliability
Power Amplifier MMIC Lineup (Die)

EMM5075X
34 FMM5820X
FMM5822X
32 EMM5068X SMM5846X
EMM5074X
30 EMM5840X
Output Power [dBm]

28
EMM5078X EMM5834X
26 SMM5737X

EMM5079X FMM5804X
24 SMM5738X

22

20
EMM5717X
18
FMM5715X
16

3 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85
Frequency [GHz]

Product Photo
FMM5820X EMM5075X

FMM5715X EMM5717X EMM5078X

15 SUMITOMO ELECTRIC
Specifications
IDD
Freq. P1dB G1dB OIP3 VDD IDD (DC)
Part Number (P1dB) Function/Application
(GHz) (dBm) (dBm) (dBm) (V) (mA)
(mA)

Driver Amp., LO Buffer Amp.

EMM5078X 3.4-8.5 26 29 35 6 300 350
C-Band VSAT and Radio Link
32
(f=5.8-7.1GHz) Power Amp.C-Band
EMM5074X 5.8-8.5 27 41 6 1400 1450
32.5 VSAT and Radio Link
(f=7.1-8.5GHz)

EMM5068X 9.5-13.3 33 25 42.5 6 1500 1500 Power Amp.Radio Link

31
Driver Amp., LO Buffer
(f=10-11.7GHz)
EMM5079X 10-15.4 25 22.5 6 350 350 Amp.Ku-Band VSAT
35
and Radio Link
(f=11.7-15.4GHz)

Power Amp.Ku-Band
EMM5075X 12.7-15.4 33 26 43.5 6 1200 1300
VSAT and Radio Link

EMM5717X 12.7-24 18 22 - 3 - 180

Driver Amp., LO Buffer
Amp.Ku-Band VSAT
and Radio Link
EMM5834X 12.7-27 26 23 32.5 6 300 370

FMM5822X 17.5-20 32.5 21 41 6 850 1000 Power Amp.Radio Link

25
(f=17.5-30GHz) Driver Amp.Ka-Band
FMM5804X 17.5-31.5 18 - 6 250 300
23 VSAT and Radio Link
(f=30-31.5GHz)
EMM5840X 21-27 31 24 39 6 800 1000
Power Amp.Radio Link
SMM5846X 27.5-29.5 31 19 39 6 1100 1450

Power Amp.Ka-Band
FMM5820X 29.5-30 35 23 - 7 1500 2200
VSAT and Radio Link

FMM5715X 57-64 16 17 - 3 150 150

SMM5737X 71-76 25.5 25 32 4 1300 1320 Power Amp.Radio Link

SMM5738X 81-86 24.5 25 32 4 1300 1320

G.C.P.: Gain Compression Point

Note: Ta=+25°C

SUMITOMO ELECTRIC 16
Power GaAs

Low Noise Amplifier MMICs (Die)

Sumitomo Electric provides GaAs Low Noise amplifier MMICs designed for VSAT and radio
link receiver applications. The performance of low noise figure and high associated gain are
achieved using pHEMT technology and EB lithography process. Sumitomo Electric has line-
ups of MMIC products specified from Ku-band through V-band.
Features Naming Rules
• Input and Output Internally Matched Zin/Zout = 50Ω FM M 5701 X
• Low Noise Figure Package Code
• High Gain Serial Number
• Wide Band Monolithic IC
• High Reliability Bare Die (X) Microwave

Low Noise Amplifier MMIC Lineup

20
Output Power [dBm]

EMM5717X

15 FMM5709X

FMM5716X
10 FMM5703X

5 FMM5701X

12 15 20 25 30 35 40 45 50 55 60 64
Frequency [GHz]

Specifications
Freq. P1dB Gas IIP3 NF VDD(DC) IDD (DC) IDD(RF)
Part Number Package Application
(GHz) (dBm) (dB) (dBm) (dB) (V) (mA) (mA)

EMM5717X 12.7-24 18 23 - 2.5 3 - 180

FMM5709X 17.5-32 12.5 23 - 2.5 3 - 60
VSAT and
FMM5701X 18-28 7 13.5 - 1.5 5 12 12 Die
Radio Link
FMM5703X 24-32 9 18 - 2 3 20 20
FMM5716X 57-64 10 22 - 5 3 30 30
G.C.P.: Gain Compression Point
Note: Ta=+25°C

Product Photo
EMM5717X

17 SUMITOMO ELECTRIC
Power GaAs

GaAs FETs (Die)

Features Naming Rules

• High Gain, High Frequency Chip FL X 25 7 XV
Chip Form: XV (Via Hole PHS)
: XP (non Via Hole PHS)
Number
Output Power
Frequency Band
Large Signal

Specifications

P1dB G1dB ηadd Freq. VDS lDS

Part Number Application
(dBm) (dB) (%) (GHz) (V) (mA)

FLC087XP 28.5 7 31.5 8.0 10 180 C-band

FLC157XP 31.5 6 29.5 8.0 10 360 Amplifier

FSX017X 21.5 11 42 8.0 8 38

X-band
FSX027X 24.5 10 41 8.0 8 77
Amplifier
FLX257XV 33.5 7.5 31 10.0 10 600
FLK017XP 20.5 8 26 14.5 10 36
FLK027XP 24 7 32 14.5 10 60
FLK027XV 24 7 32 14.5 10 60 Ku-band
FLK057XV 27 7 32 14.5 10 120 Amplifier

FLK107XV 30 6.5 31 14.5 10 240

FLK207XV 32.5 6 27 14.5 10 480
X: Conventional Chip, XP: PHS (Plated Heat Sink), XV: Via Hole PHS

SUMITOMO ELECTRIC 18
Power GaAs

Internally Matched High Power GaAs FETs

FLM/ELM/SLM Series are internally matched power GaAs FETs developed for radio link
applications which require high power, high gain, and low distortion in a 50Ω system that are
available from 2GHz to 15.3GHz frequency bands.

PS-series are cost effective products of plastic package which can be surface-mounted to
save assembly cost.
These products can be provided in both taping-reel and Tray.

Naming Rules
Features: PS series ELM 7785-4 P S T
• Input/Output Internally Matched Taping
• Plastic Package for SMT Applications (I2C) Surface Mount
• High Gain Plastic
• High Output Power Output Power (W)
• High PAE Frequency (ex. 7785: 7.7 to 8.5GHz)
• Frequency Bands Internally Matched Power FETs
(5.9 to 6.4GHz, 6.4 to 7.2GHz, 7.1 to 7.9GHz, 7.7 to 8.5GHz)

Product Photo
I2C Package

Features Naming Rules

• Input/Output Internally Matched Zin/Zout = 50Ω
ELM 7785-60 F
• Hermetic Metal Wall Package
Series Name
• High Gain Output Power (W)
• High Output Power (Up to 60W) Frequency (ex. 7785: 7.7 to 8.5GHz)
• Low Distortion Internally Matched Power FETs
• Covers Wide Band

Product Photo
IA Package IB Package IK/I1K Package M2A Package

19 SUMITOMO ELECTRIC
Internally Matched High Power GaAs FET Lineup
I2C Package IA Package IB Package IK/I1K Package M2A Package

48
ELM7785-60F
FLM5964-45F
47 FLM4450-45F FLM7785-45F
FLM5359-45F

FLM5359-35F
46 FLM5053-35F FLM5964-35F ELM7785-35F

FLM2023L-30F FLM4450-25F
FLM5964-25F
45 FLM3742-25F FLM5053-25F
ELM1314-30F/001
FLM6472-25F

FLM3439-25F FLM5359-25F SLM5868-25F FLM0910-25F

ELM1414-30F/001
44 FLM3742-18F
FLM5053-18F FLM5359-18F
Output Power at 1dB Gain Compression Level [dBm]

FLM3439-18F FLM7179-18F
FLM4450-18F FLM5964-18F
FLM3135-18F ELM7179-16F FLM1011-20F
FLM6472-18F
ELM7785-16F
43 FLM1314-18F
ELM6472-16F FLM7785-18F
FLM2527L-20F ELM5964-16F
FLM8596-15F FLM1011-15F
FLM5053-12F FLM6472-12F FLM1414-15F
42 FLM3135-12F FLM4450-12F FLM5964-12F FLM7179-12F
FLM7785-12F FLM0910-15F
FLM1314-12F
FLM3439-12F FLM5359-12F FLM5972-12F FLM7185-12F
41 FLM3742-12F FLM8596-12F
ELM5964-10F ELM6472-10F FLM1414-12F
FLM5964-8F
FLM4450-8F FLM5359-8F ELM7179-10F ELM7785-10F FLM1011-12F FLM1213-12F
FLM0910-12F
40 FLM3742-8F FLM5053-8F FLM6472-8F
FLM7179-8F
FLM7785-8F ELM1314-9F

FLM8596-8F FLM1213-8F FLM1314-8F

FLM3135-8F ELM5964-7PS ELM7179-7PS
39 FLM3439-8F FLM5972-8F
ELM7785-7PS FLM1011-8F FLM1415-8F
ELM6472-7PS FLM0910-8F FLM1414-8F
FLM5964-6F FLM7785-6F
38 FLM6472-6F FLM1314-6F
FLM7179-6F FLM7185-6F FLM1414-6F
FLM5964-4F FLM1011-6F
FLM4450-4F FLM7179-4F FLM1213-6F
37 FLM3742-4F FLM5972-4F FLM6472-4F
FLM7785-4F
FLM1415-6F
FLM0910-4F FLM1213-4F FLM1414-4F
ELM7785-4PS
FLM3439-4F
36
FLM5053-4F FLM1011-4F FLM1415-4F
FLM3135-4F FLM8596-4F
FLM5359-4F ELM7179-4PS FLM1314-3F
FLM0910-3F
35 ELM5964-4PS FLM1414-3F
ELM6472-4PS FLM1011-3F

FLM1415-3F
34

2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
Frequency [GHz]

Specifications (PS series)

SCL
Freq. lM3 P1dB G1dB ηadd VDS IDS (DC) lDS(RF) Rth
Part Number Pout Package Feature
(GHz) (dBc) (dBm) (dB) (%) (V) (mA) (mA) (°C/W)
(dBm)
ELM5964-4PS 5.9-6.4 -43 25.5 36 11.5 37 10 1100 1100 4.5
ELM5964-7PS 5.9-6.4 -45 28 39 11 36 10 2200 2200 2.5
ELM6472-4PS 6.4-7.2 -43 25.5 36 11 36 10 1100 1100 4.5
• Internally
ELM6472-7PS 6.4-7.2 -43 28 39 10.5 35 10 2200 2200 2.5 matched
I2C • Optimized for
ELM7179-4PS 7.1-7.9 -43 25.5 36 10.5 35 10 1100 1100 4.5 each frequency
band
ELM7179-7PS 7.1-7.9 -43 28 39 10 34 10 2200 2200 2.5
ELM7785-4PS 7.7-8.5 -43 25.5 36 10 34 10 1100 1100 4.5
ELM7785-7PS 7.7-8.5 -43 28 39 9.5 33 10 2200 2200 2.5
Note: Tc(op)=+25°C

SUMITOMO ELECTRIC 20
Power GaAs

Internally Matched High Power GaAs FETs

Specifications
SCL
Freq. lM3 P1dB G1dB ηadd VDS IDS (DC) lDS(RF) Rth
Part Number Pout Package Feature
(GHz) (dBc) (dBm) (dB) (%) (V) (mA) (mA) (°C/W)
(dBm)
FLM2527L-20F 2.5-2.7 - - 43 11 38 10 4800 4800 1.6 IK
FLM3135-4F 3.1-3.5 -45 25.5 36.5 12 38 10 1100 1100 5
IB
FLM3135-8F 3.1-3.5 -45 28.5 39.5 11 37 10 2200 2200 3
FLM3135-12F 3.1-3.5 -45 30.5 41.5 11.5 40 10 3250 3250 2.3
IK
FLM3135-18F 3.1-3.5 -45 32 43 10.5 37 10 4800 4800 1.6
FLM3439-4F 3.4-3.9 -46 25.5 36.5 12 38 10 1100 1100 5
IB
FLM3439-8F 3.4-3.9 -46 28.5 39.5 11 37 10 2200 2200 3
FLM3439-12F 3.4-3.9 -46 30.5 41.5 11.5 40 10 3250 3250 2.3
FLM3439-18F 3.4-3.9 -46 32 43 10.5 37 10 4800 4800 1.6 IK
FLM3439-25F 3.4-3.9 -46 33.5 44.5 10.5 41 10 6200 6200 1.4
FLM3742-4F 3.7-4.2 -46 25.5 36.5 12 38 10 1100 1100 5
IB
FLM3742-8F 3.7-4.2 -46 28.5 39.5 11 37 10 2200 2200 3
FLM3742-12F 3.7-4.2 -46 30.5 41.5 11.5 40 10 3250 3250 2.3
FLM3742-18F 3.7-4.2 -46 32 43 10.5 37 10 4800 4800 1.6 IK
FLM3742-25F 3.7-4.2 -46 33.5 44.5 10.5 41 10 6200 6200 1.4
FLM4450-4F 4.4-5.0 -46 25.5 36.5 11 37 10 1100 1100 5
IB
FLM4450-8F 4.4-5.0 -46 28.5 39.5 10 36 10 2200 2200 3
FLM4450-12F 4.4-5.0 -46 30.5 41.5 10.5 39 10 3250 3250 2.3
FLM4450-18F 4.4-5.0 -46 32 43 9.5 36 10 4800 4800 1.6
IK
FLM4450-25F 4.4-5.0 -46 33.5 44.5 9.5 40 10 6200 6200 1.4
FLM4450-45F 4.4-5.0 - - 46.5 10 41 12 7000 8000 1.1
FLM5053-4F 5.0-5.3 -46 25.5 36.5 10.5 37 10 1100 1100 5
IB
FLM5053-8F 5.0-5.3 -46 28.5 39.5 9.5 36 10 2200 2200 3
FLM5053-12F 5.0-5.3 -46 30.5 41.5 9.5 38 10 3250 3250 2.3
FLM5053-18F 5.0-5.3 -46 32 43 8.5 35 10 4800 4800 1.6
IK • 50Ω internally
FLM5053-25F 5.0-5.3 -46 33.5 44.5 8.5 39 10 6200 6200 1.4
FLM5053-35F 5.0-5.3 -45 34.5 45.5 8 35 10 8000 8000 1.1 matched
FLM5359-4F 5.3-5.9 -46 25.5 36.5 10.5 37 10 1100 1100 5 • No external
IB
FLM5359-8F 5.3-5.9 -46 28.5 39.5 9.5 36 10 2200 2200 3 matching
FLM5359-12F 5.3-5.9 -46 30.5 41.5 9.5 38 10 3250 3250 2.3 • Optimized
FLM5359-18F 5.3-5.9 -46 32 43 8.5 35 10 4800 4800 1.6 for each
FLM5359-25F 5.3-5.9 -46 33.5 44.5 8.5 39 10 6200 6200 1.4 IK frequency
FLM5359-35F 5.3-5.9 - - 45.5 9 35 10 8500 8500 1.1 band
FLM5359-45F 5.3-5.9 - - 46.5 8.5 36 12 8000 8500 0.8
FLM5964-4F/001 5.85-6.75 -45 25.5 36.5 9.5 36 10 1100 1100 5
IB
FLM5964-8F/001 5.85-6.75 -45 28.5 39.5 9 35 10 2200 2200 3
FLM5964-12F/001 5.85-6.75 -45 30.5 41.5 9 37 10 3250 3250 2.3
IK
FLM5964-18F/001 5.85-6.75 -45 31.5 42.5 9 35 10 4400 4400 1.6
FLM5964-4F 5.9-6.4 -46 25.5 36.5 10 37 10 1100 1100 5
FLM5964-6F 5.9-6.4 -46 27.5 38.5 10 37 10 1625 1625 4 IB
FLM5964-8F 5.9-6.4 -46 28.5 39.5 10 37 10 2200 2200 3
ELM5964-10F 5.9-6.4 -46 29 40.5 10 39 10 2600 2600 3
FLM5964-12F 5.9-6.4 -46 30.5 41.5 10 37 10 3250 3250 2.3
ELM5964-16F 5.9-6.4 -45 31.5 42.5 10 40 10 2800 4000 2.7
FLM5964-18F 5.9-6.4 -46 32 43 10 37 10 4875 4875 1.6 IK
FLM5964-25F 5.9-6.4 -46 33.5 44.5 10 37 10 6500 6500 1.4
FLM5964-35F 5.9-6.4 -40 35 45.5 9 36 10 8000 8500 1.1
FLM5964-45F 5.9-6.4 -40 35.5 47 8.5 39 10 8000 11000 1.1
FLM5972-4F 5.9-7.2 -45 25.5 36.5 9.5 36 10 1100 1100 5
IB
FLM5972-8F 5.9-7.2 -45 28 39 8.5 31 10 2200 2200 3
FLM5972-12F 5.9-7.2 -45 30.5 41.5 9.5 37 10 3250 3250 2.3 IK
FLM6472-4F 6.4-7.2 -46 25.5 36.5 9.5 36 10 1100 1100 5
FLM6472-6F 6.4-7.2 -46 27.5 38.5 9.5 37 10 1625 1625 4 IB
FLM6472-8F 6.4-7.2 -46 28.5 39.5 9.5 36 10 2200 2200 3
ELM6472-10F 6.4-7.2 -46 29 40.5 9.5 36 10 2600 2600 3
FLM6472-12F 6.4-7.2 -46 30.5 41.5 9.5 37 10 3250 3250 2.3
IK
ELM6472-16F 6.4-7.2 -45 31.5 42.5 9.5 40 10 2800 4000 2.7
FLM6472-18F 6.4-7.2 -46 32 43 9.5 37 10 4875 4875 1.6
Note: Tc (op) = +25°C IM3: 3rd Order Intermodulation Distortion

21 SUMITOMO ELECTRIC
Specifications
SCL
Freq. lM3 P1dB G1dB ηadd VDS IDS (DC) lDS(RF) Rth
Part Number Pout Package Feature
(GHz) (dBc) (dBm) (dB) (%) (V) (mA) (mA) (°C/W)
(dBm)
FLM6472-25F 6.4-7.2 -46 33.5 44.5 9.5 38 10 6500 6500 1.4 IK
FLM7179-4F 7.1-7.9 -46 25.5 36.5 9 35 10 1100 1100 5
FLM7179-6F 7.1-7.9 -46 27.5 38.5 9 34 10 1625 1625 4 IB
FLM7179-8F 7.1-7.9 -46 28.5 39.5 9 35 10 2200 2200 3
ELM7179-10F 7.1-7.9 -46 29 40.5 9 38 10 2600 2600 3
FLM7179-12F 7.1-7.9 -46 30.5 41.5 9 38 10 3250 3250 2.3
IK
ELM7179-16F 7.1-7.9 -43 31.5 42.5 8.5 38 10 2800 4000 2.7
FLM7179-18F 7.1-7.9 -46 32 42.5 8 30 10 4875 4875 1.6
FLM7185-6F 7.1-8.5 -45 27 38 8 30 10 1625 1625 4 IB
FLM7185-12F 7.1-8.5 -45 30 41 8 30 10 3500 3500 2.3 IK
FLM7785-4F 7.7-8.5 -46 25.5 36.5 8.5 35 10 1100 1100 5
FLM7785-6F 7.7-8.5 -46 27.5 38.5 8.5 31 10 1750 1750 4 IB
FLM7785-8F 7.7-8.5 -46 28.5 39.5 8.5 34 10 2200 2200 3
ELM7785-10F 7.7-8.5 -46 29 40.5 8.5 37 10 2600 2600 3
FLM7785-12F 7.7-8.5 -46 30.5 41.5 8.5 34 10 3500 3500 2.3
ELM7785-16F 7.7-8.5 -43 31.5 42.5 8 37 10 2800 4000 2.7
IK
FLM7785-18F 7.7-8.5 -45 31.5 42.5 7 29 10 4700 4700 1.6
ELM7785-35F 7.7-8.5 - - 45.5 8.5 35 10 8000 8500 1.1
FLM7785-45F 7.7-8.5 - - 46.5 7 32.5 10 8000 11000 1.1
ELM7785-60F 7.7-8.5 - - 48 7 37 10 9500 14500 0.8 I1K
FLM8596-4F 8.5-9.6 -45 25.5 36 7.5 29 10 1100 1100 5 IA
FLM8596-8F 8.5-9.6 -45 28.5 39 7.5 29 10 2200 2200 3
FLM8596-12F 8.5-9.6 -45 29.5 40.5 7.5 25 10 3600 3600 2.3 IB
FLM8596-15F 8.5-9.6 - - 42 7.5 32 10 4000 4000 2.3
FLM0910-3F 9.5-10.5 -46 24 35 7.5 29 10 900 900 5
IA
FLM0910-4F 9.5-10.5 -46 25.5 36 7.5 29 10 1100 1100 5
• 50Ω internally
FLM0910-8F 9.5-10.5 -46 28.5 39 7.5 29 10 2200 2200 3
matched
FLM0910-12F 9.5-10.5 - - 40.5 7 25 10 3500 3500 2.3 IB
• No external
FLM0910-15F 9.5-10.5 - - 42 7.5 32 10 4000 4000 2.3
matching
FLM0910-25F 9.5-10.5 - - 44 7 30 10 6500 6500 1.4 IK
• Optimized
FLM1011-3F 10.7-11.7 -46 24 35 7.5 29 10 900 900 5
for each
FLM1011-4F 10.7-11.7 -46 25.5 36 7 29 10 1100 1100 5 IA
FLM1011-6F 10.7-11.7 -49 25 37.5 7.5 28 10 1800 1800 4 frequency
FLM1011-8F 10.7-11.7 -46 28.5 39 7 29 10 2200 2200 3 band
FLM1011-12F 10.7-11.7 -45 29.5 40.5 6 25 10 3600 3600 2.3 IB
FLM1011-15F 10.7-11.7 -45 30 42 7 31 10 4000 4000 2.3
FLM1011-20F 10.7-11.7 -45 31 43 7 27 10 6000 6000 1.4 IK
FLM1213-4F 12.7-13.2 -46 25.5 36 6.5 28 10 1100 1100 5
FLM1213-6F 12.7-13.2 -49 25 37.5 7 28 10 1650 1650 4 IA
FLM1213-8F 12.7-13.2 -46 28.5 39 6.5 28 10 2200 2200 3
FLM1213-12F 12.7-13.2 -45 28 40.5 5.5 24 10 3300 3300 2.3 IB
FLM1314-3F 13.75-14.5 -45 24 35 5.5 27 10 900 900 5
FLM1314-6F 13.75-14.5 -45 26.5 37.5 5.5 22 10 1800 1800 4
IA
FLM1314-8F 13.75-14.5 -45 28 39 6 27 10 2400 2400 2.8
ELM1314-9F 13.75-14.5 -30 33 39.5 6 30 10 1750 2400 3.5
FLM1314-12F 13.75-14.5 -45 29 41 6 23 10 4200 4200 1.8
IB
FLM1314-18F 13.75-14.5 -30 36 42.5 6 27 10 5000 5000 1.8
ELM1314-30F/001 13.75-14.5 -30 38 44.5 5.5 22 10 7000 9000 1 M2A
FLM1414-3F 14.0-14.5 -46 24 35 6.5 27 10 900 900 5
FLM1414-4F 14.0-14.5 -46 25.5 36 6 27 10 1100 1100 5
IA
FLM1414-6F 14.0-14.5 -46 26.5 37.5 6.5 24 10 1800 1800 4
FLM1414-8F 14.0-14.5 -46 28.5 39 6 27 10 2200 2200 3
FLM1414-12F 14.0-14.5 - - 41 6 23 10 3600 3600 1.8
IB
FLM1414-15F 14.0-14.5 -45 30 42 6 26 10 4200 4200 1.8
ELM1414-30F/001 14.0-14.5 -30 38 44.5 6 22 10 7000 9000 1 M2A
FLM1415-3F 14.5-15.3 -45 23.5 34.5 5.5 23 10 900 900 5
FLM1415-4F 14.5-15.3 - - 36 5.5 26 10 1100 1100 5
IA
FLM1415-6F 14.5-15.3 -45 26 37 5.5 20 10 1800 1800 4
FLM1415-8F 14.5-15.3 - - 39 5 25 10 2200 2200 3
Note: Tc (op) = +25°C IM3: 3rd Order Intermodulation Distortion

SUMITOMO ELECTRIC 22
Power GaAs

High Power GaAs FETs

Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile
Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic
packaged devices are under development for cost driven systems.

Features Naming Rules

• High Output Power: Up to 40W
FL L 300 IL-2
• High Gain
• Operating Voltage: 10V, 12V Pre Matching Frequency
• Proven Reliability Package Code
Power
Frequency Band
Large Signal

L-Band, S-Band High Output GaAs FET Lineup

100

FLL300IL-1 FLL300IL-2 FLL300IL-3

Output Power [W]

FLL200IB-1 FLL200IB-2 FLL200IB-3

10
Discrete FETs FLL120MK
FLL57MK

Discrete FETs FLL357ME FLU35XM FLU35ZME1

SMT
FLL177ME FLU17XM FLU17ZME1
Devices
1 FLL107ME FLU10XM FLU10ZME1

0.1

1.0 1.5 2.0 2.5 3.0 3.5

Frequency [GHz]

Product Photo
XM Package ZM Package ME Package MK Package IB Package

23 SUMITOMO ELECTRIC
Specifications
Specified
Freq. P1dB G1dB ηadd VDS lDS(DC) Rth
Part Number Series Freq. Package
Band (dBm) (dB) (%) (V) (mA) (°C/W)
(GHz)
FLU10XM L FLU 29.5 14.5 47 2 10 180 25 XM
FLU10ZME1 L FLU 29.5 13 46 2 10 180 15 ZM
FLU17XM L FLU 32.5 12.5 46 2 10 360 15 XM
FLU17ZME1 L FLU 32.5 12.5 45 2 10 360 12 ZM
FLU35XM L FLU 35.5 12.5 46 2 10 720 7.5 XM
FLU35ZME1 L FLU 35.5 11.5 45 2 10 720 5 ZM
FLL107ME L FLL 29.5 13.5 47 2.3 10 180 25
FLL177ME L FLL 32.5 12.5 46 2.3 10 360 15 ME
FLL357ME L FLL 35.5 11.5 46 2.3 10 720 7.5
FLL57MK L FLL 36.0 11.5 37 2.3 10 990 6.2
MK
FLL120MK L FLL 40.0 10 40 2.3 10 2200 3.3
FLL200IB-1 L FLL 42.5 13 35 1.5 10 4800 1.6
FLL200IB-2 L FLL 42.5 11 34 2.3 10 4800 1.6 IB
FLL200IB-3 L FLL 42.5 11 34 2.6 10 4800 1.6
FLL300IL-1 L FLL 44.5 13 45 0.9 10 6000 1
FLL300IL-2 L FLL 44.5 12 44 1.8 10 6000 1 IL
FLL300IL-3 L FLL 44.5 10 42 2.6 10 6000 1
FLC057WG C FLC 27.0 9 38 8 10 120 27 WG
FLC097WF C FLC 28.8 8.5 35 6 10 180 25 WF
FLC107WG C FLC 30.0 8 36 8 10 240 16 WG
FLC167WF C FLC 31.8 7.5 35 6 10 360 15 WF
*
FLC257MH-6 C FLC 34.0 9 36 6.4 10 600 8
*
FLC257MH-8 C FLC 34.0 8 35 8.5 10 600 8
*
MH
FLX107MH-12 X FLX 30.0 7.5 33 12.5 10 240 15
FLX207MH-12* X FLX 32.5 7 28 12.5 10 480 10
FLK017WF Ku FLK 20.5 7.5 26 14.5 10 36 65 WF
FLK027WG　 Ku FLK 24.0 7 32 14.5 10 60 40
WG
FLK057WG Ku FLK 27.0 7 32 14.5 10 120 20
FLK107MH-14* Ku FLK 30.0 6.5 31 14.5 10 240 15 MH
*: Partially Input/Output Matched

Product Photo
IL Package WF Package MH Package WG Package

SUMITOMO ELECTRIC 24
Small Signal

Small Signal GaAs FETs

FSU/FSX series are GaAs FETs that are designed for medium output power amplifier and
oscillator applications with a wide dynamic range up to X-band frequencies. Tape and reel is
available for both LP/LG packages.

Features Naming Rules

• Medium Power: P1dB = 15 to 24.5dBm
• High Gain: G1dB = 8 to 19dB FS X 017 LG
Package Code
• High Reliability
Number
• Hermetic Metal/Ceramic Packages (WF/LG)
Frequency Band
Small Signal

Specifications
Measurement Measurement
Conditions 1 Conditions 2
P1dB G1dB NF Rth
Part Number Package Feature
(dBm) (dB) Specified IDS (dB) (°C/W) Specified IDS
VDS VDS
Freq. (DC) Freq. (DC)
(V) (V)
(GHz) (mA) (GHz) (mA)
FSU01LG 20 19 2 6 40 0.5 18.5 2 3 10
LG *
FSU02LG 23 17 2 6 80 1.5 17.5 2 3 20
FSX017WF 21.5 11 8 8 39 2.5 10.5 8 3 10 Medium Power
WF
FSX027WF 24.5 10 8 8 77 2.5 9.5 8 3 30
FSX017LG 16 8 12 4 30 - - - - - LG *
*: FSU01LG, FSU02LG, FSX017LG are all in LG-pkg with short lead.
Note: Tc (op) = +25°C

Product Photo
LG Package WF Package

25 SUMITOMO ELECTRIC
 Packages

I2C I2D I2F IA IB

IBK IK IL IV I1K

LG/LP M2A ME MH MK

V1B V1D VF VU WF

WG XM Z2D ZB ZV

Packages

I2C I2D
15
5 1.5

2.5 Min.
0.6
4
(1)
1
0.5
1.3 1.6 (1)
(2) INDEX

13.2 ±0.2
2

11.2 ±0.3
(2)

2.7
14.9

10.2
9.6
8.9

12.9

(0.933)
0.5

(0.75)
(4)
0.8 0.8
(3) 0.1 typ. 3-(R0.35)

2.5 Min.
(3) 2.4
0.2typ. (0.15)
0.6 0.6 17
21
13
12.8
11.5 ±0.3

5.0Max.
11.25

1 : Gate
1 : Gate

1.4
2 : Source
3 : Drain 2 : Source (Flange)
4 : Source 3 : Drain
Tolerance : ±0.15 Tolerance : ±0.15
Unit : mm Unit : mm

I2F IA
2.8 ±0.5

26.4 ±0.2
0.6
2.4 16.5
4- (1)
R1
.3

3 ±0.5
(1)
8 ±0.15

(4) (2)

9.7 ±0.2
15.5 ±0.2
17.4 ±0.2

8.5
2.5
25
2-R1.
(4) (2)
3 ±0.5

(3) 1.8
0.15 typ. (3)
2.8 ±0.5

23.1 ±0.2 0.5 0.1typ.

13
3.2Max.
1.15 ±0.2

8.1
18.6 ±0.2
1 : Gate 1 : Gate
5.0 MAX.

2 : Source 2 : Source
3 : Drain 3 : Drain
0.1Max.

4 : Source 9 4 : Source
1.6 ±0.2

Tolerance : ±0.15 Tolerance : ±0.15

Unit : mm Unit : mm

IB IBK

21 ±0.2
21
3 ±0.5

(1)
3 ±0.5

(1)

2-R1.6
12.9 ±0.2

2-R1.6
12.9 ±0.2

11.3 ±0.2

(4) (2)
6.45 ±0.2

(4) (2)
3 ±0.5
3 ±0.5

(3) 2.6
(3) 2.6
0.1 typ.
0.1 typ. 0.6
0.6
17 ±0.2
17

10.7 ±0.2
5.2Max.
0.2Max.

1.6 ±0.2

10.7
5.0Max.

1 : Gate 1 : Gate
2 : Source 2 : Source
3 : Drain 3 : Drain
1.6 ±0.2

4 : Source 4 : Source
12 Tolerance : ±0.15 Tolerance : ±0.15
Unit : mm Unit : mm

27 SUMITOMO ELECTRIC
 IK IL

2.6 ±0.2

3.0 ±0.5
24.0 ±0.2
0.1 typ.
24 ±0.2

3 ±0.5
(1) (1)
2.6

17.4 ±0.2

8.0 ±0.2

17.4 ±0.2
8

(4) (2)

15.5
(4) (2)

.3 .2
R1 ±0
4- .3
R1
4-
3 ±0.5

(3) 2.4 2.4 ±0.2

(3)
0.6
0.1 ±0.05
H

3.0 ±0.5
20.4 ±0.2
1.0
4.7max.
1 : Gate
16.4 ±0.2 2 : Source
14.9 3 : Drain
16.2 ±0.2
4 : Source

1.9 ±0.2
Tolerance : ±0.15
1 : Gate Unit : mm
2 : Source(Flange)
3 : Drain Metal Ceramic
1.4 ±0.2

4 : Source(Flange) H 3.7mm max. 5.5mm max.

Tolerance : ±0.15 20.4 ±0.2
Unit : mm

IV I1K
24 ±0.2

3 ±0.5
24.0 ±0.5 (1)
3.0 ±0.5
2.6 ±0.2

20.4 ±0.3
0.1 typ.
2.6

(1)

17.4 ±0.2
8

15.5
(4) (2)
8.0 ±0.2

17.4 ±0.3

0.93 ±0.2
0.75 ±0.3

.3
R1
(4) (2) 4-

3 ±0.5
(3) 2.4
.3 W
R1 X
4-
20.4 ±0.2
H
0 .5) 1.9 ±0.2
-R (3)
(12 0.25 ±0.2 1 : Gate
2 : Source(Flange)
3.0 ±0.5

2-1.5 5.0max.
14.9 3 : Drain
4 : Source(Flange)
14.9 ±0.2 Tolerance : ±0.15
Unit : mm
14.7 ±0.2
min typ max
1 : Gate H 4.1 4.3 4.7
1.4 ±0.2

2 : Source(Flange)
1.4

PKG W X
3 : Drain
IK 0.6 0.1 typ.
4 : Source(Flange)
I1K* 0.7 0.2 typ.
Tolerance : ±0.15
Unit : mm *：ELM7785-60F

LG/LP (Shortlead) LG/LP

3.80 ±0.30
1.78
4.78 ±0.5

(1) 1.5 ±0.3 1.78 1.5 ±0.3

3.80 ±0.30
1.00

1.78

1.5 ±0.3

(1)
(4) (2)

(3)
4.78 ±0.5
1.3max.

0.50
1.78
1.0
0.10 typ.

(2)
(4)
1.5 ±0.3

(3)
.2
°)

(45
(0.60)

0
(45

(0.25)

0.5
(0.15)

1.3maX.
°)

1 : Gate
2 : Source
(0.90)

3 : Drain 1 : Gate
4 : Source 2 : Source
°) Metalize 3 : Drain
0.1 typ.

(45 4 : Source
Tolerance : ±0.15
(0.8) Unit : mm Tolerance : ±0.15
Unit : mm

SUMITOMO ELECTRIC 28
Packages

M2A ME

2.5 ±0.5
24.0 ±0.5
0.1typ.
20.4 ±0.3
16.0

(1)

4.0 ±0.50
12.0

5.0 ±0.2

2-
ø2
.2
(1)
8.0 ±0.2

17.4 ±0.3
15.5 ±0.2

(4) (2)

+0.01
5.0 -0.15
(4) (2)

1.65
(3)
1.3

(3)
R
4-

0.6 0.1typ.

4.0 ±0.50
2.5 ±0.5

2.5 ±0.25
1.0
14.9
7.0max.

1 : Gate 1 : Gate
2 : Source

4.0max.
2 : Source
3 : Drain 3 : Drain
4 : Source
1.4 ±0.2

1.2
4 : Source
Tolerance : ±0.15 Tolerance : ±0.15
Unit : mm Unit : mm

MH MK

10.0±0.3 17.5 ±0.2

2.0 ±0.5

3.0 ±0.5
6.7 ±0.2 14.3 ±0.2
2-
ø1
.8
2-R (1)
1.2
(1) 5 ±0
.2

6.35 ±0.2

4.8
3.5
3.3

(4) (2)

(4) (2)
2.5 ±0.2

(3) 2.28 ±0.2

1.65 (3)
0.1typ.
3.0 ±0.5

0.5 1.0
2.0 ±0.5

3.5 ±0.3 0.1typ.

8.9
1.78

1 : Gate 1 : Gate
2 : Source（Flange） 2 : Source
2.8max.

4.5max.

3 : Drain 3 : Drain
1.0

4 : Source（Flange） 4 : Source
Tolerance : ±0.15 Tolerance : ±0.15
Unit : mm Unit : mm

V1B V1D
5.20
+0.05
0.25 -0.06
0.30 ±0.1

0.30 ±0.1 INDEX 9.9

(16) (15)(14)(13) (12) 5.2
0.3 ±0.1
+0.05
0.25 -0.06

(1)
0.3 ±0.1

(11) (20) (19)(18)(17) (16)

(2) (10)
8.00
4.30

7.40
6.20

1.7

(1) (15)
(3) (2) (14)
(9)
4.3

7.4

7.4
6.2

(3) (13)
8

(4) (12)
(4)(5)(6)(7)(8) (5) (11)
0.35 ±0.1

7.86
9.90 (6) (7) (8) (9) (10)
10.50 8.26
9.9
10.5
0.15 ±0.05

A
1.5 MAX.

d 0.1 A
0.15 ±0.05
1.5MAX.

(9.9mm×7.4mm)
d 0.1 A A
3.90 1.425
1.05 (9.9mm×7.4mm)
0.85

1.425 4.00
0.75

1.05
5.80
1.35

1.50

5.8
1.35

5.91
Tolerance : ±0.15
6.86 Tolerance : ±0.15
1.5

6.31 Unit : mm
8.26 Unit : mm
7.26

29 SUMITOMO ELECTRIC
 VF VU
9.90

+0.05

0.15 +0.05

0.30 ±0.1
-0.04
0.25 -0.06
INDEX
17.78

13.46 (3) (4)

8.38

1.80 ±0.5
(2) (5)

8.00
4.80

7.40
6.70
6.40
4-C1.52 (1) (6)

(1) (2) (3)

8.26

1.5max.
6.63 10.50

6.63
8.33
2-R1.22

0.15 ±0.05
A

(6) (5) (4)

4-R

0.125typ. d 0.1 A
2.44
0

(9.9mm×7.4mm)
1.80 ±0.5

1.35 ±0.35
.50

1.02
4-0.50

1.05
2-0.30
H
W

6.30
0.30
0.51

0.70
1.20
Tolerance : ±0.15 5.91
0.50 0.50 Unit : mm
6.16
Ceramic Metal 7.86
H 3.0mm max. 2.4mm max. 8.66 Tolerance : ±0.15
W 7.88mm 7.75mm Unit : mm

WF WG

0.1typ.
8.5 ±0.2
2-ø1.6 ±0.1
2.5

3.3 ±0.5
(1)
1.0min

2-ø (1)
1.6
±0

2.5 ±0.15
.1

(2)
2.5

(4) (2)

3.3 ±0.5
(3) (3)
1.0min

0.8 ±0.1
0.5
2.5Max.
0.6 0.1typ. 2.8
2.5max.

1 : Gate
1 : Gate 2 : Source（Flange）
2 : Source（Flange） 6.1 ±0.1
3 : Drain
4 : Source（Flange）
0.8 ±0.1

6.1 ±0.1 3 : Drain

Tolerance : ±0.15 8.5 ±0.2 Tolerance : ±0.15
Unit : mm Unit : mm

XM Z2D

0.5 4.4 0.5

3.6 1

INDEX
(1)
0.7

(1) (6) (3) (4)

0.8
5.31
6.5
3.35
2.0

6.3

3.8

(2) (5) (2) (5)

(7) (7)
(4) (2)
(3) (4) (1) (6)
1.6

(3)

7 0.25 MAX.
0.7 0.15typ.
4.0 1.0MAX.
4.2 ±0.1
1.7 ±0.2
<Single Type> <Twin Type>
1 : NC 1 : Gate1
2 : Gate 2 : NC
3 : NC 3 : Gate2
1 : Gate 4 : NC 4 : Drain2
2 : Source 5 : Drain 5 : NC
3 : Drain 6 : NC 6 : Drain1
4 : Source 7 : Source 7 : Source
Tolerance : ±0.15 Tolerance : ±0.15
Unit : mm Unit : mm

SUMITOMO ELECTRIC 30
Packages

ZB ZV

PIN#1
4.0 0.8MAX. P0.5×5=2.5
5.0 0.8MAX. P0.65×4=2.6
IDENTIFIER PIN#1 PIN#1
PIN#1
IDENTIFIER IDENTIFIER
IDENTIFIER
(16) (17) (18) (19) (20) (19) (20)(21)(22)(23) (24)

(1) (18) (1)

(15)
(2) (2)

P0.65×4=2.6
(14) (17)

P0.5×5=2.5
(16) (3)

20-0.26
5.0

3.2

(13) (3)

4.0

2.5

24-0.22
(15) (4)
(12) (4)
(14) (5)
(11) (5)
(13) (6)

(10) (9) (8) (7) (6) (12) (11) (10) (9) (8) (7)
20-0.5
3.2 24-0.4
2.5

Tolerance : ±0.15
Tolerance : ±0.15
Unit : mm
Unit : mm

31 SUMITOMO ELECTRIC
Sealing Rules
■ Year/Month code

Year 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017 2018 2019 2020

Code P R S T U V W X Y Z A B C

Note: Code letter is cycling 25 alphabet without Q.

Month 1 2 3 4 5 6 7 8 9 10 11 12

Code H M N P R S T U W X Y Z

10
RP Month
Year
S GN 2 7 2 9
600 H - R

Note:
Year/Month code consist of two digit alphabet shown at the above table.
(e.g. “RP” stands for the device is manufactured in year 2009 (Year code “R”) and April (Month code “P”). See the above table.)

■ Year/Week code

30

5964- 4 P S
08 3 8
Week
Year

Note:
Year/week code consist of four digit number. The first two digits are last two digits of the year and last two digits show the week code
following European International Standard.
(e.g. “0838” stands for the device is manufactured in year 2008, week 38. The week has first Thursday in the year is defined as week 1.)

SUMITOMO ELECTRIC 32
Creating Value for Customers

Corporate Quality Assurance

Sumitomo Electric strives to achieve the highest quality and reliability performance on
all the products it supplies. This is accomplished through a systemic approach that
emphasizes quality at every stage of product development through the manufacturing
process. Quality is built into the product from design to wafer fabrication, test, and
assembly. Sumitomo Electric has a Quality Management System that is certified to
ISO9000 (ISO9001: 2008) and Aerospace Quality Management System JIS Q 9100.
This system assures customers the highest quality product with long term reliability
required for their applications.

Quality Management
ISO9001 Record
Sep. 1993
ISO9002 (Fujitsu Quantum Devices)
Nov. 1998
ISO9001
Sep. 2003
ISO9001: 2000
Apr. 2004
Eudyna Device Inc.
Oct. 2004
Expansion to Yokohama Factory
Oct. 2005
Expansion to Eudyna Microwave Assembly
Sep. 2009
ISO9001: 2008 (Sumitomo Electric Device
Innovations, Inc.)
Jul. 2010 ISO9001: 2008 Revision
Sep. 2015 ISO9001: 2008 Renewal

JIS Q 9100(AS9100, prEN9100)Record

Aug. 2010 AS9100 (JIS Q 9100): 2004
Jan. 2012 AS9100 (JIS Q 9100): 2009
OASIS Identification Number: 6131088186
Aug. 2016 AS9100 (JIS Q 9100): 2009 Renewal
OASIS Identification Number: 6131088186

Environmental Management
ISO14001 Record
Aug. 1998 ISO14001
Aug. 2004 Expansion to Eudyna Microwave Assembly
(Kofu)
Aug. 2007 Expansion to Eudyna Microwave Assembly
(Matsushiro)
Aug. 2010 ISO14001: 2004 (Sumitomo Electric Device
Innovations, Inc.)
Aug. 2016 ISO14001: 2004 (Sumitomo Electric Device
Innovations, Inc.) Renewal

33 SUMITOMO ELECTRIC
For Safety, Observe the Following
Procedures Environmental Management
• Do not put this product into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or
chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or
swallowed.
• Respect all applicable laws of the country when discarding this product.
This product must be disposed in accordance with methods specified by applicable hazardous waste
procedures.

Any information, such as descriptions of a function and examples of application circuits, in this
document are presented solely as a reference for the purpose to show examples of operations and uses
of Sumitomo Electric semiconductor device(s); Sumitomo Electric does not warrant the proper
operation of the device(s) with respect to its use based on such information. When the user develops
equipment incorporating the device(s) based on such information, they must assume full responsibility
arising out of using such information. Sumitomo Electric assumes no liability for any damages
whatsoever arising out of the use of the information.

Any information in this document, including descriptions of function and schematic diagrams, shall not
be construed as a license for the use or exercise of any intellectual property right, such as patent right
or copyright, or any other right of Sumitomo Electric or any third party nor does Sumitomo Electric
warrant non-infringement of any third-party’s intellectual property right or other right by using such
information. Sumitomo Electric assumes no liability for any infringement of the intellectual property
rights or other rights of third parties which would result from the use of information contained herein.

The products described in this document are designed, developed and manufactured as contemplated
for general use, including, without limitation, ordinary industrial use, general office use, personal use, and
household use, but are not designed, developed and manufactured as contemplated (1) for use
accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious
effect to the public, and could lead directly to death, personal injury, severe physical damage or other
loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass
transport control, medical life support system, missile launch control in weapon system), or (2) for use
requiring extremely high reliability (i.e., submersible repeater and artificial satellite).
Please note that Sumitomo Electric will not be liable to the user and/or any third party for any claims or
damages arising from the aforementioned uses of the products.

Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage
or loss from such failures by incorporating safety design measures into your facility and equipment such
as redundancy, fire protection, and prevention of excessive current levels and other abnormal operating
conditions.

If any products described in this document represent goods or technologies subject to certain
restrictions on export under the Foreign Exchange and Foreign Trade Law of Japan, the prior
authorization of the Japanese government will be required for export of those products from Japan.

SUMITOMO ELECTRIC 34
Japan North America Europe
Sumitomo Electric Industries, Ltd. Sumitomo Electric Device Sumitomo Electric Europe, Ltd.
(Tokyo) Innovations USA 220 Centennial Park
Akasaka Center Building,1-3-13, 2355 Zanker Rd. Elstree WD6 3SL United Kingdom
Motoakasaka, Minato-ku,Tokyo San Jose, CA 95131, USA Tel: +(44)-208-953-81 18
107-8468, Japan Tel: (408) 232-9500 Fax: +(44)-208-953-8228
Tel: +81(3)-6406-2690 Fax: (408) 428-9111
Fax: +81(3)-6406-4041 www.sei-device.com (Italy Branch)
Viale Piero e Alberto Pirelli 6, 20126
(Osaka) Asia Milano, Italy
4-5-33, Kitahama, Chuo-ku, Osaka Sumitomo Electric Asia, Ltd. Tel: +39-024-9638601
541-0041, Japan Rm 2624-2637 Fax: +39-024-9638625
Tel: +81(6)-6220-4245 Sun Hung Kai Centre
Fax: +81(6)-6220-6231 30 Harbour Road
Wanchai, Hong Kong
Tel: +852-2576-0080
Fax: +852-2576-6412

ATTENTION
Information in this document is subject to change without notice.

EQ01(2018.1 1)