AN4381

Application note
Current sharing in parallel diodes

Introduction
The use of diodes in parallel is commonly found in power electronic design. An important
consideration for this practice is the current sharing between diodes due to the difference of
electrical characteristics. This application note highlights the cause of the behavior of
several diodes are connected in parallel. Some recommendations will be given to help the
designer to produce a safe design. An electro-thermal model is described which simulates
the current and junction temperature of each diode for given application conditions. This tool
is illustrated using an example.

July 2014 DocID025436 Rev 1 1/16

www.st.com 16
Contents AN4381

Contents

1 Current sharing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 The basics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.2 Thermal effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
1.2.1 Thermal effects due to the negative temperature coefficient of VF . . . . . . .4
1.2.2 Thermal effects due to the dependency of ⍺ VF versus VF . . . . . . . . . . . . . . .5

1.3 Worst case configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

1.4 VF and QRR of diodes connected in parallel . . . . . . . . . . . . . . . . . . . . . . . . 6
1.5 Considerations of maximum dispersion: ∆VFmax (I0, 25 °C) . . . . . . . . . . . 9
1.6 Layout recommendation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

2 Electro-thermal model of diodes in parallel . . . . . . . . . . . . . . . . . . . . . 11

2.1 DC Forward characteristic model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
2.2 Full system model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2.3 Simulation results . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2.4 Comments about simulation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

3 Conclusions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

4 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

2/16 DocID025436 Rev 1

AN4381 Current sharing

1 Current sharing

1.1 The basics

Consider a simple example of two 5 A, 600 V ultrafast diodes in a TO-220 package
(STTH5R06) connected in parallel and mounted on a common heat sink. Figure 1 shows
the forward voltage VF of two STTH5R06 diodes (D1 and D2) versus forward current IF at
different junction temperatures. Diodes D1 and D2 have a difference of forward voltage
equal to 550 mV at Tj1 = Tj2 = 25 °C. This reference value will be expressed as:
∆VF(5A, 25 °C) = 550 mV.
This system satisfies the equations:

Equation 1
IT(t) = IF1(t) + IF2(t)

Equation 2
VF1(t,IF1,Tj1) = VF2(t,IF2,Tj2)
In this first example IT(t) = 10 A = cst. For diode D1, having a lower forward voltage
characteristic than D2, IF1 will be higher than IF2. When Tj1 = Tj2 = 25 °C (for example when
the converter starts up) we get:

Equation 3
IF1 = 6.7 A, IF2 = 3.3 A (IT = 10 A)
and

Equation 4
VF1(6.7 A, 25 °C) = VF2(3.3 A, 25 °C) = 2.18 V

Figure 1. Two 5 A, 600 V ultrafast diodes (STTH5R06) connected in parallel

IF(A) D1(150°C) D1(125°C) D2(125°C) D1(25°C) D2(25°C)
12
I T= I F1 + I F2 =10A
10

IF1(t) IF2(t) I F1 =6.7A IF1=6.7A

8
IF1=6.1 A
IT(t)
D1 D2 ΔVF(5A,125 °C)=200mV
6
Tj1 VF1 Tj2 VF2
4
ΔVF(5A,25 °C)=550mV
IF2=3.9A
IF2 =3.3A IF2 =3.3A
2

VF(V)
0
0 0,5 1 1,5 2 2,5 3 3,5
1.25V
VF1(6.1A,125°C) = VF2 (3.9A,125°C)=1.33V VF1 (6.7A,25°C) = VF2(3.3A,25°C)=2.18V

(a) (b)

DocID025436 Rev 1 3/16

16
Current sharing AN4381

1.2 Thermal effects

Two thermal effects need to be considered. The first one due to the negative temperature
coefficient of VF is very well known. The second one, due to dependency of ⍺ VF on VF is
practically unknown.

1.2.1 Thermal effects due to the negative temperature coefficient of VF

Assume that in thermal steady state equilibrium the junction temperature of these two
diodes is equal to 125 °C. From Figure 1.b we can deduce:

Equation 5
IF1 = 6.1 A, IF2 = 3.9 A (IT = 10 A)
and

Equation 6
VF1(6.1 A, 125 °C) = VF2(3.9 A, 125 °C) = 1.33 V
For D1, having higher forward current than D2, Tj1 will be higher than Tj2. Assuming now
Tj1 = 150 °C and Tj2 = 125 °C we get:

Equation 7
IF1 = 6.7 A, IF2 = 3.3 A (IT = 10 A)
and

Equation 8
VF1(6.7 A, 150 °C) = VF2(3.3 A, 125 °C) = 1.25 V
The negative temperature coefficient of the forward voltage drop ( ⍺ VF < 0) increases the
current unbalance between each diode. It is practically true for every technology of diode
excepted for silicon carbide diodes for which ⍺ VF > 0 in the operating area. The negative
impact of this well-known thermal effect is in practice limited by the fact that all the diodes
are generally mounted on a common heat sink (see Figure 12). The case temperature being
approximately the same for each diode, the difference of junction temperature ∆Tj can be
determined by:

Equation 9
∆Tj = RTH(j-c)∆P
Where RTH(j-c) is the junction to case thermal resistance and ∆P the difference of power
losses between each diode. Generally ∆Tj is lower than 25 °C, limiting the current
unbalance due to the temperature.

4/16 DocID025436 Rev 1

AN4381 Current sharing

1.2.2 Thermal effects due to the dependency of ⍺ VF versus VF

The second thermal effect is linked to the dependency of temperature coefficient ⍺VF versus
forward voltage drop VF. Figure 1.b shows that diode D1, having a lower voltage drop than
D2, has at the same time, a lower absolute value of ⍺ VF. This law is confirmed by Figure 2
giving the relationship between ⍺ VF and VF for different STTH5R06. Each point
corresponds to one diode. ⍺ VF is measured for a forward current of 5 A.
This second thermal effect is favorable for current equilibrium and partially counteracts the
first thermal effect.

Figure 2. Dependency of ⍺ VF versus VF for STTH5R06

- VF (5A) (mV/ °C)

10,5

10,0

9,5

9,0

8,5

8,0

VF (V)
7,5
2 2,1 2,2 2,3 2,4 2,5

1.3 Worst case configuration

To produce a safe design it is important to consider the worst case situation represented in
Figure 3. D1 has the lower VF and diodes D2 to Dn have the higher VF. We will define by
∆VFmax(I0, 25 °C) the maximum forward voltage dispersion of all the diodes at 25 °C and at
current rating I0, for example I0 = 5 A for an STTH5R06. This configuration is defined by:
diode D1 with VF1(I0, 25 °C) and diodes D2 to Dn with:

Equation 10
VF2(I0, 25 °C) = VFn(I0, 25 °C) = VF1(I0, 25 °C) + ∆VFmax(I0, 25 °C)
At the thermal steady state equilibrium we now get:
IT(t) = IF1(t) + IF2(t) + … + IFn(t)
IF2(t) = … = IFn(t)
Tj1 > Tj2 … Tjn

DocID025436 Rev 1 5/16

16
Current sharing AN4381

Equation 11
VF1(IF1,Tj1) = VF2(IF2,Tj2) = … = VFn(IFn,Tjn)
Tj2 = … = Tjn

Figure 3. Worst case situation of n diodes connected in parallel

n-1 diodes with
same higher VF

IT

IF1(t) IF2(t) IFn-1(t) IFn(t)

D1 D2 Dn-1 Dn

Tj1 VF1 Tj2 VF2 Tjn-1 VFn-1 Tjn VFn

D1 with lower VF

To ensure a safe design, the more stressed diode (D1) has to work within its specified
limits in terms of junction temperature, rms current, and transient surge current capability.
The goal of the simulation tool presented in Section 2 is to address this question.

1.4 VF and QRR of diodes connected in parallel

We first compare the forward voltage characteristic of the two diodes D1 and D2 connected
in parallel with the case of two medium diodes also connected in parallel. Figure 4.a shows
again the forward characteristic of D1 and D2 with the corresponding medium characteristic.
Figure 4.b shows VF of D1 connected with D2 when Tj1 = Tj2 = 125 °C and when
Tj1 = 150 °C and Tj2 = 125 °C (∆Tj = 25 °C corresponding to the worst case with a common
heat sink) which can be compared with the two medium diodes at Tj1 = Tj2 = 125 °C. The
curves from Figure 4.b can be deduced from the curves of Figure 4.a. For example, VF at
8 A of D1 connected with D2 when and Tj1 = 150 °C and Tj2 = 125 °C is defined by:

Equation 12
VF1(5.3 A, 150 °C) = VF2(2.7 A, 125 °C) = 1.15 V
In this particular case, the resulting forward characteristic of the 2 medium diodes is
approximately the same as for D1 connected with D2 at Tj1 = Tj2 = 125 °C but is higher
when Tj1 = 150 °C and Tj2 = 125 °C.

6/16 DocID025436 Rev 1

AN4381 Current sharing

Figure 4. Worst case situation of n diodes connected in parallel

D1 with D2 D1 with D2
IF(A) TJD1 =150°C TJD2 =125°C TJD1 =TJD2 =125°C
D1(125°C) D1(25°C) 16
IF(A) D1(150°C) D2(125°C) D2(25°C)
12
14
10 12
2 medium diodes
8 10
TJD 1 =TJD2 =125°C
IF1 =5.3A
8
6
6
IF1 +I F2 =8A
4
4

2 2
IF2 =2.7A VF(V)
VF(V)
0
0
0 0,5 1 1,5 2 2,5 3 3,5 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6

VF1 (5.3A,150°C) = V F2 (2.7,125°C) = 1.15V VF1 (5.3A,150°C) = V F2 (2.7,125°C) = 1.15V

(a) (b)

We now use, the same approach to compare reverse recovery charges: QRR at IT = 10 A
and VR = 400 V, versus dIF/dt for different configurations. Consider the method employed
with an example. In the case of diode D1 (Tj1 = 150 °C) in parallel with D2 (Tj2 = 125 °C) for
IT = 10 A we get IF1 = 6.7 A and IF2 = 3.3 A. Since IT = IF1 + IF2, we have:

Equation 13
dIT/dt =dIF1/dt + dIF2/dt
If dIT/dt = 300 A/µs, we get dIF1/dt = 200 A/µs and dIF2/dt = 100 A/µs. Figure 5.b
shows the switching oscillograms of D1 at IF1 = 6.7 A, dIF1/dt = 200 A/µs, Tj1 = 150 °C
and that of D2 at IF2 = 3.3 A, dIF2/dt = 100 A/µs, Tj2 = 125 °C. In these conditions
accurate measurements give:

Equation 14
QRR(D1)(6.7 A, 200 A/µs, 150 °C) = 125 nC, QRR(D2)(3.3 A, 100 A/µs, 125 °C) = 59 nC
So QRR of D1 in parallel with D2 is:

Equation 15
QRR(D1 + D2) = QRR(D1) + QRR(D2) = 184 nC
Assume now two diodes D1 are connected together. Obviously the current will be well
balanced so we have: IF1 = 5 A, dIF1/dt = 150 A/µs, Tj1 = 125 °C. Measurements give:

Equation 16
QRR(D1)(5 A, 150 A/µs, 125 °C) = 80 nC

Equation 17
So QRR(2 D1) = 2 • QRR(D1)(5 A, 150 A/µs, 125 °C) = 160 nC

DocID025436 Rev 1 7/16

16
Current sharing AN4381

In the same way we obtain:

Equation 18
So QRR(2 D2) = 2 • QRR(D2)(5 A, 150 A/µs, 125 °C) = 150 nC
It is interesting to note that while D1 has a lower forward voltage drop than D2, the reverse
recovery charges are higher for D1.

Figure 5. Switching oscillograms of D1 and D2

IT= 10A dI T/dt =300A/µs IF1 =I F2 = 5A TJD2 =125°C

300A/µs IT = 10A dIT/dt =300A/µs
IF1 = 6.7A 200A/µs, TJD1 =150°C V R =400V IT = 10A
V R=400V
IF2= 3.3A
dIT/dt =150A/µs

100A/µs, TJD2 =125°C ID2

ID1

5A/div 2A/div

10 ns/div
50 ns/div

(a) (b)

Using this method for different dIT/dt we get the diagrams shown in Figure 6.

Figure 6. QRR at IT = 10 A and VR = 400 V versus dIT/dt for different configurations

QRR (nC)
240

220 D1 in parallel with D2

Tj(D1) = 150 °C, TjD2 = 125 °C

200

180 2 D1 in parallel
Tj(D1) = 125 °C

160
D1 in parallel with D2
Tj(D1) = TjD2 = 125 °C
140

2 D2 in parallel
120 Tj(D2) = 125 °C

dIT/dt (A/µs)
100
100 200 300 400 500 600

8/16 DocID025436 Rev 1

AN4381 Current sharing

To summarize, the VF and QRR comparison between two STTH5R06 in parallel having a
dispersion of ∆VF(5A, 25 °C) = 550 mV with the ideal case constituted by medium diodes
indicates that these characteristics are close when junction temperatures are identical.
When the junction temperature difference between D1 and D2 increases, VF tends to
decrease slightly and QRR tends to increase slightly. We cannot make a general conclusion
from a particular case, but this example shows the general trend and illustrates a method
which can be employed for others configurations.

1.5 Considerations of maximum dispersion: ∆VFmax (I0, 25 °C)

The above considerations show the key impact of the maximum dispersion
∆VFmax(I0, 25 °C) on the current imbalance. For a designer it is not always easy to know this
value. However, the following information can be given:
• ∆VFmax(I0, 25 °C) increases with the voltage rating (VRRM). That means the forward
voltage dispersion of 600 V ultrafast diodes will be higher than the dispersion of 200 V
ultrafast diodes. The same consideration can be applied between 200 V ultrafast
diodes and 100 V Schottky diodes and between 100 V Schottky diodes versus 45 V
Schottky diodes.
• For ultrafast diodes having the same VRRM ∆VFmax(I0, 25 °C) is higher for faster diode
families. For example, If we consider 600 V ST ultrafast diodes, R family (Rapid) has
higher dispersion than the L family (Low VF).
• Practically all ST common cathode diodes in the same package can be connected in
parallel without any precaution. Since these diodes are on the same die,
∆VFmax(I0, 25 °C) is very low.
• Low voltage Schottky diodes (VRRM < 60 V) can also be connected in parallel without
precaution.
• Sometimes, designers fix by establishing a maximum ∆VFmax(I0, 25 °C) for all diodes
connected in parallel to ensure a safe design. A good value can be:
∆VFmax(I0, 25 °C) = 40 mV. With this value, the current will be equitably shared
between each diode and the thermal effects will become negligible.

DocID025436 Rev 1 9/16

16
Current sharing AN4381

1.6 Layout recommendation

The basic recommendation is to use a symmetrical layout as illustrated in Figure 7.

Figure 7. Good and bad layouts

Good layout Bad layout
Same RS1=RS2=RS3 Different R S1≠ RS2 ≠ RS3

IT

IT

RS2 RS3
RS1 RS3 RS1 RS2
IF1 IF2 IF3 IF1 IF2 IF3
D1 D2 D3 D1 D2 D3
VF1 VF2 VF3
VF1 VF2 VF3

If the layout is not symmetrical, the connection resistors will increase the current imbalance.
In contrast, a symmetrical layout will balance the current in each diode. To have a real
impact, the values of these resistors have to be of the same order as the resistance of the
diodes. Adding the small resistance in series with each diode can be a good way to balance
the current. On the other hand this solution will generate more power losses and will
decrease the efficiency of the converter. We can observe in Figure 4.b that the resistance of
the diode RD increases with lower forward current IF. So paralleling will be easier for lower
current. The dependency of RD versus IF can also be considered as a compensation effect

10/16 DocID025436 Rev 1

AN4381 Electro-thermal model of diodes in parallel

2 Electro-thermal model of diodes in parallel

2.1 DC Forward characteristic model

The first step is to construct a forward characteristic model of the diode (see Figure 8).

Figure 8. Model of the forward characteristic of the diode

I F =(VF,Tj)

Tj
VF I F =(VF,T j )

This is defined by the following current generator IF depending on Tj and VF

Equation 19
IF(VF,Tj) = a0(Tj) + a1(Tj)VF + a2(Tj)VF + a3(Tj)VF + a4(Tj)VF + a5(Tj)√VF
2 3 4

Each coefficient ai(Tj) is of the form:

Equation 20
a0(Tj) = a00 + a01Tj + a02Tj2 + a03Tj3
Figure 9 and Figure 10 give respectively ai(25 °C) and a0j coefficients for a STTH5R06.

Figure 9. ai(25 °C) coefficients of STTH5R06

IF(A) Example: Tj = 25°C

40

35 D1(25°C) a 0 (25°C) 0.443113633610841

30
a 1(25°C) 1.823450442549035
25
a2 (25°C) -1.596962213365812
20
a 3 (25°C) 1.497001749151565
15
a 4 (25°C) -0.139628758047056
10
a5 (25°C) -1.59534418112371
5
VF(V)
0
0 1 2 3 4

DocID025436 Rev 1 11/16

16
Electro-thermal model of diodes in parallel AN4381

Figure 10. a0i coefficients of STTH5R06

a0(Tj)
0,6

0,4
Original curve
0,2
Fitted curve
0

-0,2

-0,4

-0,6

-0,8 a 00 1.330314150823049
-1 a 01 -0.040753310751888
a 02 0.000157525320538
-1,2
Tj(°C) a 03 0.000000033311313
-1,4
0 25 50 75 100 125 150 175 200

Figure 11 illustrates the precision of this model.

Figure 11. Forward characteristic comparison between model and measurement

IF(A) 175°C 150°C 125°C 100°C 75°C 50°C 25°C
40

30

O Measurement
Modeling

20

10

VF(V)
0 1 2 3 4

12/16 DocID025436 Rev 1

AN4381 Electro-thermal model of diodes in parallel

2.2 Full system model

Having now obtained a good model of the forward characteristic of the diode, we can
construct the model of the total system. Without loss of generality, we consider the simple
example represented in Figure 12. It consists of two STT5R06 diodes mounted on the same
heat sink. The total current IT(t) is rectangular with a switching period TS = 10 µs, a duty
cycle δ = 0.5 and a peak current IP = 10 A. The full model of this system is also shown in
Figure 12. We can distinguish the electrical model defined in the previous paragraph from
the thermal model. In this example the case temperature of the heat sink is constant and is
equal to Tcase = 100 °C. It is important to understand that these two models will work
together. VF1 and VF2 depend on Tj1 and Tj2 which depend on the power losses in the
diodes (P1 and P2). Thus Tj1 and Tj2 depend upon VF1 and VF2

Figure 12. Full system model

Tj1 Tj2 IT
D1 D2 Ts=10 µs
10A

Tcase

Time
δ =0.5

IT P1(t)=VF1 (t).IF1 (t) P2(t)=VF2 (t).IF2 (t)

Tj1 Tj2

IF1 IF2 Cth(j-c) Cth(j-c)

Tj1 Tj2 Rth(j-c) Rth(j-c)
Tcase
VF1 VF2

D1 D2
Rth(j-c)=3°C/W
Cth(j-c)=0.27sW/°C
Electrical Model Thermal Model

In this application note we consider only conduction losses. This hypothesis is justified not
only for Schottky and silicon carbide diodes but also for the major applications using
ultrafast diodes. Effectively, major switching losses, due to reverse recovery charges, are
generally dissipated in the companion switch (MOSFET or IGBT) and do not affect the
current imbalance of the diodes. For applications for which switching losses generated in
the diodes are not negligible versus conduction losses, it is possible to complete the model.
This more complex model is not covered in this application note.

2.3 Simulation results

The simulations were performed with STTH5R06 having different values of
∆VFmax(5 A, 25 °C). Figure 13 shows the forward voltage characteristic of seven
STTH5R06 diodes at Tj = 25 °C and gives ∆VFmax(5 A, 25 °C) versus the reference diode
Dref having the highest VF.

DocID025436 Rev 1 13/16

16
Electro-thermal model of diodes in parallel AN4381

Figure 13. STTH5R06 with different ∆VFmax(5 A, 25 °C)

I (A) D3 D4 D5 D6 D7 D8 D Ref
8 F

ΔVF(5A,25°C)=100mV
7

1
VF(V)
0
0,5 1 1,5 2 2,5 3

Figure 14 represents the variation current and junction temperature versus time of each
diode for respectively ∆VFmax(5 A, 25 °C) equal to 100 mV, 300 mV, 400 mV and 600 mV.
The current imbalance and the difference of junction temperature between Dref and the
other diode increase with ∆VFmax(5 A, 25 °C). Even for ∆VFmax(5 A, 25 °C) = 600 mV, the
difference of junction temperature is low (< 6 °C), in this example the thermal effect of
negative ⍺ VF < 0 is weak. Up to ∆VFmax(5 A, 25 °C) = 300 mV the current imbalance is low
(IDref = 4.37 A, I6 = 5.63 A).

Figure 14. Simulation results

IF(A) Tj(°C) IF(A) Tj(°C)
20 120 20 120
ΔVF(5A,25°C)=100mV ΔVF(5A,25°C)=300mV
TjD1 = 112°C TjD6 TjD3 = 112,7 °C
TjD8
15 110 TjD_Ref = 111 °C 15 110
TjD_Ref TjD_Ref = 109,9°C
TjD_Ref

10 100 10 100
IT
IT

5 90 ID8 =5,2A 5 90 ID6 =5,63A

ID_Ref =4,8A ID_Ref =4,37A

0 80 0 80
0 100 200 300 400 500 0 100 200 300 400 500
IF(A) Tj(°C) Time (ms) IF(A) Tj(°C) Time (ms)
20 120 20 120
ΔVF(5A,25°C)=400mV
(5A,25°C)=300mV ΔVF(5A,25°C)=600mV
(5A,25°C)=300mV
TjD5 TjD4 = 112,86 °C TjD3 TjD1 = 113,68 °C

15 110 15 110
TjD_Ref TjD_Ref = 109,56°C
TjD_Ref TjD_Ref = 107,84°C

10 100 10 100
IT
IT

5 90 ID5 =5,74A
5 90 ID3 =6,41A

ID_Ref =4,27A
I
D_Ref =3,67A
PROTECTION - Industrial Applications 28/10/2013
0 80 0 80
0 100 200 300 400 500 0 100 200 300 400 500
Time (ms) Time (ms)

14/16 DocID025436 Rev 1

AN4381 Conclusions

2.4 Comments about simulation

This simulation can be easily extrapolated to more complex configurations integrating n
diodes, more accurate thermal models (for example Cauer type circuit thermal model)
including models of the heat sink, layout resistors, more complex IT(t) current wave forms. If
designers are only interested in knowing steady state current and junction temperature it is
possible to reduce the calorific capacity (CTH) to gain simulation time. This tool can be used
to analyze both current imbalance and difference of temperature for transient surge
currents.

3 Conclusions

This application note shows the impact of forward voltage dispersion is generally more
critical than thermal effects for the current imbalance problem. To perform a safe design it is
important to be sure the most stressed diode works within its specified limits in the worst
case situation. The simulation tool described allows estimation of the junction temperature
and current of each diode for transient and steady state phases.

4 Revision history

Table 1. Document revision history

Date Revision Changes

30-Jul-2014 1 Initial release.

DocID025436 Rev 1 15/16

16
 AN4381

IMPORTANT NOTICE – PLEASE READ CAREFULLY

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and
improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on
ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order
acknowledgement.

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or
the design of Purchasers’ products.

No license, express or implied, to any intellectual property right is granted by ST herein.

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.

Information in this document supersedes and replaces information previously supplied in any prior versions of this document.

© 2014 STMicroelectronics – All rights reserved

16/16 DocID025436 Rev 1