L6743B

High current MOSFET driver

Features
 Dual MOSFET driver for synchronous rectified
converters
 High driving current for fast external MOSFET
switching
 Integrated bootstrap diode
VFDFPN8 3 x 3 mm
 High frequency operation
 Enable pin Combined with ST PWM controllers, the driver
 Adaptive dead-time management allows implementing complete voltage regulator
solutions for modern high-current CPUs and
 Flexible gate-drive: 5 V to 12 V compatible DC-DC conversion in general. L6743B embeds
 High-impedance (HiZ) management for output high-current drivers for both high-side and
stage shutdown low-side MOSFETs. The device accepts flexible
 Preliminary OV protection power supply (5 V to 12 V) to optimize the
gate-drive voltage for high-side and low-side
 VFDFPN8 3 x 3 mm package maximizing the system efficiency.
The bootstrap diode is embedded saving the use
Applications of external diodes. Anti shoot-through
 High current VRM / VRD for desktop / server / management avoids high-side and low-side
workstation CPUs MOSFET to conduct simultaneously and,
combined with adaptive dead-time control,
 High current and high efficiency DC / DC minimizes the LS body diode conduction time.
converters
L6743B embeds preliminary OV protection: after
Vcc overcomes the UVLO and while the device is
Description in HiZ, the LS MOSFET is turned ON to protect
L6743B is a flexible, high-frequency dual-driver the load in case the output voltage overcomes a
specifically designed to drive N-channel warning threshold protecting the output against
MOSFETs connected in synchronous-rectified HS failures.
buck topology. The driver is available is VFDFPN8 3 x 3 mm
packages.

Table 1. Device summary

Order code Package Packing

L6743B Tube
VFDFPN8
L6743BTR Tape and reel

July 2019 DS5863 Rev 2 1/17

This is information on a product in full production. www.st.com
Contents L6743B

Contents

1 Typical application circuit and block diagram . . . . . . . . . . . . . . . . . . . . 3

1.1 Application circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.2 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Pins description and connection diagrams . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

4 Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4.1 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

5 Device description and operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

5.1 High-impedance (HiZ) management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
5.2 Preliminary OV protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
5.3 Internal BOOT diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5.4 Power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5.5 Layout guidelines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

2/17 DS5863 Rev 2

L6743B Typical application circuit and block diagram

1 Typical application circuit and block diagram

1.1 Application circuit

Figure 1. Typical application circuit
VCC = 5V to 12V

CDEC
VIN = 5V to 12V

VCC
BOOT
CHF CBULK
PWM Input
L6743B
PWM UGATE HS

EN Input L Vout
EN PHASE

GND LGATE LS COUT

L6743B Reference Schematic

1.2 Block diagram

Figure 2. Block diagram

VCC
BOOT
EN
CROSS CONDUCTION

15k UGATE
HS
ADAPTIVE ANTI

GND
L6743B PHASE
VCC

CONTROL LOGIC PWM

PWM & PROTECTIONS LS LGATE

GND

DS5863 Rev 2
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Pins description and connection diagrams L6743B

2 Pins description and connection diagrams

Figure 3. Pins connection (top view)

2.1 Pin description

Table 2. Pin description
Pin # Name Function

High-side driver supply.

This pin supplies the high-side floating driver. Connect through a
1 BOOT RBOOT - CBOOT capacitor to the PHASE pin.
Internally connected to the cathode of the integrated bootstrap diode. See
Section 5.3 for guidance in designing the capacitor value.
Control input for the driver, 5 V compatible.
This pin controls the state of the driver and which external MOSFET have to
2 PWM be turned-ON according to EN status. If left floating and in conjunction with EN
asserted, it causes the driver to enter the high-impedance (HiZ) state which
causes all MOSFETs to be OFF. See Section 5.1 for details about HiZ.
Enable input for the driver. Internally pulled low by 15 kW.
Pull high to enable the driver according to the PWM status. If pulled low will
3 EN cause the drive to enter HiZ state with all MOSFET OFF regardless of the
PWM status.
See Section 5.1 for details about HiZ.
Device and LS driver power supply. Connect to any voltage between 5 V and
4 VCC
12 V. Bypass with low-ESR MLCC capacitor to GND.
Low-side driver output.
5 LGATE Connect directly to the low-side MOSFET gate. A small series resistor can be
useful to reduce dissipated power especially in high frequency applications.
All internal references, logic and drivers are referenced to this pin. Connect to
6 GND
the PCB ground plane.
high-side driver return path. Connect to the high-side MOSFET source.
7 PHASE This pin is also monitored for the adaptive dead-time management and pre-
OV protection.
high-side driver output.
8 UGATE
Connect to high-side MOSFET gate.
Thermal pad connects the silicon substrate and makes good thermal contact
- TH. PAD
with the PCB. Connect to the PGND plane.

4/17 DS5863 Rev 2

L6743B Maximum ratings

3 Maximum ratings

3.1 Absolute maximum ratings

Table 3. Absolute maximum ratings
Symbol Parameter Value Unit

VCC,VPVCC to GND -0.3 to 15 V

to GND 41
VBOOT, VUGATE V
to PHASE 15
VPHASE to GND -8 to 26 V
VLGATE to GND -0.3 to VCC + 0.3 V
VPWM, VEN to GND -0.3 to 7 V
VCC,VPVCC to GND -0.3 to 15 V

3.2 Thermal data

Table 4. Thermal data
Symbol Parameter Value Unit

Thermal resistance junction to ambient

RTHJA 45 °C/W
(Device soldered on 2s2p, 67 mm x 69 mm board)
RTHJC Thermal resistance junction to case 5 °C/W
TMAX Maximum junction temperature 150 °C
TSTG Storage temperature range 0 to 150 °C
TJ Junction temperature range 0 to 125 °C
Maximum power dissipation at 25 °C
PTOT 2.25 W
(Device soldered on 2s2p PC board)

DS5863 Rev 2
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Electrical specifications L6743B

4 Electrical specifications

4.1 Electrical characteristics

Table 5. Electrical characteristics
(VCC = 12 V±15 %, TJ = 0 °C to 70 °C unless otherwise specified)
Symbol Parameter Test conditions Min. Typ. Max. Unit

Supply current and power-on

UGATE and LGATE = OPEN

ICC VCC supply current 5 mA
BOOT = 12 V
UGATE = OPEN;
IBOOT BOOT supply current 2 mA
PHASE to GND; BOOT = 12 V
VCC turn-ON VCC rising 4.1 V
UVLOVCC
VCC turn-OFF VCC falling 3.5 V

PWM and EN input

Input high - VPWM_IH PWM rising 2 V

Input low - VPWM_IL PWM falling 0.8 V
PWM
PWM = 3.3 V 270 mA
Input leakage
PWM = 0 V -360 mA
tHiZ HiZ hold-off time See Figure 4 150 ns
tprop_L 50 75 ns
Propagation delays See Figure 4
tprop_H 30 45 ns
Input high - VEN_IH EN rising 2 V
Input low - VEN_IH EN falling 0.8 V
EN
Input resistance to GND 15 kW
Input leakage EN = 3.3 V 220 mA

Gate drivers

RHIHS HS source resistance BOOT - PHASE = 12 V; 100 mA 2.3 2.8 W

BOOT - PHASE = 12 V;
IUGATE HS source current (1) 2 A
CUGATE to PHASE = 3.3 nF
RLOHS HS sink resistance BOOT - PHASE = 12 V; 100 mA 2 2.5 W
RHILS LS source resistance 100 mA 1.3 1.8 W
(1)
ILGATE LS source current CLGATE to GND = 5.6 nF 3 A
RLOLS LS sink resistance 100 mA 1 1.5 W

Protections

VPRE_OV Pre-OV threshold PHASE rising 1.8 V

1. Parameter(s) guaranteed by designed, not fully tested in production

6/17 DS5863 Rev 2

L6743B Device description and operation

5 Device description and operation

L6743B provides high-current driving control for both high-side and low-side N-channel
MOSFETS connected as step-down DC-DC converter driven by an external PWM signal.
The integrated high-current drivers allow using different types of power MOSFETs (also
multiple MOS to reduce the equivalent RDS(on), maintaining fast switching transition.
The driver for the high-side MOSFET use BOOT pin for supply and PHASE pin for return.
The driver for the low-side MOSFET use the VCC pin for supply and PGND pin for return.
The driver embodies a anti-shoot-through and adaptive dead-time control to minimize low-
side body diode conduction time maintaining good efficiency saving the use of Schottky
diodes: when the high-side MOSFET turns off, the voltage on its source begins to fall; when
the voltage reaches about 2 V, the low-side MOSFET gate drive voltage is suddenly applied.
When the low-side MOSFET turns off, the voltage at LGATE pin is sensed. When it drops
below about 1 V, the high-side MOSFET gate drive voltage is suddenly applied. If the
current flowing in the inductor is negative, the source of high-side MOSFET will never drop.
To allow the low-side MOSFET to turn-on even in this case, a watchdog controller is
enabled: if the source of the high-side MOSFET doesn't drop, the low-side MOSFET is
switched on so allowing the negative current of the inductor to recirculate. This mechanism
allows the system to regulate even if the current is negative.
Before VCC to overcome the UVLO threshold, L6743B keeps firmly-OFF both high-side and
low-side MOSFETS then, after the UVLO has been crossed, the EN and PWM inputs take
the control over driver’s operations. EN pin enables the driver: if low will keep all MOSFET
OFF (HiZ) regardless of the status of PWM. When EN is high, the PWM input takes the
control: if left floating, the internal resistor divider sets the HiZ State: both MOSFETS are
kept in the OFF state until PWM transition.
After UVLO crossing and while in HiZ, the preliminary-OV protection is activated: if the
voltage senses through the PHASE pin overcomes about 1.8 V, the low-side MOSFET is
latched ON in order to protect the load from dangerous over-voltage. The Driver status is
reset from a PWM transition.
Driver power supply as well as power conversion input are flexible: 5 V and 12 V can be
chosen for high-side and low-side MOSFET voltage drive.

Figure 4. Timing diagram (EN = high)

HiZ Window HiZ Window

PWM

HS Gate
HiZ

HiZ

LS Gate
tdead_LH

tdead_HL

tprop_ L
tprop_H
tprop_L

thold-off thold-off

DS5863 Rev 2
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Device description and operation L6743B

5.1 High-impedance (HiZ) management

The driver is able to manage high-impedance state by keeping all MOSFETs in off state in
two different ways.
 If the EN signal is pulled low, the device will keep all MOSFETs OFF careless of the PWM
status.
 When EN is asserted, if the PWM signal remains in the HiZ window for a time longer than
the hold-off time, the device detects the HiZ condition so turning off all the MOSFETs. The
HiZ window is defined as the PWM voltage range comprised between VPWM_IL and
VPWM_IH.
The device exits from the HiZ state only after a PWM transition to logic zero (VPWM <
VPWM_IL).
See Figure 4 for details about HiZ timings.
The implementation of the high-impedance state allows the controller that will be connected
to the driver to manage high-impedance state of its output, avoiding to produce negative
undershoot on the regulated voltage during the shut-down stage. Furthermore, different
power management states may be managed such as pre-bias start-up.

5.2 Preliminary OV protection

After VCC has overcome its UVLO threshold and while in HiZ, L6743B activates the prelim-
inary-OV protection.
The intent of this protection is to protect the load especially from high-side MOSFET failures
during the system start-up. In fact, VRM, and more in general PWM controllers, have a 12 V
bus compatible turn-on threshold and results to be non-operative if VCC is below that turn-
on thresholds (that results being in the range of about 10 V). In case of a high-side MOSFET
failure, the controller won’t recognize the over voltage until VCC = ~10 V (unless other spe-
cial features are implemented): but in that case the output voltage is already at the same
voltage (~10 V) and the load (CPU in most cases) already burnt.
L6743B by-pass the PWM controller by latching on the low-side MOSFET in case the
PHASE pin voltage overcome 2 V during the HiZ state. When the PWM input exits form the
HiZ window, the protection is reset and the control of the output voltage is transferred to the
controller connected to the PWM input.
Since the driver has its own UVLO threshold, a simple way to provide protection to the out-
put in all conditions when the device is OFF consists in supplying the controller through the
5 VSB bus: 5 VSB is always present before any other voltage and, in case of high-side
short, the low-side MOSFET is driven with 5 V assuring a reliable protection of the load.
Preliminary OV is active after UVLO and while the driver is in HiZ state and it is disabled
after the first PWM transition. The controller will have to manage its output voltage from that
time on.

8/17 DS5863 Rev 2

L6743B Device description and operation

5.3 Internal BOOT diode

L6743B embeds a boot diode to supply the high-side driver saving the use of an external
component. Simply connecting an external capacitor between BOOT and PHASE complete
the high-side supply connections.
To prevent bootstrap capacitor to extra-charge as a consequence of large negative spikes,
an external series resistance RBOOT (in the range of few ohms) may be required in series to
BOOT pin.
Bootstrap capacitor needs to be designed in order to show a negligible discharge due to the
high-side MOSFET turn-on. In fact it must give a stable voltage supply to the high-side
driver during the MOSFET turn-on also minimizing the power dissipated by the embedded
Boot Diode. Figure 6 gives some guidelines on how to select the capacitance value for the
bootstrap according to the desired discharge and depending on the selected MOSFET.

Figure 5. Bootstrap capacitance design

5.4 Power dissipation

L6743B embeds high current drivers for both high-side and low-side MOSFETs: it is then
important to consider the power that the device is going to dissipate in driving them in order
to avoid overcoming the maximum junction operative temperature.
Two main terms contribute in the device power dissipation: bias power and drivers' power.
 Device power (PDC) depends on the static consumption of the device through the supply
pins and it is simply quantifiable as follow:
P DC = V CC  I CC + V PVCC  I PVCC

 Drivers' power is the power needed by the driver to continuously switch ON and OFF the
external MOSFETs; it is a function of the switching frequency and total gate charge of the
selected MOSFETs. It can be quantified considering that the total power PSW dissipated
to switch the MOSFETs dissipated by three main factors: external gate resistance (when
present), intrinsic MOSFET resistance and intrinsic driver resistance. This last term is the
important one to be determined to calculate the device power dissipation.
The total power dissipated to switch the MOSFETs results:
P SW = F SW   Q GHS  PVCC + Q GLS  VCC 

When designing an application based on L6743B it is recommended to take into

consideration the effect of external gate resistors on the power dissipated by the driver.

DS5863 Rev 2
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Device description and operation L6743B

External gate resistors helps the device to dissipate the switching power since the same
power PSW will be shared between the internal driver impedance and the external resistor
resulting in a general cooling of the device.
Referring to Figure 5, classical MOSFET driver can be represented by a push-pull output
stage with two different MOSFETs: P-MOSFET to drive the external gate high and N-
MOSFET to drive the external gate low (with their own RdsON: Rhi_HS, Rlo_HS, Rhi_LS,
Rlo_LS). The external power MOSFET can be represented in this case as a capacitance
(CG_HS, CG_LS) that stores the gate-charge (QG_HS, QG_LS) required by the external
power MOSFET to reach the driving voltage (PVCC for HS and VCC for LS). This
capacitance is charged and discharged at the driver switching frequency FSW.
The total power Psw is dissipated among the resistive components distributed along the
driving path. According to the external gate resistance and the power-MOSFET intrinsic
gate resistance, the driver dissipates only a portion of Psw as follows:

1 R hiHS R loHS
P SW – HS = ---  C GHS  PVCC  Fsw   ------------------------------------------------------------- -
2
- + -------------------------------------------------------------
2  R hiHS + R GateHS + R iHS R loHS + R GateHS + R iHS

1 R hiLS R loLS
P SW – LS = ---  C GLS  VCC  Fsw   ----------------------------------------------------------- -
2
- + -----------------------------------------------------------
2  R hiLS + R GateLS + R iLS R loLS + R GateLS + R iLS

The total power dissipated from the driver can then be determined as follows:
P = P DC + P SW – HS + P SW – LS

Figure 6. Equivalent circuit for MOSFET drive

VCC

VCC BOOT
RhiHS
RhiLS

RGATELS RILS RGATEHS RIHS

LGATE HGATE
RloHS
RloLS

CGLS
CGHS

GND PHASE
LS DRIVER LS MOSFET HS DRIVER HS MOSFET

10/17 DS5863 Rev 2

L6743B Device description and operation

5.5 Layout guidelines

L6743B provides driving capability to implement high-current step-down DC-DC converters.
The first priority when placing components for these applications has to be reserved to the
power section, minimizing the length of each connection and loop as much as possible. To
minimize noise and voltage spikes (also EMI and losses) power connections must be a part
of a power plane and anyway realized by wide and thick copper traces: loop must be
anyway minimized. The critical components, such as the power MOSFETs, must be close
one to the other. However, some space between the power MOSFET is still required to
assure good thermal cooling and airflow.
Traces between the driver and the MOSFETS should be short and wide to minimize the
inductance of the trace so minimizing ringing in the driving signals. Moreover, VIAs count
needs to be minimized to reduce the related parasitic effect.
The use of multi-layer printed circuit board is recommended.
Small signal components and connections to critical nodes of the application as well as
bypass capacitors for the device supply are also important. Locate the bypass capacitor
(VCC, PVCC and BOOT capacitors) close to the device with the shortest possible loop and
use wide copper traces to minimize parasitic inductance.
Systems that do not use Schottky diodes in parallel to the low-side MOSFET might show big
negative spikes on the phase pin. This spike can be limited as well as the positive spike but
has an additional consequence: it causes the bootstrap capacitor to be over-charged. This
extra-charge can cause, in the worst case condition of maximum input voltage and during
particular transients, that boot-to-phase voltage overcomes the abs.max.ratings also
causing device failures. It is then suggested in this cases to limit this extra-charge by adding
a small resistor RBOOT in series to the boot capacitor. The use of RBOOT also contributes in
the limitation of the spike present on the BOOT pin.
For heat dissipation, place copper area under the IC. This copper area may be connected
with internal copper layers through several VIAs to improve the thermal conductivity. The
combination of copper pad, copper plane and VIAs under the driver allows the device to
reach its best thermal performances.

Figure 7. Driver turn-on and turn-off paths

VCC

VCC BOOT

CGD CGD
RBOOT RBOOT
RGATE RINT RGATE RINT

LGATE HGATE
CBOOT CGS CDS CBOOT CGS CDS

GND PHASE
LS DRIVER LS MOSFET HS DRIVER HS MOSFET

DS5863 Rev 2
17
Device description and operation L6743B

Figure 8. External components placement example

Rboot Cboot

BOOT 1 8 UGATE

L6743B
PWM 2 7 PHASE
EN 3 6 GND
VCC 4 5 LGATE

12/17 DS5863 Rev 2

L6743B Package mechanical data

6 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK®

packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com

DS5863 Rev 2
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Package mechanical data L6743B

Figure 9. VFDFPN8 mechanical data and package dimensions

DIMENSIONS
mm mils
REF. PACKAGE AND
MIN. TYP. MAX. MIN. TYP. MAX. PACKING INFORMATION
A 0.80 0.90 1.00 31.49 35.43 39.37

A1 0.02 0.05 0.787 1.968

A2 0.55 0.65 0.80 21.65 25.59 31.49

Very thin Fine pitch Dual
Flat Package no Lead
A3 0.20 7.874

b 0.18 0.25 0.30 7.086 9.842 11.81 Weight: not available

D 2.85 3.00 3.15 112.2 118.1 124.0

D2 2.20 2.70 86.61 106.3

E 2.85 3.00 3.15 112.2 118.1 124.0

E2 1.40 1.75 55.11 68.89

e 0.50 19.68

L 0.30 0.40 0.50 11.81 15.74 19.68

VFDFPN8 (3x3)
ddd 0.08 3.149

14/17 DS5863 Rev 2

L6743B Package mechanical data

Figure 10. L6743B recommended footprint

DS5863 Rev 2
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Revision history L6743B

7 Revision history

Figure 11. Document revision history

Date Revision Changes

17-Jun-2008 1 Initial release

24-Jul-2019 2 Added Figure 10

16/17 DS5863 Rev 2

L6743B

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DS5863 Rev 2
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