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Nte 2353

This document describes an NPN silicon transistor in a TO-3PML package for use in horizontal deflection output circuits in TVs. It has a fast transition time of 100 nanoseconds, a high breakdown voltage of 1500V, and an on-chip damper diode. The document provides maximum ratings and typical electrical characteristics for the transistor including current, voltage, gain and switching performance.

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59 views2 pages

Nte 2353

This document describes an NPN silicon transistor in a TO-3PML package for use in horizontal deflection output circuits in TVs. It has a fast transition time of 100 nanoseconds, a high breakdown voltage of 1500V, and an on-chip damper diode. The document provides maximum ratings and typical electrical characteristics for the transistor including current, voltage, gain and switching performance.

Uploaded by

CRAFT
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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NTE2353

Silicon NPN Transistor


TV Horizontal Deflection Output
w/Damper Diode
TO−3PML Type Package
Features:
D High Speed: tf = 100nsec
D High Breakdown Voltage: VCBO = 1500V
D On−Chip Damper Diode
Absolute Maximum Ratings: (TA = +255C unless otherwise specified)
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Collector Dissipation (TC = +255C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1505C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C
Electrical Characteristics: (TA = +255C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current ICES VCE = 1500V − − 1.0 mA
ICBO VCB = 800V − − 10 mA
Collector Sustain Voltage VCEO(sus) IC = 100mA, IB = 0 800 − − V
Emitter Cutoff Current IEBO VEB = 4V 40 − 130 mA
Collector Emitter Saturation Voltage VCE(sat) IC = 8A, IB = 1.6A − − 5 V
Base Emitter Saturation Voltage VBE(sat) IC = 8A, IB = 1.6A − − 1.5 V
DC Current Gain hFE1 VCE = 5V, IC = 1A 8 − −
hFE2 VCE = 5V, IC = 8A 5 − 10
Diode Forward Voltage VF IEC = 10A − − 2.0 V
FallTime tf IC = 6A, IB1 = 1.2A, IB2 = 2.4A − 0.1 0.3 ms
Rev. 7−14
.221 (5.6) .134 (3.4) Dia

.123 (3.1) .630 (16.0)

.315
(8.0)

.866
(22.0)

B C E

.158 (4.0)

.804
(20.4)

.215 (5.45) .040 (1.0)

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