FETs Databook

Semiconductor Databook
Revised January, 2000 InterFET Corporation 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com
01/99
Semiconductor Databook
Volume 4, Number 6
Table of Contents
About InterFET Terms & Conditions Optional Hi-Rel Process Flows About InterFET Scientific IFPA300/301 Series JFET IC InterFET Scientific R&D Section A Section B Section C Section D Section E Section F Section G Section H Selection Guide by Application JFET Data Sheets Diode, Regulator & VCR Data Sheets Japanese Equivalent Data Sheets Small Outline Plastic Package Device Data Geometry & Process Characterization Data Package Information Application Notes
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nterFET was founded in 1982 to design and manufacture FieldEffect Transistors. Having only one product has a way of focusing ones attention. Good enough isnt good enough. Close isnt close at all. That focus has worked for us. Every year we have grown, and every year we have improved our plant, our engineering, our processes, our quality, and our services. We are still focused on FieldEffect Transistors and related devices. InterFET is big enough to competitively supply over 400 standard JFET types. Small enough to craft JFETs to your exact specifications. Big enough to supply national and international leading-edge electronic manufacturers and laboratories. Small enough for you to talk directly with the people that engineer and manufacture the product. Every business has a culture, a way of doing business. Ours is How we serve each customer is more important than how many customers we serve.
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Minimum Orders Cancellation or Rescheduling Terms & Conditions Freight Charges Shipping Specifications
$250 per line item (standard product). Standard product (databook) orders may be cancelled or rescheduled prior to 30 days of ship date without penalty. No cancellation or rescheduling will be accepted within 30 days of scheduled ship date. Net 30 days on approved credit. Prepaid and added to the invoice unless otherwise specified. F.O.B. Garland, Texas, via any carrier you wish, including UPS and Federal Express. InterFET device types are based on JEDEC or EIA registered data or InterFET datasheet specifications. Customer source-control drawings will be assigned special part numbers proprietary to the customer. Many combinations of selected electrical, process flow, and package configurations may be sourced from standard InterFET products.
InterFET Corporation makes no warranty regarding information furnished and reserves the right to make changes to standard products at any time and without notice. InterFET Corporation does not assume any liability arising from the application or use of InterFET data or products. InterFET Corporation does not participate in life support system designs, nor knowingly sell products for life-support equipment. InterFET Corporation reserves the right to make changes in any product specifications any time without notice. We have diligently checked and cross-checked the data in this book to coincide with published charts and drawings. Abbreviations have been updated and obvious errors corrected. When there were conflicts, logic was the prime guide, followed by experience. Printing and typography was accommodated in the interest of readability. We suggest that, when ordering from InterFET, you also advise us of your specifications. Often, there are alternative solutions. If so, we want you to know the choices. And that, surely, is to your advantage.
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High-Reliability Process Flows
nterFET Corporation has served the military and industrial highreliability junction field effect transistor market since 1984. There are standard high-reliability processing options available on most packaged and die products and are typically less costly than products supplied to source control drawing requirements.
Option-1 process flow provides most of the 100% screening steps for a MIL-STD-883, Method 5008 Class B die product. Option-2 process flow provides most of the 100% screening steps for a JANTXV type device as defined by MIL-S-19500 requirements. Option-3 process flow provides many of the 100% screening steps for a JANS type device as defined by MIL-S-19500 requirements.
Should Option-1, Option-2, or Option-3 process flows not meet your requirements, InterFET Corporation can provide processing based on your source control drawings and detail specifications. All MIL-S-19500/MIL-STD-750 requirements through JANS-level type processing can be provided. Manufacturing baseline control can be offered as an option. We have earned a reputation in the industry for manufacturing High-Reliability products for a wide range of military and industrial users and would be pleased to work with you.
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Option 1 Process Flow Evaluation for High-Reliability Un-Encapsulated JFET Die

Screen PreCap Visual Seal Initial Electrical Temperature Cycle Final Electrical Wire Bond Evaluation Quality Conformance 883-2011 Per InterFET QB-IN-GN04 750-1051 MILSTD Method 750-2072 Condition 100% @ 100X minimum Per InterFET PB-IN-GN04 Per InterFET PB-CW-MC01 Per InterFET PB-TS-EL00 Condition D, 20 cycles, 65 to +200C, 15 minutes at extremes, minimum Per InterFET PB-FT-0000
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Option 2 Process Flow for High-Reliability Metal Case JFETs

Screen PreCap Visual Seal Initial Electrical Stabilization Bake Temperature Cycle 750-1031 750-1051 MILSTD Method 750-2072 Condition 100% @ 100X minumum Per InterFET PB-IN-GN04 Per InterFET PB-CW-MC01 Per InterFET PB-TS-EL00 200C for 24 hours Condition D, 20 cycles, 65 to +200C, 15 minutes at extremes, minimum Y1 axis only, 20,000g Condition G or H, 5E8 atm/ccsec maximum Condition C Per InterFET PB-TS-EL01 750-1039 Condition A, 150C for 168 hours, minimum Per InterFET PB-FT-0000 within 24 hours Per InterFET PB-FT-0000 Optional if all customer required electrical parameters are included in Post-HTRBTest Per InterFET QB-IN-GN04
Constant Acceleration Fine Leak Gross Leak PreHTRB Electrical HTRBConditioning PostHTRB End Point Electrical Final Electrical
750-2006 750-1071 750-1071
Quality Conformance
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Option 3 Process Flow for Class S High-Reliability Metal Case JFETs

Screen PreCap Visual Seal Initial Electrical Stabilization Bake Temperature Cycle Constant Acceleration PIND Fine Leak Gross Leak PreHTRB Electrical HTRBConditioning PostHTRB End Point Electrical Radiography External Visual Final Electrical 750-2076 750-2071 Per InterFET PB-FT-0000 Optional if all customer required electrical parameters are included in Post-HTRB Test Per InterFET QB-IN-GN04 750-1039 750-1031 750-1051 750-2006 883-2020 750-1071 750-1071 MILSTD Method 750-2072 Condition 100% @ 100X minimum Per InterFET PB-IN-GN04 Per InterFET PB-CW-MC01 Per InterFET PB-TS-EL00 200C for 24 hours Condition D, 20 cycles, -65 to +200C, 15 minutes at extremes, minimum Y1 axis only, 20,000g Condition A Condition G or H, 5E8 atm/ccsec, max Condition C Per InterFET PB-TS-EL01 Condition A, 150C for 168 hours, minimum Per InterFET PB-FT-0000 within 24 hours X1 & Y1 Directions
Quality Conformance
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InterFET Scientific
nterFET Scientific has been created to address the specialized needs of scientists, engineers and designers.
We are told that there are few other JFET manufacturers with our research data bank and our willingness to work in the scientific areas. To some, JFETs are a commodity. To InterFET, JFETs are an emerging technologyready to contribute to the applications of today and tomorrow. We would be pleased to discuss your specific project or to send you an overview of our capabilities.
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InterFET Scientific
JFET and IC Research
nterFET and InterFET Scientific have participated in government laboratory projects at Brookhaven National Laboratory, Lawrence Berkeley Laboratories, INFN (Italian Nuclear Physics Institute) and others... plus grants from DOE/SBIR and the Texas Advanced Research Program. InterFET Scientific has substantial experience partnering research and development with scientific and commercial customers that need very low noise, radiation tolerance, cryogenic operation or other special requirements.
New Process JFET Integrated Circuit Technology
InterFET is capable of delivering a turnkey product, or, if you provide CAD layout, InterFET will work with you by providing the foundry work.
Custom Discrete JFET Designs
Discrete JFETs with high gain (gm) and high gm/Cin ratio using tetrode (or dual gate) designs to allow minimum capacitance on the input gate. High performance discrete JFET designs to increase radiation tolerance using very small and tight design rules. Unusual discrete JFET designs, such as very large, high voltage, or other special design considerations.
JFET ICs are very specialized products, capable of meeting performance needs that no other IC technology can satisfy. Applications demanding extremely low-noise charge or signal amplification, or needing high tolerance to radiation or ESD are well suited to this new technology. InterFET Scientific has developed this custom integrated circuit capability using exclusively n-channel JFET active components and onboard MOS capacitors and diffused resistors. This process uses P-well isolation and the same epitaxially formed channels which provide discrete JFETs their excellent low-noise and radiation-tolerant characteristics. Overall performance of sensitive preamplifier and amplifier applications is improved over hybrids using discrete JFETs due to reduction of chip and wire parasitics.
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IFPA300, IFPA301
Monolithic JFET Preamplifier

Description & Features
The IFPA300 series is an inverting transimpedance amplifier featuring extremely low noise and a wide gain-bandwidth suitable as a charge-sensitive preamplifier for a broad range of applications. The monolithic IFPA300 series contain 8 n-channel epitaxial-channel diffused-gate JFETs to achieve optimally low 1/f noise performance over a wide temperature range (120K-300K).
DC open loop gain GBW eN @ 10 Hz 85 dB 200 MHz 3.0 nV/Hz
Absolute maximum ratings at TA = 25C

All pins (except Input) referenced to Bias 3 Input to Bias 3 Power Dissipation Derating Factor Operating Temperature 85 dB V 225 mW 1.8 mW/C 150C
At this time, there are two units in this family.
The 300/301 Series gives more flexibility with respect to output transistor drain. The 310/311 Series ties the output transistor drain to the VDD line.
Simplified Schematic Circuit
General Specifications
Power Dissipation at VDD = 12 V Input Leakage Current (T = 300 K) Input-Referred Noise Voltage (f = 10 kHz) Input-Referred Noise Voltage (f = 10 Hz) Output Range at VDD = 12 V Designed to drive 50 load. <100 mW 10 pA 0.6 nV/Hz 3.0 nV/Hz 4.0 V (5.0 V Max)
J4 J7 J3
VDD
Substrate
Charge Sensitive Preamplifier Specifications

The IFPA300 Series is actually tailored to detector capacitance in the 100 1000 pF range.
Input Open-Loop Capacitance Rise Time (CD = 500 pF, Cf = 33 pF) 60 pF 20 ns
Bias 1
J2 J6
J8
Open Drain Output Open Source Output
Bias 2 Input
J1 J5 VSS
Equivalent Noise Charge

(Measured with semigaussian shaping, peaking time = tp)
4200 e rms at CD @ 500 pF, tp = 0.2 m 3200 e rms at CD @ 500 pF, tp = 1.0 m 4200 e rms at CD @ 500 pF, tp = 4.0 m
Bias 3
Packages & Test Circuit Overside
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IFPA300, IFPA301
Monolithic JFET Preamplifier

Input FET J1 selected to the following elecrical parameters.
Parameter BVGSS IGSS IDSS VGS(OFF) GM VGSF Conditions Vds = 0, Ig = 1 A Vds = 0, Vgs = 10 V Vds = 0, Vgs = 10 V Vds = 0, Id = 1 A Vgs = 0, Vds = 10 V Id = 1 A 40 1 50 0.35 0.65 Min 25 2 500 2 Max Units Volts nA mA Volts mM Volts
Bias 2 Bias 1
J2 J6 J8 VDD = +12 V
DUT
J4 VDD J7 J3
120K
Substrate Open Drain Output Open Source Output
Test Point #
Test Circuit Reference

Parameter VDCout Vin VACout VACout Conditions Vdd = 12 V, VS = 6 V Test pt #1 Vdd = 12 V, VS = 6 V Test pt #2 Vdd = 12 V, VS = 6 V t = O sec Vdd = 12 V, VS = 6 V t = 100 sec Min 6 0.6 50 20 Max 10 1.6 Units V
Input 20K
J1
J5 VSS
Bias 3
V mV mV
10pF AC Input Test Point #2 2M 1M 10pF
10K
Vsupply = 6 V
0.165 (4.19) 0.185 (4.70) 0.335 (8.51) 0.370 (9.40) 0.305 (7.75) 0.335 (8.51)
0.010 (0.25) 0.040 (1.02) 8 Leads - Dia. 0.016 (0.41) 0.021 (0.53)
0.029 (0.74) 0.045 (1.14) 0.200 (5.08) Basic 5 4 45 3 2 1 6 7
8 7 6 5 Top 1 2 3 4
0.244 (6.20) 0.158 (4.01) 0.228 (5.79) 0.150 (3.81) 0.028 (0.71) 0.024 (0.61)
0.050 (1.27)
8
0.022 (0.56) 0.018 (0.046
0.018 (0.46 0.014 (0.36) 0.049 (1.24) 0.059 (1.50)
0.015 (0.37) Min. 0.069 (1.75) 0.053 (1.35)
45
0.010 (0.25) 0.040 (1.02) 0.500 (12.70)
Standoff 0.110 (2.79) 0.160 (4.06)
0.028 (0.71) Bottom View 0.034 (0.86)
0.197 (5.00) 0.188 (4.78)
0.009 (0.23) 0.007 (0.18)
IFPA300 uses TO-99 Package

Dimensions in Inches (mm)
IFPA301 uses SOIC-8 Package

Pin Configuration
1 Bias 3, 2 VSS, 3 Bias 1, 4 VDD /Substrate 5 Open Drain Output, 6 Open Source Output, 7 Bias 2, 8 Input
Pin Configuration
1 Bias 2, 2 Input, 3 Bias 3, 4 VSS, 5 Bias 1, 6 VDD/Substrate 7 Open Drain Output, 8 Open Source Output
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InterFET Scientific R&D
Problem: Solution:
Low-noise amplification in hostile environment. Integrated circuits using JFETs. solve this problem by designing a smaller, monolithic preamplifier circuit. The manufacture of JFET integrated circuits is much more difficult than for MOSFETs due to differences in construction. Finding a way to electrically isolate individual JFET components on the circuit is the key to this success. In the beginning InterFET investigated several different types of isolation methods, until the buried layer approach was selected. The buried layer method allows a single, high quality layer of epitaxial silicon to form the channel of the JFET, the same as for discrete JFETs. It also provides for the selective placement of diffused isolation pads under the epitaxy layer to permit the necessary electrical isolation between circuit components. The rest of the process is the same as is used to manufacture InterFETs low-noise discrete JFETs. The JFET integrated circuit for INFN is constructed entirely of n-channel JFETs, and consumes less space and power than the older hybrid approach. And, we were able to accomplish this without sacrificing any of the performance or radiation hardness of the discrete JFET in a hybrid circuit. InterFET Scientific has the experience and skills to provide JFET solutionsfrom initial design to final product in our Garland, Texas, facility. Our engineers would be happy to talk to you about your low-noise amplifier problems.
n the world of high energy physics the understanding of elementary particles and the origins of our universe has driven the need for larger and higher energy colliders. This requires a large array of radiation-hard, lownoise electronics to respond to the small input signals of the detectors which sense the results of high energy particle collisions. The traditional way to handle this need for large calorimeter detectors is to locate small hybrid preamplifiers inside the liquified gas cryostat, near each detector segment, before the signal is sent out for further amplification and signal processing. This small hybrid circuit must operate in a high radiation environment, at temperatures approaching 190C! The heart of each preamplifier is a high gain JFET which offers superior noise capability and robust performance over MOSFET or bipolar technologies. The problem with this approach is that the total power consumption and the cost of the hybrid circuits becomes a significant factor as the detector size and degree of segmentation grows. This could reach 100,000 or more channels for large equipment such as the experiments at CERN. InterFET helped the scientists at the National Institute of Nuclear Physics in Italy (INFN)
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InterFET Scientific R&D
Problem: Solution:
A low-noise JFET with higher gain and less capacitance than is presently available. InterFET Scientific Tetrodes and Circular JFETs.
he people at Lawrence Berkeley Laboratories provide control over the channel current. needed to improve upon the performance By connecting only the top gate to the input of the industry standard 2N4416 JFET for signal we get maximum function control, for a their cooled X-ray detectors. They required a minimum amount of unwanted input capacitransistor with higher tance. InterFET Scientific gain-to-capacitance ratio designed a circular JFET, Gain to Input Capacitance Ratio Comparison (gm/C) in order to achieve in order to reduce the of Tetrode to Standard 2N6451 JFET optimum performance. size of the gate to the 2.0 The industry makes a absolute minimum Tetrode Vg2 = V wide array of triode, with no end effect losses 1.5 2N6451 JFET (single gate) JFETs availfound in conventional, able. The problem is that ladder types of JFET 1.0 a standard triode JFET design. In application the comes with a lot of gate substrate gate can be held 0.5 junction area which at a fixed bias and the VDS = 3.5/4.0 V Near Vp does not contribute to input signal is directed 0 0.25 0.5 0.75 1.0 control of the channel to the top gate. current it simply adds VG1S, Volts extra input capacitance. Two different circle This reduces the high FETs were designed, frequency cutoff of the transistor, and diminone to replace a 2N4416 and the other for the ishes its low-noise performance. 2N6451. The new approach has resulted in an increase in gm/C; up to 40% over the convenInterFET Scientific worked with Lawrence tional JFET. Berkeley Labs to develop tetrode JFETs that separate the gate into two parts. The outer boundaries of the conduction channel are defined by the substrate gate. This requires a relatively large junction area, as is the case in triode designs. The other, top gate terminal is much smaller in area, and is located between the source and drain contactsjust enough to
gm/CISS mS/pF
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A-1
Semiconductor Databook Section A Naming Convention Selection Guide By Application
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Semiconductor Naming Convention
JFETs, Diodes, Regulators & VCRs
evice part numbers in the InterFET Semiconductor Databook correspond to most industry standard part numbering schemes. They typically consist of a prefix containing two or more alpha-numeric characters followed by a sequence of 3 or 4 numbers.
IFxxxx IFPxxxx IFNxxxx SMPxxxx
The IPA... part numbers are InterFET-specific numbers for a proprietary line of JFET integrated circuits. These manufacturer specific part numbers are also found in the databook.
Uxxxx PNxxxx DPADxxxx Jxxxx PADxxxx VCRxxxx
Part numbers prefixed with I are unique InterFET parts which typically have no other industry source. IFN and IFP prefixed part numbers are normally InterFET variations of JEDEC 2N and Japanese 2SK and 2SJ part numbers. Examples are such as the IFN6449 which is an InterFET variation of the 2N6449 and the IFN112 which is an InterFET equivalent of the 2SK112. These equivalent parts typically perform the same function as the industry standards but may have some minor parametric variation or be offered in a different package than the registered part number. Products in surface mount packages, SOT-23 and SOIC-8 have a SMP prefix to the part number. This is normally a 3 or 4 digit number which corresponds to the standard or registered part number. An example of this is the SMP439I which is a 2N4391 equivalent device in an SOT-23 plastic surface mount package.
Although the U and J part numbers are not JEDEC registered, they are accepted by users and manufacturers as standard industry part numbers. Several semiconductor manufacturers of JFETs include U... and J part numbers in their data book. The PN part numbers are normally TO-92 plastic encapsulated equivalents of 2N metal case part numbers. This is also an accepted industry practice. PAD and DPAD indicate that the device is a picoAmp diode or a dual pico-Amp diode. Voltage controlled resistors will normally carry the VCR prefix.
2Nxxxx
JEDEC (Joint Electron Device Engineering Council) and EIA (Electronics Industry Association) standard for registered transistor part numbers specifies a 2N prefix. Most of the JFETs listed in the InterFET data book carry this part numbering scheme. The numeric index has been compiled to find parts with the same number but different prefixes.
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A-3
Semiconductor Selection Guide by Application

Amplifiers
Audio Page Low-Noise, High-Gain Page
2N3823, 2N3824 2N4117, 2N4117A 2N4118, 2N4118A 2N4119, 2N4119A 2N4338, 2N4339 2N4340, 2N4341 2N4867, 2N4867A 2N4868, 2N4868A 2N4869, 2N4869A 2N5460, 2N5461, 2N5462 2N6451, 2N6452, 2N6453, 2N6454 IF3602 IF4511 IFN146 IFN147 J201, J202 J203, J204 J210, J211 J212 J230, J231 J232
Differential
B-4 B-9 B-9 B-9 B-11 B-12 B-17 B-17 B-17 B-21 B-25 B-26 B-35 B-39 D-5 D-6 B-54 B-55 B-56 B-57 B-58 B-59
2N6451, 2N6452, 2N6453, 2N6454 2N6550 IF140, IF140A IF142 IF1320 IF1330 IF1331 IF1801 IF3601 IF3602 IF4500 IF4501 IF4510 IF9030 IFN112 IFN860
VHF
B-25 B-26 B-27 B-28 B-29 B-30 B-31 B-32 B-33 B-34 B-35 B-36 B-37 B-38 B-40 D-4 B-43
2N3954, 2N3955, 2N3956, 2N3957, 2N3958 2N5911, 2N5912 IF3602 IFN421, IFN422, IFN423 IFN424, IFN425, IFN426 IFN5564, IFN5565, IFN5566 IFN5911, IFN5912 SMP5911, SMP5912 U430, U431
B-5 B-6 B-23 B-35 B-41 B-42 B-46 B-47 B-64 B-70
2N3821, 2N3822, 2N3823 2N4220, 2N4220A 2N4221, 2N4221A 2N4222, 2N4222A 2N4416, 2N4416A 2N5397, 2N5398 2N5484, 2N5485, 2N5486 IFN5911, IFN5912 J304, J305 J308, J309 J310 U308, U309 U310 U311 U430, U431
B-3 B-10 B-10 B-10 B-14 B-20 B-22 B-47 B-60 B-61 B-62 B-66 B-67 B-68 B-70
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Choppers
2N3993, 2N3993A 2N3994, 2N3994A 2N4391, 2N4392, 2N4393 2N4856, 2N4856A 2N4857, 2N4857A 2N4858, 2N4858A 2N4859, 2N4859A 2N4860, 2N4860A 2N4861, 2N4861A 2N5020, 2N5021 IFN5432, IFN5433, IFN5434 J108, J109, J110, J110A J111, J112, J113 J174, J175 J176, J177 P1086, P1087 U290, U291
Page
Current Limiting & Regulators

2N4338, 2N4339, 2N4340, 2N4341 J500, J501, J502, J503, J504, J505, J506, J507, J508, J509, J510, J511 J553, J554, J555, J556, J557 U553, U554, U555, U556, U557
Page
B-7 B-8 B-13 B-15, B-16 B-15, B-16 B-15, B-16 B-15, B-16 B-15, B-16 B-15, B-16 B-18 B-45 B-49 B-50 B-51 B-52 B-53 B-63 B-65
B-11 B-12 C-4 C-4 C-5 C-5 C-6 C-6 C-7 C-7
Electrometers
IFN424, IFN425, IFN426 B-42
High Voltage
2N6449, 2N6450 IFN6449, IFN6450 B-24 B-48
Japanese Equivalents
IFN17, IFN40 IFN59, IFN105 IFN113, IFN152 IFN363, IFP44 IFN112 IFN146 IFN147 D-2 D-2 D-3 D-3 D-4 D-5 D-6
Commutators
2N3993, 2N3993A 2N3994, 2N3994A 2N4391, 2N4392, 2N4393 2N4856, 2N4856A 2N4857, 2N4857A 2N4858, 2N4858A 2N4859, 2N4859A 2N4860, 2N4860A 2N4861, 2N4861A IFN5564, IFN5565, IFN5566 J108, J109, J110, J110A J111, J112, J113 J174, J175, J176, J177 U290, U291 B-7 B-8 B-13 B-15, B-16 B-15, B-16 B-15, B-16 B-15, B-16 B-15, B-16 B-15, B-16 B-46 B-49 B-50 B-51 B-52 B-53 B-65
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A-5

Mixers
2N4220, 2N4220A 2N4221, 2N422lA 2N4222, 2N4222A 2N4416, 2N4416A 2N5397, 2N5398 2N5484, 2N5485, 2N5486 J304, J305 U350
Page
Switches
2N4856, 2N4856A 2N4857, 2N4857A 2N4858, 2N4858A 2N4859, 2N4859A 2N4860, 2N4860A 2N4861, 2N4861A IF5020, IF5021 2N5114, 2N5115, 2N5116 IFN5114, IFN5115, IFN5116 IFN5432, IFN5433, IFN5434 J108, J109, J110, J110A J111, J112, J113 J174, J175, J176, J177 P1086, P1087 U290, U291
Page
B-10 B-10 B-10 B-14 B-20 B-22 B-60 B-69
Oscillator
2N4220, 2N4220A 2N4221, 2N4221A 2N4222, 2N4222A 2N5397, 2N5398 2N5484, 2N5485 2N5486 J304, J305, J308, J309, J310 U308, U309, U310 U311 B-10 B-10 B-10 B-19 B-22 B-22 B-60 B-61 B-62 B-66 B-67 B-68
B-15, B-16 B-15, B-16 B-15, B-16 B-15, B-16 B-15, B-16 B-15, B-16 B-18 B-19 B-44 B-45 B-49 B-50 B-51 B-52 B-53 B-63 B-65
Voltage-Controlled Resistors
2N4338, 2N4339, 2N4340, 2N4341 VCR2N, VCR4N VCR7N VCR3P VCR11N B-11 B-12 C-8 C-8 C-9 C-10
Pico-Ampere Diodes
DPAD1, DPAD2 DPAD5, DPAD10 PAD1, PAD2, PAD5 C-2 C-2 C-3
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Product
2N3821 2N3822 2N3823 2N3824 2N3954 2N3955 2N3956 2N3957 2N3958 2N3993 2N3993A 2N3994 2N3994A 2N4117 2N4117A 2N4118 2N4118A 2N4119 2N4119A 2N4220 2N4220A 2N4221 2N4221A 2N4222 2N4222A 2N4338 2N4339 2N4340 2N4341 2N4391 2N4392 2N4393 2N4416 2N4416A 2N4856
Page
B-3 B-3 B-4 B-4 B-5 B-5 B-5 B-6 B-6 B-7 B-7 B-8 B-8 B-9 B-9 B-9 B-9 B-9 B-9 B-10 B-10 B-10 B-10 B-10 B-10 B-11 B-11 B-12 B-12 B-13 B-13 B-13 B-14 B-14 B-15
Product
2N4856A 2N4857 2N4857A 2N4858 2N4858A 2N4859 2N4859A 2N4860 2N4860A 2N4861 2N4861A 2N4867 2N4867A 2N4868 2N4868A 2N4869 2N4869A 2N5020 2N5021 2N5114 2N5115 2N5116 2N5397 2N5398 2N5460 2N5461 2N5462 2N5484 2N5485 2N5486 2N5911 2N5912 2N6449 2N6450 2N6451
Page
B-16 B-15 B-16 B-15 B-16 B-15 B-16 B-15 B-16 B-15 B-16 B-17 B-17 B-17 B-17 B-17 B-17 B-18 B-18 B-19 B-19 B-19 B-20 B-20 B-21 B-21 B-21 B-22 B-22 B-22 B-23 B-23 B-24 B-24 B-25
Product
2N6452 2N6453 2N6454 2N6550 DPAD1 DPAD2 DPAD5 DPAD10 IF140 IF140A IF142 IF1320 IF1330 IF1331 IF1801 IF3601 IF3602 IF4500 IF4501 IF4510 IF4511 IF9030 IFN17 IFN40 IFN59 IFN105 IFN112 IFN113 IFN146 IFN147 IFN152 IFN363 IFN421 IFN422 IFN423
Page
B-25 B-26 B-26 B-27 D-2 D-2 D-2 D-2 B-28 B-28 B-29 B-30 B-31 B-32 B-33 B-34 B-35 B-36 B-37 B-38 B-39 B-40 D-2 D-2 D-2 D-2 D-4 D-3 D-5 D-6 D-3 D-3 B-41 B-41 B-41
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A-7

Product
IFN424 IFN425 IFN426 IFN860 IFN5114 IFN5115 IFN5116 IFN5432 IFN5433 IFN5434 IFN5564 IFN5565 IFN5566 IFN5911 IFN5912 IFN6449 IFN6450 IFP44 J108 J109 J110 J110A J111 J112 J113 J174 J175 J176 J177 J201 J202 J203 J204 J210 J211
Page
B-42 B-42 B-42 B-43 B-44 B-44 B-44 B-45 B-45 B-45 B-46 B-46 B-46 B-47 B-47 B-48 B-48 D-3 B-49 B-49 B-50 B-50 B-51 B-51 B-51 B-52 B-52 B-53 B-53 B-54 B-54 B-55 B-55 B-56 B-56
Product
J212 J230 J231 J232 J304 J305 J308 J309 J310 J500 J501 J502 J503 J504 J505 J506 J507 J508 J509 J510 J511 J553 J554 J555 J556 J557 PAD 1 PAD 2 PAD 5 P1086 P1087 SMP 5911 SMP 5912 U290 U291
Page
B-57 B-58 B-58 B-59 B-60 B-60 B-61 B-61 B-62 D-4 D-4 D-4 D-4 D-4 D-4 D-5 D-5 D-5 D-5 D-5 D-5 D-6 D-6 D-6 D-6 D-6 D-3 D-3 D-3 B-63 B-63 B-64 B-64 B-65 B-65
Product
U308 U309 U310 U311 U350 U430 U431 U553 U554 U555 U556 U557 VCR2N VCR4N VCR7N VCR3P VCR11N
Page
B-66 B-66 B-67 B-68 B-69 B-70 B-70 C-7 C-7 C-7 C-7 C-7 C-8 C-8 C-8 C-9 C-10
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01/99
B-1
Semiconductor Databook Section B JFET Data Sheets

These are our most called-for devices. This is certainly not the limit of our capabilities. We can and do manufacture any of the standard registered parts. We also customize any standard or proprietary device to your specifications. Product
2N3821, 2N3822 2N3823, 2N3824 2N3954, 2N3955 2N3956 2N3957, 2N3958 2N3993, 2N3993A 2N3994, 2N3994A 2N4117, 2N4117A 2N4118, 2N4118A 2N4119, 2N4119A 2N4220, 2N4220A 2N4221, 2N4221A 2N4222, 2N4222A 2N4338, 2N4339 2N4340, 2N4341 2N4391, 2N4392 2N4393
Process
NJ32 NJ32 NJ16 NJ16 NJ16 PJ99 PJ99 NJ01 NJ01 NJ01 NJ16 NJ16 NJ32 NJ16 NJ16 NJ132 NJ132
Page
B-3 B-4 B-5 B-5 B-6 B-7 B-8 B-9 B-9 B-9 B-10 B-10 B-10 B-11 B-12 B-13 B-13
Product
2N4416, 2N4416A 2N4856, 2N4857 2N4856A, 2N4857A 2N4858, 2N4859 2N4858A, 2N4859A 2N4860, 2N4861 2N4860A, 2N4861A 2N4867, 2N4867A 2N4868, 2N4868A 2N4869, 2N4869A 2N5020, 2N5021 2N5114, 2N5115 2N5116 2N5397, 2N5398 2N5460, 2N5461 2N5462 2N5484, 2N5485
Process
NJ26 NJ132 NJ132 NJ132 NJ132 NJ132 NJ132 NJ16 NJ16 NJ16 PJ32 PJ99 PJ99 NJ26L PJ32 PJ32 NJ26
Page
B-14 B-15 B-16 B-15 B-16 B-15 B-16 B-17 B-17 B-17 B-18 B-19 B-19 B-20 B-21 B-21 B-22
B-2
01/99
Data Sheet Index
Silicon Junction Field-Effect Transistors

Product
2N5486 2N5911, 2N5912 2N6449, 2N6450 2N6451, 2N6452 2N6453, 2N6454 2N6550 IF140, IF140A IF142 IF1320 IF1330 IF1331 IF1801 IF3601 IF3602 IF4500 IF4501 IF4510 IF4511 IF9030 IFN421, IFN422 IFN423 IFN424, IFN425 IFN426 IFN860 IFN5114, IFN5115 IFN5116 IFN5432, IFN5433 IFN5434
Process
NJ26 NJ30L NJ42 NJ132L NJ132L NJ450 NJ14AL NJ14AL NJ132L NJ132H NJ132H NJ1800DL NJ3600L NJ3600L NJ450L NJ450L NJ450H NJ450H NJ903L NJ01 NJ01 NJ01 NJ01 NJ450L PJ99 PJ99 NJ903 NJ903
Page
B-22 B-23 B-24 B-25 B-26 B-27 B-28 B-29 B-30 B-31 B-32 B-33 B-34 B-35 B-36 B-37 B-38 B-39 B-40 B-41 B-41 B-42 B-42 B-43 B-44 B-44 B-45 B-45
Product
IFN5564, IFN5565 IFN5566 IFN5911, IFN5912 IFN6449, IFN6450 J108, J109 J110, J110A J111, J112, J113 J174, J175 J176, J177 J201, J202 J203, J204 J210, J211 J212 J230, J231 J232 J304, J305 J308, J309 J310 P1086, P1087 SMP5911, SMP5912 U290, U291 U308, U309 U310 U311 U350 U430, U431
Process
NJ72 NJ72 NJ30L NJ42 NJ450 NJ450 NJ132 PJ99 PJ99 NJ16 NJ16 NJ26L NJ26L NJ16 NJ16 NJ26 NJ72 NJ72 PJ99 NJ30L NJ1800D NJ72 NJ72L NJ72L NJ72 NJ72
Page
B-46 B-46 B-47 B-48 B-49 B-50 B-51 B-52 B-53 B-54 B-55 B-56 B-57 B-58 B-59 B-60 B-61 B-62 B-63 B-64 B-65 B-66 B-67 B-68 B-69 B-70
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01/99
B-3
2N3821, 2N3822
N-Channel Silicon Junction Field-Effect Transistor

VHF Amplifiers Small Signal Amplifiers
Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating
50 V 10 mA 300 mW 2mW/C
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current V(BR)GSS IGSS
2N3821 Min 50 0.1 0.1 0.5 2 Max
2N3822 Min 50 0.1 0.1 1 4 6 2 10 Max Unit V nA A V V V V mA nA A
Process NJ32 Test Conditions IG = 1 A, VDS = V VGS = 30V, VDS = V VGS = 30V, VDS = V VDS = 15V, ID = 50 A VDS = 15V, ID = 200 A VDS = 15V, ID = 400 A VDS = 15V, ID = 0.5 nA VDS = 15V, VGS = V VDS = 15V, VGS = 8V VDS = 15V, VGS = 8V TA = 150C TA = 150C
Gate Source Voltage Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Drain Cutoff Current Dynamic Electrical Characteristics Drain Source ON Resistance Common Source Forward Transconductance Common Source Forward Transmittance Common Source Output Conductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Equivalent Short Circuit Input Noise Voltage Noise Figure
VGS VGS(OFF) IDSS ID(OFF) 0.5 4 2.5
rds(on) gfs | Yfs | gos Ciss Crss eN NF 1500 4500 3000 6500 1500 10 6 2 200 5 3000 20 6 2
S S S pF pF
VGS = V, ID = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V RG = 1 M
f = 1 kHz f = 1 kHz f = 100 MHz f = 1 kHz f = 1 MHz f = 1 MHz f = 10 Hz f = 10 Hz
200 nV/Hz 5 dB
TO72 Package
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
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B-4
01/99
2N3823, 2N3824

VHF Amplifiers Small Signal Amplifiers
50 V 10 mA 300 mW 2 mW/C
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Voltage Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Drain Cutoff Current Dynamic Electrical Characteristics Drain Source ON Resistance Common Source Forward Transconductance Common Source Forward Transmittance Common Source Output Conductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Equivalent Short Circuit Input Noise Voltage Noise Figure rds(on) gfs | Yfs | gos Ciss Crss eN NF V(BR)GSS IGSS VGS VGS(OFF) IDSS ID(OFF)
2N3823 Min 30 0.5 0.5 1 4 7.5 8 20 Max
2N3824 Min 50 0.1 0.1 Max Unit V nA A V V mA 0.1 0.1 nA A
Process NJ32 Test Conditions IG = 1 A, VDS = V VGS = 30V, VDS = V VGS = 30V, VDS = V VDS = 15V, ID = 400 A VDS = 15V, ID = 0.5 nA VDS = 15V, VGS = V VDS = 15V, VGS = 8V VDS = 15V, VGS = 8V TA = 150C TA = 150C
250 3500 6500 3200 35 6 2 200 6 6 3
S S S pF pF nV/Hz dB
VGS = V, ID = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V RG = 1 M
f = 1 kHz f = 1 kHz f = 100 MHz f = 1 kHz f = 1 MHz f = 1 MHz f = 10 Hz f = 10 Hz
TO72 Package
Pin Configuration
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01/99
B-5
2N3954, 2N3955, 2N3956
N-Channel Dual Silicon Junction Field-Effect Transistor

Low and Medium Frequency Differential Amplifiers High Input Impedance Amplifiers
Reverse Gate Source & Reverse Gate Drain Voltage Gate Current Total Device Power Dissipation (each side) @ 85C Case Temperature (both sides) Power Derating (both sides)
50 V 50 mA 250 mW 500 mW 4.3 mW/C
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Operating Current Gate Source Voltage Gate Source Cutoff Voltage Gate Source Forward Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics Common Source Forward Transconductance Common Source Output Capacitance Common Source Input Capacitance Drain Gate Capacitance Common Source Reverse Transfer Capacitance Noise Figure Differential Gate Current Saturation Drain Current Ratio Differential Gate Source Voltage Differential Gate Source Voltage with Temperature Transconductance Ratio g fs gos Ciss Cdgo Crss NF | IG1 IG2 | V(BR)GSS IGSS IG VGS VGS(OFF) VGS(F) IDSS
2N3954 Min 50 100 500 50 250 4.2 0.5 1 0.5 4 4.5 2 5 Max
2N3955 Min 50 100 500 50 250 4.2 0.5 1 0.5 4 4.5 2 5 Max
2N3956 Min 50 100 500 50 250 4.2 0.5 1 0.5 4 4.5 2 5 Max Unit V pA nA pA nA V V V V mA
Process NJ16 Test Conditions IG = 1A, VDS = V VGS = 30V, VDS = V VGS = 30V, VDS = V VDS = 20V, ID = 200 A VDS = 20V, ID = 200 A VDS = 20V, ID = 50 A VDS = 20V, ID = 200 A VDS = 20V, IG = 1 nA VDS = V, IG = 1 mA VDS = 20V, VGS = V TA = 125C TA = 125C
1000 1000
3000 35 4 1.5 1.2 0.5 10 1 5 0.8 1
1000 1000
3000 35 4 1.5 1.2 0.5 10
1000 1000
3000 35 4 1.5 1.2 0.5 10
S S S pF pF pF dB nA mV mV/C mV/C
VDS = 20V, VGS = V VDS = 20V, VGS = V VDS = 20V, VGS = V VDS = 20V, VGS = V Vdg = 10V, IS = A VDS = 20V, VGS = V VDS = 20V, VGS = V, Rg = 10 M VDS = 20V, ID = 200A VDS = 20V, VGS = V VDS = 20V, ID = 200A VDS = 20V, ID = 200A VDS = 20V, ID = 200A VDS = 20V, ID = 200A
f = 1 kHz f = 200 MHz f = 1 kHz f = 1 MHz f = 1 MHz f = 1 MHz f = 100 Hz TA = 125C
IDSS1 /IDSS2 0.95

| VGS1 VGS2 | VGS1 VGS2 T
0.95
1 10 2 2.5
0.95
1 15 4 5
TA = 25C to = 55C TA = 25C to = +125C f = 1 kHz
gfs1 /gfs2
0.97
0.97
0.97
TO71 Package
See Section G for Outline Dimensions
Pin Configuration
1 Source, 2 Drain, 3 Gate, 5 Source, 6 Drain, 7 Gate
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B-6
01/99
2N3957, 2N3958

Low and Medium Frequency Differential Amplifiers High Input Impedance Amplifiers
Reverse Gate Source & Reverse Gate Drain Voltage Gate Current Total Device Power Dissipation (each side) @ 85C Case Temperature (both sides) Power Derating (both sides)
50 V 50 mA 250 mW 500 mW 4.3 mW/C
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Operating Current Gate Source Voltage Gate Source Cutoff Voltage Gate Source Forward Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics Common Source Forward Transconductance Common Source Output Conductance Common Source Input Capacitance Drain Gate Capacitance Common Source Reverse Transfer Capacitance Noise Figure Differential Gate Current Saturation Drain Current Ratio Differential Gate Source Voltage Differential Gate Source Voltage with Temperature Transconductance Ratio gfs gos Ciss Cdgo Crss NF | IG1 IG2 |
IDSS1 / IDSS2
| VGS1 VGS2 | VGS1 VGS2 T
2N3957 Min V(BR)GSS IGSS IG VGS VGS(OFF) VGS(F) IDSS 0.5 50 100 500 50 250 4.2 0.5 1 4 4.5 2 5 Max
2N3958 Min 50 100 500 50 250 4.2 0.5 1 0.5 4 4.5 2 5 Max Unit V pA nA pA nA V V V V mA
Process NJ16 Test Conditions IG = 1 A, VDS = V VGS = 30V, VDS = V VGS = 30V, VDS = V VDS = 20V, ID = 200 A VDS = 20V, ID = 200 A VDS = 20V, ID = 50 A VDS = 20V, ID = 200 A VDS = 20V, ID = 1 nA VDS = , IG = 1 mA VDS = 20V, VGS = V TA = 125C TA = 125C
1000 3000 1000 3000 1000 35 4 1.5 1.2 0.5 10 0.9 1 20 6 7.5 0.9 1 0.85 0.85 1000 35 4 1.5 1.2 0.5 10 1 25 8 10 1
S S S pF pF pF dB nA mV mV mV
VDS = 20V, VGS = V VDS = 20V, VGS = V VDS = 20V, VGS = V VDS = 20V, VGS = V VDS = 10V, IS = A VDS = 20V, VGS = V VDS = 20V, VGS = V RG = 10 M VDS = 20V, ID = 200 A VDS = 20V, VGS = V VDS = 20V, ID = 200 A VDS = 20V, ID = 200 A VDS = 20V, ID = 200 A VDS = 20V, ID = 200 A
f = 1 kHz f = 200 MHz f = 1 kHz f = 1 MHz f = 1 MHz f = 1 MHz f = 100 Hz TA = 125C
TA = 25C to 55C TA = 25C to 125C
gfs1 / gfs2
f = 1 kHz
TO71 Package
See Section G for Outline Dimensions 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375
Pin Configuration
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01/99
B-7
2N3993, 2N3993A
P-Channel Silicon Junction Field-Effect Transistor

Choppers High Speed Commutators
25 V 10 mA 300 mW 2.4 mW/C
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Drain Reverse Current Drain Cutoff Current Dynamic Electrical Characteristics Drain Source ON Resistance Common Source Forward Transmittance Common Source Input Capacitance Common Source Reverse Transfer Capacitance rds(on) | Yfs | Ciss Crss V(BR)GSS VGS(OFF) IDSS IDGO ID(OFF)
2N3993 Min 25 4 10 1.2 1.2 1.2 1 9.5 Max
2N3993A Min 25 4 10 1.2 1.2 1.2 1 9.5 Max Unit V V mA nA A nA A
Process PJ99 Test Conditions IG = 1 A, VDS = V VDS = 10V, ID = 1 A VDS = 10V, VGS = V VDG = 15V, IS = A VDG = 15V, IS = A VDS = 10V, VGS = 10 V VDS = 10V, VGS = 10 V TA = 150C TA = 150C
150 6 12 16 4.5 7
150 12 12 3
mS pF pF
VGS = V, ID = A VDS = 10V, VGS = V VDS = 10V, VGS = V VDS = , VGS = 10V
f = 1 kHz f = 1 kHz f = 1 MHz f = 1 MHz
TO72 Package
Pin Configuration
1 Source, 2 Gate, 3 Drain, 4 Case
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B-8
01/99
2N3994, 2N3994A

Choppers High Speed Commutators
Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating
25 V 25 V 10 mA 300 mW 2.4 mW/C
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Drain Reverse Current Drain Cutoff Current Dynamic Electrical Characteristics Drain Source ON Resistance Common Source Forward Transmittance Common Source Input Capacitance Common Source Reverse Transfer Capacitance rds(on) | Yfs | Ciss Crss V(BR)GSS VGS(OFF) IDSS IDGO ID(OFF)
2N3994 Min 25 1 2 1.2 1.2 1.2 1 5.5 Max
2N3994A Min 25 1 2 1.2 1.2 1.2 1 5.5 Max Unit V V mA nA A nA A
Process PJ99 Test Conditions IG = 1 A, VDS = V VDS = 10V, ID = 1 A VDS = 10V, VGS = V VDG = 15V, IS = A VDG = 15V, IS = A VDS = 10V, VGS = 10V VDS = 10V, VGS = 10V TA = 150C TA = 150C
300 4 10 16 5 5
300 10 12 3.5
mS pF pF
VGS = V, ID = A VDS = 10V, VGS = V VDS = 10V, VGS = V VDS = , VGS = 10V
TO72 Package
Pin Configuration
1 Source, 2 Gate, 3 Drain, 4 Case
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01/99
B-9
2N4117, 2N4117A, 2N4118, 2N4118A, 2N4119, 2N4119A

Audio Amplifiers Ultra-High Input Impedance Amplifiers
Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating (to 175C)
40 V 50 mA 300 mW 2 mW/C
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current 2N4117, 2N4118, 2N4119 2N4117A, 2N4118A, 2N4119A Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) 2N4117, 2N4118, 2N4119 2N4117A, 2N4118A, 2N4119A Dynamic Electrical Characteristics Common Source Forward Transconductance Common Source Output Conductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance gfs gos Ciss Crss V(BR)GSS IGSS VGS(OFF) IGSS
2N4117 2N4117A Min 40 10 1 0.6 0.03 0.015 1.8 0.09 0.09 Max
2N4118 2N4118A Min 40 10 1 1 0.08 0.08 3 0.24 0.24 Max
2N4119 2N4119A Min 40 10 1 2 0.2 0.2 6 0.6 0.6 Max Unit V pA pA V mA mA
Process NJ01 Test Conditions IG = 1A, VDS = V VGS = 20V, VDS = V VGS = 20V, VDS = V VDS = 10V, ID = 1 nA VDS = 10V, VGS = V VDS = 10V, VGS = V
70
210 3 3 1.5
80
250 5 3 1.5
100
330 10 3 1.5
S S pF pF
VDS = 10V, VGS = V VDS = 10V, VGS = V VDS = 10V, VGS = V VDS = 10V, VGS = V
TO72 Package
Pin Configuration
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B-10
01/99
2N4220, 2N4220A, 2N4221, 2N4221A, 2N4222, 2N4222A

Mixers Oscillators VHF Amplifiers Small Signal Amplifiers
Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating (to 150 C)
30 V 10 mA 300 mW 2 mW/C
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Voltage Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics Common Source Forward Transconductance Common Source Forward Transmittance Common Source Output Conductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Noise Figure 2N4220A, 2N4221A, 2N4222A gfs | Yfs | gos Ciss Crss NF V(BR)GSS IGSS VGS VGS(OFF) IDSS
2N4220 2N4220A NJ16 Min 30 0.1 0.1 0.5 (50) 0.5 Max
2N4221 2N4221A NJ16 Min 30 0.1 0.1 Max
2N4222 2N4222A NJ32 Min 30 0.1 0.1 Max Unit V nA A V A V mA
Process Test Conditions IG = 1A, VDS = V VGS = 15V, VDS = V VGS = 15V, VDS = V VDS = 15V, ID = ( ) VDS = 15V, ID = 0.1 nA VDS = 15V, VGS = V TA = 150C
2.5 1 5 2 6 (50) (200) (200) (500) (500) 4 3 2 6 6 5 8 15
1000 750
4000
2000 750
5000
2500 750
6000
S S
VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V RG = 1 M
f = 1 kHz f = 100 MHz f = 1 kHz f = 1 MHz f = 1 MHz f = 100 MHz
10 6 2 2.5
20 6 2 2.5
40 6 2 2.5
S pF pF dB
TO72 Package
Pin Configuration
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01/99
B-11
2N4338, 2N4339

Audio Amplifiers Small Signal Amplifiers Voltage-Controlled Resistors Current Limiters & Regulators
50 V 50 mA 300 mW 2mW/C
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Drain Cutoff Current Dynamic Electrical Characteristics Drain Source ON Resistance Common Source Forward Transconductance Common Source Output Conductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Noise Figure rds(on) gfs gos Ciss Crss NF V(BR)GSS IGSS VGS(OFF) IDSS ID(OFF)
2N4338 Min 50 100 100 0.3 0.2 1 0.6 0.05 ( 5) Max
2N4339 Min 50 100 100 0.6 1.8 0.5 1.5 0.05 ( 5) Max Unit V pA nA V mA nA V
Process NJ16 Test Conditions IG = 1 A, VDS = V VGS = 30V, VDS = V VGS = 30V, VDS = V VDS = 15V, ID = 0.1 A VDS = 15V, VGS = V VDS = 15V, VGS = ( ) TA = 150C
2500
1700
S S pF pF dB
VGS = V, ID = A VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V RG = 1 M, BW = 200 Hz
f = 1 kHz f = 1 kHz f = 1 kHz f = 1 MHz f = 1 MHz f = 1 kHz
600 1800 800 2400 5 7 3 1 15 7 3 1
TO18 Package
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
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B-12
01/99
2N4340, 2N4341

Small Signal Amplifiers Current Regulators Voltage-Controlled Resistors
50 V 50 mA 300 mW 2mW/C
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Drain Cutoff Current Dynamic Electrical Characteristics Drain Source ON Resistance Common Source Forward Transconductance Common Source Output Conductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Noise Figure rds(on) gfs gos Ciss Crss NF V(BR)GSS IGSS VGS(OFF) IDSS ID(OFF)
2N4340 Min 50 100 100 1 1.2 3 3.6 0.05 ( 5) Max
2N4341 Min 50 100 100 2 3 6 9 Max Unit V pA nA V mA
Process NJ16 Test Conditions IG = 1 A, VDS = V VGS = 30V, VDS = V VGS = 30V, VDS = V VDS = 15V, ID = 0.1 A VDS = 15V, VGS = V VDS = 15V, VGS = ( ) TA = 150C
0.07 nA ( 10) V
1500
800
S S pF pF dB
VGS = V, ID = A VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V RG = 1 M, BW = 200 Hz
f = 1 kHz f = 1 kHz f = 1 kHz f = 1 MHz f = 1 MHz f = 1 kHz
1300 3000 2000 4000 30 7 3 1 60 7 3 1
TO18 Package
Surface Mount
SMP4340, SMP4341
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375
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01/99
B-13
2N4391, 2N4392, 2N4393

Low On Resistance Analog Switches Choppers Commutators
40 V 50 mA 1.8 W 12 mW/C
At 25C free air temperature Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Gate Source Forward Voltage Drain Saturation Current (Pulsed) V(BR)GSS IGSS VGS(OFF) VGS(F) IDSS
2N4391 Min 40 100 200 4 50 10 1 150 Max
2N4392 Min 40 100 200 2 25 5 1 75 Max
2N4393 Min 40 100 200 0.5 5 3 1 30 100 200 Max Unit V pA nA V V mA pA nA pA nA pA nA 0.4 V V V 100 pF pF pF pF
Process NJ132 Test Conditions IG = 1A, VDS = V VGS = 20V, VDS = V VGS = 20V, VDS = V VDS = 20V, ID = 1 nA IG = 1 mA, VDS = V VDS = 20V, VGS = V VDS = 20V, VGS = 5V VDS = 20V, VGS = 5V VDS = 20V, VGS = 7V VDS = 20V, VGS = 7V VDS = 20V, VGS = 12V VDS = 20V, VGS = 12V VGS = V, ID = 3 mA VGS = V, ID = 6 mA VGS = V, ID = 12 mA VGS = V, ID = 1 mA TA = 150C TA = 150C TA = 150C TA = 150C
Drain Cutoff Current
ID(OFF) 100 200
100 200
Drain Source ON Voltage Static Drain Source ON Resistance Dynamic Electrical Characteristics Drain Source ON Resistance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Switching Characteristics Turn ON Delay Time Rise Time Turn OFF Delay Time Fall Time
VDS(ON) 0.4 rDS(ON) 30
0.4 60
rds(on) Ciss Crss
30 14
60 14 3.5
100 14 3.5
VGS = V, ID = A VDS = 20V, VGS = V VDS = V, VGS = 5V VDS = V, VGS = 7V VDS = V, VGS = 12V
f = 1 kHz f = 1 kHz f = 1 kHz f = 1 kHz f = 1 kHz
3.5
td(on) tr td(off) tf
15 5 20 15
15 5 35 20
15 5 50 30
ns ns ns ns
VDD = 10V, VGS(ON) = V 2N4391 2N4392 2N4393 ID(ON) 12 6 7 3 5 mA V VGS(OFF) 12
TO18 Package
Surface Mount
SMP4391, SMP4392, SMP4393
Pin Configuration
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B-14
01/99
2N4416, 2N4416A

Mixers VHF Amplifiers
Reverse Gate Source & Reverse Gate Drain Voltage Gate Current Continuous Device Dissipation Power Derating
2N4416
30 V 10 mA 300 mW 2 mWC
2N4416A
35 V 10 mA 300 mW 2 mW/C
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics Common Source Forward Transconductance Common Source Output Conductance Common Source Input Capacitance Common Source Output Capacitance Common Source Reverse Transfer Capacitance Common Source Input Conductance Common Source Input Susceptance Common Source Output Susceptance Common Source Power Gain Noise Figure gfs V(BR)GSS IGSS VGS(OFF) IDSS
2N4416 Min 30 0.1 0.1 6 5 15 Max
2N4416A Min 35 0.1 0.1 2.5 5 6 15 Max Unit V nA A V mA
Process NJ26 Test Conditions IG = 1A, VDS = V VGS = 20V, VDS = V VGS = 20V, VDS = V VDS = 15V, ID = 1 nA VDS = 15V, VGS = V TA = 150C
4500 7500 4500 7500 4000 50 75 100 4 2 0.8 100 1000 2500 10000 1000 4000 18 10 2 4 18 10 2 4 4000 50 75 100 4 2 0.8 100 1000 2500 1000 4000
S S S S S pF pF pF S S S S S dB dB dB dB
VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, ID = 5mA VDS = 15V, ID = 5mA VDS = 15V, ID = 5mA RG = 1k
f = 1 kHz f = 400 MHz f = 1 kHz f = 100 MHz f = 400 MHz f = 1 MHz f = 1 MHz f = 1 MHz f = 100 MHz f = 400 MHz f = 100 MHz f = 400 MHz f = 100 MHz f = 400 MHz f = 100 MHz f = 400 MHz f = 100 MHz f = 400 MHz
gos Ciss Coss Crss gis bis bos Gps NF
10000 S
TO72 Package
Surface Mount
SMP4416, SMP4416A
Pin Configuration
Note: rf parameters guaranteed, but not 100% tested.

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01/99
B-15
2N4856, 2N4857, 2N4858, 2N4859, 2N4860, 2N4861

Choppers Commutators Analog Switches
Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Device Dissipation Power Derating Continuous Forward Gate Current
2N4856, 2N4857, 2N4858 40 V 40 V 1.8 W 10 mW/C 50 mA
2N4859, 2N4860, 2N4861 30 V 30 V 1.8 W 10 mW/C 50 mA
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage 2N4856, 2N4857, 2N4858 2N4859, 2N4860, 2N4861 Gate Reverse Current 2N4856, 2N4857, 2N4858 Gate Reverse Current 2N4859, 2N4860, 2N4861 Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Drain Cutoff Current Drain Source ON Voltage Dynamic Electrical Characteristics Common Source ON Resistance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Switching Characteristics Turn ON Delay Time td(on) rds(on) Ciss Crss V(BR)GSS
2N4856 2N4859 Min Max 40 30 IGSS IGSS VGS(OFF) IDSS ID(OFF) VDS(ON) 4 50 250 500 0.75 (20) 250 500 250 500 10
2N4857 2N4860 Min Max 40 30 250 500 250 500 2 20 6 100 250 500 0.5 (10)
2N4858 2N4861 Min Max 40 30 250 500 250 500 0.8 8 4 80 250 500 0.5 (5) Unit V V pA nA pA nA V mA pA nA V (mA)
Process NJ132 Test Conditions IG = 1 A, VDS = V IG = 1 A, VDS = V VGS = 20V, VDS = V VGS = 20V, VDS = V VGS = 15V, VDS = V VGS = 15V, VDS = V VDS = 15V, ID = 0.5 nA VDS = 15V, VGS = V VDS = 15V, VGS = 10V VDS = 15V, VGS = 10V VGS = V, ID = ( ) TA = 150C TA = 150C TA = 150C
25 18 8
40 18 8
60 18 8
pF pF
VGS = V, ID = A VDS = V, VGS = 10V VDS = V, VGS = 10V
f = 1 kHz f = 1 MHz f = 1 MHz
6 (20) [10] 3 (20) [10] 25 (20) [10]
6 (10) [ 6] 4 (10) [ 6] 50 (10) [ 6]
10 (5) [ 4] 10 (5) [ 4] 100 (5) [ 4]
ns (mA) [V] ns (mA) [V] ns (mA) [V]
VDD = 10V, VGS = V

ID(ON) = ( ) VGS(OFF) = [ ]
Rise Time
tr
Turn OFF Delay Time
td(off)
(2N4856, 2N4859) RL = 465 (2N4857, 2N4860) RL = 953 (2N4858, 2N4861) RL = 1910
TO18 Package
Surface Mount
SMP4856, SMP4857, SMP4858, SMP4859, SMP4860, SMP4861
Pin Configuration
1 Source, 2 Drain, 3 Gate &Case
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B-16
01/99
2N4856A, 2N4857A, 2N4858A, 2N4859A, 2N4860A, 2N4861A

Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Device Dissipation Continuous Forward Gate Current Power Derating
2N4856A, 2N4857A, 2N4858A 40 V 40 V 1.8 W 50 mA 10 mA/C
2N4859A, 2N4860A, 2N4861A 30 V 30 V 1.8 W 50 mA 10 mA/C
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage 2N4856A, 2N4857A, 2N4858A Gate Source Breakdown Voltage 2N4859A, 2N4860A, 2N4861A Gate Reverse Current 2N4856A, 2N4857A, 2N4858A Gate Reverse Current 2N4859A, 2N4860A, 2N4861A Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Drain Cutoff Current Drain Source ON Voltage Dynamic Electrical Characteristics Common Source ON Resistance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Switching Characteristics Turn ON Delay Time td(on) rds(on) Ciss Crss V(BR)GSS V(BR)GSS IGSS IGSS VGS(OFF) IDSS ID(OFF) VDS(ON)
2N4856A 2N4859A Min Max 40 30 250 500 250 500 4 50 250 500 0.75 (20) 10
2N4857A 2N4860A Min Max 40 30 250 500 250 500 2 20 6 100 250 500 0.5 (10)
2N4858A 2N4861A Min Max 40 30 250 500 250 500 0.8 8 4 80 250 500 0.5 (5) Unit V V pA nA pA nA V mA pA nA V (mA)
Process NJ132 Test Conditions IG = 1 A, VDS = V IG = 1 A, VDS = V VGS = 20V, VDS = V VGS = 20V, VDS = V VGS = 15V, VDS = V VGS = 15V, VDS = V VDS = 15V, ID = 0.5 nA VDS = 15V, VGS = V VDS = 15V, VGS = 10V VDS = 15V, VGS = 10V VGS = V, ID = ( ) TA = 150C TA = 150C TA = 150C
25 10 4
40 10 3.5
60 10 3.5
pF pF
5 (20) [10] 3 (20) [10] 25 (20) [10]
6 (10) [ 6] 4 (10) [ 6] 40 (10) [ 6]
8 (5) [ 4] 8 (5) [ 4] 80 (5) [ 4]
ns (mA) [V] ns (mA) [V] ns (mA) [V]
VDD = 10V, VGS = V

ID(ON) = ( ) VGS(OFF) = [ ]
Rise Time
tr
Turn OFF Delay Time
td(off)
(2N4856A, 2N4859A) RL = 464 (2N4857A, 2N4860A) RL = 953 (2N4858A, 2N486A1) RL = 1910
TO18 Package
Surface Mount
SMP4856A, SMP4857A, SMP4858A, SMP4859A, SMP4860A, SMP4861A
Pin Configuration
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01/99
B-17
2N4867, 2N4867A, 2N4868, 2N4868A, 2N4869, 2N4869A

Audio Amplifiers
Reverse Gate Source & Reverse Gate Drain Voltage Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range
40 V 50 mA 300mW 1.7 mW/C 65C to + 200C
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics Common Source Forward Transconductance Common Source Output Conductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Equivalent Short Circuit Input Noise Voltage Noise Figure gfs gos Ciss Crss eN V(BR)GSS IGSS VGS(OFF) IDSS
2N4867 2N4867A Min 40 0.25 0.25 0.7 0.4 2 1.2 Max
2N4868 2N4868A Min 40 0.25 0.25 1 1 3 3 Max
2N4869 2N4869A Min 40 0.25 0.25 1.8 2.5 5 7.5 Max Unit V nA A V mA
Process NJ16 Test Conditions IG = 1A, VDS = V VGS = 30V, VDS = V VGS = 30V, VDS = V VDS = 20V, ID = 1 A VDS = 20V, VGS = V TA = 150C
700
2000 1.5 25 5 20 10 1
1000
3000 4 25 5 20 10 1
1300
4000 10 25 5 20 10 1
S S pF pF
nV/HZ nV/HZ
VDS = 20V, VGS = V VDS = 20V, VGS = V VDS = 20V, VGS = V VDS = 20V, VGS = V VDS = 10V, VGS = V VDS = 10V, VGS = V VDS = 10V, VGS = V
f = 1 kHz f = 1 kHz f = 1 MHz f = 1 MHz f = 10 Hz f = 1 kHz f = 1 kHz
NF
dB
(2N4867, 68, 69) RG = 20 k (2N4867A, 68A, 69A) RG = 5 k
TO72 Package
Surface Mount
SMP4867, SMP4867A, SMP4868, SMP4868A, SMP4869, SMP4869A
Pin Configuration
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B-18
01/99
2N5020, 2N5021

Analog Switches
Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range
50 V 50 mA 500 mW 4 mW/C 65C to + 200C
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics Common Source Forward Transconductance Common Source Output Conductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance gfs gos Ciss Crss V(BR)GDO IGSS VGS(OFF) IDSS
2N5020 Min 25 1 0.3 1.5 Max
2N5021 Min 25 1 0.5 1 2.5 3.5 Max Unit V nA V mA
Process PJ32 Test Conditions IG = 1A, VDS = V VGS = 15V, VDS = V VDS = 15V, ID = 1 nA VDS = 15V, VGS = V
0.3 1.2
3.5 20 25 7
1.5
6 20 25 7
mS S pF pF
VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V f = 1 MHz f = 1 MHz
TO18 Package
Surface Mount
SMP5020, SMP5021
Pin Configuration
1 Source 1, 2 Gate & Case, 3 Drain 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375
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01/99
B-19
2N5114, 2N5115, 2N5116

Analog Switches
Reverse Gate Source & Reverse Gate Drain Voltage Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range
40 V 50 mA 500mW 3 mW/C 65C to + 200C
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Gate Source Forward Voltage Drain Saturation Current (Pulsed) V(BR)GSS IGSS VGS(OFF) VGS(F) IDSS
2N5114 Min 30 500 1 5 30 10 1 90 Max
2N5115 Min 30 500 1 3 6 1 15 60 Max
2N5116 Min 30 500 1 1 4 1 5 25 Max Unit V pA A V V mA mA pA A
Process PJ99 Test Conditions IG = 1A, VDS = V VGS = 20V, VDS = V VGS = 20V, VDS = V VDS = 15V, IG = 1 nA VDS = V, IG = 1 mA VGS = V, VDS = 18V VGS = V, VDS = 15V VDS = 15V, VGS = 12 V VDS = 15V, VGS = 12 V VDS = 15V, VGS = 7V VDS = 15V, VGS = 7V VDS = 15V, VGS = 5V VDS = 15V, VGS = 5V VGS = V, ID = 15 mA VGS = V, ID = 7 mA VGS = V, ID = 3 mA VGS = V, ID = 1 mA TA = 150C TA = 150C TA = 150C TA = 150C
500 1 Drain Cutoff Current ID(OFF) 500 1 500 1 1.3 Drain Source ON Voltage Static Drain Source ON Resistance Dynamic Electrical Characteristics Drain Source ON Resistance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Switching Characteristics Turn ON Delay Time Rise Time Turn OFF Delay Time Fall Time td(on) tr td(off) tf 6 10 6 15 10 20 8 30 25 35 20 60 rds(on) Ciss Crss 75 25 7 7 7 100 25 150 27 VDS(ON) rDS(ON) 75 0.8 0.6 100 150
pA A pA A V V V pF pF pF pF
VGS = V, ID = A VDS = 15V, VGS = V VDS = V, VGS = 12V VDS = V, VGS = 7 V VDS = V, VGS = 5V
VDD VGG RL RG ID(ON) 10 20 130 100 15 6 12 910 220 7
f = 1 kHz f = 1 MHz f = 1 MHz f = 1 MHz f = 1 MHz
2N5114 2N5115 2N5116 ns ns ns ns

6 8 2000 390 3 V V mA
TO18 Package
Pin Configuration
1 Source 1, 2 Gate & Case, 3 Drain
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B-20
01/99
2N5397, 2N5398

Low-Noise High Power Gain High Transconductance Mixers Oscillators VHF Amplifiers
Reverse Gate Source & Reverse Gate Drain Voltage Drain Source Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating
25 V 25 V 10 mA 300 mW 1.7 mW/C
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Source Forward Voltage Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics Common Source Forward Transconductance Common Source Forward Transfer Admittance Common Source Output Conductance Common Source Input Admittance Common Source Input Conductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance gfs | Yfs | | gos | | Yos | gis Ciss Crss V(BR)GSS VGS(F) IGSS VGS(OFF) IDSS
2N5397 Min 25 1 0.1 0.1 1 10 6 30 Max
2N5398 Min 25 1 0.1 0.1 1 5 6 40 Max Unit V V nA A V mA
Process NJ26L Test Conditions IG = 1 A, VDS = V IG = 1 mA, VDS = V VGS = 15V, VDS = V VGS = 15V, VDS = V VDS = 10V, ID = 1 nA VDS = 10V, VGS = V TA = 150C
5.5 6
9 10 0.4 0.2 2 5 1.2
5 5.5
10 10 0.5 0.4 3 5.5 1.3
mS mS mS mS mS pF pF
VDG = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDG = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDG = 10V, ID = 10 mA VDG = 15V, VGS = V VDG = 15V, VGS = V
f = 450 MHz f = 1 kHz f = 450 MHz f = 1 kHz f = 450 MHz f = 1 kHz f = 1 kHz
TO72 Package
Surface Mount
SMP5397, SMP5398
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375
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01/99
B-21
2N5460, 2N5461, 2N5462

Audio Amplifiers General Purpose Amplifiers
Absolute maximum ratings at 25C
Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating 40 V 10 mA 310 mW 2.8 mW/C
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Gate Source Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics Drain Source ON Resistance
Common Source Forward Transadmittance
2N5460 Min V(BR)GSS IGSS VGS(OFF) VGS IDSS 1 5 0.75 0.8 40 5 1 6 4.5 Max
2N5461 Min 40 5 1 1 0.8 2 7.5 4.5 Max
2N5462 Min 40 5 1 1.8 9 Max Unit V nA A V V V 1.5 6 16 V mA 4
Process PJ32 Test Conditions IG = 10A, VDS = V VGS = 20V, VDS = V VGS = 20V, VDS = V VDS = 15V, ID = 1 A VDS = 15V, ID = 100 A VDS = 15V, ID = 200 A VDS = 15V, ID = 400 A VDS = 15V, VGS = V TA = 100C
rds(on) | Yfs | | Yos | Ciss Crss eN NF 1
2 4 75 7 2 2.5 115 1.5
0.8 5 75 7 2 2.5 115 2
0.4 6 75 7 2 2.5
k mS S pF pF dB
VGS = V, ID = A VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V, RG = 1M
f = 1 kHz f = 1 kHz f = 1 kHz f = 1 MHz f = 1 MHz f = 100 Hz, BW = 1 Hz f = 100 Hz
Common Source Output Admittance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Equivalent Short Circuit Input Noise Voltage Noise Figure
115 nV/Hz
TO226AA Package
Surface Mount
SMP5460, SMP5461, SMP5462
Pin Configuration
1 Drain, 2 Source, 3 Gate 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375
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B-22
01/99
2N5484, 2N5485, 2N5486

VHF/UHF Amplifiers
Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Device Power Dissipation Power Derating
25 V 25 V 360 mW 3.27 mW/C
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics Forward Transconductance
Common Source Forward Transadmittance
2N5484 Min V(BR)GSS IGSS VGS(OFF) IDSS 0.3 1 25 1 0.2 3 5 Max
2N5485 Min 25 1 0.2 0.5 4 4 10 Max
2N5486 Min 25 1 0.2 2 8 6 20 Max Unit V nA A V mA
Process NJ26 Test Conditions IG = 1A, VDS = V VGS = 20V, VDS = V VGS = 20V, VDS = V VDS = 15V, ID = 10 nA VDS = 15V, VGS = V TA = 100C
Re(Yfs) Yfs Re(Yis) Re(Yos) Yos Ciss Crss Coss
2500 3000 3000 6000 100 1000 75 100 50 5 1 2 60 5 1 2 100 75 5 1 2 1000 3500 7000 3500 4000 8000
S S S S S S S S pF pF pF
VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V
f = 100 MHz f = 400 MHz f = 1 kHz f = 100 MHz f = 400 MHz f = 100 MHz f = 400 MHz f = 1 MHz f = 1 MHz f = 1 MHz f = 1 MHz
Input Admittance Output Conductance Common Source Output Admittance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Output Capacitance
TO226AA Package
Surface Mount
SMP5484, SMP5485, SMP5486
Pin Configuration
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01/99
B-23
2N5911, 2N5912
Dual N-Channel Silicon Junction Field-Effect Transistor

Wideband Differential Amplifiers
Continuous Forward Gate Current Total Device Power Dissipation Power Derating Storage Temperature Range
50 mA 500 mW 4 mWC 65C to + 200C
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Operating Current Gate Source Cutoff Voltage Gate Source Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics Common Source Forward Transconductance Common Source Output Conductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Equivalent Short Circuit Input Noise Voltage Noise Figure Differential Gate Current Saturation Drain Current Ratio Differential Gate Source Voltage gfs gos Ciss Crss eN NF IG1 IG2
IDSS1 / IDSS2
| VGS1 VGS2 |
2N5911 Min V(BR)GSS IGSS IG VGS(OFF) VGS IDSS 1 0.3 7 25 100 250 100 100 5 4 40 Max
2N5912 Min 25 100 250 100 100 1 0.3 7 5 4 40 Max Unit V pA nA pA nA V V mA
Process NJ30L or NJ36D Test Conditions IG = 1 A, VDS = V VGS = 15V, VDS = V VGS = 15V, VDS = V VDG = 10V, ID = 5 mA VDG = 10V, ID = 5 mA VDS = 10V, ID = 1 nA VDS = 10V, ID = 5 mA VDS = 10V, VGS = V TA = 125C TA = 150C
5000 10000 5000 10000 5000 10000 5000 10000 100 150 5 1.2 20 1 20 0.95 1 10 20 20 0.9 1 0.85 0.95 100 150 5 1.2 20 1 20 1 15 40 40 1
S S S S pF pF nV/Hz dB nA mV mV mV
VDG = 10V, ID = 5 mA VDG = 10V, ID = 5 mA VDG = 10V, ID = 5 mA VDG = 10V, ID = 5 mA VDG = 10V, ID = 5 mA VDG = 10V, ID = 5 mA VDG = 10V, ID = 5 mA VDG = 10V, ID = 5 mA RG = 100 K VDG = 10V, ID = 5 mA VDG = 20V, VGS = V VDG = 10V, ID = 5 mA VDG = 10V, ID = 5 mA VDG = 10V, ID = 5 mA VDG = 10V, ID = 5 mA
f = 1 kHz f = 100 MHz f = 1 kHz f = 100 MHz f = 1 MHz f = 1 MHz f = 10 kHz f = 10 kHz TA = 125C
Gate Source Voltage Differential Drift Transconductance Ratio
VGS1 VGS2 T
TA = 25C, TB = 125C TA = 55C, TB = 25C
gfs1 / gfs2
f = 1 kHz
SOIC-8 Package
TO78 Package
Surface Mount
SMP5911, SMP5912
Pin Configuration
1 Source 1, 2 Drain 1, 3 Gate 1, 4 N/C, 5 Source 2, 6 Drain 2, 7 Gate 2, 8 Omitted
Pin Configuration
1 Source 1, 2 Drain 1, 3 Gate 1, 4 Case, 5 Source 2, 6 Drain 2, 7 Gate 2, 8 Omitted 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375
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B-24
01/99
2N6449, 2N6450

High Voltage
2N6449 2N6450 300 V 200 V 300 V 200 V 10 mA 10 mA 800 mW 800 mW 6.4 mW/C 6.4 mW/C
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage V(BR)GSS
2N6449 Min 300 100 Max
2N6450 Min 200 100 Max Unit V nA nA A 100 A V mA 2 2 15 10
Process NJ42 Test Conditions IG = 10 A, VDS = V VGS = 150V, VDS = V VGS = 100V, VDS = V VGS = 150V, VDS = V VGS = 100V, VDS = V VDS = 30V, ID = 4 nA VDS = 30V, VGS = V TA = 150C TA = 150C
Gate Reverse Current
IGSS
100 2 2 15 10
Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics Common Source Forward Transfer Admittance Common Source Output Conductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance
VGS(OFF) IDSS
Yfs Yos Ciss Crss
0.5
3 100 20 2.5
0.5
3 100 20 2.5
mS S pF pF
TO39 Package
Pin Configuration
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01/99
B-25
2N6451, 2N6452

Audio Amplifiers Low-Noise, High Gain Amplifiers Low-Noise Preamplifiers
2N6451 Min 20 0.1 Max
2N6452 Min 25 0.5 Max Unit V nA nA A 1 A V mA
Process NJ132L Test Conditions IG = 1 A, VDS = V VGS = 10V, VDS = V VGS = 15V, VDS = V VGS = 10V, VDS = V VGS = 15V, VDS = V VDS = 10V, ID = 0.5 nA VDS = 10V, VGS = V TA = 125C TA = 125C
IGSS
0.2 0.5 3.5 0.5 3.5 5 20 5 20
Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics Common Source Forward Transmittance Common Source Output Conductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Equivalent Short Circuit Input Noise Voltage Noise Figure
VGS(OFF) IDSS
| Yfs | | Yos | Ciss Crss eN NF
15
30 50 25 5 5 3 1.5
15
30 50 25 5
mS mS S S pF pF pF pF
VDS = 10V, ID = 5 mA VDS = 10V, ID = 15 mA VDS = 10V, ID = 5 mA VDS = 10V, ID = 15 mA VDS = 10V, ID = 5 mA VDS = 10V, ID = 15 mA VDS = 10V, ID = 5 mA VDS = 10V, ID = 15 mA VDS = 10V, ID = 5 mA VDS = 10V, ID = 5 mA VDS = 10V, ID = 5 mA RG = 10 k
f = 1 kHz f = 1 kHz f = 1 kHz f = 1 kHz f = 1 kHz f = 1 kHz f = 1 kHz f = 1 kHz f = 10 kHz f = 1 kHz f = 10 Hz
10 nV/Hz 8 2.5
nV/Hz
dB
TO72 Package
Pin Configuration
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B-26
01/99
2N6453, 2N6454

Audio Amplifiers Low-Noise, High Gain Amplifiers Low-Noise Preamplifiers
2N6453 Min 20 0.1 Max
2N6454 Min 25 0.5 Max Unit V nA nA A 1 A V mA
Process NJ132L Test Conditions IG = 1 A, VDS = V VGS = 10V, VDS = V VGS = 15V, VDS = V VGS = 10V, VDS = V VGS = 15V, VDS = V VDS = 10V, ID = 0.5 nA VDS = 10V, VGS = V TA = 125C TA = 125C
IGSS
0.2 0.75 5 0.75 5 15 50 15 50
Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics Common Source Forward Transmittance Common Source Output Conductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Equivalent Short Circuit Input Noise Voltage Noise Figure
VGS(OFF) IDSS
| Yfs | | Yos | Ciss Crss eN NF
mS 20 40 100 25 5 5 3 1.5 20 40 100 25 5 8 2.5 mS S S pF pF pF pF nV/Hz dB 10 nV/Hz
VDS = 10V, ID = 5 mA VDS = 10V, ID = 15 mA VDS = 10V, ID = 5 mA VDS = 10V, ID = 15 mA VDS = 10V, ID = 5 mA VDS = 10V, ID = 15 mA VDS = 10V, ID = 5 mA VDS = 10V, ID = 15 mA VDS = 10V, ID = 5 mA VDS = 10V, ID = 5 mA VDS = 10V, ID = 5 mA RG = 10 k
f = 1 kHz f = 1 kHz f = 1 kHz f = 1 kHz f = 1 kHz f = 1 kHz f = 1 kHz f = 1 kHz f = 10 kHz f = 1 kHz f = 10 Hz
TO72 Package
Pin Configuration
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01/99
B-27
2N6550

Low-Noise, High Gain Amplifier
Absolute maximum ratings at TA =25C
Reverse Gate Source & Reverse Gate Drain Voltage Continuious Forward Gate Current Continuous Device Power Dissipation Power Derating Junction Temperature (Operating & Storage)
20 V 50 mA 400 mW 2.3 mW/C 65C to +200C
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Leakage Current
Zero Gate Voltage Drain Current (Pulsed)
2N6550 Min V(BR)GSS IGSS IDSS VGS(OFF) 10 0.3 100 20 3 0.1 250 3 Typ Max Unit V nA A mA V
Process NJ450L Test Conditions IG = 10 A, VDS = V VGS = 10V, VDS = V VGS = 10V, VDS = V VDS = 10V, VGS = V VDS = 10V, ID = 0.1 mA TA = 85C
Gate Source Cutoff Voltage Dynamic Electrical Characteristics Transconductance Common Source Output Conductance Common Source Input Capacitance
gfs |Yos | Ciss
25 30 10 1.4
6
150 150 35 20 2
10
mS S pF pF
nV/Hz nV/Hz Vrms pA/Hz
VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = 10V, VDS = V VDS = 5V, ID = 10 mA VDS = 5V, ID = 10 mA VDS = 5V, ID = 10 mA RS < 100 K
f = 1 kHz f = 1 kHz f = 140 kHz f = 140 kHz f = 1 kHz f = 10 Hz f = 10 kHz to 20 kHz f = 1 kHz
Common Source Reverse Transfer Capacitance Crss
Equivalent Short Circuit Input Noise Voltage
eN eN Total
0.4 0.1
0.6
Equivalent Open Circuit Input Noise Current
N i
TO46 Package
Pin Configuration
1 Drain, 2 Source, 3 Gate & Case
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B-28
01/99
IF140, IF140A

Low-Noise, High Gain Amplifiers
20 V 10 mA 375 mW 3 mW/C 65C to 200C
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Gate Source Voltage Gate Source Forward Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics Common Source Forward Transmittance Yfs Common Source Output Conductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Yos Ciss Crss V(BR)GSS IGSS VGS(OFF) VGS VGS(F) IDSS
IF140 Min 20 0.1 0.2 6 5 1 5 15 Max
IF140A Min 20 0.1 0.2 6 2.5 5 6 1 15 Max Unit V nA nA V V V mA
Process NJ14AL Test Conditions IG = 1 A, VDS = V VGS = 15V, VDS = V VGS = 15V, VDS = V VDS = 15V, ID = 5 nA VDS = 15V, ID = 50 A VDS = , IG = 1 mA VDS = 15V, VGS = V TA = 150C
4.5 0.05 3 0.6 Typ
4.5 0.05 3 0.6 Typ 4
mS S pF pF
eN
nV/Hz
VDS = 12V, VGS = V
f = 10 Hz
TO72 Package
Pin Configuration
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01/99
B-29
IF142

20 V 10 mA 375 mW 3 mW/C 65C to 200C
At 25C free air temperature: Static Electrical Characteristics
IF142 Min Max Unit
Process NJ14AL Test Conditions
Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Gate Source Voltage Gate Source Forward Voltage Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
V(BR)GSS IGSS VGS(OFF) VGS VGS(F) IDSS
25 0.1 0.2 6 5 1 15
V nA nA V V V mA
IG = 1 A, VDS = V VGS = 15V, VDS = V VGS = 15V, VDS = V VDS = 15V, ID = 5 nA VDS = 15V, ID = 50 A VDS = , IG = 1 mA VDS = 15V, VGS = V TA = 150C
Common Source Forward Transmittance Common Source Output Conductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance
Yfs Yos Ciss Crss
3.5 0.05 3 0.6

Typ
mS S pF pF
eN
nV/Hz
VDS = 12V, VGS = V
f = 10 Hz
TO236AB Package
Pin Configuration
1 Drain, 2 Source, 3 Gate
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B-30
01/99
IF1320

20 V 10 mA 225 mW 1.8 mWC 65C to 200C
IF1320 Min Max Unit
Process NJ132L Test Conditions
Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed)
V(BR)GSS IGSS VGS(OFF) IDSS
20 0.35 5 0.1 1.5 20
V nA V mA
IG = 1 A, VDS = V VDS = V, VGS = 10V VDS = 10V, ID = 0.5 nA VDS = 10V, VGS = V
Common Source Forward Transconductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance
gfs Ciss Crss
15 20 5
Typ
mS pF pF
VDS = 10V, ID = 5 mA VDS = 10V, ID = 5 mA VDS = 10V, ID = 5 mA
eN
2.5
nV/Hz
VDS = 10V, ID = 5 mA
f = 1 kHz
TO236AB Package
Pin Configuration
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01/99
B-31
IF1330

20 V 10 mA 225 mW 1.8 mW/C 65C to 200C
IF1330 Min Max Unit
Process NJ132H Test Conditions
20 0.35 5 0.1 1.5 20
V nA V mA
gfs Ciss Crss
10 20 5
Typ
mS pF pF
eN
2.5
nV/Hz
f = 1 kHz
TO236AB Package
Pin Configuration
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B-32
01/99
IF1331

20 V 10 mA 225 mW 1.8 mW/C 65C to 200C
IF1331 Min Max Unit
20 0.35 5 0.1 1.5 20
V nA V mA
gfs Ciss Crss
10 20 5
Typ
mS pF pF
eN
2.5
nV/Hz
f = 1 kHz
TO72 Package
Pin Configuration
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01/99
B-33
IF1801

Absolute maximum ratings = TA at 25C
Reverse Gate Source Voltage & Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range
20 V 10 mA 300 mW 2 mW/C 65C to 200C
IF1801 Min Max Unit
Process NJ1800DL Test Conditions
20 0.35 30 0.1 2
V nA V mA
IG = 1 A, VDS = V VGS = 10V, VDS = V VDS = 10V, ID = 0.5 nA VDS = 10V, VGS = V
gfs Ciss Crss
50 100 50
Typ
mS pF pF
eN
0.5
nV/Hz
VDG = 4V, ID = 5 mA
f = 1 kHz
TO52 Package
Pin Configuration
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B-34
01/99
IF3601

20 V 10 mA 300 mW 2 mW/C 65C to 200C
IF3601 Min Max Unit
20 0.35 30
Typ
V 0.1 2 nA V mA
Common Source Forward Transconductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Equivalent Short Circuit Input Noise Voltage
gfs Ciss Crss eN
750 300 200 0.3
mS pF pF nV/Hz
VDS = 10V, VGS = V VDS = V, VGS = 4V VDS = V, VGS = 4V VDG = 3V, ID = 5 mA
f = 1 kHz f = 1 MHz f = 1 MHz f = 100 Hz
TO39 Package
Pin Configuration
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01/99
B-35
IF3602

20 V 10 mA 300 mW 4 mW/C 65C to 200C
IF3602 Min Max Unit
20 0.35 30
Typ
V 0.5 3 nA V mA
Common Source Forward Transconductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Equivalent Short Circuit Input Noise Voltage
gfs Ciss Crss eN
750 300 200 0.3

Max
mS pF pF nV/Hz
VDS = 10V, VGS = V VDS = V, VGS = 4V VDS = V, VGS = 4V VDG = 3V, ID = 5 mA
Differential Gate Source Voltage
| VGS1 VGS2 |
100
mV
VDS = 10V, VGS = V
TO78 Package
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Omitted, 5 Source, 6 Drain, 7 Gate, 8 Omitted
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B-36
01/99
IF4500

20 V 10 mA 225 mW 1.8 mW/C 65C to 200C
IF4500 Min Max Unit
20 0.35 5 0.1 1.5
V nA V mA
gfs Ciss Crss
15 35 8
Typ
mS pF pF
VDS = 15V, ID = 5 mA VDS = 15V, VGS = V VDS = 15V, VGS = V
eN
1.5
nV/Hz
VDS = 12V, VGS = V
f = 1 kHz
TO236AB Package
Pin Configuration
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01/99
B-37
IF4501

20 V 10 mA 300 mW 2.4 mW/C 65C to 200C
IF4501 Min Max Unit
20 0.35 5 0.1 1.5
V nA V mA
gfs Ciss Crss
15 35 9
Typ
mS pF pF
eN
1.5
nV/Hz
VDG = 12V, ID = 5 mA
f = 1 kHz
TO72 Package
Pin Configuration
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B-38
01/99
IF4510

20 V 10 mA 300 mW 1.8 mW/C 65C to 200C
IF4510 Min Max Unit
20 0.35 5 0.1 1.5
V nA V mA
gfs Ciss Crss
15 35 8
Typ
mS pF pF
eN
1.5
nV/Hz
VDG = 12V, VGS = V
f = 1 kHz
TO236AB Package
Pin Configuration
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01/99
B-39
IF4511

Audio Amplifier
20 V 10 mA 300 mW 1.8 mW/C 65C to 200C
IF4511 Min Max Unit
20 0.35 5 0.1 1.5
V nA V mA
gfs Ciss Crss
15 35 8
Typ
mS pF pF
eN
1.5
nV/Hz
VDG = 12V, VGS = V
f = 1 kHz
TO72 Package
Pin Configuration
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B-40
01/99
IF9030

20 V 10 mA 300 mW 2.4 mW/C 65C to 200C
IF9030 Min Max Unit
20 0.35 30 0.1 2 300
V nA V mA
gfs Ciss Crss
80 60 20
Typ
mS pF pF
VDS = 10V, VGS = V VDS = 10V, ID = 5 mA VDS = 10V, ID = 5 mA
eN
0.5
nV/Hz
VDG = 4V, ID = 5 mA
f = 1 kHz
TO52 Package
Pin Configuration
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01/99
B-41
IFN421, IFN422, IFN423

Very High Input Impedance Differential Amplifiers Electrometers
Device Dissipation (Derate 3.2 mW/C to 50C) Total Device Dissipation (Derate 6 mW/C to 150C) Storage Temperature Range
400 mW 750 mW 65C to 200C
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate to Gate Breakdown Voltage Gate Reverse Current Gate Operating Current Gate Source Cutoff Voltage Gate Source Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics
Common Source Forward Transconductance gfs
IFN421, IFN422, IFN423 Min V(BR)GSS BVG1G2 IGSS IG VGS(OFF) VGS IDSS 60 0.4 40 40 1 1 0.25 250 2 1.8 1000 Typ 60 Max Unit V V pA nA pA pA V V A
Process NJ01 Test Conditions IG = 1 A, VDS = V IG = 1 A, ID = A, IS = A VGS = 20V, VDS = V VGS = 20V, VDS = V VDS = 10V, ID = 30 A VDS = 10V, ID = 30 A VDS = 10V, ID = 1 nA VDS = 10V, ID = 30 A VDS = 10V, VGS = V TA = +125C TA = +125C
100
1500 3 3 1.5 20 70 1
S S pF pF
nV/Hz
VDS = 10V, VGS = V VDS = 10V, ID = 30 A VDS = 10V, VGS = V VDS = 10V, VGS = V VDS = 10V, ID = 30 A VDS = 10V, ID = 30 A RG = 10 M
f = 1 kHz f = 1 kHz f = 1 MHz f = 1 MHz f = 10 Hz f = 10 Hz
Common Source Output Conductance Common Source Input Capacitance

Equivalent Circuit Input Noise Voltage
gos Ciss eN NF
Noise Figure
dB
Max - IFN421 IFN422 IFN423 Differential Gate Source Voltage Differential Gate Source Voltage With Temperature
|VGS1 VGS2| |VGS1 VGS2|
10 10
15 25
25 40
mV V/C
VDG = 10V, ID = 30 A VDG = 10V, ID = 30 A TA = 55C TB = 25C TC = 125C
Min - IFN421 IFN422 IFN423 Common Mode Rejection Ratio CMRR 90 80 80 dB VDG = 10V to 20V, ID = 30 A
TO78 Package
Pin Configuration
1 Source 1, 2 Drain 1, 3 Gate 1, 4 Case, 5 Source 2, 6 Drain 2, 7 Gate 2, 8 Omitted 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375
www.interfet.com
B-42
01/99
IFN424, IFN425, IFN426

Very High Impedance Differential Amplifiers Electrometers
Device Dissapation (Derate 3.2 mW/C to 50C) Total Device Dissipation (Derate 6 mW/C to 150 C) Storage Temperature Range
400 mW 750 mW 60 C to 200 C
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate to Gate Breakdown Voltage Gate Reverse Current Gate Operating Current Gate Source Cutoff Voltage Gate Source Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics
IFN424, IFN425, IFN426 Min V(BR)GSS BVG1G2 IGSS IG VGS(OFF) VGS IDSS 60 1800 0.4 40 40 3 3 0.5 500 3 2.9 Typ 60 Max Unit V V pA nA pA pA V V A
Process NJ01 Test Conditions IG = 1 A, VDS = V IG = 1 A, ID = A, IS = A VGS = 20V, VDS = V VGS = 20V, VDS = V VDS = 10V, ID = 30 A VDS = 10V, ID = 30 A VDS = 10V, ID = 1 nA VDS = 10V, ID = 30 A VDS = 10V, VGS = V TA = +125C TA = +125C
100
1500 3 3 1.5 20 70 1
S S pF pF
nV/Hz
VDS = 10V, VGS = V VDS = 10V, ID = 30 A VDS = 10V, VGS = V VDS = 10V, VGS = V VDS = 10V, ID = 30 A VDS = 10V, ID = 30 A RG = 1 M
f = 1 kHz f = 1 kHz f = 1 MHz f = 1 MHz f = 10 Hz f = 10 Hz
Common Source Output Conductance Common Source Input Capacitance

gos Ciss eN NF
Noise Figure
dB
Max - IFN424 IFN425 IFN426 Differential Gate Source Voltage Differential Gate Source Voltage With Temperature
|VGS1 VGS2| |VGS1 VGS2|
10 10
15 25
25 40
mV V/C
VDG = 10V, ID = 30 A VDG = 10V, ID = 30 A TA = 55C TB = 25C TC = 125C
Min - IFN424 IFN425 IFN426 Common Mode Rejection Ratio CMRR 90 80 80 dB VDG = 10V to 20V, ID = 30 A
TO78 Package
Pin Configuration
1 Source 1, 2 Drain 1, 3 Gate 1, 4 Case, 5 Source 2, 6 Drain 2, 7 Gate 2, 8 Omitted
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01/99
B-43
IFN860

Low-Noise Audio Amplifier Equivalent to Crystalonics CD860
20 V 50 mA 400 mW 2.3 mW/C 65C to 200C
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Leakage Voltage Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Differential Gate Source Voltage Dynamic Electrical Characteristics Transconductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Equivalent Short Circuit Input Noise Voltage gm Ciss Crss eN 25 V(BR)GSS IGSS VGS(OFF) IDSS
|VGS1 VGS2|
IFN860 Min 20 3 0.3 10 25 3 Typ Max Unit V nA V mA mV
Process NJ450L Test Conditions IG = 1 A, VDS = V VGS = 10V, VDS = V VDS = 10V, ID = 100 A VDS = 10V, VGS = V VDS = 10V, ID = 100 A
40 30 17 35 20 2
mS pF pF
nV/Hz
VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDG = 3V, ID = 10 mA
f = 1 kHz f = 1 MHz f = 1 MHz f = 1 kHz
TO71 Package
Pin Configuration
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B-44
01/99
IFN5114, IFN5115, IFN5116

Analog Switches
50 V 50 mA 500 mW 4 mW/C 65C to 200C
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Gate Source Forward Voltage Drain Saturation Current (Pulsed) Drain Cutoff Current V(BR)GSS IGSS VGS(OFF) VGS(F) IDSS ID(OFF)
IFN5114 Min 30 2 10 5 30 10 1 90 Max
IFN5115 Min 30 2 10 3 6 1 15 60 2 10 0.8 Max
IFN5116 Min 30 2 10 1 4 1 5 25 2 10 Max Unit V nA A V V mA mA nA A V V 0.6 V pF pF pF 7 pF 150
Process PJ99 Test Conditions IG = 1mA, VDS = V VGS = 20V, VDS = V VGS = 20V, VDS = V VDS = 15V, IG = 1 nA VDS = V, IG = 1 mA VDS = 15V, VGS = 18V VDS = 15V, VGS = 15V VDS = 15V, VGS = 12V VDS = 15V, VGS = 7V VGS = V, ID = 15 mA VGS = V, ID = 7 mA VGS = V, ID = 3 mA VGS = V, ID = 1 mA TA = 150C TA = 150C
2 10 1.3
Drain Source ON Voltage Static Drain Source ON Resistance Dynamic Electrical Characteristics Drain Source ON Resistance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Switching Characteristics Turn ON Delay Time Rise Time Turn OFF Delay Time Fall Time
VDS(ON) rDS(ON) 75
100
rds(on) Ciss Crss
75 25 7
100 25 7
150 27
VGS = V, ID = A VDS = 15V, VGS = V VDS = 10V, VGS = 12V VDS = 10V, VGS = 7 V VDS = 10V, VGS = 5V
VDD VGG RL RG ID(ON) 10 20 130 100 15 6 12 910 220 7
f = 1 kHz f = 1 MHz f = 1 MHz f = 1 MHz f = 1 MHz
IFN5114 IFN5115 IFN5116
td(on) tr td(off) tf
6 10 6 15
10 20 8 30
25 35 20 60
ns ns ns ns
6 8 2000 390 3
V V mA
TO18 Package
Surface Mount
SMP5114, SMP5115, SMP5116
Pin Configuration
1 Source 1, 2 Gate & Case, 3 Drain 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375
www.interfet.com
01/99
B-45
IFN5432, IFN5433, IFN5434

Analog Low On Resistance Switches Choppers
25 V 100 mA 300 mW 2.4 mW/C
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Drain Cutoff Current Drain Source ON Voltage Static Drain Source ON Resistance Dynamic Electrical Characteristics Drain Source ON Resistance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Switching Characteristics Turn ON Delay Time Rise Time Turn OFF Delay Time Fall Time td(on) tr td(off) tf rds(on) Ciss Crss V(BR)GSS IGSS VGS(OFF) IDSS ID(OFF) VDS rDS(ON)
IFN5432 Min 25 200 200 4 150 200 200 50 2 5 10 Max
IFN5433 Min 25 200 200 3 100 200 200 70 7 9 Max
IFN5434 Min 25 200 200 1 30 200 200 100 10 4 Max Unit V pA nA V mA pA nA mV pF pF
Process NJ903 Test Conditions IG = 1A, VDS = V VGS = 15V, VDS = V VGS = 15V, VDS = V VDS = 5V, IG = 3 nA VDS = 15V, VGS = V VDS = 5V, VGS = 10V VDS = 5V, VGS = 10V VGS = V, ID = 10 mA VDS = V, ID = 10 mA TA = 150C TA = 150C
5 60 20
7 60 20
10 60 20
4 1 6 30
4 1 6 30
4 1 6 30
ns ns ns ns
VDD = 1.5 V, VGS(ON) = V VGS(OFF) = 12V, ID(ON) = 10 mA (IFN5432) RL = 145 (IFN5433) RL = 143 (IFN5433) RL = 140
TO52 Package
Pin Configuration
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B-46
01/99
IFN5564, IFN5565, IFN5566

Wide Band Differential Amplifier Commutators
Absolute maximum ratings at TA = 25C.
40 V 50 mA 650 mW 3.3 mW/C
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Leakage Voltage Gate Source Cutoff Voltage Gate Source Voltage Saturation Current (Pulsed) Static Drain Source ON Resistance Dynamic Electrical Characteristics Common Source Forward Transconductance
Common Source Output Transconductance
IFN5564 Min V(BR)GSS IGSS VGS(OFF) VGS(f) IDSS rDS(ON) 5 0.5 40 100 200 3 1 30 100 Max
IFN5565 Min 40 100 200 0.5 5 3 1 30 100 Max
IFN5566 Min 40 100 200 0.5 5 3 1 30 100 Max Unit V pA nA V V mA
Process NJ72 Test Conditions IG = 1A, VDS = V VGS = 20V, VDS = V TA = 150C VDS = 15V, ID = 1 nA VDS = V, IG = 2 mA VDS = 15V, VGS = V ID = 1 mA, VGS = V
gfs gos Ciss
7000 12500 7000 12500 7000 12500 hmo 7000 45 12 3 1 50 7000 45 12 3 1 50 7000 45 12 3 1 50 hmo hmo pF pF dB
nV/Hz
VDG = 15V, ID = 2 mA VDS = 15V, ID = 2 mA VDS = 15V, ID = 2 mA VDS = 15V, ID = 2 mA VDS = 15V, ID = 2 mA RG = 1 M VDG = 15V, ID = 2 mA
f = 1 kHz f = 100 MHz f = 1 kHz f = 1 MHz f = 1 MHz f = 10 Hz f = 10 Hz
Common Source Input Capacitance
Noise Figure
NF eN
Characteristics Saturation Drain Current Ratio (Pulsed) Differential Gate Source Voltage
Gate Source Voltage Differential Drift
IDSS1 IDSS2
0.95
1 5 10 10
0.95
1 10 25 25
0.95
1 20 50 50
mV V/C V/C
VDG = 15V, VGS = V VDS = 15V, ID = 2 mA VDS = 15V, ID = 2 mA TA = 25C TB = 125C TA = 55C TB = 25C
|VGS(1) VGS(2)| |VGS(f) VGS(f)| T gfs(1) gfs(2) 0.95
Transconductance Ratio (Pulsed)
0.9
0.9
TO71 Package
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Omitted, 5 Source, 6 Drain, 7 Gate, 8 Omitted
www.interfet.com
01/99
B-47
IFN5911, IFN5912

VHF Amplifiers Wideband Differential Amplifiers
Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range
50 mA 500 mW 4 mW/C 65C to 200C

Gate Source Breakdown Voltage Gate Reverse Current Gate Operating Current Gate Source Cutoff Voltage Gate Source Voltage Drain Saturation Current (Pulsed) V(BR)GSS IGSS IG VGS(OFF) VGS IDSS
IFN5911 Min
25 100 250 100 100 1 0.3 7 5 4 40
IFN5912 Min
25 100 250 100 100 1 0.3 7 5 4 40
Process NJ30L or NJ36D Unit

V pA nA pA nA V V mA
Max
Max
Test Conditions
IG = 1 A, VDS = V VGS = 15V, VDS = V VGS = 15V, VDS = V VDG = 10V, ID = 5 mA VDG = 10V, ID = 5 mA VDS = 10V, ID = 1 nA VDS = 10V, ID = 5 mA VDS = 10V, VGS = V TA = 125C TA = 150C

Common Source Forward Transconductance Common Source Output Conductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Equivalent Short Circuit Input Noise Voltage Noise Figure Differential Gate Current Saturation Drain Current Ratio Differential Gate Source Voltage Gate Source Voltage Differential Drift Transconductance Ratio gfs gos Ciss Crss eN NF |IG1 | |IG2 | IDSS1 / IDSS2 0.95 VGS1 VGS2 VGS1 VGS2
T VGS1 VGS2 T
3000 10000 3000 10000 3000 10000 3000 10000 100 150 5 1.2 20 1 20 1 10 20 20 0.95 1 0.95 0.95 100 150 5 1.2 20 1 20 1 15 40 40 1
S S S S pF pF
nV/Hz
VDG = 10V, ID = 5 mA VDG = 10V, ID = 5 mA VDG = 10V, ID = 5 mA VDG = 10V, ID = 5 mA VDG = 10V, ID = 5 mA VDG = 10V, ID = 5 mA VDG = 10V, ID = 5 mA VDG = 10V, ID = 5 mA RG = 100 K VDG = 10V, ID = 5 mA VDS = 10V, VGS = V VDG = 10V, ID = 5 mA VDG = 10V, ID = 5 mA VDG = 10V, ID = 5 mA VDG = 10V, ID = 5 mA
f = 1 kHz f = 100 MHz f = 1 kHz f = 100 MHz f = 1 MHz f = 1 MHz f = 10 kHz f = 10 Hz TA = 125C
dB nA mV V/C V/C
TA = 25C TB = 125C TA = 55C TB = 25C f = 1 kHz
gfs1 / gfs2
TO78 Package
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case, 5 Source, 6 Drain, 7 Gate, 8 Omitted
www.interfet.com
B-48
01/99
IFN6449, IFN6450

High Voltage
IFN6449 IFN6450 100 V 100 V 300 V 200 V 10 mA 10 mA 800 mW 800 mW 6.4 mW/C 6.4 mW/C
At 25C free air temperature: Static Electrical Characteristics Gate Drain Breakdown Voltage Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics Common Source Forward Transfer Transmittance Common Source Output Conductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance | Yfs | gos Ciss Crss V(BR)GDO V(BR)GSO IGSS VGS(OFF) IDSS
IFN6449 Min 300 100 Max
IFN6450 Min 200 100 100 100 Max Unit V V nA A V mA
Process NJ42 Test Conditions IG = 10 A, I S = A IG = 10 A, ID = A VGS = 80V, VDS = V VGS = 80V, VDS = V VDS = 30V, ID = 4 nA VDS = 30V, VGS = V TA = 150C
2 2
15 10
2 2
15 10
0.5
3 100 10 5
0.5
3 100 10 5
mS S pF pF
TO39 Package
Pin Configuration
www.interfet.com
01/99
B-49
J108, J109

25 V 50 mA 360 mW 3.27 mW/C
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Drain Cutoff Current Dynamic Electrical Characteristics Drain Source ON Resistance Drain Gate Capacitance Source Gate Capacitance Drain Gate + Source Gate Capacitance Switching Characteristics Turn ON Delay Time Rise Time Turn OFF Delay Time Fall Time td(on) tr td(off) tf rds(on) Cgd Cgs Cgd + Cgs V(BR)GSS IGSS VGS(OFF) IDSS ID(OFF)
J108 Min 25 3 3 80 3 10 Max
J109 Min 25 3 2 40 3 6 Max Unit V nA V mA nA
Process NJ450 Test Conditions IG = 1 A, VDS = V VGS = 15V, VDS = V VDS = 5V, ID = 1 A VDS = 15V, VGS = V VDS = 5V, VGS = 10V
8 15 15 85 Typ 3 1 4 18 Typ 3 1 4 18
12 15 15 85
pF pF pF
VGS = , VDS < = 0.1V VDS = V, VGS = 10V VDS = V, VGS = 10V VDS = VGS = V
f = 1 kHz f = 1 MHz f = 1 MHz f = 1 MHz
ns ns ns ns VDD VGS(OFF) RL
J108 1.5 12 150
J109 1.5 7 150 V V
TO226AA Package
Surface Mount
SMPJ108, SMPJ109
Pin Configuration
www.interfet.com
B-50
01/99
J110, J110A

25 V 50 mA 360 mW 3.27 mW/C
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Drain Cutoff Current Dynamic Electrical Characteristics Drain Source ON Resistance Drain Gate Capacitance Source Gate Capacitance Drain Gate + Source Gate Capacitance Switching Characteristics Turn ON Delay Time Rise Time Turn OFF Delay Time Fall Time td(on) tr td(off) tf rds(on) Cgd Cgs Cgd + Cgs V(BR)GSS IGSS VGS(OFF) IDSS ID(OFF)
J110 Min 25 3 0.5 10 3 4 Max
J110A Min 25 3 0.5 10 3 4 Max Unit V nA V mA nA
Process NJ450 Test Conditions IG = 1 A, VDS = V VGS = 15V, VDS = V VDS = 5V, ID = 1 A VDS = 15V, VGS = V VDS = 5V, VGS = 10V
18 15 15 85 Typ 4 1 6 30 Typ 4 1 6 30
25 15 15 85
pF pF pF
VGS = , VDS < = 0.1V VDS = V, VGS = 10V VDS = V, VGS = 10V VDS = VGS = V
J110 1.5 5 150
J110A 1.5 5 150 V V
TO226AA Package
Surface Mount
SMPJ110, SMPJ110A
Pin Configuration
www.interfet.com
01/99
B-51
J111, J112, J113

35 V 50 mA 360 mW 3.27 mW/C
At 25C free air temperature Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Drain Cutoff Current Dynamic Electrical Characteristics Drain Source ON Resistance Drain Gate Capacitance Source Gate Capacitance Drain Gate + Source Gate Capacitance Switching Characteristics Turn ON Delay Time Rise Time Turn OFF Delay Time Fall Time td(on) tr td(off) tf rds(on) Cdg Cgs Cgd + Cgs V(BR)GSS IGSS VGS(OFF) IDSS ID(OFF)
J111 Min 35 1 3 20 1 10 Max
J112 Min 35 1 1 5 1 5 2 Max
J113 Min 35 1 3 1 Max Unit V nA V mA nA
Process NJ132 Test Conditions IG = 1A, VDS = V VGS = 15V, VDS = V VDS = 5V, ID = 1 A VDS = 15V, VGS = V VDS = 15V, VGS = 10V
30 5 5 28 Typ 7 6 20 15 Typ 7 6 20 15
50 5 5 28 Typ 7 2 20 15
100 5 5 28
pF pF pF
VGS = V, VDS = 0.1V VDS = V, VGS = 10V VDS = V, VGS = 10V VDS = VGS = V
J111 10 12 800
J112 10 7 1600
J113 10 5 3200 V V
TO226AA Package
Surface Mount
SMPJ111, SMPJ112, SMPJ113
Pin Configuration
www.interfet.com
B-52
01/99
J174, J175

30 V 50 mA 360 mW 3.27 mW/C
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Drain Cutoff Current Dynamic Electrical Characteristics Drain Source ON Resistance Dynamic Electrical Characteristics Drain Gate Capacitance Source Gate Capacitance Drain Gate + Source Gate Capacitance Switching Characteristics Turn ON Delay Time Rise Time Turn OFF Delay Time Fall Time td(on) tr td(off) tf Cgd Cgs Cgd + Cgs rds(on) V(BR)GSS IGSS VGS(OFF) IDSS ID(OFF) 5
J174 Min 30 1 10 1 Max 85 Typ 5.5 5.5 32 3 Max
J175 Min 30 1 6 70 1 Max 85 Typ 5.5 5.5 32 pF pF pF Max Unit V nA V mA nA
Process PJ99 Test Conditions IG = 1 A, VDS = V VGS = 20V, VDS = V VDS = 15V, ID = 10 nA VDS = 15V, VGS = V VDS = 15V, VGS = 10V
20 125 7
VGS = , VDS < = 0.1V
f = 1 kHz
VDS = V, VGS = 10V VDS = V, VGS = 10V VDS = VGS = V
f = 1 MHz f = 1 MHz f = 1 MHz
2 5 5 10
5 10 10 20
ns ns ns ns
VDD VGS(OFF) RL VGS(ON)
J174
10 12 560
J175
6 8 1.2 k V V V
TO226AA Package
Surface Mount
SMPJ174, SMPJ175
Pin Configuration
1 Drain, 2 Gate, 3 Source 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375
www.interfet.com
01/99
B-53
J176, J177

30 V 50 mA 360 mW 3.27 mW/C
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Drain Cutoff Current Dynamic Electrical Characteristics Drain Source ON Resistance Dynamic Electrical Characteristics Drain Gate Capacitance Source Gate Capacitance Drain Gate + Source Gate Capacitance Switching Characteristics Turn ON Delay Time Rise Time Turn OFF Delay Time Fall Time td(on) tr td(off) tf Cgd Cgs Cgd + Cgs rds(on) V(BR)GSS IGSS VGS(OFF) IDSS ID(OFF) 1
J176 Min 30 1 4 1 Max 250 Typ 5.5 5.5 32 Max
J177 Min 30 1 0.8 2.25 1 Max 300 Typ 5.5 5.5 32 pF pF pF Max Unit V nA V mA nA
Process PJ99 Test Conditions IG = 1 A, VDS = V VGS = 20V, VDS = V VDS = 15V, ID = 10 nA VDS = 15V, VGS = V VDS = 15V, VGS = 10V
35 1.5 20
VGS = , VDS < = 0.1V
f = 1 kHz
VDS = V, VGS = 10V VDS = V, VGS = 10V VDS = VGS = V
f = 1 MHz f = 1 MHz f = 1 MHz
15 20 15 20
20 25 20 25
ns ns ns ns
VDD VGS(OFF) RL VGS(ON)
J176
6 6 5.6 k
J177
6 3 10 k V V V
TO226AA Package
Surface Mount
SMPJ176, SMPJ177
Pin Configuration
1 Drain, 2 Gate, 3 Source 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375
www.interfet.com
B-54
01/99
J201, J202

40 V 50 mA 360 mW 3.27 mW/C
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Operating Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics Common Source Forward Transconductance Common Source Output Conductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Equivalent Short Circuit Input Noise Voltage g fs g os Ciss Crss eN V(BR)GSS IGSS IG VGS(OFF) IDSS
J201 Min 40 100 10 0.3 0.2 1.5 1 0.8 0.9 Typ Max Min 40
J202 Typ Max Unit V 100 10 4 4.5 pA pA V mA
Process NJ16 Test Conditions IG = 1A, VDS = V VGS = 20V, VDS = V VDG = 20V, ID = IDSS(min) VDS = 20V, ID = 10 nA VDSS = 15V, VGS = V
500 1 4 1 5
1000 3.5 4 1 5
S S pF pF
nV/Hz
VDS = 20V, VGS = V VDS = 20V, VGS = V VDS = 20V, VGS = V VDS = 20V, VGS = V VDS = 10V, VGS = V
f = 1 kHz f = 1 kHz f = 1 MHz f = 1 MHz f = 1 kHz
TO226AA Package
Surface Mount
SMPJ201, SMPJ202
Pin Configuration
www.interfet.com
01/99
B-55
J203, J204

40 V 50 mA 360 mW 3.27 mW/C
J203 Min 40 100 10 2 4 10 20 0.3 0.2 Typ Max Min 25
J204 Typ Max Unit V 100 10 2 1.2 3 pA pA V mA
Process NJ16 Test Conditions IG = 1A, VDS = V VGS = 20V, VDS = V VDG = 20V, ID = IDSS(min) VDS = 20V, ID = 10 nA VDS = 15V, VGS = V
1500 10 4 1 5
500
1500 2.5 4 1 10
S S pF pF
nV/Hz
TO226AA Package
Surface Mount
SMPJ203, SMPJ204
Pin Configuration
www.interfet.com
B-56
01/99
J210, J211

25 V 10 mA 360 mW 3.27 mW/C
J210 Min 25 100 10 1 2 3 15 2.5 7 Typ Max Min 25
J211 Typ Max Unit V 100 10 4.5 20 pA pA V mA
Process NJ26L Test Conditions IG = 1A, VDS = V VGS = 15V, VDS = V VDS = 20V, ID = 1 mA VDS = 15V, ID = 1 nA VDS = 15V, VGS = V
4000
12000 6000 150 4 1 10 4 1 10
12000 200
S S pF pF
nV/Hz
TO226AA Package
Surface Mount
SMPJ210, SMPJ211
Pin Configuration
www.interfet.com
01/99
B-57
J212

Audio Amplifier General Purpose Amplifier
25 V 10 mA 360 mW 3.27 mW/C
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Operating Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics
J212 Min V(BR)GSS IGSS IG VGS(OFF) IDSS 4 15 10 6 40 25 100 Typ Max Unit V pA pA V mA
Process NJ26L Test Conditions IG = 1 A, VDS = V VGS = 15V, VDS = V VDS = 20V, ID = 1 mA VDS = 15V, ID = 1 nA VDS = 15V, VGS = V
7000 4 1 10
12000 200
S S pF pF
nV/Hz
Common Source Output Conductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Equivalent Short Circuit Input Noise Voltage
gos Ciss Crss eN
TO226AA Package
Surface Mount
SMPJ212
Pin Configuration
www.interfet.com
B-58
01/99
J230, J231

Audio Amplifiers
40 V 50 mA 360 mW 3.27 mW/C
J230 Min 40 250 2 0.5 0.7 3 3 1.5 2 Typ Max Min 40
J231 Typ Max Unit V 250 2 5 6 pA pA V mA
Process NJ16 Test Conditions IG = 1A, VDS = V VGS = 30V, VDS = V VDS = 20V, ID = V VDS = 20V, ID = 1 A VDS = 20V, VGS = V
1000 1.5 4 1 8 2
3500
1500 3 4 1
4000
S S pF pF
VDS = 20V, VGS = V VDS = 20V, VGS = V VDS = 20V, VGS = V VDS = 20V, VGS = V VDS = 10V, VGS = V VDS = 10V, VGS = V
f = 1 kHz f = 1 kHz f = 1 MHz f = 1 MHz f = 10 Hz f = 1 kHz
30
8 2
30
nV/Hz nV/Hz
TO226AA Package
Surface Mount
SMPJ230, SMPJ231
Pin Configuration
www.interfet.com
01/99
B-59
J232

Audio Amplifier
40 V 50 mA 360 mW 3.27 mW/C
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Operating Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics
J232 Min V(BR)GSS IGSS IG VGS(OFF) IDSS 3 5 2 6 10 40 250 Typ Max Unit V pA pA V mA
Process NJ16 Test Conditions IG = 1 A, VDS = V VGS = 30V, VDS = V VDS = 20V, ID = V VDS = 20V, ID = 1 A VDS = 20V, VGS = V
2500 5 4 1 20 6
5000
S S pF pF
VDS = 20V, VGS = V VDS = 20V, VGS = V VDS = 20V, VGS = V VDS = 20V, VGS = V VDS = 10V, VGS = V VDS = 10V, VGS = V
f = 1 kHz f = 1 kHz f = 1 MHz f = 1 MHz f = 10 Hz f = 1 kHz
Common Source Output Conductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Equivalent Short Circuit Input Noise Voltage
gos Ciss Crss eN
30
nV/Hz nV/Hz
TO226AA Package
Surface Mount
SMPJ232
Pin Configuration
www.interfet.com
B-60
01/99
J304, J305

Mixers Oscillators VHF/UHF Amplifiers
30 V 10 mA 360 mW 3.27 mW/C
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics V(BR)GSS IGSS VGS(OFF) IDSS
J304 Min 30 100 2 5 6 15 0.5 1 Typ Max Min 30
J305 Typ Max Unit V 100 3 8 pA V mA
Process NJ26 Test Conditions IG = 1A, VDS = V VGS = 20V, VDS = V VDS = 15V, ID = 1 nA VDS = 15V, VGS = V
4500 Common Source Forward Transconductance Common Source Output Conductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Common Source Output Capacitance Common Source Output Conductance Common Source Output Susceptance Common Source Input Conductance Common Source Input Susceptance Common Source Power Gain Noise Figure g fs 4200 g os Ciss Crss Coss gos bos gis bis Gps NF 3 0.85 1 60 80 800 3600 80 800 2000 7500 20 11 1.7 3.8
7500
3000 3000
S S S 50 3 0.85 1 60 800 80 2000 S pF pF pF S S S S S S S S dB dB dB dB
VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, ID = 5 mA VDS = 15V, ID = 5 mA VDS = 15V, ID = 5 mA RG = 1
f = 1 kHz f = 100 MHz f = 400 MHz f = 1 kHz f = 1 MHz f = 1 MHz f = 1 MHz f = 100 MHz f = 400 MHz f = 100 MHz f = 400 MHz f = 100 MHz f = 400 MHz f = 100 MHz f = 400 MHz f = 100 MHz f = 400 MHz f = 100 MHz f = 400 MHz
50
TO226AA Package
Surface Mount
SMPJ304, SMPJ305
Pin Configuration
www.interfet.com
01/99
B-61
J308, J309

25 V 10 mA 360 mW 3.27 mW/C
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Gate Source Forward Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics
Common Source Forward Transconductance
J308 Min V(BR)GSS IGSS VGS(OFF) VGS(F) IDSS 12 1 25 1 1 6.5 1 60 12 1 Typ Max Min 25
J309 Typ Max Unit V 1 1 4 1 30 nA A V V mA
Process NJ72 Test Conditions IG = 1A, VDS = V VGS = 15V, VDS = V VGS = 15V, VDS = V VDS = 10V, ID = 1 nA VDS = V, IG = 1 mA VDS = 10V, VGS = V TA = +125C
g fs g os g fg g og Cdg Cgs eN Re(Yfs) Re(Yig) Re(Yis) Re(Gos) Gpg NF
8000 17000 250 13000 150 1.8 4 10 12 14 0.4 0.15 16 11 1.5 2.7 2.5 5
10000 17000 250 13000 100 1.8 4 10 12 14 0.4 0.15 16 11 1.5 2.7 2.5 5
S S S S pF pF
nV/Hz
VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = V, VGS = 10V VDS = V, VGS = 10V VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = 15V, ID = 10 mA VDS = 15V, ID = 10 mA
f = 1 kHz f = 1 kHz f = 1 kHz f = 1 kHz f = 1 MHz f = 1 MHz f = 100 kHz f = 105 MHz f = 105 MHz f = 105 MHz f = 105 MHz f = 105 MHz f = 450 MHz f = 105 MHz f = 450 MHz
Common Source Output Conductance

Common Gate Forward Transconductance Common Gate Output Transconductance
Gate Drain Capacitance Gate Source Capacitance Equivalent Short Circuit Input Noise Voltage Common Source Forward Transconductance Common Gate Input Conductance Common Source Input Conductance Common Source Output Conductance Common Gate Power Gain at Noise Match Noise Figure
S S S S dB dB dB dB
TO226AA Package
Surface Mount
SMPJ308, SMPJ309
Pin Configuration
www.interfet.com
B-62
01/99
J310

Mixer Oscillator VHF/UHF Amplifier
Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation
25 V 25 V 10 mA 360 mW
J310 Min V(BR)GSS IGSS VGS(OFF) VGS(F) IDSS 24 2 25 1 1 6.5 1 60 Typ Max Unit V nA A V V mA
Process NJ72 Test Conditions IG = 1 A, VDS = V VGS = 15V, VDS = V VGS = 15V, VDS = V VDS = 10V, ID = 1 nA VDS = V, IG = 1 mA VDS = 10V, VGS = V TA = + 125C
8000
17000 250 1200 150 1.8 4 10 12 14 0.4 0.15 16 11 1.5 2.7 2.5 5
S S S S pF pF
nV/Hz
VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = V, VGS = 10V VDS = V, VGS = 10V VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = 15V, ID = 10 mA VDS = 15V, ID = 10 mA
f = 1 kHz f = 1 kHz f = 1 kHz f = 1 kHz f = 1 MHz f = 1 MHz f = 100 Hz f = 105 MHz f = 105 MHz f = 105 MHz f = 105 MHz f = 105 MHz f = 450 MHz f = 105 MHz f = 450 MHz
Common Source Output Conductance

Common Gate Forward Transconductance Common Gate Output Transconductance
gos gfg gog Cdg Cgs eN
Gate Drain Capacitance Gate Source Capacitance Equivalent Short Circuit Input Noise Voltage
Common Source Forward Transconductance Re (Yfs) Common Gate Input Conductance Common Source Input Conductance Common Source Output Conductance
S S S S dB dB dB dB
Re (Yig) Re (Yis) Re (gos) Gpg NF
Common Gate Power Gain at Noise Match Noise Figure
TO226AA Package
Surface Mount
SMPJ310
Pin Configuration
www.interfet.com
01/99
B-63
P1086, P1087

Choppers Analog Switches
30 V 50 mA 360 mW 3.27 mW/C

Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Saturation Drain Current (Pulsed) Drain Cutoff Current V(BR)GSS IGSS VGS(OFF) IDSS ID(OFF) IDGO VDS(ON) rDS(ON)
P1086 Min
30 2 10 10 10 0.5 2
P1087 Min
30 2 5 5.0 10 0.5 2 0.1 0.5 0.5 150
Process PJ99 Unit

V nA V mA nA A nA A V V
Max
Max
Test Conditions
IG = 1 A, VDS = V VGS = 15V, VDS = V VDS = 15V, ID = 1 A VDS = 20V, VGS = V VDS = 15V, VGS = 12V (P1086) VGS = 7V (P1087) VDG = 15V, I S = A VDG = 15V, I S = A VGS = V, ID = 6 mA (P1086) VGS = V, ID = 3 mA (P1087) I D = 1 mA, VGS = V TA = 85C TA = 85C
Drain Reverse Current
0.1 0.5
Drain Source ON Voltage Static Drain Source ON Resistance
0.5 75

Drain Source ON Resistance Common Source Input Capacitance Common Source Reverse Transfer Capacitance rds(on) Ciss Crss 75 45 10 10 150 45 10 10 pF pF pF I D = , VGS = V VDS = 15V, VGS = V VDS = V, VGS = 12V (P1086) VDS = V, VGS = 7V (P1087) f = 1 kHz f = 1 kHz f = 1 MHz
Switching Characteristics
Turn ON Delay Time Rise Time Turn OFF Delay Time Fall Time td(on) tr td(off) tf 15 20 15 50 15 75 25 100 ns ns ns ns
VDD = 6V, VGS(ON) = V
P1086
VGS(OFF) VD(ON) RL 12 6 910
P1087
7 3 1.8K V MA
TO226AA Package
Surface Mount
SMPP1086, SMPP1087
Pin Configuration
1 Source, 2 Drain, 3 Gate 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375
www.interfet.com
B-64
01/99
SMP5911, SMP5912

Wideband Differential Amplifiers

Gate Source Breakdown Voltage Gate Reverse Current Gate Operating Current Gate Source Cutoff Voltage Gate Source Voltage Drain Saturation Current (Pulsed) V(BR)GSS IGSS IG VGS(OFF) VGS IDSS
SMP5911 Min
25 100 250 100 100 1.0 0.3 7 5 4 40
SMP5912 Min
25 100 250 100 100 1.0 0.3 7 5 4 40
Process NJ30L Unit

V pA nA pA nA V V mA
Max
Max
Test Conditions
IG = 1 A, VDS = V VGS = 15V, VDS = V VGS = 15V, VDS = V VDG = 10V, ID = 5 mA VDG = 10V, ID = 5 mA VDS = 15V, ID = 5 nA VDS = 15V, ID = 5 mA VDS = 10V, VGS = V TA = 125C TA = 150C

Common Source Forward Transconductance Common Source Output Conductance Common Source Input Capacitance
Common Source Reverse Transfer Capacitance Equivalent Short Circuit Input Noise Voltage
gfs gos Ciss Crss eN NF VGS1 VGS2 IG1 IG2
3000 10000 3000 10000 3000 10000 3000 10000 100 150 5 1.2 20 1 10 20 1 1 20 20 20 20 0.95 0.95 0.95 100 150 5 1.2 20 1 15 20 1 1 40 40 40 40
S S S S pF pF
nV/Hz
VDG = 10V, ID = 5 mA VDG = 10V, ID = 5 mA VDG = 10V, ID = 5 mA VDG = 10V, ID = 5 mA VDG = 10V, ID = 5 mA VDG = 10V, ID = 5 mA VDG = 10V, ID = 5 mA VDG = 10V, ID = 5 mA RG = 100 K VDG = 10V, ID = 5 mA VDG = 10V, ID = 5 mA VDG = 10V, VGS = V VDG = 10V, ID = 5 mA
f = 1 kHz f = 100 MHz f = 1 kHz f = 100 MHz f = 1 MHz f = 1 MHz f = 10 kHz f = 10 kHz
Noise Figure Gate Source Differential Voltage Gate Differential Current Drain Saturation Current Ratio Transconductance Ratio Gate Source Differential Voltage With Temperature
dB mV nA
TA = 125C f = 1 kHz TA = 25C TB = 125C TA = 35C TB = 25C
IDSS1 / IDSS2 0.95 gfs1 / gfs2

VGS1 VGS2 T
V/C V/C V/C V/C
VDG = 10V, ID = 5 mA VDG = 10V, ID = 5 mA VDG = 10V, ID = 5 mA VDG = 10V, ID = 5 mA
SOIC-8 Package
Pin Configuration
1 Source 1, 2 Drain 1, 3 Gate 1, 4 N/C, 5 Source 2, 6 Drain 2, 7 Gate 2, 8 Omitted
www.interfet.com
01/99
B-65
U290, U291

Choppers Low On Resistance Switches
30 V 100 mA 500 mW 4 mW/C

Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Drain Cutoff Current Drain Source ON Voltage Static Drain Source ON Resistance V(BR)GSS IGSS VGS(OFF) IDSS ID(OFF) VDS(ON) rDS(ON) 1
U290 Min
30 1 1 4 500 1 1 30 3 2 10
U291 Min
30 1 1 1.5 200 1 1 70 7 4.5
Process NJ1800D Unit

V nA A V mA nA A mV
Max
Max
Test Conditions
IG = 1 A, VDS = V VGS = 15V, VDS = A VGS = 15V, VDS = A VDS = 15V, ID = 3 nA VDS = 10V, VGS = V VDS = 5V, VGS = 10V VDS = 5V, VGS = 10V VGS = V, ID = 10 mA VGS = V, ID = 10 mA TA = 150C TA = 150C

Drain Source ON Resistance Drain Gate OFF Capacitance Source Gate OFF Capacitance Source Gate Plus Drain Gate rds(on) Cdgo Csgo Ciss 1 3 30 30 160 2 7 30 30 160 pF pF pF VGS = V, ID = VDG = 15V, IS = V VDG = 15V, IS = V VDG = V, VGS = V f = 1 kHz f = 1 MHz f = 1 MHz f = 1 MHz
Switching Characteristics
Turn ON Delay Time Rise Time Turn OFF Delay Time Fall Time td(on) tr td(off) tf 15 20 15 20 15 20 15 20 ns ns ns ns
VDD = 1.5V, ID(ON) = 30 mA RL = 50 VGS(ON) = V (U290) VGS(OFF) = 12 V (U291) VGS(OFF) = 7V
TO52 Package
Pin Configuration
www.interfet.com
B-66
01/99
U308, U309

25 V 20 mA 500 mW 4 mw/C
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Gate Source Forward Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics V(BR)GSS IGSS VGS(OFF) VGS(F) IDSS
U308 Min 25 150 150 1 12 6 1 60 12 1 Typ Max Min 25
U309 Typ Max Unit V 150 150 4 1 30 pA nA V V mA
Process NJ72 Test Conditions VGS = 1A, VDS = V VGS = 15V, VDS = V VGS = 15V, VDS = V VDS = 10V, ID = 1 nA VDS = V, IG = 10 mA VDS = 10V, VGS = V TA = +125C
10 Common Gate Forward Transconductance Gfs
17 15 14 250
10
17 15 14 250 0.18 0.32
mS mS mS S S S 2.5 pF pF
nV/Hz
VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = 10V, VGS = 10V VDS = 10V, VGS = 10V VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA
f = 1 kHz f = 105 MHz f = 450 MHz f = 1 kHz f = 105 MHz f = 450 MHz f = 1 MHz f = 1 MHz f = 100 kHz f = 105 MHz f = 450 MHz f = 105 MHz f = 450 MHz
Common Gate Output Conductance Drain Gate Capacitance Gate Source Capacitance Equivalent Short Circuit Input Noise Voltage Common Gate Power Gain Noise Figure
Gog Cdg Cgs eN Gpg NF 14 10
0.18 0.32 2.5 5 10 16 11 1.5 2.7 2 3.5 14 10
5 10 16 11 1.5 2.7 2 3.5
dB dB dB dB
TO52 Package
Surface Mount
SMPJ308/J309
Pin Configuration
www.interfet.com
01/99
B-67
U310

25 V 20 mA 500 mW 4 mW/C
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Gate Source Forward Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics 10
Common Gate Forward Transconductance
U310 Min V(BR)GSS IGSS VGS(OFF) VGS(F) IDSS 24 2.5 25 150 150 6 1 60 Typ Max Unit V pA nA V V mA
Process NJ72L Test Conditions IG = 1 A, VDS = V VGS = 15V, VDS = V VGS = 15V, VDS = V VDS = 10V, ID = 1 nA VDS = V, IG = 10 mA VDS = 10V, VGS = V TA = 125C
17 15 14 250
mS mS mS S S S 2.5 5 pF pF
nV/Hz
VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = 10V, VGS = 10V VDS = 10V, VGS = 10V VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA
f = 1 kHz f = 105 MHz f = 450 MHz f = 1 kHz f = 105 MHz f = 450 MHz f = 1 MHz f = 1 MHz f = 100 Hz f = 105 MHz f = 450 MHz f = 105 MHz f = 450 MHz
gfg
Common Gate Output Conductance Drain Gate Capacitance Gate Source Capacitance Equivalent Short Circuit Input Noise Voltage Common Gate Power Gain Noise Figure
gog Cdg Cgs eN Gpg NF 14 10
0.18 0.32
10 16 11 1.5 2.7 2 3.5
dB dB dB dB
TO52 Package
Surface Mount
SMPJ310
Pin Configuration
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B-68
01/99
U311

25 V 10 mA 300 mW 2.4 mW/C
Common Gate Forward Transconductance
U311 Min V(BR)GSS IGSS VGS(OFF) VGS(F) IDSS 20 1 25 150 150 6 1 60 Typ Max Unit V pA nA V V mA
Process NJ72L Test Conditions IG = 1 A, VDS = V VGS = 15V, VDS = V VGS = 15V, VDS = V VDS = 10V, ID = 1 nA VDS = V, IG = 1 mA VDS = 10V, VGS = V TA = 150C
gfg gog Cdg Cgs
1000
17000 250 2.5 5
S S pF pF
VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA
Common Gate Output Conductance Gate Drain Capacitance Gate Source Capacitance
TO72 Package
Pin Configuration
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01/99
B-69
U350
Hybrid Quad Silicon Junction Field-Effect Transistor Array

Analog Multiplier VHF Double-Balanced Mixer
Reverse Gate Source & Reverse Gate Drain Voltage Gate Current Continuous Device Power Dissipation Power Derating
25 V 25 mA 400 mW 3.2 mW/C
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Gate Source Forward Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics Drain Source ON Resistance Common Source Forward Transconductance Common Source Output Conductance Drain Gate Capacitance Gate Source Capacitance (Conversion Gain) Noise Figure Saturation Drain Current Ratio Gate Source Cutoff Voltage Ratio Common Source Forward Transconductance Differential Output Conductance rds(on) gfs gos Cdgo Csgo Gc NF IDSS / IDSS
VGS(OFF) / VGS(OFF)
U350 Min V(BR)GSS IGSS VGS(OFF) VGS(F) IDSS 24 2 25 1 1 6 1 60 Typ Max Unit V nA A V V mA
Four Matched Process NJ72L Test Conditions IG = 1 A, VDS = V VGS = 15V, VDS = V VGS = 15V, VDS = V VDS = 10V, ID = 1 nA VDS = V, IG = 1 mA VDS = 15V, VGS = V TA = 125C
50 10
90 18 150 2.5 5
mS S pF pF dB dB
VGS = V, ID = mA VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VGD = 10V, IS = V VGS = 10V, ID = V VDS = 20V, VGS = 1/2 VGS(OFF) RD = 1,700 VDS = 20V, VGS = 1/2 VGS(OFF) RD = 1,700 VDS = 15V, VDS = V VDS = 15V, ID = 1 nA VDS = 15V, ID = 10 mA VDS = 15V, ID = 10 mA
f = 1 kHz f = 1 kHz f = 1 kHz f = 1 MHz f = 1 MHz f = 100 MHz f = 100 MHz
4 7 0.9 0.9 0.9 0.9 1 1 1 1
gfs / gfs Yos / Yos
f = 1 kHz f = 1 kHz
TO78 Package
Pin Configuration
1 Gate 1 & 3, 2 Drain 1 & 4, 3 Source 1 & 2, 4 Ground & Case, 5 Source 3 & 4, 6 Drain 2 & 3, 7 Gate 2 & 4, 8 Omitted 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375
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B-70
01/99
U430, U431

Balanced Mixers Differential Amplifiers
Total Device Dissipation (Derate 4 mW/C to150C) Storage Temperature Range Lead Temperature
500 mW 65C to +150C 300C
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Gate Source Forward Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics Common Source Forward Transconductance Common Source Output Conductance Drain Gate Capacitance Source Gate Capacitance Equivalent Short Circuit Input Noise Voltage Power Match Source Admittance Conversion Gain Saturation Drain Current Ratio Gate Source Cutoff Voltage Ratio Transconductance Ratio Gfs Gos Cdg Cgs eN gig Gc IDSS1 /IDSS2 VGS(OFF)1 VGS(OFF)2 gfs1 /gfs2 V(BR)GSS IGSS VGS(OFF) VGS(F) IDSS
U430 Min 25 150 150 1 12 4 1 30 24 2 Typ Max Min 25
U431 Typ Max Unit V 150 150 6 1 60 pA nA V V mA
Process NJ72 Test Conditions IG = 1A, VDS = V VGS = 15V, VDS = V VGS = 15V, VDS = V VDS = 10V, ID = 1 nA VDS = V, IG = 10 mA VDS = 10V, VGS = V TA = 150C
10
17 12 250 0.15 5 2.5 10 12 3
10
17 12 250 0.15 5 2.5 10 12 3
mS mS S S pF pF
nV/Hz
VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = V, VGS = 10V VDS = V, VGS = 10V VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA
f = 1 kHz f = 100 MHz f = 1 kHz f = 100 MHz f = 1 MHz f = 1 MHz f = 100 kHz f = 100 MHz f = 100 MHz
dB 1 1 1
VDS = 20V, RL = 2 k VGS = 1/2 VGS(OFF) VDS = 10V, VG = V VDS = 10V, ID = 1 nA VDS = 10V, ID = 10 mA
0.9 0.9 0.9
1 1 1
0.9 0.9 0.9
TO78 Package
Pin Configuration
1 Source 1, 2 Gate 1, Drain 1, 4 Case, 5 Drain 2, 6 Gate 2, 7 Source 2, 8 Omitted
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01/99
C-1
Semiconductor Databook Section C Diode, Regulator & VCR Data Sheets
Diodes
DPAD 1, 2, 5, 10 PAD 1, 2, 5
Page
C-2 C-3
Regulators
J500 to J505 J506 to J511 J553 to J557 U553 to U557 C-4 C-5 C-6 C-7
Voltage Controlled Resistors

VCR2N, 4N, 7N VCR3P VCR11N C-8 C-9 C-10
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C-2
01/99
DPAD1, DPAD2, DPAD5, DPAD10
Dual Pico-AMP Diode

High Impedance Protection Circuits
Continuous Forward Gate Current Storage Temperature Range
50 mA 55C to +125C
At 25C free air temperature: Electrical Characteristics Reverse Current Breakdown Reverse Voltage Forward Voltage Drop Capacitance Differential Capacitance IR BVR VF CR |CR1 CR2|
DPAD1 Min Typ Max 1 45 0.8 1.5 0.8 0.2 45 Min
DPAD2 Typ Max 2 0.8 1.5 0.8 0.2 Unit pA V V pF pF
Process NJ01 Test Conditions VR = 20V IR = 1 A IF = 5 mA VR = 5 V VR1 = VR2 = 5 V f = 1 MHz f = 1 MHz
At 25C free air temperature: Electrical Characteristics Reverse Current Breakdown Reverse Voltage Forward Voltage Drop Capacitance Differential Capacitance IR BVR VF CR |CR1 CR2|
DPAD5 Min Typ Max 5 45 0.8 0.2 1.5 0.8 45 Min
DPAD10 Typ Max 10 0.8 0.2 1.5 2.0 Unit pA V V pF pF
Process NJ01 Test Conditions VR = 20V IR = 1 A IF = 5 mA VR = 5 V VR1 = VR2 = 5 V f = 1 MHz f = 1 MHz
TO72 Package
Pin Configuration
1 Cathode 1, 2 Anode 1, 3 Cathode 2, 4 Anode 2
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01/99
C-3
PAD1, PAD2, PAD5
Low Leakage Pico-AMP Diode

High Impedance Protection Circuits
Continuous Forward Gate Current Storage Temperature Range Lead Temperature
50 mA 55C to +125C 300C
At 25C free air temperature: Electrical Characteristics Reverse Current Breakdown Reverse Voltage Forward Voltage Drop Capacitance IR BVR VF CR
PAD1 Min Typ Max 1 45 0.8 1.5 0.8 45 Min
PAD2 Typ Max 2 0.8 1.5 0.8 Unit pA V V pF
Process NJ01 Test Conditions VR = 20V IR = 1 A IF = 5 mA VR = 5 V f = 1 MHz
At 25C free air temperature: Electrical Characteristics Reverse Current Breakdown Reverse Voltage Forward Voltage Drop Capacitance IR BVR VF CR
PAD5 Min Typ Max 5 45 0.8 1.5 0.8 Unit pA V V pF
Process NJ01 Test Conditions VR = 20V IR = 1 A IF = 5 mA VR = 5 V f = 1 MHz
TO-18 Package
Surface Mount TO-236AB Package

See Section G
Pin Configuration
1 Cathode, 2 Case, 3 Anode
Pin Configuration
1 Cathode, 2 Cathode, 3 Anode
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C-4
01/99
J500, J501, J502, J503, J504, J505
Current Regulator Diode

Current Regulation Current Limiting
Peak Operating Voltage Forward Current Reverse Current Operating & Storage Temperature Range
50 V 20 mA 50 mA 55C to 135C
At 25C free air temperature Electrical Characteristics Forward Current IF1
J500 Min Nom Max Min
J501 Nom 0.33 Typ 1.2 50 2.2 0.9 6 2 1.3 50 1.5 Max Min
J502 Nom 0.43 Typ 1.1 4.4 2 1.5 V V M pF Max 0.516 Unit mA
Process NJ16 Test Conditions VF = 25V
0.192 0.240 0.288 0.264 Typ
0.396 0.344
Limiting Voltage Peak Operating Voltage Dynamic Impedance Anode Cathode Capacitance
VL VOP Z fi CF 50 4
0.8 8 2
I F = 0.9 I F(MIN) I F = 1.1 I F(MAX) VF = 25V, f = 1 kHz VF = 25V, f = 1 kHz
J503 Min 0.448 Nom 0.56 Typ Max 0.672 Min 0.6
J504 Nom 0.75 Typ 1.7 50 0.8 1.4 2.5 2 1.9 50 0.5 Max 0.9 Min 0.8
J505 Nom 1 Typ 1.5 1.9 2 2.1 V V M pF Max 1.2 Unit mA
VL VOP Z fi CF 50 1.2
1.2 3.4 2
TO92 Two-Lead Package

Pin Configuration
Modified: 1 Anode, 2 Cathode
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01/99
C-5
J506, J507, J508, J509, J510, J511

Current Regulation Current Limiting
Peak Operating Voltage Forward Current Reverse Current Operating & Storage Temperature Range
50 V 20 mA 50 mA 55C to 135C
J507 Nom 1.8 Typ 2.5 50 0.2 2.0 1.0 2 2.8 50 0.2 Max 2.16 Min 1.9
1.8 1.4 2
J510 Nom 3.6 Typ 3.5 50 0.15 2.8 0.5 2 3.9 50 0.12 Max 4.3 Min 3.8
2.5 0.6 2

Pin Configuration
1 Anode, 2 Cathode
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C-6
01/99
J553, J554, J555, J556, J557

Current Regulation Current Limiting Biasing
Peak Operating Voltage Continuous Reverse Gate Current Continuous Device Power Dissipation Power Derating
50 V 50 mA 360 mW 2.88 mW/C
At 25C free air temperature Electrical Characteristics Regulator Current Limiting Voltage Peak Operating Voltage Dynamic Impedance Knee Impedance IF VL VOP 'ZD 'ZK
J553 Min 0.18 50 13 1 Typ 0.5 0.75 Max 0.75 1.3 50 Min 0.6
J554 Typ 1 0.55 5 0.4 Max 1.6 1.75 50 Min 1.4
J555 Typ 2 0.75 1.8 0.17 Max 2.6 2.15 Unit mA V V M M
Process NJ16 Test Conditions VF = 25V I F = 0.9 I F(MIN) I F = 1.1 I F(MAX) VF = 25V, f = 1 kHz VF = 25V, f = 1 kHz
J556 Min 2.4 50 1.0 0.09 Typ 3 0.75 Max 3.8 2.6 50 Min 3.6
J556 Typ 4.5 1.5 0.6 0.06 Max 5.3 3 Unit mA V V M M
Process NJ16 Test Conditions VF = 25V I F = 0.9 I F(MIN) I F = 1.1 I F(MAX) VF = 25V, f = 1 kHz VF = 25V, f = 1 kHz

Pin Configuration
1 Anode, 2 Cathode
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01/99
C-7
U553, U554, U555, U556, U557

Current Regulation Current Limiting Biasing
Peak Operating Voltage Continuous Reverse Gate Current Continuous Device Power Dissipation Power Derating
50 V 50 mA 360 mW 2.88 mW/C
U553 Min 0.18 50 13 1 Typ 0.5 0.75 Max 0.75 1.3 50 Min 0.6
U554 Typ 1 0.55 5 0.4 Max 1.6 1.75 50 Min 1.4
U555 Typ 2 0.75 1.8 0.17 Max 2.6 2.15 Unit mA V V M M
Process NJ16 Test Conditions VF = 25V I F = 0.8 I F(MIN) I F = 1.1 I F(MAX) VF = 25V (Pulsed) VF = 6V
U556 Min 2.4 50 1 0.09 Typ 3 0.75 Max 3.8 2.6 50 Min 3.6
U556 Typ 4.5 1.5 0.6 0.06 Max 5.3 3 Unit mA V V M M
Process NJ16 Test Conditions VF = 25V I F = 0.8 I F(MIN) I F = 1.1 I F(MAX) VF = 25V (Pulsed) VF = 6V
TO18 Package
Pin Configuration
1 Cathode, 2 Omitted, 3 Anode
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C-8
01/99
VCR2N, VCR4N, VCR7N
N-Channel Silicon Voltage Controlled Resistor JFET

Small Signal Attenuators Filters Amplifier Gain Control Oscillator Amplitude Control
15 V 10 mA 300 mW 2.4 mW/C
VCR2N At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Dynamic Electrical Characteristics Drain Source ON Resistance Drain Gate Capacitance Source Gate Capacitance rds(on) Cdg Csg 20 60 7.5 7.5 V(BR)GSS IGSS VGS(OFF) 1 NJ72 Min 15 5 3.5 Max
VCR4N NJ16 Min 15 0.2 3.5 7 Max Unit V nA V Process Test Conditions IG = 1 A, VDS = V VGS = 15V, VDS = V ID = 1 A, VDS = 10V
200
600 3 3
pF pF
VGS = V, ID = A VDG = 10V, IS = A VDG = 10V, ID = A
VCR7N At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Dynamic Electrical Characteristics Drain Source ON Resistance Drain Gate Capacitance Source Gate Capacitance rds(on) Cdg Csg 4000 8000 1.5 1.5 pF pF VGS = V, ID = A VDG = 10V, IS = A VDG = 10V, ID = A f = 1 kHz f = 1 MHz f = 1 MHz V(BR)GSS IGSS VGS(OFF) 2.5 NJ01 Min 15 0.1 5 Max Unit V nA V Process Test Conditions IG = 1 A, VDS = V VGS = 15V, VDS = V ID = 1 A, VDS = 10V
VCR2N & VCR4N TO18 Package

VCR7N TO72 Package

Pin Configuration
Pin Configuration
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01/99
C-9
VCR3P
P-Channel Silicon Voltage Controlled Resistor JFET

15 V 10 mA 300 mW 2.4 mW/C
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Dynamic Electrical Characteristics Drain Source ON Resistance Drain Gate Capacitance Source Gate Capacitance rds(on) Cdg Csg V(BR)GSS IGSS VGS(OFF)
VCR3P Min 15 20 1 5 Max Unit V nA V
Process PJ99 Test Conditions IG = 1 A, VDS = V VGS = 15V, VDS = V ID = 1 A, VDS = 10V
70
200 25 15
pF pF
VGS = V, ID = A VDG = 10V, IS = A VGS = 10V, ID = A
TO18 Package
Pin Configuration
1 Source, 2 Gate & Case, 3 Drain
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C-10
01/99
VCR11N
N-Channel Silicon Voltage Controlled Resistor JFET

15 V 10 mA 300 mW 2.4 mW/C
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage
Static Drain Source ON Resistance Ratio
VCR11N Min V(BR)GSS IGSS VGS(OFF) rDS(MIN) rDS(MAX) 8 .95 .95 25 0.2 12 1 1 Max Unit V nA V
Process NJ26 Test Conditions IG = 1 A, VDS = V VGS = 15V, VDS = V ID = 1 A, VDS = 10V VDS = 100 mV, rDS1 = 200 VGS1 = VGS2, rDS1 = 2 k pF pF
Dynamic Electrical Characteristics Drain Source ON Resistance Drain Gate Capacitance Source Gate Capacitance rds(on) Cdg Csg 70 200 7.5 7.5 VGS = V, ID = A VDG = 10V, IS = A VGS = 10V, ID = A f = 1 kHz f = 1 MHz f = 1 MHz
TO71 Package
Pin Configuration
1 Source , 2 Drain 1, 3 Gate 1, 5 Source 2, 6 Drain 2, 7 Gate 2
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01/99
D-1
Semiconductor Databook Section D Japanese JFET Equivalents
Data Chart
2SK17, IFN17 2SK40, IFN40 2SK59, IFN59 2SK105, IFN105 2SK113, IFN113 2SK152, IFN152 2SK363, IFN363 2SJ44, IFP44
Page
D-2 D-2 D-2 D-2 D-3 D-3 D-3 D-3
Data Sheets
IFN112 (2SK112) IFN146 (2SK146) IFN147 (2SK147) D-4 D-5 D-6
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D-2
01/99
Japanese Equivalent JFET Types
Japanese InterFET Process

Parameters Conditions Unit Limit
2SK17 IFN17 NJ16

N Channel
2SK40 IFN40 NJ16

N Channel
2SK59 IFN59 NJ16

N Channel
2SK105 IFN105 NJ16

N Channel
BVGSS IGSS VGS(off) IDSS gfs Ciss Crss
IG = 1.0 A VGS = ( ), VDS = VDS = ( ), ID = 1.0 nA VDS = ( ), VGS = VDS = ( ), VGS = VGS = ( ), VDS = ( ) VGS = ( ), VDS = ( )
V Min nA Max V Min/Max mA Min/Max mS Typ pF Typ pF Typ
20 0.10 (10 V) 0.5/ 6.0 (10 V) 0.3/6.5 (10 V) 2.0 (10 V) 4.0 () () 1.2 ( 10 V) () TO-226AA SGD
50 1.0 ( 30 V) 0.4/ 5.0 (15 V) 0.6/6.5 (15 V) 2.0 (15 V) 4.0 () (15 V) 1.2 () (15 V) TO-226AA SGD
30 1.0 (10 V) 0.4/ 5.0 (10 V) 0.3/1.4 (10 V) 1.5 (10 V)
50 1.0 ( 30 V) 0.25/ 4.5 (5.0 V) 0.5/12 (5.0 V) 2.1 (5.0 V) 4.0 () (10 V) 1.0 () (10 V)
Package Configuration Pin Configuration
TO-226AA SGD
TO-226AA DGS
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01/99
D-3
Japanese Equivalent JFET Types
2SK113 IFN113 NJ132

N Channel
2SK152 IFN152 NJ132L

N Channel
2SK363 IFN363 NJ450

N Channel
2SJ44 IFP44 PJ99

P Channel
Japanese InterFET Process

Unit Limit Parameters
50 1.0 ( 20 V) 0.3/10 (20 V) 5.0/150 (20 V) 20 (20 V) 10 () (20 V) 3.0 () (15 V) TO-18 SDG
20 0.1 (10 V) 0.5/ 2.0 (10 V) 5.0/20 (10 V) 30 (10 V) 15 () (10 V) 4.0 () (10 V) TO-18 SDG
40 1.0 ( 30 V) 0.3/ 1.2 (10 V) 5.0/30 (10 V) 60 (10 V) 75 () (10 V) 15 () (10 V) TO-18 DGS
25 1.0 (10 V) 0.2/1.5 (10 V) 1.0/18 (10 V) 9 (10 V) 15 () (10 V) 3 () (10 V) TO-18 DGS
V Min nA Max V Min/Max mA Min/Max mS Typ pF Typ pF Typ
BVGSS IGSS VGS(off) IDSS gfs Ciss Crss
Package Configuration Pin Configuration
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D-4
01/99
IFN112

Low-Noise, High Gain Equivalent to Japanese 2SK112
50 V 10 mA 360 mW 2.88 mW/C 65C to 200C
IFN112 Min Max Unit
Dynamic Electrical Characteristics Common Source Forward Transconductance
V(BR)GSS IGSS VGS(OFF) IDSS gfs Ciss Crss eN
50 0.25 1.2 0.1 1.2 9.0
V nA V mA
IG = 1 A, VDS = V VDS = V, VGS = 30V VDS = 15V, ID = 100 nA VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 10V, ID = 5.0 mA f = 1 kHz
7
Typ
34
mS

Common Source Reverse Transfer Capacitance Equivalent Short Circuit Input Noise Voltage
12 3 2.5
pF pF nV/Hz
f = 1 MHz f = 1 MHz f = 1 kHz
TO18 Package
Pin Configuration
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01/99
D-5
IFN146

Low-Noise Audio Amplifier Equivalent to Japanese 2SK146
40 V 10 mA 375 mW 3 mW/C 65C to 200C
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics Common Source Forward Transconductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Noise Figure Differential Gate Source Voltage gfs Ciss Crss NF
|VGS1 VGS2|
IFN146 Min V(BR)GSS IGSS VGS(OFF) IDSS 0.3 40 1 1 1.2 30 Typ Max Unit V nA A V mA
Process NJ450 Test Conditions IG = 1 A, VDS = V VGS = 30V, VDS = V VGS = 30V, VDS = V VDS = 10V, ID = 1 A VDS = 10V, VGS = V TA = 150C
30
40 75 15 1 20
mS pF pF dB mV
VDS = 10V, VGS = V IDSS = 5 mA VDS = 10V, VGS = V VDS = 10V, ID = A VDS = 10V, ID = 5 mA RG = 100 VDS = 10V, ID = 5 mA
f = 1 kHz f = 1 kHz f = 1 kHz f = 1 kHz
TO71 Package
Pin Configuration
1 Source, 2 Gate, 3 Drain, 5 Source, 6 Gate, 7 Drain
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D-6
01/99
IFN147

Low-Noise Audio Amplifier Equivalent to Japanese 2SK147
40 V 10 mA 300 mW 2.4 mW/C
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics Common Source Forward Transconductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Noise Figure gfs Ciss Crss NF 30 V(BR)GSS IGSS VGS(OFF) IDSS 0.3 5 Min 40
IFN147 Typ Max 1 1 1.2 30 Unit V nA A V mA
Process NJ450 Test Conditions IG = 1 A, VDS = V VGS = 30V, VDS = V VGS = 30V, VDS = V VDS = 10V, ID = 1 A VDS = 10V, VGS = V TA = 150C
40 75 15 1 10
mS pF pF dB dB
VDS = 10V, VGS = V IDSS = 5 mA VDS = 10V, VGS = V VDS = 10V, ID = VDS = 10V, ID = 5 mA RG = 100
f = 1 kHz f = 1 kHz f = 1 Hz f = 1 kHz f = 100 Hz
TO18 Package
Pin Configuration
1 Source, 2 Gate & Case, 3 Drain
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01/99
E-1
Semiconductor Databook Section E Small Outline (Surface Mount) Package Devices
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E-2
01/99
Small Outline (Surface Mount) Package Devices
N-Channel Silicon Junction Field-Effect Transistors

Device Type BVGSS
Min (V) @IG (A) Max (nA)
IGSS
@VGS (V)
VGS (OFF)
Limits Min Max (V) (V) Conditions VDS ID (V) (nA) Min (mA)
IDSS
Max (mA) @VDS (V)
SMP3369 SMP3370 SMP3458 SMP3459 SMP3460 SMP3819 SMP3821 SMP3822 SMP3823 SMP3824 SMP3966 SMP3967 SMP3967A SMP3968 SMP3968A SMP3969 SMP3969A SMP3970 SMP3971 SMP3972 SMP4091 SMP4092 SMP4093 SMP4117 SMP4118 SMP4119 SMP4220 SMP4221 SMP4222 SMP4223 SMP4224 SMP4302 SMP4303 SMP4304 SMP4338 SMP4339
40 40 50 50 50 25 50 50 30 50 30 30 30 30 30 30 30 40 40 40 40 40 40 40 40 40 30 30 30 30 30 30 30 30 50 50
1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 10 10 10 10 10 1.0 1.0 1.0 1.0 1.0
1.0 1.0 1.0 1.0 1.0 2.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 0.01 0.01 0.01 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0
30 30 30 30 30 15 30 30 20 30 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 15 15 15 20 20 15 15 15 30 30
4.0 2.0 2.0 4.0 2.0 0.5 5.0 2.0 1.0 0.6 1.0 2.0 0.3 0.6
6.5 3.2 7.8 3.4 1.8 8.0 4.0 6.0 8.0 8.0 6.0 5.0 5.0 3.0 3.0 1.7 1.7 10 5.0 3.0 10 7.0 5.0 1.8 3.0 6.0 4.0 6.3 8.0 8.0 8.0 4.0 6.0 10 1.0 1.8
20 20 20 20 20 15 10 10 10 15 10 20 20 20 20 20 20 20 20 20 20 20 20 10 10 10 15 15 15 15 15 20 20 20 15 15
1.0 1.0 1.0 1.0 1.0 2.0 1.0 1.0 1.0 0.5 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 10 10 10 100 100
0.5 0.1 3.0 0.8 0.2 2.0 0.5 2.0 4.0 4.0 2.0 2.5 2.5 1.0 1.0 0.4 0.4 50.0 25.0 5.0 30.0 15.0 8.0 0.03 0.08 0.2 0.5 2.0 5.0 3.0 2.0 0.5 4.0 0.5 0.2 0.5
2.5 0.6 15 4.0 1.0 20 2.5 10 20 20 10 10 5.0 5.0 2.0 2.0 150 75 30 0.09 0.24 0.6 3.0 6.0 15 18 20 5.0 10 15 0.6 1.5
30 30 20 20 20 15 15 15 15 15 20 20 20 20 20 20 20 20 20 20 20 20 20 10 10 10 15 15 15 15 15 20 20 20 15 15
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01/99
E-3
gfs
Min (mS) Max (mS) @VDS (V)
Ciss
Max @VDS (V) (pF) @[VGS] (V)
Crss
rds
Max ()
Process
SMP3369 SMP3370 SMP3458 SMP3459 SMP3460 SMP3819 SMP3821 SMP3822 SMP3823 SMP3824 SMP3966 SMP3967 SMP3967A SMP3968 SMP3968A SMP3969 SMP3969A SMP3970 SMP3971 SMP3972 SMP4091 SMP4092 SMP4093 SMP4117 SMP4118 SMP4119 SMP4220 SMP4221 SMP4222 SMP4223 SMP4224 SMP4302 SMP4303 SMP4304 SMP4338 SMP4339
0.6 0.3 2.5 1.5 0.8 2.0 1.5 3.0 3.5 3.5 2.5 2.5 2.0 2.0 1.3 1.3 0.07 0.08 0.1 1.0 2.0 2.5 3.0 2.0 1.0 2.0 1.0 0.6 0.8
2.5 2.5 10 6.0 4.5 6.5 4.5 6.5 6.5 6.5 0.21 0.25 0.33 4.0 5.0 6.0 7.0 7.5 1.8 2.4
30 30 20 20 20 15 15 15 15 15 20 20 20 20 20 20 10 10 10 15 15 15 15 15 20 20 20 15 15
20 8.0 20 8.0 18 [10] 18 [ 8.0] 18 [ 4.0] 8.0 6.0 6.0 6.0 6.0 6.0 5.0 5.0 5.0 5.0 5.0 5.0 25 25 25 16 16 16 3.0 3.0 3.0 6.0 6.0 3.0 6.0 6.0 6.0 6.0 6.0 6.0 7.0 15 15 15 15 15 20 20 20 20 20 20 20 20 20 20 20 20 20 10 10 10 15 15 15 15 15 15 20 20 20 15
3.0 3.0 5.0 5.0 5.0 4.0 2.0 2.0 2.0 2.0
30 30 30 30 30 15 15 15 15 15
250 220 30 60 100 30 50 80 2500 1700
NJ16 NJ16 NJ32 NJ16 NJ16 NJ32 NJ32 NJ32 NJ32 NJ32 NJ32 NJ26 NJ26 NJ26 NJ26 NJ16 NJ16 NJ132 NJ132 NJ132 NJ132 NJ132 NJ132 NJ01 NJ01 NJ01 NJ16 NJ16 NJ32 NJ32 NJ32 NJ26 NJ26 NJ26 NJ16 NJ16
1.5 [ 7.0] 1.3 20 1.3 20 1.3 20 1.3 20 1.3 1.3 6.0 6.0 6.0 20 20 [12] [12] [12]
5.0 [ 20] 5.0 [ 20] 5.0 [ 20] 1.5 10 1.5 10 1.5 2.0 2.0 2.0 2.0 2.0 2.0 2.0 3.0 3.0 3.0 10 15 15 15 15 15 15 20 20 20 15
Electrical Characteristics at TA = 25C
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E-4
01/99

Device Type BVGSS
IGSS
@VGS (V)
VGS (OFF)
IDSS
Max (mA) @VDS (V)
SMP4340 SMP4341 SMP4391 SMP4392 SMP4393 SMP4416 SMP4416A SMP4856 SMP4856A SMP4857 SMP4857A SMP4858 SMP4858A SMP4859 SMP4859A SMP4860 SMP4860A SMP4861 SMP4861A SMP4867 SMP4868 SMP4869 SMP5078 SMP5103 SMP5104 SMP5105 SMP5163 SMP5245 SMP5246 SMP5247 SMP5248 SMP5358 SMP5359 SMP5360 SMP5361 SMP5362
50 50 40 40 40 30 35 40 40 40 40 40 40 30 30 30 30 30 30 40 40 40 30 25 25 25 25 30 30 30 30 40 40 40 40 40
1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0
1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 10 1.0 1.0 1.0 5.0 1.0 1.0 1.0 1.0 1.0
30 30 20 20 20 20 20 20 20 20 20 20 20 15 15 15 15 15 15 30 30 30 20 15 15 15 15 20 20 20 20 20 20 20 20 20
1.0 2.0 4.0 2.0 0.5 2.5 4.0 4.0 2.0 2.0 0.8 0.8 4.0 4.0 2.0 2.0 0.8 0.8 0.7 1.0 1.8 0.5 0.5 0.5 0.5 0.4 1.0 0.5 1.5 1.0 0.5 0.8 0.8 1.0 2.0
3.0 6.0 10 5.0 3.0 6.0 6.0 10 10 6.0 6.0 4.0 4.0 10 10 6.0 6.0 4.0 4.0 2.0 3.0 5.0 8.0 4.0 4.0 4.0 8.0 6.0 4.0 8.0 8.0 3.0 4.0 4.0 6.0 7.0
15 15 20 20 20 15 15 15 15 15 15 15 15 15 15 15 15 15 15 20 20 20 15 15 15 15 15 15 15 15 15 15 15 15 15 15
100 100 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 10 10 10 10 100 100 100 100 100
1.2 3.0 50 25 5.0 5.0 5.0 50 50 20 20 8.0 8.0 50 50 20 20 8.0 8.0 0.4 1.0 2.5 4.0 1.0 2.0 5.0 1.0 5.0 1.5 8.0 4.0 0.5 0.6 1.5 2.5 4.0
3.6 9.0 150 100 30 15 15 100 100 80 80 100 100 80 80 1.2 3.0 7.5 25 8.0 6.0 15 40 15 7.0 24 20 1.0 1.6 3.0 5.0 8.0
15 15 20 20 20 15 15 15 15 15 15 15 15 15 15 15 15 15 15 20 20 20 15 15 15 15 15 15 15 15 15 15 15 15 15 15
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01/99
E-5
gfs
Ciss
Crss
rds
Max ()
Process
SMP4340 SMP4341 SMP4391 SMP4392 SMP4393 SMP4416 SMP4416A SMP4856 SMP4856A SMP4857 SMP4857A SMP4858 SMP4858A SMP4859 SMP4859A SMP4860 SMP4860A SMP4861 SMP4861A SMP4867 SMP4868 SMP4869 SMP5078 SMP5103 SMP5104 SMP5105 SMP5163 SMP5245 SMP5246 SMP5247 SMP5248 SMP5358 SMP5359 SMP5360 SMP5361 SMP5362
1.3 2.0 4.5 4.5 0.7 1.0 1.3 4.0 2.0 3.5 5.0 2.0 4.0 2.5 4.0 3.0 1.0 1.2 1.4 1.5 2.0
3.0 4.0 7.5 7.5 2.0 3.0 4.0 8.0 7.5 10 9.0 3.0 3.6 4.2 4.5 5.5
15 15 15 15 20 20 20 15 15 15 15 15 15 15 15 15 15 15 15 15 15
7.0 7.0 7.0 14 14 4.5 4.5 18 10 18 10 18 10 18 10 18 10 18 10 25 25 25 6.0 5.0 5.0 5.0 12 4.5 4.5 4.5 6.0 6.0 6.0 6.0 6.0 6.0
15 15 15 20 20 15 15 [10] [10] [10] [10] [10] [10] [10] [10] [10] [10] [10] 10 20 20 20 15 15 15 15 15 15 15 15 15 15 15 15 15 15
3.0 15 3.0 15 3.5 5 3.5 [ 12] 3.5 [ 7.0] 1.2 1.2 8.0 4.0 8.0 3.5 8.0 3.5 8.0 4.0 8.0 3.5 8.0 3.5 5.0 5.0 5.0 2.0 1.2 1.2 1.2 3.0 1.5 1.5 1.5 2.0 2.0 2.0 2.0 2.0 2.0 15 15 [10] [10] [10] [10] [10] [10] [10] [10] [10] [10] [10] 10 20 20 20 15 15 15 15 15 15 15 15 15 15 15 15 15 15
1500 800 30 60 100 25 25 40 40 60 60 25 25 40 40 60 60
NJ16 NJ16 NJ132 NJ132 NJ132 NJ26 NJ26 NJ132 NJ132 NJ132 NJ132 NJ132 NJ132 NJ132 NJ132 NJ132 NJ132 NJ132 NJ132 NJ16 NJ16 NJ16 NJ26 NJ26 NJ26 NJ26 NJ26 NJ26 NJ26 NJ26 NJ26 NJ16 NJ16 NJ16 NJ16 NJ32
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E-6
01/99

Device Type BVGSS
IGSS
@VGS (V)
VGS (OFF)
IDSS
Max (mA) @VDS (V)
SMP5363 SMP5364 SMP5397 SMP5398 SMP5457 SMP5458 SMP5459 SMP5484 SMP5485 SMP5486 SMP5555 SMP5556 SMP5557 SMP5558 SMP5638 SMP5639 SMP5640 SMP5653 SMP5654 SMP5668 SMP5669 SMP5670 SMP5949 SMP5950 SMP5951 SMP5952 SMP5953 SMP6451 SMP6452 SMP6453 SMP6454 SMPBC264A SMPBC264B SMPBC264C SMPBC264D SMPBF244A SMPBF244B
40 40 25 25 25 25 25 25 25 25 25 30 30 30 30 30 30 30 25 25 25 25 30 30 30 30 30 20 25 20 25 30 30 30 30 30 30
1.0 1.0 1.0 1.0 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 10 10 10 10 10 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 0.1 1.0 1.0
1.0 20 1.0 20 1.0 15 1.0 15 1.0 15 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 10 10 10 10 10 10 15 15 20 20 20 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 10 15 20 20 20 20 20 20
2.5 2.5 1.0 1.0 0.5 1.0 2.0 0.3 0.5 2.0 0.2 0.8 1.5 0.2 1.0 3.0 3.0 2.5 2.0 1.3 0.8 0.5 0.5 0.75 0.75 0.5 0.5 0.5 0.5 0.5 0.5
8.0 8.0 6.0 6.0 6.0 7.0 8.0 3.0 4.0 6.0 12 4.0 5.0 6.0 12 8.0 6.0 12 8.0 4.0 6.0 8.0 7.0 6.0 5.0 3.5 3.0 3.5 3.5 5.0 5.0
15 15 10 10 15 15 15 15 15 15 12 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 10 10 10 10 15 15 15 15 15 15
100 100 1.0 1.0 10 10 10 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 10 10 10 100 100 100 100 100 1.0 1.0 1.0 1.0 10 10 10 10 10 10
7.0 9.0 10 5.0 1.0 2.0 4.0 1.0 4.0 8.0 15 0.5 2.0 4.0 50 25 5.0 40 15 1.0 4.0 8.0 12 10 7.0 4.0 2.5 5.0 5.0 15 15 2.0 3.5 5.0 7.0 2.0 6.0
14 18 30 40 5.0 9.0 16 5.0 10 20 2.5 5.0 10 5.0 10 20 18 15 13 8.0 5.0 20 20 50 50 4.5 6.5 8.0 12 6.5 15
15 15 10 10 15 15 15 15 15 15 15 15 15 15 20 20 20 20 20 15 15 15 15 15 15 15 15 10 10 10 10 15 15 15 15 15 15
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01/99
E-7
gfs
Ciss
Crss
rds
Max ()
Process
SMP5363 SMP5364 SMP5397 SMP5398 SMP5457 SMP5458 SMP5459 SMP5484 SMP5485 SMP5486 SMP5555 SMP5556 SMP5557 SMP5558 SMP5638 SMP5639 SMP5640 SMP5653 SMP5654 SMP5668 SMP5669 SMP5670 SMP5949 SMP5950 SMP5951 SMP5952 SMP5953 SMP6451 SMP6452 SMP6453 SMP6454 SMPBC264A SMPBC264B SMPBC264C SMPBC264D SMPBF244A SMPBF244B
2.5 2.7 6.0 5.5 1.0 1.5 2.0 3.0 3.5 4.0 1.5 1.5 1.5 1.0 1.6 2.0 3.0 3.0 3.0 1.0 1.0 2.5 3.0 3.5 4.0 3.0 3.0
6.0 6.5 10 10 5.0 5.5 6.0 6.0 7.0 8.0 6.5 6.5 6.5 6.5 6.5
15 15 10 10 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15
6.0 6.0 5.0 5.5 7.0 7.0 7.0 5.0 5.0 5.0 5.0 6.0 6.0 6.0 10
15 15 10 10 15 15 15 15 15 15 15 15 15 15 [ 12]
2.0 2.0 1.2 1.3 3.0 3.0 3.0 1.0 1.0 1.2
15 15 10 10 15 15 15 15 15 15
30 60 100 50 100
NJ32 NJ32 NJ26L NJ26L NJ32 NJ32 NJ32 NJ26 NJ26 NJ26 NJ26 NJ16 NJ16 NJ16 NJ132 NJ72 NJ72 NJ72 NJ72 NJ32 NJ32 NJ32 NJ32 NJ32 NJ32 NJ32 NJ32 NJ132L NJ132L NJ132L NJ132L NJ26 NJ26 NJ26 NJ26 NJ26 NJ26
1.2 [10] 3.0 15 3.0 15 3.0 15 4.0 [ 12] 4.0 4.0 3.5 3.5 3.0 3.0 3.0 2.0 2.0 2.0 2.0 2.0 5.0 5.0 5.0 5.0 1.2 1.2 1.2 1.2 [ 12] [ 12] [ 12] [ 8.0] 15 15 15 15 15 15 15 15 10 10 10 10 15 15 15 15
10 [ 12] 10 [ 12] 10 [ 12] 10 [ 8.0] 7.0 15 7.0 7.0 6.0 6.0 6.0 6.0 6.0 25 25 25 25 4.0 4.0 4.0 4.0 15 15 15 15 15 15 15 10 10 10 10 15 15 15 15

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E-8
01/99

Device Type BVGSS
IGSS
@VGS (V)
VGS (OFF)
Limits Min Max (V) (V) Conditions VDS ID (nA) (V) [ID ](A) Min (mA)
IDSS
Max (mA) @VDS (V)
SMPBF244C SMPBF246A SMPBF246B SMPBF246C SMPBF256A SMPBF256B SMPBF256C SMPJ108 SMPJ109 SMPJ110 SMPJ110A SMPJ111 SMPJ111A SMPJ112 SMPJ112A SMPJ113 SMPJ113A SMPJ201 SMPJ202 SMPJ203 SMPJ210 SMPJ211 SMPJ212 SMPJ230 SMPJ231 SMPJ232 SMPJ300A SMPJ300B SMPJ300C SMPJ304 SMPJ305 SMPJ308 SMPJ309 SMPJ310 SMPU1897 SMPU1898 SMPU1899
30 25 25 25 30 30 30 25 25 25 25 35 40 35 40 35 40 40 40 40 25 25 25 40 40 40 25 25 25 30 30 25 25 25 40 40 40
1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0
5.0 5.0 5.0 5.0 5.0 5.0 5.0 3.0 3.0 3.0 3.0 1.0 2.0 1.0 2.0
20 15 15 15 20 20 20 15 15 15 15 15 1.0 15 1.0
0.5 0.6 0.6 0.6 0.5 0.5 0.5 3.0 2.0 0.5 0.5 3.0 5.0 1.0 2.0 1.0 0.3 0.8 2.0 1.0 25 4.0 0.5 1.5 3.0 1.5 2.0 2.5 2.0 0.5 1.0 1.0 2.0 5.0 2.0 1.0
8.0 14.5 14.5 14.5 7.5 7.5 7.5 10.0 6.0 4.0 4.0 10 10 5.0 7.0 3.0 5.0 1.5 4.0 10 3.0 4.5 6.0 3.0 5.0 6.0 3.0 4.0 5.0 6.0 3.0 6.5 4.0 6.5 10 7.0 5.0
15 15 15 15 15 15 15 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 20 20 20 15 15 15 20 20 20 10 10 10 15 15 10 10 10 20 20 20
10 10 10 10 10 10 10 [1.0] [1.0] [1.0] [1.0] 1.0 1.0 1.0 1.0 1.0 1.0 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0
12 30 60 110 3.0 6.0 11 80 40 10 10 20 30 5.0 15 2.0 8.0 0.2 0.9 4.0 2.0 7.0 15 0.7 2.0 5.0 4.0 7.0 12 5.0 1.0 12 12 24 30 15 8.0
25 80 140 250 7.0 13 18 1.0 4.5 20 15 20 40 3.0 6.0 10 9.0 15 25 15 8.0 60 30 60
15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 20 20 20 15 15 15 20 20 20 10 10 10 15 15 10 10 10 20 20 20
1.0 15 2.0 1.0 1.0 20 1.0 20 1.0 20 1.0 1.0 1.0 1.0 1.0 15 15 15 30 30
1.0 30 1.0 15 1.0 15 1.0 15 1.0 20 1.0 20 1.0 15 1.0 15 1.0 15 1.0 20 1.0 1.0 20 20
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01/99
E-9
gfs
Ciss
Crss
rds
Max ()
Process
SMPBF244C SMPBF246A SMPBF246B SMPBF246C SMPBF256A SMPBF256B SMPBF256C SMPJ108 SMPJ109 SMPJ110 SMPJ110A SMPJ111 SMPJ111A SMPJ112 SMPJ112A SMPJ113 SMPJ113A SMPJ201 SMPJ202 SMPJ203 SMPJ210 SMPJ211 SMPJ212 SMPJ230 SMPJ231 SMPJ232 SMPJ300A SMPJ300B SMPJ300C SMPJ304 SMPJ305 SMPJ308 SMPJ309 SMPJ310 SMPU1897 SMPU1898 SMPU1899
3.5 4.5 4.5 4.5
6.5
15 15 15 15
4.5 4.5 4.5 85 85 85 85 28 28 28 28 28 28 4.0 4.0 6.0 5.5 5.5 5.5 7.5 7.5 7.5 16 16 16
15 15 15
1.2 1.2 1.2 15 15 15 15 5.0 5.0 5.0 5.0 5.0 5.0 1.0 1.0 1.2 1.7 1.7 1.7 3.5 3.5 3.5 3.5 3.5 3.5
15 15 15 [10] [10] [10] [10] [10] [10] [10] [10] [10] [10] 20 20 20 10 10 10 [10] [10] [10] 20 20 20
8 12 18 25 30 30 50 50 100 80 30 50 80
NJ26 NJ132 NJ132 NJ132 NJ26 NJ26 NJ26 NJ450 NJ450 NJ450 NJ450 NJ132 NJ132 NJ132 NJ72 NJ72 NJ72 NJ16 NJ16 NJ16 NJ26L NJ26L NJ26L NJ16 NJ16 NJ16 NJ26L NJ26L NJ26L NJ26 NJ26 NJ72 NJ72 NJ72L NJ132 NJ132 NJ132
0.5 1.0 1.5 4.0 6.0 7.0 1.0 1.5 2.5 4.5 4.5 4.5 4.5 3.0 8.0 10 8.0
12 12 12 3.5 4.0 5.0 9.0 9.0 9.0 7.5
20 20 20 15 15 15 20 20 20 10 10 10 15 15 10 10 10
15 15 15 15 15 15 20 20 20 10 10 10 [10] [10] [10] 20 20 20
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E-10
01/99
P-Channel Silicon Junction Field-Effect Transistors

Device Type BVGSS
IGSS
@VGS (V)
VGS (OFF)
IDSS
Max (mA) @VDS (V)
SMP2608 SMP2609 SMP3329 SMP3330 SMP3331 SMP3332 SMP3820 SMP3993 SMP3994 SMP4381 SMP5018 SMP5019 SMP5020 SMP5021 SMP5033 SMP5114 SMP5115 SMP5116 SMP5460 SMP5461 SMP5462 SMPJ174 SMPJ175 SMPJ176 SMPJ177 SMPJ270 SMPJ271 SMPP1086 SMPP1087
30 30 20 20 20 20 20 25 25 25 30 30 25 25 20 30 30 30 40 40 40 30 30 30 30 30 30 30 30
1.0 1.0 10 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 10 1.0 1.0 1.0 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0
10 10 10 10 10 10 20 1.0 1.0 1.0 2.0 2.0 1.0 1.0 10 0.5 0.5 0.5 5.0 5.0 5.0 1.0 1.0 1.0 1.0 1.0 1.0 2.0 2.0
5 5 10 10 10 10 10 15 15 15 15 15 15 15 15 20 20 20 20 20 20 20 20 20 20 20 20 15 15
1.0 1.0 4.0 1.0 1.0 0.3 0.5 0.3 5.0 3.0 1.0 0.75 1.0 1.8 5.0 3.0 1.0 0.8 0.5 1.5
4.0 4.0 6.0 6.0 8.0 6.0 8.0 9.5 5.5 5.0 10 5.0 1.5 2.5 2.5 10 6.0 4.0 6.0 7.5 9.0 10 6.0 4.0 2.25 2.0 4.5 10 5.0
5 5 15 15 15 15 10 10 10 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15
1.0 1.0 10 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 10 10 10 10 1.0 1.0 1.0 1.0
0.9 2.0 1.0 2.0 5.0 1.0 0.3 10 2.0 3.0 10 5.0 0.3 1.0 0.3 30 5.0 1.0 2.0 4.0 20 7.0 2.0 1.5 2.0 6.0 10 5.0
4.5 10 3.0 6.0 15 6.0 15 12 1.2 3.5 3.5 90 60 25 5.0 9.0 16 135 70 35 20 15 50
5.0 5.0 10 10 10 10 10 10 10 15 20 20 15 15 15 18 15 15 15 15 15 15 15 15 15 15 15 20 20
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01/99
E-11
gfs
Ciss
Crss
rds
Max ()
Process
SMP2608 SMP2609 SMP3329 SMP3330 SMP3331 SMP3332 SMP3820 SMP3993 SMP3994 SMP4381 SMP5018 SMP5019 SMP5020 SMP5021 SMP5033 SMP5114 SMP5115 SMP5116 SMP5460 SMP5461 SMP5462 SMPJ174 SMPJ175 SMPJ176 SMPJ177 SMPJ270 SMPJ271 SMPP1086 SMPP1087
1.0 2.5 0.8 6.0 4.0 2.0 1.0 1.5 1.0 1.0 1.5 2.0 6.0 8.0
5.0 12 10 6.0 3.5 6.0 5.0 5.0 5.5 6.0 15 18
5.0 5.0 10 10 10 15 15 15 10 15 15 15 15 15
17 30 20 20 20 20 32 16 16 20 45 45 25 25 25 25 25 25 7.0 7.0 7.0 45 45
5.4 5.4 10 10 10 10 10 10 10 15 15 15 15 15 15 15 15 15 15 15 15 15 15
16 4.5 4.5 5.0 10 10 7.0 7.0 7.0 7.0 7.0 7.0 3.0 3.0 3.0 10 10
10 [10] [10] 15 [12] [7] 15 15 15 [12] [7.0] [5.0] 15 15 15 [12] [7.0]
150 300 75 150 75 100 150 85 125 250 300 75 150
PJ32 PJ32 PJ32 PJ32 PJ32 PJ32 PJ32 PJ99 PJ99 PJ32 PJ99 PJ99 PJ32 PJ32 PJ32 PJ99 PJ99 PJ99 PJ32 PJ32 PJ32 PJ99 PJ99 PJ99 PJ99 PJ99 PJ99 PJ99 PJ99
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01/99
F-1
Semiconductor Databook Section F Geometry & Process Information
Page
Page
NJ01 NJ14AL NJ16 NJ26 NJ26A NJ26L NJ30 NJ30L NJ32 PJ32 NJ36D NJ42
F-2 F-4 F-6 F-8 F-10 F-12 F-14 F-16 F-18 F-20 F-22 F-24
NJ72 NJ72L PJ99 NJ132 NJ132L NJ450 NJ450L NJ903 NJ903L NJ1800D NJ1800DL NJ3600L
F-26 F-28 F-30 F-32 F-34 F-36 F-38 F-40 F-42 F-44 F-46 F-48
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F-2
01/99
NJ01 Process
Silicon Junction Field-Effect Transistor

Low-Current Low Gate Leakage Current High Input Impedance
Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150C 65C to +175C
G S-D S-D G
Die Size = 0.016" X 0.016" All Bond Pads = 0.004" Sq. Substrate is also Gate.
Devices in this Databook based on the NJ01 Process. Datasheet

2N4117, 2N4117A 2N4118, 2N4118A 2N4119, 2N4119A IFN421, IFN422 IFN423, IFN424 IFN425, IFN426
Datasheet
DPAD1, DPAD2 DPAD5, DPAD10 PAD1, PAD2 PAD5 VCR7N
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics
NJ01 Process Min V(BR)GSS IGSS VGS(OFF) IDSS 0.5 0.03 40 Typ 50 0.5 10 6 0.6 Max Unit V pA V mA Test Conditions IG = 1 A, VDS = V VGS = 20V, VDS = V VDS = 10V, ID = 1 A VDS = 10V, VGS = V
gfs Ciss
175 2 0.9
S pF pF
VDS = 10V, VGS = V VDS = 10V, VGS = V VDS = 10V, VGS = V
www.interfet.com
01/99
F-3
NJ01 Process
Drain Current as a Function of VDS

VGS(OFF) = 2.1 V
Gfs as a Function of VGS(OFF) 250
250 VGS = V Drain Current in A 200 VGS = 0.5 V 150 VGS = 1.0 V 100 VGS = 1.5 V 50 VGS = 2.0 V 0 5 10 15 20 Transconductance in S
200 150 100 50
Drain to Source Voltage in Volts
Gate Source Cutoff Voltage in Volts
Drain Saturation Current as a Function of VGS(OFF) Drain Saturation Current in A 800 Leakage Current in pA 10k 1k 100 10 1.0 0.1 0 1 2 3 4 5 6 0
Leakage Current as a Function of Temperature
600
400
200
25
50
75
100
125
150
Ambient Temperature C
Input Capacitance as a Function of VGS 4 Feedback Capacitance in pF Input Capacitance in pF VDS = V 3 VDS = 10 V 2 2.0
Feedback Capacitance as a Function of VGS VDS = V 1.5 VDS = 10 V 1.0
0.5
0.1
1 Gate Source Voltage in Volts
10
20
0.1
10
20
F-4
01/99
NJ14AL Process

Low-Noise, High Gain Amplifier Rf AMP to 1.0 Ghz
G S-D S-D G
Die Size = 0.016" X 0.016" All Round Bond Pads = 0.0028" All Square Bond Pads = 0.004" Substrate is also Gate.
Devices in this Databook based on the NJ14AL Process. Datasheet

IF140, IF140A IF142
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics
NJ14AL Process Min V(BR)GSS IGSS VGS(OFF) IDSS 0.5 0.5 10 15 Typ 22 2.0 100 7 20 Max Unit V pA V mA Test Conditions IG = 1 A, VDS = V VGS = 10V, VDS = V VGS = 10V, ID = 1 nA VDS = 10V, VGS = V
gfs Ciss eN
5.5 2.3 0.5 4
mS pF pF
Common Source Input Capacitance Equivalent Noise Voltage
nV/HZ VDS = 10V, ID = 5 mA
www.interfet.com
01/99
F-5
NJ14AL Process

VGS(OFF) = 2.2 V
Gfs as a Function of VGS(OFF) 10 Transconductance in mS
10 Vgs = V Drain Current in A 8 Vgs = 0.5 V 6 Vgs = 1.0 V 4 Vgs = 1.5 V 2 Vgs = 2.0 V 0 5 10 15 20
8 6 4 2
Drain Saturation Current as a Function of VGS(OFF) Drain Saturation Current in mA 25 20 15 10 5 Noise Voltage in nV/Hz 6
Noise as a Function of Frequency
4 VDG = 4 V ID = 5 mA 2
10
100
1K Frequency in Hz
10K
100K
Noise as a Function of Temperature 8 f = 1 kHz f = 100 kHz 4 Input Capacitance in pF Noise Voltage in V/Hz 3.5 3.0
Input Capacitance as a Function of VGS
VDS = V 2.5 VDS = 5 V 2.0 1.5
100
150
200
250
300
350
12
16
Temperature (K)
Gate Source Voltage in Volts
F-6
01/99
NJ16 Process

Low Current Switch General Purpose Amplifier High Breakdown Voltage
G S-D S-D G

2N3954, 2N3955 2N3956 2N3957, 2N3958 2N4220, 2N4220A 2N4221, 2N4221A 2N4338, 2N4339 2N4340, 2N4341 2N4867, 2N4867A 2N4868, 2N4868A 2N4869, 2N4869A
Datasheet
2SK17, 2SK40 2SK59, 2SK105 IFN17, IFN40 IFN59, IFN105 J201, J202 J203, J204 J230, J231 J232 J500, J501 J502, J503
Datasheet
J504, J505 J506, J507 J508, J509 J510, J511 J553, J554 J555, J556 J557 U553, U554 U555, U556 U557 VCR4N
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Forward Transconductance Input Capacitance Feedback Capacitance Equivalent Noise Voltage gfs Ciss Crss eN 2.2 3.5 1.2 6 mS pF pF V(BR)GSS IGSS IDSS VGS(OFF) 0.2 0.8 Min 50 Typ 60 10 100 9 5.5 Max Unit V pA mA V
NJ16 Process Test Conditions IG = 1 A, VDS = V VGS = 30V, VDS = V VDS = 15V, VGS = V VDS = 15V, ID = 1 nA
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01/99
F-7
NJ16 Process

VGS(OFF) = 2.5 V
Gfs as a Function of VGS(OFF) 3.0 Transconductance in mS
5 VGS = V Drain Current in A 4 VGS = 0.5 V 3 VGS = 1.0 V 2 VGS = 1.5 V 1 VGS = 2.0 V 0 5 10 15 20
2.5 1.5 1.0 0.5
Drain Saturation Current as a Function of VGS(OFF) Drain Saturation Current in mA 10 8 6 4 2 Noise Voltage in nV/Hz 30
Noise as a Function of Frequency
20
10
10
100
1K Frequency in Hz
10K
100K
Input Capacitance as a Function of VGS 7 Input Capacitance in pF 6 5 4 3 2 0 4 8 12 16 VDS = V VDS = 5 V VDS = 10 V Feedback Capacitance in pF 5 4
Feedback Capacitance as a Function of VGS
VDS = V 3 VDS = 5 V 2 1 VDS = 10 V
12
16
F-8
01/99
NJ26 Process

G S-D S-D G
Devices in this Databook based on the NJ26A Process. Datasheet

2N4416, 2N4416A 2N5484, 2N5485 2N5486 J304, J305 VCR11N
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Forward Transconductance Input Capacitance Feedback Capacitance Equivalent Noise Voltage gfs Ciss Crss eN 6 4.3 1 4 5.0 1.5 mS pF pF V(BR)GSS IGSS IDSS VGS(OFF) 2 1 Min 30 Typ 40 10 100 22 5 Max Unit V pA mA V
www.interfet.com
01/99
F-9
NJ26 Process

VGS(OFF) = 2.1 V
10 VGS = V Drain Current in mA 8 VGS = 0.5 V 6 VGS = 1.0 V 4 VGS = 1.5 V 2 VGS = 2.0 V 0 5 10 15 20
8 6 4 2
Drain Saturation Current as a Function of VGS(OFF) Drain Saturation Current in mA Drain Saturation Current in mA 25 20 15 10 5 20 16 12 8 4
IDSS as a Function of RDS
100
150
200
250
300
Drain Source (ON) Resistance in
Input Capacitance as a Function of VGS 5 Input Capacitance in pF 4 3 2 1 VDS = V VDS = 15 V Feedback Capacitance in pF 2.5 2.0 1.5 1.0 0.5
VDS = V VDS = 5 V
12
16
12
16
F-10
01/99
NJ26A Process

G S-D S-D G
Devices in this Databook based on the NJ26A Process. Datasheet

2N4416, 2N4416A
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Forward Transconductance Input Capacitance Feedback Capacitance Equivalent Noise Voltage gfs Ciss Crss eN 6 4 1 4 4.5 1.2 mS pF pF V(BR)GSS IGSS IDSS VGS(OFF) 2 1 Min 30 Typ 40 10 100 22 5 Max Unit V pA mA V
NJ26A Process Test Conditions IG = 1 A, VDS = V VGS = 20V, VDS = V VDS = 15V, VGS = V VDS = 15V, ID = 1 nA
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01/99
F-11
NJ26A Process

VGS(OFF) = 2.1 V
8 6 4 2
100
150
200
250
300
VDS = V VDS = 5 V
12
16
12
16
F-12
01/99
NJ26L Process

G S-D S-D G
Devices in this Databook based on the NJ26L Process. Datasheet

2N5397, 2N5398 J210, J211, J212
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Forward Transconductance Input Capacitance Feedback Capacitance Equivalent Noise Voltage gfs Ciss Crss eN 8 5 1.5 2.5 mS pF pF V(BR)GSS IGSS IDSS VGS(OFF) 2 0.5 Min 25 Typ 30 10 100 40 6 Max Unit V pA mA V
NJ26L Process Test Conditions IG = 1 A, VDS = V VGS = 15V, VDS = V VDS = 15V, VGS = V VDS = 15V, ID = 1 nA
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01/99
F-13
NJ26L Process

VGS(OFF) = 2.5 V
9 8 7 6 5 0 1 2 3 4 5 6
Drain Saturation Current as a Function of VGS(OFF) Forward Transconductance in mS Drain Saturation Current in mA 35 30 25 20 15 10 5 0 1 2 3 4 5 6 10 8 6
Forward Tranconductance vs. Drain Current
IDSS = 10 mA IDSS = 16 mA IDSS = 24 mA
4 2
0.1
1 Drain Current in mA
10
20
Drain Source Cutoff Voltage in Volts
Input Capacitance as a Function of VGS 7 Feedback Capacitance in pF Input Capacitance in pF 6 VDS = 5 V 5 VDS = 15 V 4 3 2.5 2.0 1.5 1.0 0.5
VDS = 5 V VDS = 15 V
12
16
12
16
F-14
01/99
NJ30 Process

G S-D S-D G
This process available for customer-specified applications.
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Forward Transconductance Input Capacitance Feedback Capacitance Equivalent Noise Voltage gfs Ciss Crss eN 6 4.3 1 4 5 1.5 mS pF pF V(BR)GSS IGSS IDSS VGS(OFF) 2 1 Min 30 Typ 40 10 100 22 5 Max Unit V pA mA V
www.interfet.com
01/99
F-15
NJ30 Process

VGS(OFF) = 2.1 V
8 6 4 2
100
150
200
250
300
VDS = V VDS = 5 V
12
16
12
16
F-16
01/99
NJ30L Process

G S-D S-D G

2N5911, 2N5912 IFN5911, IFN5912 SMP5911 SMP5912
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Forward Transconductance Input Capacitance Feedback Capacitance Equivalent Noise Voltage gfs Ciss Crss eN 8 5 1.5 2.5 mS pF pF V(BR)GSS IGSS IDSS VGS(OFF) 2 0.5 Min 25 Typ 30 10 100 40 6 Max Unit V pA mA V
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01/99
F-17
NJ30L Process

VGS(OFF) = 2.5 V
9 8 7 6 5 0 1 2 3 4 5 6
Drain Saturation Current as a Function of VGS(OFF) Forward Transconductance in mS Drain Saturation Current in mA 35 30 25 20 15 10 5 0 1 2 3 4 5 6 10 8 6
Forward Tranconductance vs. Drain Current
IDSS = 10 mA IDSS = 16 mA IDSS = 24 mA
4 2
0.1
10
20
Input Capacitance as a Function of VGS 7 Feedback Capacitance in pF Input Capacitance in pF 6 VDS = 5 V 5 VDS = 15 V 4 3 2.5 2.0 1.5 1.0 0.5
12
16
12
16
F-18
01/99
NJ32 Process

General Purpose Amplifier
G S-D S-D G

2N3821, 2N3822 2N3823, 2N3824 2N4222, 2N4222A
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Forward Transconductance Input Capacitance Feedback Capacitance Equivalent Noise Voltage gfs Ciss Crss eN 4 6 1.3 7 7.0 3 mS pF pF V(BR)GSS IGSS IDSS VGS(OFF) 1 0.5 Min 25 Typ 50 10 100 22 6 Max Unit V pA mA V
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01/99
F-19
NJ32 Process

VGS(OFF) = 2.2 V
5 4 3 2 1 0 2 4 6 8
Drain Saturation Current as a Function of VGS(OFF) Drain Saturation Current in mA 20 Drain Current in mA 24
Drain Current as a Function of VGS VD = 15 V 20 16 12 8 4 0 2 4 6 8 IDSS = 24 mA IDSS = 18 mA IDSS = 14 mA IDSS = 10 mA IDSS = 7 mA
15
10
Input Capacitance vs. Gate Source Voltage 10 8 VDS = V 6 4 2 VDS = 5 V VDS = 10 V Feedback Capacitance in pF Input Capacitance in pF 10 8 6 4 2
Feedback Capacitance vs. Gate Source Voltage
VDS = V VDS = 5 V
VDS = 10 V 0 4 8 12 16
12
16
F-20
01/99
PJ32 Process

General Purpose Amplifier
G S-D S-D G
Devices in this Databook based on the PJ32 Process. Datasheet

2N5020, 2N5021 2N5460, 2N5461 2N5462
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Forward Transconductance Input Capacitance Feedback Capacitance Equivalent Noise Voltage gfs Ciss Crss eN 2.5 3.2 1.7 10 mS pF pF V(BR)GSS IGSS IDSS VGS(OFF) 1 0.5 Min 30 Typ 50 1 2 15 7 Max Unit V nA mA V
PJ32 Process Test Conditions IG = 1 A, VDS = VGS = 15V, VDS = VDS = 15V, VGS = VDS = 15V, ID = 1 nA
VDS = 15V, VGS = VDS = , VGS = 10 VDS = , VGS = 10
nV/HZ VDS = 10V, VGS =
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01/99
F-21
PJ32 Process

VGS(OFF) = 2.5 V
2.5 2.0 1.5 1.0 0.5 0 1 2 3 4 5 6
Drain Saturation Current as a Function of VGS(OFF) Drain Source (on) Resistance in Drain Saturation Current in mA 10 8 6 4 2 600 500 400 300 200 100 0
Correlation of Rds(on) with VGS (100A)
Input Capacitance as a Function of VGS 10 Input Capacitance in pF 8 6 4 2 VDS = V Feedback Capacitance in pF 10 8 6
Feedback Capacitance vs. Gate Source Voltage
VDS = V 4 2 VDS = 5 V VDS = 10 V
12
16
12
16
F-22
01/99
NJ36D Process

Monolithic Dual Construction High Frequency Amplifier Low-Noise Amplifier
S D G
G D S
Devices in this Databook based on the NJ36D Process. Datasheet

2N5911, 2N5912 IFN5911, IFN5912
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Drain Source ON Resistance Forward Transconductance Input Capacitance Feedback Capacitance Equivalent Noise Voltage Differential Gate Source Voltage rds(on) gfs Ciss Crss eN
VGS1 VGS2
NJ36D Process Min V(BR)GSS IGSS IDSS VGS(OFF) 1 0.5 25 Typ 35 0.05 0.1 40 8 Max Unit V nA mA V Test Conditions IG = 1 mA, VDS = V VGS = 15V, VDS = V VDS = 15V, VGS = V VDS = 15V, ID = 1 nA
90 8.5 5.5 1.5 5 5 20
250 7.0 3 100
mS pF pF mV
ID = mA, VGS = V VDS = 15V, VGS = V VDS = 10V, VGS = V VDS = 10V, VGS = V VDG = 15V, ID = 5 mA
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01/99
F-23
NJ36D Process

VGS(OFF) = 4.2 V
Gfs as a Function of VGS(OFF) 12 Transconductance in mM
30 Vgs = V Drain Current in mA 20 Vgs = 1 V Vgs = 2 V 10 Vgs = 3 V Vgs = 4 V 0 5 10 15 20
10 8 6 4 2 0 1 2 3 4 5 6
Drain Saturation Current as a Function of VGS(OFF) Forward Transconductance in mS Drain Saturation Current in mA 50 40 30 20 10 10
Forward Tranconductance vs. Drain Current IDSS = 10 mA 8 IDSS = 15 mA 6 IDSS = 25 mA 4 2
0.1
10
20
Input Capacitance as a Function of VGS 9 Input Capacitance in pF 8 VDS = V 7 VDS = 5 V 6 VDS = 10 V 5 4 3 0 1 2 3 4 5 6 7 0 Feedback Capacitance in pF 2.5
Feedback Capacitance as a Function of VGS VDS = V 2.0 1.5 1.0 0.5 VDS = 5 V VDS = 10 V
12
16
F-24
01/99
NJ42 Process

General Purpose Amplifier High Breakdown Voltage
S D S
Die Size = 0.032" X 0.032" All Bond Pads = 0.004", Dia. Substrate is also Gate.

2N6449, 2N6450 IFN6449, IFN6450
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Forward Transconductance Input Capacitance Feedback Capacitance Equivalent Noise Voltage gfs Ciss Crss eN 800 6 2 10 10 5 S pF pF V(BR)GSS IGSS IDSS VGS(OFF) 2 2 Min 300 Typ 400 1 10 10 12 Max Unit V nA mA V
nV/HZ VDS = 15V, VGS = V
www.interfet.com
01/99
F-25
NJ42 Process

VGS(OFF) = 4.2 V
3.0 VGS = V Drain Current in mA 2.0 VGS = 1 V VGS = 2 V 1.0 VGS = 3 V VGS = 4 V 0 5 10 15 20
1.0 0.8 0.6 0.4 0.2 2 4 6 8 10 12
Drain Saturation Current in mA
Zero Gate Voltage Drain Current in mA
Drain Saturation Current as a Function of VGS(OFF)
Drain Saturation Current as a Function of Temperature
16 VDS = 150 V VDS = 30 V 12 IDSS = 9 mA IDSS = 5.5 mA IDSS = 2.5 mA 25 0 75 125 175
10
75
Free Air Temperature in C
Output Admittance as a Function of VGS 1.0 Output Admittance in mS 0.8 0.6 0.4 IDSS = 2.5 mA 0.2 IDSS = 5.5 mA 10 8 6 4 2
Capacitance as a Function of VGS VDS = 30 V VDS = 50 V
Capacitance in pF
10
20
30
40
50
0.1
10
20
Drain Source Voltage in Volts
F-26
01/99
NJ72 Process

VHF/UHF Amplifier
G S-D S-D G

IFN5564, IFN5565 IFN5566 J308, J309 J308, J309 J310
Datasheet
U308, U309 U430, U431 VCR2N
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Forward Transconductance Drain Source ON Resistance Input Capacitance Feedback Capacitance gfs rds(on) Ciss Crss 22 40 6.5 2.5 mS pF pF V(BR)GSS IGSS IDSS VGS(OFF) 5 1 Min 25 Typ 40 10 100 90 5.5 Max Unit V pA mA V
VDS = 15V, VGS = V ID = 1 mA, VGS = V VDS = V, VGS = 10V VDS = V, VGS = 10V
www.interfet.com
01/99
F-27
NJ72 Process

VGS(OFF) = 2.3 V
20 15 10 5
Drain Saturation Current as a Function of VGS(OFF) Drain Source (on) Resistance in Drain Saturation Current in mA 100 80 60 40 20 80 70 60 50 40 30 20 10 0 1
Rds as a Function of VGS(OFF)
Input Capacitance as a Function of VGS 15 13 VDS = V 11 9 7 5 0 4 8 12 16 Gate Source Voltage in Volts VDS = 5 V VDS = 10 V Feedback Capacitance in pF Input Capacitance in pF 7 6 5 4
VDS = V VDS = 5 V VDS = 10 V
3 2 0 4 8 12 16 Gate Source Voltage in Volts
F-28
01/99
NJ72L Process

VHF/UHF Amplifier
Absolute maximum ratings at 25C free-air temperature.
G S-D S-D G

U310 U311 U350
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Forward Transconductance Drain Source ON Resistance Input Capacitance Feedback Capacitance gfs rds(on) Ciss Crss 22 40 7 2.5 mS pF pF V(BR)GSS IGSS IDSS VGS(OFF) 5 1 Min 20 Typ 25 10 100 90 5.5 Max Unit V pA mA V
VDS = 15V, VGS = V ID = 1 mA, VGS = V VDS = V, VGS = 10V VDS = V, VGS = 10V
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01/99
F-29
NJ72L Process

VGS(OFF) = 2.3 V
20 15 10 5
Drain Saturation Current as a Function of VGS(OFF) Drain Source (on) Resistance in Drain Saturation Current in mA 100 80 60 40 20 80 70 60 50 40 30 20 10 0 1
Rds as a Function of VGS(OFF)
Input Capacitance as a Function of VGS 15 13 VDS = V 11 9 7 5 0 4 8 12 16 Gate Source Voltage in Volts VDS = 5 V VDS = 10 V Feedback Capacitance in pF Input Capacitance in pF 7 6 5 4
3 2 0 4 8 12 16 Gate Source Voltage in Volts
F-30
01/99
PJ99 Process

General Purpose Amplifier Analog Switch
G S-D S-D G
Devices in this Databook based on the PJ99 Process. Datasheet

2N3993, 2N3993A 2N3994, 2N3994A 2N5114, 2N5115 2N5116 2SJ44 IFN5114, IFN5115 IFN5116
Datasheet
IFP44 J174, J175 J176, J177 P1086, P1087 VCR3P
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Drain Source ON Resistance Forward Transconductance Input Capacitance Feedback Capacitance Equivalent Noise Voltage Turn On Delay Time Rise Time Turn Off Delay Time Fall Time rds(on) gfs Ciss Ciss eN td(on) tr td(off) tf 75 15 18 4.5 8 5 10 6 5 mS pF pF ns ns ns ns V(BR)GSS IGSS IDSS VGS(OFF) 5 1 Min 30 Typ 40 0.5 1 60 8 Max Unit V nA mA V
PJ99 Process Test Conditions IG = 1 A, VDS = V VGS = 20V, VDS = V VDS = 15V, VGS = V VDS = 15V, ID = 1 nA
ID = 1 mA, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = V, VGS = 10V
nV/HZ VDS = 10V, VGS = V VDD = 10V, ID(ON) = 15 mA RL = 580 , VGS(ON) = V VGS(OFF) = 12V
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01/99
F-31
PJ99 Process

VGS(OFF) = 2.4 V
25 VGS = V Drain Current in A 20 VGS = 0.5 V 15 VGS = 1.0 V 10 VGS = 1.5 V 5 VGS = 2.0 V 0 5 10 15 20
20
15
10
10
Drain Saturation Current as a Function of VGS(OFF) Drain Source (on) Resistance in Drain Saturation Current in mA 80 125
60
100
40
75
20
50
25 0 20 40 60 80 100 Drain Saturation Current in mA
10
Input Capacitance as a Function of VGS 24 Feedback Capacitance in pF VDS = V Input Capacitance in pF 12
VDS = V 8
16 VDS = 10 V 8
4 VDS = 10 V
0.1
10
20
0.1
10
20
F-32
01/99
NJ132 Process

High Speed Switch Low-Noise Amplifier
G S-D S-D G

2N4391, 2N4392 2N4393 2N4856, 2N4857 2N4858, 2N4859 2N4860, 2N4861 2N4856A, 2N4857A 2N4858A, 2N4859A
Datasheet
2SK113 IFN113 2N4860A, 2N4861A J111, J112 J113
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Drain Source ON Resistance Input Capacitance Feedback Capacitance Turn On Delay Time Rise Time Turn Off Delay Time rds(on) Ciss Ciss td(on) tr td(off) 25 12 2.5 6 5 50 pF pF ns ns ns V(BR)GSS IGSS IDSS VGS(OFF) 10 0.5 Min 30 Typ 45 10 100 150 7 Max Unit V pA mA V
ID = 1 mA, VGSS = V VDS = 20V, VGS = V VDS = V, VGS = 10V VDD = 10V, ID = 10 mA RL = 10V, VGS(ON) = V VGS(OFF) = 6V
www.interfet.com
01/99
F-33
NJ132 Process

VGS(OFF) = 4.5 V
100 VGS = V Drain Current in mA 80 VGS = 1 V 60 VGS = 2 V 40 VGS = 3 V 20 VGS = 4 V 0 5 10 15 20
30
20
10
Drain Saturation Current as a Function of VGS(OFF) Drain Saturation Current in mA 150 Drain Source Resistance in 60 50 40 30 20 10 0 1 2 3 4 5 6 7 0 20
100
50
40
60
80
100
120
140
Input Capacitance as a Function of VGS 20 Input Capacitance in pF 16 12 8 4 VDS = V VDS = 15 V Feedback Capacitance in pF 20 16 12 8
VDS = V 4
12
16
20
12
16
20
F-34
01/99
NJ132L Process

Low-Noise Amplifier
G S-D S-D G

2N6451, 2N6452 2N6453, 2N6454 IF1320 IFN152 2SK152
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Forward Transconductance Input Capacitance Feedback Capacitance Equivalent Noise Voltage (pulsed) gfs gfs Ciss Ciss eN 15 15 15 3.5 1 mS mS pF pF V(BR)GSS IGSS IDSS VGS(OFF) 5 0.5 Min 15 Typ 25 50 100 100 7 Max Unit V nA mA V
VDS = 10V, VGS = V VDS = 10V, ID = 5 mA VDS = 10V, VGS = V VDS = V, VGS = 10V
www.interfet.com
01/99
F-35
NJ132L Process

VGS(OFF) = 2.5 V
Drain Current as a Function of VGS(OFF) 10 IDSS = 8 mA
50 VGS = V Drain Current in mA VGS = 0.5 V 30 VGS = 1.0 V 20 VGS = 1.5 V 10 VGS = 2.0 V 0 5 10 15 20 Drain Current in mA 40
8 6
125C 25C 55C
4 2
0.2
0.4
0.6
0.8
1.0
Transconductance as a Function of Drain Current 50 Transconductance in mS 40 30 IDSS = 8 mA 20 10 IDSS = 40 mA 20
Capacitance as a Function of Gate Source Voltage Ciss Capacitance in pF 16 12 8 4 Crss
12
16
20
10
Drain Current in mA
Noise as a Function of Frequency Equivalent Noise Voltage (nV/Hz) Equivalent Noise Voltage (nV/Hz) 1.5 VDG = 4 V ID = 5 mA 1.0 2.0
Noise as a Function of Temperature
f = 1 kHz 1.5 f = 10 kHz
1.0
0.5
0.5
10
100
1K Frequency in Hz
10K
100K
100
150
200
250
300
350
Temperature (K)
F-36
01/99
NJ450 Process

LOW R(on) Switch Low-Noise, High Gain Amplifier
S-D

2SK363 IFN146, IFN147 IFN363 J108, J109 J110, J110A
G
S-D
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Drain Source ON Resistance Forward Transconductance Input Capacitance Feedback Capacitance rds(on) gfs Ciss Crss 7 250 20 10 mS pF pF V(BR)GSS IGSS IDSS VGS(OFF) 5 0.1 Min 25 Typ 30 50 1000 600 10 Max Unit V pA mA V
ID = 1 mA, VGS = V VDS = 15V, VGS = V VDS = V, VGS = 10V VDS = V, VGS = 10V
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01/99
F-37
NJ450 Process

VGS(OFF) = 4.5 V
300 VGS = V Drain Current in mA 250 VGS = 1 V 200 VGS = 2 V 150 VGS = 3 V 100 VGS = 4 V 0 5 10 15 20
300
150
Drain Saturation Current as a Function of VGS(OFF) Drain Source (on) Resistance in Drain Saturation Current in mA 500 400 300 200 100 30 25 20 15 10 5 0 1
RDS as a Function of VGS(OFF)
Input Capacitance as a Function of VGS 100 80 VDS = V 60 VDS = 5 V 40 20 VDS = 10 V Feedback Capacitance in pF Input Capacitance in pF 100 80 60
VDS = V 40 20 VDS = 5 V VDS = 10 V
12
16
12
16
F-38
01/99
NJ450L Process

S-D

2N6550 IF4500 IF4501 IFN860
G
S-D
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Forward Transconductance (Pulsed) Input Capacitance Feedback Capacitance Equivalent Noise Voltage gfs Ciss Crss eN 100 35 10 0.9 mS pF pF V(BR)GSS IGSS IDSS VGS(OFF) 5 0.1 4 Min 25 Typ 25 50 Max Unit V pA mA V
VDS = 15V, VGS = V VDS = V, VGS = 10V VDS = V, VGS = 10V
nV/HZ VDG = 4V, ID = 5 mA
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01/99
F-39
NJ450L Process

VGS(OFF) = 2.2 V
100
50
0.5
1.0
1.5
2.0
2.5
3.0
Drain Saturation Current as a Function of VGS(OFF) Drain Saturation Current in mA 500 Transconductance in mS 400 300 200 100 120 100 80 60 40 20 0 50
Gfs as a Function of IDSS
100
150
200
250
300
Noise as a Function of Frequency 4.0 Noise Voltage in nV/Hz IDSS = 35 mA VDG = 4 V ID = 5 mA 100
Capacitance as a Function of VGS VDS = Capacitance in pF 80 60 40 Ciss 20 Crss
3.0
2.0
1.0
10
100
1K Frequency in Hz
10K
100K
12
16
F-40
01/99
NJ903 Process

Analog Switch Digital Switch Low-Noise Amplifier
S-D
G D-S
Devices in this Databook based on the NJ903 Process.
S-D
Datasheet
IFN5432 IFN5433 IFN5434
G
D-S
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Drain Source ON Resistance Input Capacitance Feedback Capacitance Turn On Delay Time Rise Time Turn Off Delay Time Fall Time rds(on) Ciss Ciss td(on) tr td(off) tf 5 45 22 7 1 12 2 pF pF ns ns ns ns V(BR)GSS IGSS IDSS VGS(OFF) 100 2 Min 25 Typ 40 0.1 1 900 7 Max Unit V nA mA V
ID = 1 mA, VGS = VDS = V, VGS = 10V VDS = V, VGS = 10V VDD = 1.5V, ID(ON) = 30 mA RL = 50 , VGS(ON) = V VGS(OFF) = 7V
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01/99
F-41
NJ903 Process

VGS(OFF) = 4.2 V
Typical Gate Leakage Current as a Function of Ambient Temperature

100
500 VGS = V Drain Current in mA 400 VGS = 1 V 300 VGS = 2 V 200 VGS = 3 V 100 VGS = 4 V Leakage Current in nA
IGSS @ VGS = 20 V VDS = V

10
0.1
0.01
10
15
20
25
50
75
100
125
150
Temperature in C
Drain Saturation Current as a Function of VGS(OFF) Drain Source (on) Resistance in Drain Saturation Current in mA 1000 800 600 400 200 10 8 6 4 2
RDS(ON) as a Function of VGS(OFF)
Input Capacitance as a Function of VGS 80 Input Capacitance in pF VDS = V 60 VDS = 5 V VDS = 15 V 40 Feedback Capacitance in pF 40
30
20
20
10
0 5
10
15
20
10
15
20
F-42
01/99
NJ903L Process

S-D
G D-S
Device in this Databook based on the NJ903L Process.
S-D
Datasheet
IF9030
G
D-S
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Input Capacitance Feedback Capacitance Equivalent Noise Voltage Ciss Crss eN 50 18 0.5 pF pF V(BR)GSS IGSS IDSS VGS(OFF) 5 0.1 Min 20 Typ 25 5 500 500 3 Max Unit V pA mA V
VDS = V, VGS = 10V VDS = V, VGS = 10V
f = 1 MHz f = 1 MHz f = 1 kHz
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F-43
NJ903L Process

VGS(OFF) = 2.2 V
200
150
100
0.5
1.0
1.5
2.0
Drain Saturation Current as a Function of VGS(OFF) Drain Saturation Current in mA 250 200 150 100 50 Transconductance in mS 250
200
150
50
100
150
200
Noise as a Function of Frequency 4.0 Noise Voltage in nV/Hz IDSS = 65 mA VDG = 4 V ID = 5 mA 80 Ciss
Capacitance as a Function of Vgs
Vds = 5 V
2.0
Capacitance in pF
3.0
60
40 Crss
1.0
20
10
100
1K Frequency in Hz
10K
100K
10
15
20
F-44
01/99
NJ1800D Process

Ultra Low-Noise Pre-Amplifier
Devices in this Databook based on the NJ1800D Process. Datasheet

U290, U291
S
Die Size = 0.052" X 0.052" All Bond Pads 0.004" Sq. Substrate is also Gate.
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Forward Transconductance (Pulsed) Drain Source ON Resistance Input Capacitance Feedback Capacitance gfs rds(on) Ciss Crss 2 100 50 350 7 mS pF pF V(BR)GSS IGSS IDSS VGS(OFF) 50 0.1 Min 20 Typ 30 30 100 1000 7 Max Unit V pA mA V
NJ1800D Process Test Conditions IG = 1 A, VDS = V VGS = 10V, VDS = V VDS = 10V, VGS = V VDS = 10V, ID = 1 nA
VDS = 10V, VGS = V ID = 1 mA, VGS = V VDS = 10V, VGS = V VDS = 10V, VGS = V
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F-45
NJ1800D Process

VGS(OFF) = 2.4 V
400 300 200 100
Drain Saturation Current as a Function of VGS(OFF) Drain Saturation Current in mA Drain Source on Resistance in 1000 800 600 400 200 5
RDS(ON) as a Function of VGS(OFF)
Drain Source Cutoff Voltage in Volts Typical Gate Leakage Current as a Function of Ambient Temperature
100
Input Capacitance as a Function of VGS 600 Input Capacitance in pF VDS = V
Leakage Current in nA
IGSS @ VGS = 20 V VDS = V

10
500 400 300 200 100 0
0.1
0.01
25
50
75
100
125
150
12
16
Temperature in C
F-46
01/99
NJ1800DL Process

Low-Current Low Gate Leakage Current High Input Impedance Low-Noise
10 mA +150C 65C to +175C

Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts
Device in this Databook based on the NJ1800DL Process. Datasheet

IF1801
S
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Forward Transconductance (Pulsed) Input Capacitance Feedback Capacitance Equivalent Noise Voltage gfs Ciss Crss eN 350 160 50 0.7 mS pF pF V(BR)GSS IGSS IDSS VGS(OFF) 50 0.1 Min 15 Typ 25 30 100 800 4 Max Unit V pA mA V
NJ1800DL Process Test Conditions IG = 1 A, VDS = V VGS = 10V, VDS = V VDS = 10V, VGS = V VDS = 10V, ID = 1 nA
VDS = 10V, VGS = V ID = 1 mA, VGS = V VDS = 10V, VGS = V
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F-47
NJ1800DL Process

VGS(OFF) = 2.3 V
400 300 200 100
Drain Saturation Current as a Function of VGS(OFF) Drain Saturation Current in mA 1000 800 600 400 200 Transconductance in mS 350 300 250 200 150 100 0 1 2 3 4 0
20
40
60
80
Noise as a Function of Frequency 3.0 ENoise Voltage in nV/Hz Input Capacitance in pF 2.5 2.0 1.5 1.0 0.5 10 100 1K Frequency in Hz 10K 100K IDSS = 40 mA VDG = 4 V ID = 5 mA 600 500 400 300 200 100 0
Input Capacitance as a Function of VGS VDS = V
12
16
F-48
01/99
NJ3600L Process

Large Capacitance Detector Pre-Amplifier
S-D
S-D
S-D G
Device in this Databook based on the NJ3600L Process. Datasheet

IF3601 IF3602
G D-S
D-S
D-S
At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Drain Source ON Resistance Forward Transconductance (Pulsed) Input Capacitance Feedback Capacitance Equivalent Noise Voltage rds(on) gfs Ciss Crss eN 1 750 650 80 0.35 4 mS pF pF V(BR)GSS IGSS IDSS VGS(OFF) 50 0.5 Min 15 Typ 22 100 1000 1000 3 Max Unit V pA mA V
ID = 1 mA, VGS = V VDS = 10V, VGS = V VDS = 10V, VGS = V VDS = 10V, VGS = V
f = 1 kHz f = 1 kHz f = 1 kHz f = 1 kHz f = 30 Hz
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F-49
NJ3600L Process

VGS(OFF) = 1.25 V
150
100 VDG = 10 V, ID = 20 mA 50
0.4
0.8
1.2
1.6
Drain Saturation Current as a Function of VGS(OFF) Drain Saturation Current in mA 500 400 300 200 100 Transconductance in mS 250
200
150 VDG = 10 V, Id = 20 mA 100
0.5
1.5
100
200
300
400
Noise as a Function of Frequency 0.6 Noise Voltage in nV/Hz Input Capacitance in pF VDG = 3 V ID = 5 mA 0.4 1000
Input Capacitance as a Function of VGS VDG = V 800 600 400 200
0.2
10
100
1K Frequency in Hz
10K
100K
12
16
01/99
G-1
Semiconductor Databook Section G Package Information
Page
TO-18 TO-39 TO-46 TO-52 TO-71 TO-72 TO-78 TO-99 TO-226AA (TO-92) TO-226AB (TO-92/18) TO-236AB (SOT-23) SOIC-8 TO-92 Two-Lead Package
G-2 G-2 G-3 G-3 G-4 G-4 G-5 G-5 G-6 G-6 G-7 G-7 G-8
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G-2
01/99
TO-18 Package
0.210 (5.33) 0.170 (4.32) 0.230 (5.84) 0.195 (4.95) 0.209 (5.31) 0.178 (4.52) Dia. Dia. 0.030 (0.76) Max. 0.750 (19.05) Max. 0.500 (12.70) Min
3 Leads - Dia. 0.021 (0.53) 0.016 (0.41) 2
0.100 (2.54) - Dia. Typ. 3 0.048 (1.22) 0.028 (0.71) 45 Bottom View 0.046 (1.17) 0.036 (0.91)
TO-39 Package
Alternate (Preferred) version cap height = Max 0.185 (4.70), Min 0.165 (4.19) 0.370 (9.40) 0.335 (8.51) 0.350 (8.89) 0.315 (8.00) Dia. Dia.
0.260 (6.60) 0.240 (6.10) 3 Leads - Dia. 0.021 (0.53) 0.016 (0.41) 2 1 45 Bottom View 0.210 (5.34) Dia. 0.190 (4.82) Dia. 0.050 (1.14) 0.029 (0.74) 0.034 (0.86) 0.028 (0.71)
0.125 (3.18) Max. 0.009 (0.23) Min. 0.750 (19.05) Max. 0.500 (12.70) Min
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01/99
G-3
TO-46 Package
3 Leads - Dia. 0.021 (0.53) 0.016 (0.41) 2
TO-52 Package
3 Leads - Dia. 0.019 (0.48) 0.016 (0.41) 2
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G-4
01/99
TO-71 Package
6 Leads - Dia. 0.019 (0.483) 0.016 (0.406) 3
0.100 (2.54) - Dia. Typ. 5 2 6 7 1 45 Bottom View 0.048 (1.22) 0.028 (0.71) 0.046 (1.17) 0.036 (0.91)
TO-72 Package
4 Leads - Dia. 0.021 (0.53) 0.016 (0.41) 2
0.100 (2.54) - Dia. Typ. 3 4 1 45 Bottom View 0.048 (1.22) 0.028 (0.71) 0.046 (1.17) 0.036 (0.91)
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G-5
TO-78 Package
8 Leads - Dia. 0.210 (0.54) 0.016 (0.41) 3
0.200 (5.08) - Dia. Typ. 4 2 5 6 7 1 8 45 Bottom View 0.045 (1.14) 0.029 (0.74) 0.034 (0.86) 0.028 (0.71)
TO-99 Package
0.165 (4.19) 0.185 (4.70)
0.335 (8.51) 0.370 (9.40) 0.305 (7.75) 0.335 (8.51)
0.010 (0.25) 0.040 (1.02) 8 Leads - Dia. 0.016 (0.41) 0.021 (0.53) 4 45
0.200 (5.08) Basic 5 6 7 8 3 2 1
0.029 (0.74) 0.045 (1.14)
0.010 (0.25) 0.040 (1.02) 0.500 (12.70)
Standoff 0.110 (2.79) 0.160 (4.06)
0.028 (0.71) Bottom View 0.034 (0.86)
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G-6
01/99
TO-226AA Package (TO-92)
0.210 (5.33) 0.170 (4.32) 0.205 (5.20) 0.135 (3.43) 0.175 (4.45) Min.
3 Leads 0.022 (0.55) 0.014 (0.36) 3 2 1
0.165 (4.19) 0.125 (3.18) 0.115 (2.66) 0.080 (2.04) Bottom View 0.022 (0.55) 0.014 (0.36) 0.105 (2.66) 0.095 (2.42)
Seating Plane 0.750 (19.05) Max. 0.500 (12.70) Min.
TO-226AB Package (TO-92/18)
0.210 (5.33) 0.170 (4.32) 0.205 (5.20) 0.135 (3.43) 0.175 (4.45) Min.
3 Leads 0.022 (0.55) 0.014 (0.36) 3 2 1
0.165 (4.19) 0.125 (3.18) 0.115 (2.66) 0.080 (2.04) 0.052 (1.33) 0.047 (1.21) 0.022 (0.55) 0.014 (0.36)
0.105 (2.66) 0.095 (2.42) Bottom View
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01/99
G-7
TO-236AB Package (SOT-23)
0.021 (0.54) 0.015 (0.38) 3 0.098 (2.64) 0.055 (1.40) 0.083 (2.10) 0.047 (1.20) 1 0.022 (0.55) 0.017 (0.44) 0.120 (3.05) 0.105 (2.67) 0.004 (0.10) 0.001 (0.02) 2 0.079 (2.00) 0.071 (1.80) 0.040 (1.02) 0.031 (0.79) 0.010 (0.25) 0.005 (0.13) 0.0059 (0.15) 0.0035 (0.089) 8
0.041 (1.12) 0.035 (0.89)
SOIC-8 Package
8 7 6 5 0.158 (4.01) 0.244 (6.20) 0.150 (3.81) 0.228 (5.79) 1 2 3 4
0.050 (1.27) 0.022 (0.56) 0.018 (0.046
0.018 (0.46 0.014 (0.36) 0.059 (1.50) 0.049 (1.24)
0.015 (0.37) Min. 0.069 (1.75) 0.053 (1.35)
45
0.197 (5.00) 0.188 (4.78)
0.009 (0.23) 0.007 (0.18)
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G-8
01/99
TO-92 Two-Lead Package
0.210 (5.33) 0.170 (4.32) 0.205 (5.20) 0.135 (3.43) 0.175 (4.45) Min.
2 Leads 0.022 (0.55) 0.015 (0.38) 2
0.165 (4.19) 0.125 (3.18) 0.115 (2.66) 0.080 (2.04) Bottom View 1 0.022 (0.55) 0.014 (0.36) 0.105 (2.66) 0.095 (2.42)
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01/99
H-1
Semiconductor Databook Section H Application Notes
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01/99
Junction Field Effect Transistors
InterFET Application Notes

Introduction
of the N-type bar is called the source and the other is called the drain. Current is injected into the channel from the source terminal, and collected at the drain terminal. The interface region of the P- and the N-type materials forms a P-N junction as shown in Figure 1.
he field effect transistor was actually conceived before the more familiar bipolar transistor. Due to limited technology and later the rapid rise of the bipolar device it was not pursued until the early 1960s as a viable semiconductor alternative. At this time further investigation of the field effect transistor and advances in semiconductor process technology lead to the types in use today. Field effect transistors include the Junction FET (JFET) and the MOSFET. The MOSFET is a metaloxide semiconductor technology and is sometimes referred to as the IGFET or Insulated Gate FET. All field effect transistors are majority carrier devices. This means that current is conducted by the majority carrier species present in the channel of the FET. This majority carrier consists of hole for p-channel devices and electrons for n-channel devices. The JFET operates with current flow through a controlled channel in the semiconductor material. The MOSFET creates a channel under the insulated gate region which is produced by an electric field induced in the semiconductor by applying a voltage to the gate. The JFET is a depletion mode device whereas the MOSFET can operate as a depletion mode or an enhancement mode device. Depletion mode devices are controlled by depleting the current channel of charge carriers. Enhancement mode devices are controlled by enhancing the channel with additional charge carriers.
Gate
P Layer Source N Layer P Layer Drain
Gate
Figure 1
As in any material, the resistance of the conducting channel is defined by:
(1) R = l / A
where R = total channel resistance = resistivity of the silicon l = length of the conducting path A = cross sectional area of the conducting path Figure 2 illustrates a JFET with the two gate areas electrically connected together, as are the source and the drain. Application of a reverse bias voltage on the drain/gate terminals results in the formation of depletion regions at the PN junction. Increasing the voltage causes the depletion regions to reach further into the channel and effectively reduces its cross-sectional area. It can be seen from Equation 1 that this increases the channel resistance. Continuing to increase the voltage will result in the depletion regions touching in the middle of the channel. The channel is then said to be pinched off and the voltage required to cause this is called the pinch-off voltage.
The JFET
The junction field effect transistor in its simplest form is essentially a voltage controlled resistor. The resistive element is usually a bar of silicon. For an N-channel JFET this bar is an N-type material sandwiched between two layers of P-type material. The two layers of P-type material are electrically connected together and are called the gate. One end
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H-3
Gate
Gate
P
Source
P
Drain Source
N P
Gate
Figure 2
N P
Gate
Figure 3
Drain
Connecting the gate to the source and applying a voltage between the drain and source also produces the formation of a depletion region at the PN junction. The depletion region is then concentrated at the drain end of the channel, as shown in Figure 3. Once again, increasing the voltage causes the depletion region to spread farther into the channel. This results in a corresponding increase in channel resistance due to the reduction in the cross sectional area of the channel. The voltage at which the two depletion regions just touch in the middle of the channel is called the drain saturation voltage. Operation of the JFET at voltages below and above the drain saturation voltage are referred to the linear (or resistive) and saturation regions, respectively. When operated in the saturated region, changes in voltage cause little change in channel net current. The amount of current which will flow in the channel of a JFET operating in this manner is called the drain saturation current. The JFET is normally operated in the saturated region when used as an amplifier.
The application of an additional voltage between the gate and the source in reverse bias condition causes the depletion region to become more evenly distributed throughout the channel. This further increases the channel resistance and reduces the amount of channel current with a given drain voltage. Continuing to increase the gate voltage to the pinchoff point will reduce the drain current to a very low value, effectively zero. This illustrates the operation of the JFET by showing that a voltage modulation of the gate results in a corresponding drain current modulation. A typical set of JFET characteristic curves is shown in Figure 4. The three primary regions shown on the graph are the linear region, the saturated region, and the breakdown region. The linear region is that region where the drain to source voltage is less than the drain saturation voltage. It can be seen that the voltage current relationship is a linear function. At the point where the drain to source voltage reaches the drain saturation voltage, the saturated region begins. The curves illustrate that increasing the gate reverse voltage reduces the drain current as well as the drain saturation voltage. This also shows the manner in which the drain current is modulated when modulating the gate voltage. The final region of interest is the breakdown region. This is the point at which
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01/99

the gate to drain reverse biased depletion region breaks down due to the voltage applied and the current is no longer blocked. When operated in this manner the current flow is essentially uncontrolled and the device could be damaged and destroyed.
Conclusions
The previous discussion of the JFET illustrates that: 1. The JFET is basically a voltage controlled resistor, 2. The JFET operates as a depletion mode device, and, 3. The JFET performs as a voltage controlled current amplifier.
Drain Current (Id)
The JFET is preferred in many circuit applications due to its high input impedance because it is a reverse biased PN junction. Its operation is that of the flow of majority carriers only and therefore acts as a resistive switch. It also is inherently less noisy than bipolar devices and can be used in low signal level applications.
Drain to Source Voltage (Vds) Figure 4 A typical set of JFET characteristic curves.
References:
1. Millman, J. and Halkias, C.: Integrated Electronics Analog and Digital Circuits and Systems, McGraw-Hill Book Company, New York, 1972 2. Sevin, L.J.: Field Effect Transistors, McGraw Hill Book Co., New York, 1965 3. Grove, A.S.: Physics and Technology of Semiconductor Devices, John Wiley And Son, New York, 1967 4. Grebene, A.B.: Analog Integrated Circuit Design, Van Nostrand Reinhold, New York, 1972 5. Pierce, J.F. and Paulus, T.: Applied Electronics, Charles E. Merrill, Columbus, Ohio, 1972
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01/99
H-5
Typical JFET Applications

Introduction
he Junction Field Effect Transistor (JFET) exhibits characteristics which often make it more suited to a particular application than the bipolar transistor. Some of these applications are:
High Input Impedance Amplifier Low-Noise Amplifier Differential Amplifier Constant Current Source Analog Switch or Gate Voltage Controlled Resistor
The most common configuration for the JFET as an amplifier is the common source circuit. For an N-channel device the circuit would be biased as shown in Figure 2 VDD RD Vo VSS
Figure 2 Basic Common Source Amplifier Circuit Biasing Configuration
In this application note, these applications, along with a few others, will be discussed. Only the basics will be shown without going into too much technical detail.
Vi
Basic JFET Amplifier Configurations

There are three basic JFET circuits: the common source, the common gate, and the common drain as shown in Figure 1. Each circuit configuration describes a two port network having an input and an output. The transfer function of each is also determined by the input and output voltages or currents of the circuit.
Common Source
Vi
G D S
Vo
Since the N-Channel JFET is a depletion mode device and is normally on, a gate voltage which has a negative polarity with respect to the source is required to modulate or control the drain current. This negative voltage can be provided by a single positive power supply using the self biasing method shown in Figure 3. This is accomplished by the voltage which is dropped across the source resistor, Rs, according to the current flowing through it. The gate-to-source voltage is then defined as:
Common Gate
S Vi
D G Vo
(1) VGS = ID x RS
Common Drain
Vi
Figure 1
G S D
Vo
Basic JFET Amplifier Circuit Configurations
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01/99

The effect of the source resistor on the gain of the circuit can be removed at higher frequencies by connecting a capacitor across the source resistor. This then results in an amplifier which has a gain of: ID Vi RS VSS
Figure 3 Common Source Amplifier Using VGS Self-Biasing Method
VDD RD
(3) AV = gm x Zl
but only at frequencies above that defined by the resistor-capacitor network in the source circuit. This frequency is defined as:
Vo
(4) flo = 1 / (2 x RS x CS )
where flo = the low frequency corner = the constant 3.1418 RS = the value of the source resistor in ohms CS = the value of the source capacitor in farads This circuit also has a high input impedance, generally equal to the value of the input impedance of the JFET.
The circuit of Figure 3 also defines a basic single stage JFET amplifier. The source resistor value is determined by selecting the bias point for the circuit from the characteristic curves of the JFET being used. The value of the drain resistor is then chosen from the required gain of the amplifier and the value of the drain current which was previously selected in determining the gate voltage. The value of this resistor must also allow the circuit to have sufficient dynamic range, or voltage swing, required by the following stage. The following stage could be anything from another identical circuit to a loud speaker for an audio system. The voltage gain of this circuit is then defined as:
A Low-Noise Amplifier
A minor change to the circuit of Figure 3 describes a basic single stage low-noise JFET amplifier. Figure 4 shows that this change only incorporates a resistor from the gate to Vss. This resistor supplies a path for the gate leakage current in an AC coupled circuit. Its value is chosen by the required input impedance of the amplifier and its desired low-noise characteristics. The noise components of this amplifier are the thermal noise of the drain and gate resistors plus the noise components of the JFET. The noise contribution of the JFET is from the shot noise of the gate leakage current, the thermal noise of the channel resistance, and the frequency noise of the channel. These noise characteristics are generally lower than those found in bipolar transistors if the JFET is properly selected for the application. The voltage gain of the circuit is again defined by Equation (3).
(2) AV = (gm x Zl ) / (1 + gm x RS)

where AV = the voltage gain gm = the forward transconductance or gain of the JFET Zl = the equivalent load impedance RS = the value of the source resistor
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This circuit configuration is very useful as a high input impedance stage to be connected to the input of a low cost operational amplifier, such as the popular 741 Op-Amp VDD Vo Vi RG RS VSS
Figure 4 Low-Noise JFET Single Stage Amplifier with Source By-Pass Capacitor, CS
VDD RD
RD
RD Vo
CS Vi
+ Vi
RS VSS
Figure 5 The Matched Pair JFET Differential Amplifier
The JFET Differential Amplifier

Another application of the JFET is the differential amplifier. This configuration is shown in Figure 5. The differential amplifier requires that the two transistors be closely matched electrically and physically located near each other for thermal stability. Either input and either output can be used or both inputs and only one output and conversely only one input and both outputs can be used. For the configuration shown the source resistor is chosen to determine the gate to source bias voltage, remembering that the current will be twice that of each of the JFET drain currents. The value of the drain resistors is chosen to provide a suitable dynamic range at the output. The gain of this circuit is defined by:
The JFET Constant Current Source

A constant current source using a JFET is shown in Figure 6. This circuit configuration has many useful applications ranging from charging circuits for integrators or timers to replacing the source resistor in the differential amplifier shown in Figure 5. The current provided by the constant current source of Figure 6 is defined as
(6) ID = IDSS [ 1 - ( VGS / Vp ) ] 2

where ID = the drain current or magnitude of current sourced
(5) AV = 2x (gm x Rl ) / (1 + gm x RS )
where all the terms in the equation have previously been defined.
IDSS = the drain saturation current of the JFET VGS = ID x RS Vp 2 = the JFET pinch-off voltage = the squared value of the term in brackets.
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It can be readily seen that the use of this circuit in the source circuit of the differential amplifier of Figure 5 would improve the circuit voltage gain as well as reduce the amplifier noise and enhance the CMRR of the amplifier. ID
(7) Vo / Vi = 1 / [(1 / R1 ) + (1 / R2 ) + .... + (1 / Rn ) ] / Ri

where R1 through R n = the feedback resistors Ri = the input resistors Vo = the output voltage Vi = the input voltage Note that only those feedback resistors which are switched into the circuit are to be included in the the transfer function equation. C1 C2 Cn
D S RS
VSS
Figure 6 JFET Constant Current Source
R1 R2 R3 Vo
The JFET Analog Switch

Figures 7, 8, and 9 show three different applications for the JFET to be used as an analog switch or gate. Figures 7 and 8 both demonstrate methods for realizing programmable gain amplifiers, while Figure 9 shows an analog multiplexer circuit using JFETs and a common op-amp integrated circuit. It can be seen from Figure 7 that the gain of the stage can be changed by switching in any combination of feedback resistors R1 through Rn. The JFET in series with the input resistor should be of the same type as those in the feedback paths and is used for thermal stability of the circuit gain. The transfer function of the circuit of Figure 7 is approximated by: Vi Rl
Figure 7 Programmable Gain Amplifier
The circuit of Figure 8 shows another method to realize a programmable gain amplifier using a common op-amp, four resistors, and only two JFETs. The gain of this circuit can also be changed by switching in the desired resistors by turning off the appropriate JFET thus switching in the parallel resistor. The transfer function of this circuit is approximated by:
(8) Vo / Vi = (R3 + R4 ) / (R1 + R2 )
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G1 G2 Vi R1 R2 R3 + R4 Vo V2 R1 G2 VN GN
Figure 8 Programmable Gain Amplifier with 4 Resistors and 2 JFETs
Rf R1 V1 R1 G1 +
It should be noted that only those resistors which are switched into the circuit are to be included in the transfer function equation. Figure 9 shows a circuit in which the JFETs are acting as analog switches to multiplex several input signal sources to a single output source. The transfer function of this circuit is then approximated by:
Figure 9 Analog Multiplexer Circuit which can also be used as a Programmable Summing Amplifier
The JFET Voltage Controlled Resistor

Another common application for the JFET is as a voltage controlled resistor. The JFET action in normal operation simply changes the cross sectional dimensions of the channel. When the JFET is biased in the resistive or linear region as shown in Figure 10, a change in gate voltage and the corresponding change in channel dimensions simply changes the drain to source resistance of the device.
(9) Vo / Vi = Rf / Rn
where Rf = the feedback resistor Rn = any one of the input resistors Further examination of this circuit shows that it can also be used as a programmable summing amplifier by switching in any combination of input signals. The transfer function is then approximated by:
(10) Vo / Vi = (Rf / R1 ) + (Rf / R2 ) + .... + (Rf / Rn )

Again in this application only those resistors which are switched into the circuit are to be included in the transfer function equation.
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Figure 11 depicts a JFET being used as a voltage controlled resistor (VCR). The resistance is determined from the bias point conditions selected from the curves of Figure 10. The resistance is then defined as VGS4 VGS5 VDS
ID VGS1 VGS2 VGS3
(11) RDS = VDS / IDS

where RDS = the drain to source resistance VDS = Vo or the output voltage IDS = the drain current It can readily be seen from the curves of Figure 10 that any change in the input voltage (Vi) or the gate to source voltage will cause a corresponding change in the drain current. Equation (11) indicates that there is a corresponding change in the drain to source resistance (RDS). Therefore, the resistance is controlled by the voltage applied to the gate, resulting in a voltage controlled resistor.
Resistive Region
Saturation Region
VGS1 VGS2 VGS3 VGS4 VGS5
ID
D S
ID
Vo
VDS
Figure 11 JFET used as a Voltage Controlled Resistor, where RDS = V / ID o
Conclusions
Figure 10 JFET Family of Characteristic Curves of ID vs. VDS and V GS
This application note describes several useful junction field effect transistor circuit configurations. The high input impedance and low-noise circuits are often used as input stages to voltage measurement instruments such as oscilloscopes and digital volt meters.
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The differential amplifier is a very widely used circuit in applications where the difference between two voltages is to be measured, such as the input stage of an operational amplifier. The use of JFETs in this application provides high input impedance and low input leakage current. Constant current sources have many uses such as setting bias conditions for many other circuits in a system and as charging circuits for integrators and timing circuits. The analog switch is most often used in an analog multiplexer and in sample and hold circuits. Voltage controlled resistors are normally found in automatic gain control circuits and voltage controlled tuning circuits. Therefore it is clearly seen that many applications for Junction Field Effect Transistors exist. Those discussed in this application note have many variations, refinements, and other uses. It should be noted that these applications were described in the simplest detail and additional study of the particular application should be considered before using any of the circuits presented.
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JFET Parameter Geometry Relationships
Length of Channel
el ann f Ch in 1 th o te Dra rce id Ga ou W S
EPI Thickness
Depth of Channel Gate 2
Increasing Dimension will (Inc)rease, (Dec)rease, or have Effect
Channel Length
Channel Width
Channel Depth
EPI Thickness
EPI Resistivity
Breakdown Voltage Transconductance Max Drain Current Pinch Off Voltage ON Resistance Input Capacitance Gate Leakage Short Circuit Input Noises Input Current Noise
BVGSS Gm Idss Vp rds Ciss Igss eN In
Dec Dec Dec Inc Inc Inc Inc Inc
Inc Inc Dec Inc Inc Dec Inc
Inc Inc Inc Dec Dec
Inc Dec Dec Inc Inc Inc
Inc Dec Dec Inc Dec Inc Inc
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Titles of Device Application Papers
Abstracts and complete text available from InterFET upon request

JFET for Completely Depleted High Resistivity Silicon
V. Radeka, P. Rehak, S. Rescia (Brookhaven National Laboratory), E Gatti, A. Longoni, M. Sampietro & G. Bertuccio (Politecnico di Milano), P. Holl, L. Struder (Max-Planck-Institut), J. Kemmer (Tu Munchen, 8048 Garching and MBB GmbH)
Monolithic JFET Preamplifier for Ionization Chamber Calorimeters

Larry A. Rehn, Dan E. Roberts (InterFET Corporation)
Monolithic JFET Charge Preamplifier for Calorimetry at High Luminosity Hadron Colliders
Veljko Radeka, Sergio Rescia (Brookhaven (National Laboratory), Larry A. Rehn (InterFET Corporation), P.F. Manfredi, V. Speziali (Universita di Pavia, Dipartimento di Elettronica)
Circuit Design of Battery Operated Nuclear Radiation Measuring Instruments

J. H. Howes (Harwell Laboratory, England)
An Improved Operating Mode for a Si(Li) X-Ray Spectrometer

N. W. Madden, F. S. Goulding, J. M. Jaklevic, D. A. Landis, C. S. Rossington, J. T. Walton (Lawrence Berkeley Laboratory)
Limitations in the Accuracy of Detector Charge Measurements Set By the 1/f Noise In the Front End Amplifier
G. Lutz (Max Planck Institut fur Physik und Astrophysik), P. F. Manfredi, V. Re, V. Speziali (Universita di Pavia, Dipartimento di Elettronica)
Methods of Reducing Noise of Junction Field Effect Transistor (JFET) Amplifiers

H. E. Kern, J. M. McKenzie (Bell Telephone Laboratories, Inc.)
Integrated FET and Charge Reset Device for Gamma Spectrometers

T. Nashashibi (Link Analytical ), P. Sangsingkeow (Tennelec-Nucleus, Inc.)
Improved Process for Manufacture of Radiation Hard N-Channel JFETs for Detector Electronics
Larry A. Rehn, Dan E. Roberts (InterFET Corporation)
A Study of Low-Noise JFETs Exposed to Large Doses of Gamma Rays and Neutrons
Mauro Citterio, Sergio Rescia, Veljko Radeka (Brookhaven National Laboratory)
JFET Monolithic Preamplifier With Outstanding Noise Behaviour and Radiation Hardness Characteristics
Veljko Radeka & Sergio Rescia (Brookhaven National Laboratory), P.F. Manfredi, V. Speziali, F. Svelto (Universita di Pavia, Dipartimento di Elettronica)
RAD-Hard Electronics Development Program for SSC Liquid-Argon Calorimeters

A. Stevens and J. Dawson (Argonne National Laboratory), H. Kraner, V. Radeka, & S. Rescia (Brookhaven National Laboratory)
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Titles of Device Application Papers
Abstracts and complete text available from InterFET upon request

Radiation Effects on JFETs, Mosfets, and Bipolar Transistors, as Related to SSC Circuit Design
E. J. Kennedy, B. Gray & A. Wu (The University of Tennessee), G. T. Alley & C. L. Britton, Jr. (Oak Ridge National Laboratory), P. L. Skubic (The University of Oklahoma)
Effects of Scintillation Light Collection on the Time Resolution of a Time-of-Flight Detector for Annihilation Quanta
Sibylle I. Ziegler, Hermann Ostertag, Wolfgang K. Kuebler, Walter J. Lorenz Deutsches Krebsforschungszentrum, Heidelberg and Ernst W. Otten Universitat Mainz
Perspectives in the Design of Transformerless, Low-Noise Front-end Electronics for Large Capacitance Detectors & Calorimeters in Elementary Particle Physics
M. Bertolaccini, G. Padovini (Politecnico di Milano) D.V. Camin (INFN), P. F. Manfredi (Universita di Pavia), J. A. Preston (University of the West Indies), Larry A. Rehn (InterFET Corporation)
Performance of a Coincidence Based Blood Activity Monitor

William W. Moses Lawrence Berkeley Laboratory
Transistor Reset Preamplifier for High Rate High Resolution Spectroscopy

D.A. Landis, C,P. Cork, N.W. Madden, F.S. Goulding (Lawrence Berkeley Laboratory)
Transient Radiation Response of JFETs and MOSFETs At Cryogenic Temperatures

D. M. Long (General Electric Company)
Transmission Line Connections Between Detector & Front End Electronics in Liquid Argon Calorimetry
R.L. Chase, C. de La Taille, S. Rescia & N. Seguin (Laboratoire de lAccelerateur Liniaire, France & Brookhaven National Laboratory)
Low-Temperature Electronics for Cryogenic Instrumentation

Randall K. Kirschman (University of Southhampton)
Performance of a 60 gram Cryogenic Germanium Detector

A. Cummings, N .Wang, T. Shutt, P. Barnes, A. Lange, B. Sadoulet, C. Stubbs (Center for Particle Astrophysics), J. Emes, E.E. Haller, J. Rich, R. Ross, G. Smith (Lawrence Berkeley Laboratory), Y. Giraud-Heraudt (College de France)
Transistor Noise Characteristics for LowFrequency Analog Cryogenic Instrumentation

Randall K. Kirschman
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What is InterFET and what is their focus?

What is InterFET and what is their focus?

What are InterFET's terms and conditions for ordering?

What are InterFET's terms and conditions for ordering?

Semiconductor Databook

High-Reliability Process Flows

Option 1 Process Flow Evaluation for High-Reliability Un-Encapsulated JFET Die

Option 2 Process Flow for High-Reliability Metal Case JFETs

750-2006 750-1071 750-1071

Option 3 Process Flow for Class S High-Reliability Metal Case JFETs

JFET and IC Research

Monolithic JFET Preamplifier

Absolute maximum ratings at TA = 25C

At this time, there are two units in this family.

Charge Sensitive Preamplifier Specifications

Open Drain Output Open Source Output

Equivalent Noise Charge

Packages & Test Circuit Overside

Monolithic JFET Preamplifier

Substrate Open Drain Output Open Source Output

Test Circuit Reference

0.029 (0.74) 0.045 (1.14) 0.200 (5.08) Basic 5 4 45 3 2 1 6 7

0.018 (0.46 0.014 (0.36) 0.049 (1.24) 0.059 (1.50)

0.015 (0.37) Min. 0.069 (1.75) 0.053 (1.35)

0.010 (0.25) 0.040 (1.02) 0.500 (12.70)

Standoff 0.110 (2.79) 0.160 (4.06)

0.028 (0.71) Bottom View 0.034 (0.86)

0.197 (5.00) 0.188 (4.78)

0.009 (0.23) 0.007 (0.18)

IFPA300 uses TO-99 Package

IFPA301 uses SOIC-8 Package

InterFET Scientific R&D

InterFET Scientific R&D

Semiconductor Databook Section A Naming Convention Selection Guide By Application

Semiconductor Naming Convention

JFETs, Diodes, Regulators & VCRs

Semiconductor Selection Guide by Application

JFETs, Diodes, Regulators & VCRs

Semiconductor Selection Guide by Application

JFETs, Diodes, Regulators & VCRs

Current Limiting & Regulators

Semiconductor Selection Guide by Application

JFETs, Diodes, Regulators & VCRs

B-10 B-10 B-10 B-14 B-20 B-22 B-60 B-69

Semiconductor Selection Guide by Application

JFETs, Diodes, Regulators & VCRs

Semiconductor Selection Guide by Application

JFETs, Diodes, Regulators & VCRs

Semiconductor Databook Section B JFET Data Sheets

Data Sheet Index

Silicon Junction Field-Effect Transistors

N-Channel Silicon Junction Field-Effect Transistor

2N3821 Min 50 0.1 0.1 0.5 2 Max

2N3822 Min 50 0.1 0.1 1 4 6 2 10 Max Unit V nA A V V V V mA nA A

VGS VGS(OFF) IDSS ID(OFF) 0.5 4 2.5

f = 1 kHz f = 1 kHz f = 100 MHz f = 1 kHz f = 1 MHz f = 1 MHz f = 10 Hz f = 10 Hz

N-Channel Silicon Junction Field-Effect Transistor

2N3823 Min 30 0.5 0.5 1 4 7.5 8 20 Max

2N3824 Min 50 0.1 0.1 Max Unit V nA A V V mA 0.1 0.1 nA A

250 3500 6500 3200 35 6 2 200 6 6 3