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    CMOS Fabrication Steps - Best VLSI Training - VLSI FOR ALL-5

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    ESWAR TERLI
    The document describes the 20 step process for fabricating a CMOS chip using a P-substrate. Key steps include: 1) Starting with a P-substrate and growing oxide layers. 2) Creating an N-well for the NMOS transistor using photolithography and ion implantation. 3) Forming the gate oxide and terminals for the NMOS and PMOS transistors. 4) Completing the process with metallization, patterning of connections, and assigning terminal names.

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    CMOS Fabrication Steps - Best VLSI Training - VLSI FOR ALL-5

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    ESWAR TERLI
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    The document describes the 20 step process for fabricating a CMOS chip using a P-substrate. Key steps include: 1) Starting with a P-substrate and growing oxide layers. 2) Creating an N-well for the NMOS transistor using photolithography and ion implantation. 3) Forming the gate oxide and terminals for the NMOS and PMOS transistors. 4) Completing the process with metallization, patterning of connections, and assigning terminal names.

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    CMOS Fabrication Steps _ Best VLSI Training - VLSI FOR ALL-5

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    The document describes the 20 step process for fabricating a CMOS chip using a P-substrate. Key steps include: 1) Starting with a P-substrate and growing oxide layers. 2) Creating an N-well for the NMOS transistor using photolithography and ion implantation. 3) Forming the gate oxide and terminals for the NMOS and PMOS transistors. 4) Completing the process with metallization, patterning of connections, and assigning terminal names.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    50 views5 pages

    CMOS Fabrication Steps - Best VLSI Training - VLSI FOR ALL-5

    Uploaded by

    ESWAR TERLI
    The document describes the 20 step process for fabricating a CMOS chip using a P-substrate. Key steps include: 1) Starting with a P-substrate and growing oxide layers. 2) Creating an N-well for the NMOS transistor using photolithography and ion implantation. 3) Forming the gate oxide and terminals for the NMOS and PMOS transistors. 4) Completing the process with metallization, patterning of connections, and assigning terminal names.

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    of 5

    VLSI FOR ALL 1

    CMOS FABRICATION

    The CMOS can be fabricated using different processes such as:

     N-well process for CMOS fabrication


     P-well process
     Twin tub-CMOS-fabrication process

    The fabrication of CMOS can be done by following the below shown twenty steps, by
    which CMOS can be obtained by integrating both the NMOS and PMOS transistors on
    the same chip substrate. For integrating these NMOS and PMOS devices on the same
    chip, special regions called as wells or tubs are required in which semiconductor type
    and substrate type are opposite to each other.

    A P-well has to be created on a N-substrate or N-well has to be created on a P-


    substrate. In this article, the fabrication of CMOS is described using the P-substrate, in
    which the NMOS transistor is fabricated on a P-type substrate and the PMOS transistor
    is fabricated in N-well.

    The fabrication process involves twenty steps, which are as follows:

    Step1: Substrate

    Primarily, start the process with a P-substrate.

    Step2: Oxidation

    The oxidation process is done by using high-purity oxygen and hydrogen, which are
    exposed in an oxidation furnace approximately at 1000 degree centigrade.

    Step3: Photoresist

    A light-sensitive polymer that softens whenever exposed to light is called as Photoresist


    layer. It is formed.
    2

    Step4: Masking

    The photoresist is exposed to UV rays through the N-well mask

    Step5: Photoresist removal

    A part of the photoresist layer is removed by treating the wafer with the basic or acidic

    solution.

    Step6: Removal of SiO2 using acid etching

    The SiO2 oxidation layer is removed through the open area made by the removal of
    photoresist using hydrofluoric acid.

    Step7: Removal of photoresist

    The entire photoresist layer is stripped off, as shown in the below figure.

    Step8: Formation of the N-well

    By using ion implantation or diffusion process N-well is formed.


    3

    Step9: Removal of SiO2

    Using the hydrofluoric acid, the remaining SiO2 is removed.

    Step10: Deposition of polysilicon

    Chemical Vapor Deposition (CVD) process is used to deposit a very thin layer of gate
    oxide.

    Step11: Removing the layer barring a small area for the Gates

    Except the two small regions required for forming the Gates of NMOS and PMOS, the
    remaining layer is stripped off.

    Step12: Oxidation process

    Next, an oxidation layer is formed on this layer with two small regions for the formation
    of the gate terminals of NMOS and PMOS.

    Step13: Masking and N-diffusion

    By using the masking process small gaps are made for the purpose of N-diffusion.
    4

    The n-type (n+) dopants are diffused or ion implanted, and the three n+ are formed for
    the formation of the terminals of NMOS.

    Step14: Oxide stripping

    The remaining oxidation layer is stripped off.

    Step15: P-diffusion

    Similar to the above N-diffusion process, the P-diffusion regions are diffused to form
    the terminals of the PMOS.

    Step16: Thick field oxide

    A thick-field oxide is formed in all regions except the terminals of the PMOS and
    NMOS.

    Step17: Metallization

    Aluminum is sputtered on the whole wafer.

    Step18: Removal of excess metal

    The excess metal is removed from the wafer layer.

    www.vlsiforall.com
    5

    Step19: Terminals

    The terminals of the PMOS and NMOS are made from respective gaps.

    Step20: Assigning the names of the terminals of the NMOS and PMOS

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