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Exp 03

The document describes an experiment to determine the common base (CB) characteristics of an N-P-N transistor. The objectives are to measure the input characteristics by varying the base-emitter voltage VBE and measuring the corresponding emitter current IE, and to measure the output characteristics by varying the collector-base voltage VCB and measuring the collector current IC. The procedures describe setting up the transistor in a CB configuration, applying varying voltages to the base and collector terminals, and recording the corresponding currents to generate plots of the input and output characteristics from which various regions of operation can be identified.

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Captain Jack Sparrow
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57 views3 pages

Exp 03

The document describes an experiment to determine the common base (CB) characteristics of an N-P-N transistor. The objectives are to measure the input characteristics by varying the base-emitter voltage VBE and measuring the corresponding emitter current IE, and to measure the output characteristics by varying the collector-base voltage VCB and measuring the collector current IC. The procedures describe setting up the transistor in a CB configuration, applying varying voltages to the base and collector terminals, and recording the corresponding currents to generate plots of the input and output characteristics from which various regions of operation can be identified.

Uploaded by

Captain Jack Sparrow
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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MILITARY INSTITUTE OF SCIENCE AND TECHNOLOGY

Department of Aeronautical Engineering


COURSE NO.: AEAV 204 (Fundamentals of Electronics Sessional)
EXPT. NO.-03

NAME OF THE EXPERIMENT: STUDY OF N-P-N CB (Common Base)


TRANSISTOR CHARACTERISTICS.

OBJECTIVE: To determine the CB characteristics of a transistor.

MATERIALS REQUIRED
N-P-N Transistor (C829 or C828) one piece
Resistors 470,100 one piece each
Multimeter one pieces
Bread board one pieces
Dc power supply two pieces
Connecting wire as reqr

THEORY
Transistor has two p-n junctions (see figure below). One junction is called emitter junction and
other is called collector junction. When transistor is used as an amplifier, it is operated in active
mode. In active mode, emitter junction is forward biased and collector junction is reverse biased.

JnE JnC

p nC
JpE nE

iC
E
n p n
iE
C

iB

Fig. 1 Schematic diagram of N-P-N transistor

Emitter current is given by


IE = InE + IpE
We can also write
IE = IC + IB = [(1 + )/]IC
Where  = IC /IB is called common emitter current gain.

In good transistor IC>>IB i.e. >>1.

IC can also be expressed as IC =  IE. Where  = /(1+) .  is called common base current gain.

For good transistor,  is close to unity.

Proper dc biasing of a transistor is a prerequisite for proper operation as an amplifier. The


purpose of the biasing is to fix the IC (dc) and VCE (dc). But IC is a function of temperature, VBE
and. It is always desirable to design a biasing circuit where IC is insensitive to change in .

When E-B junction is forward biased and C-B junction is reverse biased, the transistor operates
in active mode. For saturation mode of operation, both junctions are forward-biased. Cut-off
region operation requires that both E-B and C-B junctions be reverse biased. The inverted active
operation occurs when E-b is reverse-biased and C-B is forward biased.

1
Fig. 2 Input and Output characteristics of Common- Base Transistor

CIRCUIT DIAGRAMS :

IE IC

100 Ω 470 Ω

VEE (0-5)
VCC (0-20)

Fig. 3 Circuit Diagram of Common- Base Transistor

In the experiment we will be using C829 or C828 transistor which is a N-P-N transistor.

Fig. 4 Pin diagram of C828 N-P-N transistor

2
PROCEDURE

For Input Characteristics of CB:


For CB Configuration refer to Fig. 1(a)
Construct the circuit shown in Fig. 1(a)
Set VCC to 10V. Change VEE such as 0.1,0.2,………up to 0.7 and then 1,2,3 so on and Measure
the value of VBE & IE Until the IE will be saturated.

VEE VBE VR IE VCC


0.1V
0.3V
0.5V
0.7V
1V 10V
2V
3V
4V
5V

Now, set VCC to 5V. Change VEE in former manner and Measure the value of VBE & IE Until the
IE will be saturated.

For Output Characteristics of CB:


Set VEE to 1V. Change VCC and Measure the value of VCB & IC Until the IC will be saturated or
constant.

VCC VCB VR IC VEE


0.1V
0.3V
0.5V
0.7V
1V
2V 1V
3V
4V
5V
7V
9V

Now, set VEE to 3V. Change VCC in former manner and Measure the value of VCB & IC Until IC
will be saturated or constant.

REPORT

1. (a) Plot output and input characteristics of the n-p-n CB transistors.

(b) Indicate active, linear/saturation and cut-off regions of the characteristics.

2. Plot (=Ic/IB) as a function of IC for VCB = 7.5V.

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