GOFORD 2312

Description D
The 2312 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
G
voltages as low as 2.5V. This device is suitable for use as a
battery protection or in other switching application.
S

General Features Schematic diagram

● VDS = 20V,ID = 6.8A
RDS(ON)=18mΩ (TYP) @ VGS=2.5V
RDS(ON)=15mΩ (TYP) @ VGS=4.5V
● High power and current handing capability
● Lead free product is acquired
● Surface mount package Marking and pin assignment

Application
●Battery protection
●Load switch
●Power management SOT-23 top view

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS ±10 V
TA =25℃ 6.8
Continuous Drain Current ID A
TA =70℃ 5.4
Drain Current-Pulsed (Note 1) IDM 20 A
Maximum Power Dissipation PD 1.25 W
Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃

Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 100 ℃/W

Electrical Characteristics (TA=25℃unless otherwise noted)

Parameter Symbol Condition Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 20 22 - V

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GOFORD 2312

Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V - - 0.3 μA

Gate-Body Leakage Current IGSS VGS=±10V,VDS=0V - - ±100 nA
On Characteristics (Note 3)
Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 0.5 0.65 0.9 V
VGS=2.5V, ID=4.0 A - 18 30 mΩ
Drain-Source On-State Resistance RDS(ON)
VGS=4.5V, ID=4.5A - 15 21 mΩ
Forward Transconductance gFS VDS=10V,ID=4A - 10 - S
Dynamic Characteristics (Note4)
Input Capacitance Clss - 500 - PF
VDS=8V,VGS=0V,
Output Capacitance Coss - 300 - PF
F=1.0MHz
Reverse Transfer Capacitance Crss - 140 - PF
Switching Characteristics (Note 4)
Turn-on Delay Time td(on) - 20 40 nS
Turn-on Rise Time tr VDD=10V,ID=1A - 18 40 nS
Turn-Off Delay Time td(off) VGS=4.5V,RGEN=6Ω - 60 108 nS
Turn-Off Fall Time tf - 28 56 nS
Total Gate Charge Qg - 10 15 nC
Gate-Source Charge Qgs VDS=10V,ID=3A,VGS=4.5V - 2.3 - nC
Gate-Drain Charge Qgd - 2.9 - nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3) VSD VGS=0V,IS=1A - - 1.2 V
Diode Forward Current (Note 2) IS - - 1 A

Notes:
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. Surface mounted on FR4 Board, t ≤ 10 sec.
3. Pulse test: pulse width ≤ 300μs, duty cycle ≤ 2%.
4. Guaranteed by design, not subject to production

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 GOFORD 2312

Typical Electrical and Thermal Characteristics

Vdd ton toff
tr tf
td(on) td(off)
Rl
Vin
D Vout 90% 90%
Vgs Rgen VOUT INVERTED
G 10% 10%

90%
S VIN 50% 50%

10%
PULSE WIDTH

Figure 1:Switching Test Circuit Figure 2:Switching Waveforms

ID- Drain Current (A）

PD Power(W)

TJ-Junction Temperature(℃) TJ-Junction Temperature(℃)

Figure 3 Power Dissipation Figure 4 Drain Current
Rdson On-Resistance(mΩ)
ID- Drain Current (A)

Vds Drain-Source Voltage (V) ID- Drain Current (A)

Figure 5 Output CHARACTERISTICS Figure 6 Drain-Source On-Resistance

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 GOFORD 2312

Normalized On-Resistance
ID- Drain Current (A)

Vgs Gate-Source Voltage (V) TJ-Junction Temperature(℃)

Figure 7 Transfer Characteristics Figure 8 Drain-Source On-Resistance
Rdson On-Resistance(mΩ)

C Capacitance (pF)

Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V)

Figure 9 Rdson vs Vgs Figure 10 Capacitance vs Vds
Is- Reverse Drain Current (A)
Vgs Gate-Source Voltage (V)

Qg Gate Charge (nC) Vsd Source-Drain Voltage (V)

Figure 11 Gate Charge Figure 12 Source- Drain Diode Forward

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GOFORD 2312

ID- Drain Current (A)

Vds Drain-Source Voltage (V)

Figure 13 Safe Operation Area
Transient Thermal Impedance
r(t),Normalized Effective

Square Wave Pluse Duration(sec)

Figure 14 Normalized Maximum Transient Thermal Impedance

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