Recent Perspectives in the Synthesis, Properties, and Applications of Thin Conducting SnO2 films

Section A-Research paper

Recent Perspectives in the Synthesis, Properties, and Applications of

Thin Conducting SnO2 films
Divya Mohan R *, Ajmal Sha1, R Gayathri1,Tevin Terence1, Arif Nazeer1and Anusha
1

Das
1
Department of Chemistry, Amrita Vishwa Vidyapeetham, Amritapuri, India
*[email protected]

Keywords:Tin oxide thin films; CVD; spray pyrolysis; Sol-gel method

Abstract.Tin oxide is one of the most extensively exploited metal oxides. Tin oxide thin film is one
of the widely studied metal oxide thin film materials, thanks to its commendable optoelectronic
properties. Varied techniques, including sol-gel dip-coating, spray pyrolysis, and chemical vapor
deposition, have been used for obtaining tin oxide thin films. SnO2 has already achieved some
niches in the marketplace; it is used as a coating on the glass that is now being most widely utilized
to impart structural rigidity to the surface of bottles and as a functional coating to decorate. The
doping with antimony and indium is also frequent in these thin films that enhance their properties,
due to which they can be used as semiconductors. These semiconductors are mechanically hard,
chemically inert, and high transparency of oxide combined with good environmental stability and
high resistance to temperature have opened up numerous applications.
This review aims to throw light on the current situation of SnO2 conducting thin films giving
particular emphasis on antimony doped thin films and a concise idea of how these are synthesized
from their precursors using techniques that involve chemical vapor deposition(CVD), spray
pyrolysis, sol-gel dip-coating (SGDC) methods and about their properties which are studied using
various characterization techniques that include X-Ray photoelectron spectroscopy(XPS) and
secondary ion mass spectrometry(SIMS) and very importantly their applications. This work also
consists of the comparison made between the above-stated synthesis methods.

Introduction
Tin oxide is one of the most widely studied metal oxides. They have been of high utility due to
their various properties. It has been used for years as a ceramic glaze, and some of its recent
applications include being used as a catalyst and thin conducting films, and many more. Usually, a
thin film is a layer of material (ranging from a smaller fraction of nanometres to various
micrometers) in terms of thickness. The primary step in many of the applications includes the
controlled development of thin films (a process referred to as deposition). During the 20th century,
a betterment in thin-film development techniques has enabled a broad range of technological
breakthroughs in various fields of science and technology. Tin oxide thin films are among the
widely studied metal oxide thin film materials compared to other metal oxide thin films, all due to
their exceptional optoelectronic properties [1]–[3]. Transparent conducting SnO2 thin films are
extensively used as electrodes for numerous optoelectronic applications, like electroluminescent
devices and solar cells [1]–[7]. They are also used as catalysts and gas sensors [8], [9]. Dopants like
antimony, chlorine, cadmium, fluorine, and molybdenum are introduced to enhance tin oxide thin
films' optical and electrical properties. In this review work, we have considered Sb as the main
dopant along with fluorine [10][11] and sol-gel dip-coating (SGDC)method [11]–[13], Plasma
enhanced chemical vapor deposition (PE-CVD) [14][15]and spray pyrolysis[16] as the techniques
for synthesizing thin films. Antimony atoms are incorporated easily in the SnO2 matrix by
substitution with tin atoms directing to a low lattice parameter modification when compared to that
447
Eur. Chem. Bull. 2023,12(7), 447-455
Recent Perspectives in the Synthesis, Properties, and Applications of Thin Conducting SnO2 films

Section A-Research paper

of fluorine atoms [11], [12]. The properties of the thin conducting antimony doped tin dioxide films
involving the doping concentration, oxidation states of the dopant atom, etc. are studied using
characterization techniques such as secondary ion mass spectrometry (SIMS) & X-ray
photoelectron spectroscopy (XPS) [11], [12]. The TEM images of the doped thin films are also
considered for analyzing the effect of doping on the measured mean size of the crystallites [12].
This work also includes the correlation between the two synthesis techniques, which are the
organometallic chemical vapor deposition (OMCVD) method and sol-gel dip-coating method
(SGDC) [13]. Last, this review article also includes the various applications of conducting tin oxide
thin films in a variety of fields [17]–[30]
Scope of the Review
Thin films of tin oxide are studied in the thin-film category with a wide range of applications.
Different synthetic strategies can be used for thin films of desired quality. The objective of this
review is to shed light on the current situation of SnO2 focusing on antimony doped films and an
idea of how these are synthesized from their precursors using advanced techniques and, most
importantly, their applications. Moreover, this review also includes a comparison between the
above methods in various prospects which would be helpful for researchers to adopt the right way
as per their requirements.
Synthetic strategies
The thin film deposition is a way of preparing a thin film onto a surface called substrate or onto
previously deposited layers. Several techniques are used to deposit thin films onto the surface of the
substrate. The various deposition techniques employed can control the thickness of thin films. Thin
films usually vary in thickness ranging from a few hundred angstroms to tens of micrometers. A
brief idea of essential thin film deposition techniques is given in this section.

Sol-gel dip-coating (SGDC) method for the synthesis of antimony doped thin conducting SnO2
films. The Sol-gel method is one of the easiest and most widely used ways to develop thin films
with a wide variety of inorganic and nanocomposite materials. It allows a reasonable degree of
control of the various critical parameters, introducing flexibility that cannot be obtained using other
conventional techniques. Different wet thin film coating techniques include spray-coating, flow-
coating, spin-coating, and dip-coating techniques. This review concentrates on the dip-coating
method of sol-gel thin film synthesis. The following are the two methods of the dip-coating process
of sol-gel film synthesis.

The antimony doped SnO2 arrangements were set up from chloride precursors directly in the
laboratory. Solution of SnO2 was acquired by dissolving SnCl2.2H2O in absolute ethanol. The
solution with antimony was produced from SbCl3 and broke up in absolute ethanol. The two blends
were independently mixed and warmed in a closed vessel. The vessels were then opened and
blended, and heated again until the solvents were evaporated. They at long last got two powders
wholly mixed in a specific volume of absolute ethanol. The doped blend was last mixed and heat-
treated at a temperature of 50oC for two hours. The substrates for this synthesis method were
cleaned dried plates of pyrex glass, and afterward, they were covered up. The dip-coating apparatus
is set up inside a covered plexiglass chamber to oversee the pulling stage’s environment. The plates
were dunked vertically and cautiously into the solution and were left for a brief timeframe, pulled
back from the bath at a consistent rate. The lifting arm used to bring down the plates into the
solution and lift them is engine controlled and structured so that it can forestall any vibration. After
dipping, Sb: SnO2 gel films were dried at a temperature of 150◦C for around 40 minutes and heat-
treated at 500◦C for 15 minutes in consistent progression of pure and dry oxygen for densification.
The entire cyclic procedure can be rehashed to acquire layers of various thicknesses. It is possible to
superimpose up to 5 layers of around 100 nm each, and the thickness can be controlled and taken
care of using a Tencor "Alpha advance" device. The ratio between the initial quantities of antimony
chloride and tin chloride determined the dopant level present in the solution. The influence of more
extended aging of the doped solutions was not explored.[11], [12]
448
Eur. Chem. Bull. 2023,12(7), 447-455
Recent Perspectives in the Synthesis, Properties, and Applications of Thin Conducting SnO2 films

Section A-Research paper

The materials used to direct the trial are triethanolamine (TEA), Sn(O-i-Pr)4, and isopropanol
moving forward without any more contamination. The strategy for the experiment involves
conducting the investigation at room temperature and preparing the reaction mixture that includes
the addition of 1 molar proportionate triethanolamine to an isopropanol solution of the alkoxide
(0.1-0.7M). The blend was mixed for 2 hours at room temperature. At that point, deionized water
weakened with isopropanol was added, and the blend was mixed for 2 hours at room temperature.
This was utilized for the dip-coating of the SnO2 thin films by dipping the glass substrate to the
blend, fetching up at a consistent speed (6-18 cm/min), and desiccating for around 30 minutes in the
air to shape the thin films. The SnO2 thin films were developed by warming the thin films for 1 hour
at 6000C. The antimony-doped SnO2 film is prepared by utilizing a mixture of antimony
triethoxideSb(OEt)3and tin alkoxide to set up the solution. [13]

Synthesis of antimony doped thin conducting SnO2 films using Plasma Enhanced Chemical
vapor deposition method (PE-CVD). PE-CVD is a widely accepted method for transparent
conductive film development. The essential purpose behind its acknowledgment in thin-film
creation is its capacity to work at lower temperatures than the thermally determined Chemical
Vapor Deposition. PE-CVD uses plasma, an ionized gaseous species or particles, electrons, and
some impartial species in the ground and the excited states. PE-CVD uses reactive species like
electrons and free radicals to develop thin films at lower temperatures. The following is a method of
thin-film development using PE-CVD.[14]

Sb doped tin oxide films were set up by PE-CVD strategy utilizing SbCl5, SnCl4, and O2 as
antecedents. A mass flow controller is used to control the flow rate of the gas phase mixture
separately. The pre-cleaned substrate corning glass was mounted on an alumina susceptor within the
reaction chamber. K-type thermocouple and mass flow controller will monitor the substrate's
temperature and partial pressure. Condensation during the flow of reacting gas was prevented by the
presence of the heating string that kept outlet tubes from the bubbler at a temperature of 60 oC. After
antimony doped tin oxide films were saved onto the substrate, the samples were permitted to come
down to a lower temperature. Antimony doping is usually possible by keeping an optimum partial
pressure PSnCl4 0.0038 torr; PO2, 0.56 torr; and the total pressure, one torr. The SbCl 5 partial
pressures were in the range of zero to 0.01 torr. The deposition temperatures differ from 250 oC to
500oC, changing the RF power from the range of 15 to 90 W.[14]

Spray pyrolysis technique to synthesize fluorine-doped thin SnO2 films. SnO2 thin films with
high crystallinity, conductivity, and transparency can be synthesized using tetra-n-dibutyltin (IV) as
the precursor and spray pyrolysis as the deposition technique. Highly oriented and ordered SnO 2
films are obtained, and it occurred through the arrangement of SnO2 cores, crystal growth with
favored direction, and the development of crystals on the substrate. F- ions are used as active
dopants; therefore, high-quality SnO2: F films can be created on glass substrate at a generally low
temperature, improving the figure of merit at low synthesis temperatures and increasing the
chemical stability and heat resistance.[16]
Tetra-n-dibutyltin (IV) is added to ethanol solution and additives of H2O2 and NH4F of molar ratio
of 0-2.5([H2O2] /[TBT]) and [NH4F] /[TBT] are prepared. The solution is then sprayed by using a
spray gun fixed 30 cm above the substrate holder with a glass substrate and heated to a temperature
of about 299°C to 490°C. It is compressed by air until the substrate temperature is cooled by mist.
This process is repeated as many times as desired, thus forming a film thickness of 120nm. The
solution is sprayed into the air by using a perfume atomizer cleaned with organic solvents.
Thickness increases linearly with the increase in the cycles. The crystal structure is determined by
CuKα radiation. By adding H2O2 to the source solution, the substrate temperature was decreased to
340oC. The job of H2O2 is to advance SnO2 arrangement not just by actuating an oxygen

449
Eur. Chem. Bull. 2023,12(7), 447-455
Recent Perspectives in the Synthesis, Properties, and Applications of Thin Conducting SnO2 films

Section A-Research paper

environment during the pyrolysis of tetra-n-butyltin(IV) yet additionally by delivering tin peroxide
complex in the source arrangement.[16]

Sol-Gel Technique to synthesize Fluorine-Doped Tin Oxide Thin Films. To utilize SnO2 thin
film as a conducting layer, the resistivity of SnO2 should be brought down. In this manner, fluorine
has also been used as a dopant for SnO2. The fluorine particle replaces the O2- atoms and goes
about as an electron contributor, which brings about an n-type semiconductor. Fluorine is a perfect
replacement for oxygen because the anionic sizes of both fluorine and oxygen are comparable. The
vitality of separation of the Sn−F bond is like that of the Sn−O bond. The sol-gel process is more
advantageous over different techniques because of its simplicity, ease, and the chance of film
deposition onto huge and complex substrates.[10]

Fluorine was doped just as the undoped SnO2 films were saved on microscopic glass substrates
using a sol-gel strategy utilizing a dip-coating procedure. The antecedent (SnCl2·2H2O) was made
to dissolve into 5 ml of HCl acid and was heated for 10 minutes at 60˚C. A solution of ethanol was
prepared of suitable concentration to upgrade the gel development, and a few drops of
Triethanolamine were added to the readied mixture. The ammonium fluoride included in the pre-
blended solution is the origin of the fluorine doping molecules. The subsequent solution was mixed
at 60˚C for 2 hours; a clear and homogeneous arrangement was obtained; it was left for a day at
room temperature resulting in a gel-like structure. The dipped glass substrates were released
vertically with a consistent rate of 8 cm per minute from the solution. For the development of film
with the desired thickness, fifteen dippings were rehashed; after each dipping, the deposited films
were dried at a temperature of 100˚C and then annealed for 1.5 hours at 450˚C in air.

Comparison between the sol-gel dip coating and the chemical vapor deposition. In dip-coating
(sol-gel method), batch-like film development occurs. Uniform film thickness is obtained from a
single dip drying heat cycle. Multiple coating is required to get the thick film, yet progression
between the layers is questionable. Fine crystals are acquired without pores, and a smooth and
homogenous surface makes the film transparent. This method shows magnificent film
reproducibility because of the steady viscosity gained. Multicomponent films are delivered by
dissolving the applicable compound to the solution for a polymer network arrangement by
controlling the composition. The film stress is malleable, and any alterations cannot bring it down
as it might cause breaks in the film. An optimum temperature of 6000C is maintained to get a thick
film. A lower temperature may cause crystallization, and a higher temperature can bring cracks in
the movie. Another significant advantage is utilizing even the large substrates to make conductive
transparent thin films. [13]
In OMCVD, it shows a continuous growth procedure, and there is the formation of uniform thick
films, and it was acquired in a brief timeframe period. The volatile starting material is required for
the process. They aggregate as large size crystals with large pores. On surface and cross-sectional
area examination, uneven surfaces are observed. Numerous boundary conditions, including the
temperature of carrier gas and vapor pressure of source, need to be controlled, or it may result in
thick films. An ideal temperature of 6000C must be maintained throughout. A temperature above
6000C may bring some homogeneous vapor phase reactions that will result in powdery film
development, and a temperature below 600oC may result in films that are hard to prepare. In this
process, composition control is not dependable and straightforward.
Examination of OMCVD films suggests that dip-coating films were less crystallized, denser, and
more uniform than OMCVD films. So, it is unrivalled in the synthesis of thin films, while OMCVD
has an incentive in developing thicker films.
In contrast to other synthetic strategies included in this review, spray pyrolysis approaches have
a few unique points of interest. Firstly, due to the simple model of apparatus and the procedure. It is
a procedure mainly used to prepare tin oxide thin films as it is direct, cheap, low-cost equipment
and raw materials. In addition to this, the films’ thickness and the deposition rate can be easily
450
Eur. Chem. Bull. 2023,12(7), 447-455
Recent Perspectives in the Synthesis, Properties, and Applications of Thin Conducting SnO2 films

Section A-Research paper

guarded over a broad range by changing the spray parameters such as the nature of added
substances, flow rates, and the convergence of reactants in the antecedent solution. The spray
pyrolysis method has been applied to store a broad scope of thin films utilized in different gadgets,
such as photovoltaic cells, solid oxide fuel cells, and sensors.

Analysis of properties of Sb and F doped SnO2 thin conducting films

Analysis of antimony doped thin films using X-Ray Photoelectron Spectroscopy. The extent of
antimony doping was analysed primarily using XPS analysis as per the previous reports [11], [12].
The first set of doped samples was analyzed with theoretical doping levels (Dpsol) as 3, 6, 8, 9, 10,
and 12%. The antimony peaks were not detected on the corresponding XPS spectra. So, it may be
concluded that the antimony had not been incorporated, but the detection limits of the XPS method
must also be taken into account. In fact, for all actual doping Dpcoat ≤ 4.5%, the XPS method
appears to be not sensitive enough to give evidence of the antimony species in the deposited SnO2
layers. Therefore, we need the SIMS characterization to prove that these layers are effectively
doped but with relatively weak doping concerning those expected theoretically from the starting
solutions.
The main result of these experiments is that the actual doping Dpcoat is less than the doping
levels in the initial solutions. The weakest Dpcoat detected by XPS in the films is about 3.8%,
corresponding to a theoretical doping Dpsol of 20%. The greatest Dpsol of 45% corresponds to 22%
in the layers. This fact shows the difficulty in transferring the antimony from the solution to the gel.
The lack of doping atoms in the resulting film is not yet understood. Several hypotheses have
been proposed: (a) an incomplete disintegration of the antimony chloride in C2H5OH; (b) a
possible development of Sb-based precipitates in the Sol-Gel Dip-Coating solution; (c) a formation
of Sb-based volatile compounds evaporating from the meniscus during the pulling process or
annealing. Together, each of these procedures may contribute to this "loss" of dopant and are
somewhat hard to confirm experimentally.
As the Sb content increments, and as revealed in different works identified with varying
elaboration strategies, a more exceptional, somewhat bluish coloration of the films is observed.

Analysis of antimony doped tin oxide thin films using TEM and SIMS Technique. SIMS has
also studied all the doping concentrations quoted in the above analysis. It was observed by C.
Terrier et al. on all spectra obtained that the antimony presence is noted even for the lower doping
concentrations where the XPS technique did not detect its presence. The SIMS characterization is
much more sensible at lower doping concentrations. [11][12]
The thinnest samples are analyzed using Transmission Electron Microscopy (TEM) according to the
various doping levels. All films obtained are polycrystalline, and the amorphous zones are not
observed. The diffraction pattern for each doping gives the same diagram. It is evident from the
TEM images obtained that the crystallite size decreases when the doping concentration increases.

The oxidation states of antimony in SnO2 films [12][11]

When the actual doping Dpcoat expands, the binding energy changes show the nearness of two
oxidation states of the antimony. The two oxidation states are Sb3+ and Sb5+. According to some
authors, the transfer of charge from Sb5+ and Sb3+ was the reason for the bluish coloration
observed on the thin film layers. It is found that with the increase in the concentration of antimony
doping, the +3 oxidation state of Sb dominates over the +5 oxidation state, which is evident from
the deconvoluted spectra of Sb 3d3/2 line as a function of Sb content in the SnO 2 layers. The XPS
measurement indicates that the antimony has two oxidation states, Sb3+ and Sb5+.

451
Eur. Chem. Bull. 2023,12(7), 447-455
Recent Perspectives in the Synthesis, Properties, and Applications of Thin Conducting SnO2 films

Section A-Research paper

Application of tin oxide films [17]–[30]

SnO2 films have intensively investigated applications in the field of transparent electrodes,
catalytic support materials, transparent heat reflecting films [25], heterojunction solar cells, gas
sensors [8], [24], [27], and protective coating solar cells owing to its exquisite properties. Mainly
SnO2 is extensively studied in the field of microsensor devices. SnO2 transparent conductive films
raised enthusiasm because of their broad scope of significant commercialization in the field of
electroluminescent display, liquid crystal displays, touch display panels, and organic light emitted
diodes [17], [18], [28]. SnO2 is a semiconductor that is mechanically hard, chemically inert, and
highly transparent oxide with good environmental stability and high resistance to temperature, have
opened up numerous applications not only limited to research laboratories but also in low and high
technology applications, including instrumental panels, antistatic coatings, optical coatings, and
environmental monitoring. Significant utilization of thin-film innovation from the worldwide
vitality crunch is the photovoltaic cell, which changes over the vitality of the photovoltaic radiation
into helpful electrical energy. As of late, usage of the pioneer transparent conductor SnO 2 thin film
as conducting solar materials created an eagerness for the commercialization of solar cells. Among
the various conductive oxides, antimony doped SnO2 thin films give off an impression of being the
most legitimate in solar cells [5], [6] attributable to its large optical conveyance with less specific
electrical resistance.

P-N junction diode

Transparent Conductive Oxides (TCOs) with wideband gaps are useful substances because of
their tunability to effectively consolidate the high and low conductivity alongside the high visual
transparency. TCO substances showing high optical transparency and electrical conductivity can be
developed as thin film and are utilized considerably for various capacities comprising design
windows, optoelectronic units, photovoltaic cells, ion storage, and defrosting windows in fridges
and planes, and flat panel displays. TCOs have a legitimate total of optical and electrical properties
that bring about their expansive mechanical property. N-type material of SnO2 is very notable and
generally utilized. Contrasting with some different oxides, SnO2 shows more potential for stable p-
type conducting oxides because of its weak ionization. The chemical nature of the potential barrier
considered had been encouraged by the more homogeneous microstructure of tin oxides. The non-
linear properties are a direct result of the physical heart. Numerous endeavors have been made with
p-SnO2 and n-SnO2 films to blend p-n junction diodes.

Semiconductor Nanowires [29]–[32]

Over the most recent couple of years, semiconductor nanowires have pulled in expanding
enthusiasm for the field of novel gadget applications because of their rich properties. They can be
manufactured on various substrates, including plastic and glass. On examination with the traditional
thin films, nanowires separate the device fabrication stages, with no concern about the compatibility
and crystalline materials obtained at the high growth temperature. Synthesis of nanowires is first
done under the optimum condition to yield top quality single crystal materials, in which structure,
composition, and size of material will oversight the optoelectronic properties. Large quantities of
SnO2 nanowires with high optical conveyance with minimal development and the simplicity of
acquiring Ohmic contacts are combined utilizing a simple vapor transport. Doping procedures of
SnO2 nanowires show a sensational impact on its electric property. The best thin films that show
metal-like conductivity and low resistivity are antimony doped SnO2 nanowires. Various sorts of
SnO2 nano-thin films are explored as nanoparticles [29], [30], nanosheets[33], nano rods[31], and
nanowires[32] has been utilized in numerous applications, for example, lithium battery [19],
photovoltaic vitality converter [23], directing electrodes [34], aqueous salt arrangement [25]
harmful gas sensors [9], optoelectronic gadgets [20]–[22] and heat-reflecting mirrors [24].

452
Eur. Chem. Bull. 2023,12(7), 447-455
Recent Perspectives in the Synthesis, Properties, and Applications of Thin Conducting SnO2 films

Section A-Research paper

Conclusions

The thin tin oxide films are extensively studied in the thin films category with many
applications. Their various properties account for this vast tin oxide thin film application spectrum.
Different synthetic strategies can be used for thin films of desired quality. The Sol-Gel dip-coating
method of antimony doped SnO2 thin films and its further development prove that while
transmitting antimony to the gel from the solution, there is a considerable loss in dopant
concentration. This dopant loss has not been studied extensively, but several hypotheses have been
proposed to support the same. The amount of antimony in the SnO2 films can be reviewed by
Secondary Ion Mass Spectrometry and X-ray Photoelectron Spectroscopy. As the Sb amount
increases, the TEM observation showed a decrease in the mean size of crystallites. The elaboration
of thin films by (PE-CVD) is a widely accepted method for producing thin films. It is widely
accepted because it is lower temperature compared to thermally driven CVD. The spray pyrolysis
deposition technique of tetra-n-butyltin (lV) has developed SnO2 thin films with a high order of
crystallinity, conductivity, and transparency. The resistivity of SnO2 needs to be reduced to use
SnO2 thin films as a conducting layer. The N-type semiconductor can be prepared when O2- of
SnO2 is replaced by Fluorine atom, where Fluorine is used as a dopant and acts as an electron
donor. Thin films having high constancy and compactness were obtained by the dip-coating method
by doping Sb in SnO2, in which the films have increased transparency and conductivity. The Sol-gel
process undoubtedly has advantages over other methods because it has possibilities of film
deposition to large complex substrates, low cost, and simplicity. SnO2 films find several
applications in transparent electrodes, catalytic support materials, transparent heat reflecting films,
heterojunction solar cells, gas sensors, and protective coating solar cells, owing to their exquisite
properties. In conclusion, tin oxide thin films are essential candidates for recent and future research
due to their easy and cost-effective synthetic strategies and exciting properties.

Conflict of Interest
On behalf of all authors, the corresponding author states that there is no conflict of interest.

References

[1] M. K. Jayaraj, K. J. Saji, K. Nomura, T. Kamiya, and H. Hosono, ―Optical and electrical
properties of amorphous zinc tin oxide thin films examined for thin-film transistor application,‖ J.
Vac. Sci. Technol. B Microelectron. Nanom. Struct. Process. Meas. Phenom., vol. 26, no. 2, pp.
495–501, Mar. 2008, doi: 10.1116/1.2839860.
[2] S.-S. Lin, Y.-S. Tsai, and K.-R. Bai, ―Structural and physical properties of tin oxide thin
films for optoelectronic applications,‖ Appl. Surf. Sci., vol. 380, pp. 203–209, 2016, doi:
https://doi.org/10.1016/j.apsusc.2016.01.188.
[3] A. R. Babar, S. S. Shinde, A. V Moholkar, C. H. Bhosale, J. H. Kim, and K. Y. Rajpure,
―Structural and optoelectronic properties of antimony incorporated tin oxide thin films,‖ J. Alloys
Compd., vol. 505, no. 2, pp. 416–422, 2010, doi: 10.1016/j.jallcom.2010.06.091.
[4] Q. Li, W. Mao, Y. Zhou, C. Yang, Y. Liu, and C. He, ―Defects evolution and their impacts
on conductivity of indium tin oxide thin films upon thermal treatment,‖ J. Appl. Phys., vol. 118, no.
2, p. 25304, Jul. 2015, doi: 10.1063/1.4923392.
[5] N. Srinivasa Murty and S. R. Jawalekar, ―Characterization of antimony-doped tin oxide
films for solar cell applications,‖ Thin Solid Films, vol. 108, no. 3, pp. 277–283, 1983, doi:
https://doi.org/10.1016/0040-6090(83)90075-5.
[6] K. Moedritzer and R. R. Irani, ―The Direct Synthesis of α-Aminomethylphosphonic Acids.
Mannich-Type Reactions with Orthophosphorous Acid,‖ J. Org. Chem., vol. 31, no. 5, pp. 1603–
1607, May 1966, DOI: 10.1021/jo01343a067.
453
Eur. Chem. Bull. 2023,12(7), 447-455
Recent Perspectives in the Synthesis, Properties, and Applications of Thin Conducting SnO2 films

Section A-Research paper

[7] Y. P. Yadava, G. Denicoló, A. C. Arias, L. S. Roman, and I. A. Hümmelgen, ―Preparation

and characterization of transparent conducting tin oxide thin film electrodes by chemical vapor
deposition from reactive thermal evaporation of SnCl2,‖ Mater. Chem. Phys., vol. 48, no. 3, pp.
263–267, 1997, doi: 10.1016/S0254-0584(96)01899-8.
[8] V. S. Vaishnav, P. D. Patel, and N. G. Patel, ―Preparation and characterization of indium tin
oxide thin films for their application as gas sensors,‖ Thin Solid Films, vol. 487, no. 1, pp. 277–282,
2005, doi: https://doi.org/10.1016/j.tsf.2005.01.079.
[9] M. A. M. Hassan, A. A. Hateef, A. M. A. Majeed, A. J. M. Al-Jabiry, S. Jameel, and H. A.
R. A. Hussian, ―Amperometric biosensor of SnO2 thin film modified by Pd, In and Ag
nanostructure synthesized by CSP method,‖ Appl. Nanosci., vol. 4, no. 8, pp. 927–934, 2014, doi:
10.1007/s13204-013-0270-5.
[10] A. Adjimi, M. L. Zeggar, N. Attaf, and M. S. Aida, ―Fluorine-Doped Tin Oxide Thin Films
Deposition by Sol-Gel Technique,‖ J. Cryst. Process Technol., vol. 08, no. 04, pp. 89–106, 2018,
doi: 10.4236/jcpt.2018.84006.
[11] C. Terrier, J. P. Chatelon, R. Berjoan, and J. A. Roger, ―Sb-doped SnO2 transparent
conducting oxide from the sol-gel dip-coating technique,‖ Thin Solid Films, vol. 263, no. 1, pp. 37–
41, 1995, doi: https://doi.org/10.1016/0040-6090(95)06543-1.
[12] Z. Liu, M. Zhu, Z. Wang, H. Wang, C. Deng, and K. Li, ―Novel antimony doped tin
oxide/carbon aerogel as an efficient electrocatalytic filtration membrane,‖ AIP Adv., vol. 6, no. 5, p.
55015, May 2016, DOI: 10.1063/1.4950799.
[13] Y. Takahashi and Y. Wada, ―Dip‐ Coating of Sb‐ Doped SnO2 Films by
Ethanolamine‐ Alkoxide Method,‖ J. Electrochem. Soc., vol. 137, no. 1, pp. 267–272, 1990, doi:
10.1149/1.2086380.
[14] K.-S. Kim, S.-Y. Yoon, W.-J. Lee, and K. Ho Kim, ―Surface morphologies and electrical
properties of antimony-doped tin oxide films deposited by plasma-enhanced chemical vapor
deposition,‖ Surf. Coatings Technol., vol. 138, no. 2, pp. 229–236, 2001, doi:
https://doi.org/10.1016/S0257-8972(00)01114-2.
[15] D. Dodoo-arhin, M. Leoni, and P. Scardi, ―Edited by Sanjay Mathur and Francisco
Hernandez-Ramirez . © 2014 The American Ceramic Society. Published 2014 by John Wiley &
Sons, Inc .,‖ Ceram. Eng. Sci. Proc., pp. 23–34, 2014.
[16] M. Okuya, S. Kaneko, K. Hiroshima, I. Yagi, and K. Murakami, ―Low temperature
deposition of SnO2 thin films as transparent electrodes by spray pyrolysis of tetra-n-butyltin(IV),‖
J. Eur. Ceram. Soc., vol. 21, no. 10, pp. 2099–2102, 2001, doi: https://doi.org/10.1016/S0955-
2219(01)00180-7.
[17] A. C. Arias, L. S. Roman, T. Kugler, R. Toniolo, M. S. Meruvia, and I. A. Hümmelgen,
―Use of tin oxide thin films as a transparent electrode in PPV based light-emitting diodes,‖ Thin
Solid Films, vol. 371, no. 1, pp. 201–206, 2000, doi: 10.1016/S0040-6090(00)00967-6.
[18] M. Park et al., ―Ultrafast laser ablation of indium tin oxide thin films for organic light-
emitting diode application,‖ Opt. Lasers Eng., vol. 44, no. 2, pp. 138–146, 2006, doi:
https://doi.org/10.1016/j.optlaseng.2005.03.009.
[19] J. Chen, ―Recent progress in advanced materials for lithium ion batteries,‖ Materials
(Basel)., vol. 6, no. 1, pp. 156–183, 2013, doi: 10.3390/ma6010156.
[20] L. C. Nehru, V. Swaminathan, and C. Sanjeeviraja, ―Photoluminescence Studies on
Nanocrystalline Tin Oxide Powder for Optoelectronic Devices,‖ Am. J. Mater. Sci., vol. 2, no. 2,
pp. 6–10, 2012, doi: 10.5923/j.materials.20120202.02.
[21] N.-G. Park, M. G. Kang, K. S. Ryu, K. M. Kim, and S. H. Chang, ―Photovoltaic
characteristics of dye-sensitized surface-modified nanocrystalline SnO2 solar cells,‖ J. Photochem.
Photobiol. A Chem., vol. 161, no. 2, pp. 105–110, 2004, doi: https://doi.org/10.1016/S1010-
6030(03)00280-6.
[22] I. DewaPutuHermida, ―Development Of Co Gas Sensing Based SnO2\nThin Film,‖ Int. J.
Eng. Technol. IJET-IJENS, vol. Vol:13, no. 01, 2013.

454
Eur. Chem. Bull. 2023,12(7), 447-455
Recent Perspectives in the Synthesis, Properties, and Applications of Thin Conducting SnO2 films

Section A-Research paper

[23] R. Riveros, E. Romero, and G. Gordillo, ―Synthesis and characterization of highly

transparent and conductive SnO2:F and in2O3:Sn thin films deposited by spray pyrolysis,‖
Brazilian J. Phys., vol. 36, no. 3 B, pp. 1042–1045, 2006, DOI: 10.1590/S0103-
97332006000600065.
[24] B. Patil Shriram, A. More Mahendra, and V. Patil Arun, ―Molybdenum doped SnO2 thin
films as a methanol vapor sensor,‖ Sensors and Transducers, vol. 149, no. 2, pp. 43–48, 2013.
[25] L. Duy, ―SnO 2 Nanostructures Synthesized by Using a Thermal Evaporation Method,‖ vol.
52, no. 5, pp. 1689–1692, 2008.
[26] J. G. Partridge et al., ―Nanostructured SnO2films prepared from evaporated Sn and their
application as gas sensors,‖ Nanotechnology, vol. 19, no. 12, p. 125504, 2008, DOI: 10.1088/0957-
4484/19/12/125504.
[27] Z. Jin, H.-J. Zhou, Z.-L. Jin, R. F. Savinell, and C.-C. Liu, ―Application of nano-crystalline
porous tin oxide thin film for CO sensing,‖ Sensors Actuators B Chem., vol. 52, no. 1, pp. 188–194,
1998, doi: https://doi.org/10.1016/S0925-4005(98)00272-X.
[28] R. Sreekrishnan, S. Karthika, N. S. Roshima, and V. Rakhesh, ―Structural and electrical
properties of tin oxide films deposited by SILAR and spin coating techniques,‖ AIP Conf. Proc.,
vol. 2162, no. 1, p. 20137, Oct. 2019, doi: 10.1063/1.5130347.
[29] A. J. Haider, A. Jasim Mohammed, S. S. Shaker, K. Z. Yahya, and M. J. Haider, ―Sensing
Characteristics of Nanostructured SnO2 Thin Films as Glucose Sensor,‖ Energy Procedia, vol. 119,
pp. 473–481, 2017, doi: 10.1016/j.egypro.2017.07.056.
[30] R. H. Bari and S. B. Patil, ―Studies on Spray Pyrolised Nanostructured SnO2 Thin Films for
H2 Gas Sensing Application,‖ Int. Lett. Chem. Phys. Astron., vol. 36, pp. 125–141, 2014, DOI:
10.18052/www.scipress.com/ILCPA.36.125.
[31] J. H. Lim, J. Y. Ryu, H. S. Moon, S. E. Kim, and W. C. Choi, ―Characterization of ZnO
nanorods and SnO2-CuO thin film for CO gas sensing,‖ Trans. Electr. Electron. Mater., vol. 13, no.
6, pp. 305–309, 2012, DOI: 10.4313/TEEM.2012.13.6.305.
[32] E. N. Dattoli, Q. Wan, W. Guo, Y. Chen, X. Pan, and W. Lu, ―Fully Transparent Thin-Film
Transistor Devices Based on SnO2 Nanowires,‖ Nano Lett., vol. 7, no. 8, pp. 2463–2469, Aug.
2007, DOI: 10.1021/nl0712217.
[33] A. Johari, M. C. Bhatnagar, and V. Rana, ―Growth, characterization and I-V characteristics
of tin oxide (SnO2) nanowires,‖ Adv. Mater. Lett., vol. 3, no. 6, pp. 515–518, 2012, doi:
10.5185/amlett.2012.icnano.251.
[34] A. Stadler, ―Transparent Conducting Oxides—An Up-To-Date Overview,‖ Materials
(Basel)., vol. 5, no. 12, pp. 661–683, 2012, doi: 10.3390/ma5040661.

455
Eur. Chem. Bull. 2023,12(7), 447-455