See discussions, stats, and author profiles for this publication at: https://www.researchgate.

net/publication/234851819

High voltage fast ramp pulse generation using avalanche transistor

Article  in  The Review of scientific instruments · August 1998

DOI: 10.1063/1.1149056

CITATIONS READS
41 6,177

3 authors, including:

Zenghu Chang
University of Central Florida
388 PUBLICATIONS   11,724 CITATIONS   

SEE PROFILE

Some of the authors of this publication are also working on these related projects:

Physics informed neural network for imaging and other optics applications View project

KSU laser COLTRIMS View project

All content following this page was uploaded by Zenghu Chang on 11 December 2014.

The user has requested enhancement of the downloaded file.

REVIEW OF SCIENTIFIC INSTRUMENTS VOLUME 69, NUMBER 8 AUGUST 1998

High voltage fast ramp pulse generation using avalanche transistor

Liu Jinyuan, Shan Bing, and Chang Zenghu
State Key Laboratory of Transient Optics Technology, Xi’an Institute of Optics and Precision Mechanics,
Xi’an, Shaanxi, People’s Republic of China 710068
~Received 29 May 1997; accepted for publication 27 April 1998!
The authors have developed an avalanche transistor based pulser for use as a pockel cells driver and
for gating a microchannel plate. The output voltage ranges from 1–4 kV to 50 V, with fall times of
200–300 ps. The repetition rate is less than 1 kHz. The trig jitter is less than 100 ps. Trig delay is
about 8 ns. © 1998 American Institute of Physics. @S0034-6748~98!02607-0#

I. INTRODUCTION transistor (Q 11) in the first string is triggered via a small

ferrite bead pulse transformer (T 1 ). When Q 11 is triggered,
High voltage ultrafast electrical pulse has been widely
this places the collector of the first transistor (Q 11) near
used in laser technology, high speed photography, and
ground potential, resulting in about 700 V collector-to-
nuclear physics. Some typical applications are sweeping cir-
emitter voltage across the second transistor (Q 12). The sec-
cuits for streak camera, gating microchannel plate, driving
ond transistor suffers a nondestructive avalanche breakdown
the pockel cells, and laser diode. In this article, we present a
due to this overvoltage. As each transistor turns on, the next
design for high speed, high voltage ramp pulse generator
suffers an even greater overvoltage resulting in faster rise
using avalanche transistors. This circuit consists of five
time and shorter delay. At last the final transistor (Q 58) turns
strings of avalanche transistors which are connected in the
on and a high voltage, fast rise time pulse is produced.
Marx bank configuration.1–4 As with any very high speed
The positive and negative power supplies (61.5 kV) are
circuit, layout is important. Note 50 V transmission line
connected to each string of transistors through double 2 MV
structure is designed to minimize stray inductance and de-
resistors. The standby current in each string is limited to less
crease the rise time of output pulse.
than 50 mA. This small bias current is helpful to improve the
stability of this circuit. The output pulse width is limited to
II. THEORY OF OPERATION less than 15 ns, because we have found that these transistors
The working theory of the avalanche transistor is well tend to burn out in a short time if the pulse width is wider.
known. For single avalanche transistor the output current is There are two advantages of this configuration.
expressed by ~1! Relative lower voltage power supply is used. This pre-
I L 5 ~ V CBO2V CEO! /R L , ~1! vents producing a corona in this circuit.
~2! It is helpful to shorten the rise time of the output pulse.
where R L is load resistor. V CBO is the breakdown voltage
when base and emitter are connected, V CEO is the breakdown
III. COMPONENT SELECTION
voltage when base and emitter are open.
The conventional approach to increase the output volt- The avalanche transistors used are 2N5551, the V CBO of
age is to use a string of avalanche transistors, or a Marx transistor is about 350 V, V CEO is about 200 V. We have
bank-type design. The Marx bank-type design has the advan-
tage of a lower power supply voltage, but at the cost of much
more stored charge. The advantage of a single long string of
avalanche transistors is that it reduces the total stored charge
of the system, which prevents damage to the pulser due to
self-trigger or breakdown. The disadvantage with this circuit
is that the DC power supply voltage cannot be very high,
otherwise it will produce a corona. The combination of the
two types of design is an ideal method to produce high volt-
age ultrafast pulses. Figure 1 is the schematic diagram of our
circuit.
This circuit consists of five strings of avalanche transis-
tors which are mounted on a 50 V transmission line. There
are eight transistors in each string. In order to keep stray
inductance to minimum, the capacitors are formed by pads
on the double-sided printed circuit board. The inductance of
the transistors and the PC board capacitors form a 50 V
coplanar waveguide transmission line structure. The first FIG. 1. High voltage pulse generator circuit.

0034-6748/98/69(8)/3066/2/$15.00 3066 © 1998 American Institute of Physics

Downloaded 07 Jan 2003 to 128.104.223.214. Redistribution subject to AIP license or copyright, see http://ojps.aip.org/rsio/rsicr.jsp
Rev. Sci. Instrum., Vol. 69, No. 8, August 1998 Jinyuan, Bing, and Zenghu 3067

FIG. 2. Photograph of the high voltage circuit.

noted that the difference of breakdown voltage of this kind

of transistor is much greater, and the breakdown voltage FIG. 4. Entire output pulse wave form from this circuit.
drifted during the test. This will result in a change of trigger
delay and output swiching voltage. In order to resolve these selected the transistors with the same breakdown voltage, the
problems, an avalanche transistors ‘‘burn-in’’ tester was used same trigger delay, the same rise time, and with small trigger
to ‘‘cook’’ a number of transistors for several months. We jitter.

IV. CIRCUIT DESIGN AND MEASUREMENT RESULT

The rise time of output pulse is basically determined by
the stray capacitance in the last string and by how fast the
last string of transistors turns on. Determination of the stray
capacitance in the last string is fairly simple. Figure 2 is the
photograph of this circuit.
The circuit should have a 50 V impedance to match the
load. Assuming the inductance of each avalanche transistor
is 2 nH, the total inductance in the last string ~eight transis-
tors! is 16 nH. The stray capacitance in the last string can be
calculated by

Z5 A L
C Z
L
⇒C5 2 ⇒C5
16 nH
502
56.4 pf. ~2!

Using this data we can calculate the rise time of output pulse,
RC550 V36.4 pf5320 ps. The stray capacitance is formed
by the pads on the printed circuit board. Figure 3 is the
output ramp pulse from this circuit measured by the oscillo-
scope Tek 11801A and attenuators which are manufactured
by Barth electronics, Inc. Figure 4 is the entire pulse.

1
S. W. Thomas, Proc. SPIE 491, 101 ~1984!.
2
R. J. Baker, Rev. Sci. Instrum. 62, 1031 ~1991!.
3
B. Cunin, Rev. Sci. Instrum. 51, 103 ~1980!.
FIG. 3. Ramp pulse with rise time 250 ps, amplitude 4 kV. 4
S. W. Thomas, Proc. SPIE 1358, 578 ~1990!.

Downloaded 07 Jan 2003 to 128.104.223.214. Redistribution subject to AIP license or copyright, see http://ojps.aip.org/rsio/rsicr.jsp
View publication stats