Ultra-Low Noise

PNP Expitaxial Transistor

2SV888
1. Ultra Low-Noise Audio Amplifier Applications

The 2SV888 is a PNP epitaxial transistor which has been optimized for use in audio applications. The ultra-low input
voltage noise of the 2SV888 is typically only 0.3 dB over the entire audio bandwidth of 20 Hz to 20 kHz. Its ultra-low
noise, high bandwidth and high current gain make the 2SV888 an ideal choice for demanding ultra-low noise preamplifier
applications.

2. Ultra Low-Noise Audio Amplifier Applications

• Low-noise: NF=2dB(typ.) RG=100Ω, VCE=6V, Ic=100uA, f=1kHz

: NF=0.3dB(typ.) RG=1kΩ, VCE=6V, Ic=100uA, f=1kHz
• High DC current gain: HFE=200-700
• High breakdown voltage: VCEO=-120V
• Low pulse noise. Low 1/f noise

TO-92

1
2
3

1. Emitter 2. Collector 3. Base

Information furnished by COOLAUDIO is believed to be accurate and

reliable. However, no responsibility is assumed by COOLAUDIO for
its use, nor for any infringements of patents or other rights of third
parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of
COOLAUDIO.
Rev. 1.0

1
 2SV888
3. Absolute Maximum Ratings (Ta=25°C)

Characteristic Symbol Rating Unit

Collector-Base Voltage VCBO -120 V

Collector-Emitter Voltage VCEO -120 V

Emitter-Base Voltage VEBO -5 V

Collector Current (DC) IC -100 mA

Base Current (DC) IB -20 mA

Collector Dissipation PC 300 mW

Junction Temparature TJ 150 °C

Storage Temparature TSTG -55-150 °C

4. Electrical Characteristics (Ta=25°C)

Characteristic Symbol Test Conditions Min Typ Max Unit

Collector Cut-off Current I CBO VCB=-120V, I E=0 -0.1 uA

Emitter Cut-off Current I EBO VEB=-5V, I C=0 -0.1 uA

Collector-Emitter Breakdown Voltage BVCEO I C-1mA, I B=0 -120 V

Emitter-Base Breakdown Voltage BVEBO I E=-100uA, I C=0 -5 V

Collector-Base Breakdown Voltage BVCBO I C=-100uA, I E=0 -120 V

Collector-Emitter Saturation Voltage VCE(sat) I C=-10mA, I B=-1mA -0.3 V

Base-Emitter Voltage VBE VCE=-6V, I C=-2mA -0.65 V

DC Current Gain HFE1 VCE=-6V, I C=-2mA 200 700

Currnet Gain Bandwidth Product fT VCE=-6V, I C=-1mA 100 MHz

Output Capacitance COB VCB=-10V, I E=0, f=1MHz 4.0 pF

VCE=-6V, I C=-0.1mA,
4
f=10Hz, RG=10k Ω

VCE=-6V, I C=-0.1mA,
Noise Figure NF 1.2 dB
f=1kHz, RG=10k Ω

VCE=-6V, I C=-0.1mA,
2
f=1kHz, RG=100 Ω

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 2SV888
a. Box1

b. Box2

Plastic Bag Box

Packing Pcs/Bag Bags/Box2 Box2/Box1 Pcs/Box1

2SA970GR 1000 10 10 100,000

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 2SV888
c. Green-Mark

Material Weight Material Analysis Material Analysis

Name of the Part Material Name
(mg/unit) (element) (weight%)

Fe 2.4%
Zn 0.03%
Leadframe 27 PMC
P 0.12%
Cu 97.45%

Epoxy Resin 15%

Si02 73%
Plastic 47 Epoxy Resin 8%
<1%
3%

Si 99.4%
Chip 1.25 Doped Silicon
Al 0.6%

Wires 5 Gold Au 99.99

Leads Finishing 0.25 Lead-Free Pb<100ppm