DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

M3D100

BF470; BF472
PNP high-voltage transistors
Product specification 1996 Dec 09
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
Philips Semiconductors Product specification

PNP high-voltage transistors BF470; BF472

FEATURES
• Low feedback capacitance.

handbook, halfpage
APPLICATIONS 2
• Class-B video output stages in television receivers and
for high-voltage IF output stages. 3

DESCRIPTION 1

PNP transistors in a TO-126; SOT32 plastic package.

NPN complements: BF469 and BF471.
1 2 3 Top view MAM272

PINNING

PIN DESCRIPTION
1 emitter
Fig.1 Simplified outline (TO-126; SOT32) and
2 collector, connected to mounting base symbol.
3 base

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter
BF470 − −250 V
BF472 − −300 V
VCEO collector-emitter voltage open base
BF470 − −250 V
BF472 − −300 V
ICM peak collector current − −100 mA
Ptot total power dissipation Tmb ≤ 114 °C − 1.8 W
hFE DC current gain IC = −25 mA; VCE = −20 V 50 −
Cre feedback capacitance IC = ic = 0; VCE = −30 V; f = 1 MHz − 1.8 pF
fT transition frequency IC = −10 mA; VCE = −10 V; f = 100 MHz 60 − MHz

1996 Dec 09 2
Philips Semiconductors Product specification

PNP high-voltage transistors BF470; BF472

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter
BF470 − −250 V
BF472 − −300 V
VCEO collector-emitter voltage open base
BF470 − −250 V
BF472 − −300 V
VEBO emitter-base voltage open collector − −5 V
IC collector current (DC) − −50 mA
ICM peak collector current − −100 mA
IBM peak base current − −50 mA
Ptot total power dissipation Tmb ≤ 114 °C − 1.8 W
Tstg storage temperature −65 +150 °C
Tj junction temperature − 150 °C
Tamb operating ambient temperature −65 +150 °C

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient in free air; note 1 100 K/W
Rth j-mb thermal resistance from junction to mounting base 20 K/W
Note
1. Transistor mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for collector lead
minimum 10 × 10 mm.

CHARACTERISTICS
Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

ICBO collector cut-off current IE = 0; VCB = −200 V − −10 nA
IE = 0; VCB = −200 V; Tj = 150 °C − −10 µA
IEBO emitter cut-off current IC = 0; VEB = −5 V − −50 nA
hFE DC current gain IC = −25 mA; VCE = −20 V 50 −
VCEsat collector-emitter saturation voltage IC = −30 mA; IB = −5 mA − −600 mV
Cre feedback capacitance IC = ic = 0; VCE = −30 V; f = 1 MHz − 1.8 pF
fT transition frequency IC = −10 mA; VCE = −10 V; f = 100 MHz 60 − MHz

1996 Dec 09 3
Philips Semiconductors Product specification

PNP high-voltage transistors BF470; BF472

PACKAGE OUTLINE

2.7
max 7.8 max
handbook, full pagewidth

3.75
3.2
3.0
11.1
max

(1)
2.54
max
1.2

15.3
min

1 2 3

0.88
4.58 max
0.5 90 o
2.29 MBC076

Dimensions in mm.
(1) Terminal dimensions within this zone are uncontrolled.

Fig.2 TO-126; SOT32.

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1996 Dec 09 4
Philips Semiconductors Product specification

PNP high-voltage transistors BF470; BF472

NOTES

1996 Dec 09 5
Philips Semiconductors Product specification

PNP high-voltage transistors BF470; BF472

NOTES

1996 Dec 09 6
Philips Semiconductors Product specification

PNP high-voltage transistors BF470; BF472

NOTES

1996 Dec 09 7
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Printed in The Netherlands 117041/00/02/pp8 Date of release: 1996 Dec 09 Document order number: 9397 750 01567