NGD8201B

Ignition IGBT, 20 A, 400 V

N−Channel DPAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over−Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and www.onsemi.com
high current switching is required.
Features 20 AMPS, 400 VOLTS
• Ideal for Coil−on−Plug Applications VCE(on) 3 1.8 V @
• DPAK Package Offers Smaller Footprint for Increased Board Space IC = 10 A, VGE . 4.5 V
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp Limits C

Stress Applied to Load

• Integrated ESD Diode Protection
• New Design Increases Unclamped Inductive Switching (UIS) Energy G RG
Per Area
• Low Threshold Voltage Interfaces Power Loads to Logic or RGE
Microprocessor Devices
• Low Saturation Voltage E
• High Pulsed Current Capability
• Emitter Ballasting for Short−Circuit Capability 4
DPAK
• These are Pb−Free Devices 1 2
CASE 369C
STYLE 7
3
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit MARKING DIAGRAM
1
Collector−Emitter Voltage VCES 430 VDC
Gate
Collector−Gate Voltage VCER 430 VDC
AYWW 4
2
Gate−Emitter Voltage VGE 18 VDC NGD Collector
Collector
8201BG
Collector Current−Continuous IC 15 ADC
@ TC = 25°C − Pulsed 50 AAC 3
Emitter
ESD (Human Body Model) ESD kV
R = 1500 Ω, C = 100 pF 8.0 NGD8201B = Device Code
ESD (Machine Model) R = 0 Ω, C = 200 pF ESD 800 V A = Assemlby Location
Y = Year
Total Power Dissipation @ TC = 25°C PD 115 Watts WW = Work Week
Derate above 25°C 0.77 W/°C G = Pb−Free Device
Operating and Storage Temperature Range TJ, Tstg −55 to °C
+175
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be Device Package Shipping†
assumed, damage may occur and reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please NGD8201BNT4G DPAK 2500/Tape & Reel
download the ON Semiconductor Soldering and Mounting Techniques (Pb−Free)
Reference Manual, SOLDERRM/D.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

© Semiconductor Components Industries, LLC, 2015 1 Publication Order Number:

January, 2015 − Rev. 3 NGD8201B/D
 NGD8201B

UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ TJ ≤ 175°C)

Characteristic Symbol Value Unit
Single Pulse Collector−to−Emitter Avalanche Energy EAS mJ
VCC = 50 V, VGE = 5.0 V, Pk IL = 22 A, L = 1.8 mH, Starting TJ = 25°C 435
VCC = 50 V, VGE = 5.0 V, Pk IL = 17 A, L = 3.0 mH, Starting TJ = 25°C 433
VCC = 50 V, VGE = 5.0 V, Pk IL = 19 A, L = 1.8 mH, Starting TJ = 125°C 325
Reverse Avalanche Energy EAS(R) mJ
VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C 2000
THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Case RθJC 1.3 °C/W
Thermal Resistance, Junction to Ambient DPAK (Note 1) RθJA 95 °C/W
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds TL 275 °C
1. When surface mounted to an FR4 board using the minimum recommended pad size.

ELECTRICAL CHARACTERISTICS
Characteristic Symbol Test Conditions Temperature Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Clamp Voltage BVCES TJ = −40°C to 380 395 420 VDC
IC = 2.0 mA
150°C
TJ = −40°C to 390 405 430
IC = 10 mA
150°C

Zero Gate Voltage Collector Current ICES TJ = 25°C − 1.5 5 mADC

VCE = 350 V,
TJ = 150°C − 10 30*
VGE = 0 V
TJ = −40°C − 0.5 2.5
VCE = 15 V, TJ = 25°C − − 2.0
VGE = 0 V

Reverse Collector−Emitter Leakage Current IECS TJ = 25°C − 0.7 1.0 mA

VCE = −24 V TJ = 150°C − 12 25*
TJ = −40°C − 0.1 1.0
Reverse Collector−Emitter Clamp Voltage BVCES(R) TJ = 25°C 27 33 37 VDC
IC = −75 mA TJ = 150°C 30 36 40
TJ = −40°C 25 32 35
Gate−Emitter Clamp Voltage BVGES TJ = −40°C to 11 13 15 VDC
IG = 5.0 mA
150°C
Gate−Emitter Leakage Current IGES TJ = −40°C to 384 640 700 mADC
VGE = 10 V
150°C
Gate Resistor RG TJ = −40°C to − 70 − Ω
−
150°C
Gate Emitter Resistor (Note 3) RGE TJ = −40°C to 10 16 26 kΩ
−
150°C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*Maximum Value of Characteristic across Temperature Range.

www.onsemi.com
2
 NGD8201B

ELECTRICAL CHARACTERISTICS (continued)

Characteristic Symbol Test Conditions Temperature Min Typ Max Unit
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage VGE(th) TJ = 25°C 1.2 1.5 1.8 VDC
IC = 1.0 mA,
TJ = 150°C 0.8 1.0 1.3
VGE = VCE
TJ = −40°C 1.4 1.7 2.0*
Threshold Temperature Coefficient − − − − 3.4 − mV/°C
(Negative)

Collector−to−Emitter On−Voltage VCE(on) TJ = 25°C 1.0 1.2 1.5 VDC

IC = 6.0 A,
TJ = 150°C 1.0 1.2 1.5
VGE = 4.0 V
TJ = −40°C 1.0 1.2 1.5*
TJ = 25°C 1.2 1.4 1.6*
IC = 8.0 A,
TJ = 150°C 1.2 1.4 1.6
VGE = 4.0 V
TJ = −40°C 1.2 1.4 1.6*
TJ = 25°C 1.3 1.5 1.8
IC = 10 A,
TJ = 150°C 1.3 1.5 1.9
VGE = 4.0 V
TJ = −40°C 1.3 1.6 1.8*
TJ = 25°C 1.7 1.9 2.3
IC = 15 A,
TJ = 150°C 1.9 2.2 2.5*
VGE = 4.0 V
TJ = −40°C 1.5 1.9 2.3
TJ = 25°C 1.3 1.5 1.8*
IC = 10 A,
TJ = 150°C 1.3 1.5 1.8*
VGE = 4.5 V
TJ = −40°C 1.3 1.5 1.8*
IC = 6.5 A, TJ = 25°C − − 1.65
VGE = 3.7 V
Forward Transconductance gfs VCE = 5.0 V, IC = 6.0 A TJ = −40°C to 8.0 14 25 Mhos
150°C
DYNAMIC CHARACTERISTICS (Note 3)
Input Capacitance CISS 400 800 1000 pF
VCC = 25 V, VGE = 0 V TJ = −40°C to
Output Capacitance COSS 50 75 100
f = 1.0 MHz 150°C
Transfer Capacitance CRSS 4.0 7.0 10
SWITCHING CHARACTERISTICS (Note 3)
Turn−Off Delay Time (Resistive) td(off) VCC = 300 V, IC = 6.5 A TJ = 25°C − 4.0 10 mSec
RG = 1.0 kΩ, RL = 46 Ω,
Fall Time (Resistive) tf VCC = 300 V, IC = 6.5 A TJ = 25°C − 9.0 15
RG = 1.0 kΩ, RL = 46 Ω,
Turn−On Delay Time td(on) VCC = 10 V, IC = 6.5 A TJ = 25°C − 0.7 4.0 mSec
RG = 1.0 kΩ, RL = 1.5 Ω
Rise Time tr VCC = 10 V, IC = 6.5 A TJ = 25°C − 4.5 7.0
RG = 1.0 kΩ, RL = 1.5 Ω
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*Maximum Value of Characteristic across Temperature Range.
2. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
3. Not production tested.

www.onsemi.com
3
 NGD8201B

TYPICAL ELECTRICAL CHARACTERISTICS

100 60

ICE, COLLECTOR−EMITTER CURRENT (A)

VCE = 10 V

25°C 50
−40°C
CURRENT (A)

40 25°C
150°C
10 30
150°C
20

10

1 0
1 10 1 2 3 4 5
INDUCTANCE (mH) VGE, GATE TO EMITTER VOLTAGE (V)
Figure 1. Maximum Single Pulse Switch Off Figure 2. Transfer Characteristics
Current vs. Inductance

60 60
ICE, COLLECTOR−EMITTER CURRENT (A)

VGE = 10 V ICE, COLLECTOR−EMITTER CURRENT (A) VGE = 10 V

6V
50 50
6V
40 5V 40

4.5 V 5V
30 30
4.5 V
4V
20 20 4V
3.5 V 3.5 V
10 3V 10 3V

2.5 V 2.5 V
0 0
0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10
VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V)

Figure 3. Output Characteristics, TJ = 255C Figure 4. On−Region Characteristics,

TJ = 1505C

60
ICE, COLLECTOR−EMITTER CURRENT (A)

VGE = 10 V 6V
50 5V

4.5 V
40

4V
30
3.5 V
20
3V
10
2.5 V

0
0 1 2 3 4 5 6 7 8 9 10
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. On−Region Characteristics,
TJ = −405C

www.onsemi.com
4
 NGD8201B

R(t), TRANSIENT THERMAL RESISTANCE (°C/Watt) 1000

100 Duty Cycle = 0.5

0.2
0.1
10
0.05

0.02
0.01
1

0.1
D CURVES APPLY FOR POWER
Single Pulse P(pk)
PULSE TRAIN SHOWN
t1 READ TIME AT t1
0.01
t2 TJ(pk) − TA = P(pk) RqJA(t)
RqJC X R(t) for t ≤ 0.2 s
DUTY CYCLE, D = t1/t2

0.001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t,TIME (S)
Figure 6. Transient Thermal Resistance (Non−normalized Junction−to−Ambient mounted on minimum pad area)

www.onsemi.com
5
 NGD8201B

PACKAGE DIMENSIONS

DPAK
CASE 369C
ISSUE E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
A Y14.5M, 1994.
E C 2. CONTROLLING DIMENSION: INCHES.
A 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
b3 MENSIONS b3, L3 and Z.
B c2 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
4 NOT EXCEED 0.006 INCHES PER SIDE.
L3 Z Z 5. DIMENSIONS D AND E ARE DETERMINED AT THE
D OUTERMOST EXTREMES OF THE PLASTIC BODY.
DETAIL A H 6. DATUMS A AND B ARE DETERMINED AT DATUM
1 2 3 PLANE H.
7. OPTIONAL MOLD FEATURE.

L4 INCHES MILLIMETERS
NOTE 7
DIM MIN MAX MIN MAX
b2 c BOTTOM VIEW BOTTOM VIEW A 0.086 0.094 2.18 2.38
e ALTERNATE
SIDE VIEW CONSTRUCTION
A1 0.000 0.005 0.00 0.13
b b 0.025 0.035 0.63 0.89
0.005 (0.13) C b2 0.028 0.045 0.72 1.14
TOP VIEW
M H
b3 0.180 0.215 4.57 5.46
c 0.018 0.024 0.46 0.61
GAUGE SEATING c2 0.018 0.024 0.46 0.61
L2 PLANE C PLANE D 0.235 0.245 5.97 6.22
E 0.250 0.265 6.35 6.73
e 0.090 BSC 2.29 BSC
L H 0.370 0.410 9.40 10.41
A1 L 0.055 0.070 1.40 1.78
L1 L1 0.114 REF 2.90 REF
DETAIL A L2 0.020 BSC 0.51 BSC
ROTATED 905 CW L3 0.035 0.050 0.89 1.27
L4 −−− 0.040 −−− 1.01
Z 0.155 −−− 3.93 −−−
STYLE 7:
SOLDERING FOOTPRINT* PIN 1. GATE
2. COLLECTOR
3. EMITTER
6.20 3.00 4. COLLECTOR
0.244 0.118
2.58
0.102

5.80 1.60 6.17

0.228 0.063 0.243

SCALE 3:1 ǒinches

mm Ǔ

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com
Literature Distribution Center for ON Semiconductor USA/Canada
P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local
Email: [email protected] Phone: 81−3−5817−1050 Sales Representative

www.onsemi.com NGD8201B/D
6