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Edc

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Srikanth Kallem
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a4 Q2 Q3 Multiple Choice Questions Consider two energy levels: £,, E ev above the Fermi level and €,, EeV below tlie Fermi level. P, and P, are respectively the probabilities of E, being occupied by an electron and E,being empty. Then (a) P,>P, (b) P, = (© P, ‘carrier is NOT proportional 10 Workbook rb 5 4. Donor level ionization increases as E, (donor energy level) moves towards the Conduction band at a given temperature Which of these staternent(s) is/are correct? (@) 1 only tb) 2only (©) 2and4 (d) 3only [ESE-2003] Consider the following statements for an n-type semiconductor 1. Eclies below E, at aroom temperature (7) 2. Eplies above E,asT +0 3. E_= E,atsome intermediate temperature 4. E;is invariant with temperature Where E,is Fermi energy and E.'s donor level energy Which of these statements is/are correct” (@) 1and2 () 2and3 (©) 4oniy () 1,2and3 [ESE-2003] a2 0.13 Assume n, = 1.45 x 10%/em? for silicon. In an n-type silicon sample, the donor concentration at 300 K is 5 x 10"/crn? and corresponds 10 + impunty atom for 10° silicon ators. The electron ‘and hole concentrations in the sample will be (a) n=5x 10'/om? p=42« 10m? (0) n< 5x 10"/om? and p> 42x 08cm? (c) n>5x 10"em? and p< 42 10%/om? (a) n< 5x 10"fem?® and p< 4.2 x 10%/em? (ESE-2003] The resistivity at room temperature of intrinsic silicon is 2:3 x 10° Gm and that of an n-type extrinsic silicon sample is 8.33 x 10” Om. ‘bar of this extrinsic silicon 50 x 100. mm and a steady current of 1 HA exists in the bar The voltage across the bar is found to be 50 mv. Ifthe same bar is of intrinsic silicon, the voltage across the bar will be about (a) 1400 () 140 ( 14V () 14. (ESE-2003] aia concentration in a sample of non slicon at 300 K varies Ot06 x 10"¢/cm* at that electrons are Q.15 The electron doped n-type tinearly from 10"/orn? atx = Tarmuared vomom ay now wa) Kus w Pes v= 2pm. Assume a ‘supplied to keep this geet charge | constant with time. i electronic 6 | Electronics Engineering @ Electronic 16x 10" Coulomb and the diffusion constant D, = 350m*/s, the current density in the silicon, if ho electric field is present, is (@) zero (b) -1120 Aicm? (@) -560Acm? (a) +1120Aem? [GATE-2003] A Silicon sample A is doped with 40" atoms/cm? of Boron. Another sample B of identical dimensions is doped with 10° atoms/cm? of Phosphorus. The ratio of electron to hole mobility is 3, The ratio of conductivity of the sample A to Bis (@) 3 () 118 (b) 23 (d) 32 [GATE-2005] Q.17 Match List-I (Type of Conductor) with List-t (Position of Fermi Level) and select the correct answer using the codes given below the lists: 16 List-I A. n-type semiconductor B. p-type semiconductor C. Intrinsic semiconductor D. Degenerate n-type semiconductor List! 1, Middle of band gap 2. Above conduction band 3. Near but below conduction band 4, Near but above valence band Codes sce) @123 4 3 412 fi icuaurseee) @3 21 4 [ESE-2005] Q.18 Aheavily doped n-typed semiconductor has the following data Hole-electron mobility ratio : 0.4 Doping concentration : 4.2 x 108 atoms/m? Intrinsic concentration : 1.5 x 10* atoms/m? The ratio of conductance of the n-type semiconductor to that of the intrinsic ‘semiconductor of same material and at the same temperature is given by Devices and Circuits MADE ——= ERsy Q.19 The electron and hole concentra respectively obey the relation np isthe hires conor denaty, is valid for which of the following (a) Forall semiconductors unde ay (b) (e) For non-degenerate second thermal equilibrium condition For degenerate semiconduc excess electrons and holes (d) [ESE-2007 Q.20 The drift velocity of electrons in s with applied electric field in which ways? (a) It monotonically increases with ncreasny field (6) It first increases linearly, then sub ines increases and finally attains saturation wn increasing field (©) Itfirst increases. then decreases snow a negative differential region, agar increases and finally saturates (d) The drift velocity remains unchanged wr increase in field [ESE-2007) Q.21 Inahomogeneously doped n-type semicanduca™ bar, holes are injected at one end of the ba: Hoe will the holes flow to the other end? (a) By drift mechanism only | (b) By diffusion mechanism only (c) By combination of drift and diffuse” mechanisms (d) By recombination mechanism [Ese-20071 Q.22 Under high electric fields, in a SC with increas? electric field 1. The mobility of charge carriers decrease 2. The mobility of charge carriers! 3. The velocity of charge carriers $2 4. The velocity of charge carriers increase® (a) 1,2and3 are correct ir 79 peanpoide) 8q few wood si jo ued ON WEG MON SUOTESIGNg ASYS OVNI TeneW joelanS WOHABED @ turates 3 ‘ 5 3 (a) 0.00005 (b) 2,000 (b) 1 and 3 are correct (c) 10,000 (d) 20,000 (c) 1,2and 4 are correct [GATE-2006] (d) 2,3and 4 are correct MADE EASY Publications 0.23 A ‘hole’ in a semiconductor hy 1. Positive charge equal tothe lection charge effective mass of electron a 4, Negative mass and positive charge qua to the charge in nuctous " (@) 1,2,3and4 (by t and 3 ony (e) 2and4only — (4) Sanda only ; [ESE-2011) Q.24 Consider the following statements with regara to semiconductors, 1, Intype material tree electron concentration is nearly equal to density of donor atoms 2. 1 part in 10" donor type impurity added to Ge improves its conductivity at 30°C by a factor 12 Phosphorus is an example of n type impurity 4, Conductivity of Si is more sensitive to temperature than Ge, Which of these statements are correct? {a) 1,2and3only (b) 1,3and4only (@) Zand4only — (d) 1,2, 3and4 [ESE-2011] .25 Consider a semiconductor carrying current and Placed in a transverse magnetic field B, as shown below. The measured potential across 1 and 2 surfaces is positive at 2. What is the type of materia? 2 , ¥ 1 (@) Intrinsic Si material (b) n-type semiconductor material (©) p-type semiconductor material (@) no such conclusion can be drawn [ESE-2011) 2.26 Drift current in semiconductors depends upon (@) only the electric field (b) only the carrier concentration gradient (©) both the electric field and the - (@) both the electric field and the cari eet ‘Woresnulied uenum sui noun ua) Aus ui posi Jo peanpoide! eq feu yooa sii jo Ved oN Weg won SunIeSVard leva SGvH sen Or Workbook 2 ———__ Workbook Q.27 Given ME) Density of states AE) Probability that a quantum state with energy E is occupied by an electron, E. + Energy level of conduction band The expression ° N(E\KE)E gives (2) minimum numberof electrons in conduction band (b) concentration of electrons in conduction band (6) energy of electron concentration in conduction band (0) conductivity of electrons in conduction band [ESE-2012] Q.28 A heavily doped semiconductor has (a) aresistivity which decreases exponentially with temperature (b) a resistivity which rises almost linearly with temperature (c) a negative temperature coefficient of resistance (4) @ positive temperature coefficient of resistance [ESE-2013] Q.29 A silicon bar is doped with donor impurities Np = 2.25 x 108 atoms/em?. Given the intrinsic carrier concentration of silicon at T= 300 K is n,= 1.510" cm. Assuming complete purity ionization, the equilibrium electron and hole concentrations are (@) ry = 15x 10" on, p, = 15 x 10 om? (b) n, = 1.5 10" cnr, p, = 1.5 x 108 ene (©) rg = 225x 10° on, p= 15x 10% cnr? (0) ny = 2.25 x 10'S om, p, = 1 x 108 om? [GATE-2014} Q.30 A thin P-type silicon sample is unifurmly illuminated with light which generates excess carriers. The recombination rate is directly proportional to {@) the minority carrier mobility (0) the minority carrier recombination lifetime (©) the majority carrier concentration (d) the excess minority carrier concentration [GATE-2014) ic Devices and Circuits MADE Eng, | 8 | Electronics Engineering * Electroni . @.31 At T=300K, the band gap and the inns carrier concentration of GaAs are 1.42 eV ar 10° cnr, respectively. In order to generate electron hole pairs in GaAs, which ono of the wavelength (2.,) anges of incident radiation, most suitable? (Given that: Plank’s constant is 6.62 x10-J-s, velocity of lightis 3 x10" crs and charge of electronis 1.6 x 10"'? C) (a) 0.42 um <2_< 0.87 Bm (0) 0.87 pm <2, <1.42 pm (0) 1.42 um hon (b) nv/AzE, {c) hve, (a) 1/2hvsE, (Ihe symbols have usual meanings) mADE EASY Numerical Dat = aT Questions | ase C @ semiconductor har of an electron concentratior oe cal iN profile i s described = 24m ithe ba isin equilibrium, t pee a lecticfleld at ie — kV/m. (Assume V, = 26 mv). | Q.39 A piece of silicon is doped uniformh phosphorous with a doping concentration of 10"/err®. The expected value of mobility ver doping versus 7 an Joping concentration for assuming full dopant ionization is harge of an electron is 1.6 he 10 (in Scr) of the silicon same 1C. The conductivity eat 300 K is Hole and Electron Moby in Stan at 300K t > i 3 Workbook 9 + ete) a f oo1n (d) 22 10 [GATE-2015] Q.41 The longest wavelength that can be absorbed by silicon, which nas the bandgap uf 1.12 eV is 1.1m. If the longest wavelength that can be absorbed by another material is 0.87 um, then the band gap of this material is _ eV. Q.42 For a sample of GaAs scattering time is te= 10" sec. and effective mass of is 0.076 cm. Ht an electric field of 100 kV/cm is applied, the drift velocity produced is ___ x 10° omisec Q.43 N-type silicon sample contain a donar conc of A/cm. The minority carrier hole life time \Ousec. The life time af the majority carrier s x 10° sec jeer pene LE +15 116 LEFIT Verte 1E+I9 1620 Doping Concentration cm) [GATE-2015] @.40 The energy band diagram and the electron | § density profile r(x) in a semiconductor are shown | = in the figures Assume that rta)= 108%" Jon, with | = 0.1 Viom and x expressed in cm. Given | o_«r \§ #7 _ 026 v, D,= 360m? s", NG = "gS q , Poe The electron current density (im Acm” at x= 0 is (Assume n, = 1.5 x 10°2/em?) Ina p-type semiconductor, if the concentration of acceptor atoms is increased by a factor of 40, The shif in the position of Ferm! ieve! ‘Assume KT = 0.03 eV. @.45 A sample of Si at T= 300° K of length 2.5 cm ‘and cross sectional area of 2 mm? is doped with 1017 cm of phosphorous and 9x 10'Scrr> ‘of boron. The resistance of the sample is _ 2 (Assume p, = 200 or?/V-sec, = 800.om/V-see) Q.46 A sample of n-type Si has electron density of 6.25 x 10"%/cm? at 300 K. If the intrinsic ‘concentration of the charge in the sample 2.5 x 10'%/em?, The hole concentration 's ___ 10%/em? 10 Hlectionics Engineering # Hleetranie Devie Q.47 The Fermilevelol n ype german bar (80 2eV above the inttinsic Ferny level, the conductivity of {he bar. ifn, = 1.1 10" erry, HON eres and 1, = 1200 om'/V-see in __ (User) Q.48 Consider a rectangular semiconductor specimen Of 4 mm width, 2 mm thick with a Hall eceficlent 10% m/C, when current at 1mA is passed through the sample a Hall voltage of 2 mV is oblained. Then the magnolic field in the specimen is __ Webe/in’ Q.49 An mype silicon sample is uniformly illuminated with light which generates. 10" electron-hole pairs per cm? per secand. The minority carrier Metime in the sample is 1 ps. In the steady state, the hole concentration in the sample is approximately 10°, where x is an integer The value of x is [GATE-2015} Q.50 Pure silicon has an electrical resistivity of 3000 Qm. If tho free carrier density in it is 1,1 x 10° mv and the electron mobility is three times that of hole mobility, calculate the mobility values of electrons and holes. (ESE-2003) The mobilities of electron and hole in silicon sample are 0.125 m®/V-8 and 0.048 m"V-s respectively, Determine the conductivity of intrinsic silicon at 27°C, if the intrinsic carrier concentration is 1.6 x 10" atoms/m!. When itis doped with 10°" phosphorus atoms/m!, determine the equilibrium hole concentration, conductivity and position of the Fermi level relative to the intrinsic level. [ESE-2009} An n-type Ge sample is 2 mm wide and 0.2 mm thick. A current of 10 mA is passed through the sample (x-direction) and a magnetic field of 0.1 Weber/m? is directod perpendicular to the current flow (z-direction). The developed Hall voltage is ~1.0 mV. Calculate the Hall coefficient and electron concentration (ESE-2011) A sample of Ge is doped to the extent of 104 donor atoms/om! and 5 x 10" acceptor atoms/cm. At 300 K, the resistivity of intrinsic Ge is 60 Q-cm. If the applied electric field i 2 Viom, Find the total conduction current density. Assume 7, = 2.5 x10" atoma/em’ and p/h, = 12 ast as2 as3 FL ee nL LL LL LLL and Circuits concentration p(x) = 10° where L,, (hole diffusion length) = and electron concentration n(x) = 6 x 10" e892 Where (, (Electron diftusion length) = 96, 19 The total current density at x = 0 will be Assume D, = 20 cm*/s, D, = 35 om?/s, 150 ‘om Q.65 A small concentration of minority carrer sr injected into homogeneous semicondyctr, crystal at one point and an electric fieig 10 V/cm is applied across the crystal such thay the minority carrier in semiconductor crystal wi be moving at a distance of 1 cm in 20 psec Calculate the mobility. Q.86 Ina semiconductor Ge is doped donor impurties to the extend of 1 : 107 donor impurity. Calculate: (Donor concentration Gi) Electron and hole concentration in the doped semiconductor (iii) Conductivity and resistivity of the doped semiconductor. (iv) How many time the conductivity is increased in the semiconductor because of doping? Consider total number of atom 4.421 «10%, 1, = 8800 cm?/V-sec, y,, = 1800 om?/V-sec and n= 2.5 x10" fom? In a Semiconductor at room temperature Ine intrinsic concentration and intrinsic resistivity 1.5 x 10" jm and 2 x 10° Q-m andis converted into extrinsic semiconductor with a doping concentration 102/m3. For the extrinsic ‘semiconductor. Calculate: (i) Minority carrier concentration (ii) Electron mobility (ii) Resistivity of doped semiconductor (wv) Minority carrier concentration when Ihe temperature is increased oa valve at wi" the intrinsic concentration is double. Assume the mobility of charge for major carriers is equal to the mobility of charg® minor cartons, Q.s7 MADE Ensy QB A Si semiconductor ig impurities which resuite j n= Gx. And n>sn, A isolated. Find the build function of x Aso doped with donor In doping profile as Sample is placed in electric field as a Calculated the field at ¥ = 1 um atroom twinperature Q.59 A semiconductor of the following parameter. Hy= 7800 om?NV-sec ; y, = 300 om?N.see 9, = 3.6 x 10'2/om3 Find: () Minimum conductivity, (Hi) Hole and electron concentration when Conductivity is minimum, (iti) Derive the equation for min mum conductivity for semiconductor. Q.60 A doped semiconductor specimen has Hall Coefficient 3.6 x10 mC and resistivity of 910° 2-m. Assume single carrier conduction, what will be the mobility and density of carrier inthe specimen Q.61 Consider a region of silicon devoid of electrons and holes, with an ionized donor density of Nj =10'%cm™. The electric field at x = 0 is O V/cm and the electric field atx = Lis 50 kV/cm inthe positive x direction. Assume that the electric field is zero in the yand z directions at all points. 20 rey 1.6x10-"® coulomb, €9=8.85 x 10-4 Flom, €,= 11.7 forsilicon, the value of L in nm is IGATE-2016] Try Yourself 1. The electron concentration in n type GaAs is given by nao"(1-£] where L= 10 wm. The’electron diffusion jem’? for Osx, js paonpordei oq Feu wooa 5 TWolssiuved veniam ai noun wo) Aue wr po aT) Work 11 Coefficient is 10 cm/sec. What wi be the electron difusion current density atx = 2m? (Ans: 64 Alm] Derive an expression relating the intrincic level E,to the center of the band gap E,/2. Calculate the displacement of &; from E,/2 for Si at 300 k assuming the effective mass values for electrons and holes are 1.1 m, and 0.56 m, respectively [Ans: -0. 013 eV) ALT = 300K, the probability of an energy state being empty is given as 0.9258. Then find the energy state interms of E,. kT? (@) Ee-252kT (0) E+ 252kT (©) E,-0.065kT —(d) E+ 0.065 kT [Ans: (b)] Consider a sample of silicon at T= 300 K ‘Assume that the electron concentration (n) varies with distance (x) as shown below antl. : 0.010 em) The diffusion current density is found to be J, = 0.09 Alom?, If the electron diffusion Coefficient is D, = 25 cm*/s, then electron x10" om [Ans: 1.75] concentration atx = Ois Two semiconductors A and B have the same density of states and effective masses. ‘Semiconductor A has a bandgap eneray of 1.21 eV and semiconductor B has a bandgap energy of 2.4 eV. The ratio of intrinsic carrier concentration of semiconductor B to semiconductor A at T = 300 K will be (Assume AT = 0.026 eV) (@) 8683x10 — (b) 1.413 10% (©) 1.152x10- — (d) 7.08 10-3" [Ans: (c)]

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