PROBLEM 1

Fig.1 shows a semiconductor bar with 𝑳 = 𝟏𝟎𝟎𝝁𝒎. A positive voltage V=2V is applied at terminal A across an intrinsic Si
semiconductor and terminal B is grounded. The energy band diagram with no external voltage applied is also shown in the
figure.
a) With the help of appropriate diagram and proper calculations, show the effect of the external voltage on the energy band
diagram. Sketch the resultant energy band diagram.
b) Explain the generation of electron and hole within the semiconductor in using energy band diagram at T=0K and T=300K.
c) Explain the generation of electron and hole within the semiconductor in using energy band diagram if an electron in VB is
photo-excited by photon with energy ℎ𝜈 = 1𝑒𝑉 𝑎𝑛𝑑 ℎ𝜈 = 2 𝑒𝑉.
d) Explain the conduction of electron and hole within the semiconductor in using energy band diagram.

Notes:
- Show the directions of the motion of electron and hole, the directions of corresponding currents.
- All the diagram must be properly labeled.
- All the values required must be properly calculated.
- For answering 2-4, use the energy band diagram obtained in 1.
- Parameters to be used are linked to your section number (S) and group number (G).
 𝑩 𝑨
V=(2+0.SG)V
𝑳
𝒙 = 𝟎𝝁𝒎 𝒙 = 𝑳 = 𝟏𝟎𝟎𝝁𝒎

𝑬𝑪 + 𝟐. 𝟑 + 𝟎. 𝑮𝑺 𝒆𝑽

𝑬𝑪

𝑬𝑭𝒊 𝑬𝒈 = 𝟏. 𝟏 + 𝟎. 𝟎𝑮 𝒆𝑽

𝑬𝑽 = 𝟐. 𝟐 𝒆𝑽

𝐹𝑖𝑔. 1

𝑬𝟎 = 𝟎𝒆𝑽
𝒙 = 𝟎𝝁𝒎 Fig. 1 𝒙 = 𝑳 = 𝟏𝟎𝟎𝝁𝒎
 PROBLEM 2
The fermi level, 𝐸𝐹 , of a semiconductor sample is located 0.4 eV above the middle of the band gap, 𝐸𝑚𝑖𝑑𝑔𝑎𝑝 . At T=300K, 𝑁𝐶 =
2.55 + 0. 𝐺𝑆 × 1019 𝑐𝑚−3 𝑎𝑛𝑑 𝑁𝑉 = 1.00 + 0. 𝐺𝑆 × 1019 𝑐𝑚−3 and 𝐸𝑔 = 1.42𝑒𝑉
a) Determine thermal equilibrium electron concentration.
b) Determine thermal equilibrium hole concentration.
c) Calculate the product 𝑛0 𝑝0and verify laws of mass action.
d) What types of semiconductor it is: N-type or P-type? Determine impurity concentration: 𝑁𝑑 𝑜𝑟 𝑁𝑎 .
e) Obtain the concentration of carriers: 𝑛0 𝑎𝑛𝑑 𝑝0using other alternative methods.
f) Repeat question a and b for T=280K, 350K. Identify the changes of the following with respect to the values obtained in question 1
𝑁𝐶 , 𝑁𝑉 , 𝑘𝑇, 𝐸𝐹 , 𝐸𝐹𝑖 , 𝐸𝑚𝑖𝑑𝑔𝑎𝑝 , 𝑛0 , 𝑝0
g) Determine impurity concentration 𝑁𝑑 𝑜𝑟 𝑁𝑎 need to be added so that the fermi level, 𝐸𝐹 , is relocated 0.65 eV below the middle of
the band gap, 𝐸𝑚𝑖𝑑𝑔𝑎𝑝 . Determine 𝑛0 𝑎𝑛𝑑 𝑝0
h) Calculate the position of 𝐸𝐹 with respect to 𝐸𝐹𝑖 , 𝐸𝐶 𝑎𝑛𝑑 𝐸𝑉 in all the above cases.
PROBLEM 3
Assume the yellow and green boxes are two bands of a semiconductor,
If it’s intrinsic:
a) show position of Ef.
b) Position of electron and hole (in CB/VB?)
c) relation between electron and hole.
d) T>0k what happens to electrons if Energy is <Eg, >Eg.
e) Number of states in CB and VB.
f) Number of free electrons in CB and VB at T=0K
g) If Eg is smaller, the for T>0K ni would increase/decrease?
If its n type
h) Draw Ef, Efi, Ed (continuous or discontinuous, why)
i) If n0 increases, Ef will go where? above or below.
j) If n0 increases, p0 will decrease or increase?

k) If Ef uniform what does it mean.

l) Ef tilted what does it mean.
 a) Write g(E) and f(E) for CB and VB
PROBLEM 4 b) g(E) at Eg.
c) What is XX in f(E)
𝒎𝒆 𝟑 𝟐
d) f(E) at Ef
𝒈 𝑬 = 𝟖𝝅 𝟐 𝟐 𝑬
𝒉 e) What is the significance of [1-f(E)]
f) Shape of g(E)f(E)
g) Shape of g(E)[1-f(E)]
h) Which shape is bigger for p type.
𝟏 − 𝑬𝑭 − 𝑬𝑽 i) Fill the missing part/partss of each
𝒇 𝑬 = 𝑬−𝑿𝑿 𝒑𝟎 =∗∗ 𝒆𝒙𝒑
𝒌𝑻 equation to the left
𝟏+ 𝒆 𝑲𝑻

− 𝟐𝝅𝒎∗𝒑 𝒌𝑻
𝟑 𝟐
𝒏𝟎 = 𝑵𝑪 𝒆𝒙𝒑 𝑵𝑽 = 𝟐
𝒌𝑻 𝒉𝟐

− 𝑬𝑪 − 𝑬𝑽
𝒏𝟎 𝒑𝟎 = 𝒏𝟐𝒊 = 𝑵𝑪 𝑵𝑪 𝒆𝒙𝒑
𝒌𝑻
 PROBLEM 5
- Identify if there is anything missing in the equation.
𝑬𝑭 − 𝑬𝑭𝒊 - Correct if the equations appear to be wrong.
𝒏𝟎 = 𝒏𝒊 𝒆𝒙𝒑
𝒌𝑻
𝑬𝑭 − 𝑬𝑭𝒊
𝒑𝟎 = 𝒏𝒊 𝒆𝒙𝒑
𝒌𝑻
 𝒏𝟎 + 𝑵− +
𝒂 = 𝒑𝟎 + 𝑵𝒅 Check if the diagram is correct or not.
If not, make necessary correction(s).
𝒏𝟎

𝐸𝑔

+ + + + + +
+ +

𝐸𝐹𝑖 𝒏𝒅
𝑵+
𝒅 = 𝑵𝒅 − 𝒏𝒅

𝒑𝒂 𝑵−
𝒂 = 𝑵𝒂 − 𝒑𝒂

- - - - - - - - -

𝒑𝟎
 - Identify if there is anything missing in the equation.
- Correct if the equations appear to be wrong.
− 𝑬𝑭 − 𝑬𝑽
𝒑𝟎 = 𝑵𝑽 𝒆𝒙𝒑
𝒌𝑻
− 𝑬𝑪 − 𝑬𝑭
𝒏𝟎 = 𝑵𝑪 𝒆𝒙𝒑
𝒌𝑻
𝑵𝑽
𝑬𝑭 − 𝑬𝑽 = 𝒌𝑻𝒍𝒏
𝒑𝟎
𝑵𝑪
𝑬𝑪 − 𝑬𝑭 = 𝒌𝑻𝒍𝒏
𝒏𝟎

𝑬𝑭𝒊 − 𝑬𝑭
𝒑𝟎 = 𝒏𝒊 𝒆𝒙𝒑
𝒌𝑻
𝒑𝟎
𝑬𝑭𝒊 − 𝑬𝑭 = 𝒌𝑻𝒍𝒏
𝒏𝒊
 PROBLEM 6
Q1: This is a very common graph that you have seen in this course. Can you label x and y axes?
Q2: There are three plots here marked in three colors blue, green and violet. What’s the relation of the
temperatures of these 3 plots?
Q3: Can you explain why blue graph has perfectly rectangular shape while other two do not?
Q4: Why do you think fermi probability function depends on the temperature?
Q5: If you are asked to find the probability of finding holes at different energy levels from this graph, what
would be your approach?
Q6: If you are asked to plot f(E) vs E graph for a different temperature experimentally, what would be your
experimental setup?
 PROBLEM 7

Q1: How can we determine the intrinsic carrier

concentration of a semiconductor material, given that Ec
and Ef are unknown.
Q2: What adjustments should be made if temperature is
increased?
Q3: Explain complete ionization and freeze out.
Q4: ‘An extrinsic semiconductor can behave like an
intrinsic semiconductor under certain conditions’ – do you
agree?
Q5: If yes, explain why?
Q6: Under what conditions Efi = Emidgap?
 PROBLEM 8

A hypothetical semiconductor has a band gap energy Eg=(1.1+0.0S) eV. The values
of Nc and Nv at T=300K are (4.00+0.SG)×10^19 /cm3 and (3.08+0.SG)×10^19 /cm3, respectively.

i. Determine ni at T=300k and T=(300+SG)k Respectively.

ii. If the semiconductor is doped with Nd=2×10^17donors/cm3, calculate the equilibrium electron and hole
concentrations at T=(300+SG)k.

iii. Sketch the energy band diagram showing the position of the Ef ,Efi at T=(300+SG)k. (your sketch could be an
estimation of your judgment, but all the values regarding the positions Ec−Ef,Ef−Ev,Ef−Efi,Efi−Emidgap must be
accurate).

iv. Determine the concentration of acceptor impurity, Na, atoms that must be added so that the semiconductor is still
n-type and the Fermi level is 0.35eV below the conduction band at T=400K.
SG: Linked to Problem 1
 PROBLEM 9

Consider the energy levels shown in Figure. Let T = 300 K.

(a) If (E1 – EF) =0.30 eV, determine the probability that an energy
state at E = E1 is occupied by an electron and the probability that an energy state at E= E2 is empty.
(b) Repeat part (a) if (EF -E2)= 0.40 eV.
(c) When the process described here can be defined as generation? What should be done to have recombination process?
Explain the change in probability during generation and recombination.