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Cse Labreport-3

The document summarizes an experiment on the input-output characteristics of a common emitter BJT configuration. It includes the objective, theory, experimental method, data collection table, and analysis. The experiment measured the base-emitter voltage (VBE) and base resistor voltage (VRB) for different values of collector-emitter voltage (VCE) and base current (IB). A graph of IB vs VBE showed the input characteristics for different VCE values. The results closely matched but had some minor differences from theoretical values. The experiment provided an understanding of how BJTs work in common emitter configuration.

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SR Nibir
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74 views5 pages

Cse Labreport-3

The document summarizes an experiment on the input-output characteristics of a common emitter BJT configuration. It includes the objective, theory, experimental method, data collection table, and analysis. The experiment measured the base-emitter voltage (VBE) and base resistor voltage (VRB) for different values of collector-emitter voltage (VCE) and base current (IB). A graph of IB vs VBE showed the input characteristics for different VCE values. The results closely matched but had some minor differences from theoretical values. The experiment provided an understanding of how BJTs work in common emitter configuration.

Uploaded by

SR Nibir
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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East West University

Department of CSE
LAB REPORT

Course Name
Electronic Circuit

Course Code
CSE251

Experiment no: 03

Experiment name:
The input-output characteristics of
CE (Common Emitter) configuration of BJT

Semester and Year:


Spring 2023

Name of Student & Id: Course Instructor information:

MD. Sakibur Rahman Dr. Shekh Md Mahmudul Islam


(2021-3-60-057) Assistant Professor
Department of Department of
Computer Science and Engineering Electrical and Electronics Engineering

Date of Report Submission


ABSTRACT

From the experiment, we know how a common emitter config works of BJT. As we saw, the relation
between Voltage and current in a BJT, therefore we know how BJT works on common emitter. With the
knowledge of this experiment, we will be able to draw the input output characteristics and also we can
determine the common emitter config of BJT.

OBJECTIVE

• Have a working understanding of circuit variables and circuit components.


• Be familiar with BJT and how to determine CE junction current.
• Learn about BJT.

THEORY AND EXPERIMENTAL METHODS

BJT is a bipolar junction transistor is a three-terminal semiconductor device that consists of two p-n
junctions which can amplify or magnify a signal.

Figure-1: BJT

There are three operating regions of a bipolar junction transistor:

• Active region: The region in which the transistors operate as an amplifier.


• Saturation region: The region in which the transistor is fully on and operates as a switch such that
collector current is equal to the saturation current.
• Cut-off region: The region in which the transistor is fully off and collector current is equal to zero.

These three doped regions form two junctions: one between the emitter and base and the other
between collector and base. Because of these it can be thought of as a combination of two diodes,
Emitter and base form a diode and collector and base form another diode. is radioactive the
function of heavily doped is to emit or inject free majority carriers (electrons for NPN and holes for
PNP). The base in base is lightly doped and very thin. It bypasses most emitters of injection Electron
(for NPN) in the collector. The doping level of the collector is between the emitter and the base.

The characteristic of a transistor is measured by two characteristics curve.


a) Input characteristics curve.
b) Output characteristics curve.
Figure-2: NPN transistor Figure-3: PNP transistor

Figure-4: Input characteristics of NPN transistor

Figure-5: Circuit Diagram


Data Collection:

Experiment-3:

Performed by Group: ___________

VCE = 1V VCE = 5V
VBB VBE VRB IB=VRB/RB VBB VBE VRB IB=VRB/RB
(volts) (volts) (volts) (µA) (volts) (volts) (volts) (µA)
0.1 42.53 2.41 0.024 0.1 0.04 0.002 0.02
0.2 89.96 5 0.05 0.2 0.09 0.0024 0.024
0.3 219.49 11 0.11 0.3 0.22 0.004 0.04
0.4 310 15 0.15 0.4 0.32 0.010 0.186
0.5 450 24 0.24 0.5 0.45 0.02 0.203
0.6 520 50 0.51 0.6 0.53 0.06 0.609
0.7 525 97 0.99 0.7 0.62 0.10 1.02
0.8 575 207 2.1 0.8 0.69 0.14 1.50
0.9 596 270 2.74 0.9 0.80 0.23 2.33
1.0 599 373 3.79 1.0 0.89 0.31 3.14
1.2 609 532 5.4 1.2 1.11 0.50 5.14
1.4 615 725 7.36 1.4 1.32 0.69 7.05
1.6 619 948 9.62 1.6 1.55 0.91 9.33
1.8 621 1152 11.70 1.8 1.68 1.05 10.66
2.0 623 1370 13.76 2.0 1.91 1.26 12.88
REPORT

Question-1: Plot IB vs VBE for different values of VCE.


Answer-1:

RESULT

After comparing the theoretical & measured values we found that there are some minor changes between the
measured value and theoretical value.

CONCLUSIONS

In this experiment we learn how to work with BJT. We also learned to determine the common emitter of
BJT. While doing this lab the readings were taken very carefully and to prevent short circuits the circuit was
also designed very carefully.

VIGILANCE

The circuit is made very carefully and tried to do with the least error. The data entry and graph draw part
also have been done with care.

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