2SC4020

Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-25(TO220)
Symbol 2SC4020 Unit Symbol Conditions 2SC4020 Unit
10.2±0.2 4.8±0.2

3.0±0.2
VCBO 900 V ICBO VCB=800V 100max µA 2.0±0.1

VCEO 800 V IEBO VEB=7V 100max µA

16.0±0.7
VEBO 7 V V(BR)CEO IC=10mA 800min V

8.8±0.2
a ø3.75±0.2
IC 3(Pulse 6) A hFE VCE=4V, IC=0.7A 10 to 30
b
IB 1.5 A VCE(sat) IC=0.7A, IB=0.14A 0.5max V
PC 50(Tc=25°C) W VBE(sat) IC=0.7A, IB=0.14A 1.2max V 1.35

4.0max
12.0min
Tj 150 °C fT VCE=12V, IE=–0.3A 6typ MHz
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Tstg –55 to +150 COB VCB=10V, f=1MHz 40typ pF 0.65 +0.2
°C -0.1

2.5 2.5 1.4

■Typical Switching Characteristics (Common Emitter) B C E
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.6g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Type No.
250 357 0.7 10 –5 0.1 –0.35 1max 5max 1max b. Lot No.

I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
A (I C /I B =5) (V C E =4V)
Collector-Emitter Saturation Voltage V CE(s a t) (V )

m 3
3 5 00 2
40 0m A
Base-Emitter Saturation Voltage V B E (s a t) (V )

300m A

Collector Current I C (A)

Collector Current I C (A)

200 mA
2 2

140mA

mp)

mp)
p)
1
100mA

ase Tem
e Te

ase Te
V B E (sat)

(Cas
1 60mA 1

25˚C (C
–30˚C (C
125˚C
I B =20mA

V C E (sat)
0 0 0
0 1 2 3 4 0.03 0.05 0.1 0.5 1 5 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) t on •t stg • t f – I C Characteristics (Typical) θ j-a – t Characteristics

θ j- a ( ˚ C/ W)

(V C E =4V)
50 6 5
5
t o n• t s t g• t f (µ s)

125˚C
t s tg
DC C urrent G ain h FE

Transient Thermal Resistance

25˚C
VCC 250V
–30˚C IC:IB1:– IB2=2:0.3:1 Const.
Switching Ti me

10 1
1
tf
5 0.5
0.5
t on

2 0.2 0.3
0.02 0.05 0.1 0.5 1 3 0.1 0.5 1 3 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
10 10 50

5 5
Ma xim um Powe r Dissipat io n P C (W)

40
10
0µ
W

s
ith
Collecto r Cur rent I C (A)

Collecto r Cur rent I C (A)

In
fin

30
ite
he

1 1
at
si
nk

Without Heatsink 20
0.5 0.5 Natural Cooling
Without Heatsink L=3mH
Natural Cooling IB2=–1.0A
Duty:less than 1% 10

Without Heatsink
0.1 2
0.1 0
50 100 500 1000 50 100 500 1000 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

83