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Module - 2 BJT Basic Electronics PDF

The document is a lecture on basic electronics covering Bipolar Junction Transistors (BJT) and Field Effect Transistors (FET). It discusses BJT operation, voltages and currents, amplification configurations including common base, common emitter and common collector. It also covers FETs including JFETs and MOSFETs. BJT biasing concepts such as load lines and bias points are introduced. Key sections cover transistor characteristics, amplification, and configurations for BJTs and basic information on FETs.
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0% found this document useful (0 votes)
256 views41 pages

Module - 2 BJT Basic Electronics PDF

The document is a lecture on basic electronics covering Bipolar Junction Transistors (BJT) and Field Effect Transistors (FET). It discusses BJT operation, voltages and currents, amplification configurations including common base, common emitter and common collector. It also covers FETs including JFETs and MOSFETs. BJT biasing concepts such as load lines and bias points are introduced. Key sections cover transistor characteristics, amplification, and configurations for BJTs and basic information on FETs.
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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║JAI SRI GURUDEV║

Sri AdichunchanagiriShikshana Trust (R)

SJB INSTITUTE OF TECHNOLOGY


BGS Health & Education City, Kengeri , Bangalore – 60 .

DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

Basic Electronics 22BEE13/23


Module – 2
BJT & FET
Dr. Komala.M
Associate Professor,
Dept. of ECE
SJBIT
1
Module-2 (8 Hours)
• Bipolar Junction Transistors:
Introduction, BJT Voltages & Currents, BJT
Amplification, Common Base Characteristics,
Common Emitter Characteristics, Common Collector
Characteristics, BJT Biasing: Introduction, DC Load
line and Bias point (Text 1: 4.2, 4.3, 4.5,4.6, 5.1)

• Field Effect Transistor:


Junction Field Effect Transistor, JFET Characteristics,
MOSFETs: Enhancement MOSFETs, Depletion
Enhancement MOSFETs (Text 1: 9.1,9.2,9.5)
Text book

Electronic Devices and Circuits, David A Bell, 5th


Edition, Oxford, 2016

• Chapter -4 (4.2, 4.3, 4.5,4.6)


• Chapter -5 (5.1)
• Chapter-9 (9.1,9.2,9.5)
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Why it is called BJT
• A junction transistor is simply a sandwich of one
type of semiconductor material (p-type or n-type)
between two layers of the opposite type.
• The centre layer is called the base, one of the outer
layers is termed the emitter, and the other outer
layer is referred to as the collector.
• The emitter, base, and collector are provided with
terminals which are appropriately labelled E, B, and
C.
• Two PN-junctions exist within each transistor: the
collector-base junction and the emitter-base
junction.

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Transistor block and symbol representation

Module-2 Dr.Komala.M
Transistor Operation packages
• Low-power transistor : pass currents of 1 mA to
20 mA.
• High power device: Current levels for high-power
transistors range from 100 mA to several amps

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Operation of NPN Transistor

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Operation of PNP Transistor

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Transistor Voltages in
NPN and PNP Transistor

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Transistor Current in PNP Transistors

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Current in PNP Transistors

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Currents in NPN Transistor

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Currents in NPN Transistor

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General Note
• αdc (alpha dc) is the emitter-to-collector
current gain, or the ratio of collector current
to emitter current.
• αdc = IC /IE.
• αdc is typically 0.96 to 0.995
• αdc is termed the common-base dc current
gain.

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General Note
• βdc (beta dc) is the base-to-collector current
gain, or the ratio of collector current to base
current.
• βdc = IC /IB
• βdc ranges from 25 to 300.
• βdc is also termed the common-emitter dc
current gain.

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BJT as an Amplifier

• Amplification is the process of linearly


increasing the amplitude of an electrical signal.
• Amplifier circuits have both dc and ac
quantities

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DC and AC Quantities:
DC quantities always carry an uppercase (large letter) subscript.
For example
 IB , IC , and IE are the dc transistor currents.
 VBE , VCB , and VCE are the dc voltages from one transistor terminal to another.
 Single subscripted voltages such as VB, VC, and VE are dc voltages from the
transistor terminals to ground.

AC quantities always carry a lowercase (small letter) subscript.


For example,
 Ib, Ic, and Ie are the ac transistor currents.
 Vbe, Vcb, and Vce are the ac voltages from one transistor terminal to another.
 Single subscripted voltages such as Vb, Vc, and Ve are ac voltages from the
transistor terminals to ground.

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Current Amplification in Transistor
• A small change in the base current (ΔIB) produces a
large change in collector current (ΔIC) and a large
emitter current change (ΔIE).
• The increasing and decreasing levels of input and
output currents may be defined as alternating
quantities.

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Bipolar Transistor Configurations
Bipolar Transistor is a three terminal device, there are
basically three possible ways to connect it within an electronic
circuit with one terminal being common to both the input and
output signals.

Common Base Configuration


Common Emitter Configuration
Common Collector Configuration

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Common Base (CB) Configuration
• A pnp transistor with its base terminal common
to both the input (EB) voltage and the output
(CB) voltage.

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Common Base (CB) Configuration
Common Base (CB) Configuration
Common Base (CB) Configuration
Common Emitter Configuration

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Common Emitter Configuration

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Common Emitter Configuration

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Common Emitter Configuration

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Common Emitter Configuration

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DC Load Line of BJT Biasing Circuit
• The DC Load Line of BJT Biasing Circuit is a straight line drawn
on the transistor output characteristics.
• For a common-emitter (CE) circuit, the load line is a graph of
collector current (IC) versus collector-emitter voltage (VCE)

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DC Bias Point (Q-Point):
• The dc bias point, or quiescent point (Q-point) defines the dc
conditions in the circuit. It identifies the transistor collector
current and collector-emitter voltage when there is no input
signal at the base terminal.
• When a signal is applied to the transistor base, IB varies
according to the instantaneous amplitude of the signal. This
causes IC to vary, and consequently produces a variation in VCE.

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