JIEJIE MICROELECTRONICS CO.

, Ltd
JST138 Series 12A TRIACs Rev.3.0

DESCRIPTION:
JST138 series triacs with low holding and latching
current are especially recommended for use on
middle and small resistance type power load. 12 12
3 3 TO-220F
JST138F provides insulation voltage rated at 2000V TO-220C Insulated
RMS from all three terminals to external heatsink
2
complying with UL standards (File ref: E252906).

1
3 TO-263
MAIN FEATURES

Symbol Value Unit

T2(2) T1(1)
IT(RMS) 12 A
G(3)
VDRM /VRRM 600 and 800 V

ABSOLUTE MAXIMUM RATINGS

Parameter Symbol Value Unit
Storage junction temperature range Tstg -40-150 ℃
Operating junction temperature range Tj -40-125 ℃
Repetitive peak off-state voltage(Tj=25℃) VDRM 600/800 V
Repetitive peak reverse voltage(Tj=25℃) VRRM 600/800 V
Non repetitive surge peak Off-state voltage VDSM VDRM + 100 V
Non repetitive peak reverse voltage VRSM VRRM + 100 V
TO-220C(TC=110℃)
TO-220F(Ins)
RMS on-state current IT(RMS) 12 A
(TC= 95℃)
TO-263(TC=113℃)
Non repetitive surge peak on-state current
ITSM 95 A
(full cycle, F=50Hz)
I2t value for fusing (tp=10ms) I2t 45 A2s
Critical rate of rise of on-state current
dI/dt 50 A/μs
(IG=2×IGT)
Peak gate current IGM 2 A

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JST138 Series JieJie Microelectronics CO. , Ltd
Average gate power dissipation PG(AV) 0.5 W
Peak gate power PGM 5 W

ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)

Value
Symbol Test Condition Quadrant Unit
D E F
Ⅰ-Ⅱ-Ⅲ 5 10 25
IGT MAX mA
VD=12V RL=33Ω Ⅳ 10 25 70
VGT ALL MAX 1.5 V
VD=VDRM Tj=125℃
VGD ALL MIN 0.2 V
RL=3.3KΩ
Ⅰ- Ⅲ 15 30 40
IL IG=1.2IGT MAX mA
Ⅱ- Ⅳ 20 40 60
IH IT=100mA MAX 10 30 40 mA
dV/dt VD=2/3VDRM Gate Open Tj=125℃ MIN 10 20 50 V/μs

STATIC CHARACTERISTICS
Symbol Parameter Value(MAX) Unit
VTM ITM=15A tp=380μs Tj=25℃ 1.65 V
IDRM Tj=25℃ 5 μA
VD=VDRM VR=VRRM
IRRM Tj=125℃ 1 mA

THERMAL RESISTANCES
Symbol Parameter Value Unit
TO-220C 3.0
Rth(j-c) junction to case(AC) TO-220F(Ins) 5.5 ℃/W
TO-263 2.1

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JST138 Series JieJie Microelectronics CO. , Ltd

ORDERING INFORMATION

J ST 138 C -600 E
D:IGT1-3≤5mA IGT4≤10mA
JieJie Microelectronics Co.,Ltd E:IGT1-3≤10mA IGT4≤25mA
F:IGT1-3≤25mA IGT4≤70mA

TRIACs 600:VDRM /VRRM≥600V

800:VDRM /VRRM≥800V
IT(RMS):12A F:TO-220F(Ins)
C:TO-220C E:TO-263

PACKAGE MECHANICAL DATA

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JST138 Series JieJie Microelectronics CO. , Ltd

PACKAGE MECHANICAL DATA

Dimensions
Ref. Millimeters Inches
m
3.6m Min. Typ. Max. Min. Typ. Max.
x
E Ma A A 4.40 4.60 0.173 0.181
Φ
C2
B 0.70 0.90 0.028 0.035
C 0.45 0.60 0.018 0.024

F
L3

C2 1.23 1.32 0.048 0.052

C3 2.20 2.60 0.087 0.102
D

D 8.90 9.90 0.350 0.390

H

E 9.90 10.3 0.390 0.406

C3
L1

L2 F 6.30 6.90 0.248 0.272

G 2.54 0.1
H 28.0 29.8 1.102 1.173
L1 3.39 0.133
B C
G L2 1.14 1.70 0.045 0.067
L3 2.65 2.95 0.104 0.116
TO-220C Φ 3.6 0.142

Dimensions
Ref. Millimeters Inches
m
5m Min. Typ. Max. Min. Typ. Max.
3. A
ax A 4.40 4.80 0.173 0.189
E M
Φ C2
B 0.74 0.80 0.83 0.029 0.031 0.033
C 0.48 0.75 0.019 0.030
L3

C2 2.40 2.70 0.094 0.106

C3 2.60 3.00 0.102 0.118
V1

D 8.80 9.30 0.346 0.366

D
H

E 9.70 10.3 0.382 0.406

C3
L1

F 6.40 7.00 0.252 0.276

L2
G 2.54 0.1
H 28.0 29.8 1.102 1.173
L1 3.63 0.143
B C
L2 1.14 1.70 0.045 0.067
G
L3 3.30 0.130

TO-220F Ins V1 45° 45°

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FIG.1 Maximum power dissipation versus RMS FIG.2: RMS on-state current versus case
on-state current temperature
P(w) IT(RMS) (A)
20 18
α=180°

15
15
TO-220C TO-263
12

10 9

TO-220F(Ins)
6
5
3

0 IT(RMS) (A) Tc (℃)

0
0 3 6 9 12 15 0 25 50 75 100 125

FIG.3: Surge peak on-state current versus FIG.4: On-state characteristics (maximum
number of cycles values)
ITSM (A) ITM (A)
105 100
t=20ms
One cycle
90

75 Tj=Tjmax

60
10
45

30
Tj=25℃
15
VTM (V)
0 Number of cycles 1
1 10 100 1000 0 1 2 3 4 5

FIG.5: Non-repetitive surge peak on-state current FIG.6: Relative variations of gate trigger current
for a sinusoidal pulse with width tp<20ms, and versus junction temperature
2
corresponging value of I t (dI/dt < 50A/μs)
ITSM (A), I 2 t (A 2 s) IGT(Tj) /IGT(Tj=25℃)
1000 4.0

3.0
ITSM
IGT3
dI/dt IGT4
100 2.0

IGT1&IGT2
I 2t 1.0

tp(ms) Tj (℃)
10 0.0
0.01 0.1 1 10 20 -40 -20 0 20 40 60 80 100 120 140

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JST138 Series JieJie Microelectronics CO. , Ltd
FIG.7: Relative variations of holding current FIG.8: Relative variations of latching current
versus junction temperature versus junction temperature

IH(Tj) /IH(Tj=25℃) IL(Tj) /IL(Tj=25℃)

3.0 3.0

2.5 2.5

2.0 2.0
IL

1.5 IH 1.5

1.0 1.0

0.5 0.5
Tj (℃) Tj (℃)
0.0 0.0
-40 -20 0 20 40 60 80 100 120 140 -40 -20 0 20 40 60 80 100 120 140

Information furnished in this document is believed to be accurate and reliable.

However, Jiangsu JieJie Microelectronics Co.,Ltd assumes no responsibility for the
consequences of use without consideration for such information nor use beyond it.
Information mentioned in this document is subject to change without notice, apart
from that when an agreement is signed, Jiangsu JieJie complies with the agreement.
Products and information provided in this document have no infringement of patents.
Jiangsu JieJie assumes no responsibility for any infringement of other rights of third
parties which may result from the use of such products and information.
This document is the third version which is made in 10-June-2015. This document
supersedes and replaces all information previously supplied.
is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd.
Copyright © 2015 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved.

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