DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

M3D114

2PD602A
NPN general purpose transistor
Product specification 1999 Apr 23
Supersedes data of 1997 Jun 20
Philips Semiconductors Product specification

NPN general purpose transistor 2PD602A

FEATURES PINNING
• High current (max. 500 mA) PIN DESCRIPTION
• Low voltage (max. 50 V). 1 base
2 emitter
APPLICATIONS 3 collector
• General purpose switching and amplification.

DESCRIPTION
handbook, halfpage 3
NPN transistor in an SC-59 plastic package. 3
PNP complement: 2PB710A.
1

MARKING 2
1 2

TYPE NUMBER MARKING CODE Top view MAM321

2PD602AQ XQ
2PD602AR XR Fig.1 Simplified outline (SC-59) and symbol.
2PD602AS XS

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter − 60 V
VCEO collector-emitter voltage open base − 50 V
VEBO emitter-base voltage open collector − 5 V
IC collector current (DC) − 500 mA
ICM peak collector current − 1 A
IBM peak base current − 200 mA
Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 250 mW
Tstg storage temperature −65 +150 °C
Tj junction temperature − 150 °C
Tamb operating ambient temperature −65 +150 °C

Note
1. Transistor mounted on an FR4 printed-circuit board.

1999 Apr 23 2
Philips Semiconductors Product specification

NPN general purpose transistor 2PD602A

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient note 1 500 K/W

Note
1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

ICBO collector cut-off current IE = 0; VCB = 60 V − 10 nA
IE = 0; VCB = 60 V; Tj = 150 °C − 5 µA
IEBO emitter cut-off current IC = 0; VEB = 4 V − 10 nA
hFE DC current gain IC = 150 mA; VCE = 10 V; note 1
2PD602AQ 85 170
2PD602AR 120 240
2PD602AS 170 340
DC current gain IC = 500 mA; VCE = 10 V; note 1 40 −
VCEsat collector-emitter saturation IC = 300 mA; IB = 30 mA; note 1 − 600 mV
voltage
Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − 15 pF
fT transition frequency IC = 50 mA; VCE = 10 V;
2PD602AQ f = 100 MHz; note 1 140 − MHz
2PD602AR 160 − MHz
2PD602AS 180 − MHz

Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.

1999 Apr 23 3
Philips Semiconductors Product specification

NPN general purpose transistor 2PD602A

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads SOT346

E A
D B X

HE v M A

A1
c
1 2

Lp
e1 bp w M B

e detail X

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT A A1 bp c D E e e1 HE Lp Q v w

1.3 0.1 0.50 0.26 3.1 1.7 3.0 0.6 0.33

mm 1.9 0.95 0.2 0.2
1.0 0.013 0.35 0.10 2.7 1.3 2.5 0.2 0.23

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION

SOT346 TO-236 SC-59 98-07-17

1999 Apr 23 4
Philips Semiconductors Product specification

NPN general purpose transistor 2PD602A

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1999 Apr 23 5
Philips Semiconductors Product specification

NPN general purpose transistor 2PD602A

NOTES

1999 Apr 23 6
Philips Semiconductors Product specification

NPN general purpose transistor 2PD602A

NOTES

1999 Apr 23 7
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© Philips Electronics N.V. 1999 SCA63

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Printed in The Netherlands 115002/00/04/pp8 Date of release: 1999 Apr 23 Document order number: 9397 750 05396