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    Pz0703ek Unikc PDF

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    Sergio Galli
    The document summarizes the specifications and characteristics of a P-channel logic level enhancement mode MOSFET. Key specifications include a drain-source breakdown voltage of -30V, an RDS(ON) of 7mΩ at -10V gate-source voltage, and a continuous drain current rating of -70A. The MOSFET has maximum ratings for drain-source voltage, gate-source voltage, continuous and pulsed drain current, avalanche current and energy, and power dissipation.

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    Pz0703ek Unikc PDF

    Uploaded by

    Sergio Galli
    38 views6 pages
    The document summarizes the specifications and characteristics of a P-channel logic level enhancement mode MOSFET. Key specifications include a drain-source breakdown voltage of -30V, an RDS(ON) of 7mΩ at -10V gate-source voltage, and a continuous drain current rating of -70A. The MOSFET has maximum ratings for drain-source voltage, gate-source voltage, continuous and pulsed drain current, avalanche current and energy, and power dissipation.

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    PZ0703EK-UNIKC (1).pdf

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    The document summarizes the specifications and characteristics of a P-channel logic level enhancement mode MOSFET. Key specifications include a drain-source breakdown voltage of -30V, an RDS(ON) of 7mΩ at -10V gate-source voltage, and a continuous drain current rating of -70A. The MOSFET has maximum ratings for drain-source voltage, gate-source voltage, continuous and pulsed drain current, avalanche current and energy, and power dissipation.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    38 views6 pages

    Pz0703ek Unikc PDF

    Uploaded by

    Sergio Galli
    The document summarizes the specifications and characteristics of a P-channel logic level enhancement mode MOSFET. Key specifications include a drain-source breakdown voltage of -30V, an RDS(ON) of 7mΩ at -10V gate-source voltage, and a continuous drain current rating of -70A. The MOSFET has maximum ratings for drain-source voltage, gate-source voltage, continuous and pulsed drain current, avalanche current and energy, and power dissipation.

    Copyright:

    © All Rights Reserved
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    Download as pdf or txt
    of 6

    PZ0703EK

    P-Channel Logic Level Enhancement Mode MOSFET

    PRODUCT SUMMARY
    V(BR)DSS RDS(ON) ID3

    -30V 7mΩ @VGS = -10V -70A

    PDFN 5*6P

    ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)


    PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
    Drain-Source Voltage VDS -30
    V
    Gate-Source Voltage VGS ±20
    TC = 25 °C -70
    Continuous Drain Current3 ID
    TC = 100 °C -56
    1 IDM
    Pulsed Drain Current -150
    A
    TA = 25 °C -13
    Continuous Drain Current ID
    TA = 70 °C -10
    Avalanche Current IAS -71
    Avalanche Energy L = 0.1mH EAS 252 mJ
    TC = 25 °C 50
    TC = 100 °C 32
    Power Dissipation PD W
    TA = 25 °C 2.5
    TA = 70 °C 1.6
    Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 °C

    REV 1.0 1 2014/7/14


    PZ0703EK
    P-Channel Logic Level Enhancement Mode MOSFET

    THERMAL RESISTANCE RATINGS


    THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
    Junction-to-Case RqJC 2.5
    °C / W
    Junction-to-Ambient RqJA 50
    1
    Pulse width limited by maximum junction temperature.
    2
    The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
    environment with TA =25°C. The value in any given application depends on the user's specific board design.
    3
    Package limitation current is -51A.

    ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)


    LIMITS
    PARAMETER SYMBOL TEST CONDITIONS UNITS
    MIN TYP MAX
    STATIC
    Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250mA -30
    V
    Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250mA -1 -1.4 -3
    Gate-Body Leakage IGSS VDS = 0V, VGS = ±16V ±30 mA
    VDS = -24V, VGS = 0V -1
    Zero Gate Voltage Drain Current IDSS mA
    VDS = -20V, VGS = 0V , TJ = 125 °C -10
    Drain-Source On-State VGS = -4.5V, ID = -20A 5.7 10
    RDS(ON) mΩ
    Resistance1 VGS = -10V, ID = -20A 3.8 7
    Forward Transconductance1 gfs VDS = -5V, ID = -12A 65 S
    DYNAMIC
    Input Capacitance Ciss 5210
    Output Capacitance Coss VGS = 0V, VDS = -15V, f = 1MHz 960 pF
    Reverse Transfer Capacitance Crss 890
    Qg(VGS =10V) 121
    Total Gate Charge2
    Qg(VGS =4.5V) VDS = -15V,VGS = -10V, 64
    nC
    Gate-Source Charge 2 Qgs ID = -20A 12
    Gate-Drain Charge2 Qgd 27
    2 td(on)
    Turn-On Delay Time 33
    2 tr
    Rise Time VDS = -15V, 25
    nS
    Turn-Off Delay Time 2 td(off) ID @ -20A, VGS = -10V, RGS = 6Ω 100
    Fall Time2 tf 45

    REV 1.0 2 2014/7/14


    PZ0703EK
    P-Channel Logic Level Enhancement Mode MOSFET

    SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)


    Continuous Current3 IS -70 A
    1 VSD IF = -20A, VGS = 0V
    Forward Voltage -1.3 V
    Reverse Recovery Time trr 26.5 nS
    IF = -20A, dlF/dt = 100A / μS
    Reverse Recovery Charge Qrr 16 nC
    1
    Pulse test : Pulse Width  300 msec, Duty Cycle  2％.
    2
    Independent of operating temperature.
    3
    Package limitation current is -51A.

    REV 1.0 3 2014/7/14


    PZ0703EK
    P-Channel Logic Level Enhancement Mode MOSFET

    REV 1.0 4 2014/7/14


    PZ0703EK
    P-Channel Logic Level Enhancement Mode MOSFET

    REV 1.0 5 2014/7/14


    PZ0703EK
    P-Channel Logic Level Enhancement Mode MOSFET

    REV 1.0 6 2014/7/14

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