Device Lab Manual (New)
Device Lab Manual (New)
Device Lab Manual (New)
Nazirabad, Kolkata-150
Version 2
Electronic Devices
Laboratory Manual
(b) Problem Analysis: Identify, formulate, review research literature, and analyze complex
engineering problems reaching substantiated conclusions using first principles of
mathematics, natural sciences, and engineering sciences.
(h) Ethics: Apply ethical principles and commit to professional ethics and responsibilities and
norms of the engineering practice.
(i) Individual and team work: Function effectively as an individual, and as a member or
leader in diverse teams, and in multidisciplinary settings.
(j) Communication: Communicate effectively on complex engineering activities with the
engineering community and with society at large, such as, being able to comprehend and
write effective reports and design documentation, make effective presentations, and give
and receive clear instructions.
(k) Project management and finance: Demonstrate knowledge and understanding of the
engineering and management principles and apply these to one's own work, as a member
and leader in a team, to manage projects and in multidisciplinary environments.
(l) Life-long learning: Recognize the need for, and have the preparation and ability to
engage in independent and life-long learning in the broadest context of technological
change.
PEO 1: The graduates shall have a good understanding of the Electronics and
Communication Engineering fundamentals for identifying and analyzing real-life
engineering problems in communication, automation, and VLSI industries.
PEO 2: The graduates will be encouraged in research and innovative approaches for
successful career growth in VLSI, communication, embedded and automation industries
and blossom into entrepreneurs, scientists, and technocrats.
PEO4: The graduates shall be inculcated with professional ethics, and managerial
and communication skills to develop ingenious solutions for the benefit of society and the
environment
ELECTRONIC DEVICES LABORATORY
DO’S
DON’ TS
1. Do not exceed the voltage Rating.
2. Do not inter change the components while doing the experiment without consent of
the lab-in charge.
3. Avoid loose connections and short circuits.
4. Do not throw the connecting wires on the floor.
5. Do not come late in the laboratory.
6. Do not make noise if you don’t get the output or result. Concern Faculty/TA will
guide you.
Rules and regulations for Electronic Devices
Laboratory
1. Students should not enter in the lab without the permission of lab
In-Charge.
2. Every student/faculty should mention their name, time and
computer/Equipment no. in the log book before accessing the lab.
3. Students may use the lab in their allotted classes only. In other
cases they can also use the lab with prior permission.
4. Do not access the lab in absence of the faculty member.
5. Cleanliness and disciplines should be maintained properly.
All of you are advised to follow the above mentioned rules.
Rubrics for Lab Performance Assessment
Each week students will be assessed on their participation and performance in lab.
The points each week will be totaled and combined with assignments/report
writing for overall evaluation.
Overall Lab Performance (End of the semester)
Lab participation- 40 % of internal marks (i.e.16)
Assignments/Report submission- 60% of internal marks (24)
B. Lab performance is good with most assessments at the adequate level (with no
more than 2 substandard) or above. At most the student has one lab absence.
C. Lab performance is fair with most assessments at the Adequate and Substandard
levels. The student may have been absent 2-3 times.
D. Lab performance is barely adequate with less than half of assessments at the
Adequate level or higher. The student may have been absent upto 40% of total
experiments.
E. Lab performance is not sufficient to pass since 50% of assignments were not
completed (or unacceptable) and/or the student missed more than 50% of total
experiments.
The rubrics for Lab Performance assessment are shown in Table B.2.2.1.9 and
Table B.2.2.1.10
LIST OF EXPERIMET
6. Study of LDR.
9.Study of drain characteristics and transfer characteristics of a JFET and hence determine the
FET parameters (drain resistance, transconductance & amplification factor).
Department of ECE
OFF-LINE
Odd Semester; AY 20 – 20 .
Class Roll No. : Course Name: Electronic Devices Course Code: EC391
Laboratory
Laboratory Manual
Course Name: Electronics Device laboratory
Course Code: EC391
Experiment No: 1
Name of the experiment: Familiarization with Electronic Components such as Resistor, Capacitor, Diode,
Transistor, FET etc.
1A.Course Outcome: The students will be able to identify different electronics components, equipment and
measuring instruments(EC391.1).
1B Objective: to get the basic knowledge of electronic components such as resistor, capacitor,
diode,LED,transistors, FET etc.
2. Theory:
Resistor:
A resistor is a two-terminal electronic component that produces a voltage across its terminals that is proportional
to the electric current through it in accordance with Ohm's law:
V = IR
Resistors are elements of electrical networks and electronic circuits and are ubiquitous in most electronic
equipment. Practical resistors can be made of various compounds and films, as well as resistance wire (wire made
of a high-resistivity alloy, such as nickel/chrome).
The primary characteristics of a resistor are the resistance, the tolerance and the power rating.
Resistors can be integrated into hybrid and printed circuits, as well as integrated circuits. Size, and position of
leads (or terminals) are relevant to equipment designers; resistors must be physically large enough not to overheat
when dissipating their power.
Power dissipation
The power dissipated by a resistor is the voltage across the resistor multiplied by the current through the resistor:
If the average power dissipated is more than the resistor can safely dissipate, the resistor may depart from its
nominal resistance, and may be damaged by overheating.
MSIT/ECE/Electronics Device laboratory/
EC391/EX-1
capacitors may be set at any one of several discrete values. The capacitance of variable capacitors may be
adjusted continuously and set at any value between minimum and maximum limits fixed by construction.
Capacitance is a measure of a capacitor's ability to store charge. A large capacitance means that more charge can
be stored. Capacitance is measured in farads, symbol F. However 1F is very large, so prefixes are used to show
the smaller values.
Three prefixes (multipliers) are used, µ (micro), n (nano) and p (pico):
µ means 10-6 (millionth), so 1000000µF = 1F
n means 10-9 (thousand-millionth), so 1000nF = 1µF
p means 10-12 (million-millionth), so 1000pF = 1nF
Capacitor values can be very difficult to find because there are many types of capacitor with different labelling
systems! There are many types of capacitor but they can be split into two groups, polarised and unpolarised. Each
group has its own circuit symbol.
Polarised capacitors (large values, 1µF +)
Many small value capacitors have their value printed but without a multiplier, so you need to use experience to
work out what the multiplier should be!
For example 0.1 means 0.1µF = 100nF.
Sometimes the multiplier is used in place of the decimal point: For example: 4n7
means 4.7nF.
Capacitor Number Code
A number code is often used on small capacitors where printing is difficult:
the 1st number is the 1st digit,
the 2nd number is the 2nd digit,
the 3rd number is the number of zeros to give the capacitance in pF.
Ignore any letters - they just indicate tolerance and voltage rating.
For example: 102 means 1000pF = 1nF (not 102pF!)
For example: 472J means 4700pF = 4.7nF (J means 5% tolerance).
Colour code is also used for find the value of capaticor.
Diode:
In electronics, a diode is a two-terminal device (thermionic diodes may also have one or two ancillary terminals
for a heater).
Diodes have two active electrodes between which the signal of interest may flow, and most are used for their
unidirectional electric current property. The varicap diode is used as an electrically adjustable capacitor.
Most diodes today are based on semiconductor p-n junctions. In a p-n diode, conventional current is from the p-
type side (the anode) to the n-type side (the cathode), but not in the opposite direction. Another type of
semiconductor diode, the Schottky diode, is formed from the contact between a metal and a semiconductor rather
than by a p-n junction.
Diodes allow electricity to flow in only one direction. The arrow of the circuit symbol shows the direction in
which the current can flow. Diodes are the electrical version of a valve and early diodes were actually called
valves.
Circuit symbol:
Fig.5: Circuit symbol of diode
Diodes must be connected the correct way round, the diagram may be labelled a or + for anode and k or - for
cathode (yes, it really is k, not c, for cathode!). The cathode is marked by a line painted on the body. Diodes are
labelled with their code in small print, you may need a magnifying glass to read this on small signal diodes!
MSIT/ECE/Electronics Device laboratory/
EC391/EX-1
3. Requirement:
Resistors
Capacitors
Diodes
Transistors
FET
MSIT/ECE/Electronics Device laboratory/
EC391/EX-1
6. Area of applications:
Knowledge can be applied to identify & measure the parameters of the components.
7. Question Banks:
List important specifications of the diode.
List different types of the diode.
List different types of the resistor.
8. References:
G. Streetman, and S. K. Banerjee, “Solid State Electronic Devices,” 7th edition, Pearson,2014.
S. M. Sze and K. N. Kwok, “Physics of Semiconductor Devices,” 3rd edition, John Wiley & Sons, 2006.
Electronics fundamentals and application by D.Chattopadhyay & P.C.Rakshit, New Age International Publishers.
Advanced electronic practical book by A.B.Bhattacharya New Central Book Agency(P) Ltd.
MSIT/ECE/Electronics Device laboratory/
EC391/EX-2
Experiment No:2
Name of the Experiment: Study of different instruments used in the laboratories like, power supply,
Oscilloscope, Multi-meter etc.
1A.Course Outcome: The students will be able to identify different electronics components, equipment and
measuring instruments(EC391.1).
1B Objective: to study the use of power supply, multimeter and to observe different waveforms on the
C.R.O. and measure amplitude and frequency of the waveforms.
2. Theory:
Power supply:
Power is the backbone of any electronic system and the power supply is what feeds the system. A power supply
takes the AC from the wall outlet, converts it to unregulated DC, and reduces the voltage using an input power
transformer, typically stepping it down to the voltage required by the load. For safety reasons, the transformer
also separates the output power supply from the mains input.
C.R.O:
C.R.O. (Cathode Ray Oscilloscope) is the instrument which is used to observe signal waveforms. Signals are
displayed in time domain i.e. variation in amplitude of the signal with respect to time is plotted on the CRO
screen. X-axis represents time and Y-axis represents amplitude. It is used to
measure amplitude, frequency and phase of the waveforms. It is also used to observe shape of the waveform.
C.R.O. is useful for troubleshooting purpose. It helps us to find out gain of amplifier, test oscillator circuits. We
can measure amplitude and frequency of the waveforms at the different test
points in our circuit. Thus, it helps us for fault finding procedure.
Latest digital storage oscilloscope display voltage and frequency directly on the LCD and does not require any
calculations. It can also store waveform for further analysis. In this practical, we will measure amplitude and
frequency of the different waveforms like sine wave, square wave, triangular
wave.
MSIT/ECE/Electronics Device laboratory/
EC391/EX-2
Procedure:
1. Connect function generator output at the input of C.R.O. at channel 1or at channel 2
2. Select proper channel i.e. if signal is connected to channel 1 select CH1 and if signal is connected to channel 2
select CH2
3. Adjust Time /Div knob to get sufficient time period displacement of the wave on the CRO screen.
4. With fine tuning of time/Div make the waveform steady on screen.
5. Use triggering controls if waveform is not stable.
6. Keep volt/div knob such that waveform is visible on the screen without clipping.
7. Measure P-P reading along y-axis. This reading multiplied with volt/div gives peak to peak amplitude of the ac
i/p wave.
8. Measure horizontal division of one complete cycle. This division multiplied by time/div gives time period of
the i/p wave.
9. Calculate frequency using formula f = 1/T.
10. Note down your readings in the observation table.
Multimeter:
A multimeter, is a device used to measure two or more electrical quantities. A multimeter can be used to measure
electrical functions such as voltage, current, resistance, continuity and some are able to measure electrical
frequency.
3. Requirement:
Apparatus:
Function Generator
C.R.O
Calculation:
Amplitude (p-p) = a*b
Frequency (f) = 1/T
Draw the graph from above results.
6. Area of applications:
Knowledge can be applied to measure and test signal at different point of the circuit.
7. Question Banks:
What is the use of C.R.O.
MSIT/ECE/Electronics Device laboratory/
EC391/EX-2
What is highest voltage that can be measured by C.R.O. available in your laboratory?
What is the highest frequency that can be measured by C.R.O. availablein your laboratory?
8. References:
G. Streetman, and S. K. Banerjee, “Solid State Electronic Devices,” 7th edition, Pearson,2014.
S. M. Sze and K. N. Kwok, “Physics of Semiconductor Devices,” 3rd edition, John Wiley & Sons, 2006.
Electronics fundamentals and application by D.Chattopadhyay & P.C.Rakshit, New Age International Publishers.
Advanced electronic practical book by A.B.Bhattacharya New Central Book Agency(P) Ltd.
MSIT/ECE/Electronic Devices laboratory/
EC391/EX-3
Experiment No:3
Name of the Experiment: Study of I-V characteristics of p-n junction diode.
1A.Course Outcome: The students will be able to describe the characteristics of PN junction diodes to
tabulate different parameter(EC391.2).
1B Objective:
To plot the I-V characteristics of a forward biased p-n junction diode.
To measure the static and dynamic resistance of a forward biased p-n junction diode.
2. Theoryp–n junction is a junction formed by joining P-type and N-type semiconductors together in very close
contact. The term junction refers to the region where the two regions of the semiconductor meet. It can be thought
of as the border region between the p-type and n-type blocks. Forward bias occurs when the P-type semiconductor
material is connected to the positive terminal of a battery and the N-type semiconductor material is connected to
the negative terminal. This usually makes the p–n junction conduct.
With a battery connected this way, the holes in the P-type region and the electrons in the N-type region are pushed
towards the junction. This reduces the width of the depletion zone. The positive charge applied to the P-type
material repels the holes, while the negative charge applied to the N-type material repels the electrons. As
electrons and holes are pushed towards the junction, the distance between them decreases. This lowers the barrier
in potential. With increasing forward-bias voltage, the depletion zone eventually becomes thin enough that the
zone's electric field can't counteract charge carrier motion across the p–n junction, consequently reducing
electrical resistance. The electrons which cross the p–n junction into the P-type material (or holes which cross into
the N-type material) will diffuse in the near-neutral region. Therefore, the amount of minority diffusion in the
near-neutral zones determines the amount of current that may flow through the diode.
If a diode is reverse biased, the voltage at the cathode is higher than that at the anode. Therefore, no current will
flow until the diode breaks down. Connecting the P-type region to the negative terminal of the battery and the N-
type region to the positive terminal corresponds to reverse bias. Because the p-type material is now connected to
the negative terminal of the power supply, the 'holes' in the P-type material are pulled away from the junction,
causing the width of the depletion zone to increase. Similarly, because the N-type region is connected to the
positive terminal, the electrons will also be pulled away from the junction. Therefore the depletion region widens,
and does so increasingly with increasing reverse-bias voltage. This increases the voltage barrier causing a high
resistance to the flow of charge carriers thus allowing minimal electric current to cross the p–n junction. Typical
graph is shown below.
MSIT/ECE/Electronic Devices laboratory/
EC391/EX-3
Circuit Diagram:
Procedure:
Connect the apparatus and the components as per circuit diagram.
Circuit should be checked by the teacher.
Vary the input voltage from 0.2V to1V at an interval of 0.2V, 1V to 3V at an interval of 0.5V, 3V to 8V
at an interval of 1V and measure the corresponding diode voltage and diode current.
3. Requirement:
Apparatus:
DC Power Supply
Voltmeter (0-2) V/Multimeter
Ammeter (0-50) mA/ Multimeter
Component:
MSIT/ECE/Electronic Devices laboratory/
EC391/EX-3
Diode (1N4007)
Resistor (560Ω)/1kΩ
Calculation:
Static resistance =∑V/ ∑I
6. Area of applications:
Knowledge can be applied to design rectifier circuit.
7. Question Banks:
List important specifications of the diode.
What is breakdown voltage?
List different types of the diode.
List applications of the diode?
8. References:
G. Streetman, and S. K. Banerjee, “Solid State Electronic Devices,” 7th edition, Pearson,2014.
S. M. Sze and K. N. Kwok, “Physics of Semiconductor Devices,” 3rd edition, John Wiley & Sons, 2006.
Electronics fundamentals and application by D.Chattopadhyay & P.C.Rakshit, New Age International Publishers.
Advanced electronic practical book by A.B.Bhattacharya New Central Book Agency(P) Ltd.
MSIT/ECE/Electronic Devices laboratory/
EC391/EX-4
Experiment No: 4
Name of the Experiment: Study the characteristics of Zener diode and load regulation.
1A.Course Outcome: The students will be able to explain zener diode characteristics and regulation
property (C391.3).
1B. Objective:
To plot the I-V characteristics of a reverse biased Zener diode.
To measure the static and dynamic resistance of a reverse biased Zener diode.
To calculate the load regulation as a voltage regulator.
2. Theory:
The Zener diode is a heavily doped special purpose diode. Where the common diode is designed to never let
current flow in the reverse direction, the Zener is designed to break down and let current flow backward at some
specific voltage called Zener breakdown voltage. They conduct like a normal diode in the forward direction but in
the reverse direction will not allow the voltage across the diode to exceed the rated zener voltage. Consequently,
they make great voltage regulators or references. The current must be externally limited otherwise it will be
damaged if the current isn't held to a safe value. This is usually accomplished with a simple resistor. Typical
characteristics graph of Zener diode in reverse biased mode is shown below.
MSIT/ECE/Electronic Devices laboratory/
EC391/EX-4
Circuit Diagram:
Procedure:
3. Requirement:
Apparatus:
DC Power Supply
Voltmeter (0-20) V
Ammeter (0-50) mA
Component:
Zener Diode
Resistors (560Ω),1k
Calculation:
6. Area of applications:
Knowledge can be applied to design voltage regulator circuit.
7. Question Banks:
What is the breakdown voltage of Zener diode used in your practical?
What is the specialty of Zener diode so as we can operate it in breakdown region for longer duration?
What is the difference between Zener breakdown and Avalanche breakdown?
8. References:
G. Streetman, and S. K. Banerjee, “Solid State Electronic Devices,” 7th edition, Pearson,2014.
S. M. Sze and K. N. Kwok, “Physics of Semiconductor Devices,” 3rd edition, John Wiley & Sons, 2006.
Electronics fundamentals and application by D.Chattopadhyay & P.C.Rakshit, New Age International Publishers.
Advanced electronic practical book by A.B.Bhattacharya New Central Book Agency(P) Ltd.
MSIT/ECE/Electronic Devices laboratory/
EC391/EX-5
Experiment No: 5
Name of the Experiment: Study the characteristics of LED
1A.Course Outcome: The students will be able to discuss properties of photoelectric devices
(C391.6).
1B. Objective:
To plot the I-V characteristics of forward biased LED.
2. Theory:
A Light Emitting Diode (LED) is a semiconductor diode that emits light when an electric current is applied in
forward bias direction of the device as in simple LED circuit. The effect is a form of electro-luminescence where
incoherent and narrow-spectrum light is emitted from the p-n junction.
LED Characteristics
Two important characteristics of a LED are its Light intensity vs. Current and Junction Voltage vs. Current
characteristics. These are described briefly below.
Like conventional PN junction diodes, light emitting diodes are current-dependent devices with its forward
voltage drop VF, depending on the semiconductor compound (its light colour) and on the forward biased LED
current. Most common LED’s require a forward operating voltage of between approximately 1.2 to 3.6 volts with
a forward current rating of about 10 to 30 mA, with 12 to 20 mA being the most common range.
Both the forward operating voltage and forward current vary depending on the semiconductor material used but
the point where conduction begins and light is produced is about 1.2V for a standard red LED to about 3.6V for a
blue LED.
The exact voltage drop will of course depend on the manufacturer because of the different dopant materials and
wavelengths used. As an LED is effectively a diode, its forward current to voltage characteristics curves can be
plotted for each diode colour as shown below.
Circuit Diagram:
MSIT/ECE/Electronic Devices laboratory/
EC391/EX-5
Procedure:
3. Requirement:
Apparatus:
DC Power Supply
Voltmeter (0-20) V/Multimeter
Ammeter (0-50) mA
Component:
L.E.D
Resistor 560 ohm/1k
Calculation:
6. Area of applications:
Knowledge can be applied to design LED circuit.
7. Question Banks:
What is the basic principle of LED?
Why SI is not used in LED?
What are the advantages of LED lights?
8. References:
G. Streetman, and S. K. Banerjee, “Solid State Electronic Devices,” 7th edition, Pearson,2014.
S. M. Sze and K. N. Kwok, “Physics of Semiconductor Devices,” 3rd edition, John Wiley & Sons, 2006.
Electronics fundamentals and application by D.Chattopadhyay & P.C.Rakshit, New Age International Publishers.
Advanced electronic practical book by A.B.Bhattacharya New Central Book Agency(P) Ltd.
MSIT/ECE/Electronic Devices laboratory/
EC391/EX-6
Experiment No: 6
Name of the Experiment: Study of LDR and it’s application as switch.
1A.Course Outcome: The students will be able to show properties of photoelectric devices.
(C391.5)
1B. Objective: To study the characteristics of LDR.
2. Theory:
A Light Dependent Resistor (LDR) is also called a photoresistor or a cadmium sulfide (CdS) cell. It is also called
a photoconductor. It is basically a photocell that works on the principle of photoconductivity. When the light is
absorbed by the material then the conductivity of the material enhances. When the light falls on the LDR, then the
electrons in the valence band of the material are eager to the conduction band. The passive component is basically
a resistor whose resistance value decreases when the intensity of light decreases.
This optoelectronic device is mostly used in light varying sensor circuit, and light and dark activated switching
circuits. Some of its applications include camera light meters, street lights, light beam alarms, reflective smoke
alarms, and outdoor clocks.
MSIT/ECE/Electronic Devices laboratory/
EC391/EX-6
Circuit Diagram:
Procedure:
3. Requirement:
Apparatus:
DC Power Supply
Voltmeter (0-2) V/Multimeter
Ammeter (0-50) mA
Component:
L.D.R
Resistor 1k
Calculation:
6. Area of applications:
7. Question Banks:
What is the basic principle of LDR?
What are the advantages of LDR?
8. References:
G. Streetman, and S. K. Banerjee, “Solid State Electronic Devices,” 7th edition, Pearson,2014.
S. M. Sze and K. N. Kwok, “Physics of Semiconductor Devices,” 3rd edition, John Wiley & Sons, 2006.
Electronics fundamentals and application by D.Chattopadhyay & P.C.Rakshit, New Age International Publishers.
Advanced electronic practical book by A.B.Bhattacharya New Central Book Agency(P) Ltd.
MSIT/Eelectronic devices laboratory/
EC391/EX-6
Experiment No: 6
Name of the Experiment: Study of I-V characteristics of BJT in common base mode.
1A.Course Outcome: The students will be able to apply the characteristics of BJT to design self bias circuit
(EC391.4).
1B. Objective:
To Study the Input & Output Characteristics of Transistor in common base configuration.
Calculate the value of input and output resistance of a CB connected transistor.
Calculate the current amplification factor α. for the CB connected transistor.
2. Theory:
In common base configuration the base is common to both the input and output circuit hence the name common
base configuration. The input characteristic in a common base configuration is a plot between V EB and IE at
constant VCB. The input characteristic represents that of a forward biased p-n junction diode with very low input
impedance. The output characteristic in a CB configuration is a plot of V CB and IC at constant IE. In the output
characteristics IC varies with VCB at very low voltages and after that becomes almost constant thus showing that
output impedance is high. The current amplification factor in case of CB connected transistor is below 1. Typical
graph for input and output characteristics of CB mode transistor configuration is shown below.
MSIT/Eelectronic devices laboratory/
EC391/EX-6
Circuit Diagram:
Procedure:
Connect the apparatus and components as per the circuit diagram.
The circuit to be checked by the teacher.
For the input characteristics set VCB constant at 2V and then at 4V and vary the input supply and observe
the changes in IE.
For the output characteristics set IE constant at 10mA and then at 15mA and then vary the output supply
to observe the changes in VCB and IC.
Plot the input and output characteristics in cm graph paper.
3. Requirement:
Apparatus:
DC Power Supply
Voltmeter (0-20) V
Ammeter (0-50) mA
MSIT/Eelectronic devices laboratory/
EC391/EX-6
Component:
Transistor(BC107)
Resistor (1kΩ)
Serial No. Emitter- Base voltage(VEB) (in Emitter current(IE) (in Value of VCB(in Volt)
Volt) mA)
2V
4V
Serial No. Collector-Base Voltage(VCB) (in Volt) Collectorcurrent(IC) (in mA) Value of IE(in mA)
10mA
MSIT/Eelectronic devices laboratory/
EC391/EX-6
15mA
Calculation:
Input resistance = ∂VEB/ ∂IE (At const VCB)
Current amplification factor α= IC /IE
6. Area of applications:
Knowledge can be applied to design amplifier circuit.
7. Question Banks:
Why transistor is called transistor?
Is transistor a current control device or a voltage control device?
Define current gain of the transistor in CB configuration. What is the DC current gain you obtain in this
practical?
8. References:
G. Streetman, and S. K. Banerjee, “Solid State Electronic Devices,” 7th edition, Pearson,2014.
S. M. Sze and K. N. Kwok, “Physics of Semiconductor Devices,” 3rd edition, John Wiley & Sons, 2006.
Electronics fundamentals and application by D.Chattopadhyay & P.C.Rakshit, New Age International Publishers.
Advanced electronic practical book by A.B.Bhattacharya New Central Book Agency(P) Ltd.
MSIT/ECE/ Electronic devices laboratory/
EC391/EX-8
Experiment No:8
Name of the Experiment: Study of Characteristic curves for CE mode transistors.
1A.Course Outcome: Students will be able to apply the characteristics of BJT to design self bias circuit
(C391.4).
1B. Objective:
To Study the Input & Output Characteristics of Transistor in CE mode configuration.
Calculate the value of input and output resistance of a transistor in CE mode configuration.
Calculate the current amplification factor of a transistor in CE mode configuration.
2. Theory:
CE mode configuration:
In a BJT, the emitter-base junction is forward biased so that the impedance of the emitter circuit is low and a
current flows between the emitter and the base. A change in the emitter current produces a change in the collector
current, giving the transistor action. The input characteristics for a given configuration refer to the plot of input
current vs. input voltage with the output voltage as a parameter.
In CE configuration input current and output voltage are taken as independent variables, whereas the input voltage
and output current are taken as dependent variable. Here the input current is base current IB and input voltage is
base emitter voltage VBE. Thus the input characteristic for the CE configuration is the plot of I B versus VBE with
VCE as a parameter. Normally the base emitter junction is biased in forward direction so the input characteristic
curve is similar to the forward characteristic curve of a diode. The input characteristic of a typical transistor is
shown the figure below.
MSIT/ECE/ Electronic devices laboratory/
EC391/EX-8
Here the output current is collector current IC and output voltage is collector emitter voltage VCE. Thus the Output
characteristic for the CE configuration is the plot of VCE versus IC with IB as a parameter. The output
characteristics curve can be divided into three distinct regions, namely the active region, the saturation region, and
the cutoff region.
The output characteristic of a typical transistor connected in CE mode is shown the figure below.
Circuit Diagram:
MSIT/ECE/ Electronic devices laboratory/
EC391/EX-8
Procedure:
3. Requirement:
Serial No. Base-Emitter Voltage(VBE) (in Base current(IB) (in Value of VCE(in Volt)
Volt) µA)
4V
8V
MSIT/ECE/ Electronic devices laboratory/
EC391/EX-8
12V
10 µA
20 µA
30 µA
Calculation:
Input impedance(CE mode)= ∆VBE/ ∆IB (At const VCE)
Current amplification factor β= IC /IE
6. Area of applications:
Knowledge can be applied to design amplifier circuit.
7. Question Banks:
What is the input impedance of BJT in CB configuration?
MSIT/ECE/ Electronic devices laboratory/
EC391/EX-8
8. References:
G. Streetman, and S. K. Banerjee, “Solid State Electronic Devices,” 7th edition, Pearson,2014.
S. M. Sze and K. N. Kwok, “Physics of Semiconductor Devices,” 3rd edition, John Wiley & Sons, 2006.
Electronics fundamentals and application by D.Chattopadhyay & P.C.Rakshit, New Age International Publishers.
Advanced electronic practical book by A.B.Bhattacharya New Central Book Agency(P) Ltd.
MSIT/ECE/Electronic Devices
Laboratory /EC391/EX-9
Lab Manual
Course Name: Electronic Devices Laboratory
Course Code: EC391
Experiment No: 9
1A.Course Outcome: Students will be able to discuss the characteristics of FET (EC391.5).
2. Theory:
Static Characteristic: The graphical plots of drain current (I d) against the drain to source voltage
(Vds) with gate-to-source voltage (Vgs) as constant are known as static characteristics of JFET.
Initially assume that Vgs is 0V. Then for a small applied voltage Vds the device acts like a
resistor and current increases linearly with the voltage. An unequal ohmic drop results with
increasing Vds. The drop is more near the drain compared to the source due to reverse bias, and so
the channel region gets restricted resulting in a constant current flow. This constant current is
termed as saturation current. The voltage at which the current Id saturates at the value Idss is
known as pinch-off voltage. If Vds is increased further the reverse voltage at this drain region
increases resulting in a breakdown. So the device is operated in three regions, i.e. as a resistor in
the ohmic resistance region, as a constant current in the active region and in breakdown region.
Transfer Characteristic: This relates the Vgs and Id for a constant Vds. When Vgs= 0V then for a
particular value of Vds Id is maximum. As Vgs is increased, Id decreases and finally becomes
zero due to the reduction in effective channel width, at which the device is said to be cut-off.
Typical drain and transfer characteristics curve for a n-channel JFET is shown in figure below.
MSIT/ECE/Electronic Devices
Laboratory /EC391/EX-9
Procedure:
Fix the voltage of Vgs by Power Supply.
Change Vds by Power Supply with suitable steps.
Take readings of Id at different values of Vds.
Repeat the same for next value of Vgs.
Circuit diagram:
MSIT/ECE/Electronic Devices
Laboratory /EC391/EX-9
3. Requirement:
DC regulated power supply (0-30)V
Voltmeter, Ammeter/ Digital Multimeter
Bread Board
BFW10
Resistors(10k,1k)
Connecting Wires
Cutter
4. Observations/Results:
Vds(V) Id(mA)
Vgs= 0V Vgs= -0.5V Vgs= -1.0V Vgs= -1.5V Vgs= -2.0V
Calculation:
Drain resistance rd
rd = ∆Vds/∆Id (at constant Vgs)
Transconductance gm
gm =∆Id/∆Vgs (at constant Vgs)
Amplification factor
µ = rd x gm (at constant ID)
6. Area of applications:
FET is an ideal device for use in almost every application in which transistors can be used. FETs
are widely used as input amplifiers in oscilloscopes, electronic voltmeters and other measuring
and testing equipment because of their high input impedance.
7. Question Banks:
8. References:
Experiment No:10
Name of the Experiment: Study of self bias BJT circuit.
1A.Course Outcome: The students will be able to apply the characteristics of BJT to design self bias circuit
(C391.4).
1B. Objective:
To Study the self bias circuit and measure the collector current under different load.
2. Theory:
The name self bias is coined because of the fact all the DC variations around Q-point tends to adjust itself. Here
the common emitter transistor configuration is biased using a voltage divider network to increase stability. The
name of this biasing configuration comes from the fact that the two resistors RB1 and RB2 form a voltage or
potential divider network across the supply with their center point junction connected the transistors base terminal
as shown.
This self bias or voltage divider biasing configuration is the most widely used transistor biasing method. The
emitter diode of the transistor is forward biased by the voltage value developed across resistor RB2. Also, voltage
divider network biasing makes the transistor circuit independent of changes in beta as the biasing voltages set at
the transistors base, emitter, and collector terminals are not dependant on external circuit values.
To calculate the voltage developed across resistor RB2 and therefore the voltage applied to the base terminal we
simply use the voltage divider formula for resistors in series.
Generally the voltage drop across resistor RB2 is much less than for resistor RB1. Clearly the transistors base
voltage VB with respect to ground, will be equal to the voltage across RB2.
The amount of biasing current flowing through resistor RB2 is generally set to 10 times the value of the required
base current IB so that it is sufficiently high enough to have no effect on the voltage divider current or changes in
Beta.
The goal of Transistor Biasing is to establish a known quiescent operating point, or Q-point for the bipolar
transistor to work efficiently and produce an undistorted output signal. Correct DC biasing of the transistor also
establishes its initial AC operating region with practical biasing circuits using either a two or four-resistor bias
network.
MSIT/ECE/Electronic Devices laboratory/
EC391/EX-10
In bipolar transistor circuits, the Q-point is represented by (VCE, IC ) for the NPN transistors or ( VEC, IC ) for PNP
transistors. The stability of the biasing network and therefore the Q-point is generally assessed by considering the
collector current as a function of both Beta (β) and temperature.
Circuit Diagram:
Procedure:
3. Requirement:
Calculation:
Assume I2>10IB ,VCC=16V,R1=22K,R2=4.7K,RC=2.2K,RE=560Ω,Transistor(2N2222)
VB=[R2/( R1+R2)]* VCC=
VE= VB -0.7V=
IE= VE/RE=
IC is near equal to IE
Therefore IC(calculated)=
6. Area of applications:
Knowledge can be applied to design amplifier circuit.
7. Question Banks:
What is the stability factor of transistor?
What is Q point?
Name the different type of biasing in BJT.
8. References:
G. Streetman, and S. K. Banerjee, “Solid State Electronic Devices,” 7th edition, Pearson,2014.
S. M. Sze and K. N. Kwok, “Physics of Semiconductor Devices,” 3rd edition, John Wiley & Sons, 2006.
Electronics fundamentals and application by D.Chattopadhyay & P.C.Rakshit, New Age International Publishers.
Advanced electronic practical book by A.B.Bhattacharya New Central Book Agency(P) Ltd.
MSIT/ECE/ELECTRONIC DEVICES
LAB/EC391/EX-11
Lab Manual
Course Name: ELECTRONIC DEVICES LABORATORY
Course Code: EC391
Experiment No: 11
1A.Course Outcome:
2. Theory: The basic structure of a resistive load inverter is shown in the figure given
below. Here, enhancement type nMOS acts as the driver transistor. The load consists of a
simple linear resistor RL. The power supply of the circuit is VDD and the drain current
ID is equal to the load current IR.
When the input of the driver transistor is less than threshold voltage V TH (Vin < VTH),
driver transistor is in the cut – off region and does not conduct any current. So, the
voltage drop across the load resistor is zero and output voltage is equal to the VDD. Now,
when the input voltage increases further, driver transistor will start conducting the non-
zero current and nMOS goes in saturation region.
The main advantage of using MOSFET as load device is that the silicon area occupied by
the transistor is smaller than the area occupied by the resistive load. Here, MOSFET is
active load and inverter with active load gives a better performance than the inverter with
resistive load.
Procedure:
Circuit diagram:
MSIT/ECE/ELECTRONIC DEVICES
LAB/EC391/EX-11
3. Requirement:
DC power supply (5V)
Function Generator
Bread Board
IRF540
Resistor(1k)
Connecting Wires
Cutter
4. Observations/Results:
SL NO Input Voltage Output Voltage
Calculation:
7. Question Banks:
8. References:
G. Streetman, and S. K. Banerjee, “Solid State Electronic Devices,” 7th edition,
Pearson,2014.
S. M. Sze and K. N. Kwok, “Physics of Semiconductor Devices,” 3rd edition, John Wiley
& Sons, 2006.
Electronics fundamentals and application by D.Chattopadhyay & P.C.Rakshit, New Age
International Publishers.
Advanced electronic practical book by A.B.Bhattacharya New Central Book Agency(P) Ltd.
MSIT/ECE/ELECTRONIC DEVICES
LAB/EC391/EX-12
Lab Manual
Course Name: ELECTRONIC DEVICES LABORATORY
Course Code: EC391
Experiment No: 12
Name of the experiment: Logic Gates using BJT (Innovative Experiment).
1A.Course Outcome:
1B. Objective:
2. Theory: The use of transistors for the construction of logic gates depends upon their
utility as fast switches. When the base-emitter diode is turned on enough to be driven into
saturation, the collector voltage with respect to the emitter may be near zero and can be
used to construct gates for the TTL logic family.
AND, OR, NOT are called basic gates as their logical operation cannot be simplified
further.
Name of the Symbol Boolean Truth table
Gate Expression
NOT yA A Y
0 1
1 0
AND y A.B A B Y
0 0 0
0 1 0
1 0 0
1 1 1
OR y A B A B Y
0 0 0
0 1 1
1 0 1
1 1 1
MSIT/ECE/ELECTRONIC DEVICES
LAB/EC391/EX-12
Procedure:
Circuit Diagram:
NOT GATE
MSIT/ECE/ELECTRONIC DEVICES
LAB/EC391/EX-12
OR GATE
AND GATE
3. Requirement:
TAT-01 Kit
Multimeter
4. Observations/Results:
NOT GATE
Input Output(L.L) Output(L.V)
MSIT/ECE/ELECTRONIC DEVICES
LAB/EC391/EX-12
OR GATE
Input1 Input2 Output(L.L) Output(L.V)
AND GATE
Input1 Input2 Output(L.L) Output(L.V)
Calculation:
7. Question Banks:
8. References: