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    Lecture 2 VLSI Technology

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    J.V.'S CLASS
    The document summarizes the key processing steps required to realize a bipolar junction transistor (BJT) in VLSI technology. The steps include: 1) crystal growth on a p-type silicon substrate, 2) oxidation to grow silicon dioxide, 3) photolithography to define regions, 4) diffusion of n-type and p-type dopants to form the collector, base and emitter regions, 5) epitaxial growth of n-type silicon, 6) metallization to form contacts to the collector, base and emitter using masks and selective deposition of metal. The document emphasizes that isolation between transistors is achieved using reverse biased pn junctions and that formation of the base precedes the emitter to allow

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    Lecture 2 VLSI Technology

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    J.V.'S CLASS
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    The document summarizes the key processing steps required to realize a bipolar junction transistor (BJT) in VLSI technology. The steps include: 1) crystal growth on a p-type silicon substrate, 2) oxidation to grow silicon dioxide, 3) photolithography to define regions, 4) diffusion of n-type and p-type dopants to form the collector, base and emitter regions, 5) epitaxial growth of n-type silicon, 6) metallization to form contacts to the collector, base and emitter using masks and selective deposition of metal. The document emphasizes that isolation between transistors is achieved using reverse biased pn junctions and that formation of the base precedes the emitter to allow

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    VLSI Lecture 2

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    The document summarizes the key processing steps required to realize a bipolar junction transistor (BJT) in VLSI technology. The steps include: 1) crystal growth on a p-type silicon substrate, 2) oxidation to grow silicon dioxide, 3) photolithography to define regions, 4) diffusion of n-type and p-type dopants to form the collector, base and emitter regions, 5) epitaxial growth of n-type silicon, 6) metallization to form contacts to the collector, base and emitter using masks and selective deposition of metal. The document emphasizes that isolation between transistors is achieved using reverse biased pn junctions and that formation of the base precedes the emitter to allow

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    44 views19 pages

    Lecture 2 VLSI Technology

    Uploaded by

    J.V.'S CLASS
    The document summarizes the key processing steps required to realize a bipolar junction transistor (BJT) in VLSI technology. The steps include: 1) crystal growth on a p-type silicon substrate, 2) oxidation to grow silicon dioxide, 3) photolithography to define regions, 4) diffusion of n-type and p-type dopants to form the collector, base and emitter regions, 5) epitaxial growth of n-type silicon, 6) metallization to form contacts to the collector, base and emitter using masks and selective deposition of metal. The document emphasizes that isolation between transistors is achieved using reverse biased pn junctions and that formation of the base precedes the emitter to allow

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    VLSI Technology

    Lecture 2

    VLSI process for BJT

    Dr. Brajendra Singh Sengar (PhD, IIT Indore)


    Assistant Professor
    Department of Electronics and Communication Engineering
    National Institute of Technology Srinagar
    Email id: [email protected]
    VLSI Technology

    BJT
    • High speed

    MOSFET
    • High density

    BICMOS
    BJT
    Processing steps required to realize BJT

    Substrate p-
    type,(111), 10 1. Crystal
    ohm-cm for
    2. Oxidation
    Growth
    npn BJT

    What do these things tell us


    2. Oxidation
    Silicon is • Very easy to oxidize.
    desirable • Very good masking properties.
    material for IC
    ??
    3.
    Photolithography

    Bring this coated


    Subject to
    Photoresist on substrate in
    radiation (UV
    entire substrate contact with
    etc.)
    MASK
    After Lithography

    Photoresist
    Sio2

    This is called the opening of a window in the oxide.


    Mask Design
    Its buried layer diffusion, in general diffusion.
    4. Diffusion

    N+ N+
    5. Epitaxy

    collector

    N type epitaxy

    N+
    P

    P type Substarte
    Isolation not a Million of transistor. Can all collector sorted
    step but concept
    for isolation in IC The oldest technology to realize this isolation
    between transistors uses a reverse biased pn
    junction

    P+ N type epitaxy P+ N type epitaxy P+

    N+P N+
    P

    P type Substarte P type Substarte

    -Ve
    It is very important that doping comes all the way to the p-type substrate.

    To selectively diffuse p + regions, we must have oxidation, photolithography and diffusion and
    the mask.
    Mask Design P+ N type epitaxy N type epitaxy P+
    P+

    N+P N+
    P

    P type Substarte P type Substarte

    -Ve
    The base is doped earlier than the emitter because the
    emitter is more highly doped than the base.
    Base formation

    P
    P+ P+
    N type epitaxy

    N+P

    P type Substarte

    Obviously, the base p region is located within the active region mask.
    Mask for
    Base

    base located within the active region mask. Only that portion is transparent
    when you are going to have the mask for the base.
    Emitter formation

    N+
    P
    P+ P+
    N type epitaxy

    N+P

    P type Substarte
    Mask for
    Emitter
    Ohmic • Collector is lightly doped.
    • so to reduce the contact resistance (to make ohmic). the usual
    contact with practice is to have a small pocket of n+ diffusion for collector
    collector contact.
    • This needs no extra step. This can be done along with the emitter
    diffusion.

    N+ N+
    P
    P+ P+
    N type epitaxy

    N+P

    P type Substarte
    To establish contact with the outside world that is done by
    a technique called contact metallization.
    6. Metallization
    selective deposition of metal over the base, emitter and
    collector region. Selective means must have
    photolithography.

    C E
    B
    N+ N+
    P
    P+ P+
    N type epitaxy

    N+P

    P type Substarte
    General Metal Al:
    • Group III element, make p p+ easy to make ohmic
    6. Metallization contact with player.
    • Difficult to make ohmic contact with n-type so that is
    why n+needed.
    Thanks

    19

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