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Lecture 2 VLSI Technology

The document summarizes the key processing steps required to realize a bipolar junction transistor (BJT) in VLSI technology. The steps include: 1) crystal growth on a p-type silicon substrate, 2) oxidation to grow silicon dioxide, 3) photolithography to define regions, 4) diffusion of n-type and p-type dopants to form the collector, base and emitter regions, 5) epitaxial growth of n-type silicon, 6) metallization to form contacts to the collector, base and emitter using masks and selective deposition of metal. The document emphasizes that isolation between transistors is achieved using reverse biased pn junctions and that formation of the base precedes the emitter to allow

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71 views19 pages

Lecture 2 VLSI Technology

The document summarizes the key processing steps required to realize a bipolar junction transistor (BJT) in VLSI technology. The steps include: 1) crystal growth on a p-type silicon substrate, 2) oxidation to grow silicon dioxide, 3) photolithography to define regions, 4) diffusion of n-type and p-type dopants to form the collector, base and emitter regions, 5) epitaxial growth of n-type silicon, 6) metallization to form contacts to the collector, base and emitter using masks and selective deposition of metal. The document emphasizes that isolation between transistors is achieved using reverse biased pn junctions and that formation of the base precedes the emitter to allow

Uploaded by

J.V.'S CLASS
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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VLSI Technology

Lecture 2

VLSI process for BJT

Dr. Brajendra Singh Sengar (PhD, IIT Indore)


Assistant Professor
Department of Electronics and Communication Engineering
National Institute of Technology Srinagar
Email id: [email protected]
VLSI Technology

BJT
• High speed

MOSFET
• High density

BICMOS
BJT
Processing steps required to realize BJT

Substrate p-
type,(111), 10 1. Crystal
ohm-cm for
2. Oxidation
Growth
npn BJT

What do these things tell us


2. Oxidation
Silicon is • Very easy to oxidize.
desirable • Very good masking properties.
material for IC
??
3.
Photolithography

Bring this coated


Subject to
Photoresist on substrate in
radiation (UV
entire substrate contact with
etc.)
MASK
After Lithography

Photoresist
Sio2

This is called the opening of a window in the oxide.


Mask Design
Its buried layer diffusion, in general diffusion.
4. Diffusion

N+ N+
5. Epitaxy

collector

N type epitaxy

N+
P

P type Substarte
Isolation not a Million of transistor. Can all collector sorted
step but concept
for isolation in IC The oldest technology to realize this isolation
between transistors uses a reverse biased pn
junction

P+ N type epitaxy P+ N type epitaxy P+

N+P N+
P

P type Substarte P type Substarte

-Ve
It is very important that doping comes all the way to the p-type substrate.

To selectively diffuse p + regions, we must have oxidation, photolithography and diffusion and
the mask.
Mask Design P+ N type epitaxy N type epitaxy P+
P+

N+P N+
P

P type Substarte P type Substarte

-Ve
The base is doped earlier than the emitter because the
emitter is more highly doped than the base.
Base formation

P
P+ P+
N type epitaxy

N+P

P type Substarte

Obviously, the base p region is located within the active region mask.
Mask for
Base

base located within the active region mask. Only that portion is transparent
when you are going to have the mask for the base.
Emitter formation

N+
P
P+ P+
N type epitaxy

N+P

P type Substarte
Mask for
Emitter
Ohmic • Collector is lightly doped.
• so to reduce the contact resistance (to make ohmic). the usual
contact with practice is to have a small pocket of n+ diffusion for collector
collector contact.
• This needs no extra step. This can be done along with the emitter
diffusion.

N+ N+
P
P+ P+
N type epitaxy

N+P

P type Substarte
To establish contact with the outside world that is done by
a technique called contact metallization.
6. Metallization
selective deposition of metal over the base, emitter and
collector region. Selective means must have
photolithography.

C E
B
N+ N+
P
P+ P+
N type epitaxy

N+P

P type Substarte
General Metal Al:
• Group III element, make p p+ easy to make ohmic
6. Metallization contact with player.
• Difficult to make ohmic contact with n-type so that is
why n+needed.
Thanks

19

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