Chapter 4

VCC  VBE 16 V  0.7 V 15.3 V

1. (a) I BQ    = 30 A
RB 510 k 510 k

(b) I CQ   I BQ = (120)(30 A) = 3.6 mA

(c) VCEQ  VCC  I CQ RC = 16 V  (3.6 mA)(1.8 k) = 9.52 V

(d) VC = VCEQ = 6.48 V

(e) VB = VBE = 0.7 V

(f) VE = 0 V

2. (a) IC = IB = 80(40 A) = 3.2 mA

VRC VCC  VC 12 V  6 V 6V
(b) RC =    = 1.875 k
IC IC 3.2 mA 3.2 mA

VRB 12 V  0.7 V 11.3 V

(c) RB =   = 282.5 k
IB 40  A 40  A

(d) VCE = VC = 6 V

3. (a) IC = IE  IB = 4 mA  20 A = 3.98 mA  4 mA
(b) VCC = VCE + ICRC = 7.2 V + (3.98 mA)(2.2 k)
= 15.96 V  16 V
I C 3.98 mA
(c)  =  = 199  200
IB 20  A

VRB VCC  VBE 15.96 V  0.7 V

(d) RB =   = 763 k
IB IB 20  A

VCC 16 V
4. I Csat =  = 5.93 mA
RC 2.7 k

21 V
5. (a) Load line intersects vertical axis at IC = = 7 mA
3 k
and horizontal axis at VCE = 21 V.
VCC  VBE 21 V  0.7 V
(b) IB = 25 A: RB =  = 812 k
IB 25  A

(c) I CQ  3.4 mA, VCEQ  10.75 V

34
 I C 3.4 mA
(d)  =  = 136
IB 25  A

 136 136
(e)  =   = 0.992
  1 136  1 137
VCC 21 V
(f) I Csat =  = 7 mA
RC 3 k

(g) 
(h) PD = VCEQ I CQ = (10.75 V)(3.4 mA) = 36.55 mW

(i) Ps = VCC(IC + IB) = 21 V(3.4 mA + 25 A) = 71.92 mW

(j) PR = Ps  PD = 71.92 mW  36.55 mW = 35.37 mW

VCC  VBE 16 V  0.7 V

6. (b) I BQ   = 30 µA
RB 510 k
VCEQ = 8.5 V, I CQ = 4.1 mA

I C 4.1 mA
(c)  =  = 136.67
IB 30  A

16 V  0.7 V
7. I BQ  = 16.81 µA
910 k
I CQ   I BQ = (120)(16.81 µA) = 2.017 mA
(from characteristics) VEQ = 11.5 V, I CQ = 2.4 mA

VCC  VBE 20 V  0.7 V 19.3 V

8. (a) I BQ   =
RB  (  1) RE 270 k  (126)2.2 k 547.2 k
= 35.27 A

(b) I CQ   I BQ = (125)(35.27 A) = 4.41 mA

(c) VCEQ = VCC  IC(RC + RE) = 20 V  (4.41 mA)(470 k + 2.2 k)

= 20 V  11.77 V
= 8.23 V

(d) VC = VCC  ICRC = 20 V  (4.41 mA)(470 k) = 20 V  2.07 V

= 17.93 V

(e) VB = VCC  IBRB = 20 V  (35.27 A)(270 k)

= 20 V  9.52 V = 10.48 V

(f) VE = VC  VCE = 17.93 V  8.23 V = 9.7 V

35
9. (a) I BQ = 35.27 µA using  from problem 8.
20 V
I sat = = 7.49 mA
2.2 k  470 

(b) I CQ = 4.7 mA, VCEQ = 7.5 V

IC 4.7 mA
(c)   = 133.25
I B 35.27  A

(d) reasonably close

(e) different  and Q pt.

VCC  VC 12 V  7.6 V 4.4 V

10. (a) RC =   = 2.2 k
IC 2 mA 2 mA

VE 2.4 V
(b) IE  IC: RE =  = 1.2 k
I E 2 mA

VRB VCC  VBE  VE 12 V  0.7 V  2.4 V 8.9 V

(c) RB =    = 356 k
IB IB 2 mA/80 25  A

(d) VCE = VC  VE = 7.6 V  2.4 V = 5.2 V

(e) VB = VBE + VE = 0.7 V + 2.4 V = 3.1 V

VE 2.1 V
11. (a) IC  IE =  = 3.09 mA
RE 0.68 k
I C 3.09 mA
=  = 154.5
IB 20  A
(b) VCC = VRC + VCE + VE
= (3.09 mA)(2.7 k) + 7.3 V + 2.1 V = 8.34 V + 7.3 V + 2.1 V
= 17.74 V

VRB VCC  VBE  VE 17.74 V  0.7 V  2.1 V

(c) RB =  
IB IB 20  A
14.94 V
= = 747 k
20  A

VCC 20 V 20 V
12. I Csot    = 7.49 mA
RC  RE 470   2.2 k 2.67 k

36
 VCC 24 V
13. (a) I Csat = 6.8 mA = 
RC  RE RC  1.2 k
24 V
RC + 1.2 k = = 3.529 k
6.8 mA
RC = 2.33 k

IC 4 mA
(b)  =  = 133.33
I B 30  A

VRB VCC  VBE  VE 24 V  0.7 V  (4 mA)(1.2 k)

(c) RB =  
IB IB 30  A
18.5 V
= = 616.67 k
30  A

(d) PD = VCEQ I CQ
= (10 V)(4 mA) = 40 mW

(e) P = I C2 RC = (4 mA)2(2.33 k)

= 37.28 mW

14. (a) Problem 1: I CQ = 3.6 mA, VCEQ = 6.48 V

(b) I BQ = 30 A (the same)

I CQ   I BQ = (180)(30 A) = 5.4 mA
VCEQ  VCC  I CQ RC = 16 V  (5.4 mA)(1.8 k) = 6.28 V

5.4 mA  3.6 mA
(c) %IC =  100% = 50%
3.6 mA
9.52 V  6.28 V
%VCE =  100% = 51.6%
6.28 V
About 50% change for each.
(d) Problem 8: I CQ = 4.41 mA, VCEQ = 8.23 V ( I BQ = 35.27 A)

VCC  VBE 20 V  0.7 V

(e) I BQ   = 28.19 A
RB  (  1) RE 270 k  (187.5  1)(2.2 k)
I CQ   I BQ = (187.5)(28.19 A) = 5.29 mA
= VCC  IC(RC + RE)
= 20 V  (5.29 mA)(470 k + 2.2 k) = 5.88 V

37
 5.29 mA  4.41 mA
(f) %IC =  100% = 20%
4.41 mA
5.88 V  8.23 V
%VCE =  100% = 28.6%
8.23 V
(g) For both IC and VCE the % change is less for the emitter-stabilized.

?
15. RE  10R2
(80)(0.68 k)  10(9.1 k)
54.4 k  91 k (No!)
(a) Use exact approach:
RTh = R1  R2 = 62 k  9.1 k = 7.94 k
RV (9.1 k)(16 V)
ETh = 2 CC  = 2.05 V
R2  R1 9.1 k  62 k
ETh  VBE 2.05 V  0.7 V
I BQ  
RTh  (  1) RE 7.94 k  (81)(0.68 k)
= 21.42 A
(b) I CQ   I BQ = (80)(21.42 A) = 1.71 mA

(c) VCEQ = VCC  I CQ (RC + RE)

= 16 V  (1.71 mA)(3.9 k + 0.68 k)
= 8.17 V
(d) VC = VCC  ICRC
= 16 V  (1.71 mA)(3.9 k)
= 9.33 V
(e) VE = IERE  ICRE = (1.71 mA)(0.68 k)
= 1.16 V
(f) VB = VE + VBE = 1.16 V + 0.7 V
= 1.86 V

16. (a) RTh  62 k  9.1 k = 7.94 k

9.1 k(16 V)
ETh  = 2.05 V
9.1 k + 62 k
ETh  VBE 2.05 V  0.7 V
I BQ  
RTh  (  1) RE 7.94 k  (140  1)(0.68 k)
= 13 μA (vs. 21.42 μA)
I CQ   I BQ = (140)(13 A) = 1.82 mA (vs. 1.71 mA)
VCEQ = VCC  I CQ (RC + RE)
= 16 V  (1.82 mA)(3.9 k + 0.68 k)
= 7.66 V (vs. 8.17 V)

38
 VC = VCC  ICRC
= 16 V  (1.82 mA)(3.9 k)
= 8.9 V (vs. 9.33 V)
VE = IERE  ICRE = (1.82 mA)(0.68 k)
= 1.24 V (vs. 1.16 V)
VB = VE + VBE = 1.24 V + 0.7 V
= 1.94 V (vs. 1.86 V)

(b) I BQ affected the most

VCC  VC 18 V  12 V
17. (a) IC =  = 1.28 mA
RC 4.7 k

(b) VE = IERE  ICRE = (1.28 mA)(1.2 k) = 1.54 V

(c) VB = VBE + VE = 0.7 V + 1.54 V = 2.24 V

VR1
(d) R1 = : VR1 = VCC  VB = 18 V  2.24 V = 15.76 V
I R1
VB 2.24 V
I R1  I R2   = 0.4 mA
R2 5.6 k
VR1 15.76 V
R1 = = = 39.4 k
I R1 0.4 mA

18. (a) IC = IB = (100)(20 A) = 2 mA

(b) IE = IC + IB = 2 mA + 20 A
= 2.02 mA
VE = IERE = (2.02 mA)(1.2 k)
= 2.42 V

(c) VCC = VC + ICRC = 10.6 V + (2 mA)(2.7 k)

= 10.6 V + 5.4 V
= 16 V

(d) VCE = VC  VE = 10.6 V  2.42 V

= 8.18 V

(e) VB = VE + VBE = 2.42 V + 0.7 V = 3.12 V

(f) I R1  I R2  I B
3.12 V
= + 20 A = 380.5 A + 20 A = 400.5 A
8.2 k
V  VB 16 V  3.12 V
R1 = CC  = 32.16 k
I R1 400.5  A

39
 VCC 16 V 16 V
19. I Csat =  = = 3.49 mA
RC  RE 3.9 k  0.68 k 4.58 k

20. (a) Testing  RE  10 Rz

(140)(0.68 k )  10(9.1 k )
95.2 k  91 k satisfied (barely)

Applying the approximation approved:

RV (9.1 k)(16 V)
VB = 2 CC  = 2.05 V (vs. 1.95 V)
R1  R2 62 k  9.1 k
VE = VB  VBE = 2.05 V  0.7 V = 1.35 V (vs. 1.24 V)
V 1.35 V
IC  IE = E  = 1.99 mA (vs. 1.82 mA)
RE 0.68 k
VC = VCC  ICRC = 16 V  (1.99 mA)(3.9 k) = 8.24 V (vs 8.9 V)
VCE = VC  VE = 8.24 V  1.35 V = 6.89 V (vs 7.66 V)

21. (a) RE  10R2

(120)(1 k)  10(8.2 k)
120 k  82 k (checks)
RV (8.2 k)(18 V)
VB = 2 CC  = 3.13 V
R1  R2 39 k  8.2 k
VE = VB  VBE = 3.13 V  0.7 V = 2.43 V
V 2.43 V
IC  IE = E  = 2.43 mA
RE 1 k

(b) VCE = VCC  IC(RC + RE)

= 18 V  (2.43 mA)(3.3 k + 1 k)
= 7.55 V

IC 2.43 mA
(c) IB =  = 20.25 A
 120

(d) VE = IERE  ICRE = (2.43 mA)(1 k) = 2.43 V

(e) VB = 3.13 V

22. (a) RTh = R1  R2 = 39 k  8.2 k = 6.78 k

R V 8.2 k(18 V)
ETh = C CC  = 3.13 V
R1  R2 39 k  8.2 k
ETh  VBE 3.13 V  0.7 V
IB = 
RTh  (  1) RE 6.78 k  (121)(1 k)
2.43 V
= = 19.02 A
127.78 k
IC = IB = (120)(19.02 A) = 2.28 mA (vs. 2.43 mA #16)

40
 (b) VCE = VCC  IC(RC + RE) = 18 V  (2.28 mA)(3.3 k + 1 k)
= 18 V  9.8 V = 8.2 V (vs. 7.55 V #16)

(c) 19.02 A (vs. 20.25 A #16)

(d) VE = IERE  ICRE = (2.28 mA)(1 k) = 2.28 V (vs. 2.43 V #16)

(e) VB = VBE + VE = 0.7 V + 2.28 V = 2.98 V (vs. 3.13 V #16)

The results suggest that the approximate approach is valid if Eq. 4.33 is satisfied.

R2 9.1 k(16 V)
23. (a) VB = VCC  = 2.05 V
R1  R2 62 k  9.1 k
VE = VB  VBE = 2.05 V  0.7 V = 1.35 V
V 1.35 V
IE = E  = 1.99 mA
RE 0.68 k
I CQ  IE = 1.99 mA
VCEQ = VCC  IC (RC + RE)
= 16 V  (1.99 mA)(3.9 k + 0.68 k)
= 16 V  9.11 V
= 6.89 V
I CQ 1.99 mA
I BQ =  = 24.88 A
 80

(b) From Problem 12:

I CQ = 1.71 mA, VCEQ = 8.17 V, I BQ = 21.42 A

(c) The differences of about 14% suggest that the exact approach should be employed when
appropriate.

VCC 24 V 24 V
24. (a) I Csat  7.5 mA   
RC  RE 3RE  RE 4RE
24 V 24 V
RE =  = 0.8 k
4(7.5 mA) 30 mA

RC = 3RE = 3(0.8 k) = 2.4 k

(b) VE = IERE  ICRE = (5 mA)(0.8 k) = 4 V

(c) VB = VE + VBE = 4 V + 0.7 V = 4.7 V

RV R2 (24 V)
(d) VB = 2 CC , 4.7 V =
R2  R1 R2  24 k
R2 = 5.84 k
IC 5 mA
(e) dc =  = 129.8
I B 38.5  A

41
 (f) RE  10R2
(129.8)(0.8 k)  10(5.84 k)
103.84 k  58.4 k (checks)

25. (a) From problem 12b, IC = 1.71 mA

From problem 12c, VCE = 8.17 V

(b)  changed to 120:

From problem 12a, ETh = 2.05 V, RTh = 7.94 k
ETh  VBE 2.05 V  0.7 V
IB = 
RTh  (  1) RE 7.94 k + (121)(0.68 k)
= 14.96 A
IC = IB = (120)(14.96 A) = 1.8 mA
VCE = VCC  IC(RC + RE)
= 16 V  (1.8 mA)(3.9 k + 0.68 k)
= 7.76 V

1.8 mA  1.71 mA
(c) % I C   100% = 5.26%
1.71 mA
7.76 V  8.17 V
% VCE   100% = 5.02%
8.17 V

(d) 11c 11f 20c

%IC 49.83% 34.59% 5.26%
%VCE 48.70% 46.76% 5.02%

Fixed-bias Emitter Voltage-

feedback divider

(e) Quite obviously, the voltage-divider configuration is the least sensitive to changes in .

26. (a) Problem 21: Approximation approach: I CQ = 2.43 mA, VCEQ = 7.55 V
Problem 22: Exact analysis: I CQ = 2.28 mA, VCEQ = 8.2 V
The exact solution will be employed to demonstrate the effect of the change of . Using
the approximate approach would result in %IC = 0% and %VCE = 0%.

Problem 22: ETh = 3.13 V, RTh = 6.78 k

ETH  VBE 3.13 V  0.7 V 2.43 V
IB =  
RTh  (  1) RE 6.78 k  (180  1)1 k 187.78 k
= 12.94 A
IC = IB = (180)(12.94 A) = 2.33 mA
VCE = VCC  IC(RC + RE) = 18 V  (2.33 mA)(3.3 k + 1 k)
= 7.98 V

42
 2.33 mA  2.28 mA
%IC =  100% = 2.19%
2.28 mA
7.98 V  8.2 V
%VCE =  100% = 2.68%
8.2 V

For situations where RE > 10R2 the change in IC and/or VCE due to significant change in
 will be relatively small.

%IC = 2.19% vs. 49.83% for problem 14.

%VCE = 2.68% vs. 48.70% for problem 14.

Voltage-divider configuration considerably less sensitive.

(b) The resulting %IC and %VCE will be quite small.

VCC  VBE 16 V  0.7 V

27. (a) IB = 
RB   ( RC  RE ) 270 k + (120)(3.6 k  1.2 k)
= 18.09 A

(b) IC = IB = (120)(18.09 A)

= 2.17 mA

(c) VC = VCC  ICRC

= 16 V  (2.17 mA)(3.6 k)
= 8.19 V

VCC  VBE 16 V  0.7 V

28. (a) I CQ   = 3.19 mA
RC  RE 3.6 k  1.2 k

(b) I CQ = 3.19 mA vs 2.17 mA (not too close)

(c) R   RC  RE  4.8 k , RF /  270 k /120  2.25 k

 R   2( RF / )

 (VCC  VBE ) VCC  VBE

(d) Yes, I CQ   I BQ  
RF   ( RC  RE ) RF /  RC  RE
VCC  VBE
For RC  RE  RF / , I CQ 
RC  RE

16 V  0.7 V
(e) I CQ  = 2.58 mA vs. 3.19 mA (much closer)
270 k
 3.6 k  1.2 k
240

43
 VCC  VBE 30 V  0.7 V
29. (a) IB =  = 12.47 A
RB   ( RC  RE ) 550 k  180(8.2 k  1.8 k)

IC = IB = (180)(12.47 A) = 2.24 mA

(b) VC = VCC  ICRC

= 30 V  (2.24 mA)(8.2 k) = 30 V  18.37 V = 11.63 V

(c) VE = IERE  ICRE = (2.24 mA)(1.8 k) = 4.03 V

(d) VCE = VCC  IC(RC + RE) = 30 V  (2.24 mA)(8.2 k + 1.8 k)

= 7.6 V

30. (a) R   RC  RE  8.2 k  1.8 k  10 k

RF /  550 k/180  3.06 k
R   3.27( RF / ) should be close

VCC  VBE 30 V  0.7 V

(b) I CQ   = 2.93 mA
RC  RE 8.2 k  1.8 k
I CQ = 2.93 mA relatively close to 2.24 mA

VCC  VBE 22 V  0.7 V

31. (a) IB = 
RB   ( RC  RE ) 470 k  (90)(9.1 k  9.1 k)
= 10.09 A
IC = IB = (90)(10.09 A) = 0.91 mA
VCE = VCC  IC(RC + RE) = 22 V  (0.91 mA)(9.1 k + 9.1 k)
= 5.44 V
VCC  VBE 22 V  0.7 V
(b)  = 135, IB = 
RB   ( RC  RE ) 470 k  (135)(9.1 k  9.1 k)
= 7.28 A

IC = IB = (135)(7.28 A) = 0.983 mA

VCE = VCC  IC(RC + RE) = 22 V  (0.983 mA)(9.1 k + 9.1 k)
= 4.11 V

0.983 mA  0.91 mA
(c) % I C   100% = 8.02%
0.91 mA
4.11 V  5.44 V
% VCE   100% = 24.45%
5.44 V

(d) The results for the collector feedback configuration are closer to the voltage-divider
configuration than to the other two. However, the voltage-divider configuration
continues to have the least sensitivities to change in .

44
32. 1 M = 0 , RB = 150 k
VCC  VBE 12 V  0.7 V
IB = 
RB   ( RC  RE ) 150 k  (180)(4.7 k  3.3 k)
= 7.11 A
IC = IB = (180)(7.11 A) = 1.28 mA
VC = VCC ICRC = 12 V  (1.28 mA)(4.7 k)
= 5.98 V

Full 1 M: RB = 1,000 k + 150 k = 1,150 k = 1.15 M

VCC  VBE 12 V  0.7 V
IB = 
RB   ( RC  RE ) 1.15 M  (180)(4.7 k  3.3 k)
= 4.36 A
IC = IB = (180)(4.36 A) = 0.785 mA
VC = VCC  ICRC = 12 V  (0.785 mA)(4.7 k)
= 8.31 V
VC ranges from 5.98 V to 8.31 V

33. (a) VE = VB  VBE = 4 V  0.7 V = 3.3 V

VE 3.3 V
(b) IC  IE =  = 2.75 mA
RE 1.2 k

(c) VC = VCC  ICRC = 18 V  (2.75 mA)(2.2 k)

= 11.95 V

(d) VCE = VC  VE = 11.95 V  3.3 V = 8.65 V

VRB VC  VB 11.95 V  4 V
(e) IB =   = 24.09 A
RB RB 330 k

IC 2.75 mA
(f) =  = 114.16
I B 24.09  A

VCC  VEE  VBE 6 V + 6 V  0.7 V

34. (a) IB = 
RB  (  1) RE 330 k  (121)(1.2 k)
= 23.78 A
IE = ( + 1)IB = (121)(23.78 A)
= 2.88 mA
VEE + IERE  VE = 0
VE = VEE + IERE = 6 V + (2.88 mA)(1.2 k)
= 2.54 V

45
 82 k(12 V)
35. (a) VB  = 9.46 V
82 k  22 k
VE  VB  VBE = 9.46 V  0.7 V = 8.76 V
V 8.76 V
IE = E  = 7.3 mA
RE 1.2 k
IE 7.3 mA
IB =  = 65.77 μA
 1 111
I C   I B  (110)(65.77  A) = 7.23 mA

(b) VB  9.46 V, VC = 12 V, VE = 8.76 V

(c) VBC = VB  VC = 9.46 V  12 V = 2.54 V

VCE = VC  VE = 12 V  8.76 V = 3.24 V

VEE  VBE 12 V  0.7 V

36. (a) IB = 
RB  (  1) RE 9.1 k  (80  1)15 k
= 9.26 A

(b) IC = IB = (80)(9.26 A) = 0.741 mA

(c) VCE = VCC + VEE  IC(RC + RE)

= 16 V + 12 V  (0.741 mA)(27 k)
=8V

(d) VC = VCC  ICRC = 16 V  (0.741 mA)(12 k) = 7.11 V

8 V  0.7 V 7.3 V
37. (a) IE =  = 3.32 mA
2.2 k 2.2 k

(b) VC = 10 V  (3.32 mA)(1.8 k) = 10 V  5.976

= 4.02 V

(c) VCE = 10 V + 8 V  (3.32 mA)(2.2 k + 1.8 k)

= 18 V  13.28 V
= 4.72 V

38. (a) VE = 4 V  0.7 V = 3.3 V

V V 3.3 V
IE = E  E  = 3 mA
RE RE 1.1 k
IC  IE = 3 mA
VC = 8 V = VCC  ICRC = 14 V  (3 mA)RC
RC = 2 k

IE 3 mA
(b) IE = 3 mA, IB =  = 32.97 μA
 1 91

46
 (c) VBC = VB  VC = 4 V  8 V = 4 V
VCE = VC  VE = 8 V  3.3 V = 4.7 V

39. (a) RE > 10R2 not satisfied Use exact approach:
Network redrawn to determine the Thevenin equivalent:

510 k
RTh = = 255 k
2
18 V + 18 V
I= = 35.29 A
510 k  510 k
ETh = 18 V + (35.29 A)(510 k)
=0V
18 V  0.7 V
IB =
255 k  (130  1)(7.5 k)
= 13.95 A

(b) IC = IB = (130)(13.95 A) = 1.81 mA

(c) VE = 18 V + (1.81 mA)(7.5 k)

= 18 V + 13.58 V
= 4.42 V
(d) VCE = 18 V + 18 V  (1.81 mA)(9.1 k + 7.5 k)
= 36 V  30.05 V = 5.95 V

VRB VC  VBE 8 V  0.7 V

40. (a) IB =   = 13.04 A
RB RB 560 k

VCC  VC 18 V  8 V 10 V
(b) IC = =  = 2.56 mA
RC 3.9 k 3.9 k

IC 2.56 mA
(c)  =  = 196.32
I B 13.04  A

(d) VCE = VC = 8 V

47
 IC 2.5 mA
41. IB =  = 31.25 A
 80
VRB VCC  VBE 12 V  0.7 V
RB =   = 361.6 k
IB IB 31.25  A
VRC VCC  VC VCC  VCEQ 12 V  6 V 6V
RC =    
IC IC I CQ 2.5 mA 2.5 mA
= 2.4 k

Standard values:
RB = 360 k
RC = 2.4 k

VCC
42. I Csat = = 10 mA
RC  RE
20 V 20 V 20 V
= 10 mA  = 10 mA  5RE = = 2 k
4RE  RE 5 RE 10 mA
2 k
RE = = 400 
5
RC = 4RE = 1.6 k
I 5 mA
IB = C  = 41.67 A
 120
20 V  0.7 V  5 mA(0.4 k) 19.3  2 V
RB = VRB/IB = 
41.67  A 41.67  A
= 415.17 k
Standard values: RE = 390 , RC = 1.6 k, RB = 430 k

VE VE 3V
43. RE =   = 0.75 k
I E I C 4 mA
VRC VCC  VC VCC  (VCEQ  VE )
RC =  
IC IC IC
24 V  (8 V + 3 V) 24 V  11 V 13 V
=   = 3.25 k
4 mA 4 mA 4 mA
VB = VE + VBE = 3 V + 0.7 V = 3.7 V
RV R (24 V) 
VB = 2 CC  3.7 V = 2  2 unknowns!
R2  R1 R2  R1 
 use RE  10R2 for increased stability
(110)(0.75 k) = 10R2
R2 = 8.25 k
Choose R2 = 7.5 k

48
 Substituting in the above equation:
7.5 k(24 V)
3.7 V =
7.5 k  R1
R1 = 41.15 k
Standard values:
RE = 0.75 k, RC = 3.3 k, R2 = 7.5 k, R1 = 43 k

1 1
44. VE = VCC = (28 V) = 5.6 V
5 5
V 5.6 V
RE = E  = 1.12 k (use 1.1 k)
I E 5 mA
VCC 28 V
VC =  VE  + 5.6 V = 14 V + 5.6 V = 19.6 V
2 2
VRC = VCC  VC = 28 V  19.6 V = 8.4 V
VRC8.4 V
RC =  = 1.68 k (use 1.6 k)
IC 5 mA
VB = VBE + VE = 0.7 V + 5.6 V = 6.3 V
RV R (28 V)
VB = 2 CC  6.3 V = 2 (2 unknowns)
R2  R1 R2  R1
IC 5 mA
=  = 135.14
I B 37  A
RE = 10R2
(135.14)(1.12 k) = 10(R2)
R2 = 15.14 k (use 15 k)
(15.14 k)(28 V)
Substituting: 6.3 V =
15.14 k  R1
Solving, R1 = 52.15 k (use 51 k)

Standard values:
RE = 1.1 k
RC = 1.6 k
R1 = 51 k
R2 = 15 k

4.7 k(20 V)
45. (a) VB1  = 4.14 V
4.7 k  18 k
VE1 = 4.14 V  0.7 V = 3.44 V
3.44 V
I C1  I E1  = 3.44 mA
1 k
VC1  20 V  (3.44 mA)(2.2 k) = 12.43 V
3.3 k(20 V)
VB2  = 2.61 V
3.3 k  22 k
VE2 = 2.61 V  0.7 V = 1.91 V

49
 1.91 V
I E2  I C2  = 1.59 mA
1.2 k
VC2  20 V  (1.59 mA)(2.2 k) = 16.5 V

I C1 3.44 mA
(b) I B1   = 21.5 μA, I C1  I E1 = 3.44 mA
 160
I C2 1.59 mA
I B2   = 17.67 μA, I C2  I E2 = 1.59 mA
 90

46. (a)  D  12 = (50)(75) = 3750

VCC  VBE1  VBE2 18 V  0.7 V  0.7 V

(b) I B1  
RB  ( D  1) RE 2.2 M  (3750+1)470 
= 4.19 μA
I B2  (1  1) I B1 = (50 + 1)(4.19 µA) = 213.69 μA

(c) I C1  1 I B1 = (50)(4.19 µA) = 0.21 mA

I C2  2 I B2 = (75)(213.69 µA) = 16.03 mA

(d) VC1 = 18 V, VC2 = 18 V

VE2  I E RE  I C2 RE  (16.03 mA)(470 )
= 7.53 V
VE1  VE2 + 0.7 V = 7.53 V + 0.7 V = 8.23 V

3.3 k(22 V)
47. (a) VB1  = 4.48 V
3.3 k  4.7 k  8.2 k
VE1  VB1  0.7 V = 3.78 V
VE1 3.78 V
I E1  I E2  I C2  I C1   = 3.44 mA
RE 1.1 k
I C1
I B1  = 57.33 μA, I C1 = 3.44 mA
60
I C3
I B2  = 28.67 μA, I C2 = 3.44 mA
120

(b) VB1 = 4.48 V

(4.7 k  3.3 k)(22 V)
VB2  = 10.86 V
3.3 k  4.7 k  8.2 k
VE1 = 3.78 V, VC1  VB2  0.7 V = 10.16 V
VE@ = 10.16 V, VC2 = 22 V  (3.44 mA)(2 2 k) = 14.43 V

50
 VCC  VEB1 12 V  0.7 V
48. (a) I B1   = 2.45 μA
RB  1 2 RC 1.8 M  (80)(160)(220 )
I C1  1 I B1  (80)(2.45  A) = 196 μA
I B2  I C1 = 196 μA
I C2  2 I B2  (160)(196  A) = 31.36 mA

(b) VB1  I B1 RB  (2.45  A)(1.8 M) = 4.41 V

VE1  12 V  I C (220 )  12 V  (31.36 mA)(220 ) = 5.1 V
VB2  VBE2 = 0.7 V, VC2  VE1 = 5.1 V, VC1  VB2 = 0.7 V, VE2 = 0 V

18 V  0.7 V
49. I2 k = = 8.65 mA  I
2 k

50. For current mirror:

I(3 k) = I(2.4 k) = I = 2 mA

51. 6 V  I B RB  VBE  I E RE  0
6 V  I B 100 k  0.7 V  (  1) I B 1.2 k  0
6 V  0.7 V  I B (100 k  (120  1)(1.2 k))  0
6 V  0.7 V
IB  = 21.61 µA
100 k  145 k
I = I C   I B  (120)(21.61  A) = 2.59 mA

4.3 k
52. VB  (18 V) = 9 V
4.3 k  4.3 k
VE = 9 V  0.7 V = 9.7 V
18 V  (9.7 V)
IE = = 4.6 mA = I
1.8 k

VZ  VBE 5.1 V  0.7 V

53. IE =  = 3.67 mA
RE 1.2 k

VCC  VBE 12 V  0.7 V 11.3 V

54. IB =   = 22.16 A
RB 510 k 510 k
IC = IB = (100)(22.16 A) = 2.216 mA
VC = VCC + ICRC = 12 V + (2.216 mA)(3.3 k)
= 4.69 V
VCE = VC = 4.69 V

51
55. RE  10R2
(220)(0.75 k)  10(16 k)
165 k  160 k (checks)
Use approximate approach:

16 k(22 V)
VB  = 3.59 V
16 k + 82 k
VE = VB + 0.7 V = 3.59 V + 0.7 V = 2.89 V
IC  IE = VE/RE = 2.89/0.75 k = 3.85 mA
I 3.85 mA
IB = C  = 17.5 A
 220

VC = VCC + ICRC
= 22 V + (3.85 mA)(2.2 k)
= 13.53 V

V  VBE 8 V  0.7 V 7.3 V

56. IE =   = 2.212 mA
RE 3.3 k 3.3 k
VC = VCC + ICRC = 12 V + (2.212 mA)(3.9 k)
= 3.37 V

VCC 10 V
57. I Csat   = 4.167 mA
RC 2.4 k
From characteristics I Bmax  31 A
Vi  VBE 10 V  0.7 V
IB =  = 51.67 A
RB 180 k
51.67 A  31 A, well saturated

Vo = 10 V  (0.1 mA)(2.4 k)

= 10 V  0.24 V
= 9.76 V

52
 5V
58. I Csat = 8 mA =
RC
5V
RC = = 0.625 k
8 mA
IC 8 mA
I Bmax = sat  = 80 A
 100
Use 1.2 (80 A) = 96 A
5 V  0.7 V
RB = = 44.79 k
96  A

Standard values:
RB = 43 k
RC = 0.62 k

59. (a) From Fig. 3.23c:

IC = 2 mA: tf = 38 ns, tr = 48 ns, td = 120 ns, ts = 110 ns
ton = tr + td = 48 ns + 120 ns = 168 ns
toff = ts + tf = 110 ns + 38 ns = 148 ns

(b) IC = 10 mA: tf = 12 ns, tr = 15 ns, td = 22 ns, ts = 120 ns

ton = tr + td = 15 ns + 22 ns = 37 ns
toff = ts + tf = 120 ns + 12 ns = 132 ns
The turn-on time has dropped dramatically
168 ns:37 ns = 4.54:1
while the turn-off time is only slightly smaller
148 ns:132 ns = 1.12:1

60. (a) Open-circuit in the base circuit

Bad connection of emitter terminal
Damaged transistor

(b) Shorted base-emitter junction

Open at collector terminal

(c) Open-circuit in base circuit

Open transistor

53
61. (a) The base voltage of 9.4 V reveals that the 18 k resistor is not making contact with the
base terminal of the transistor.

If operating properly:

18 k(16 V)
VB  = 2.64 V vs. 9.4 V
18 k  91 k

As an emitter feedback bias circuit:

VCC  VBE 16 V  0.7 V

IB = 
R1  (  1) RE 91 k  (100  1)1.2 k
= 72.1 A
VB = VCC  IB(R1) = 16 V  (72.1 A)(91 k)
= 9.4 V

(b) Since VE > VB the transistor should be “off”

18 k(16 V)
With IB = 0 A, VB = = 2.64 V
18 k  91 k
 Assume base circuit “open”
The 4 V at the emitter is the voltage that would exist if the transistor were shorted
collector to emitter.
1.2 k(16 V)
VE = =4V
1.2 k  3.6 k

62. (a) RB, IB, IC, VC

(b) , IC
(c) Unchanged, I Csat not a function of 
(d) VCC, IB, IC
(e) , IC, VRC  , VRE  , VCE

ETh  VBE E  VBE

63. (a) IB =  Th
RTh  (  1) RE RTh   RE
 E  VBE  ETh  VBE
IC = IB =   Th 
 RTh   RE  RTh  R
 E

RTh
As , , IC, VRC 

VC = VCC  VRC
and VC

(b) R2 = open, IB, IC

VCE = VCC  IC(RC + RE)
and VCE

54
 (c) VCC, VB, VE, IE, IC

(d) IB = 0 A, IC = ICEO and IC(RC + RE) negligible

with VCE  VCC = 20 V

(e) Base-emitter junction = short IB but transistor action lost and IC = 0 mA with
VCE = VCC = 20 V

64. (a) RB open, IB = 0 A, IC = ICEO  0 mA

and VC  VCC = 18 V

(b) , IC, VRC  , VRE  , VCE

(c) RC, IB, IC, VE

(d) Drop to a relatively low voltage  0.06 V

(e) Open in the base circuit

65. (a) S ( I CO )   = 120

(b) S (VBE )   /RB  120 / 510 k = 235 × 10-6 S

(c) S ( )  I C1 /1 = 3.6 mA/120 = 30 × 10-6 A

(d) I C  S ( I CO )I CO  S (VBE )VBE  S ( ) 

 (120)(10  A  0.2  A)  (2.35  104 S )(0.5 V  0.7 V)
 (30  106 A)(150  120)
 2.12 mA

 (1  RB /RE ) 125(1  270 k/2.2 k)

66. (a) S ( I CO )  
  RB /RE 125  270 k/2.2 k
= 62.44

 / RE 125 / 2.2 k
(b) S (VBE )  
  RB / RE 125  270 k / 2.2 k
= 229.3 × 106 S

I C1 (1  RB / RE ) 4.41 mA(1  122.73)

(c) S ( )  
1 (2  RB / RE ) 125(156.25  122.73)
= 15.65 × 10-6 A

55
 (d) I C  S ( I CO )I CO  S (VBE )VBE  S ( )
 (62.44)(10  A  0.2  A)  (  229.36  106 S)(0.5 V  0.7 V)
+ 15.65  106 A(156.25  125)
= 1.03 mA

 (1  RTh / RE ) (1  7.94 k / 0.68 k)

67. (a) S(ICO) =  (80)
  RTh / RE 80  7.94 k / 0.68 k
= 11.06

 / RE 80 / 0.68 k
(b) S(VBE) = 
  RTh / RE 80  7.94 k / 0.68 k
= 1280  106S

I C1 (1  RTh / RE ) 1.71 mA(1 + 7.94 k / 0.68 k)

(c) S() = 
1 (2  RTh / RE ) 80(100  7.94 k / 0.68 k)
= 2.43  106 A

(d) IC = S(ICO)ICO + S(VBE) VBE + S()

= (11.06)(10 A  0.2 A) + (1.28  103S)(0.5 V  0.7 V) + (2.43  106)(100  80)
= 0.313 mA

 (1  RB / RC ) 196.32(1  560 k / 3.9 k)

68. (a) S(ICO) = ( + 1) 
  RB / RC 196.32  560 k / 3.9 k
= 83.69

 / RC 196.32 / 3.9 k
(b) S(VBE) = 
  RB / RC 196.32  560 k / 3.9 k
= 1.48.04  106S

I C1 ( RB  RC ) 2.56 mA(560 k  3.9 k)

(c) S() = 
1 ( RB  2 RC ) 196.32(560 k  245.4(3.9 k))
= 4.83  106A

(d) IC = S(ICO)ICO + S(VBE) VBE + S()

= (83.69)(10 A  0.2 A) + (1.48.04  106S)(0.5  0.7 V)
+ (4.83  106A)(245.4  196.32)
= 1.087 mA

56
69. Type S(ICO) S(VBE) S()
Fixed-bias 120 235  106S 30  106 A
Emitter-bias 62.44 229.36  106S 15.65  106 A
Voltage-divider 11.06 1280  106S 2.43  106A
Collector feedback 83.69 148.04  106S 4.83  106 A

S(ICO): Considerably less for the voltage-divider configuration compared to the other three.
S(VBE): The voltage-divider configuration is the most sensitive .
S(): The voltage-divider configuration is the least sensitive with the fixed-bias
configuration very sensitive.

In general, the voltage-divider configuration is the least sensitive with the fixed-bias the most
sensitive.

70. (a) Fixed-bias:

S(ICO) = 120, IC = 1.176 mA
S(VBE) = 235  106S, IC = 0.047 mA
S() = 30  106A, IC = 0.90 mA
(b) Voltage-divider bias:
S(ICO) = 11.06, IC = 0.108 mA
S(VBE) = 1280  106S, IC = 0.0256 mA
S() = 2.43  106A, IC = 0.0048 × 106 A

(c) For the fixed-bias configuration there is a strong sensitivity to changes in ICO and  and
much less to changes in VBE.

For the voltage-divider configuration the opposite occurs with a high sensitivity to
changes in VBE and less to changes in ICO and .

In total the voltage-divider configuration is considerably more stable than the fixed-bias
configuration.

57