238 DC

SEMICONDUCTOR
BIASING—BJTs The results are a close match with those of Example 4.4 with IC  2.217 mA, VB 
DIODES 2.636 V, VC  15.557 V, and VE  2.26 V.
The relatively few comments required here to permit the analysis of transistor networks
is a clear indication that the breadth of analysis using Multisim can be expanded dramati-
cally without having to learn a whole new set of rules—a very welcome characteristic of
most technology software packages.

PROBLEMS
●
*Note: Asterisks indicate more difficult problems.
4.3 Fixed-Bias Configuration
1. For the fixed-bias configuration of Fig. 4.118, determine:
a. IBQ.
b. ICQ.
c. VCEQ.
d. VC.
e. VB.
f. VE.

ICQ

1.8 kΩ
510 kΩ

β=120

FIG. 4.118
Problems 1, 4, 6, 7, 14, 65, 69,
71, and 75.

2. Given the information appearing in Fig. 4.119, determine:

a. IC.
b. RC.
c. RB.
d. VCE.
3. Given the information appearing in Fig. 4.120, determine:
a. IC.
b. VCC.
c. b.
d. RB.

12 V

IC

RC
RB
VC = 6 V
+
VCE β = 80
I B = 40 μA –

FIG. 4.119 FIG. 4.120

Problem 2. Problem 3.
 4. Find the saturation current (ICsat) for the fixed-bias configuration of Fig. 4.118. LASTPROBLEMS
H1 HEAD 239
*5. Given the BJT transistor characteristics of Fig. 4.121:
a. Draw a load line on the characteristics determined by E = 21 V and RC = 3 k for a
fixed-bias configuration.
b. Choose an operating point midway between cutoff and saturation. Determine the value of
RB to establish the resulting operating point.
c. What are the resulting values of ICQ and VCEQ?
d. What is the value of b at the operating point?
e. What is the value of a defined by the operating point?
f. What is the saturation current (ICsat) for the design?
g. Sketch the resulting fixed-bias configuration.
h. What is the dc power dissipated by the device at the operating point?
i. What is the power supplied by VCC?
j. Determine the power dissipated by the resistive elements by taking the difference between
the results of parts (h) and (i).

IC (mA)

110 μA
100 μA
10 90 μA
80 μA
9
70 μA
8
60 μA
7
50 μA
6
40 μA
5
30 μA
4

3 20 μA

2
10 μA
1
IB = 0 μA

0 5 10 15 20 25 30 VCE (V)

FIG. 4.121
Problems 5, 6, 9, 13, 24, 44, and 57.

6. a. Ignoring the provided value of b(120) draw the load line for the network of Fig. 4.118 on the
characteristics of Fig. 4.121.
b. Find the Q-point and the resulting ICQ and VCEQ.
c. What is the beta value at this Q-point?
7. If the base resistor of Fig. 4.118 is increased to 910 k, find the new Q-point and resulting
values of ICQ and VCEQ.

4.4 Emitter-Bias Configuration

8. For the emitter-stabilized bias circuit of Fig. 4.122, determine:
a. IBQ.
b. ICQ.
c. VCEQ.
d. VC.
e. VB.
f. VE.
240 DC
SEMICONDUCTOR
BIASING—BJTs
DIODES

470 Ω
270 kΩ

β=125

2.2 kΩ

FIG. 4.122
Problems 8, 9, 12, 14, 66, 69, 72, and 76.

9. a. Draw the load line for the network of Fig. 4.122 on the characteristics of Fig. 4.121 using b
from problem 8 to find IBQ.
b. Find the Q-point and resulting values ICQ and VCEQ.
c. Find the value of b at the Q-point.
d. How does the value of part (c) compare with b  125 in problem 8?
e. Why are the results for problem 9 different from those of problem 8?
10. Given the information provided in Fig. 4.123, determine:
a. RC.
b. RE.
c. RB.
d. VCE.
e. VB.
11. Given the information provided in Fig. 4.124, determine:
a. b.
b. VCC.
c. RB.

FIG. 4.123 FIG. 4.124

Problem 10. Problem 11.

12. Determine the saturation current (ICsat) for the network of Fig. 4.122.
*13. Using the characteristics of Fig. 4.121, determine the following for an emitter-bias configura-
tion if a Q-point is defined at ICQ = 4 mA and VCEQ = 10 V.
a. RC if VCC = 24 V and RE = 1.2 k.
b. b at the operating point.
c. RB.
d. Power dissipated by the transistor.
e. Power dissipated by the resistor RC.
*14. a. Determine IC and VCE for the network of Fig. 4.118. LASTPROBLEMS
H1 HEAD 241
b. Change b to 180 and determine the new value of IC and VCE for the network of Fig. 4.118.
c. Determine the magnitude of the percentage change in IC and VCE using the following
equations:
IC(part b) - IC(part a) VCE(part b) - VCE(part a)
%IC = ` ` * 100%, %VCE = ` ` * 100%
IC(part a) VCE(part a)
d. Determine IC and VCE for the network of Fig. 4.122.
e. Change b to 187.5 and determine the new value of IC and VCE for the network of Fig. 4.122.
f. Determine the magnitude of the percentage change in IC and VCE using the following
equations:
IC(part c) - IC(part d) VCE(part c) - VCE(part d)
%IC = ` ` * 100%, %VCE = ` ` * 100%
IC(part d) VCE(part d)
g. In each of the above, the magnitude of b was increased 50%. Compare the percentage
change in IC and VCE for each configuration, and comment on which seems to be less sensi-
tive to changes in b.

4.5 Voltage-Divider Bias Configuration

15. For the voltage-divider bias configuration of Fig. 4.125, determine:
a. IBQ.
b. ICQ.
c. VCEQ.
d. VC.
e. VE.
f. VB.
16. a. Repeat problem 15 for b  140 using the general approach (not the approximate).
b. What levels are affected the most? Why?
17. Given the information provided in Fig. 4.126, determine:
a. IC.
b. VE.
c. VB.
d. R1.

FIG. 4.125 FIG. 4.126

Problems 15, 16, 20, 23, 25, 67, Problems 17 and 19.
69, 70, 73, and 77.

18. Given the information appearing in Fig. 4.127, determine:

a. IC.
b. VE.
c. VCC.
d. VCE.
e. VB.
f. R1.
242 DC
SEMICONDUCTOR
BIASING—BJTs
DIODES

VE

FIG. 4.127
Problem 18.

19. Determine the saturation current (ICsat) for the network of Fig. 4.125.
20. a. Repeat problem 16 with b  140 using the approximate approach and compare results.
b. Is the approximate approach valid?
*21. Determine the following for the voltage-divider configuration of Fig. 4.128 using the approxi-
mate approach if the condition established by Eq. (4.33) is satisfied.
a. IC.
b. VCE.
c. IB.
d. VE.
e. VB.

FIG. 4.128
Problems 21, 22, and 26.

*22. Repeat Problem 21 using the exact (Thévenin) approach and compare solutions. Based on the
results, is the approximate approach a valid analysis technique if Eq. (4.33) is satisfied?
23. a. Determine ICQ, VCEQ, and IBQ for the network of Problem 15 (Fig. 4.125) using the approxi-
mate approach even though the condition established by Eq. (4.33) is not satisfied.
b. Determine ICQ, VCEQ, and IBQ using the exact approach.
c. Compare solutions and comment on whether the difference is sufficiently large to require
standing by Eq. (4.33) when determining which approach to employ.
*24. a. Using the characteristics of Fig. 4.121, determine RC and RE for a voltage-divider network
having a Q-point of ICQ = 5 mA and VCEQ = 8 V. Use VCC = 24 V and RC = 3RE.
b. Find VE.
c. Determine VB.
d. Find R2 if R1 = 24 k assuming that bRE 7 10R2.
e. Calculate b at the Q-point.
f. Test Eq. (4.33), and note whether the assumption of part (d) is correct.
*25. a. Determine IC and VCE for the network of Fig. 4.125. LASTPROBLEMS
H1 HEAD 243
b. Change b to 120 (50% increase), and determine the new values of IC and VCE for the net-
work of Fig. 4.125.
c. Determine the magnitude of the percentage change in IC and VCE using the following
equations:
IC(part b) - IC(part a) VCE(part b) - VCE(part a)
%IC = ` ` * 100%, %VCE = ` ` * 100%
IC(part a) VCE(part a)
d. Compare the solution to part (c) with the solutions obtained for parts (c) and (f) of Problem 14.
e. Based on the results of part (d), which configuration is least sensitive to variations in b?
*26. a. Repeat parts (a) through (e) of Problem 25 for the network of Fig. 4.128. Change b to 180
in part (b).
b. What general conclusions can be made about networks in which the condition bRE 7 10R2
is satisfied and the quantities IC and VCE are to be determined in response to a change in b?

4.6 Collector-Feedback Configuration

27. For the collector-feedback configuration of Fig. 4.129, determine:
a. IB.
b. IC.
c. VC.

270 kΩ

1.2 kΩ

FIG. 4.129
Problems 27, 28, 74, and 78.

28. For the network of problem 27

V VCC - VBE
a. Determine ICQ using the equation ICQ ⬵ =
R RC + RE
b. Compare with the results of problem 27 for ICQ.
c. Compare R to RF>b.
d. Is the statement valid that the larger R is compared with RF>b, the more accurate the
V
equation ICQ ⬵ ? Prove using a short derivation for the exact current ICQ.
R
e. Repeat parts (a) and (b) for b  240 and comment on the new level of ICQ.
29. For the voltage feedback network of Fig. 4.130, determine:
a. IC.
b. VC.
c. VE.
d. VCE.
30. a. Compare levels of R = RC + RE to RF>b for the network of Fig. 4.131.
b. Is the approximation ICQ ⬵ V>R valid?
*31. a. Determine the levels of IC and VCE for the network of Fig. 4.131.
b. Change b to 135 (50% increase), and calculate the new levels of IC and VCE.
c. Determine the magnitude of the percentage change in IC and VCE using the following equations:
IC(part b) - IC(part a) VCE(part b) - VCE(part a)
%IC = ` ` * 100%, %VCE = ` ` * 100%
IC(part a) VCE(part a)
d. Compare the results of part (c) with those of Problems 14(c), 14(f ), and 25(c). How does
the collector-feedback network stack up against the other configurations in sensitivity to
changes in b?
244 DC
SEMICONDUCTOR
BIASING—BJTs
DIODES

8.2 kΩ

330 kΩ

β=180

1.8 kΩ

FIG. 4.130 FIG. 4.131

Problems 29 and 30. Problems 30 and 31.

32. Determine the range of possible values for VC for the network of Fig. 4.132 using the 1-MÆ
potentiometer.
*33. Given VB = 4 V for the network of Fig. 4.133, determine:
a. VE.
b. IC.
c. VC.
d. VCE.
e. IB.
f. b.

FIG. 4.132 FIG. 4.133

Problem 32. Problem 33.

4.7 Emitter-Follower Configuration

*34. Determine the level of VE and IE for the network of Fig. 4.134.

FIG. 4.134
Problem 34.
 35. For the emitter follower network of Fig. 4.135 LASTPROBLEMS
H1 HEAD 245
a. Find IB, IC, and IE.
b. Determine VB, VC, and VE.
c. Calculate VBC and VCE.

12 V

22 k⍀
C
Vi β = 110
B
Vo
E
82 k⍀
1.2 k⍀

FIG. 4.135
Problem 35.

4.8 Common-Base Configuration

*36. For the network of Fig. 4.136, determine:
a. IB.
b. IC.
c. VCE.
d. VC.
*37. For the network of Fig. 4.137, determine:
a. IE.
b. VC.
c. VCE.
38. For the common-base network of Fig. 4.138
a. Using the information provided determine the value of RC.
b. Find the currents IB and IE.
c. Determine the voltages VBC and VCE.

14 V

RC
VC = 8 V
– 8V
Vo
β = 80 2.2 kΩ
– VCE + VC β = 90
4V
Vi
IE

1.8 kΩ RE 1.1 k⍀

10 V

FIG. 4.136 FIG. 4.137 FIG. 4.138

Problem 36. Problem 37. Problem 38.

4.9 Miscellaneous Bias Configurations

*39. For the network of Fig. 4.139, determine:
a. IB.
b. IC.
c. VE.
d. VCE.
246 DC
SEMICONDUCTOR
BIASING—BJTs
DIODES

IB

FIG. 4.139 FIG. 4.140

Problem 39. Problems 40 and 68.

40. Given VC = 8 V for the network of Fig. 4.140, determine:

a. IB.
b. IC.
c. b.
d. VCE.

4.11 Design Operations

41. Determine RC and RB for a fixed-bias configuration if VCC = 12 V, b = 80, and ICQ = 2.5 mA
with VCEQ = 6 V. Use standard values.
42. Design an emitter-stabilized network at ICQ = 12ICsat and VCEQ = 12VCC. Use VCC = 20 V,
ICsat = 10 mA, b = 120, and RC = 4RE. Use standard values.
43. Design a voltage-divider bias network using a supply of 24 V, a transistor with a beta of 110,
and an operating point of ICQ = 4 mA and VCEQ = 8 V. Choose VE = 18VCC. Use standard
values.
*44. Using the characteristics of Fig. 4.121, design a voltage-divider configuration to have a satura-
tion level of 10 mA and a Q-point one-half the distance between cutoff and saturation. The
available supply is 28 V, and VE is to be one-fifth of VCC. The condition established by Eq.
(4.33) should also be met to provide a high stability factor. Use standard values.

4.12 Multiple BJT Networks

45. For the R–C-coupled amplifier of Fig. 4.141 determine
a. the voltages VB, VC, and VE for each transistor.
b. the currents IB, IC, and IE for each transistor

+20 V

2.2 kΩ 22 kΩ 2.2 kΩ
18 kΩ
Vo
10 μF 10 μF
Vi
Q1 β = 160 Q2 β = 90
10 μF

4.7 kΩ + 3.3 kΩ +
1 kΩ 20 μF 1.2 kΩ 20 μF

FIG. 4.141
Problem 45.
46. For the Darlington amplifier of Fig. 4.142 determine
a. the level of bD.
b. the base current of each transistor.
c. the collector current of each transistor.
d. the voltages VC1, VC2, VE1, and VE2.
 18 V LASTPROBLEMS
H1 HEAD 247

2.2 MΩ

Vi β1 = 50, β2 = 75
VBE1 = VBE2 = 0.7 V

Vo

470 Ω

FIG. 4.142
Problem 46.

47. For the cascode amplifier of Fig. 4.143 determine

a. the base and collector currents of each transistor.
b. the voltages VB1, VB2, VE1, VC1, VE2, and VC2.

VCC = 22 V

RC
RB 2.2 kΩ
1
8.2 kΩ Vo
C1 C = 5 μF
Q 2 β2 = 120
10 μF
RB
2
4.7 kΩ

Vi Q 1 β1 = 60
Cs = 5 μF

RB
3
3.3 kΩ RE
CE = 20 μF
1.1 kΩ

FIG. 4.143
Problem 47.

48. For the feedback amplifier of Fig. 4.144 determine

a. the base and collector current of each transistor.
b. the base, emitter, and collector voltages of each transistor.

4.13 Current Mirror Circuits

49. Calculate the mirrored current I in the circuit of Fig. 4.145.
248 DC
SEMICONDUCTOR
BIASING—BJTs 12 V
DIODES

220 Ω

Vo
Vi
β1 = 80
β2 = 160

1.8 MΩ

FIG. 4.144 FIG. 4.145

Problem 48. Problem 49.

*50. Calculate collector currents for Q1 and Q2 in Fig. 4.146.

FIG. 4.146
Problem 50.

4.14 Current Source Circuits

51. Calculate the current through the 2.2-k⍀ load in the circuit of Fig. 4.147.
52. For the circuit of Fig. 4.148, calculate the current I.

28 V
I

2.2 kΩ

⫹6 V RB
β = 120
100 kΩ

1.2 kΩ

FIG. 4.147 FIG. 4.148

Problem 51. Problem 52.
*53. Calculate the current I in the circuit of Fig. 4.149. LASTPROBLEMS
H1 HEAD 249

FIG. 4.149
Problem 53.

4.15 pnp Transistors

54. Determine VC, VCE, and IC for the network of Fig. 4.150.
55. Determine VC and IB for the network of Fig. 4.151.

FIG. 4.150 FIG. 4.151

Problem 54. Problem 55.

56. Determine IE and VC for the network of Fig. 4.152.

FIG. 4.152
Problem 56.

4.16 Transistor Switching Networks

*57. Using the characteristics of Fig. 4.121, determine the appearance of the output waveform for
the network of Fig. 4.153. Include the effects of VCEsat, and determine IB, IBmax, and ICsat when
Vi = 10 V. Determine the collector-to-emitter resistance at saturation and cutoff.
250 DC
SEMICONDUCTOR
BIASING—BJTs 10 V
DIODES
Vi 2.4 kΩ

Vo
10 V
180 kΩ
Vi

0V
t

FIG. 4.153
Problem 57.

*58. Design the transistor inverter of Fig. 4.154 to operate with a saturation current of 8 mA using a
transistor with a beta of 100. Use a level of IB equal to 120% of IBmax and standard resistor values.

5V

Vi RC

5V Vo
RB
Vi  = 100

0V
t

FIG. 4.154
Problem 58.

59. a. Using the characteristics of Fig. 3.23e, determine ton and toff at a current of 2 mA. Note the
use of log scales and the possible need to refer to Section 9.2.
b. Repeat part (a) at a current of 10 mA. How have ton and toff changed with increase in col-
lector current?
c. For parts (a) and (b), sketch the pulse waveform of Fig. 4.91 and compare results.

4.17 Troubleshooting Techniques

*60. The measurements of Fig. 4.155 all reveal that the network is not functioning correctly. List as
many reasons as you can for the measurements obtained.

(a) (b) (c)

FIG. 4.155
Problem 60.

*61. The measurements appearing in Fig. 4.156 reveal that the networks are not operating properly.
Be specific in describing why the levels obtained reflect a problem with the expected network
behavior. In other words, the levels obtained reflect a very specific problem in each case.
 16 V 16 V LASTPROBLEMS
H1 HEAD 251

3.6 kΩ 3.6 kΩ
91 kΩ 91 kΩ

VB = 9.4 V
 = 100 2.64 V  = 100

4V
18 kΩ 18 kΩ
1.2 kΩ 1.2 kΩ

(a) (b)

FIG. 4.156
Problem 61.

62. For the circuit of Fig. 4.157:

a. Does VC increase or decrease if RB is increased?
b. Does IC increase or decrease if b is reduced?
c. What happens to the saturation current if b is increased?
d. Does the collector current increase or decrease if VCC is reduced?
e. What happens to VCE if the transistor is replaced by one with smaller b?
63. Answer the following questions about the circuit of Fig. 4.158:
a. What happens to the voltage VC if the transistor is replaced by one having a larger value of b?
b. What happens to the voltage VCE if the ground leg of resistor RB2 opens (does not connect
to ground)?
c. What happens to IC if the supply voltage is low?
d. What voltage VCE would occur if the transistor base–emitter junction fails by becoming
open?
e. What voltage VCE would result if the transistor base–emitter junction fails by becoming a
short?
*64. Answer the following questions about the circuit of Fig. 4.159:
a. What happens to the voltage VC if the resistor RB is open?
b. What should happen to VCE if b increases due to temperature?
c. How will VE be affected when replacing the collector resistor with one whose resistance is
at the lower end of the tolerance range?
d. If the transistor collector connection becomes open, what will happen to VE?
e. What might cause VCE to become nearly 18 V?

VC
VC
VB
VB

VE VE

FIG. 4.157 FIG. 4.158 FIG. 4.159

Problem 62. Problem 63. Problem 64.