COMMON INSTRUCTIONS

1. Safety is of paramount importance in the electrical engineering laboratories.

2. Be punctual to the lab class.
3. Attend the laboratory classes wearing the prescribed uniform and shoes.
4. Avoid wearing any metallic rings, straps or bangles as they are likely to prove dangerous at times.
5. Girls should put their plait inside their overcoat
6. Boys students should tuck in their uniform to avoid the loose cloth getting into contact with rotating
machines.
7. Acquire a good knowledge of the surrounding of your worktable. Know where the various live
points are situated in your table.
8. In case of any unwanted things happening, immediately switch off the mains in the worktable.
9. This must be done when there is a power break during the experiment being carried out.
10. Before entering into the lab class, you must be well prepared for the experiment that you are going
to do on that day.
11. You must bring the related text book which may deal with the relevant experiment.
12. Get the circuit diagram approved.
13. Prepare the list of equipments and components required for the experiment and get the indent
approved.
14. Plan well the disposition of the various equipments on the worktable so that the experiment can be
carried out.
15. Make connections as per the approved circuit diagram and get the same verified. After getting the
approval only supply must be switched on.
16. For the purpose of speed measurement in rotating machines, keep the tachometer in the extended
shaft. Avoid using the brake drum side.
17. Get the reading verified. Then inform the technician so that supply to the worktable can be switched
off.
18. You must get the observation note corrected within two days from the date of completion of
experiment. Write the answer for all the discussion questions in the observation note. If not, marks
for concerned observation will be proportionately reduced.
19. Submit the record note book for the experiment completed in the next class.
20. If you miss any practical class due to unavoidable reasons, intimate the staff in charge and do the
missed experiment in the repetition class.
21. Such of those students who fail to put in a minimum of 75% attendance in the laboratory class will
run the risk of not being allowed for the University Practical Examination. They will have to repeat
the lab course in subsequent semester after paying prescribed fee.
22. Use isolated supply for the measuring instruments like CRO in Power Electronics Laboratory
experiments.

Exp No: 1(a) CHARACTERISTICS OF SCR

1
1. OBJECTIVES

To obtain the following for a given SCR

a) Forward characteristics,
b) Reverse characteristics,
c) Holding current and
d) Latching current

2. APPARATUS REQUIRED

S.No. Components name Range Qty

1 SCR TYN 612 1
Dual Regulated Power
2 (0-30)/2A 1
Supply
3 Resistors 1 KΩ 2
4 Resistors 10KΩ Potentiometer 1
5 Voltmeter (0-30) V 2
6 Ammeter (0-100µ.A),(0-10mA), (0-100mA),MC Each 1
7 Bread Board - 1
8 Connecting wires - As req.

PRE LAB WORK

THEORY
In power electronics the thyristor is the most common and popular family of switching devices.
According to constructions, the numbers of semiconductor layer of thyristor family member are nearly
similar but their position arrangements are different and also the terminals are connected in different
positions. For this they have shown different characteristics. Some of the family members are bidirectional
that is they conduct current in both terminals and have no polarity limitations and use to switch in the
heavy ac load, otherwise unidirectional member conduct current in only one direction and use mostly in
rectification of ac and also switch. Usually four layers and also five layers semiconductor devices are called
the thyristor. According to their construction they have at least two terminals to maximum four terminals.
Specifically the five layer members (TRIAC, DIAC) of thyristor family are used their four semiconductor
layer in the state of conduction.

2
 A

P A
J1
N
J2
P TYN612 G K
G J3
N

K K A G

Schematic Representations of SCR

CIRCUIT DIAGRAM

Circuit Diagram of SCR

3
MODEL GRAPH

V-I Characteristics of SCR

PHOTO OF THE EXPERIMENTAL SETUP

4
SAFETY INSTRUCTIONS
1. All the connection should be tight.
2. Ammeter is always connected in series to the circuit while voltmeter is parallel to the
Conductor.
3. The electrical current should not flow the circuit for long time, Otherwise its temperature will
increase and the result will be affected.
4. It should be care that the values of the components of the circuit is does not exceed to their
ratings (maximum value).
5. Before the circuit connection it should be check out working condition of all the Component

TROUBLE SHOOTING
1. Be sure that the power is turned on.
2. Be sure the ground connections are common.
3. Be sure the circuit you built is identical to that in the diagram. (Do a node by node check)
4. Be sure that the supply voltages are correct.

EXPERIMENTAL PROCEDURE
Forward Characteristics

1. Connections are made as per the circuit diagram.

2. Initially the gate is at the open condition means that there is no voltage applied to the gate.
3. Apply a positive voltage by adjusting the potentiometer, across the anode and cathode so that the
device is forward biased.
4. The anode to cathode voltage is increased, until the thyristor starts conduction.
5. Note down the corresponding voltmeter and ammeter readings, by varying the potentiometer.

Reverse Characteristics
1. Apply a reverse voltage across the anode to cathode, as the same way as like the forward
characteristics.
2. Keep on increasing the reverse voltage across that a small leakage current flow, until the reverse
break down occurs.
3. Note down the corresponding voltmeter and ammeter readings.

TABULATION

5
Tabulation: 1 Forward Characteristics of SCR
S.NO Gate current IG = (mA) Gate current IG = (mA)
VG (V) VAK (V) IA (mA) VG (V) VAK (V) IA (mA)

Gate voltage VG (V), Anode current IA (mA), Anode- Cathode Voltage VAK (V)

Tabulation: 2 Gate Characteristics of SCR

S.No. Anode voltage Va(V) Anode current Ia(mA)

PROCEDURE FOR DETERMINING LATCHING CURRENT AND HOLDING CURRENT

To Find Latching Current:
1. Adjust gate voltage more than 10 V in circuit diagram.
2. Gate current/ Voltage should be kept constant
3. Initially keep the voltage source VAK in zero value.
4. Close the Anode circuit switch and increase anode current by varying the VAK from zero.
5. Anode current is increased in steps of 1 mA and between every step the gate is opened to check
whether the SCR continues to conduct

6
6. Initially the SCR turns off for certain anode current values but note that Value when SCR does not
Turn off even after the removal of gate triggering
7. Note down the value of Anode current which will be Latching current

To Find Holding Current:

1. Keep the Anode current greater than latching current value.
2. Remove the gate signal of the SCR (check whether SCR is still ON)
3. Start reducing the Anode current by adjusting the voltage source, VAK
4. Observe the Ammeter and note down the current read in it before the SCR turns off.
5. The above observation gives Holding current of the given SCR.

POST LAB WORK

RESULT ANALYSIS:
During Forward Conduction mode Anode is positive with respect to cathode. When supply voltage
is increased from zero, suddenly the SCR starts conducting. That particular voltage is called as break over
voltage .Voltage drops at this point suddenly as shown by the dotted line. If proper gate current is made to
flow, then SCR can close at smaller supply voltage. During Reverse bias condition Anode is negative with
respect to cathode. Initially the anode current retains small (viz. leakage current).Beyond a particular
reverse voltage, the SCR starts massive conduction (avalanche) .That voltage is Reverse breakdown
voltage.

7
Exp no: 1(b) CHARACTERISTICS OF TRIAC

1. OBJECTIVES

To obtain the VI characteristics, both forward and reverse conduction of the given TRIAC.
2. APPARATUS REQUIRED

S.No. Components name Range Quantity

1 TRIAC BTA 12 1
Dual Regulated Power
2 (0-30)/2A 1
Supply
3 Resistors 1 KΩ 2
4 Potentiometer 10KΩ 1
5 Voltmeter (0-30) V 1
Ammeter (0-100µ.A),(0-10mA), (0-
6 Each 1
100mA),m.c
7 Bread Board - 1
8 Connecting wires - As req.

PRE LAB WORK

THEORY
TRIAC is one of the bidirectional devices of thyristor family. TRIAC have five layer
and three terminals, the name TRIAC comes from its three electrodes (terminals) shown in figure. It has no
cathode terminal, one of the three is gate and the others are
1 (MT1 i.e. main terminal) and A
2 (MT2) as it conducts by terminal. TRIAC can be triggered with either positive or negative gate pulses
when the anode terminal potentials are positive or negative respectively. The five layers TRIAC can be
divided into two haves one is SCR1 and other is SCR2 connected in parallel of opposite polarity.
SAFETY INSTRUCTIONS
1. All the connection should be tight.
2. Ammeter is always connected in series in the circuit while voltmeter is parallel to the conductor.
3. The electrical current should not flow the circuit for long time, otherwise its temperature will increase
and the result will be affected.
4. It should be care that the values of the components of the circuit is does not exceed to their ratings
(maximum value).
5. Before the circuit connection it should be check out working condition of all the Component

8
TROUBLE SHOOTING
1. Be sure that the power is turned on.
2. Be sure the ground connections are common.
3. Be sure the circuit you built is identical to that in the diagram. (Do a node by node check)
4. Be sure that the supply voltages are correct.

BT136

Schematic Representations of TRIAC

9
 Circuit Diagram of TRIAC

MODEL GRAPH

V-I Characteristics of TRIAC

PHOTO OF THE EXPERIMENTAL SETUP

10
TABULATION
TABULATION: 1 Measuring Forward Bias and Reverse bias current

Forward Bias Reverse Bias

S.NO Gate Current IG = (mA) Gate Current IG = (mA)

VMT1MT2 (V) IMT2 (M.A) VMT1MT2 (V) IMT1 (M.A)

EXPERIMENTAL PROCEDURE
VI characteristics (Forward &Reverse Conduction)

1. Connections are given as per the circuit diagram. **

2. Switch ON the regulated power supply unit.
11
 3. Keep the Gate current (IG) at certain value i.e. IG=5.5 mA.
4. Slowly increase the voltage across MT1 and MT2.Note down the break down
Voltage (VBo).
5. Further increase of the voltage note down the current (I).
6. Tabulate the readings for various gate currents and plot the graph.
** Forward Conduction – Connect the MT2 terminal of TRIAC to the positive terminal
of the supply and MT1 to the negative terminal of the supply.
** Reverse Conduction – Connect the MT1 terminal of TRIAC to the positive terminal
of the supply and MT2 to the negative terminal of the supply.

POST LAB WORK

RESULT ANALYSIS
The TRIAC has on and off state characteristics similar to SCR but now the characteristic is applicable to
both positive and negative voltages. This is expected because TRIAC consists of two SCRs connected in
parallel but opposite in directions.MT2 is positive with respect to MTX in the first quadrant and it is
negative in the third quad rant. As already said in previous blog posts, the gate triggering may occur in any
of the following four modes.

Quadrant I operation : VMT2, positive; VG1 positive

Quadrant II operation : VMT21 positive; VGl negative

Quadrant III operation : VMT21 negative; VGl negative Quadrant IV operation : VMT21

negative; VG1 positive where VMT21 and VGl are the voltages of terminal MT2 and gate with

respect to terminal MT1.

The device, when starts conduction permits a very heavy amount of current to flow through it. This large
inrush of current must be restricted by employing external resistance, otherwise the device may get
damaged.

Exp No: 2 CHARACTERISTICS OF MOSFET AND IGBT

1. OBJECTIVES

To obtain the steady state output and transfer characteristics of MOSFET and IGBT.

2. APPARATUS REQUIRED

12
 S.No Component name Range Qty
1. MOSFET, IGBT 1
2. Resistors Required Values 2
3. Ammeter (0-10) mA, M.C 2
4. Voltmeter (0-50) V, M.C 2
5. Patch chords As Required

PRE LAB WORK

THEORY
The insulated gate bipolar transistor or IGBT is a three-terminal power semiconductor device,
noted for high efficiency and fast switching. The structure is very similar to that of a vertically diffused
MOSFET featuring a double diffusion of a p-type region and an n-type region. An inversion layer can be
formed under the gate by applying the correct voltage to the gate contact as with a MOSFET. The main
difference is the use of a p+substrate layer for the drain. The effect is to change this into a bipolar device as
this p-type region injects holes into the n-type drift region. Blocking Operation: The on/off state of the
device is controlled, as in a MOSFET, by the gate voltage VG . If the voltage applied to the gate contact,
with respect to the emitter, is less than the threshold voltage V th then no MOSFET inversion layer is created
and the device is turned off. When this is the case, any applied forward voltage will fall across the reversed
biased junction J2. The only current to flow will be a small leakage current.

SAFETY INSTRUCTIONS
1. All the connection should be tight.
2. Ammeter is always connected in series in the circuit while voltmeter is parallel to the conductor.
3. The electrical current should not flow the circuit for long time, otherwise its temperature will increase
and the result will be affected.
4. It should be care that the values of the components of the circuit is does not exceed to their ratings
(maximum value).
5. Before the circuit connection it should be check out working condition of all the Component

TROUBLE SHOOTING
1. Be sure that the power is turned on.
2. Be sure the ground connections are common.
3. Be sure the circuit you built is identical to that in the diagram. (Do a node by node check)
4. Be sure that the supply voltages are correct.

13
CIRCUIT DIAGRAM

Circuit diagram for MOSFET

Circuit diagram for IGBT

MODEL GRAPH

14
 ID (A) VGS =0
IDSS

VGS=1
DRAIN CURRENT

VGS=2

VGS=3

0
VDS (V)
Output Characteristics of MOSFET

ID(A)
VDS2 VDS1
DRAIN CURRENT

VGS volts

Transfer Characteristics of MOSFET

15
 VGE4<VGE3<VGE2<VGE1
IC VGE4
(A)
VGE3
VGE2
VGE1

0 VCE (V)

Output Characteristics of IGBT

Transfer Characteristics of IGBT

EXPERIMENTAL PROCEDURE
MOSFET
Steady state Output Characteristics
1. Connections are made as per the circuit diagram.
2. Switch ON the 230v power supply to the module.
3. Keep Gate-Source voltage (VGS) at particular voltage by varying the potentiometer (POT). i.e. V GS =
4V.
4. Smoothly vary the Drain- Source voltage (V DS) till the MOSFET gets turned ON and note down the
voltmeter (VDS) and ammeter (ID) readings.
16
 5. Further increase VDS and note down ID.
6. Repeat the same procedure for different values of VGS.
7. From the reading calculate Gm and Rds.
8. Draw the graph between VDS and ID keeping the VGS constant. Transfer Characteristics:
1. Switch ON the 230v power supply to the module.
2. Keep Drain- Source voltage (VDS) at particular voltage by varying the potentiometer (POT).
i.e. VDS = 6V.
3. Smoothly vary the Gate-Source voltage (V GS) till the MOSFET gets turned ON and note down
the voltmeter (VGS) and ammeter (I D) readings.
4. Further increase VGS and note down ID.
5. Repeat the same procedure for different values of VDS.
6. Draw the graph between VGS and ID keeping the VDS constant.

PHOTO OF THE EXPERIMENTAL SETUP

TABULATION
Tabulation 1: MOSFET OUTPUT CHARACTERISTICS

17
 VGS = Volts VGS = Volts
VDS = Volts ID = mA VDS = Volts ID = mA

IGBT
Output Characteristics
1. Connections are made as per the circuit diagram.
2. Switch ON the 230v power supply to the module.
3. Keep Gate-Emitter voltage (VGE ) at particular voltage by varying the Potentiometer
(POT). i.e. VGE = 5V.
4. Smoothly vary the Collector – Emitter voltage (VCE) till the IGBT gets turned ON and
note down the voltmeter (VCE) and ammeter (I C) readings.
5. Further increase VCE and note down IC.
6. Repeat the same procedure for different values of VGE and note IC.
7. From the reading calculate Gm and Rds.
8. Draw the graph between VCE and IC keeping the VGE constant. Transfer Characteristics
1. Switch ON the 230v power supply to the module.
2. Keep Collector – Emitter voltage (VCE) at particular voltage by varying the potentiometer
(POT). i.e. VCE = 5V .
3. Smoothly vary Gate-Emitter voltage (VGE ) the till the IGBT gets turned ON and note down
the voltmeter (VGE) and ammeter (I C) readings.
4. Further increase VGE and note down IC.
5. Repeat the same procedure for different values of VCE and note down IC.
6. Draw the graph between VGE and IC keeping the VCE constant.

Tabulation 2: TRANSFER CHARACTERISTICS

. VDS = Volts VDS = Volts
VGS = Volts ID= mA VGS = Volts ID= mA

18
Tabulation 3: IGBT OUTPUT CHARACTERISTICS

VGE = Volts VGE = Volts

VCE = Volts IC = mA VCE = Volts ID = mA

Tabulation 4: TRANSFER CHARACTERISTICS

VCE = Volts VCE = Volts

VGE = Volts IC = mA VGE= Volts IC = mA

19
POST LAB WORK
RESULT ANALYSIS:
IGBT is a voltage-controlled device, it only requires a small voltage on the Gate to maintain
conduction through the device unlike BJT’s which require that the Base current is continuously supplied in
a sufficient enough quantity to maintain saturation. Also the IGBT is a unidirectional device, meaning it
can only switch current in the “forward direction”, that is from Collector to Emitter unlike MOSFET’s
which have bi-directional current switching capabilities (controlled in the forward direction and
uncontrolled in the reverse direction). The principal of operation and Gate drive circuits for the insulated
gate bipolar transistor are very similar to that of the N-channel power MOSFET. The basic difference is
that the resistance offered by the main conducting channel when current flows through the device in its
“ON” state is very much smaller in the IGBT. Because of this, the current ratings are much higher when
compared with an equivalent power
MOSFET.

Exp No: 3 Date:

SWITCHING CHARACTERISTICS OF SCR AND IGBT

1. OBJECTIVE

To study the switching characteristics of SCR and IGBT.

2. APPARATUS REQUIRED

S.No Components name Range Qty

1. VPET – 216A Trainer - 1
2. CRO - 1
3. Patch Chords ` As Required

SAFETY INSTRUCTIONS

1. All the connection should be tight.

20
2. Ammeter is always connected in series to the circuit while voltmeter is parallel to the conductor.

3. The electrical current should not flow the circuit for long time, otherwise its temperature will increase
and the result will be affected.
4. It should be care that the values of the components of the circuit is does not exceed to their ratings
(maximum value).
5. Before the circuit connection it should be check out working condition of all the

Component

TROUBLE SHOOTING

1. Be sure that the power is turned on.

2. Be sure the ground connections are common.

3. Be sure the circuit you built is identical to that in the diagram (Do a node by node check).
4. Be sure that the supply voltages are correct.

CIRCUIT DIAGRAM

21
 Circuit for switching characteristics of SCR

Circuit for Switching Characteristics of IGBT

MODEL GRAPH

Switching Characteristics of SCR

22
 Switching Characteristics of IGBT

3.4 PHOTO OF THE EXPERIMENTAL SETUP

23
EXPERIMENTAL PROCEDURE

Switching characteristics of SCR

1. Connections are made as per the circuit diagram.

2. Switch On the trainer kit.

3. Vary the gate voltage adjustment knob until the device is ‘ON’ which can be observed

by the output voltage waveform VAK at P7 & P8 terminals.

4. Observe the current waveform at P5 & P7 terminals.

5. Compare the output voltage waveform with input voltage waveform and measure the

TON and TOFF of the device.

Switching Characteristics of IGBT

1. Connections are made as per the circuit diagram.

2. Switch On the power.

3. Set the voltage V1 to 5V by adjusting the voltage adjustment knob.

4. Observe the output voltage waveform VCE at P6 and P9 terminals by using CRO.

5. Measure TON & TOFF of the device by comparing the output waveforms (VCE) with the input
waveform (VG).

POST LAB WORK

24
RESULT ANALYSIS:

Exp No: 4 SINGLE PHASE SCR BASED HALF AND FULLY

CONTROLLED BRIDGE CONVERTER

1. OBJECTIVE
To study the operation of Single-phase
i) half controlled converter with R and RL loads.
ii) fully controlled converter with R and RL loads
2. APPARATUS REQUIRED

S.No Component Name Range Qty

1. SCR module 1
2. Diode 1N4001 2
3. Voltmeter (0-50) V, M.I 1
5. CRO 1
6. Patch chords As Required
PRE LAB WORK
FORMULAE
Half Controlled Bridge Converter

25
Fully Controlled Bridge Converter

CIRCUIT DIAGRAM

Half Controlled Bridge Converter with R Load

26
 Fully Controlled Bridge Converter with R load

Fully Controlled Bridge Converter with R-L Load

MODEL GRAPH

27
 Half Controlled Bridge Converter

Fully Controlled Bridge Converter

SAFETY INSTRUCTIONS
1. All the connection should be tight.

28
 2. It should be care that the values of the components of the circuit is does not exceed to
their ratings (maximum value).
3. Before the circuit connection it should be check out working condition of all the
Component

TROUBLE SHOOTING
1. Be sure that the power is turned on.
2. Be sure the ground connections are common.
3. Be sure the circuit you built is identical to that in the diagram. (Do a node by node check) 4. Be
sure that the supply voltages are correct.

EXPERIMENTAL PROCEDURE (Half Controlled Bridge Converter) For

R load:
1. Connections are given as per the circuit diagram.
2. Ensure that the potentiometer (POT) of the control circuit is in minimum position.
3. Switch ON the module power switch and the CRO.
4. Switch ON the debounce logic switch in the control circuit.
5. Vary the control voltage using the potentiometer (POT) of the control circuit from minimum to
maximum in step by step.
6. For each step note down output voltage, firing angle ().Calculate output voltage using the
formula.
For RL load:
1. Connections are given as per the circuit diagram.
2. Ensure that the potentiometer (POT) of the control circuit is in minimum position.
3. Switch ON the module power switch and the CRO.
4. Switch ON the debounce logic switch in the control circuit.
5. Vary the control voltage using the potentiometer (POT) of the control circuit from minimum to
maximum in step by step.
6. For each step note down output voltage, firing angle (). Calculate output voltage using the
formula.

29
Fully Controlled Bridge Rectifier for RL load EXPERIMENTAL
PROCEDURE (Fully Controlled Bridge Converter) For R load:
30
 1. Connections are given as per the circuit diagram.
2. Ensure that the potentiometer (POT) of the control circuit is in minimum position.
3. Switch ON the module power switch and the CRO.
4. Switch ON the debounce logic switch in the control circuit.
5. Vary the control voltage using the potentiometer (POT) of the control circuit from minimum to
maximum in step by step.
6. For each step note down output voltage, firing angle (). Calculate output voltage using the
formula.
For RL load
1. Connections are given as per the circuit diagram.
2. Ensure that the potentiometer of the control circuit is in minimum position.
3. Switch ON the module power switch and the CRO.
4. Switch ON the debounce logic switch in the control circuit.
5. Vary the control voltage using the potentiometer (POT) of the control circuit from minimum to
maximum in step by step.
6. For each step note down output voltage, firing angle () and extinction angle (). Calculate
output voltage using the formula.

PHOTO OF THE EXPERIMENTAL SETUP

Half Controlled Bridge Converter with R Load

TABULATION

31
Tabulation 1: Half Controlled Bridge Rectifier
Vs = R=
S.No Firing angle α Vdc Measured Vdc Calculated VRMS Calculated
(degree) (Volts) (Volts) (Volts)

Tabulation 2: Fully Controlled Bridge Converter

S.No Firing angle α Vdc Measured Vdc Calculated VRMS Calculated

(degree) (Volts) (Volts) (Volts)

Half Controlled Bridge Converter with R-L Load

32
Fully Controlled Bridge Converter with R Load

Fully Controlled Bridge Converter with R Load

33
POST LAB WORK

RESULT ANALYSIS:
The voltage and current waveforms of the fully controlled bridge rectifier for a resistive load.
Thyristors T1 and T2 must be fired simultaneously during the positive half-wave of the source voltage Vs to
allow conduction of current. Alternatively, thyristors T3 and T4 must be fired simultaneously during the
negative half wave of the source voltage. To ensure simultaneous firing, thyristors T1 and T2 use the same
firing signal.

34
Ex. No: 5 DESIGN A BUCK AND BOOST CONVERTER CIRCUIT USING POWER
MOSFET

Date :
AIM:

To Study the operation and gain characteristics of buck and boost type MOSFET based choppers.

APPARATUS REQUIRED:

Sl.No. Name Range Quantity

1 MOSFET based Chopper Trainer 1

1
2 Voltmeter (0- 30 V) MC

3 CRO 1

4 Patch Cards Required

(i) MOSFET based Step down Chopper or Buck Converter:

Formula:

(i) The Average output Voltage, Vo = α Vin

Where,
Vin = Input voltage (Volts)

α = Duty Cycle = Ton / T

Ton = On Time, Toff = Off Time & T = Chopping Time = Ton + Toff

(ii) Gain = Vo / Vin

Precaution:

1. Ensure all the switches are in OFF position.

2. Keep the SW1 in OFF Position.
3. Keep SW2 switch in BUCK mode.

35
4. Keep the potentiometer in Minimum position.

CIRCUIT DIAGRAM:

STEP DOWN CHOPPER

MODEL GRAPH:

36
TABULATION:

α = Ton / T Vo = α Vin
Vin (Volts) Ton
Theoretical Practical
S. No.
1.

2.

3.

4.

5.

MODEL CALCULATION:

PROCEDURE:

1. Connect the terminals P5 to P15 and P6 to P16 using patch chords.

2. Connect the terminals D to P17 and S to P20 and G to P18 using patch chords.
3. Connect the terminals L1 to P20 and L2 to P21 using patch chords.
4. Switch ON the main supply.
5. Switch ON S1 switch.
6. Note down the PWM duty cycle using CRO and corresponding output voltages are noted using
voltmeter.(PWM – P1&P2 terminals)
7. Set different PWM duty cycle ratio by adjusting the potentiometer and note down the corresponding
PWM value and output voltage.

(ii) MOSFET based Step up Chopper or Boost Converter:

37
FORMULA:

(i) The Average output Voltage, Vo = Vin / (1- α)

Where,
α = Duty Cycle = Ton / T

(ii) Gain = Vo / Vin

PRECAUTION:

1. Ensure all the switches are in OFF position.

2. Keep the SW1 in OFF Position.
3. Keep SW2 switch in BOOST mode.
4. Keep the potentiometer in Minimum position.

PROCEDURE:

1. Connect the terminals P5 to P7 and P6 to P8 using patch chords.

2. Connect the terminals D to P11 and S to P12 and G to P10 using patch chords.
3. Connect the terminals L1 to P9 and L2 to P11 using patch chords.
4. Switch ON the main supply.
5. Switch ON S1 switch.
6. Note down the PWM duty cycle using CRO and corresponding output voltages are noted using
voltmeter.(PWM – P1&P2 terminals)
7. Set different PWM duty cycle ratio by adjusting the potentiometer and note down the corresponding
PWM value and output voltage.

CIRCUIT DIAGRAM:

STEP UP CHOPPER

38
MODEL GRAPH:

TABULATION:

α = Ton / T Vo = α Vin
Vin (Volts) Ton
Theoretical Practical
S. No.
1.

2.

3.

4.

5.

39
MODEL CALCULATION:

POST LAB WORK

RESULT ANALYSIS:

Exp No: 6 Date:

SINGLE PHASE INVERTER

OBJECTIVE
To simulate the single phase inverter circuit and obtain corresponding waveforms using MATLAB
Simulator.
APPARATUS REQUIRED
MATLAB Simulator Library browser
1. 4 – IGBT
2. DC Voltage source
3. Voltage and Current Measurement
4. Pulse Generator
5. Scope
6. Powergui

PROCEDURE
1. Open MATLAB Simulator and select Simulink file to build required circuit.
2. Collect required blocks from Simulink library like MOSFET, dc source, voltmeter etc.
3. Connect the circuit as it circuit diagram and start the simulation for required time.
4. Measure Dc voltage and Ac voltage and current in output of the rectifier and save the file.

40
CIRCUIT DIAGRAM:

SIMULATION DIAGRAM:

WAVEFORM:

41
POST LAB WORK
RESULT ANALYSIS

Date:
Exp No: 7
ZVS AND ZCS CONVERTER

AIM:
To study Zero Voltage Switching resonant converter and Zero Current Switching resonant
converter, obtain its output waveforms with simulation and module.

Apparatus Required:
S.No Item Range Type Quantity
1 Resonant converter Module 1
2 Loading Rheostat 100 ohm/2A 1
3 CRO 20 MHZ 1
4 Patch cords 15
5 Mutisim

PROCEDURE:
1. Make the connections as per the circuit diagram.

42
2. Switch on the resonant converter module.
3. Keep the frequency knob of the firing circuit kit below the resonance Frequency of power circuit kit
4. Switch on the DC power supply connected to the power circuit kit and Switch on the firing circuit kit
5. Vary the frequency knob of the firing circuit kit 6. Observe the waveform from the CRO.
7. Repeat the same procedure for different values of switching frequency.
8. Switch of the power supply and disconnect the connection

MODEL GRAPH FOR ZVS CONVERTER

MODEL GRAPH FOR ZCS CONVERTER

43
POST LAB WORK
RESULT ANALYSIS
Exp No: 8 Date:
SINGLE PHASE AC VOLTAGE CONTROLLER

OBJECTIVE
To simulate the AC Voltage Controller circuit and obtain corresponding waveforms using
MULTISIM Simulator.

APPARATUS REQUIRED

MULTISIM Simulator Library browser

1. 2 – SCR
2. AC Voltage source
3. Voltage and Current Measurement
4. Pulse Generator
5.Resistance
6.Oscilloscope

PROCEDURE

1. Open Multisim Simulator and select file to build required circuit.

2. Collect required blocks from library like SCR, AC source, voltmeter etc.
3. Connect the circuit as it circuit diagram and start the simulation for required time.
4. Measure Dc voltage and Ac voltage and current in output of the ac voltage controller and save the
file.

CIRCUIT DIAGRAM:

44
SIMULATION DIAGRAM:

45
POST LAB WORK
RESULT ANALYSIS

Exp No: 9A Date:

THREE PHASE FULLY CONTROLLED RECTIFIER

OBJECTIVE
To simulate the single phase inverter circuit and obtain corresponding waveforms using MATLAB
Simulator.

APPARATUS REQUIRED
MATLAB Simulator Library browser
1. 4 – Thyristor
2. AC Voltage source
3. Voltage and Current Measurement
4. Pulse Generator
5. Scope
6. Powergui

PROCEDURE
1. Open MATLAB Simulator and select Simulink file to build required circuit.
2. Collect required blocks from Simulink library like Thyristor, dc source, voltmeter etc.
3. Connect the circuit as it circuit diagram and start the simulation for required time.
4. Measure Dc voltage and Ac voltage and current in output of the rectifier and save the file
46
CIRCUIT DIAGRAM

SIMULATION DIAGRAM:

WAVEFORM:

47
POST LAB WORK
RESULT ANALYSIS

48
Exp No: 9B Date:
THREE PHASE BRIDGE INVERTER

(120 DEGREE AND 180 DEGREE)

OBJECTIVE
To simulate the Three phase Bridge inverter circuit and obtain corresponding waveforms using
MATLAB Software

APPARATUS REQUIRED
MATLAB Simulator Library browser
1. 6 – IGBT
2. DC Voltage source
3. Voltage and Current Measurement
4. Pulse Generator
5. Scope
6. Powergui

PROCEDURE
1. Open MATLAB and select Simulink file to build required circuit.
2. Collect required blocks from Simulink library like IGBT, dc source, voltmeter etc.
3. Connect the circuit as it circuit diagram and start the simulation for required time.
4. Measure Dc voltage and Ac voltage and current in output of the rectifier and save the file.

49
CIRCUIT DIAGRAM:
SIMULATION DIAGRAM:

180 Conduction mode

PHASE VOLTAGES FOR 120 DEGREE CONDUCTION

50
 120 conduction mode

POST LAB WORK

RESULT ANALYSIS

Exp No: 10 Date:

SPEED CONTROL OF DC AND AC MOTOR USING POWER CONVERTER CIRCUITS

OBJECTIVE

To study and analyze the performance of a close loop speed control system for DC Shunt motor
using 3 phase rectifier and to draw the performance characteristic curve in various load conditions.
APPARATUS REQUIRED

51
 MATLAB Simulator Library browser
1. SCR,Diode,Dc motor
2. Power supply
3. Voltage and Current Measurement
4. Pulse Generator
5. Scope

CIRCUIT DIAGRAM:

Fig.1 Chopper fed speed control of DC motor

PROCEDURE

1. Open MATLAB Simulator and select file to build required circuit.

2. Collect required blocks from library like SCR, DC source, voltmeter etc.
3. Connect the circuit as it circuit diagram and start the simulation for required time.
4. Measure Dc voltage and Ac voltage and current in output of the rectifier and save the file.

52
 Fig.2 Output waveform of speed control of DC motor

POST LAB WORK

RESULT ANALYSIS

53
Exp No: 11 Date:

Simulation of Single Phase half or Semi controlled Rectifier Fed Drive

Aim:
To simulate a Single Phase half or semi controlled Rectifier fed drive using MATLAB and observe its characteristics
for Dc Machine.
Apparatus Required: A PC
with MATLAB Software
Procedure:
1) Open MATLAB and open Simulink Library.
2) Create a new Simulink Model and add the following blocks from Simulink Library and Simscape Library.
S.No. Block Name Toolbox Name
1. Powergui Specialized Technology
2. AC Voltage Source Electrical Sources
3. Thyristor Power Electronics
4. Diode Power Electronics
5. Display Sinks
6. Pulse Generator Sources
7. Dc machine Machines
8. Voltage Measurement Measurements
9. Current Measurement Measurements
10. Scope Sinks
11. Bus Selector Signal Routing
12. Gain Math Operations

3) Configure the Simulation Type of powergui to Discrete and set the Sampling Time. 4) In AC Voltage Source
block, set Peak amplitude as 230V and Frequency as 50Hz.
5) Connect the blocks as given in the circuit diagram.
Parameters T1 Pulse Generator T2 Pulse Generator
Amplitude 5 5
Period(sec) 0.02 0.02
Pulse Width (%) 5 5
Phase delay (0.02/360)*(firing angle) (0.02/360)*(180+firing
angle)

6)Use Voltage Measurement, Current Measurement and Bus Selector blocks to display input voltage, output voltage,
output current, Change the Simulation Stop Time, run the model and observe the electrical and mechanical
characteristics.
Electrical Characteristics - Input voltage, output voltage and output current. Mechanical
Characteristics- Speed, Torque and Armature current (Ia).

Simulation Diagram:

54
Single Phase Half or Semi Controlled Rectifier

Output Graph-Electrical Characteristics

Mechanical Characteristics

55
Result:
Thus, the single phase Half or semi controlled rectifier fed drive was simulated using MATLAB and its characteristics
were observed for Dc Machine.

56
 Simulation of Three Phase half or Semi controlled Rectifier Fed Drive
Date:
Aim:
To simulate a Thyristor & Diode using MATLAB and observe its characteristics for DC Machine.

Apparatus Required:

A PC with MATLAB Software

Procedure:
1) Open MATLAB and open Simulink Library.
2) Create a new Simulink Model and add the following blocks from Simulink Library and Simscape Library.

S.No. Block Name Toolbox Name

1. Powergui Specialized
Technology
2. Three Phase Voltage Electrical Sources
Source
3. Thyristor Power Electronics
4. Diode Power Electronics
5. Display Sinks
6. Pulse Generator Sources
7. Dc machine Machines
8. Three Phase Voltage Measurements
Measurement
9. Current Measurement Measurements
10. Scope Sinks
11. Bus Selector Signal Routing
12. Gain Math Operation
13 Mux Signal Routing

3) Configure the Simulation Type of powergui to Discrete and set the Sampling Time. 4) In Three phase Source
block, set Peak amplitude as 281.69V and Frequency as 50Hz. 5) Set the Resistance, Forward voltage, Snubber
resistance and Snubber capacitance values in Thyristor block.
6) Set the Amplitude, Time Period, Pulse Width, Phase delay Values in Pulse Generator block.

Parameter T1 T2 T3
Amplitude 5 5 5
Time Period 0.02 0.02 0.02
Pulse Width 33.33 33.33 33.33
Phase Delay (0.02/360)*(0+α) (0.02/360)*(120+α) (0.02/360)*(240+α)

57
Simulation Diagram:
Three Phase Half or Semi Controlled Rectifier

Output Graph-Electrical Characteristics

Mechanical Characteristics

58
Result:

Thus, the Three phase Half or semi controlled rectifier was simulated using MATLAB and its
characteristics were observed for DC Machine.

59