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Ordering number:ENN778F

PNP/NPN Epitaxial Planar Silicon Transistors

2SA1207/2SC2909
High-Voltage Switching
AF 60W Predriver Applications

Features Package Dimensions

· Adoption of FBET process. unit:mm
· High breakdown voltage. 2003B
· Excellent linearity of hFE and small Cob.
[2SA1207/2SC2909]
· Fast switching speed. 5.0
4.0 4.0

5.0
0.45
0.5

2.0
0.6
0.45 0.44

14.0
1 2 3 1 : Emitter
2 : Collector
( ) : 2SA1207
3 : Base
Specifications 1.3 1.3 SANYO : NP

Absolute Maximum Ratings at Ta = 25˚C

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO (–)180 V
Collector-to-Emitter Voltage VCEO (–)160 V
Emitter-to-Base Voltage VEBO (–)5 V
Collector Current IC (–)70 mA
Collector Current (Pulse) ICP (–)140 mA
Collector Dissipation PC 600 mW
Junction Temperature Tj 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C

Electrical Characteristics at Ta = 25˚C

Ratings
Parameter Symbol Conditions Unit
min typ max
Collector Cutoff Current ICBO VCB=(–)80V, IE=0 (–)0.1 µA
Emitter Cutoff Current IEBO VEB=(–)4V, IC=0 (–)0.1 µA
DC Current Gain hFE VCE=(–)5V, IC=(–)10mA 100* 400*
Gain-Bandwidth Product fT VCE=(–)10V, IC=(–)10mA 150 MHz
Output Capacitance Cob VCB=(–)10V, f=1MHz (2.5)2.0 pF
0.08 0.3
Collector-to-Emitter Saturation Voltage VCE(sat) IC=(–)30mA, IB=(–)3mA V
(–0.14) (–0.4)
* : The 2SA1207/2SC2909 are classified by 10mA hFE as follows : Continued on next page.
Rank R S T
hFE 100 to 200 140 to 280 200 to 400

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
70502TN (KT)/71598HA (KT)/4190MO/3187AT/2255MY, TS No.778-1/4

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2SA1207/2SC2909
Continued from preceding page.
Ratings
Parameter Symbol Conditions Unit
min typ max
Turn-ON Time ton See specified Test Circuit 0.1 µs
Fall Time tf See specified Test Circuit 0.2 µs
Storage Time tstg See specified Test Circuit 1.0 µs

Switching Time Test Circuit

IB1 OUT
IN 3kΩ

IB2
2kΩ
5kΩ
50Ω
+ +
1µF 1µF

--2V 20V
IC=10IB1=--10IB2=10mA
(For PNP, the polarity is reversed.)

IC -- VCE IC -- VCE
--60 60
2SA1207 2SC2909

--50 .3 mA 50 A
--0 5m
mA

0.2
Collector Current, IC – mA

A
Collector Current, IC – mA

m
.25
0.3

--0 A
--40 40 0.2m
A
--0.2m
--30
--0.15mA 30 0.15mA

--20 --0.1mA 20 0.1mA

--0.05mA 0.05mA
--10 10

IB=0 IB=0
0 0
0 --10 --20 --30 --40 --50 --60 0 10 20 30 40 50 60
Collector-to-Emitter Voltage, VCE – V ITR02989 Collector-to-Emitter Voltage, VCE – V ITR02990
IC -- VBE IC -- VBE
--80 80
2SA1207 2SC2909
--70 VCE=--5V 70 VCE=5V
Collector Current, IC – mA

Collector Current, IC – mA

--60 60

--50 50

--40 40
C
25°C
--25°C
°C

--30 30
Ta=75°
25°C

--25°C
5
Ta=7

--20 20

--10 10

0 0
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 0 0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE – V ITR02991 Base-to-Emitter Voltage, VBE – V ITR02992

No.778-2/4

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2SA1207/2SC2909
hFE -- IC hFE -- IC
1000 5
2SA1207 2SC2909
7
VCE=--5V 25°C VCE=5V
5 3 Ta=75°C
Ta=75°C 25°C 2
3
DC Current Gain, hFE

DC Current Gain, hFE

2 --25°C
100
--25°C
100 7
7 5
5
3
3
2
2

10 10
5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 5 7 1.0 2 3 5 7 10 2 3 5 7 100
Collector Current, IC – mA ITR02993 Collector Current, IC – mA ITR02994
fT -- IC fT -- IC
5 5
2SA1207 2SC2909
Gain-Bandwidth Product, fT – MHz

Gain-Bandwidth Product, fT – MHz

3
VCE=--10V 3 VCE=10V

2 2

100 100

7 7

5 5

3 3

2 2

10 10
5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 5 7 1.0 2 3 5 7 10 2 3 5 7 100
Collector Current, IC – mA ITR02995 Collector Current, IC – mA ITR02996
Cob -- VCB Cob -- VCB
10 10
2SA1207 2SC2909
7 f=1MHz 7 f=1MHz
Output Capacitance, Cob – pF

Output Capacitance, Cob – pF

5 5

3 3

2 2

1.0 1.0

7 7

5 5
2 3 5 7 --10 2 3 5 7 --100 2 3 5 7 10 2 3 5 7 100
Collector-to-Base Voltage, VCB -- V ITR02997 Collector-to-Base Voltage, VCB -- V ITR02998
VCE(sat) -- IC VCE(sat) -- IC
5 1000
2SA1207 2SC2909
3 7
IC / IB=10 IC / IB=10
Saturation Voltage, VCE (sat) – mV

Saturation Voltage, VCE (sat) – mV

2 5

--1000 3

7 2
5
Collector-to-Emitter

Collector-to-Emitter

3
100 25°C
2
25°C 7 Ta=75°C
--100 Ta=75°C 5

7 --25°C
--25°C
5 3

3 2
5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 5 7 1.0 2 3 5 7 10 2 3 5 7 100
Collector Current, IC – mA ITR02999 Collector Current, IC – mA ITR03000

No.778-3/4

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2SA1207/2SC2909
VBE(sat) -- IC VBE(sat) -- IC
--10 10
2SA1207 2SC2909
7 7
IC / IB=10 IC / IB=10
Saturation Voltage, VBE (sat) – V

Saturation Voltage, VBE (sat) – V

5 5

3
3
2
2
25°C
Ta=--25°C
Base-to-Emitter

Base-to-Emitter
--1.0
25°C
1.0
Ta=--25°C
7

5 75°C 7

5 75°C
3

2 3
5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 5 7 1.0 2 3 5 7 10 2 3 5 7 100
Collector Current, IC – mA ITR03001 Collector Current, IC – mA ITR03002
ASO PC -- Ta
3 700
2SA1207 / 2SC2909 2SA1207 / 2SC2909
2
ICP=140mA
600

Collector Dissipation, PC – mW
Collector Current, IC – mA

100
1m
10 ms

IC=70mA
10

500
s
ms

7
0

5
400
3 DC
Op
2 era
tio 300
n
10
200
7
5
100
3
Single pulse Ta=25°C
(For PNP, minus sign is omitted.)
2 0
5 7 10 2 3 5 7 100 2 0 20 40 60 80 100 120 140 160
Collector-to-Emitter Voltage, VCE – V ITR03003 Ambient Temperature, Ta – ˚C ITR03004

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of July, 2002. Specifications and information herein are subject to
change without notice.
PS No.778-4/4

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