Mark

 Lundstrom     10/03/2014  

ECE  305  Homework  SOLUTIONS:  Week  7  

 
Mark  Lundstrom  
Purdue  University  
(October  29,  2014)  
 
1) A  silicon  diode  is  symmetrically  doped  at   N D = N A = 1015  cm-­‐3.    Answer  the  following  
questions  assuming  room  temperature,  equilibrium  conditions,  and  the  depletion  
approximation.  
 
1a)    Compute   Vbi .  
 
Solution:  
k BT ⎛ N A N D ⎞ ⎛ 1030 ⎞
Vbi = ln ⎜ 2 ⎟ = 0.026ln ⎜ 1020 ⎟ = 0.60  V  
q ⎝ ni ⎠ ⎝ ⎠
Vbi = 0.60  
 
1b)    Compute   xn , x p  and  W.  
 
1/2
⎡ 2κ ε NA ⎤
Solution: xn = ⎢ S 0 Vbi ⎥ = 0.625 µ m    
⎢⎣ q N D ( N A + N D ) ⎥⎦
 
xn = x p = 0.625 µ m  (because  the  N  and  P  regions  are  symmetrical)  

W = xn + x p = 1.25 µ m
 
 
1c)   Compute   V ( x = 0 )  and  E ( x = 0 ) .    Take  the  reference  for  the  potential  to  be  the  
neutral  P-­‐region,  which  means  that  the  neutral  P-­‐region  is  at   V = 0  and  the  
neutral  N-­‐region  is  at   V = Vbi  
 
Solution:  
By  symmetry:  
Vbi qN A 2
V (0) = = 0.30 V  or  use   V ( x = 0 ) = x  
2 2κ S ε 0 p
qN A
E ( x = 0) = x p = 9.6 × 103
κ Sε0  

E ( 0 ) = 9.6 × 103 V/cm  

ECE-­‐305     1   Fall  2014  

Mark  Lundstrom     10/03/2014  

 
HW7  solutions  (continued):  
 
1d)    Sketch   ρ ( x )  vs.  x.  
 
Solution:  
ρ N = +qN D = +1.6 × 10 −4 C/cm 3
 
ρ P = −qN A = −1.6 × 10 −4 C/cm 3  
 

 
 
2) Your  textbook  (Pierret,  SDF)  presents  the  “classic”  expressions  for  PN  junction  
electrostatics.    Simplify  these  expressions  for  a  “one-­‐sided”  P+N  junction  for  which  
N A >> N D .    Present  simplified  expressions  (when  possible)  for  the  following  
quantities:  
 
2a)      The  built-­‐in  potential,   Vbi ,  from  Pierret,  Eqn.  (5.10).  
 
Solution:  
 
kBT ⎛ N D N A ⎞
Vbi = ln ⎜  no  simplification  is  possible  
q ⎝ ni2 ⎟⎠
 
2b)      The  total  depletion  layer  depth,   W ,  from  Pierret,  Eqn.  (5.31).  
 
Solution:  
 
1/2 1/2
⎡ 2κ ε ⎛ N + N D ⎞ ⎤ ⎡ 2κ ε ⎤
W =⎢ S 0⎜ A ⎟ Vbi ⎥   N A >> N D à   W = ⎢ S 0 Vbi ⎥  
⎣ q ⎝ NDNA ⎠ ⎦ ⎣ qN D ⎦
 
 
 

ECE-­‐305     2   Fall  2014  

Mark  Lundstrom     10/03/2014  

 
HW7  solutions  (continued):  
 
2c)    The  peak  electric  field,  E ( 0 ) ,  from  Pierret,  Eqn.  (5.19)  or  (5.21).  
 
Solution:  
2Vbi 2qVbi ⎛ N D N A ⎞ 2qN DVbi
E (0) = = ⎜ ⎟    à   E ( 0 ) =  
W κ sε 0 ⎝ N A + N D ⎠ κ sε 0
 
2d)    The  electrostatic  potential,   V ( x )  from  Pierret,  Eqn.  (5.28)  
 
Solution:  
qN D
V ( x ) = Vbi −
2κ S ε 0
( xn − x ) à     V ( x ) = Vbi −
2 qN D
(W − x )2  
2κ S ε 0
Now  use  the  expression  for  W  above  to  find:  
 
V ( x ) = Vbi ⎡1 − (1 − x W ) ⎤
2
⎣ ⎦
 
 
 
3) A  silicon  diode  is  asymmetrically  doped  at   N A = 1019  cm-­‐3  and   N D = 1015  cm-­‐3  .  Answer  
the  following  questions  assuming  room  temperature,  equilibrium  conditions,  and  the  
depletion  approximation.  
 
3a)    Compute   Vbi .  
 
Solution:  
k T ⎛N N ⎞ ⎛ 1025 × 1019 ⎞
Vbi = B ln ⎜ A 2 D ⎟ = 0.026ln ⎜ 20 ⎟⎠ = 0.84  V  
q ⎝ ni ⎠ ⎝ 10
Vbi = 0.84
 
 
3b)    Compute   xn , x p  and  W.  
 
Solution:  
1/2
⎡ 2κ ε ⎤
x p ≈ 0   xn ≈ W = ⎢ S 0 Vbi ⎥ = 1.05 µ m    
⎣ qN D ⎦
 
W = 1.05 µ m  (depletion  region  mostly  on  the  N-­‐side,  the  lightly  doped  side)  

ECE-­‐305     3   Fall  2014  

Mark  Lundstrom     10/03/2014  

 
HW7  solutions  (continued):  
 
3c)    Compute   V ( x = 0 )  and  E ( x = 0 ) .  
 
Solution:  
 
V ( 0 ) ≈ 0 V  We  are  taking  our  reference  for  the  potential  to  be  the  neutral  part  of  the  
P-­‐side  far  away  from  the  junction.    Since  the  depletion  layer  is  on  the  N-­‐side,  
essentially  all  of  the  bandbending  (and  the  built-­‐in  potential  drop)  occurs  on  the  N-­‐
( )
side.     V −xn = Vbi .  
 
Note  that  we  could  have  just  as  well  taken  our  reference  for  the  potential  to  be  the  
( ) ()
neutral  part  of  the  N-­‐side  far  away  form  the  junction.    Then   V x p ≈ V 0 = −Vbi .  
 
The  answer  depends  on  where  we  take  the  reference.    Potentials  are  always  arbitrary  
in  terms  of  the  chosen  reverence,  but  
  quantities  like  the  electric  field  cannot  depend  
on  where  we  choose  our  reference.
 
qN D
E (0) = W = 1.6 × 104 V/cm
κ Sε0  
E ( 0 ) = 1.6 × 104 V/cm  (plus  sign  assumes  N  region  is  on  the  left)  
 
3d)    Sketch   ρ ( x )  vs.  x.  
 
Solution:  
 

 
 
The  charge  on  the  P-­‐side  is  essentially  a  delta  function  with  the  total  charge  in  C/cm2    
equal  in  magnitude  and  opposite  in  sign  to  the  charge  on  the  N-­‐side  

ECE-­‐305     4   Fall  2014  

Mark  Lundstrom     10/03/2014  

HW7  solutions  (continued):  

 
4) This  problem  concerns  a  junction  with  a  heavily  doped  N-­‐type  region,  a  thin  intrinsic  
layer,  and  a  moderately  doped  P-­‐type  region  as  sketched  below.      Assume  the  
depletion  approximation  and  assume  that  the  width  of  the  depletion  region  on  the  P-­‐
side  is  greater  than  the  thickness  of  the  intrinsic  layer.  

 
4a)     Sketch  the  electric  field  vs.  position  assuming  the  depletion  approximation.  
 
Solution:  

       
 
4b)     Using  the  sketch  in  4a),  develop  an  expression  for  the  depletion  layer  width  in  
the  p-­‐region,  W.    Your  answer  should  be  in  terms  of   Vbi  and   N A .    
 
Solution:    
1
The  area  under  the  curve  is  the  built-­‐in  potential:    E max xi + E max (W − xi ) = Vbi    
2
2Vbi
E max =  
( xi + W)
dE −qN A
We  can  get  another  expression  for  E max  from  the  Poisson  equation:     =
dx κ S ε 0  
 

ECE-­‐305     5   Fall  2014  

Mark  Lundstrom     10/03/2014  

HW7  solutions  (continued):  

 
qN A
E max =
κ Sε0
(W − xi )  
2κ S ε 0Vbi
Now  equate  the  two  expressions  for  E max to  find:     W 2 − xi2 =  
qN A

2κ S ε 0Vbi
Finally     W = + xi2  
qN A
 
Note  that  for   xi = 0 ,  we  get  the  expected  result.  
 
4c)     Compare  this  structure  to  the  same  structure  without  the  intrinsic  layer.  Explain  
what  effect  the  intrinsic  layer  will  have  on  the  built-­‐in  potential,   Vbi .  
 
Solution:  
The  built  in  potential  develops  to  align  the  Fermi  levels  at  the  two  ends  of  the  
device.    It  does  not  matter  what  is  in  between.  
 
No  effect  on  Vbi.  
 
 
4d)     Compare  this  structure  to  the  same  structure  without  the  intrinsic  layer.    Explain  
what  effect  the  intrinsic  layer  will  have  on  the  maximum  electric  field  in  the  
junction.  
 
Solution:  
We  can  see  from  the  equations  in  4b)  that  W  will  be  bigger  so  E max  will  be  
reduced.    Another  way  to  see  this  is  from  the  fact  that  potential  is  integral  of  
electric  field  vs.  position.    As  we  increase  the  distance  over  which  there  is  an  
electric  field,  then  a  smaller  electric  field  gives  the  same  potential  drop.  
 
 
 
 
 
 
 
 
 
 
 
 

ECE-­‐305     6   Fall  2014  

Mark  Lundstrom     10/03/2014  

 
HW7  solutions  (continued):  
 
5)   Semiconductor  devices  often  contain  “high-­‐low”  junctions  for  which  the  doping  
density  changes  magnitude,  but  not  sign.    The  example  below  shows  a  high-­‐low  step  
junction.    Answer  the  questions  below.  
 

         
 
 
5a)  Sketch  an  energy  band  diagram  for  this  junction.  
 
Solution:  
 

     
 
 
 
 
 
 
 
 

ECE-­‐305     7   Fall  2014  

Mark  Lundstrom     10/03/2014  

HW7  solutions  (continued):  

 
5b)  Sketch   V ( x )  
Solution:  
 

 
 
5c)    Sketch  E ( x )  
 
Solution:  

     
 
5d)    Sketch   ρ ( x )  vs.  x.  
 
Solution:  

     

ECE-­‐305     8   Fall  2014  

Mark  Lundstrom     10/03/2014  

HW7  solutions  (continued):  

 
5e)    Name  the  charged  entities  responsible  for ρ ( x )  in  5d).  
 
Solution:  
For  x  <  0,  the  charge  is  a  depletion  charge.    Mobile  electrons  leave  the  heavily  doped  
side  of  the  junction  leaving  behind  a  concentration,  ND1,  of  ionized  donors.      
 
For  x  >  0,  the  charge  is  due  to  the  additional  mobile  electrons  that  have  spilled  over  
from  the  heavily  doped  side.    This  is  NOT  a  depletion  region.  
 
5f)      Explain  why  the  depletion  approximation  cannot  be  used  for  this  problem.  
 
Solution:  
Because,  as  explained  above,  there  is  a  depletion  region  on  only  ONE  side  of  the  
junction.    We  could  use  the  depletion  approximation  there,  but  not  on  the  lightly  
doped  side.  
 

ECE-­‐305     9   Fall  2014