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ECE 606 Homework 2: Week 2: Mark Lundstrom 1/13/2013

This document contains Mark Lundstrom's homework assignment for ECE 606 Week 2. It includes 6 problems related to quantum mechanics, particle wavefunctions, and electron tunneling. The problems calculate properties like position, momentum, and energy for free particles and particles in infinite potential wells, and examine electron tunneling through barriers.

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54 views3 pages

ECE 606 Homework 2: Week 2: Mark Lundstrom 1/13/2013

This document contains Mark Lundstrom's homework assignment for ECE 606 Week 2. It includes 6 problems related to quantum mechanics, particle wavefunctions, and electron tunneling. The problems calculate properties like position, momentum, and energy for free particles and particles in infinite potential wells, and examine electron tunneling through barriers.

Uploaded by

HYODDO
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Mark

 Lundstrom     1/13/2013  

ECE  606  Homework  2:    Week  2    


Mark  Lundstrom  
Purdue  University  
 
1) Consider  a  free  particle  normalized  so  that  the  probability  of  finding  it  between  x  =  0  
and  x  =  L  is  1.      The  wavefunction  is  
1 ikx
ψ ( x) = e    
L
 
a) Compute   x and  provide  an  interpretation.  
b) Compute   px  
c) Compute   px2  
px2
d) Show  that   = E − U 0  ,  where   U 0  is  the  spatially  constant  potential  energy.  
2m0
 
 
2) Consider  the  n  =  1  eigenfunction  of  an  infinite,  1D  potential  well  of  width,  a.    The  
potential  energy,  U(x)  is  zero  inside  the  well  and  infinity  outside  the  well.  
 
a)    Show  that  the  normalized  wavefunction  is    
2
    ψ 1 ( x) = sin (π x a )    
a
b)    Compute   x and  provide  an  interpretation.  
c)    Compute   px  and  provide  an  interpretation.  
d)    Compute   px2  
px2  2π 2
e)    Show  that   = = ε1  ,  
2m0 2m0 a 2
where   ε1 is  the  ground  state  energy.  
 
 
3) In  optical  lithography,  patterns  are  exposed  with  light.    In  electron  beam  lithography,  
patterns  are  exposed  with  electrons.    Commonly-­‐used  optical  lithography  systems  use  
a  wavelength  of  193  nm.      The  advantage  of  electron  beam  lithography  is  better  
resolution  because  electrons  have  small  wavelengths.    Electron-­‐beam  lithography  is  
typically  done  with  electron  energies  between  20  keV  and  100  keV.    
Assume  an  electron  energy  of  100  keV.    What  is  the  wavelength  of  these  electrons  in  
nanometers  (nm)?  
(Relativistic  effects  begin  to  become  important  at  these  energies,  but  you  may  ignore  
them  for  this  calculation.)  

ECE-­‐606     1   Spring  2013  


Mark  Lundstrom     1/13/2013  

 
4) Consider  a  unit  amplitude  wave  with   0 < E < U 0  incident  from  the  left  in  the  figure  
below.  
 
a) Derive  an  expression  for  the  decay  constant,   α ,  for  the  region  x  >  0.  
 
b)     Assume  that  the  region  for  x  <  0  represents  silicon  and  the  region  x  >  0  
represent  the  energy  barrier  presented  by  SiO2.    Assume  an  electron  with  a  
thermal  energy  of   3k BT / 2  is  incident  on  the  barrier  with  a  height  of  3.38  eV.    
Approximately  how  far  into  the  SiO2  does  the  electron  penetrate?  (You  may  
assume  that  the  temperature  is  300K,  the  mass  of  the  electron  is  m0,  and  that  
the  penetration  depth  is  about   1 α .)  
 
(As  an  additional  exercise,  you  should  be  able  to  derive  an  expression  for  the  
magnitude  of  the  reflection  coefficient,   R = r 2 and  show  that  R  =  1.)  
 

   
 
 
5)   Consider  a  unit  amplitude  wave  with   E > U 0  incident  from  the  left  in  the  figure  
below.    Derive  an  expression  for  the  magnitude  of  the  reflection  coefficient,   R = r 2 .  
Express  your  answer  in  terms  of  energy,  E.    Explain  how  R  varies  as  E  becomes  much  
larger  than  U0.  
 
 

 
 

ECE-­‐606     2   Spring  2013  


Mark  Lundstrom     1/13/2013  

 
6) The  sketch  of  energy  vs.  position  shown  below  is  similar  to  that  found  at  the  oxide  
semiconductor  interface  in  a  MOSFET.  Sketch  the  expected  form  of   ψ ( x )  for  an  
electron  with  energy,   ε1    and  explain  how  you  arrived  at  your  result.  
 

 
 
 

ECE-­‐606     3   Spring  2013  

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