AONY36352

30V Dual Asymmetric N-Channel MOSFET

General Description Product Summary

Q1 Q2
• Trench Power MOSFET technology VDS 30V 30V
• Low RDS(ON) ID (at VGS=10V) 49A 85A
• Low Gate Charge RDS(ON) (at VGS=10V) <5.3mΩ <2mΩ
• High Current Capability
RDS(ON) (at VGS=4.5V) <9.1mΩ <2.5mΩ
• RoHS and Halogen-Free Compliant

Applications 100% UIS Tested

100% Rg Tested
• DC/DC Converters in Computing
• POL in Telecom and Industrial

DFN 5X6D
Top View Bottom View Top View Bottom View

G2
S2

S1/D2 G1
D1

D1 Pin 1
Pin 1

Orderable Part Number Package Type Form Minimum Order Quantity

AONY36352 DFN 5x6D Tape & Reel 3000

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Max Q1 Max Q2 Units
Drain-Source Voltage VDS 30 30 V
Gate-Source Voltage VGS ±20 ±12 V
Continuous Drain TC=25°C 49 85G
ID
Current TC=100°C 31 72.5 A
Pulsed Drain Current C IDM 100 235
Continuous Drain TA=25°C 18.5 30
IDSM A
Current TA=70°C 15 24
Avalanche Current C IAS 50 80 A
C
Avalanche energy L=0.01mH EAS 13 32 mJ
TC=25°C 21 45
PD W
Power Dissipation B TC=100°C 8.5 18
TA=25°C 3.1 3.1
PDSM W
Power Dissipation A TA=70°C 2 2
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Q1 Typ Q2 Max Q1 Max Q2 Units
Maximum Junction-to-Ambient A t ≤ 10s 30 30 40 40 °C/W
RqJA
Maximum Junction-to-Ambient A D Steady-State 50 50 65 65 °C/W
Maximum Junction-to-Case Steady-State RqJC 4.6 2.2 6 2.8 °C/W

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 AONY36352

Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 30 V
VDS=30V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current μA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.3 1.7 2.1 V
VGS=10V, ID=20A 4.4 5.3
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 6.7 8.1
VGS=4.5V, ID=20A 7.3 9.1 mΩ
gFS Forward Transconductance VDS=5V, ID=20A 53 S
VSD Diode Forward Voltage IS=1A, VGS=0V 0.7 1 V
IS Maximum Body-Diode Continuous Current 30 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 820 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 230 pF
Crss Reverse Transfer Capacitance 35 pF
Rg Gate resistance f=1MHz 0.9 1.8 2.7 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 11 20 nC
Qg(4.5V) Total Gate Charge 5 10 nC
VGS=10V, VDS=15V, ID=20A
Qgs Gate Source Charge 2.6 nC
Qgd Gate Drain Charge 1.5 nC
tD(on) Turn-On DelayTime 6 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=0.75W, 4 ns
tD(off) Turn-Off DelayTime RGEN=3W 18 ns
tf Turn-Off Fall Time 2.5 ns
trr Body Diode Reverse Recovery Time IF=20A, di/dt=500A/ms 9.5 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/ms 12.5 nC

A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RqJA is the sum of the thermal impedance from junction to case RqJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev.1.0: January 2018 www.aosmd.com Page 2 of 10

 AONY36352

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

80 80
10V 4.5V
VDS=5V
4V
60 60

3.5V
ID (A)

ID (A)
40 40
125°C

VGS=3V
20 20
25°C

0 0
0 1 2 3 4 5 0 1 2 3 4 5 6

VDS (Volts) VGS (Volts)

Figure 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

10 1.8

VGS=4.5V Normalized On-Resistance

8 1.6 VGS=10V
ID=20A
RDS(ON) (mW)

6 1.4

4 1.2

VGS=10V VGS=4.5V
2 1
ID=20A

0 0.8
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175

ID (A) Temperature (°C)

Figure 3: On-Resistance vs. Drain Current and Gate Figure 4: On-Resistance vs. Junction Temperature
Voltage (Note E) (Note E)

25 1.0E+01
ID=20A
1.0E+00
20
125°C
1.0E-01
RDS(ON) (mW)

15
IS (A)

125°C 1.0E-02
10 25°C
1.0E-03

5
1.0E-04
25°C

0 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0
VSD (Volts)
VGS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
(Note E)

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 AONY36352

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1000
VDS=15V
Ciss
ID=20A
8 800

Capacitance (pF)
VGS (Volts)

6 600

4 400
Coss

2 200
Crss

0 0
0 3 6 9 12 0 5 10 15 20 25 30

Qg (nC) VDS (Volts)

Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0 200
TJ(Max)=150°C
TC=25°C
100.0 160
RDS(ON)
limited 10ms
Power (W)

120
ID (Amps)

10.0
100ms
DC 1ms
1.0 80
10ms
TJ(Max)=150°C
0.1 TC=25°C 40

0
0.0
0.0001 0.001 0.01 0.1 1 10 100
0.01 0.1 1 10 100
VDS (Volts) Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
VGS> or equal to 4.5V Case (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)

10
D=Ton/T In descending order
ZqJC Normalized Transient

TJ,PK=TC+PDM.ZqJC.RqJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

RqJC=6°C/W
1

0.1 Single Pulse PDM

Ton
T
0.01
1E-05 0.0001 0.001 0.01 0.1 1 10 100

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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 AONY36352

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

25 60

50
20
Power Dissipation (W)

Current rating ID (A)

40
15
30
10
20

5
10

0 0
0 25 50 75 100 125 150 0 25 50 75 100 125 150

TCASE (°C) TCASE (°C)

Figure 12: Power De-rating (Note F) Figure 13: Current De-rating (Note F)

10000
TA=25°C

1000
Power (W)

100

10

1
1E-05 0.001 0.1 10 1000

Pulse Width (s)

Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)

10
ZqJA Normalized Transient

D=Ton/T In descending order

Thermal Resistance

TJ,PK=TA+PDM.ZqJA.RqJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

1 RqJA=65°C/W

0.1

PDM
0.01 Single Pulse
Ton
T
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)

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 AONY36352

Q2 Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 30 V
VDS=30V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current μA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.1 1.5 1.9 V
VGS=10V, ID=20A 1.67 2
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 2.4 3
VGS=4.5V, ID=20A 2 2.5 mΩ
gFS Forward Transconductance VDS=5V, ID=20A 165 S
VSD Diode Forward Voltage IS=1A, VGS=0V 0.7 1 V
IS Maximum Body-Diode Continuous Current 50 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 2555 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 520 pF
Crss Reverse Transfer Capacitance 75 pF
Rg Gate resistance f=1MHz 1.2 2.4 3.6 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 37 52 nC
Qg(4.5V) Total Gate Charge 16 25 nC
VGS=10V, VDS=15V, ID=20A
Qgs Gate Source Charge 8 nC
Qgd Gate Drain Charge 3 nC
tD(on) Turn-On DelayTime 9 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=0.75W, 4 ns
tD(off) Turn-Off DelayTime RGEN=3W 38 ns
tf Turn-Off Fall Time 6 ns
trr Body Diode Reverse Recovery Time IF=20A, di/dt=500A/ms 14 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/ms 26.5 nC

A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RqJA is the sum of the thermal impedance from junction to case RqJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev.1.0: January 2018 www.aosmd.com Page 6 of 10

 AONY36352

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

80 80
3V
VDS=5V

60 60
4.5V

10V
ID (A)

ID (A)
40 40
125°C

20 20
25°C
VGS=2.5V

0 0
0 1 2 3 4 5 0 1 2 3 4 5

VDS (Volts) VGS (Volts)

Figure 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

3 1.8

Normalized On-Resistance
1.6 VGS=10V
2.5 ID=20A
RDS(ON) (mW)

VGS=4.5V
1.4
2
1.2

1.5 VGS=4.5V
1
ID=20A
VGS=10V

1 0.8
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175

ID (A) Temperature (°C)

Figure 3: On-Resistance vs. Drain Current and Gate Figure 4: On-Resistance vs. Junction Temperature
Voltage (Note E) (Note E)

6 1.0E+01
ID=20A
5 1.0E+00

125°C
4 1.0E-01
RDS(ON) (mW)

125°C
IS (A)

3 1.0E-02
25°C
2 1.0E-03

1 1.0E-04
25°C

0 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics
(Note E) (Note E)

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 AONY36352

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 3500
VDS=15V
ID=20A 3000
8 Ciss
2500

Capacitance (pF)
VGS (Volts)

6
2000

4 1500

1000 Coss
2
500 Crss

0 0
0 10 20 30 40 0 5 10 15 20 25 30

Qg (nC) VDS (Volts)

Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0 500
TJ(Max)=150°C
TC=25°C
100.0 RDS(ON) 400
10ms
limited
Power (W)

100ms 300
ID (Amps)

10.0
DC 1ms
10ms 200
1.0
TJ(Max)=150°C
TC=25°C 100
0.1

0
0.0
0.0001 0.001 0.01 0.1 1 10 100
0.01 0.1 1 10 100
Pulse Width (s)
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
VGS> or equal to 4.5V Case (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)

10
D=Ton/T In descending order
ZqJC Normalized Transient

TJ,PK=TC+PDM.ZqJC.RqJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

RqJC=2.8°C/W
1

0.1 PDM
Single Pulse

Ton
T
0.01
1E-05 0.0001 0.001 0.01 0.1 1 10 100

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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 AONY36352

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

50 100

40 80
Power Dissipation (W)

Current rating ID (A)

30 60

20 40

10 20

0 0
0 25 50 75 100 125 150 0 25 50 75 100 125 150

TCASE (°C) TCASE (°C)

Figure 12: Power De-rating (Note F) Figure 13: Current De-rating (Note F)

10000
TA=25°C

1000
Power (W)

100

10

1
1E-05 0.001 0.1 10 1000

Pulse Width (s)

Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)

10
ZqJA Normalized Transient

D=Ton/T In descending order

Thermal Resistance

TJ,PK=TA+PDM.ZqJA.RqJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

1 RqJA=65°C/W

0.1

PDM
0.01 Single Pulse
Ton
T
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)

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 AONY36352

Figure
GateA: Charge
Gate Charge Test Circuit
Test Circuit & Waveforms
& Waveform
Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Figure B: ResistiveSwitching
Resistive Switching Test
Test Circuit
Circuit &&Waveforms
Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs td(on) tr td(off) tf

ton toff

Figure C: Unclamped
Unclamped InductiveSwitching
Inductive Switching (UIS)
(UIS) Test
Test Circuit
Circuit&&Waveforms
Waveforms
L 2
Vds EAR= 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Figure
DiodeD:Recovery
Diode Recovery Test Circuit
Test Circuit & Waveforms
& Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

Rev.1.0: January 2018 www.aosmd.com Page 10 of 10