FSC (2 Year) Chap # 18: Electronics
FSC (2 Year) Chap # 18: Electronics
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F Sc (2nd Year) Chap # 18: Electronics
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F Sc (2nd Year) Chap # 18: Electronics
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F Sc (2nd Year) Chap # 18: Electronics
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F Sc (2nd Year) Chap # 18: Electronics
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F Sc (2nd Year) Chap # 18: Electronics
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F Sc (2nd Year) Chap # 18: Electronics
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F Sc (2nd Year) Chap # 18: Electronics
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F Sc (2nd Year) Chap # 18: Electronics
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F Sc (2nd Year) Chap # 18: Electronics
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F Sc (2nd Year) Chap # 18: Electronics
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F Sc (2nd Year) Chap # 18: Electronics
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F Sc (2nd Year) Chap # 18: Electronics
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F Sc (2nd Year) Chap # 18: Electronics
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F Sc (2nd Year) Chap # 18: Electronics
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F Sc (2nd Year) Chap # 18: Electronics
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F Sc (2nd Year) Chap # 18: Electronics
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F Sc (2nd Year) Chap # 18: Electronics
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F Sc (2nd Year) Chap # 18: Electronics
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F Sc (2nd Year) Chap # 18: Electronics
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F.Sc. Physics (2ND Year) Exercise Short Questions
EXERCISE SHORT QUESTIONS
CHAPTER # 18: ELECTRONICS
Q # 1: How does the motion of an electron in n-type substance differ from the motion in a p-type
substance?
Ans. In n-type material, the electrons are the majority carriers. They move from lower potential to higher
potential.
In p-type materials, the holes are the majority carriers. They move from higher potential to lower
potential.
Q # 2: What is the net charge on an n-type or p-type substance?
Ans. The penta-valent or trivalent impurity atoms bombard on intrinsic semiconductor, to form it n-type or p-
type material, are neutral. Therefore, an n-type or p-type substance is an electrically neutral substance.
Q # 3: The anode of a diode is 0.2 V positive with respect to its cathode. Is it forward biased?
Ans. A junction diode is said to be forward biased if its P-type region is connected to the positive terminal and
N-type region is connected to the negative terminal of the battery. Since anode (p-type) is at positive potential
0.2 V with respect to its cathode (n-type), so it satisfied the condition of forward biased.
But the potential barrier of Ge and Si are 0.3 V and 0.7 V respectively, so such small value of voltage
can’t produce forward current.
Q # 4: Why charge carries are not present in the depletion region?
Ans. When a p-type semiconductor is brought close an n-type to form a PN-junction, and then the free
electrons near the junction in the n region begin to diffuse across the junction into the p-type region where
they combine with holes near the junction, and neutralize holes in p-type. As a result, a charge less region is
formed across the junction in which charge carriers are not present. This region is known as depletion region.
Q # 5: What is the effect of forward and reverse biasing of diode on the width of depletion region?
Ans. When the diode is forward biased, the width of depletion region is decreased. When the diode is reversed
biased, the width of depletion region is increased.
Q # 6: Why ordinary silicon diodes don’t emit light?
Ans. The potential barrier across the pan-junction of Si is 0.7 V. so in forward biased condition, when electron
recombine with the hole, a photon of light having 0.7 eV energy is released. As the energy of emitted photon
lies in infrared region of electromagnetic spectrum. That’s why we don’t observe light emission from Si
diode.
Q # 7: Why a photo diode is operated in reverse biased state?
Ans. Photo diode is used for detection of light. It is operated in the reverse biased condition.
When no light is incident on the junction, the reverse current is almost negligible.
When a photo diode is exposed to light, the reverse current increases with intensity of light.
Thus the reverse biased condition of a photo diode is useful to detection of light.
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F.Sc. Physics (2ND Year) Exercise Short Questions
Q # 8: Why is the base current in a transistor very small?
Ans. The base of a transistor is kept thin so that a very few charge carriers (electrons or holes)from emitter
may combine with electrons or holes of base. This result in larger collector current, hence larger current and
power gain to transistor become possible.
Q # 9: What are the biasing requirements of the junction of a
transistor for its normal operation? Explain how these
requirements are met in a common emitter amplifier?
Ans. For the normal operation of transistor, the EB (emitter-base)
junction of transistor is forward biased and CB (collector-base)
junction of transistor is reversed.
In npn-transistor in common emitter configuration, the EB-
junction is forward biased by battery and CB-junction is reversed
biased by battery, as shown in the figure.
B.Sc. Thermodynamics
(In accordance with syllabus of UNIVERSITY OF THE PUNJAB AND UNIVERSITY OF SARGODHA)
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F.Sc. Physics (Part-II) Solved Numerical Problems
NUMERICAL PROBLEMS
F.Sc. Physics, Chapter # 18: ELECTRONICS
(c)
18.2 Fig. shows a transistor which operates a relay as the switch S is closed. The relay is energized by a current of
10 mA. Calculate the value
When the transistor conducts, its can be assumed to be 0.6 V.
Calculations: As
18.3 In circuit
i. base current
ii. collector current
iii. potential drop across
iv.
Given Data: , , , ,
To Determine: (a) base current , (b) collector current ,
(c) potential drop across , (d)
Calculations: (a) Applying KVR on Input Circuit:
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F.Sc. Physics (Part-II) Solved Numerical Problems
18.4 Calculate the output of the op-amp circuit shown in Fig.
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