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    Bipolar Transistor: Description

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    dok wahab siddik
    This document summarizes the specifications and characteristics of a silicon NPN bipolar transistor in a TO-39 case. It provides the absolute maximum ratings, electrical characteristics, and dimensions of the device. The transistor features high breakdown voltage, low leakage current, and a beta useful over a wide current range, making it suitable for amplifier and switching applications.

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    Bipolar Transistor: Description

    Uploaded by

    dok wahab siddik
    23 views2 pages
    This document summarizes the specifications and characteristics of a silicon NPN bipolar transistor in a TO-39 case. It provides the absolute maximum ratings, electrical characteristics, and dimensions of the device. The transistor features high breakdown voltage, low leakage current, and a beta useful over a wide current range, making it suitable for amplifier and switching applications.

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    2N3053-v2

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    This document summarizes the specifications and characteristics of a silicon NPN bipolar transistor in a TO-39 case. It provides the absolute maximum ratings, electrical characteristics, and dimensions of the device. The transistor features high breakdown voltage, low leakage current, and a beta useful over a wide current range, making it suitable for amplifier and switching applications.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    23 views2 pages

    Bipolar Transistor: Description

    Uploaded by

    dok wahab siddik
    This document summarizes the specifications and characteristics of a silicon NPN bipolar transistor in a TO-39 case. It provides the absolute maximum ratings, electrical characteristics, and dimensions of the device. The transistor features high breakdown voltage, low leakage current, and a beta useful over a wide current range, making it suitable for amplifier and switching applications.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    Bipolar Transistor

    Description:
    This is a Silicon NPN transistor in a TO-39 type case designed primarily for
    amplifier and switching applications. This device features high breakdown
    voltage, low leakage current, low capacity, and beta useful over an extremely
    wide current range.

    Absolute Maximum Ratings:


    Characteristic Symbol Rating
    Collector-Base Voltage Vcbo 60V
    Collector-Emitter Voltage Vceo 40V
    Emitter - Base Voltage Vebo 5V
    Continuous Collector Current Ic 0.7A
    Total Device Dissipation (Tc = +25°C) Pd 800mW
    Derate above 25°C 4.6mW/°C
    Total Device Dissipation (Tc = +25°C) Pd 5W
    Derate above 25°C 28.6mW/°C
    Operating Junction Temperature Range Tj -65°C to +200°C
    Storage Temperature Range Tstg -65°C to +200°C
    Thermal Resistance, Junction-to-Case Rthjc 35°C/W
    Lead Temperature
    Tl 300°C
    (During Soldering, 1/16” from case, 60sec max.)

    Electrical Characteristics: (Ta = +25ºC Unless otherwise specified)


    Parameter Symbol Test Conditions Min. Max. Unit.
    OFF Characteristics
    Collector-Emitter Breakdown Voltage V(br)ceo Ic = 0.1mA, Ib = 0 40 -
    Collector-Base Breakdown Voltage V(br)cbo Ic = 100µA, Ie = 0 60 - V
    Emitter-Base Breakdown Voltage V(br)ebo Ie = 100µA, Ic = 0 5 -
    Emitter Cut-Off Current Iebo Vbe = 4V, Ic = 0 - 0.01 µA
    On Characteristics (Note 1)
    Vce = 10V, Ic = 150mA 50 - -
    DC Current Gain hfe
    Vce = 2.5V, Ic = 150mA 40 - -
    Collector-Emitter Saturation Voltage Vce(sat) Ic = 150mA, Ib = 15mA - 1.4 V
    Base-Emitter Saturation Voltage Vbe(sat) Ic = 150mA, Ib = 15mA - 1.7 V

    Newark.com/multicomp-pro
    Farnell.com/multicomp-pro
    Element14.com/multicomp-pro

    Page <1> 16/09/19 V1.0

    This datasheet has been downloaded from http://www.digchip.com at this page


    Bipolar Transistor

    Parameter Symbol Test Conditions Min. Max. Unit.


    Small-Signal Characteristics
    Current Gain-Bandwidth Product ft Vce = 10V, Ic = 50mA, f = 20MHz 100 400 MHz
    Output Capacitance Cobo Vcb = 10V, Ie = 0, f = 1MHz - 12 pF
    Input Capacitance Cibo Vbe = 500mV, Ic = 0, f = 1MHz - 60 pF

    Note 1. Pulse Test: Pulse Width % 300μs, Duty Cycle % 1%

    Dimensions A B C D E F G H I J K
    Min. 8.5 7.74 6.09 0.4 - 2.41 4.82 0.71 0.73 12.7 42º
    Max. 9.39 8.50 6.6 0.53 0.88 2.66 5.33 0.86 1.02 - 48º
    Dimensions : Millimetres

    Part Number Table


    Description Part Number
    Bipolar Transistor, NPN, 700mA, 40V, TO-39 2N3053

    Important Notice : This data sheet and its contents (the “Information”) belong to the members of the AVNET group of companies (the “Group”) or are licensed to it. No licence is granted for
    the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change
    without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness,
    any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make
    any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or
    where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its
    negligence. Multicomp Pro is the registered trademark of Premier Farnell Limited 2019.

    Newark.com/multicomp-pro
    Farnell.com/multicomp-pro
    Element14.com/multicomp-pro

    Page <2> 16/09/19 V1.0

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