Unit1 PP CFT Mot Notes PDF
Unit1 PP CFT Mot Notes PDF
Unit1 PP CFT Mot Notes PDF
Periodic properties: Electronic configurations, Atomic and ionic sizes, ionization energies, electron-affinity, electro-
negativity (Definition and factors), oxidation states and Penetration of s, p, d and f orbitals.
Crystal field theory (CFT): salient features of CFT- Crystal field splitting patterns of transition metal ion d-orbital in
tetrahedral, octahedral and square planar geometries. Band structure of solids and effect of doping on conductance.
Molecular Orbital Theory: Linear combination of atomic orbitals (LCAO), Molecular orbital Energy level diagrams of
diatomic (N2, O2 and F2). Pi ()-molecular orbitals of Butadiene and Benzene.
Periodicity: The term periodicity is used to indicate that some characteristic properties occur in the
periodic table after definite intervals, however with a varying magnitude. Thus after starting from a certain
point on the periodic table, we are almost certain that the movement in a particular direction will show
steady increase or decrease of a said property.
Atom consists of s, p, d, and f orbitals in which s orbital can hold a maximum of 2 electrons, p orbital can
hold a maximum of 6 electrons, d orbital can hold a maximum of 10 electrons and f orbitals can hold a
maximum of 14 electrons.
Atomic size: In homo-nuclear diatomic molecules the distance from the centre of one nucleus to the
centre of another nucleus gives the bond length and half of this bond length is atomic radius.
An ion is formed when an atom undergoes a loss or gain of electrons.
M (g) M+ (g) + e– (cation formation)
A cation is formed when an atom loses the most loosely bound electron from its outermost shell.
The atom acquires a positive charge and becomes an ion (a cation).
A cation is smaller than its atom.
A cation is always smaller than its atom and an anion is always bigger than its atom e.g. Na+
is smaller than Na, Cl- is bigger than Cl.
Ionization Energy/ Ionization Potential: The amount of energy required to remove the most loosely
bound electron from an isolated gaseous atom is called ionization energy (IE).
Ionization energy (IE) is also called as ionization potential (IP) because it is measured as the minimum
potential required to remove the most loosely held electron from the rest of the atom.
IE or IP units: electron volts (eV) per atom or kilo joules per mole of atoms (kJ mol-1).
In group: The ionization energy gradually decreases in moving from top to bottom in a group.
element Li Na K Rb Cs
Ionization energy 520 496 419 403 376
Electron Affinity; Electron affinity is the amount of energy released when an electron is added to an
isolated gaseous atom.
If the atom has more tendency to accept an electron then the energy released will be large and
consequently the electron affinity will be high.
It is expressed as electron volts per atom (eV per atom) or kilo joules per mole.
Variation along a period: The size of an atom decreases and the nuclear charge increases on moving
across a period. This results in greater attraction for the incoming electron. Hence the electron affinity
increases in a period from left to right.
Variation down a group – As we move down a group the atomic size and nuclear size increases. As the
effect of increase in atomic size is more pronounced the additional electron feels less attracted by the
large atom, consequently the electron affinity decreases.
Electronegativity: The relative tendency of an atom in a molecule to attract a shared pair of electrons
towards itself is termed as Electronegativity.
The value of electronegativity of an element describes the ability of its atom to compete for electrons with
the other atom to which it is bonded. Electronegativity is however not the property of an isolated atom.
Electronegativity is measured on a number of scale levels, the most commonly used are of Pauling or
Mullikan.
Variation along a period: As the nuclear charge increases from going left to right in a period because
the electrons enter the same shell, the shielding is less effective.
Variation down the group – Electronegativity decreases down the group because the atomic size
increases. The larger the size of the atom the lesser the tendency to attract the shared pair of electrons.
element Li Na K Rb Cs
electronegativity 1 0.9 0.8 0.8 0.7
Oxidation state: Oxidation state of any atom shows the ability of an atom to oxidize (to lose electrons)
or to reduce (to gain electrons) other atoms or species in a chemical compound.
It is related to the number of electrons which an atom loses, gains, or appears to use when bonding with
another atom in a compound.
It’s a difference between the numbers of electrons of the same atom in a compound, as compared with
the number of electrons in an atom of the element.
The oxidation state is the ionic charge on ions and the formal charge in the case of covalent compounds.
Example: determining the oxidation states of the elements in the compound KMnO4. By applying rule,
the oxidation state of K = +1 and four oxygen is in -2 state.
As the overall charge of the compound is zero. So the algebraic expression can be written as
1+x-8=0
Similarly the oxidation state of chromium in dichromate ion, (Cr 2O7) 2-.
Since the oxidation state for chromium is not known, so taken it as 2x for chromium
Cr2O7 2-
7(-2)/2 = 14-2 = 12/2 = +6
Examples: OsO4, KMnO4, K2Cr2O7, MnO2, FeSO4, Fe2O3, Fe3O4, FeCl3, MnSO4
P ORBITALS
The p sub shell can hold a maximum of six electrons as there are three orbitals within this sub shell. The
three p orbitals are at right angles to each other and have a lobed shape. The size of the p orbitals also
increases as the energy level or shell increases.
d ORBITALS
There are a total of five d orbitals and each orbital can hold two electrons.
d- orbitals are two groups. The first group contains the dxy, dxz and dyz orbitals.
The second group contains the dx² - y² and dz² orbitals.
Crystal Field Theory is one of the most important theory for explaining nature of bonding in
coordination compounds.
It deals with electrostatic interactions between metal ion and the ligands forming complexes with
varying geometries like octahedral, tetrahedral, square planar etc.
According to this theory, the donor electrons of the incoming ligands due to their negative
charges attract the positively charged metal ion.
Besides this, there is repulsive interaction between d electrons present on the metal ion and the
ligands.
Ligand Fields:
Strong ligand field / Low spin: In a strong ligand field, an electrons pair up, and hence is large
enough to force them to do so and fill the t2g orbitals. Thus in the presence of strong ligand field, the
complex will be low spin.
Eg: NH3 < NO2- < CN- < CO
Weak ligand field / High spin: In a Weak ligand field, is small, it can’t force the electrons to pair
up and hence the electrons will enter the eg orbitals. Thus in the presence of weak ligand field, the
complex will be High spin.
Eg: I- < Br- < Cl- < NO3- < F-
Ligands that produce strong field and causes large splitting are known as strong field ligands.
Ligands that produce weak field and causes small degree of splitting are known as weak field
ligands.
The magnitude of o and the distribution of electrons in the d-orbitals is largely influenced by
the ligand field strength.
Crystal field splitting in Tetrahedral Complexes:
A regular tetrahedral geometry is obtained when a metal cation or atom is placed the centre of
a cube and 4 ligands occupy the alternate corners of the cube.
The x, y and z axes are passed through the centre of the faces of the cube.
None of the ligands approaches directly any of the metal d-orbitals.
Instead they all approach to some degree in between the metal d-orbitals.
The crystal field splitting in tetrahedral complex is denoted by “t”, where “t” stands for
tetrahedral.
The crystal field splitting in tetrahedral complexes is shown as
Bonding Molecular orbitals: They are formed by the additive effect of the Atomic orbitals (AO’s).
ψ(Mob) = ψ(A) + ψ(B) ψ(Mob) = bonding molecular orbital wave function
It increases the electron density between the nuclei. These orbitals have lower energy than the Atomic
orbitals (AO’s) from which they are formed.
Bonding Molecular orbitals stabilizes the molecule, these are represented by ϭ, ∏ etc.
Anti-Bonding Molecular orbitals: They are formed by the substractive effect of the Atomic orbitals
(AO’s).
ψ(Moab) = ψ(A) - ψ(B) ψ(Moab) = anti bonding molecular orbital wave function
Each molecular orbital of benzene consist of a combination of the sic p orbitals. Bonding interactions
occurs when the orbitals to line up in a way that each lobe overlapping another p orbital has same signs.
An orbital lining up with an opposite sign creates an anti-bonding interaction and a node between the
orbitals.
The 3 bonds of benzene are formed by the overlapping of 6 p orbitals on 6 adjacent carbon atoms. The
6 p orbitals form 6 molecular orbitals by combining in 6 different ways. The 6 MOs are designated by
1, 2, 3, *4, *5, *6 of these 6 MOs. 1, 2, 3 are bonding molecular orbitals whereas *4, *5,
*6 are anti-bonding molecular. Each MO can accommodate 2 electrons having opposite spin.
Therefore, addition of 6 electrons to the molecular orbitals beginning from the lower energy molecular
orbital results in the filling of all 3 bonding MOs. The 3 higher energy antibonding orbitals remain empty.
Due to the presence of 3 filled bonding MOs in benzene, it possesses a closed bonding shell which makes
benzene stable.
Let us look in to a specific example of Lithium metal. The electronic configuration of Li is 1s2 2s1 2p0 when n-Li
atoms come close to form Li crystal, 3 energy bands are formed.
1s band: This band is formed by combination of large number of ‘1s’ atomic orbitals of Li atoms and hence
contains n number of energy levels. This band is completely filled and carries 2n electrons. This is inner shell band
and is not influenced by surrounding atoms, therefore narrow at equilibrium interatomic distance.
2s band: This band is formed by combination of ‘2s’ orbitals of n atoms. This band has n levels. This band is half
filled and contains ‘n-electrons’. The upper half remains vacant. This is a valency band and is significantly
influenced by surrounding atoms. It is quite spared out at equilibrium distance. Due to close spacing of energy
levels, electrons can move to energy levels in upper half at room temperature.
2p band: n atoms of Li give 3n levels in 2p band. 2s and 2p levels are so close in energy that the bands overlap
and the electrons pf 2s band gets additional energy levels differing slightly in energies to move about. The total
capacity of this overlapped band is 8n electrons and is therefore 1/8 th filled.
Effect of doping on conductance:
Doping is nothing but adding N or P type impurities to a pure semiconductor. So these impurities will contain
electrons or holes based on their impurity. When these kind of doping takes place in semiconductors and voltage
is applied, these electrons will conduct electricity. In case of holes, electrons due to potential excitation jump from
their original positions to these holes and form immobile ions at that point, whereas equal amount of holes are
created from where these electrons jumped. Thus conductivity increases due to doping.
Doping means the introduction of impurities into a semiconductor crystal to the defined modification of
conductivity. Two of the most important materials silicon can be doped with, are boron (3 valence electrons = 3-
valent) and phosphorus (5 valence electrons = 5-valent). Other materials are aluminum, indium (3-valent) and
arsenic, antimony (5-valent).
Doped semiconductors are electrically neutral. The terms n- and p-type doped do only refer to the majority charge
carriers. Each positive or negative charge carrier belongs to a fixed negative or positive charged dopant.
N- and p-doped semiconductors behave approximately equal in relation to the current flow. With increasing amount
of dopants, the number of charge carriers increases in the semiconductor crystal. Here it requires only a very small
amount of dopants. Weakly doped silicon crystals contain only 1 impurity per 1,000,000,000 silicon atoms, high
doped semiconductors for example contain 1 foreign atom per 1,000 silicon atoms.
By the introduction of a dopant with five outer electrons, in n-doped semiconductors there is an electron in the
crystal which is not bound and therefore can be moved with relatively little energy into the conduction band. Thus
in n-doped semiconductors the donator energy level is close to the conduction band edge, the band gap to overcome
is very small.
Analog, through introduction of a 3-valent dopant in a semiconductor, a hole is available, which may be already
occupied at low-energy by an electron from the valence band of the silicon. For p-doped semiconductors the
acceptor energy level is close the valence band.
When we add impurities to semiconductors we call them dopants and the process is called doping. The result is
a dilute (100 -1000 ppm) substitutional solid solution.
Band model of doped semiconductors
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