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Jefet

The document describes the construction and working principle of a thin-film transistor (TFET). It discusses how an N-channel TFET is constructed using an N-type semiconductor material with a P-type region diffused into the channel on the opposite side of a gate dielectric. When a positive voltage is applied to the gate, electrons can flow through the channel from drain to source. The document also discusses the characteristics of TFET drain current versus drain-source voltage and gate-source voltage. Circuit diagrams are provided for measuring the drain characteristics of an N-channel TFET.

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Soumyadip
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0% found this document useful (0 votes)
258 views6 pages

Jefet

The document describes the construction and working principle of a thin-film transistor (TFET). It discusses how an N-channel TFET is constructed using an N-type semiconductor material with a P-type region diffused into the channel on the opposite side of a gate dielectric. When a positive voltage is applied to the gate, electrons can flow through the channel from drain to source. The document also discusses the characteristics of TFET drain current versus drain-source voltage and gate-source voltage. Circuit diagrams are provided for measuring the drain characteristics of an N-channel TFET.

Uploaded by

Soumyadip
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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EELL-

FET 6T Rela EReet E dided ids 0TreT Mos


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Drain (D) Dan C

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do asthe chatmel,
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he O regions he curenk tomsiay of only
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atetna Ake eovmelkivg atevminak, Ne eleerona flaw
d a terminal to ermina k eument l a w g temogh

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daser to
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applked mith
appåted wilh positve
piswT( No the n ekios Are reerae ased
nd deplebon Tegion are formed. Here Tegions ye keail
dered cesed eompared do W e e g i a , P - chomwmedy 30,

he deplekion eybns penetrat e deery mo the eAYme


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as, an tauAor. A,a relult dhe ehannel a becgnamarrow the
r e e s a lom ee meTeay en 0ma ouain cwPrert TD is redueea.

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eplekon Jayer mee d cendre and dran eret: 0 L
eukdeo54 eompletly
-1 eharacerehiek,
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Oupu: OP drain ehanaekenig tie-The eurv kebween dTA CuTd


wltnge
de- tp- ewrde
A1M- 3OKTEe weltge(Ver ehmekre
eled te dreun or o pe
AS the paPA Meke:r
Gde
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hurkd
h
doain ehavackemalic
Cireit dia gam for dderminmg
FET.
an N-ehannel
tor
ake

with-Ahoried nate
FET Dram ehana ekeertie

Rinch o leir

inthotpein

VpsCmak
Aw Cham ekewsli e, Mith shepde
ode CN,)
sih Exdenk B
bm ehm eleriskes
TC

Cintut Diagmu for Adcmig i n choueevsiie


uith Remd Ras Fer N
m Chamme JFet
Taetfet chamenihi2

Trenier
euNNT

Vas-tV

Vas
sa)
mes Vos, m val

Prmelo tts Vasge The


gde- Seuree alinge Cas)dwheh
da tionent Tps c- Ccomie kely is duled Pinehot
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ilye
E dehA tte. rei 0 of Ciougp
Ae deais resta bmee as.

o chaMge it dmin dUTs o)


ceain-Sourte valhnge (Vps)
aeedd
okldnt gede- Souree vlknge ar(s).
A.C dnt vekibnee{E)= okeorth: Vas,
6rAK TekiApnse
T ao ales dgrmie

also caled Fhe ehi


DE drain relyban ce - T ro
avd , deid as

Tesitaree of the
chanmel
o Okmie
VaHage lavd.
dMin CATet (It)
o drain- Soupe-e
a reswbnre (Ros)= T
bedni
Snpee we
the gee-
ondaal h d
NEe T-e rennden
4 AAAA,
eurenk To
04
Over the dran dehned s, he
mkio o

byss T4 meybe
dendled he chage M e-3ouTEe
eunerk
a a e dndin druin Sorte vaktage{Ves)
nutavek
eltag-e(yjdk s
Cs) k omgir
1e Trn, tertduttnee
chon
3 dekned a, the Taeto e

Arplsicst Faekon-T o ehnge in geh-Sac es

i drain- Sowreee ajkage a VpsJ (Tp)


e o m a davaint eurpene:
6 vabtage Vos)
cotre
mee
meh
ndieakehow
taelor f TFeT euvrent i tpeat
Ampli-ieation over drain
ntage
e tye- Saupte Sovge vaktuge
the drait

A t druin elstrte

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