Photomicrosensor (Transmissive)

EE-SX1088
Be sure to read Precautions on page 25.

■ Dimensions ■ Features
Note: All units are in millimeters unless otherwise indicated. • General-purpose model with a 3.4-mm-wide slot.
• Mounts to PCBs or connects to connectors.
25±0.2
• High resolution with a 0.5-mm-wide aperture.
Two, R1 19±0.15
• OMRON’s XK8-series Connectors can be connected without sol-
dering. Contact your OMRON representative for information on
5±0.2 6±0.2
obtaining XK8-series Connectors.

■ Absolute Maximum Ratings (Ta = 25°C)

Two, 3.2±0.2 dia. holes Four, C0.3 Two, C2

0.5±0.1 0.5±0.1 Item Symbol Rated value

Emitter Forward current IF 50 mA
6.5±0.1
(Optical axis) (see note 1)
10±0.2
8.4±0.1 7.2±0.2
Pulse forward cur- IFP 1A
rent (see note 2)
2.5±0.1 Four, 0.5 Reverse voltage VR 4V
3±0.4 Four, 0.25
Detector Collector–Emitter VCEO 30 V
voltage
Cross section BB Cross section AA Emitter–Collector VECO ---
voltage
Collector current IC 20 mA

Internal Circuit Collector dissipa- PC 100 mW

tion (see note 1)
K C
Ambient tem- Operating Topr –25°C to 85°C
Unless otherwise specified, the perature Storage Tstg –30°C to
tolerances are as shown below. 100°C
A E
Soldering temperature Tsol 260°C
Dimensions Tolerance (see note 3)
3 mm max. ±0.3
Terminal No. Name Note: 1. Refer to the temperature rating chart if the ambient temper-
3 < mm ≤ 6 ±0.375 ature exceeds 25°C.
A Anode
6 < mm ≤ 10 ±0.45 2. The pulse width is 10 μs maximum with a frequency of
K Cathode 100 Hz.
10 < mm ≤ 18 ±0.55
C Collector 3. Complete soldering within 10 seconds.
E Emitter 18 < mm ≤ 30 ±0.65

■ Electrical and Optical Characteristics (Ta = 25°C)

Item Symbol Value Condition
Emitter Forward voltage VF 1.2 V typ., 1.5 V max. IF = 30 mA
Reverse current IR 0.01 μA typ., 10 μA max. VR = 4 V
Peak emission wavelength λP 940 nm typ. IF = 20 mA
Detector Light current IL 0.5 mA min., 14 mA max. IF = 20 mA, VCE = 10 V
Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK --- ---
Collector–Emitter saturated volt- VCE (sat) 0.15 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA
age
Peak spectral sensitivity wave- λP 850 nm typ. VCE = 10 V
length
Rising time tr 4 μs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling time tf 4 μs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA

52 EE-SX1088 Photomicrosensor (Transmissive)

■ Engineering Data
Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current
Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical)

Collector dissipation PC (mW)

Forward current IF (mA)

Ta = 25°C
IF VCE = 10 V
Forward current IF (mA)

Light current IL (mA)

Ta = −30°C
PC
Ta = 25°C
Ta = 70°C

Ambient temperature Ta (°C) Forward voltage VF (V) Forward current IF (mA)

Light Current vs. Collector−Emitter Relative Light Current vs. Ambi- Dark Current vs. Ambient
Voltage Characteristics (Typical) ent Temperature Characteristics Temperature Characteristics
(Typical) (Typical)
Ta = 25°C IF = 20 mA VCE = 10 V
VCE = 5 V 0 lx
Relative light current IL (%)
Light current IL (mA)

Dark current ID (nA)

IF = 50 mA

IF = 40 mA

IF = 30 mA

IF = 20 mA

IF = 10 mA

Collector−Emitter voltage VCE (V) Ambient temperature Ta (°C) Ambient temperature Ta (°C)
Response Time vs. Load Resist- Sensing Position Characteristics Sensing Position Characteristics
ance Characteristics (Typical) (Typical) (Typical)
120
VCC = 5 V IF = 20 mA
Ta = 25°C IF = 20 mA
VCE = 10 V
Relative light current IL (%)

VCE = 10 V
Ta = 25°C 100 Ta = 25°C
Relative light current IL (%)
Response time tr, tf (μs)

(Center of

(Center of optical axis)

optical axis)
80

d
60

40

20

0
−2.0 −1.5 −1.0 −0.5 0 0.5 1.0 1.5 2.0

Load resistance RL (kΩ) Distance d (mm)

Distance d (mm)
Response Time Measurement
Circuit
Input

90 %
Output 10 %

Input

Output

EE-SX1088 Photomicrosensor (Transmissive) 53