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Module 1 Silicon

There are two main methods to obtain single crystal silicon from polycrystalline silicon: the Czochralski method and float zone method. The Czochralski method involves melting polycrystalline silicon and pulling a seed crystal from the melt, slowly solidifying a single crystal. The float zone method uses an RF coil to melt and solidify a zone of a polycrystalline silicon rod to form a single crystal as the zone moves along the rod. Electroless plating of copper involves activating a surface, then submerging it in a bath containing copper sulfate, formaldehyde, sodium hydroxide, and EDTA, which plates a layer of copper through a reduction reaction without using electricity. This process

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Triveni M K
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151 views

Module 1 Silicon

There are two main methods to obtain single crystal silicon from polycrystalline silicon: the Czochralski method and float zone method. The Czochralski method involves melting polycrystalline silicon and pulling a seed crystal from the melt, slowly solidifying a single crystal. The float zone method uses an RF coil to melt and solidify a zone of a polycrystalline silicon rod to form a single crystal as the zone moves along the rod. Electroless plating of copper involves activating a surface, then submerging it in a bath containing copper sulfate, formaldehyde, sodium hydroxide, and EDTA, which plates a layer of copper through a reduction reaction without using electricity. This process

Uploaded by

Triveni M K
Copyright
© © All Rights Reserved
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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SINGLE CRYSTALLINE SILICON

There are two methods to obtain single crystal silicon from polycrystalline Si crystal:

1 The Czochralski method


2. The float zone method

CZOCHRALSKI METHOD
The Czochralski method developed by Polish scientist J Czochralski in 1916, is the most
preferred method of single crystal production. Czochralski method is also to grow single
crystals on metals.

The following steps are involved in the method:

a) Electronic grade polycrystalline silicon crystal is taken in quartz crucible and it is


placed in a graphite container.
b) Graphite container is heated from the surrounding heater. Heat from graphite
container is transferred homogeneously to quartz crucible.
c) Polycrystalline silicon in the quartz crucible is melted in an inert gas atmosphere
and the temperature of melt is kept constant roughly above the melting point of
silicon (1400℃).

d) A monocrystalline silicon crystal is taken as seed crystal and it is immersed into the
melt. It acts as a starting point for the crystal formation.

e) The seed crystal is pulled slowly (few cm/hour) out of the melt. During this process,
the seed crystal and crucible are counter rotated. The temperature of the melt is
reduced when it comes in contact with crystal seed and hence it solidifies. Thus a
monocrystalline silicon is pulled out of the melted silicon.
f) The crystallographic orientation of pulled crystal is same as that of seed crystal.
Thus, using a monocrystalline silicon crystal with the desired crystal orientation
( like 100, 110, or 111), a crystal with same orientation can be obtained.

g) The diameter of the pulled crystal depends upon pull speed and temperature of the
melt.
FLOAT-ZONE METHOD:
The following steps are involved in the process:
a) A polycrystalline rod is placed in a chamber with inert gas atmosphere.
b) A monocrystalline silicon crystal is used as seed crystal and it is attached to one end
of a polycrystalline silicon rod.
c) An RF coil is used to melt a small region of the polysilicon rod from single seed
crystal end.
d) As RF coil moves upwards, melted silicon is cooled down and forms monocrytalline
silicon.
e) The crystallographic orientation of the newly formed monocrystalline silicon is same
as seed crystal ( like 100, 110, or 111).
f) The RFcoil and melted zone move along the entire rod. Since most of impurities are
less soluble in the crystal than in the melted silicon, the molten zone carries the
impurities away with it.
g) The impurities concentrate near the other end of the crystal and can be removed by
cutting that part of the rod.

ELECTROLESS PLATING OF COPPER


 The surface of the article to be plated is cleaned with organic solvent, followed by sulphuric acid
and water washed and air dried.
 The activation of the surface is done by dipping in SnCl2 –HCl solution then in PdCl2– HCl
solution. The palladium metal catalyses the surface for electroless plating.
The bath employed to carry out electroless plating of copper is as shown below:
1. Metal ion solution : Copper sulphate(12g dm-3)
2. Reducing agent : Formaldehyde (8g dm-3)
3. Buffer : Sodium hydroxide (15g dm-3) and Rochelle salt (14g dm -3)
4. Complexing agent : Disodium salt of EDTA (20g dm-3 )
5. pH : 11
6. Temperature : 250C

Reactions:
At anode: 2HCHO + 4OH- 2HCOO- + 2H2O + H2 + 2e-
At cathode; Cu2+ + 2e- Cu
Net reaction: Cu2+ + 2HCHO + 4OH- Cu + 2HCOO- + 2H2O + H2
Manufacture of double sided Printed Circuit Board with copper
The electroless plating of copper is widely used for moralizing printed circuit board by producing
through hole connections. The electrical connections between two sides of the board are made by
drilling hole and then plating through holes by electroless plating.
The base object in PCB is a plastic material such as a glass fiber reinforced plastic(GRP), epoxy or
phenolic polymer over which a layer (5 to 100 μm) of copper is electroless plated. Selected areas are
protected by a photo-resist or electroplated image and the rest of the copper is etched away to produce
the circuit pattern or the track. Double sided copper clad laminates with tracks are preferred because
of feasibility of packing of more components in a smaller space. The connections between both the
sides are made by drilling hole followed by plating through holes by electroless plating.

Diagram

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