TI Designs

Automotive Precision eFuse Reference Design

TI Designs Design Features

Fuses are used in many products to avoid current • Overcurrent Limit: Up to 30 A
surges and the damage that overcurrent may cause. (Scalable to > 100 A (1))
The traditional fuses used in the automotive space are • Accuracy: > 97% (2)
low in accuracy and response time. The TIDA-00795
Automotive Precision eFuse reference design is a • Response Time: Max 10 µs (Configurable)
replacement to the traditional fuse, offering overcurrent • Configurable Delay Time to Accommodate Inrush
protection with higher accuracy and features not found Current for 10, 50, and 100 μs
in traditional fuses. This TI Design can be used as a • Target Quiescent Current: < 10 µA (3) / Channel
building block to implement a multichannel eFuse box.
It can also be used in a body control module (BCM) • Reverse Polarity Protection
and electronic control unit (ECU). • Compliance to 12-V Electrical Transients of
ISO 7637-2
Design Resources
• Configurable Hysteresis for Accuracy
TIDA-00795 Design Folder • Power off or Push Button to Reset Errors
INA300-Q1 Product Folder Featured Applications
LM9036 Product Folder
LM74610-Q1 Product Folder • Automotive eFuse Box
• Body Control Module
• High-Side Smart Switch
ASK Our E2E Experts space
space
Bi-Directional eFuse
space
space
Battery Reverse Polarity Current Sense
Battery
or Load Protection and
or Load
Switch

INA300 INA300
t t
Transient Transient
Suppression Suppression

LM9036
t

Ground

Copyright © 2016, Texas Instruments Incorporated

(1)
Scalable solution based on selection of components
(2)
Accuracy specified for 30-A current limit (configurable)
space (3)
Expected for single-channel eFuse in multichannel eFuse box

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TIDUBK1A – April 2016 – Revised May 2016 Automotive Precision eFuse Reference Design 1
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Key System Parameters www.ti.com

An IMPORTANT NOTICE at the end of this TI reference design addresses authorized use, intellectual property matters and other
important disclaimers and information.

1 Key System Parameters

Table 1. Key System Parameters

PARAMETER SPECIFICATION MIN TYP MAX UNIT
VINPUT DC input operating voltage –28 28 V
ION_TIME
Output load current: ≤ 30 A 2.2 3 3.5 ms
Output current on time
VON_TIME
ILOAD ≤ 30 A — 2.24 — ms
Output voltage on time
VOFF_TIME ILOAD = 30 A
— 3 — ms
Output voltage off time Input source off; output current less than 10 %
Based on selection of components
Design accuracy — 97.36% — —
Value specified for 30 A (see Section 3.1.5)
Trip current response time of eFuse
Trip time — 13.8 — µs
Configured delay: 10 µs
Max current trip error
Trip error — 2.82% — —
(Measured at all current trip configurations)
Average measured turn on resistance of eFuse
Resistance — 11.05 — mΩ
design

2 Automotive Precision eFuse Reference Design TIDUBK1A – April 2016 – Revised May 2016
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www.ti.com System Description

2 System Description
Bidirectional automotive precision eFuse is a concept to replace typical fuses in cars. There is a need to
look for novel methods to replace traditional fuses. Automotive fuses that are currently available in the
market are slow in response and low in accuracy. The response time of a fuse is indirectly proportional to
the safety of the system. Factors such as high delay time and high response time can foresee damage to
loads and series path components (wiring, semiconductors, and connectors). To avoid such damages,
manufacturers are forced to design the system with additional safety margins for components, which
increases cost and weight (indirect fuel costs) of the car. An eFuse with high accuracy and low response
time increases the safety of system and reduces the need to over design components.
Cars are flexible, but the fuse is not. The fuse rating for an application is fixed. If the load current is
directly proportional to system performance, then the fuse rating has to be set at the maximum
performance with additional tolerances. This setting can cause the fuse rating to be anywhere from 50% to
80% above the normal operating current of load, which compromises the safety of the system. Instead,
this system needs a flexible efuse, which can adapt for runtime system performance.
Traditional fuses are available with standard values. Sometimes, it is difficult to get fuses for required
current limit values, which leads to compromising by choosing the nearing fuse value to protect the circuit.
This compromise is a risk for the performance of the system. An automotive system requires an eFuse
solution that is adaptable based on the application.
Frequent or long-running load operations lead to high power dissipation in series path components. The
fuse will also heat up and will have a chance of failure while stressing at top load conditions. This damage
is irreversible, forcing the customer to replace the fuse. Because early warnings are not possible to avoid
these damages, a self-healing eFuse can prevent frequent service calls. An eFuse with the appropriate
monitor and control circuits can adapt and inform its condition to avoid such damages.
Due to its internal characteristics and manufacturing quality, the operating current of the eFuse has to be
set far less than the rated fuse current (or melting current). At higher ambient temperatures, fuses blow
faster, which means it melts well below the rated current; therefore, considering the temperature rerating
parameter while selecting the fuse is required; refer to the following equation:
Normal  operating  current 
Ideal  fuse  rating =
Temperature  rerating  factor  ´   0.75
A temperature rerating factor depends on the type of fuse manufacturer and material. Usually, this
parameter varies from 12% to 40% based on the type of fuse. For an operating current of 15 A, if the
temperature rerating factor is 0.85 (15% error), then required fuse rating is 23.52 A.
15
Fuse rating = = 23.52 A
(0.85 ´ 0.75 )
23.52 A is not the standard fuse rating; so, the nearest fuse to select is 25 A. For the given operating
current of 15 A, the nearest possible fuse that can be fitted is 25 A, which is 66.67% higher. This
difference leads to overdesigning the series path components and system. This overdesign adds cost and
weight to the system. By selecting appropriate components, the eFuse reduces the delta between the
operating current and trip current.
eFuses can be used in electronic control units to replace normal fuses, they can reset and offer runtime
configurable solutions. Section 4 details the implementation of a multichannel eFuse box.

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System Description www.ti.com

Key features expected from this eFuse design include:

• Accuracy
• Response time
• Flexible operation
• Self heal or trip
• Low turn-on resistance
• Scalable applications
• Reliability
This reference design uses the INA300-Q1 to build a bidirectional eFuse that can handle trip currents up
to 30 A.

2.1 INA300-Q1
The INA300-Q1 is a high common-mode, current-sensing comparator that is configured to detect
overcurrent conditions through measuring the voltage developed across a current sensing or shunt
resistor. The device can measure this differential voltage signal on common-mode voltages that can vary
from 0 V up to 36 V, independent of the supply voltage. The device features an adjustable threshold range
that is set using a single external limit-setting resistor. A selectable hysteresis feature enables adjustable
operation of the comparator to accommodate the wide input signal range of 0 to 250 mV.
VS

VPULL-UP
INA300
HYS
Power Supply Level
(0 V to 36 V) Detection
DELAY

IN+ ALERT

+ Control
Logic
IN-

Load
LATCH

LIMIT
GND ENABLE

Copyright © 2016, Texas Instruments Incorporated

Figure 1. INA300-Q1 Block Diagram

Key features include:

• Selectable response times: 10, 50, and 100 μs
• Programmable threshold:
– Resistor configurable
– DAC output from 0 to 250 mV
• Adjustable hysteresis: 2, 4, and 8 mV
• Accuracy:
– Very low offset voltage ≤ ±500 μV (varies for different delay times)
– Very low voltage drift ≤ 0.5 μV/°C
– Low bias current ≤ 5 μA
• Wide common-mode input voltage range 0 to 36 V

4 Automotive Precision eFuse Reference Design TIDUBK1A – April 2016 – Revised May 2016
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2.2 LM9036Q
The LM9036Q ultra-low quiescent current regulator features low dropout voltage and low current in the
standby mode. With less than 25-μA ground pin current at a 0.1-mA load, the LM9036Q is ideally suited
for automotive and other battery operated systems.
The LM9036Q retains all of the features that are common to low dropout regulators, including a low
dropout PNP pass device, short circuit protection, reverse battery protection, and thermal shutdown. The
LM9036Q has a 40-V maximum operating voltage limit, a −40°C to 125°C operating temperature range,
and ±5% output voltage tolerance over the entire output current, input voltage, and temperature range.

Un regulated Voltage Regulated Voltage

Input Output
LM9036

C_IN t C_OUT

Copyright © 2016, Texas Instruments Incorporated

Figure 2. LM9036Q Block Diagram

Key features include:

• Ultra-low ground pin current (IGND ≤ 25 μA for IOUT = 0.1 mA)
• Low dropout voltage typically 200 mV at IOUT = 50 mA
• Reverse transient protection for –45 V
• Short circuit current limit and thermal shutdown protection
• Output tolerance ±5% over line, load, and temperature

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3 Block Diagram
Switch & Current Sense
Control Circuit & Activation
(SCC) (CSA)

Battery Battery
/LOAD /LOAD

INA300
t
Transient Transient
Suppression Suppression

Control circuit

INA300
t

VCC 3.3V
LM9036
t
Power Supply

Copyright © 2016, Texas Instruments Incorporated

Figure 3. eFuse Block Diagram

Automotive eFuse design is categorized into the following subsections:

• Current Sense and Activation (CSA)
• Switch and Control Circuit (SCC)
• Power Supply and Protection (transient suppression)

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3.1 Current Sense and Activation (CSA)

R1
0.006
TP2

VCC_3.3V VCC_3.3V
R3
VCC_3.3V 0.006 VCC_3.3V
R5 R6 R7 R8 R9 R10
1.00k 1.00k 0 0 1.00k 1.00k
4 TP8 4 C5 C6
C7 C8 C9 2.2µF 0.1µF VCC_3.3V
9

9
0.1µF 2.2µF 6 Latch Latch 6
DNP
2 100pF 2 GND R12
GND TP4 10k
V+ V+
5 1 1 5
VCC_3.3V VCC_3.3V
V- R14 R15 V-
Alert 10 10 Alert
1.00k 1.00k U2
U1 7 7 INA300DGS-Q1
INA300DGS-Q1 R16 R17
8

8
3 1.00k 1.00k 3

C13
R18 R19 R20 R21 R22 R23
2.26kDNP
1.00kDNP
1.00k DNP
1.00k DNP
1.00k 2.26k
100pF
S1
Latch 1 3
GND GND Latch 2 4
7914G-1-000E
GND
Copyright © 2016, Texas Instruments Incorporated

Figure 4. CSA Schematic

The CSA circuit plays an important role in the eFuse system design. 90% of the design remains constant,
which can be scalable to multiple current sense values. Current limit value can be varied by two modes:
1. Shunt resistance
2. Current limit resistance
RS is the equivalent shunt resistance and ITRIP is the trip current to be set for eFuse. To calculate shunt
resistance and in turn help calculate common-mode voltage:
R1 ´ R 2
RS =
R1 + R 2 (1)
V CMTRIP = R S ´ I TRIP (2)
As per Figure 4, R18 and R19 are current limiting resistors for U1 and U2, respectively. Consider RX as
the current limiting resistor for the INA300-Q1. A constant current is flown into RX, which is a programmed
threshold limit.
V LIMIT = R X ´ I INA300 _ LIMIT (3)
VLIMIT is the programmed threshold limit set to the INA300-Q1. IINA300_LIMIT is the current flowing in the
INA300-Q1, which is 20 μA.

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3.1.1 Recommendations to Set Current Trip Value for eFuse

1. There are very few choices for RS shunt resistors. Finalize the RS shunt resistor for the appropriate
current with a given power dissipation and error budget. Calculate the VCM_TRIP value, which is the
common-mode voltage at which the INA300-Q1 has to trip.
2. There are quite good choices for RX resistors. Selecting the limit resistor depends on the delay time
configured for the INA300-Q1. The IINA300_LIMIT is the current flowing from pin 3 of the INA300-Q1 device,
which is typically 20 μAF.
V LIMIT
RX =
For 50- and 100-μs delay times: I INA300 _ LIMIT

RX =
(V LIMIT + NAF )
For a 10-μs delay time: I INA300 _ LIMIT

The standard resistor value for RX has to be chosen in such a way that the VLIMIT value is close to the
required VCM_TRIP (the common-mode trip value of the INA300-Q1).

3.1.2 Delay Time

The delay time of the INA300-Q1 is configurable. It can be mapped with the functions of the eFuse. Inrush
currents of the eFuse can be easily accommodated with the delay time configuration of the INA300-Q1. It
can be set to three different values with two configurable resistors:
• 10 μs: Unpopulate R16, R20, R17, and R21
• 50 μs: Populate only R20 and R21
• 100 μs: Populate only R16 and R17
The delay time of the eFuse has to be set with a proper load analysis. A low delay time gives a faster
response to any error conditions, but it will have less time for inrush currents. In other cases, if a high
response time has been set for inrush currents, the series path components must be able to withstand
during error conditions. Control unit loads with bulk capacitors must be set with an appropriate delay time
to accommodate inrush currents. Resistive or inductive loads that have fewer inrush currents can be set
with a low delay time.
Delay time is not required to be constant on both directions. In an eFuse circuit, delay times can be
selected based on the type of load. In Figure 4, if TP2 is connected to the battery and R8 is connected to
the load, U1 (INA300-Q1) supports for forward currents flowing from the source to the load, and U2
(INA300-Q1) works for reverse currents and kickback currents from inductive loads to source. There is a
scope to configure different trip currents and delay times for U1 and U2 circuits.

3.1.3 Alert
The alert pin of the INA300-Q1 is an output after the comparator. Based on latch pin configuration, the
alert pin responds to overload or short circuit errors. In transparent mode, the alert pin is pulled down only
when there is an overcurrent across the shunt resistors. If the load current falls, the alert output will be
cleared after the 10-μs configured delay time coupled with hysteresis set to its respective INA300-Q1.
Output voltage will be back to 3.3 V in a short time (based on the MOSFET capacitance and pullup
resistor). Take care when configuring such circuits; a delay when operating the control circuit may damage
the series path components.
If the Latch pin is pulled up to VCC, the alert pin will hold the error state of the comparator. Once there is
an overload or short circuit for the configured delay time, the alert pin will be pulled to low and stays in the
same state until powered off or reset (pull down the latch pin for at least 200 ms).

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3.1.4 Miscellaneous Functions

The CSA circuit can be configured appropriately based on the application. The enable pin can disable the
INA300-Q1 to reduce the quiescent current of the system. Pull up the enable pin to activate the internal
circuit of the INA300-Q1.
• Enable: Populate R5 and R10 for U1 and U2, respectively
Based on severity of the load, the load current monitoring circuit can be set to latch or transparent mode.
This function provides the signal handling circuit a scope to adjust the loading behavior and bring the
operating currents to a normal state without any interruptions. In this reference design, the latch pin is
interfaced to a switch, which can be used to reset the eFuse. In transparent mode, there is a chance of
high currents flowing in the circuit during SCG or overload conditions. Take care before opting for
transparent mode.
• Latch Pin: Populate R6 and R9 for U1 and U2 to be in LATCH mode. Press the switch to reset circuit
(only after clearing the error).

3.1.5 Error Calculation

Calculate circuit error before finalizing the components for current shunt and current limit resistors. To
better understand the design, the following is an example in error calculation and component selection is
shown for a 30-A current trip.
• R1 and R3: 6 mΩ ± 1%
• RS: 3 mΩ ± 1%
• R18 and R23 (RX): 4640 Ω ± 0.1% (close to required value with 0.1% tolerance)
• IINA300_LIMIT: 20 μA ± 0.75% (taken from the INA300-Q1 datasheet)
• VOFFSET_MAX: 650 μV (maximum offset voltage for a 10-μs delay)
• CMRRMIN: 100 dB (10 μV/V)

1. Define the current limit value using VLIMIT = RX × IINA300_LIMIT → VLIMIT = 0.0928 ± 0.85%.
2. Set the current limit value using ITRIP = VLIMIT / RS → ITRIP = 30.933 ± 1.85%. Therefore, the trip error
contributed by shunt and current limit resistors is ETRIP = 1.85%.
V OFFSET _ MAX  ´ 100 
E OFFSET = = 0.7%
3. Find the input offset voltage of the INA300-Q1 using .. V LIMIT  .
4. Find the CMRR error with the INA300-Q1 using

E CMRR =
( )
V CM - V CM _ SYS ´ CMRR MIN  ´ 100 
= 0.0652%
V LIMIT  .
(VCM = 12, VCM_SYS =18, CMRRMIN =10 μV/V )
5. Find the PSRR error with the INA300-Q1 using

E PSRR =
( )
V CM - V CM _ SYS ´ PSRR INA300  ´ 100 
= 0.0323%
V LIMIT  .
(VS = 3.3 V, VPS_SYS = 3.5 (max), PSRRINA300 = 150 μV/V )
Total error: ETRIP + EOFFSET + ECMRR + EPSRR → 2.64% (approximately)

NOTE: Filter components need to be populated based on the application. As the eFuse is close to
the battery, there is a small chance of a power supply ripple. To test with lab power supplies,
populate the filter circuit to obtain better accuracy; however, this action introduces error
because of input bias currents. For end designs, the INA300-Q1 can work accurately without
any filter components. So, errors with bias currents coupled with filter resistors are not
considered in error calculations.

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3.2 Switch and Control Circuit (SCC)

LDO_Supply_3
IPD90P04P4L-04 IPD90P04P4L-04
R2
Q1 DNP
10 Q2
TP1
4 3 3 4

R4

3
D2

1
Q3 10.0k
DFLZ10-7 D9
1
10V
TP3
10V

2
D4

R13 1N4148W-7-F R11

100k 10.0k

D5
DNP

3
1SMB5935BT3G
27V
Q4 1 Alert
BSS138

2
TP5

GND
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Figure 5. SCC Schematic

• Q1 and Q2 are P-channel MOSFETS, which are used for switch and reverse polarity functions.
• Q3 is used to switch and discharge the gate to source voltage of Q1 and Q2.
• Q4 is used to turn off the switch circuit by turning on Q3. Biasing components and input voltage play a
role for this operation.
• R4, R11, and R13 are used to bias the circuit during the startup and operation phases.
• D4 is used to protect Q3.
• D2 and D9 are used to protect Q1 and Q2, respectively. Only one component can be used from D2
and D9; it depends on component placements and routing options available on the board.
Case 1: Forward conduction mode
The drain of Q1 is connected to the battery source, whereas the drain of Q2 is for load side connection.
During normal operation, current flows through Power source → Q1 → Q2 → Series resistor → Load.
Q1 supports reverse polarity protection, whereas Q2 is used as a switch to turn off the load during
overcurrent conditions.
Case 2: Reverse conduction mode
The drain of the Q2 side is connected to the battery source, whereas the drain of Q1 is connected to load.
During normal operation, current flows through Power source → Series resistor → Q2 → Q1 → Load.
Q2 supports reverse polarity protection, whereas Q1 is used as a switch to turn off the load during
overcurrent conditions.

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3.2.1 Alert: High → Q4 is on

The alert pin is pulled to VCC3.3V by R12. During normal operation, when there is no error, the alert pin
always stays high. Internal operation (biasing and control) of the SCC is common for both forward and
reverse conduction modes.
• When the alert pin is pulled up, VCC3.3V is greater than VGS_TH of the BSS138, which turns on Q4.
• When Q4 is turned on, current flows through R4, R11, and Q4 based on voltage at VTP1
V TP1
I Q4 =
R 4 + R11 + R ON _ BSS138
• Voltage at VTP3 is important to operate Q1 and Q2. VTP3 mainly depends on the state of Q3 and VTP1
voltage.
• Voltage at the base of Q3 VB_Q3 depends on R11 and the state of Q4.
V
As Q4 is turned ON: .. B _ Q3 (
= I Q4 ´ R11 + R ON _ BSS138 )
• Voltage of VTP3 = VB_Q3 − VBE_Q3; this is valid until (VTP1 – VTP3) < VZ_D2 or VZ_D9.
VZ_D2 and VZ_D9 are the Zener breakdown voltages of D2 and D9, respectively.
• If VTP3 – VTP1 is < VGSth_Q1 and VGSth_Q2 (Q1 and Q2 are P-MOSFET), then both Q1 and Q2 will turn on,
which allows the eFuse to flow the current from the power source to the load.

3.2.2 Alert: Low → Q4 is off

The alert pin is pulled to ground by the INA300-Q1 (U1 or U2) when there is an overcurrent error. This
error will be latched or transparent based on the configuration of the INA300 (U1 or U2). Turning off the
operation (biasing and control) of the SCC is common for both forward and reverse conduction modes.
• When the alert pin is pulled down, voltage at the gate of Q4 is less than VGS_TH of the BSS138, which
leads to turning off Q4.
• When Q4 is turned off, leakage current flows through R4, R11, and Q4 based on voltage at VTP1.
• Voltage at VTP3 is important to operate Q1 and Q2. VTP3 mainly depends on the state of Q3 and VTP1
voltage.
• Voltage at the base of Q3 VB_Q3 depends on R14, ILEAK_Q4 off-state leakage current of the BSS138 (Q4),
and VTP1.
VB_Q3 = VTP1 – (ILEAK_Q4 × R4)
VB_Q3 is close to VTP1 as leakage current is very low.
• Voltage of VTP3 = VB_Q3 – VBE_Q3
VBE_Q3 is less than 0.7 V for Q3. So, (VTP3 – VTP1) > –1 V.
• As long as the alert pin is pulled to ground, VTP3 − VTP1 is always greater than VGSTH_Q1 and VGSTH_Q2
(gate-to-source threshold); as a result, both Q1 and Q2 will remain in an off state.

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3.2.3 Startup: (VBATT Rising from 0 to 10 V)

In forward conduction mode, voltage is applied at the drain of Q1 and the body diode of Q1 starts
conducting. Voltage at TP1 follows the battery voltage along with the drop of the body diode.
V TP1 = V BATT - V FD _ Q1 (4)
where:
• VBATT is battery voltage
• VFD_Q1 is forward voltage drop of Q1
VCC3.3V < VGSTH_Q4
Q4 (BSS138) is a small signal MOSFET that stays in an off state until VCC reaches the VGS_TH of the
BSS138, which is 1.3 V (typical). Section 3.2.2 explains the behavior of the circuit when Q4 is OFF.
VCC3.3V > VGSTH_Q4
When VCC is greater than VGSTH_Q4 (BSS138), Q4 turns on. When Q4 is turned on, circuit behavior is as
explained in Section 3.2.1. Voltage at the base of Q3 (VB_Q3) depends on the resistance of R4 and R11. In
this case, the voltage of VTP3 depends on VB_Q3 and the voltage drop of the base to the emitter in Q3.
æ R11 + R ON _ BSS138 ö
V B _ Q3 = ç V TP1 ´ ÷
ç R11 + R 4 + R ON _ BSS138 ÷
If Q4 is turned ON: .. è ø
Selecting R4, R11, and R13 plays an important role for startup behavior. If Q4 is off, VTP3 – VTP1 should be
greater (Q1 and Q2 are P-MOSFET) than VGSTH_Q1 and VGSTH_Q1 in operating voltages of eFuse. This
ensures the switches (Q1 and Q2) are turned off when Q4 is turned off as per the functionality of the
eFuse.
If there is no overload or short circuit fault on the load: VTP1 follows the battery voltage, whereas the load
does not see any voltage until Q4 is turned on. When Q4 is turned on, Q1 and Q2 turn on. Voltage at the
load depends on the selection of series path components Q1, Q2, and RS.

3.2.4 Operation: (Typical VBATT 13.5 V)

• In Figure 5, if the battery voltage is greater than 10 V, D2 and D9 protect Q1 and Q2, respectively,
from gate-to-source breakdown.
• If VTP1 – VTP3 is greater than 10 V, the result is limited to 10 V and VTP3 follows VTP1 with a constant
voltage drop. D4 is placed to protect Q3 from its maximum reverse breakdown voltage.
• Operation of the SCC follows the state of the alert pin. Response time of the switches upon activating
Q4 depends on the selection of components. R4, R11, Q1, Q2, and Q3 play a significant role for the
response time.
During normal operating conditions, the alert pin is pulled to VCC3.3V with R12 (10 kΩ). Q4 is turned on
when the load current is less than the trip current. If the alert pin is pulled down to low due to an overload
or short circuit, Q4 turns off, which effectively turns off Q1 and Q2. The turn-off response time of Q1 and
Q2 depends on R4 and the gate-to-source capacitance (CGS_Q1) of Q1 and Q2. The maximum delay time
of the IPD90P04P4L-04 is 140 ns.

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3.3 Power Supply and Protection

3.3.1 Power Supply

LDO_Supply_1 LDO_Supply_2

1
D6 VCC_3.3V

DB3X316N0L R24
TP6 VCC_3.3V 1.0k
3
LDO_Supply_3 8
VIN VOUT
1
TP7
GND 7

1
GND 6
C10 5 3 C11 C12 D7
NC GND
1µF 4 2 4.7µF 0.1µF Green
NC GND

2
U3

GND GND
Copyright © 2016, Texas Instruments Incorporated

Figure 6. LDO Power Supply Schematic

The LM9036 (U3), a wide VIN LDO, is used to generate VCC3.3V. In a bidirectional eFuse, the power
supply can be given from any side. D6 (schottky diode) is used to tap the signal from both directions and
to supply the board. To save cost, the input supply can also be tapped from TP1, and R2 can be
populated with low resistance and unpopulate D6. C10, C11, C12 are the bypass capacitors for the
LM9036.
The operating characteristics of the LM9036-Q1 include:
• 0 V < VIN < 2.5 V → VOUT = 0 V (max 0.5 V)
• 2.5 V < VIN < 3.3 V → VOUT = VIN – 0.1 V (max forward voltage drop)
• 3.3 V < VIN < 40 V → VOUT = 3.3 V (± 4%)

3.3.2 Protection
Automotive precision eFuse design can offer protection to ISO7637-2 power transients. Design also
supports Jump start, Cold cranking and Reverse polarity. As shown in Figure 18, D1 and D3 bidirectional
transient voltage suppression (TVS) 1.5SMC33CA-E3/57T is used to handle ISO7637-2 transients. D5 can
only be populated to suppress Positive transients. Based on the requirement of the system; selection of
D1, D3, and D5 can be decided.
Reverse Polarity protection can be achieved by SCC configuration. For any negative voltage gate to
source voltage of Q1 and Q3 are greater than threshold limit. Both the switches will stay in OFF state,
there will not be any conduction between source and load. Design of Internal circuits has to be taken care
for any influences during reverse polarity. See the test results specified in Figure 34.

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4 Getting Started: Design

The Automotive Precision eFuse TI Design can compete with typical fuses available in the market. It can
trip at specified currents in both directions. The design can be adapted easily to multiple current trip
values. As of now, the design can support eFuse applications for a 12-V battery architecture. This TI
Design can be easily portable to multichannel eFuse boxes. Selecting the series path components, current
limit components can be done based on the type of load and application.
As mentioned in Section 2, an eFuse box is a passive mechanical component in the cars. It interconnects
the battery connections to loads with a melting fuse. The fuse rating depends on the type of load and
application, and there can be relevant eFuse topologies based on these parameters. Top level loads for
batteries in an automotive environment are electronic control units, lamps, LEDs, relays, solenoids
(switching), and motors. For electronic control units, lamps and LEDs have little to no kickback energy
during their operation. A unidirectional eFuse with built-in reverse polarity protection works best for such
applications.

Battery Load

LM74610
t INA300
t

Uni-eFuse
other Uni-eFuse
Copyright © 2016, Texas Instruments Incorporated

Figure 7. Unidirectional eFuse

The LM74610 ORing controller provides reverse polarity protection. It works for zero quiescent current of
the module. The INA300-Q1 supports current sense and latch circuit. The uni-eFuse block can be
replicated for multiple loads. The number of uni-eFuse blocks connected in parallel depends on the
components selected for reverse polarity protection. The LM74610 turn on the MOSFET for 96% to 98%
of time; it turns off for 2% to 4% of its duty cycle based on the capacitor selected. During the off-time of
the LM74610, current flows through the body diode of the MOSFET. This leads to a dip in voltage based
on the type of transistor selected. These dips can be filtered in electronic control units. The ILIMIT, Enable,
and Latch pins of the INA300-Q1 can be interfaced with a microcontroller. Interfacing with the controller
increases the chances to improve diagnosis and system control. The quiescent current of a single channel
in a unidirectional eFuse is around 3.5 µA (disable INA300-Q1).
Bidirectional eFuse topology is the typical choice for inductive loads. Kickback energy can be easily
transferred to the battery based on the type of loads. Take care while designing the eFuse for high power
inductive loads. When the high power inductive load is turned off, energy stored in the inductor tries to
kickback to the battery. In such cases, selecting a relevant current limit and delay time avoids any
unnecessary trip of the circuits.

Battery Load

INA300
t
INA300
t
Copyright © 2016, Texas Instruments Incorporated

Figure 8. Bidirectional eFuse Block

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A bidirectional eFuse circuit provides more flexibility to operate inductive loads. It also trips for overcurrent
while operating in reverse conduction mode. The quiescent current of a bidirectional eFuse block module
is around 7 µA (disable INA300-Q1). An intelligent multichannel eFuse box can be built by integrating
unidirectional and bidirectional eFuses.

4.1 Multichannel eFuse Box

A multichannel eFuse box block diagram is shown in Figure 9. Appropriate selection of eFuse topologies
can be chosen based on type of loads. Mixture of unidirectional and bidirectional eFuses can bring more
value and reduce the overall costs of the system. The most important functions of eFuse are featured in
the following subsections.

Battery Control
Units...

INA300
LM74610 t
t
Lamps,
LEDS...

INA300

Motors..

Load1_Trip
Load2_Trip
INA300 INA300
Power Stage Loadx_Trip
t t t
Error
Reset
Micro
Solenoid..
controller Ilim1_Set
Ilim2_Set
Ilimy_Set
INA300 INA300
CAN
Transciever
Latch1 t t
Latch2
t Latchz

Copyright © 2016, Texas Instruments Incorporated

Figure 9. Multichannel eFuse Block Diagram

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4.1.1 Inrush Current

The inrush current of the system can be handled in two ways in the multichannel eFuse. It can be
changed by varying the current limit or delay time. Both methods have their own pros and cons in handling
the system.
When the system is woken up by Immo or KL15, the microcontroller enables the INA300-Q1. Current limit
resistors can be connected in a bridge configuration. Figure 10 shows an example configuration. The
R_lim2 value is chosen to be at a higher current limit to accommodate inrush currents. If the
microcontroller pulls the Inrush_Disable pin to high, then R_Lim1 will be parallel to R_Lim2, which reduces
the current limit for the INA300-Q1. The value of R_Lim1 and R_Lim2 must be set based on the
requirement of the system. The Inrush_Disable pin can be connected to multiple loads, so based on the
type of loads and applications, a set of eFuses can be allowed to have a higher current limit.
INA300_Limit

R_Lim1 R_Lim2

Inrush_Disable

Copyright © 2016,
Texas Instruments Incorporated

Figure 10. Current Limit Configuration → Inrush Current

Table 2. Current Limit Control for Inrush Currents

PARAMETER RESISTANCE COMMENT
Inrush_Disable → Low R_Lim2 High current limit, supports inrush current
Inrush_Disable → High R_Lim1 || R_Lim2 Actual load current limit

Inrush currents can also be handled with a delay time. Delay time configuration can change the runtime to
support Inrush currents. The INA300-Q1 has three options to set the delay time: 10 μs, 50 μs, and 100 μs.
This can be varied easily for two configurations (see Table 3). Figure 11 shows an example of changing
the delay time of the INA300-Q1. Multiple eFuse delays can be configured by using a single pin from the
microcontroller.
VCC3.3

Rz

INA300_Delay
Inrush_Delay

Copyright © 2016, Texas Instruments Incorporated

Figure 11. Delay Time Configuration → Inrush Current

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Table 3. Delay Control for Inrush Currents

PARAMETER DELAY SETTING COMMENT
100-µs delay time is activated, supports
Inrush_Delay → High INA300-Q1 delay pin pulled to VCC3.3
high inrush currents
10-µs delay time is activated, supports
Inrush_Disable → Low INA300-Q1 delay pin open
normal eFuse operation

Possible configurations to handle inrush currents are not limited as shown in this design guide. They can
be implemented with combinations of current limit and delay pins. These two pins offer many options to
handle inrush currents based on the application.
It is also possible to handle inrush currents in the INA300-Q1 without varying the current limit and delay
pins. The latch pins of the eFuse loads, which have a high inrush current, can be interfaced to the
controller. The type of connection to the controller can be defined based on available resources and
needs. The connections to the eFuse circuit must be there in such a way that by default, all latch pins
must be pulled up to VCC. The controller’s interface should allow the latch pin to pull it down for a short
duration. During the startup phase of the system, pull the selected latch pins of the INA300-Q1 low for a
predefined time to allow inrush currents.
When the system has settled or is within the predefined time, the controller can turn off the relevant circuit
to allow the efuses to latch for any overcurrent events.

4.1.2 Power Supply Transients

Due to multiple reasons, transients are observed in power supply lines. Inductive loads are one of the
main sources for the power supply transients. More details for the power supply transients are specified in
ISO7637-2. The impact power supply transients have on electronics varies based on the type source,
loads, and architecture. Most automotive manufacturers maintain their own internal specification for these
power supply transients.
In the current system architecture, fuses are used as an overcurrent blow (OCB) application. Normal fuses
do not support suppression of power supply transients. A multichannel eFuse system has a scope to
handle power transients better.

Battery Control
Units...
Transient
Suppression 1 INA300
LM74610 t
t
Lamps,
LEDS...

INA300
t

Motors..
Transient
Suppression x
INA300 INA300
t t

Solenoid..
Transient
Suppression x
INA300 INA300
t t

Copyright © 2016, Texas Instruments Incorporated

Figure 12. Transient Suppression Block Level

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Transient suppression 1 (shown in Figure 12) can act as a central suppression circuit, which can safe
guard most of the loads on a unidirectional eFuse. This can reduce or avoid the requirement of transient
suppression in most of the electronics working under a unidirectional eFuse system. Save system costs by
reducing the specification or avoiding individual transient suppressors in few loads.
Transient suppression x can be placed near inductive loads. Based on system requirements, transient
suppressors can be placed in the multichannel eFuse box system. Components must be selected and
placed appropriately to suppress the transients in bidirectional eFuse modules. Take care when handling
the layout and interconnections required in the system.

NOTE: The connections shown in Figure 12 is only for reference. The actual wiring and routing of
the system could be done to avoid or minimize the EMC interference in the system.

4.1.3 Diagnosis and Error Handling

The multichannel eFuse system offers much room for diagnosis and control of the loads and fuses. The
alert pin of the INA300-Q1 can be taken as a system error. Based on the available resources, a system
diagnosis can be further classified to find the exact root cause for error in the system. Based on the
priority defined for the given error, the controller can take an action (error handling algorithm).
For example, a trip error was recorded for headlamps and LEDs. By resetting the error, the application is
working fine. In such a case, only the trip error event is recorded and the system will be allowed to run
normally without any interruption to the user (or driver). Due to external conditions such as overload or
extreme temperatures, if the error repeats, the controller can check the influences that turn off the eFuse.
Upon retry, if the eFuse of the lamp does not successfully turn on the lamp, the controller can increase the
current limit by available methods and based on need (such as night time or low vision). If the lamp
successfully turns on, it could solve the need and increase the scope of the system’s functioning.
The parameters that led to failure can be logged. The controller and vehicle control systems can decide
the next steps based on the importance of the function. If the eFuse starts functioning fine after resetting
or by increasing the current limit, such instances can be noted, such as the frequency of resets, delta of
current limit, temperature, and so forth. If the eFuse trips even after the current limit increases, the error
will be logged and sent to other control units (BCU or cluster).
The flow chart that Figure 13 shows is an example of how to handle the errors in a multichannel eFuse
system.

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Previous process of
Error Handler

Is there any error ? Continue for next steps

No

Yes

Trip error logged

from Lamp

Log the System running

conditions(speed, load
current, voltage,
WHPSHUDWXUH«)

No Yes
Is there any extreme
external Influences ?
Check the log and look for Perform the necessary action
any internal influences(PCB for controllable extreme
WHPS«) conditions

Reset the eFuse of Lamp after

specified debounce time

No Does the error still Yes

exist?

Check the scope

Note the log and proceed for and vary the
further steps current limit

No Does the error still Yes

exist?

Note the log and reset the Glow MIL Lamp/Send

current limit to normal value the Error Message/
during next restart... Proceed for next steps

Figure 13. Flowchart of Error Handling in eFuse

The multichannel eFuse does not only improve the diagnosis of fuse box system. It can also handle errors
occurring in other parts of the system, which completely depends on system architecture.

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For example, in an automotive system a relay or load is connected to a battery with a fuse, and it is
controlled by a low-side switch in control units as shown in Figure 14.
Normal Fuse

Control Unit

Copyright © 2016, Texas Instruments Incorporated

Figure 14. Normal Fuse SCG

Due to vibrations or faulty conditions, if the low side of the load is short circuit to GND (SCG), the fuse will
not blow but the system will fail, which is not controllable by any electronics. These failures are be
diagnosed and reported as errors, and the system will halt to avoid any damage, which inconveniences
customers and increases service costs. To mitigate the risk, the system needs dual-side load control or
other architecture, which will increase system cost.

eFuse

Control Unit

Copyright © 2016, Texas Instruments Incorporated

Figure 15. eFuse With SCG

In a multichannel eFuse system, if the relay or load has SCG at the low side, then the eFuse circuit can
be turned off based on system demand (pre-configured for necessary eFuses). The eFuse can be used as
a high-side switch and keep the system in a running state to avoid a complete system breakdown. The
design of the subsystem can be handled at a low cost compared to other topology changes required for
the system.
By deploying various load control options and diagnoses, the multichannel eFuse system improves the
ASIL standards and safety in the automotive system.

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4.1.4 Operating Current

As mentioned in Section 2, the operating current of the load is very high compared to the fuse rating. The
fuse rating could be around 66% above the load current. This can be reduced to as low as 10% in the
multichannel eFuse design. By selecting a shunt resistor with a low TCR, there is very little variance of
resistance with respect to temperature. It will have an advantage of building an eFuse that has little impact
due to changes in temperature.
The following factors improve the operating current of the eFuse in the multichannel system:
• Selecting switching components with low losses is necessary to reduce the power dissipation of the
system, which also improves efficiency.
• Selecting a shunt resistor with low TCR offers a little variance in resistance for a change in ambient
and body temperatures.
• Designing the layout with a necessary heat sink allows the design to extract heat from the PCB and
series path components.

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5 Getting Started: Hardware

To get started with the TIDA-00795 board, prepare the setup with an emphasis on safety.
TIDA-00795 Board

Power Source Load

Copyright © 2016, Texas Instruments Incorporated

Figure 16. eFuse Setup

5.1 Setup Procedure and Precautions

1. Calculate the values of components for R1,R3 (shunt resistors) and R18, R23 for the desired current
limit.
2. Check the desired hysteresis to be set for U1,U2 (INA300) and populate the components R14, R19,
R15, and R22, accordingly.
3. Set the delay time of U1,U2 by the appropriate population of resistors R16, R20, R17, and R21.
4. Parameters such as current limit, hysteresis, and delay time can be chosen independently for U1 and
U2.
5. Take care while selecting the wires. The current-carrying capability of the wires must be above the
max current trip value set to U1 and U2. The ground line from the source to the load must always have
a direct connection. The ground line to the TIDA-00795 eFuse is only for biasing. Be careful when
wiring to avoid any damages to the TIDA-00795 eFuse boards.
6. Choose the power source and loads based on the type of tests planned on the TIDA-00795 eFuse.
7. If load or source does not have control switches to turn on or off the circuit, implement relevant
switches in a series path to the TIDA-00795 eFuse board.
8. Connect the oscilloscope to necessary test points for voltage measurements. Place the current probe
appropriately near to the source on either the positive or ground line.
9. Within the operating voltage range, set voltage in the power source. Based on the type of test, set the
current limit value in power source.
10. Set the mode appropriately in the load based on the load current and type of test.
11. Use the push button switch on the TIDA-00795 board to reset the eFuse. Do not press the push button
continuously when a load current is more than the current trip value as this could damage components
on the board and load.
12. The latch pin of U1 and U2 is accessible to control by other circuits through test pin TP8. Reset U1
and U2 by pulling low for at least 20 μs. The pulse generated from the signal generator or
microcontroller can be interfaced to latch pins through TP8.
13. Perform the necessary tests on the TIDA-00795 device. Take care with the setup and configuration
while performing short circuit tests.

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6 Test Setup
Initial tests of the automotive eFuse are done with the DC power supply and load. The eFuse is placed in
between the power supply and load for a positive connection. Ground connection from the load is directly
connected to the power source. For the eFuse internal components to function, a ground connection is
placed between the power supply and eFuse. Be careful to avoid the ground current flowing through the
PCB.
A lambda power supply has been chosen as the source. The current limit parameter in the source has
been set to the maximum. Voltage of the source and current limit on the load has been varied to get the
desired performance of eFuse. During the test, the current limit resistor (RX) has been changed to get the
performance details of the eFuse at different current trip values. DYNALOAD settings have been changed
manually to introduce constant current limit, short circuit, and different loading behaviors.

eFuse

Lamda Dynaload
DC : 0 V to 20 V 400 V, 120 A
0 A to 30 A 800 W

Copyright © 2016, Texas Instruments Incorporated

Figure 17. Test Setup

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7 Test Data
Tests are conducted on the eFuse to note the performance and its behavior during normal and overload
conditions. For better understanding, the test results are classified in the following subsections.

7.1 General Tests

7.1.1 Startup Behavior

Voltages at the source were increased in steps to closely monitor the behavior of circuit. Load is
configured as a 5-A constant current.

Table 4. Startup Behavior

TP1 (SOURCE Q1 TP2 (DRAIN OF TP3 (GATE OF Q1
SOURCE VCC 3.3 COMMENT
AND Q2) Q2) AND Q2)
1V 737.7 mV 0V 327 mV 0V Output OFF
1.5 V 1.231 V 0V 732.7 mV 67.59 mV Output OFF
2V 1.777 V 0V 1.309 V 254 mV Output OFF
2.5 V 2.21 V 0V 1.731V 398 mV Output OFF
2.78 V 2.78 V 2.762 V 123.7mV 2.527 V Output ON
4V 3.919 V 3.829 V 361.3 mV 3.29 V Output ON

The operating voltage of the LM9036 is 2.5 to 40 V. The LM9036 output stays low until the input voltage
reaches 2.5 V. When battery voltage is 2.75 V (0.25-V Schottky diode, 2.5-V LM9036), the LM9036 turns
on, which in turn supplies the internal circuit. Voltage at the VCC3.3V pin is above the threshold limits of
Q4. If Q4 is on as explained in Section 3.2.1, both series path MOSFETs Q1 and Q2 will turn on.
The operating voltage of (VMIN = 2.5 V) the LM9036 helps the eFuse to operate. When the LM9036 turns
on, the battery voltage is greater than 2.5 V. The gate-to-source voltage of Q1 and Q2 is greater than
2.2 V, which is greater than the max gate-to-source threshold voltage of Q1 and Q2. In a short time, Q1
and Q2 are driven to saturation mode. This process avoids high power dissipation in the ohmic region of
Q1 and Q2 along with load currents.
The minimum operating voltage of the INA300-Q1 is 2.7 V. Overcurrent limit protection is not activated
below the minimum supply voltage. Be sure to consider this parameter in the design. In the multichannel
eFuse system, the design of the power supply section must have relevant safety flags in place, which
ensure flawless operation of circuits.

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7.1.2 Run Behavior

.
Ch1: TP1 (Source of Q1 and Q2)
CH2: TP2 (Drain of Q2)
CH3: VCC3.3
CH4: TP3 (Gate of Q1 and Q2)
The load is configured in a 5-A constant current mode.

NOTE: Source is turned on and off

manually to check the behavior
of the circuit.

Figure 18. Run Behavior at 5 A

space

.
Ch1: TP1 (Source of Q1 and Q2)
CH2: TP2 (Drain of Q2)
CH3: Load current
CH4: TP3 (Gate of Q1 and Q2)
Configured trip current = 15.86 A
Load current = 15 A

NOTE: Startup behavior of the circuit

for a load current of 15 A, peak
input inrush current is 15.8 A.

Figure 19. Startup Behavior at 15 A

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.
Ch1: TP1 (Source of Q1 and Q2)
CH2: TP2 (Drain of Q2)
CH3: Load current
CH4: TP3 (Gate of Q1 and Q2)
Configured trip current = 31.6 A
Load current = 30 A

NOTE: Startup behavior of circuit for a

load current of 30 A, peak input
inrush current is 24 A.

Figure 20. Startup Behavior at 30 A

space

.
Ch1: TP1 (Source of Q1 and Q2)
CH2: TP2 (Drain of Q2)
CH3: Load current
CH4: TP3 (Gate of Q1 and Q2)

NOTE: eFuse behavior when the

source is turned off manually is
30 A.

Figure 21. Turned-off Behavior at 30 A

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7.1.3 eFuse Characteristics

Electrical parameters of the eFuse series path components are checked by maintaining a constant voltage
at the source and varying the load current. Table 5 shows the results:

Table 5. Reverse Polarity Protection

POWER
CURRENT (A) T1 INPUT (V) TP1 (V) TP2 (V) T2 OUTPUT (V)
DISSIPATION (W)
5 14.00 13.98 13.96 13.95 0.25
10 14.00 13.96 13.92 13.89 1.10
15 14.00 13.94 13.87 13.85 2.25
20 14.05 13.96 13.86 13.81 4.80
25 14.05 13.91 13.79 13.75 7.50
30 14.03 13.89 13.74 13.69 10.20

Figure 22 presents the data listed in Table 5.

14.01
Input Voltage
13.98 TP1
TP2
13.95 Output Voltage

13.92

13.89
Voltage (V)

13.86

13.83

13.8

13.77

13.74

13.71

13.68
0 3 6 9 12 15 18 21 24 27 30
Current (A) D001

Figure 22. Internal Behavior at Various Load Currents

eFuse design resistance = 4.3 mΩ (Q1) + 4.3 mΩ (Q2) + 1.5 mΩ (shunt resistor) = 10.1 mΩ ± tolerances
(design). The average eFuse resistance is 11.05 mΩ (measured).
There is a scope to reduce the series resistance by selecting appropriate components. This series
resistance can be changed based on application and accuracy requirements.

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7.2 Reliability Test

7.2.1 Reverse Polarity Test

Reverse polarity test was performed on the eFuse board. A positive connection of the power supply is
connected to J1 (Ground), and a negative connection of the power supply is connected to T1.
• T1 versus Ground: –14.21 V
• TP1 versus Ground: –0.096 V
• TP3 versus Ground: 0.023 V
• TP6 versus Ground: –4.5 V
• VCC3.3 versus Ground: –0.425 V
• Alert versus Ground: –0.377 V
Observations:
• No damage to components.
• LED stays in off state.
• Output connections are overloaded to cross check the circuit tolerance.
• Output connections are shorted, no change in circuit behavior.
• Circuit performance met expectations.
The design performance of the eFuse is tested in the operating voltage range of the eFuse:
• Reverse voltage = –20 V
• Positive voltage = 40 V
• Load current = 5 A
Based on theory and practical tests on the eFuse board, bidirectional eFuse characteristics are plotted in
Figure 23.
40
Input Voltage
35 eFuse Output Voltage

30

25

20

15
Voltage (V)

10

-5

-10

-15

-20
0 10 20 30 40 50 60 70 80
Time D002

Figure 23. eFuse Performance Characteristics

NOTE: System performance may change by varying source and loading conditions.

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7.2.2 Overload and Short Circuit Test

.
Ch1: TP1 (Source of Q1 and Q2)
CH2: TP2 (Drain of Q2)
CH3: Load current
CH4: TP3 (Gate of Q1 and Q2)
space
R18 and R23 = 1185 Ω ± 0.1%
Configured trip current = 15.86 A
Actual trip current = 15.87 A
Error = 0.063%

Figure 24. Trip Behavior at 15 A

space

.
Ch1: TP1 (Source of Q1 and Q2)
CH2: TP2 (Drain of Q2)
CH3: Load current
CH4: TP3 (Gate of Q1 and Q2)
space
R18 and R23 = 1185 Ω ± 0.1%
Configured trip current = 15.86 A

NOTE: Load short to ground during the

eFuse running state.
Delay time = 11.8 us

Figure 25. Runtime Short Behavior at 15 A

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.
Ch1: TP1 (Source of Q1 and Q2)
CH2: TP2 (Drain of Q2)
CH3: Load current
CH4: TP3 (Gate of Q1 and Q2)
space
R18 and R23 = 1580 Ω ± 0.1%
Configured trip current = 21.066 A
Actual trip current = 20.47 A
Error = 2.82%

Figure 26. Trip Behavior at 20 A

space

.
Ch1: TP1 (Source of Q1 and Q2)
CH2: TP2 (Drain of Q2)
CH3: Load current
CH4: TP3 (Gate of Q1 and Q2)
space
R18 and R23 = 1975 Ω ± 0.1%
Configured trip current = 25.53 A
Actual trip current = 25.2 A
Error = 1.07%

Figure 27. Trip Behavior at 25 A

30 Automotive Precision eFuse Reference Design TIDUBK1A – April 2016 – Revised May 2016
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.
Ch1: TP1 (Source of Q1 and Q2)
CH2: TP2 (Drain of Q2)
CH3: Load current
CH4: TP3 (Gate of Q1 and Q2)
space
R18 and R23 = 1975 Ω ± 0.1%
Configured trip current = 25.53 A

NOTE: Load is short to ground during

the eFuse running state.
Delay time ≤ 13.28 us

Figure 28. Runtime Short Behavior at 25 A

space

.
Ch1: TP1 (Source of Q1 and Q2)
CH2: TP2 (Drain of Q2)
CH3: Load current
CH4: TP3 (Gate of Q1 and Q2)
space
R18 and R23 = 2370 Ω ± 0.1%
Configured trip current = 31.61 A
Actual trip current = 31.72 A
Error = 0.33%

Figure 29. Trip Behavior at 30 A

TIDUBK1A – April 2016 – Revised May 2016 Automotive Precision eFuse Reference Design 31
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.
Ch1: TP1 (Source of Q1 and Q2)
CH2: TP2 (Drain of Q2)
CH3: Load current
CH4: TP3 (Gate of Q1 and Q2)
space
R18 and R23 = 2370 Ω ± 0.1%
Configured trip current = 31.6133 A

NOTE: Load is short to ground during

the eFuse running state.

Figure 30. Runtime Short Behavior at 30 A

space

.
Ch1: TP1 (Source of Q1 and Q2)
CH2: TP2 (Drain of Q2)
CH3: Load current
CH4: TP3 (Gate of Q1 and Q2)
space
R18 and R23 = 2370 Ω ± 0.1%
Configured trip current = 31.6133 A

NOTE: eFuse is turned on when load is

short to ground; behavior of the
eFuse is as expected.

Figure 31. eFuse Behavior at Load Short

32 Automotive Precision eFuse Reference Design TIDUBK1A – April 2016 – Revised May 2016
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.
Ch1: TP1 (Source of Q1 and Q2)
CH2: TP2 (Drain of Q2)
CH3: Load current
CH4: TP3 (Gate of Q1 and Q2)
space
R18 and R23 = 2370 Ω ± 0.1%
Configured trip current = 31.6133 A

NOTE: eFuse is turned on when load is

short to ground; behavior of the
eFuse is as expected. (Zoomed
picture)

Figure 32. eFuse Behavior at Load Short

space

.
Ch1: TP1 (Source of Q1 and Q2)
CH2: TP2 (Drain of Q2)
CH3: Load current
CH4: TP3 (Gate of Q1 and Q2)
space
R18 and R23 = 2370 Ω ± 0.1%
Configured trip current = 31.6133 A

NOTE: The eFuse load is short to

ground while there is no load
current; behavior of the eFuse is
as expected.

Figure 33. Runtime Short Behavior at No Load

TIDUBK1A – April 2016 – Revised May 2016 Automotive Precision eFuse Reference Design 33
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8 Design Files

8.1 Schematics
To download the schematics, see the design files at TIDA-00795.

LDO_Supply_3
IPD90P04P4L-04 IPD90P04P4L-04 R1
R2 0.006
Q1 DNP
10 Q2
T1 TP1 TP2 T2
4 3 3 4
LDO_Supply_1

LDO_Supply_2
CB35-36-CY C1 C3 VCC_3.3V VCC_3.3V C2 CB35-36-CY
D1 0.1µF R4 R3 C4 0.1µF

3
D2

1
Q3 10.0k VCC_3.3V 0.006 VCC_3.3V D3
0.1µF DFLZ10-7 D9 R5 R6 R7 R8 R9 R10 1.5SMC33CA-E3/57T
28.2V 1
10V 1.00k 0 0 1.00k 1.00k 0.1µF 28.2V
1.5SMC33CA-E3/57T TP3 1.00k
10V C5 C6
4 TP8 4

2
J1 C7 C8 C9 2.2µF 0.1µF VCC_3.3V

9
D4 0.1µF 2.2µF 6 Latch Latch 6
DNP
6095 2 100pF 2 GND R12 GND
GND R13 1N4148W-7-F R11 GND TP4 10k
V+ V+
100k 10.0k 5 1 1 5
VCC_3.3V VCC_3.3V
V- R14 R15 V-
Alert 10 10 Alert
1.00k 1.00k U2
D5
DNP U1 7 7 INA300DGS-Q1

3
1SMB5935BT3G R16 R17
INA300DGS-Q1
27V

8
Q4 1 Alert 3 1.00k 1.00k 3
BSS138

2
C13
TP5 R18 R19 R20 R21 R22 R23
2.26kDNP
1.00kDNP
1.00k DNP
1.00k DNP
1.00k 2.26k
GND 100pF
S1
Latch 1 3
GND GND Latch 2 4
7914G-1-000E
GND
BI Directional Switch with Protection BI Directional Current Sense and Activation

LDO_Supply_1 LDO_Supply_2
2

D6 VCC_3.3V VCC_3.3V

DB3X316N0L R24 R25

TP6 VCC_3.3V 1.0k 1.0k
3

LDO_Supply_3 8 VIN VOUT 1

TP7
7
GND
1

GND 6 1
C10 5 3 C11 C12 D7 D8
NC GND
1µF 4 2 4.7µF 0.1µF Green Red
NC GND
2

U3 Alert

GND GND

LDO Supply
Copyright © 2016, Texas Instruments Incorporated

Figure 34. Automotive Precision eFuse Schematic

space
space
space
space

34 Automotive Precision eFuse Reference Design TIDUBK1A – April 2016 – Revised May 2016
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8.2 Bill of Materials

To download the bill of materials (BOM), see the design files at TIDA-00795.

Table 6. BOM
PACKAGE
DESIGNATOR QTY VALUE DESCRIPTION PARTNUMBER MANUFACTURER
REFERENCE
!PCB1 1 Printed Circuit Board TIDA-00795 Any
C1, C2, C3, C12 4 0.1uF CAP, CERM, 0.1 µF, 100 V, +/- 10%, X7R 603 GRM188R72A104KA35J MuRata
C4 1 0.1uF CAP, CERM, 0.1 µF, 6.3 V, +/- 10%, X7R, 603 GRM188R70J104KA01D MuRata
C1005X5R1E225K050B
C5, C8 2 2.2uF CAP, CERM, 2.2 µF, 25 V, +/- 10%, X5 402 TDK
C
CAP, CERM, 0.1 µF, 16 V, +/- 10%, X7R, AEC- C0402C104K4RACAUT
C6, C7 2 0.1uF 402 Kemet
Q200 Grade 1, O
C10 1 1uF CAP, CERM, 1 µF, 50 V, +/- 10%, X7R 603 UMK107AB7105KA-T Taiyo Yuden
GRM188R61E475KE11
C11 1 4.7uF CAP, CERM, 4.7 µF, 25 V, +/- 10%, X5R, 603 MuRata
D
DO-214AB (no
D1, D3 2 28.2V Diode, TVS, Bi, 28.2 V, 1500 W, (no polarity) 1.5SMC33CA-E3/57T Vishay-Dale
polarity)
D2, D9 2 10V Diode, Zener, 10 V, 1 W PowerDI123 DFLZ10-7 Diodes Inc.
D4 1 100V Diode, Ultrafast, 100 V, 0.15 A SOD-123 1N4148W-7-F Diodes Inc.
D6 1 30V Diode, Schottky, 30 V, 0.1 A SOT-23 DB3X316N0L Panasonic
D7 1 Yellow/green LED, Yellow/green, SMD 0402 LED SML-P12MTT86 Rohm
D8 1 Red LED, Red, SMD 0.8x1.6mm HSMC-C190 Avago
Machine Screw, Round, #4-40 x 1/4, Nylon,
H1, H2, H3, H4 4 Screw NY PMS 440 0025 PH B&F Fastener Supply
Philips panhead
H5, H6, H7, H8 4 Standoff, Hex, 0.5"L #4-40 Nylon Standoff 1902C Keystone
J1 1 Standard Banana Jack, Uninsulated Keystone_6095 6095 Keystone
Thermal Transfer Printable Labels, 0.650" W x PCB Label 0.650"H x
LBL1 1 THT-14-423-10 Brady
0.200" H - 10,000 per roll 0.200"W
MOSFET, P-CH, -40 V, -90 A, AEC-Q101,
Q1, Q2 2 -40V DPAK IPD90P04P4L-04 Infineon Technologies
DPAK
Q3 1 45 V Transistor, NPN, 45 V, 0.5 A, SOT-23 SOT-23 BC817-16LT1G ON Semiconductor
Q4 1 50V MOSFET, N-CH, 50 V, 0.22 A, SOT-23 SOT-23 BSS138 Fairchild Semiconductor
R1, R3 2 0.003 RES, 0.003, 1%, 4 W, 3015 WIDE 3015 WIDE KRL7638-C-R003-F-T1 Susumu Co Ltd
RES, 40.0k, 1%, 0.125 W, AEC-Q200 Grade 0,
R4 1 40.0k 805 CRCW080540K0FKEA Vishay-Dale
0805
R5, R6, R9, R10 4 1.00k RES, 1.00 k, 1%, 0.1 W, 0402 402 ERJ-2RKF1001X Panasonic
R7, R8 2 0 RES, 0, 5%, 0.063 W, 0402 402 CRCW04020000Z0ED Vishay-Dale
R11 1 10.0k RES, 10.0 k, 1%, 0.125 W, 0805 805 CRCW080510K0FKEA Vishay-Dale

TIDUBK1A – April 2016 – Revised May 2016 Automotive Precision eFuse Reference Design 35
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Table 6. BOM (continued)

PACKAGE
DESIGNATOR QTY VALUE DESCRIPTION PARTNUMBER MANUFACTURER
REFERENCE
R12 1 10k RES, 10 k, 5%, 0.1 W, 0603 603 RC0603JR-0710KL Yageo America
R13 1 100k RES, 100 k, 1%, 0.125 W, 0805 805 CRCW0805100KFKEA Vishay-Dale
R14, R15, R16, R17 4 1.00k RES, 1.00 k, 1%, 0.1 W, 0603 603 CRCW06031K00FKEA Vishay-Dale
R18, R23 2 2.26k RES SMD 1.18KOHM 0.1% 1/10W, 0603 603 ERA-3AEB1181V Panasonic
R24, R25 2 1.0k RES, 1.0 k, 5%, 0.063 W, 0402 402 CRCW04021K00JNED Vishay-Dale
S1 1 Switch, Tactile, SPST-NO, 0.1A, 16V, SMT 4.93x4.19x6.2 mm 7914G-1-000E Bourns
T1, T2 2 50A Terminal 50A Lug CB35-36-CY CB35-36-CY Panduit
Red Miniature
TP1, TP2, TP6, TP7 4 Red Test Point, Miniature, Red, TH 5000 Keystone
Testpoint
Yellow Miniature
TP3, TP4 2 Yellow Test Point, Miniature, Yellow, TH 5004 Keystone
Testpoint
Black Compact
TP5 1 Black Test Point, Compact, Black, TH 5006 Keystone
Testpoint
High or Low Side, Bi-Directional Zerø-Drift
U1, U2 2 Series CURRENT SENSE COMPARATOR, DSQ0010A INA300AIDSQR Texas Instruments
DSQ0010A
Ultra-Low Quiescent Current Voltage Regulator,
U3 1 D0008A LM9036QMX-3.3/NOPB Texas Instruments
D0008A

36 Automotive Precision eFuse Reference Design TIDUBK1A – April 2016 – Revised May 2016
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8.3 PCB Layout Recommendations

The PCB layout has to be done with appropriate measures to ensure the smooth operation of eFuse
functionality.
• Check the series path tracks for power dissipation, and set the layer thickness and area appropriately.
• Place vias appropriately to share the current on both sides of PCB.
• Place D1 and D3 very close to the connector.
• Place D2 and D9 close to Q1 and Q2 as shown in Figure 35:

Figure 35. Positioning of Power MOSFETs

• Place decoupling capacitors near to ICs.

• Always ensure that the shunt resistor is Kelvin-connected to U1 and U2.

Figure 36. Kelvin Connections for Tapping Current Sense

• Keep shunt measurement traces as short as possible.

• Balance shunt measurement traces as much as possible.
• Place the current sensing device and shunt on the same side of the PCB.
• For U1 and U2, check the placement guidelines for the INA300. Place the R18 and R23 current sense
resistors at U1 and U2. The ground connection from R18 and R23 should have less resistance to the
ground connection of U1 and U2.

TIDUBK1A – April 2016 – Revised May 2016 Automotive Precision eFuse Reference Design 37
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Figure 37. Placement of INA300-Q1

8.3.1 Layout Prints

To download the layer plots, see the design files at TIDA-00795.

Figure 38. Top Overlay Figure 39. Top Solder Mask

38 Automotive Precision eFuse Reference Design TIDUBK1A – April 2016 – Revised May 2016
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Figure 40. Top Layer Figure 41. Bottom Layer

Figure 42. Bottom Solder Mask Figure 43. Bottom Overlay

Figure 44. Mechanical Dimensions

8.4 Altium Project

To download the Altium project files, see the design files at TIDA-00795.

TIDUBK1A – April 2016 – Revised May 2016 Automotive Precision eFuse Reference Design 39
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8.5 Gerber Files

To download the Gerber files, see the design files at TIDA-00795.

Figure 45. Fabrication Drawing

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8.6 Assembly Drawings

To download the assembly drawings, see the design files at TIDA-00795.

Figure 46. Top Assembly Drawing Figure 47. Bottom Assembly Drawing

9 References
1. Texas Instruments, Introduction to optimized over-current detector INA300, Video (Link)
2. Texas Instruments, Current Shunt Monitors, Brochure (SLYB194)

10 About the Author

RAMA KAMBHAM (Rama Chandra Reddy) is an automotive system engineer working in Texas
Instruments Deutschland. Rama brings to this role his extensive experience in Battery Management
Systems and Engine Management Systems in the automotive domain. Rama earned his bachelor of
engineering degree from Osmania University Hyderabad, India.

TIDUBK1A – April 2016 – Revised May 2016 Automotive Precision eFuse Reference Design 41
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Revision A History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.

Changes from Original (April 2016) to A Revision .......................................................................................................... Page

• Changed from preview page ............................................................................................................. 1

42 Revision History TIDUBK1A – April 2016 – Revised May 2016

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