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Lab 1

This document describes a lab experiment to analyze the output and transfer characteristics of an n-channel MOSFET. The lab procedures involve connecting an n-channel MOSFET in a common-source configuration and measuring its drain current (ID) under varying drain-source voltage (VDS) and gate-source voltage (VGS) conditions. Graphs of drain characteristics (VDS vs ID) and transfer characteristics (VGS vs ID) will be plotted from the experimental data to determine threshold voltage (VT), transconductance (gm), and output resistance (ro).

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Muhammad Tehreem
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Download as PDF, TXT or read online on Scribd
115 views

Lab 1

This document describes a lab experiment to analyze the output and transfer characteristics of an n-channel MOSFET. The lab procedures involve connecting an n-channel MOSFET in a common-source configuration and measuring its drain current (ID) under varying drain-source voltage (VDS) and gate-source voltage (VGS) conditions. Graphs of drain characteristics (VDS vs ID) and transfer characteristics (VGS vs ID) will be plotted from the experimental data to determine threshold voltage (VT), transconductance (gm), and output resistance (ro).

Uploaded by

Muhammad Tehreem
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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Lab – 1

N-CHANNEL MOSFET OUTPUT AND TRANSFER CHARACTERISTICS


OBJECTIVE:
To study transfer and output characteristics of an n-channel Metal Oxide Semiconductor field
effect Transistor (MOSFET) in Common-source configuration.

APPARATUS:

 MOSFET (IRFZ44)
 Bread board
 Resistor (1KΩ, 100KΩ)
 Connecting wires
 DC power supply (0 – 30V)
 Multimeter

CIRCUIT DIAGRAM:
THEORY:

The MOSFET is a four-terminal device, whose substrate, or body terminal must be always held at
one of the extreme voltages in the circuit, either the most positive for the PMOS or the most
negative for the NMOS. One unique property of the MOSFET is that the gate draws no measurable
current.

1. Explain the constructional details of n –channel E-MOSFET


2. Explain the working of n –channel E-MOSFET.
3. Mention various types of MOSFET and applications of MOSFET.

PROCEDURE:

OUTPUT/DRAIN CHARACTERISTICS:
1. Connect the circuit as per given diagram properly.
2. Keep VGS constant at some value say 1.1 V by varying VGG
3. Vary VDS in step of 1V up to 10 volts and measure the drain current ID. Tabulate all the
readings.
4. Repeat the above procedure for VGS as 1.2V, 1.3V, 1.4V, 1.5V etc.
TRANSFER CHARACTERISTICS:
1. Connect the circuit as per given diagram properly.
2. Set the voltage VDS constant at 10 V.
3. Vary VGS by varying VGG in the step of 0.1 up to 1.55V and note down value of drain current
ID. Tabulate all the readings.
4. Plot the output characteristics VDS vs ID and transfer characteristics VGS vs ID.
5. Calculate VT, gm, rd or ro from the graphs and verify it from the data sheet.

OBSERVATION TABLE:

OUTPUT / DRAIN CHARACTERISTICS:

VGS = 1.1 V VGS = 1.2 V VGS = 1.3 V VGS = 1.4 V VGS = 1.5 V
VDS ID VDS ID VDS ID VDS ID VDS ID
(V) (mA) (V) (mA) (V) (mA) (V) (mA) (V) (mA)
1 1 1 1 1
2 2 2 2 2
3 3 3 3 3
4 4 4 4 4
5 5 5 5 5
6 6 6 6 6
7 7 7 7 7
8 8 8 8 8
9 9 9 9 9
10 10 10 10 10

TRANSFER CHARACTERISTICS

VDS = 10V
VGS (V) ID (mA)
0
0.2
0.4
0.6
0.8
1
1.1
1.2
1.3
1.4
1.5
CALCULATION:

1. Threshold voltage VT: Gate to source voltage at which, drain current starts flowing.

2. Transconductance gm: Ratio of small change in drain current (Δ ID) to the corresponding
change in gate to source voltage (ΔVGS) for a constant VDS.

gm = Δ ID / ΔVGS at constant VDS

3. Output drain resistance: It is given by the relation of small change in drain to source
voltage (Δ VDS) to the corresponding change in Drain Current (Δ I D) for a constant VGS.

rd or ro = ΔVDS / Δ ID at a constant VGS

RESULTS:
1. VT: ________
2. gm: ________
3. ro: ________

CONCLUSION:

POST LAB QUESTIONS:

1. What are the advantages of MOSFET over JFET?


2. To turn NMOS –E, how much voltage is required?
3. Why an input characteristic of MOSFET is not drawn?
4. Simulate Transfer Characteristic and Drain Characteristic of the circuit you have
implemented above.

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