YC1166

Bluetooth 5.0 BR/EDR/BLE

Datasheet

Yichip Microelectronics
©2014

Yichip Microelectronics
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 YC1166—Bluetooth SOC 5.0 BR/EDR/BLE

Revision History
Version Date Author Description
preliminary 2020-02-26 Rake Initial version

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General Description

The YC1166 is a very low power, high performance and highly integrated Bluetooth 5.0 BR/EDR/BLE
solution with Audio Codec, designed for operation over the 2400MHz to 2483.5Mhz ISM frequency band.
YC1166 is manufactured using advanced 55nm CMOS low leakage process, which offers highest integration,
lowest power consumption, lowest leakage current and reduced BOM cost while simplifying the overall system
design. Rich peripherals including an 8-channel general purpose ADC, power-on-reset (POR), Arithmetic
Accelerators, 3axis Q-decoder, ISO7816, UART/SPI/I2C and 8 GPIOs, which further reduce overall system cost
and size.
YC1166 operates with a power supply range from 1.8 to 5.5V and has very low power consumption in both
Tx and Rx modes, enabling long lifetimes in battery-operated systems while maintaining excellent RF
performance. The device can enter an ultra-low power sleep mode in which the registers and retention memory
content are retained while low power Oscillator and sleep timer is ON.

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 YC1166—Bluetooth SOC 5.0 BR/EDR/BLE

 Oscillators
Key Features
 16M/24M/32M XTAL supported (default
 Bluetooth 5.0 BR/EDR/BLE Proprietary 24M)
double-mode RF SOC  40M RC oscillator
 Very Low Power Consumption  Low Jitter 20K RC oscillator
 10nA shut down mode (external interrupts)  Dual Core Digital Architecture
 800nA sleep mode (32kHz RC OSC, sleep  ARM Cortex-M0 Core for application
timer and register ON)  DataRAM 16kB+Cache 16kB
 2.1uA retention mode (32kHz RC OSC, sleep  CPU clock speed 48Mhz
timer, 2k retention memory and register ON)  32bit-Risc Core for link management
 Rx peak current w/o DCDC  80kB code ROM and 64Kbit OTP
 16mA in BLE/2.4G mode  8kB patch RAM and 8kB dataRAM
 17mA in EDR mode  All RAMs can be set to retention mode
 Tx peak current w/o DCDC @ -2dBm  Arithmetic Accelerators [Accuracy : (sign, 15b.16b)]
 22mA in BLE/2.4G mode  sin/cos/tan/sin-1/cos-1/tan-1/ multi/div/sqrt
 23mA in EDR mode  Analog Peripherals
 Rx peak current with DCDC  8 channel ADC with 10 bit accuracy/3Msps
 6.75mA in BLE/2.4G mode  Digital Peripherals
 7.25mA in EDR mode  Two-wire Master (I2C compatible), upto
 Tx peak current with DCDC @ -2dBm 400kbps; UART(RTS/CTS) with HCI-H5
 16.5mA in BLE/2.4G mode protocol, upto 3.25Mbps; SPI Master, upto
 17mA in EDR mode 24Mbps and internal QSPI connected 4Mbit
 <25uA avg, 500ms sniff hold connection Flash
 2.4GHz Transceiver  ISO7816
 Single-end RFIO  AES256 HW encryption
 -95dBm in BLE mode  LED drive capability
 support 250kbps, 1/2/3Mbps data rates  PWM
 Tx Power upto +9dBm  20x8 key scan
 Audio Function  3 axis Q-decoder
 Mic PGA 0-18dB,3dB per step  USB2.0 fullspeed,4Eps
 16-bits ADC
 2x16Bit DAC, Stereo
 Audio SNR: ADC 88dB; DAC 92dB

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 YC1166—Bluetooth SOC 5.0 BR/EDR/BLE

Block Diagram

32bit Customized Risc HVLDO RC RC

XTAL 40M 20K
Charger
12/24/26/32M
LDO LDO LDO
CORE SYS Ret RF POReset

ICE Trace buffer

Risc_CodeRAM Risc_DataRAM
8kB 8kB BT4.2/5.0 CORE
BB
Regs
Memory Controller

RF
M0_CodeRAM Risc_DataRAM
16kB 4kB Transceiver

BT3.0 CORE
OTP M0_DataRAM
BB
8kB 16kB RF
Regs
Regs

Arithmetic
Risc_ROM
Accelerators
80kB (sin/cos/tan/arcsin/
arccos/arctan)
Audio Codec
DMA DMA DMA

ARM Cortex-M0 Digital

3-axis Qdecoder
Cache 16kB ADC

SBC Codec
Filters
Controller
Keyboard

ISO7816
Wake-up

PWM0

USB2.0
UART

SPI x2
Timer

PCM
I2C
Power
Clock SW AGC
CORE Managem Timer
ent Data&C Stereo
PWM1 ontrols DAC
ICE Trace buffer GPIO Muxing

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 YC1166—Bluetooth SOC 5.0 BR/EDR/BLE

Electrical Specifications
Name Parameter (Condition) Min Typ Max Unit Comment
Power Supplies
HVIN Voltage Input, typically 1uF decouple cap 3.1 4.2 5.5 V
Voltage Output, typically 1uF decouple cap, (1)
HVOUT 3.1 3.3 3.4 V
maximum 50mA load capability
CHARGE_V
Voltage Input, typically 4.7uF decouple cap 4.8 5 5.5 V
AD
CHARGE_V
Voltage Input, typically 4.7uF decouple cap 4.0 4.2 4.6 V
BAT
IQ_HV Quiescent Current of high voltage LDO 750 nA
VIN Voltage Input, typically 1uF decouple cap 1.5 3.6 V
VINPA Voltage Input, typically 5pF decouple cap 1.5 3.6 V (2)
VINLPM Voltage Input 1.8 3.6 V (3)
VIO Voltage Input 1.7 3.6 V (4)
DVDD Voltage Output, typically 1uF decouple cap 1.1 1.2 1.3 V
VDDLPM Voltage Output, typically 100nF decouple cap 1.1 1.2 1.3 V
Temperature
TEMP Temperature -20 +85 ℃
Digital Input Pin
VIH High Level VIO-0.3 VIO+0.3 V
VIL Low Level VSS VSS+0.3 V
Digital Onput Pin
VOH High Level VIO-0.3 VIO+0.3 V
(5)
VOL Low Level VSS VSS+0.3 V
Current Consumption
Shut down mode, can only be waked up by
IVDD 10 nA
wake-up pin.
Retention mode (LPO, no retention RAM,
IVDD POR, sleep timer, I/O interrupts ON), can be 0.8 uA
waked up by sleep timer & any GPIO
(6)
Retention mode (LPO, 2kB retention RAM,
IVDD POR, sleep timer, I/O interrupts ON), can be 2.1 uA
waked up by sleep timer & any GPIO
RX mode, BLE & 2.4G mode, 100% ON
IVDD 16 mA
(w/o DCDC)
(7)
RX mode, EDR mode, 100% ON (w/o
IVDD 17 mA
DCDC)
TX mode, BLE & 2.4G mode, 100% ON (w/o
IVDD 22 mA
DCDC) (8)
IVDD TX mode, EDR mode, 100% ON (w/o 23 mA

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DCDC)
RX mode, BLE & 2.4G mode, 100% ON
IVDD 6.75 mA
(with ideal DCDC @3V)
(7)
RX mode, EDR mode, 100% ON (with ideal
IVDD 7.25 mA
DCDC @3V)
TX mode, BLE & 2.4G mode, 100% ON
IVDD 16.5 mA
(with ideal DCDC @3V)
(8)
TX mode, EDR mode, 100% ON (with ideal
IVDD 17 mA
DCDC @3V)
Average Current, 500ms sniff, hold
IVDD 25 uA
connection
Normal RF Condition
FOP Operating Frequency 2400 2480 MHz
FXTAL Crystal Frequency 12 24 32 (9)
Transmitter Characteristics
PRF RF output power -20 0 9 dBm
kHz/50
CD Carrier Drift Rate 5
us
PRF1 Out of band emission 2 MHz (GFSK) -40 dBm
PRF2 Out of band emission 3 MHz (GFSK) -48 dBm
BW 20dB bandwidth 0.9 MHz
Modulation Accuracy, RMS DEVM ( π /4
7 20 %
DQPSK)
Modulation Accuracy, RMS DEVM (8PSK) 7 13 %
Modulation Accuracy, 99% DEVM ( π /4 %
14 30
EVM DQPSK)
Modulation Accuracy, 99% DEVM (8PSK) 14 20 %
Modulation Accuracy, Peak DEVM ( π /4 %
18 35
DQPSK & 8PSK)
Modulation Accuracy, Peak DEVM (8PSK) 18 25 %
Out of band emission 2 MHz (π/4 DQPSK
PRF1 -30 -20
& 8PSK)
Out of band emission 3 MHz (π/4 DQPSK
PRF2 -42 -40
& 8PSK)
Receiver Characteristics
BLE
SEN High Gain mode, Sensitivity @0.1% -95 dBm
SEN Standard Gain mode, Sensitivity @0.1% -92 dBm
MaxIn Maximum Input Power 0 dBm
C/ICO Co-channel C/I, Basic Rate, GFSK 7 dB
C/I1ST ACS C/I 1MHz, Basic Rate, GFSK 5.5 7 dB
C/I2ND ACS C/I 2MHz, Basic Rate, GFSK -36 -34 dB
C/I3RD ACS C/I 3MHz, Basic Rate, GFSK -43 dB

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C/I1STI ACS C/I Image channel, Basic Rate, GFSK -34 dB

C/I 1 MHz adjacent to image channel, Basic
C/I2NDI -28 dB
Rate, GFSK
BR & EDR
SEN Basic Rate, GFSK, BER<0.1%, Dirty Tx on -92 dBm
EDR, π/4 DQPSK, BER<0.01%, Dirty Tx
SEN -93 dBm
on
SEN EDR, 8PSK, BER<0.01%, Dirty Tx on -83 dBm
MaxIn Maximum Input Power 0 dBm
C/ICO Co-channel C/I, EDR, π/4 DQPSK 10.5 dB
C/I1ST ACS C/I 1MHz, EDR, π/4 DQPSK -8 dB
C/I2ND ACS C/I 2MHz, EDR, π/4 DQPSK dB
C/I3RD ACS C/I 3MHz, EDR, π/4 DQPSK -54 dB
C/I1STI ACS C/I Image channel, EDR, π/4 DQPSK -27 dB
C/I 1 MHz adjacent to image channel, EDR,
C/I2NDI -43 dB
π/4 DQPSK
C/ICO Co-channel C/I, EDR, 8PSK 20 dB
C/I1ST ACS C/I 1MHz, EDR, 8PSK 0 dB
C/I2ND ACS C/I 2MHz, EDR, 8PSK -20 dB
C/I3RD ACS C/I 3MHz, EDR, 8PSK -45 dB
C/I1STI ACS C/I Image channel, EDR, 8PSK -18 dB
C/I 1 MHz adjacent to image channel, EDR,
C/I2NDI -33 dB
8PSK
(1) HVIN & HVOUT are input & output of a high voltage LDO which is integrated in YC1166, input voltage
range from 3.1~5.5V, and maximum load capability upto 50mA. Typically used in Li_BAT (3.2~4.2V) or
USB_Power(4.5~5.5V) applications. If input voltage is lower than 3.6V, HVIN & HVOUT should be left
unconnected and YC1166 should be powered by VIN/VINLPM/VINPA directly.
(2) If RF output power should be larger than -4dBm, VINPA should be larger than 2.5V.
(3) VINLPM should always be powered ON in all working cycles.
(4) VIO should always be powered ON in all working cycles.
(5) Drive capability of GPIO[20:30] is up to 100mA, other GPIO’s drive capability is 10mA
(6) By default, 2kB retention memory is ON in retention mode. Up to 4kB retentionable X_memory available at
the cost of extra 600nA retention mode current. Besides, 16kB 51-code memory is also retentionable at the
cost of extra 1.6uA retention mode current.
(7) Result based on standard gain mode
(8) Result based on -2dBm Pout
(9) 16M, 24M, 26M, 32M crystal supported, 24M by default

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Crystal Oscilator
The crystal oscillator requires a crystal with an accuracy of ±30 ppm as defined by the Bluetooth
specification. Two external load capacitors in the range of 5 pF to 30 pF are required to work with the crystal
oscillator. The selection of the load capacitors is crystal dependent. The recommended crystal specification shows
below.

Recommended Oscillator Configuration — 20 pF Load Crystal

Reference Crystal Electrical Specifications

Parameter
Name Min Typ Max Unit Comment
(Condition)
Frequency 24 MHz
Oscillation mode Fundamental
Frequency tolerance @25°C ±10 ±30 ppm
Tolerance stability over temp @0°C to +70°C ±10 ±30 ppm
Load capacitance 20 pF
Operating temperature range -20 +70 degree
Drive Level 100 uW

Audio DAC

Parameter Min Typ Max Unit Test condition

Frequency Response 20 20k Hz

Dynamic Range 90 dB
1kHz & 10kohm loading
SNR 92 dB
With A-Weighted Filter
THD+N -75 dB
Output Swing 1 Vrms
DAC Output Power 12 mV 32ohm loading

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Audio ADC

Parameter Min Typ Max Unit Test condition

Dynamic Range 86 dB
1kHz & 10kohm loading
SNR 88 dB
With A-Weighted filter
THD+N -75 dB

Power consumption
Parameter Average Current Unit
W/O DC-DC

Sleep / 800 nA
Sniff 500ms interval 22 uA
ADV interval: 640ms
Discoverable Scan interval: 1280ms 139 uA
Scan window: 11.25ms

With DC-DC Parameter Average Current Unit

Sleep / 800 nA
Sniff Sniff Interval:500ms 18 uA
ADV interval: 640ms
Discoverable Scan interval: 1280ms 90 uA
Scan window: 11.25ms

Bluetooth Security
1. Pairing
 Pin Code

2. Security Simple Pairing

 Just Work(No input)
 Keyboard
 DisplayYesNo

MFi
Support Apple’s MFi authentication and iAP1/iAP2 protocols.

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Bluetooth Stack

1. Serial Port Profile

2. Generic Attribute Profile

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Application Schematic
The headset application

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Package Information

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sop16 Pin Name Type Function Description

1 XTALOUT Ana_O XTAL port.

2 XTALIN Ana_I XTAL port, or external CLK in.

3 VSS
GND GND

4 RFIO RF Port ANT port.

HV LDO output, 3.3V. Bypass cap need here, 1uF. Max output
5 HVOUT
Power_O current, [email protected].
6 DVDD Power_O Internal LDO output, 1.2V. Need an external bypass cap here, 0. 1uF.
7 GPIO0 Dig_IO Pls check "sheet: GPIO_Muxing"
OTP Program Power, 6.5V./HVLDO input, 3.5~5.5V, 4.7uF bypass
8 VPP/HVIN
Power_I cap.
9 GPIO23 Dig_IO Pls check "sheet: GPIO_Muxing"

10 GPIO24 Dig_IO Pls check "sheet: GPIO_Muxing"

11 MIC_INP Ana_I ADC positive input.

12 MIC_BIAS Ana_O Power output for mic.
13 GPIO23 Dig_IO Pls check "sheet: GPIO_Muxing"

14 GPIO24 Dig_IO Pls check "sheet: GPIO_Muxing"

15 GPIO25 Dig_IO Pls check "sheet: GPIO_Muxing"

16 GPIO31/ICE Dig_IO Pls check "sheet: GPIO_Muxing"/Debug port, Tx & Rx.

30 HPOUTRP Ana_O DAC right channel positive output.

31 HPOUTRN Ana_O DAC right channel negative output.

32 HPVDD Power_O Need an external bypass cap here, 0.1uF.

Note: Most GPIOs are by default configured to input status after power-on reset, except for GPIO2 &
GPIO24/25/26 (if applicable) which are in output status. If a GPIO is not used as well as it is not configured to
output, it can be connected to GND. But GPIO2 & GPIO24/25/26 MUST NOT be connect to GND at any time.

PWM, UART, SPI and other digital peripherals can be flexibly configured to any GPIO port。

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GPIO Muxing Table

GPIOs Function1 Function2
GPIO[0]
GPIO[1] SPI-NCS
GPIO[2] SPI-IO1
GPIO[3] SPI-IO2
GPIO[4]
GPIO[5]
GPIO[6]
GPIO[7]
GPIO[8]
GPIO[9] SPI-IO3
GPIO[10] SPI-SCK
GPIO[11] SPI-IO0
GPIO[12]
GPIO[13]
GPIO[14]
GPIO[15]
GPIO[16]
GPIO[17] adc_channel1
GPIO[18] adc_channel2
GPIO[19]
GPIO[20] adc_channel3
GPIO[21] SDA adc_channel4
GPIO[22] SCL adc_channel5
GPIO[23] adc_channel6
GPIO[24] adc_channel7
GPIO[25] adc_channel8
GPIO[26]
GPIO[27] wakeup
GPIO[28] wakeup
GPIO[29]
GPIO[30]

Note: Drive capability of GPIO[20:30] is up to 100mA, other GPIO’s drive capability is 10mA;Micbias output
1.5-2.8V@3mA.

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Package Physical Dimension

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