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NTE109

The document describes the NTE109 fast switching general purpose diode. It is optimized for radio frequency applications and can replace point contact diodes. It has applications in AM/FM detectors, radio detectors, FM discriminators, TV auto detectors, and RF input probes. Features include lower leakage current, flat junction capacitance, high mechanical strength, and a mean time between failures of at least 1 million hours. It provides specifications for maximum ratings and typical electrical characteristics.

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Jesus Audiel
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42 views1 page

NTE109

The document describes the NTE109 fast switching general purpose diode. It is optimized for radio frequency applications and can replace point contact diodes. It has applications in AM/FM detectors, radio detectors, FM discriminators, TV auto detectors, and RF input probes. Features include lower leakage current, flat junction capacitance, high mechanical strength, and a mean time between failures of at least 1 million hours. It provides specifications for maximum ratings and typical electrical characteristics.

Uploaded by

Jesus Audiel
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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NTE109

Fast Switching General Purpose Diode


DO−7 Glass Package
Description:
The NTE109 is a fast switching general purpose diode in a DO−7 glass package optimized for radio
frequency response. This device can be used in many AM, FM, and TV−IF applications, replacing
point contact devices.
Applications:
 AM/FM Detectors
 Radio Detectors
 FM Discriminators
 TV Auto Detectors
 RF Input Probes
 TV Video Detectors
Features:
 Lower Leakage Current
 Flat Junction Capacitance
 High Mechanical Strength
 At Least 1 Million Hours MTBF
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Peak Inverse Voltage, PIV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Forward Surge Current (1 sec), IFSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Average Rectified Forward Current, IO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40mA
Peak Operating Current, IOS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 325mA
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +90C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +90C
Electrical Characteristics: (TA = +25C unless otherwise specified)
Maximum Forward Voltage Drop (IF = 200mA), VF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0V
Minimum Breakdown Voltage (IR = 1.0mA), PIV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Maximum Reverse Leakage (VR = 50V), IR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A
Typical Junction Capacitance (VR = 1V, f = 1MHz), CJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8pF

1.000 .300
(25.4) (7.63)
Min Typ

.022 (.509) Dia Max .107 (2.72) Dia Max

Color Band Denotes Cathode

Rev. 4−20

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