2N4410 NPN Silicon Transistor Description

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2N4410

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NPN SILICON TRANSISTOR DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N4410 is a small
signal NPN silicon transistor, manufactured by the
epitaxial planar process, designed for general purpose
amplifier applications.

MARKING: FULL PART NUMBER

TO-92 CASE

MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS


Collector-Base Voltage VCBO 120 V
Collector-Emitter Voltage VCEO 80 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 250 mA
Power Dissipation PD 625 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 200 °C/W
Thermal Resistance ΘJC 83.3 °C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)


SYMBOL TEST CONDITIONS MIN MAX UNITS
ICBO VCB=100V 10 nA
ICBO VCB=100V, TA=100°C 1.0 μA
IEBO VEB=4.0V 100 nA
BVCBO IC=10μA 120 V
BVCEX VBE=5.0V, IC=500μA, RBE=8.2kΩ 120 V
BVCEO IC=1.0mA 80 V
BVEBO IE=10μA 5.0 V
VCE(SAT) IC=1.0mA, IB=100μA 200 mV
VBE(SAT) IC=1.0mA, IB=100μA 800 mV
VBE(ON) VCE=5.0V, IC=1.0mA 800 mV
hFE VCE=1.0V, IC=1.0mA 60
hFE VCE=1.0V, IC=10mA 60 400
fT VCE=10V, IC=10mA, f=20MHz 60 300 MHz
Cob VCB=10V, IE=0, f=1.0MHz 12 pF
Cib VEB=0.5V, IC=0, f=1.0MHz 50 pF

R0 (18-October 2010)
2N4410

NPN SILICON TRANSISTOR

TO-92 CASE - MECHANICAL OUTLINE

LEAD CODE:
1) Emitter
2) Base
3) Collector

MARKING:
FULL PART NUMBER

R0 (18-October 2010)
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REQUESTING PRODUCT PLATING


1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
ordering (example: 2N2222A TIN/LEAD).
2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number
when ordering (example: 2N2222A PBFREE).

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